JP2000200928A - Surface-mounting type light emitting diode - Google Patents

Surface-mounting type light emitting diode

Info

Publication number
JP2000200928A
JP2000200928A JP37756998A JP37756998A JP2000200928A JP 2000200928 A JP2000200928 A JP 2000200928A JP 37756998 A JP37756998 A JP 37756998A JP 37756998 A JP37756998 A JP 37756998A JP 2000200928 A JP2000200928 A JP 2000200928A
Authority
JP
Japan
Prior art keywords
resin layer
light emitting
mold
resin
emitting element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP37756998A
Other languages
Japanese (ja)
Other versions
JP3332880B2 (en
Inventor
Yoshio Murano
由夫 村野
Akira Koike
晃 小池
Koichi Fukazawa
孝一 深澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Citizen Electronics Co Ltd
Original Assignee
Citizen Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Citizen Electronics Co Ltd filed Critical Citizen Electronics Co Ltd
Priority to JP37756998A priority Critical patent/JP3332880B2/en
Publication of JP2000200928A publication Critical patent/JP2000200928A/en
Application granted granted Critical
Publication of JP3332880B2 publication Critical patent/JP3332880B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Abstract

PROBLEM TO BE SOLVED: To provide a surface-mounting type light emitting diode for early achieving mass production and for mixing fluorescent agent or the like into the optimal position, and a method for manufacturing this device. SOLUTION: Fluorescent materials for increasing light quantity, in response to lights from a light emitting element 42, is mixed in a stereoscopic first resin layer 48. Aging preventing agent, such as ultraviolet-ray absorbing agent for preventing the deterioration of the first resin layer 48 and the light emitting element 42, is mixed into the second resin layer 50 covering a whole surface except the bottom face of the first resin layer. The fluorescent materials is precipitated in the surrounding of the light emitting element 42, and mixed into the optimal position. The antiaging agent absorbs ultraviolet rays for preventing the deterioration of the first resin layer 48 or the light emitting element 42 due to the ultraviolet rays.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、発光素子を樹脂モ
ールドした電子部品に関するものであり、特に、プリン
ト基板への表面実装に適した表面実装型発光ダイオード
の構造及びその製造方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electronic component in which a light emitting element is resin-molded, and more particularly to a structure of a surface mount type light emitting diode suitable for surface mounting on a printed circuit board and a method of manufacturing the same. .

【０００２】[0002]

【従来の技術】従来のこの種の発光ダイオードとして
は、特開平５−１５２６０９号公報、実公昭５４−４１
６６０号公報、実開昭６３−１０８６５５号公報及び特
開平７−９９３４５号公報に開示されているものがあ
り、それぞれ図３５乃至図３８に示すような構成からな
るものであった。2. Description of the Related Art A conventional light emitting diode of this type is disclosed in Japanese Patent Application Laid-Open No. 5-152609 and Japanese Utility Model Publication No. 54-41.
660, JP-A-63-108655 and JP-A-7-99345, each of which has a configuration as shown in FIGS. 35 to 38.

【０００３】即ち、この従来の発光ダイオードは、図３
５乃至図３７に示すもののように、一方のリードフレー
ム２又は端子ピン６にダイボンドされ、他方のリードフ
レーム４又は端子ピン８にワイヤーボンドされた発光素
子１０を、蛍光剤を入れた樹脂１２や老化防止剤を入れ
た樹脂１４で封止したものであった。また、図３８に示
すもののように、リードフレーム２の端部に設けられた
カップ２ａ内に発光素子１０をダイボンドし、そのカッ
プ２ａ内にて発光素子１０を蛍光剤等が入った樹脂１６
で封止し、更に蛍光剤等を混入していない樹脂１８でリ
ードフレーム２、４と共に一体化したものもあった。[0003] That is, this conventional light emitting diode is shown in FIG.
As shown in FIGS. 5 to 37, the light emitting element 10 die-bonded to one lead frame 2 or terminal pin 6 and wire-bonded to the other lead frame 4 or terminal pin 8 is made of a resin 12 containing a fluorescent agent. It was sealed with a resin 14 containing an anti-aging agent. Further, as shown in FIG. 38, the light emitting element 10 is die-bonded in a cup 2a provided at the end of the lead frame 2, and the light emitting element 10 is placed in a resin 16 containing a fluorescent agent or the like in the cup 2a.
In some cases, resin 18 containing no fluorescent agent or the like is integrated with lead frames 2 and 4.

【０００４】図３５乃至図３７に示す発光ダイオードは
次のようにして製造される。図３９に示すように、対を
なすリードフレーム２、４が継ぎ部２０を介して多数連
設されたものを用意し、はじめに、このような連設され
たリードフレーム２、４にそれぞれ発光素子１０がダイ
ボンド及びワイヤーボンドされて電気的導通が図られ
る。次に、図３９に示すように、複数の成形部２２ａが
設けられて多数個取りが可能な金型２２の成形部２２ａ
内に、リードフレーム２、４の先端が位置するようにリ
ードフレーム２、４を固定し、更に、金型２４をセット
した後、金型２２内に圧力をかけ成形部２２ａ内に樹脂
を充填してインサート成形を行う。その後、樹脂を冷却
硬化させ、継ぎ部２０を切断してリードフレーム２、４
を切り離し、完成させる。The light emitting diode shown in FIGS. 35 to 37 is manufactured as follows. As shown in FIG. 39, a plurality of pairs of lead frames 2 and 4 are provided in series via a joint portion 20. First, the light emitting elements are respectively provided on the connected lead frames 2 and 4. 10 is die-bonded and wire-bonded to achieve electrical continuity. Next, as shown in FIG. 39, a plurality of molding parts 22a are provided, and the molding parts 22a
After fixing the lead frames 2 and 4 so that the tips of the lead frames 2 and 4 are located therein and further setting the mold 24, pressure is applied to the mold 22 and the resin is filled into the molding portion 22a. And perform insert molding. After that, the resin is cooled and hardened, and the joint portion 20 is cut to remove the lead frames 2 and 4.
Cut off and complete.

