JP2000208498A5 - - Google Patents
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- JP2000208498A5 JP2000208498A5 JP1999320627A JP32062799A JP2000208498A5 JP 2000208498 A5 JP2000208498 A5 JP 2000208498A5 JP 1999320627 A JP1999320627 A JP 1999320627A JP 32062799 A JP32062799 A JP 32062799A JP 2000208498 A5 JP2000208498 A5 JP 2000208498A5
- Authority
- JP
- Japan
- Prior art keywords
- predetermined temperature
- surface treatment
- temperature
- gas
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 238000004381 surface treatment Methods 0.000 description 12
- 241000894007 species Species 0.000 description 6
- 210000002381 Plasma Anatomy 0.000 description 4
- 230000003213 activating Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
Description
【特許請求の範囲】
【請求項１】
処理容器内に、その表面上に酸化物を有する被処理体を搬入する工程と、
前記処理容器内を真空排気する工程と、
ＮとＨを含むガスをプラズマ発生部に導入し、及び該ガスを活性化することにより、第１の活性ガス種を形成する工程と、
前記被処理体に向かってフローするガスの流れに関してＮＦ3ガスを前記プラズマ発生部の下流の位置において添加することにより、該ＮＦ3ガスを活性化することにより第２の活性ガス種を形成する工程と、
前記被処理体を第１の所定の温度以下に温度制御する工程と、
第２の活性ガス種を前記被処理体の表面上の前記酸化物と反応させることにより、前記酸化物を変質させて反応膜を形成する工程と、
からなることを特徴とする表面処理方法。
【請求項２】
前記被処理体を前記第１の所定の温度よりも高い第２の所定の温度に加熱することにより、前記反応膜を昇華させる工程と、
を、さらに具備することを特徴とする請求項１に記載の表面処理方法。
【請求項３】
前記第１の所定の温度が、常温以下であることを特徴とする請求項１に記載の表面処理方法。
【請求項４】
前記第１の所定の温度が、２０℃乃至−２０℃の範囲であることを特徴とする請求項１に記載の表面処理方法。
【請求項５】
前記第１の所定の温度が、１０℃乃至−２０℃の範囲であることを特徴とする請求項１に記載の表面処理方法。
【請求項６】
前記第２の所定の温度が、１００℃以上の温度であることを特徴とする請求項２に記載の表面処理方法。
【請求項７】
処理容器内を真空排気する真空ポンプと、
ＮとＨを含むガスを活性化することにより第１の活性ガス種を形成するプラズマ発生部と、
その表面上に酸化物を有する被処理体に向かってフローするガスの流れに関してＮＦ 3 ガスを前記プラズマ発生部の下流の位置において添加するＮＦ 3 ガス供給部と、
前記被処理体を第１の所定の温度以下に温度制御する温度制御部と、
を具備し、
前記第１の活性ガス種に添加されたことにより前記ＮＦ 3 ガスが活性化することにより形成された第２の活性ガス種を前記被処理体の表面上の前記酸化物と反応させることにより、前記酸化物を変質させて反応膜を形成する、
ことを特徴とする表面処理装置。
【請求項８】
前記被処理体を前記第１の所定の温度よりも高い第２の所定の温度に加熱することにより、前記反応膜を昇華させる加熱手段と、
を、さらに具備することを特徴とする請求項７に記載の表面処理装置。
【請求項９】
前記第１の所定の温度が、常温以下であることを特徴とする請求項７に記載の表面処理装置。
【請求項１０】
前記第１の所定の温度が、２０℃乃至−２０℃の範囲であることを特徴とする請求項７に記載の表面処理装置。
【請求項１１】
前記第１の所定の温度が、１０℃乃至−２０℃の範囲であることを特徴とする請求項７に記載の表面処理装置。
【請求項１２】
前記第２の所定の温度が、１００℃以上の温度であることを特徴とする請求項８に記載の表面処理装置。
[Claims]
[Claim 1]
The process of carrying the object to be treated having an oxide on its surface into the processing container,
The process of evacuating the inside of the processing container and
The gas containing N and H was introduced into the plasma generating portion, and by activating the gas, forming a first active gas species,
By adding at a position downstream of the object to be processed said plasma generating portion NF 3 gas with respect to the flow of the flow to the gas towards, forming a second active gas species by activating the NF 3 gas Process and
A step of controlling the temperature of the object to be processed to a temperature equal to or lower than the first predetermined temperature, and
By reaction with the oxide on the surface of the workpiece a second active gas species, a process that to form a reaction layer by alteration of the oxide,
A surface treatment method characterized by consisting of.
2.
A step of sublimating the reaction membrane by heating the object to be treated to a second predetermined temperature higher than the first predetermined temperature.
The surface treatment method according to claim 1, further comprising.
3.
The surface treatment method according to claim 1, wherein the first predetermined temperature is room temperature or lower.
4.
The surface treatment method according to claim 1, wherein the first predetermined temperature is in the range of 20 ° C. to −20 ° C.
5.
The surface treatment method according to claim 1, wherein the first predetermined temperature is in the range of 10 ° C. to −20 ° C.
6.
The surface treatment method according to claim 2, wherein the second predetermined temperature is a temperature of 100 ° C. or higher.
7.
A vacuum pump that evacuates the inside of the processing container and
A plasma generating part that forms a first active gas species by activating a gas containing N and H,
And NF 3 gas supply section for adding the NF 3 gas at a location downstream of the plasma generating portion with respect to the flow of gas flow toward the object to be processed with an oxide on its surface,
A temperature control unit that controls the temperature of the object to be processed to a temperature equal to or lower than the first predetermined temperature,
Equipped with
By reacting the second active gas species formed by activating the NF 3 gas by being added to the first active gas species with the oxide on the surface of the object to be treated. The oxide is altered to form a reaction film.