【０００５】上記インサート成形に使用される樹脂は、
図４０及び図４１に示すような、エポキシ樹脂に蛍光剤
あるいは老化防止剤を混入したペレット２６を熱で溶解
したものを用いている。[0005] The resin used for the insert molding is
As shown in FIGS. 40 and 41, a pellet 26 in which a fluorescent agent or an anti-aging agent is mixed into an epoxy resin is melted by heat.

【０００６】一方、図３８に示す発光ダイオードも、上
述した図３５乃至図３７に示すものとほぼ同様の工程を
経て製造されるが、２種類の樹脂１６、１８を使用して
いるため、その製造工程がより煩雑なものとなってい
る。即ち、発光素子１０をダイボンド及びワイヤーボン
ドした後、蛍光剤等を混入した樹脂１６をリードフレー
ム２のカップ２ａ内に充填して硬化させる。その後、前
述したものと同様に、金型２２にリードフレーム２、４
をセットし、蛍光剤等を混入していない樹脂１８を充填
することによりインサート成形を行う。On the other hand, the light emitting diode shown in FIG. 38 is manufactured through substantially the same steps as those shown in FIGS. 35 to 37, but uses two types of resins 16 and 18, and therefore, the light emitting diode shown in FIG. The manufacturing process is more complicated. That is, after the light emitting element 10 is die-bonded and wire-bonded, the resin 16 containing a fluorescent agent or the like is filled into the cup 2a of the lead frame 2 and cured. After that, the lead frames 2, 4
Is set and insert molding is performed by filling the resin 18 into which a fluorescent agent or the like is not mixed.

【０００７】この発光ダイオードにおいて使用される樹
脂も、前述したものと同様にカップ２ａ内に充填する樹
脂はエポキシ樹脂に蛍光剤等を混入したペレット２６を
溶かしたものを使用し、全体を封止する樹脂には蛍光剤
等を混入していないエポキシ樹脂のペレットを溶かした
ものも使用している。As for the resin used in this light emitting diode, the resin to be filled in the cup 2a is a resin obtained by dissolving a pellet 26 in which a fluorescent agent or the like is mixed in an epoxy resin, as in the case of the above-mentioned one, and the whole is sealed. As the resin to be used, an epoxy resin pellet in which a fluorescent agent or the like is not mixed is used.

【０００８】[0008]

【発明が解決しようとする課題】上記図３５乃至図３７
に示す従来の発光ダイオードにおいては、図３９に示す
ように、金型２２が下で、リードフレーム２、４が上に
なるように配置されてインサート成形されている。この
ような配置において、蛍光剤や老化防止剤は、一般的な
樹脂モールド材としてのエポキシ樹脂より比重が重いた
め、エポキシ樹脂内では沈んでしまう。このため、図４
２に示すように、樹脂１２のエポキシ樹脂部分１２ａが
硬化するまでに蛍光剤等は下方に沈殿して、沈殿部分１
２ｂを形成してしまい、エポキシ樹脂部分１２ａに均一
に混入することができなかった。また、金型２２、２４
を上下逆にして、レンズ部頂点にゲートを作って成形す
る方法もあるが、レンズ部頂点にゲート残りとしてのバ
リや凹凸ができてしまい、バリ取り等の工数も必要で、
又、集光性等レンズ効果に問題が出てしまうため、この
方法でも問題が残る。Problems to be Solved by the Invention FIGS.
In the conventional light-emitting diode shown in FIG. 39, as shown in FIG. 39, the mold 22 is placed downward and the lead frames 2 and 4 are placed upward and insert-molded. In such an arrangement, the fluorescent agent and the antioxidant have a higher specific gravity than the epoxy resin as a general resin molding material, and therefore sink in the epoxy resin. For this reason, FIG.
As shown in FIG. 2, the fluorescent agent or the like precipitates downward before the epoxy resin portion 12a of the resin 12 is cured, and the precipitated portion 1
2b was formed and could not be uniformly mixed into the epoxy resin portion 12a. Also, the dies 22, 24
There is also a method of making a gate at the top of the lens part by turning it upside down and molding, but burrs and unevenness as a gate remaining at the top of the lens part are created, and man-hours such as deburring are required,
In addition, since there is a problem in the lens effect such as the light collecting property, the problem remains in this method.

【０００９】このように均一に蛍光剤等を混入すること
ができないと、使用状態を示す図４３からも明らかなよ
うに、その沈殿部分１２ｂにより輝度のムラやバラツキ
等が発生し、発光変換効率が悪くなるという課題が生じ
るものであった。If the fluorescent agent or the like cannot be mixed uniformly as described above, as shown in FIG. 43 showing the state of use, the precipitated portion 12b causes unevenness or variation in luminance, and the luminous conversion efficiency. However, there is a problem that the quality is worsened.

【００１０】特に、蛍光剤を樹脂に混入する場合、均一
に発光し且つ輝度を高めるため、発光素子の周辺に蛍光
剤が位置することが最も理想的な状態であり、これに次
いで樹脂内に均一に分布することが好ましい状態と言え
る。この観点からすれば、図４３に示す発光ダイオード
は、その蛍光剤等が発光素子１０から最も離れた樹脂１
２の先端部分に位置しており、しかもその先端部分に集
まって沈殿していて樹脂１２内に均一に分布もしていな
いため、最も悪い状態となっていた。In particular, when a fluorescent agent is mixed into a resin, it is most ideal that the fluorescent agent is located around the light emitting element in order to uniformly emit light and increase luminance. It can be said that uniform distribution is preferable. From this point of view, the light emitting diode shown in FIG.
2 was the worst condition because it was located at the front end portion, and was collected and settled at the front end portion and was not evenly distributed in the resin 12.

【００１１】また、図３８に示す発光ダイオードにおい
ては、蛍光剤を混入した樹脂をリードフレーム２のカッ
プ２ａ内に充填して硬化した後に、金型２２に入れてイ
ンサート成形しているため、前述したような図３５乃至
図３７に示す発光ダイオードのように蛍光剤等が発光素
子１０から離れた所に沈殿することがないものとなって
いる。しかしながら、この発光ダイオードにおいては、
樹脂１６をカップ２ａ内にて充填・硬化させ、その後、
金型２２（図３９）にセットして樹脂１８を充填・硬化
させるという、全く異なる手法で２つの樹脂をそれぞれ
充填・硬化させることが必要であったため、図３５乃至
図３７のものに比べて製造にかかる時間と手間が大幅に
増加するという課題があった。また、このような生産性
の悪さにより、コストアップをまねくという課題もあっ
た。In the light emitting diode shown in FIG. 38, a resin mixed with a fluorescent agent is filled in the cup 2a of the lead frame 2, cured, and then put into the mold 22 for insert molding. As in the light emitting diodes shown in FIGS. 35 to 37, the fluorescent agent and the like do not settle away from the light emitting element 10. However, in this light emitting diode,
The resin 16 is filled and cured in the cup 2a.
Since it is necessary to fill and cure the two resins by completely different methods of setting the resin 18 in the mold 22 (FIG. 39) and filling and curing the resin 18, the method is different from that of FIGS. 35 to 37. There has been a problem that the time and labor required for manufacturing are significantly increased. In addition, there is also a problem that the cost is increased due to such poor productivity.

【００１２】更に、上記従来の発光ダイオードは、何れ
も金型を用いたインサート成形加工を要するものであっ
た。このため、モールド樹脂材としてエポキシ樹脂のペ
レット材を準備し、これを成形時に溶解して金型内に射
出することが必要であった。その際に使用するペレット
２６（図４０、図４１）は、一般に数トン単位のロット
で製造・販売されている汎用性の高いものと異なり、蛍
光剤等を混入した特殊なものであり、しかも１度に数キ
ログラム単位でしか必要とされないものであるためコス
トが高くなり、材料費の低減を図ることが困難であっ
た。Further, all of the above-mentioned conventional light-emitting diodes require insert molding using a mold. For this reason, it was necessary to prepare an epoxy resin pellet material as a mold resin material, dissolve this at the time of molding, and inject it into a mold. The pellets 26 (FIGS. 40 and 41) used at that time are different from general versatile ones manufactured and sold in lots of several tons, and are special ones mixed with a fluorescent agent and the like. Since it is required only in units of several kilograms at a time, the cost is high, and it has been difficult to reduce the material cost.

【００１３】更にまた、金型２２（図３９）を用いたイ
ンサート成形では、その成形部２２ａに樹脂を圧力をか
けて送り込む関係上、１度に多数の発光ダイオードをモ
ールドする多数個取りをしたとしても、せいぜい数十個
単位でしか成形することができず、量産性の向上が望め
ないという課題があった。In addition, in the insert molding using the mold 22 (FIG. 39), a large number of light emitting diodes are molded at one time due to the fact that the resin is fed to the molded portion 22a under pressure. However, there is a problem that molding can be performed at most only in units of several tens, and improvement in mass productivity cannot be expected.

【００１４】また、従来の発光ダイオードにおいては、
リードフレーム材を金型で所定のリードフレームの形状
に形成し、前述したように発光素子を取り付けてから金
型にセットして樹脂で封止した後、リードフレームの継
ぎ部２０（図３９）を切除することが必要であった。こ
のため、リードフレーム形成用の金型、インサート成形
用の金型、リードフレームの継ぎ部切断用装置、成形機
等が必要であり、それらの機器に直接かかる費用とそれ
らのメンテナンス等の間接的にかかる費用が極めて多く
なり、このような設備費の上昇がコストアップをまねく
という課題もあった。In a conventional light emitting diode,
The lead frame material is formed in a predetermined lead frame shape using a mold, and after attaching the light emitting element as described above, the mold is set in the mold and sealed with resin, and then the joint portion 20 of the lead frame (FIG. 39) Needed to be removed. For this reason, a mold for forming a lead frame, a mold for insert molding, a device for cutting a joint portion of a lead frame, a molding machine, and the like are required. In addition, there has been a problem that the cost of such equipment becomes extremely large, and such an increase in equipment cost leads to an increase in cost.

【００１５】更に、従来の発光ダイオードにおいては、
リード端子、即ちリードフレームの端部にて回路基板と
の電気的接続を図ることが必要であったため、図４３に
示すように、回路基板２８に穴を形成してそこにリード
フレーム２、４を差し込み、回路基板２８上の導電パタ
ーン３０に半田付けしていた。このように、回路基板２
８に穴が必要であったり、その穴にリードフレームを差
し込む作業が必要であったため、作業性が著しく悪いと
いう課題があった。特に、衝撃や落下、取扱の不注意に
より、リードフレームが曲がってしまうと回路基板の穴
への挿入が困難になり、自動マウントができず、手作業
で対応することが必要であった。Further, in a conventional light emitting diode,
Since it was necessary to establish electrical connection with the circuit board at the lead terminals, that is, at the ends of the lead frame, as shown in FIG. 43, holes were formed in the circuit board 28 and the lead frames 2, 4 were formed there. And soldered to the conductive pattern 30 on the circuit board 28. Thus, the circuit board 2
8 requires a hole, or requires a work of inserting a lead frame into the hole, and thus has a problem that workability is extremely poor. In particular, if the lead frame is bent due to a shock, a drop, or careless handling, it becomes difficult to insert the lead frame into the hole of the circuit board, and automatic mounting cannot be performed.