A surface treatment device characterized by the fact that.
8.
A heating means for sublimating the reaction membrane by heating the object to be treated to a second predetermined temperature higher than the first predetermined temperature.
The surface treatment apparatus according to claim 7, further comprising.
9.
The surface treatment apparatus according to claim 7 , wherein the first predetermined temperature is room temperature or lower.
10.
The surface treatment apparatus according to claim 7 , wherein the first predetermined temperature is in the range of 20 ° C. to −20 ° C.
11.
The surface treatment apparatus according to claim 7 , wherein the first predetermined temperature is in the range of 10 ° C. to −20 ° C.
12.
The surface treatment apparatus according to claim 8, wherein the second predetermined temperature is a temperature of 100 ° C. or higher.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32062799A JP4124543B2 (en) | 1998-11-11 | 1999-11-11 | Surface treatment method and apparatus |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32047898 | 1998-11-11 | ||
| JP10-320478 | 1998-11-11 | ||
| JP32062799A JP4124543B2 (en) | 1998-11-11 | 1999-11-11 | Surface treatment method and apparatus |
Related Child Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007249135A Division JP4124800B2 (en) | 1998-11-11 | 2007-09-26 | Surface treatment method and apparatus |
| JP2008013588A Division JP4732469B2 (en) | 1998-11-11 | 2008-01-24 | Surface treatment method and apparatus |
| JP2008013592A Division JP4612063B2 (en) | 1998-11-11 | 2008-01-24 | Surface treatment method and apparatus |
| JP2008070713A Division JP4732475B2 (en) | 1998-11-11 | 2008-03-19 | Surface treatment method and apparatus |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000208498A JP2000208498A (en) | 2000-07-28 |
| JP2000208498A5 true JP2000208498A5 (en) | 2007-11-15 |
| JP4124543B2 JP4124543B2 (en) | 2008-07-23 |
Family
ID=26570102
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP32062799A Expired - Fee Related JP4124543B2 (en) | 1998-11-11 | 1999-11-11 | Surface treatment method and apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4124543B2 (en) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW448499B (en) * | 1998-11-11 | 2001-08-01 | Tokyo Electron Ltd | Surface treatment method and surface treatment apparatus |
| JP4057198B2 (en) | 1999-08-13 | 2008-03-05 | 東京エレクトロン株式会社 | Processing apparatus and processing method |
| KR100338768B1 (en) * | 1999-10-25 | 2002-05-30 | 윤종용 | Method for removing oxide layer and semiconductor manufacture apparatus for removing oxide layer |
| KR100316721B1 (en) * | 2000-01-29 | 2001-12-12 | 윤종용 | Method of manufacturing semiconductor device having a silicide layer |
| JP4910231B2 (en) * | 2000-10-25 | 2012-04-04 | ソニー株式会社 | Manufacturing method of semiconductor device |
| JP4644943B2 (en) * | 2001-01-23 | 2011-03-09 | 東京エレクトロン株式会社 | Processing equipment |
| US7780793B2 (en) | 2004-02-26 | 2010-08-24 | Applied Materials, Inc. | Passivation layer formation by plasma clean process to reduce native oxide growth |
| US20050230350A1 (en) | 2004-02-26 | 2005-10-20 | Applied Materials, Inc. | In-situ dry clean chamber for front end of line fabrication |
| JP4806241B2 (en) * | 2005-09-14 | 2011-11-02 | 東京エレクトロン株式会社 | Substrate processing apparatus and substrate lift apparatus |
| JP4976002B2 (en) * | 2005-11-08 | 2012-07-18 | 東京エレクトロン株式会社 | Substrate processing apparatus, substrate processing method, and recording medium |
| JP2007214538A (en) * | 2006-01-11 | 2007-08-23 | Renesas Technology Corp | Semiconductor device, and method of manufacturing same |
| US7718032B2 (en) * | 2006-06-22 | 2010-05-18 | Tokyo Electron Limited | Dry non-plasma treatment system and method of using |
| US7476291B2 (en) * | 2006-09-28 | 2009-01-13 | Lam Research Corporation | High chamber temperature process and chamber design for photo-resist stripping and post-metal etch passivation |
| JP5229711B2 (en) | 2006-12-25 | 2013-07-03 | 国立大学法人名古屋大学 | Pattern forming method and semiconductor device manufacturing method |
| JP4949091B2 (en) * | 2007-03-16 | 2012-06-06 | 東京エレクトロン株式会社 | Substrate processing apparatus, substrate processing method, and recording medium |
| JP2008235918A (en) * | 2008-04-16 | 2008-10-02 | Tokyo Electron Ltd | Apparatus for treating substrate with plasma |
| US7994002B2 (en) | 2008-11-24 | 2011-08-09 | Applied Materials, Inc. | Method and apparatus for trench and via profile modification |
| JP5140608B2 (en) * | 2009-01-16 | 2013-02-06 | 株式会社アルバック | Vacuum processing apparatus and vacuum processing method |
| US9216609B2 (en) * | 2011-02-08 | 2015-12-22 | Ulvac, Inc. | Radical etching apparatus and method |
| JP6326295B2 (en) * | 2014-06-04 | 2018-05-16 | 東京エレクトロン株式会社 | Cooling processing apparatus and method of operating cooling processing apparatus |
-
1999
- 1999-11-11 JP JP32062799A patent/JP4124543B2/en not_active Expired - Fee Related
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