【００１６】本発明は、上記従来技術の課題に鑑みなさ
れたもので、簡単に且つ大量な生産が可能で、蛍光剤等
を最適位置に混入することが可能な表面実装型発光ダイ
オード及びその製造方法を提供するものである。SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems of the prior art, and can be easily and mass-produced, and can be mixed with a fluorescent agent or the like at an optimum position. It provides a method.

【００１７】[0017]

【課題を解決するための手段】本発明の表面実装型発光
ダイオードは、絶縁基板と、該絶縁基板の表面に形成さ
れた電極パターンと、該電極パターンに接続された発光
素子と、該発光素子を覆い、該発光素子が発する光の光
量を増す立体状の第１の樹脂層と、該第１の樹脂層の全
表面を覆い、該第１の樹脂層及び前記発光素子の劣化を
防止する第２の樹脂層と、からなるものである。According to the present invention, there is provided a surface mount type light emitting diode comprising: an insulating substrate; an electrode pattern formed on a surface of the insulating substrate; a light emitting element connected to the electrode pattern; And a three-dimensional first resin layer that increases the amount of light emitted by the light emitting element, and covers the entire surface of the first resin layer to prevent deterioration of the first resin layer and the light emitting element. And a second resin layer.

【００１８】上記表面実装型発光ダイオードにおける前
記第１の樹脂層には波長変換材料が混入されたものとな
っている。また、前記波長変換材料は、蛍光染料及び蛍
光顔料の一方又は両方からなる蛍光物質となっている。The first resin layer in the surface-mount type light emitting diode has a wavelength conversion material mixed therein. Further, the wavelength conversion material is a fluorescent substance composed of one or both of a fluorescent dye and a fluorescent pigment.

【００１９】また、上記表面実装型発光ダイオードにお
ける前記第１の樹脂層には拡散剤及び着色剤の一方又は
両方が混入されている。The first resin layer in the surface mount type light emitting diode contains one or both of a diffusing agent and a coloring agent.

【００２０】上記表面実装型発光ダイオードにおける前
記第２の樹脂層には老化防止剤が混入されたものとなっ
ている。また、前記老化防止剤は紫外線吸収剤からなる
ものである。The anti-aging agent is mixed in the second resin layer in the above surface mount type light emitting diode. Further, the anti-aging agent comprises an ultraviolet absorber.

【００２１】上記表面実装型発光ダイオードにおける前
記発光素子は窒化ガリウム系化合物半導体からなるもの
である。The light emitting element in the surface mount type light emitting diode is made of a gallium nitride compound semiconductor.

【００２２】また、上記表面実装型発光ダイオードにお
ける前記発光素子はシリコンカーバイド系化合物半導体
からなるものでもある。Further, the light emitting element in the surface mount type light emitting diode is made of a silicon carbide compound semiconductor.

【００２３】一方、本発明の表面実装型発光ダイオード
の製造方法は、複数の電極パターンと複数のスルーホー
ル電極が形成された大型絶縁基板の前記スルーホール電
極をフィルムで塞ぐ工程と、前記電極パターン上に発光
素子をダイボンドする工程と、前記発光素子を前記電極
パターンにワイヤーボンドする工程と、前記大型絶縁基
板上に、前記複数の電極パターンを全て囲う枠状の金型
を固定し、該金型内に第１の樹脂を注入して前記電極パ
ターン及び前記発光素子を覆う工程と、前記第１の樹脂
を硬化させる工程と、前記金型を取り外し、硬化後の前
記第１の樹脂を基板上面までして該第１の樹脂が１チッ
プの表面実装型発光ダイオード毎に対応するように個々
の周囲に溝部を形成し、前記発光素子が発する光の光量
を増す立体状の第１の樹脂層を形成する工程と、前記大
型絶縁基板上に前記金型を固定し、該金型内に第２の樹
脂を注入して前記第１の樹脂層の全表面を覆い、該第１
の樹脂層及び前記発光素子の劣化を防止する第２の樹脂
層を形成する工程と、前記第２の樹脂層を硬化させる工
程と、前記金型を取り外し、前記第２の樹脂層と共に前
記大型絶縁基板を切断して単体のチップ部品にする工程
と、からなる。On the other hand, the method of manufacturing a surface-mounted light-emitting diode according to the present invention comprises a step of covering the through-hole electrode of a large insulating substrate having a plurality of electrode patterns and a plurality of through-hole electrodes with a film; A step of die-bonding the light emitting element to the above, a step of wire bonding the light emitting element to the electrode pattern, and fixing a frame-shaped mold surrounding all of the plurality of electrode patterns on the large-sized insulating substrate; A step of injecting a first resin into a mold to cover the electrode pattern and the light emitting element, a step of curing the first resin, a step of removing the mold, and applying the cured first resin to a substrate. Grooves are formed around each surface so that the first resin corresponds to each surface-mounted light-emitting diode of one chip up to the upper surface, and a three-dimensional shape is formed to increase the amount of light emitted by the light-emitting element. Of forming a resin layer, the mold is fixed on the large insulating substrate, covering the entire surface of the first resin layer by injecting a second resin into the mold, the first
Forming a second resin layer for preventing the deterioration of the resin layer and the light emitting element; curing the second resin layer; removing the mold; Cutting the insulating substrate into a single chip component.

【００２４】また、本発明の表面実装型発光ダイオード
の製造方法は、複数の電極パターンと複数のスルーホー
ル電極が形成された大型絶縁基板の前記電極パターン上
に発光素子をダイボンドする工程と、前記発光素子を前
記電極パターンにワイヤーボンドする工程と、前記大型
絶縁基板上に、１チップの表面実装型発光ダイオードに
対応する前記電極パターンをそれぞれ囲う複数の窓部を
有する第１の金型を固定し、該第１の金型の窓部内に第
１の樹脂を注入して前記電極パターン及び前記発光素子
を覆い、前記発光素子が発する光の光量を増す立体状の
第１の樹脂層を形成する工程と、前記第１の樹脂層を硬
化させる工程と、前記第１の金型を取り外し、前記大型
絶縁基板上に、前記第１の樹脂層との間に一定の間隔を
保ちながら前記第１の樹脂層をそれぞれ囲う複数の窓部
を有する第２の金型を固定し、該第２の金型の窓部内に
第２の樹脂を注入して前記第１の樹脂層の全表面を覆
い、該第１の樹脂層及び前記発光素子の劣化を防止する
第２の樹脂層を形成する工程と、前記第２の樹脂層を硬
化させる工程と、前記第２の金型を取り外し、前記大型
絶縁基板を切断して単体のチップ部品にする工程と、か
らなるものでもある。The method of manufacturing a surface-mounted light-emitting diode according to the present invention includes a step of die-bonding a light-emitting element on the electrode pattern of a large-sized insulating substrate having a plurality of electrode patterns and a plurality of through-hole electrodes formed thereon; Wire bonding a light emitting element to the electrode pattern, and fixing a first mold having a plurality of windows respectively surrounding the electrode pattern corresponding to one chip surface mount type light emitting diode on the large insulating substrate. Then, a first resin is injected into the window of the first mold to cover the electrode pattern and the light emitting element, thereby forming a three-dimensional first resin layer that increases the amount of light emitted by the light emitting element. Performing the step of curing the first resin layer, removing the first mold, and forming the first resin layer on the large-sized insulating substrate while maintaining a constant space between the first resin layer and the first resin layer. A second mold having a plurality of windows surrounding each of the resin layers is fixed, and a second resin is injected into the windows of the second mold to cover the entire surface of the first resin layer. Forming a first resin layer and a second resin layer for preventing the light emitting element from deteriorating; curing the second resin layer; removing the second mold; Cutting the insulating substrate into a single chip component.

【００２５】更に、本発明の表面実装型発光ダイオード
の製造方法は、複数の電極パターンと一定の方向にそれ
ぞれ平行に配設された複数の長穴スルーホール電極が形
成された大型絶縁基板の前記電極パターン上に発光素子
をダイボンドする工程と、前記発光素子を前記電極パタ
ーンにワイヤーボンドする工程と、前記大型絶縁基板上
に、前記長穴スルーホール電極をそれぞれ塞ぐ複数の棧
部と該棧部の間に形成され前記電極パターンを一群ずつ
それぞれ囲う複数の長窓部を有する第１の金型を固定
し、該第１の金型の長窓部内に第１の樹脂を注入して前
記電極パターン及び前記発光素子を覆う工程と、前記第
１の樹脂を硬化させる工程と、前記第１の金型を取り外
し、硬化後の前記第１の樹脂を基板上面まで切削して該
第１の樹脂が１チップの表面実装型発光ダイオード毎に
対応するように個々にするための溝部を形成し、前記発
光素子が発する光の光量を増す立体状の第１の樹脂層を
形成する工程と、前記大型絶縁基板上に、前記長穴スル
ーホール電極をそれぞれ塞ぐ複数の棧部と該棧部の間に
形成され前記第１の樹脂層との間に一定の間隔を保ちな
がら前記第１の樹脂層を一群ずつそれぞれ囲う複数の長
窓部を有する第２の金型を固定し、該第２の金型内に第
２の樹脂を注入して前記第１の樹脂層の全表面を覆い、
該第１の樹脂層及び前記発光素子の劣化を防止する第２
の樹脂層を形成する工程と、前記第２の樹脂層を硬化さ
せる工程と、前記第２の金型を取り外し、前記第２の樹
脂層と共に前記大型絶縁基板を切断して単体のチップ部
品にする工程と、からなるものでもある。Further, the method of manufacturing a surface-mounted light emitting diode according to the present invention is a method of manufacturing a large-sized insulating substrate on which a plurality of electrode patterns and a plurality of elongated through-hole electrodes arranged in parallel in a predetermined direction are formed. A step of die-bonding the light-emitting element on the electrode pattern; a step of wire-bonding the light-emitting element to the electrode pattern; and a plurality of ridges and the ridges on the large-sized insulating substrate, each closing the elongated through-hole electrode. A first mold having a plurality of long windows formed between the electrodes and enclosing the electrode patterns in groups is fixed, and a first resin is injected into the long windows of the first mold to form the electrode. A step of covering the pattern and the light emitting element, a step of curing the first resin, a step of removing the first mold, and cutting the cured first resin to an upper surface of a substrate; Is one chip Forming a groove to individually correspond to each surface-mounted light emitting diode, and forming a three-dimensional first resin layer for increasing the amount of light emitted by the light emitting element; A plurality of the first resin layers are formed in a group while maintaining a constant interval between the plurality of ridges respectively closing the elongated hole through-hole electrodes and the first resin layer formed between the ridges. Fixing a second mold having a plurality of long windows surrounding each other, injecting a second resin into the second mold to cover the entire surface of the first resin layer;
A first resin layer and a second resin layer for preventing deterioration of the light emitting element.
Forming the resin layer, curing the second resin layer, removing the second mold, cutting the large insulating substrate together with the second resin layer into a single chip component And the step of performing

【００２６】更にまた、本発明の表面実装型発光ダイオ
ードの製造方法は、複数の電極パターンと一定の方向に
それぞれ平行に配設された複数の長穴スルーホール電極
が形成された大型絶縁基板の前記電極パターン上に発光
素子をダイボンドする工程と、前記発光素子を前記電極
パターンにワイヤーボンドする工程と、前記大型絶縁基
板上に、１チップの表面実装型発光ダイオードに対応す
る前記電極パターンをそれぞれ囲う複数の窓部を有する
金型を固定し、該金型の窓部内に第１の樹脂を注入して
前記電極パターン及び前記発光素子を覆い、該発光素子
が発する光の光量を増す立体状の第１の樹脂層を形成す
る工程と、前記第１の樹脂層を硬化させる工程と、前記
第１の金型を取り外し、前記大型絶縁基板上に、前記第
１の樹脂層との間に一定の間隔を保ちながら前記第１の
樹脂層をそれぞれ囲う複数の窓部を有する第２の金型を
固定し、該第２の金型の窓部内に第２の樹脂を注入して
前記第１の樹脂層の全表面を覆い、該第１の樹脂層及び
前記発光素子の劣化を防止する第２の樹脂層を形成する
工程と、前記第２の樹脂層を硬化させる工程と、前記金
型を取り外し、前記大型絶縁基板を切断して単体のチッ
プ部品にする工程と、からなるものでもある。Still further, the method of manufacturing a surface-mounted light emitting diode according to the present invention is directed to a method for manufacturing a large-sized insulating substrate having a plurality of electrode patterns and a plurality of elongated through-hole electrodes disposed in parallel with each other in a predetermined direction. A step of die-bonding a light-emitting element on the electrode pattern, a step of wire-bonding the light-emitting element to the electrode pattern, and forming the electrode pattern corresponding to a one-chip surface-mounted light-emitting diode on the large-sized insulating substrate. A mold having a plurality of surrounding windows is fixed, a first resin is injected into the windows of the mold to cover the electrode pattern and the light emitting element, and a three-dimensional shape is formed to increase the amount of light emitted by the light emitting element. Forming the first resin layer, curing the first resin layer, removing the first mold, and forming the first resin layer between the first resin layer and the large-sized insulating substrate. A second mold having a plurality of windows surrounding each of the first resin layers is fixed while maintaining a constant interval, and a second resin is injected into the windows of the second mold to form the second mold. Forming a second resin layer covering the entire surface of the first resin layer and preventing the first resin layer and the light emitting element from deteriorating; curing the second resin layer; Removing the mold and cutting the large-sized insulating substrate into a single chip component.

【００２７】また、本発明の表面実装型発光ダイオード
の製造方法は、複数の電極パターンと一定の方向にそれ
ぞれ平行に配設された複数の長穴スルーホール電極が形
成された大型絶縁基板の前記電極パターン上に発光素子
をダイボンドする工程と、前記発光素子を前記電極パタ
ーンにワイヤーボンドする工程と、前記大型絶縁基板上
に、１チップの表面実装型発光ダイオードに対応する前
記電極パターンをそれぞれ囲う複数の窓部を有する金型
を固定し、該金型の窓部内に第１の樹脂を注入して前記
電極パターン及び前記発光素子を覆い、該発光素子が発
する光の光量を増す立体状の第１の樹脂層を形成する工
程と、前記第１の樹脂層を硬化させる工程と、前記第１
の金型を取り外し、前記大型絶縁基板上に、前記長穴ス
ルーホール電極をそれぞれ塞ぐ複数の棧部と該棧部の間
に形成され前記第１の樹脂層との間に一定の間隔を保ち
ながら前記第１の樹脂層を一群ずつそれぞれ囲う複数の
長窓部を有する第２の金型を固定し、該第２の金型内に
第２の樹脂を注入して前記第１の樹脂層の全表面を覆
い、該第１の樹脂層及び前記発光素子の劣化を防止する
第２の樹脂層を形成する工程と、前記第２の樹脂層を硬
化させる工程と、前記金型を取り外し、前記第２の樹脂
層と共に前記大型絶縁基板を切断して単体のチップ部品
にする工程と、からなるものでもある。Further, the method for manufacturing a surface-mounted light emitting diode according to the present invention is a method for manufacturing a large-sized insulating substrate on which a plurality of electrode patterns and a plurality of elongated through-hole electrodes arranged in parallel in a predetermined direction are formed. A step of die-bonding the light-emitting element on the electrode pattern, a step of wire-bonding the light-emitting element to the electrode pattern, and surrounding the electrode pattern corresponding to one chip surface-mounted light-emitting diode on the large-sized insulating substrate, respectively. A mold having a plurality of windows is fixed, a first resin is injected into the windows of the mold to cover the electrode pattern and the light emitting element, and a three-dimensional shape for increasing the amount of light emitted by the light emitting element is provided. Forming a first resin layer; curing the first resin layer;
The mold is removed, and on the large-sized insulating substrate, a constant interval is maintained between the plurality of ridges that respectively close the long-hole through-hole electrodes and the first resin layer formed between the ridges. While fixing a second mold having a plurality of long windows surrounding the first resin layer in groups, and injecting a second resin into the second mold to form the first resin layer. Forming a first resin layer and a second resin layer for preventing the light emitting element from deteriorating; curing the second resin layer; removing the mold; Cutting the large insulating substrate together with the second resin layer into a single chip component.

【００２８】また、本発明の表面実装型発光ダイオード
の製造方法は、複数の電極パターンと一定の方向にそれ
ぞれ平行に配設された複数の長穴スルーホール電極が形
成された大型絶縁基板の前記電極パターン上に発光素子
をダイボンドする工程と、前記発光素子を前記電極パタ
ーンにワイヤーボンドする工程と、前記大型絶縁基板上
に、前記長穴スルーホール電極をそれぞれ塞ぐ複数の棧
部と該棧部の間に形成され前記電極パターンを一群ずつ
それぞれ囲う複数の長窓部を有する第１の金型を固定
し、該第１の金型の長窓部内に第１の樹脂を注入して前
記電極パターン及び前記発光素子を覆う工程と、前記第
１の樹脂を硬化させる工程と、前記第１の金型を取り外
し、硬化後の前記第１の樹脂を基板上面まで切削して該
第１の樹脂が１チップの表面実装型発光ダイオード毎に
対応するように個々にするための溝部を形成し、前記発
光素子が発する光の光量を増す立体状の第１の樹脂層を
形成する工程と、前記大型絶縁基板上に、前記第１の樹
脂層との間に一定の間隔を保ちながら前記第１の樹脂層
をそれぞれ囲う複数の窓部を有する第２の金型を固定
し、該第２の金型の窓部内に第２の樹脂を注入して前記
第１の樹脂層の全表面を覆い、該第１の樹脂層及び前記
発光素子の劣化を防止する第２の樹脂層を形成する工程
と、前記第２の樹脂層を硬化させる工程と、前記金型を
取り外し、前記大型絶縁基板を切断して単体のチップ部
品にする工程と、からなるものでもある。Further, the method of manufacturing a surface-mounted light emitting diode according to the present invention is a method of manufacturing a large-sized insulating substrate having a plurality of electrode patterns and a plurality of elongated through-hole electrodes disposed in parallel with each other in a predetermined direction. A step of die-bonding the light-emitting element on the electrode pattern; a step of wire-bonding the light-emitting element to the electrode pattern; and a plurality of ridges and the ridges on the large-sized insulating substrate, each closing the elongated through-hole electrode. A first mold having a plurality of long windows formed between the electrodes and enclosing the electrode patterns in groups is fixed, and a first resin is injected into the long windows of the first mold to form the electrode. A step of covering the pattern and the light emitting element, a step of curing the first resin, a step of removing the first mold, and cutting the cured first resin to an upper surface of a substrate; Is one chip Forming a groove to individually correspond to each surface-mounted light emitting diode, and forming a three-dimensional first resin layer for increasing the amount of light emitted by the light emitting element; A second mold having a plurality of windows surrounding the first resin layer is fixed on the first mold while maintaining a constant interval between the second mold and the second mold. Injecting a second resin into the window to cover the entire surface of the first resin layer, and forming a second resin layer for preventing the first resin layer and the light emitting element from deteriorating; Curing the second resin layer; and removing the mold and cutting the large-sized insulating substrate into a single chip component.

【００２９】[0029]

【発明の実施の形態】本発明の表面実装型発光ダイオー
ドは、絶縁基板上の電極パターンに実装された発光素子
を覆う多面体、直方体、立方体、半球体等の立体状の第
１の樹脂層と、この第１の樹脂層の底面を除く全表面を
覆う第２の樹脂層を有している。第１の樹脂層は、発光
素子が発する光に反応して光量を増すものであり、蛍光
物質、拡散剤等が混入されている。また、第２の樹脂層
は、第１の樹脂層及び発光素子の劣化を防止するもので
あり、紫外線吸収剤等の老化防止剤が混入されている。DESCRIPTION OF THE PREFERRED EMBODIMENTS A surface-mounted light-emitting diode according to the present invention comprises a three-dimensional first resin layer such as a polyhedron, a rectangular parallelepiped, a cube, and a hemisphere covering a light-emitting element mounted on an electrode pattern on an insulating substrate. And a second resin layer covering the entire surface of the first resin layer except for the bottom surface. The first resin layer increases the amount of light in response to light emitted from the light emitting element, and contains a fluorescent substance, a diffusing agent, and the like. Further, the second resin layer is for preventing the first resin layer and the light emitting element from deteriorating, and contains an antioxidant such as an ultraviolet absorber.

【００３０】上記のように、絶縁基板上で発光素子を蛍
光物質、拡散剤等が混入された立体状の第１の樹脂層で
覆い、この第１の樹脂層の全表面を紫外線吸収剤等の老
化防止剤が混入された第２の樹脂層で覆っているため、
第１の樹脂層内では蛍光物質等が基板上面側へ沈殿し、
蛍光物質を発光素子の周囲に集めることができ、更に、
紫外線による第１の樹脂層や発光素子の劣化を第１の樹
脂層を包み込むように形成された第２の樹脂層で防止す
ることができ、理想的な位置に蛍光物質等を配置するこ
とができると共に樹脂や発光素子の長寿命化を図ること
もできる。As described above, the light emitting element is covered on the insulating substrate with the three-dimensional first resin layer mixed with the fluorescent substance, the diffusing agent and the like, and the entire surface of the first resin layer is covered with the ultraviolet absorbent and the like. Because it is covered with the second resin layer mixed with the anti-aging agent,
In the first resin layer, a fluorescent substance or the like precipitates on the upper surface of the substrate,
The fluorescent substance can be collected around the light emitting element,
Deterioration of the first resin layer and the light emitting element due to ultraviolet rays can be prevented by the second resin layer formed so as to surround the first resin layer, and it is possible to arrange a fluorescent substance or the like at an ideal position. It is also possible to extend the life of the resin and the light emitting element.

【００３１】また、上記表面実装型発光ダイオードの製
造方法についても、蛍光物質等の理想的な最適位置への
混入を促すと共に作業性の向上等を図ることが可能なも
のとなっている。即ち、大型絶縁基板の複数の電極パタ
ーンにそれぞれ発光素子を実装した後、その複数の電極
パターンを囲う枠状の金型を大型絶縁基板に固定する。
そして、この金型内に第１の樹脂を注入し、硬化後、ハ
ーフダイシング等により切削して１チップの表面実装型
発光ダイオード毎に対応するように分割して立体状の第
１の樹脂層を形成する。その後、金型を再び大型絶縁基
板に固定し、第２の樹脂を金型内に注入して第２の樹脂
層を形成する。このように、樹脂層を形成する際に、基
板等の表裏を逆にする必要がないため、常に表面側（樹
脂層下方）に発光素子が位置することになり、樹脂内の
蛍光物質等が下方に沈殿しても発光素子の周囲に集まっ
て理想的な最適位置への混入となる。また、上記のよう
に、一つの金型で第１及び第２の樹脂層を形成したり、
あるいはハーフダイシング等の切削工程を省略するため
にそれぞれ僅かに大きさが異なる窓部等を有する第１及
び第２の金型を用いて第１及び第２の樹脂層を形成して
いるので、それぞれ同様の工程で且つ連続して第１及び
第２の樹脂層を形成することができ、生産効率の良い製
造方法となっている。In the method of manufacturing the surface-mounted light-emitting diode, it is also possible to promote mixing of a fluorescent substance or the like into an ideal optimum position and to improve workability. That is, after mounting the light emitting elements on the plurality of electrode patterns of the large-sized insulating substrate, a frame-shaped mold surrounding the plurality of electrode patterns is fixed to the large-sized insulating substrate.
Then, the first resin is injected into the mold, and after curing, cut by half dicing or the like and divided so as to correspond to each one-chip surface mount type light emitting diode, thereby forming a three-dimensional first resin layer. To form Thereafter, the mold is again fixed to the large-sized insulating substrate, and the second resin is injected into the mold to form a second resin layer. In this way, when forming the resin layer, it is not necessary to turn the substrate and the like upside down, so that the light emitting element is always located on the front side (below the resin layer), and the fluorescent substance and the like in the resin are removed. Even if they settle down, they gather around the light-emitting element and become mixed at an ideal optimum position. Further, as described above, the first and second resin layers are formed by one mold,
Alternatively, the first and second resin layers are formed using first and second molds having windows and the like having slightly different sizes, respectively, in order to omit a cutting process such as half dicing. The first and second resin layers can be successively formed in the same steps, respectively, so that the production method has high production efficiency.

【００３２】[0032]

【実施例】図１及び図２は本発明の一実施例に係る表面
実装型発光ダイオードを示す斜視図と断面図である。図
中、３２は絶縁基板であり、その表面側には独立した電
極パターン３４、３６が形成されている。この電極パタ
ーン３４、３６は、それぞれ絶縁基板３２の端面に形成
されたスルーホール電極３８、４０を介して絶縁基板３
２の裏面側にまで回り込んで形成されている。1 and 2 are a perspective view and a sectional view showing a surface mount type light emitting diode according to an embodiment of the present invention. In the figure, reference numeral 32 denotes an insulating substrate on which independent electrode patterns 34 and 36 are formed. The electrode patterns 34 and 36 are connected to the insulating substrate 3 via through-hole electrodes 38 and 40 formed on the end surfaces of the insulating substrate 32, respectively.
2 is formed so as to extend to the back side.

【００３３】４２は窒化ガリウム系化合物半導体、シリ
コンカーバイド系化合物半導体等からなる青色光を発光
する発光素子である。この発光素子４２は、絶縁基板３
２の表面側の電極パターン３４にダイボンドされ、電極
パターン３６にワイヤーボンドされて電極パターン３
４、３６にそれぞれ電気的に接続されている。Reference numeral 42 denotes a light-emitting element which emits blue light, such as a gallium nitride-based compound semiconductor or a silicon carbide-based compound semiconductor. This light-emitting element 42 is
2 is die-bonded to the electrode pattern 34 on the surface side, and wire-bonded to the electrode pattern 36 to form the electrode pattern 3.
4 and 36, respectively.

【００３４】４４、４６は後述する第１の樹脂層を形成
する際に、樹脂がスルーホール電極３８、４０内に入ら
ないように塞ぐためのドライフィルムである。Reference numerals 44 and 46 denote dry films for closing the resin so as not to enter the through-hole electrodes 38 and 40 when forming a first resin layer described later.

【００３５】４８は発光素子４２及び電極パターン３
４、３６を覆う直方体等の立体状をなす第１の樹脂層で
ある。本実施例における第１の樹脂層４８は、絶縁基板
３２の平面形状の縦横寸法よりも僅かに小さい平面形状
の縦横寸法を有し、絶縁基板３２の端面より内側に配置
されている。この第１の樹脂層４８は、エポキシ樹脂等
の透光性を有する樹脂に発光素子４２が発する光の発光
波長を変換して他の色に変換して輝度を高める蛍光染料
及び蛍光顔料の一方又は両方からなる蛍光物質を混入し
たものからなる。また、この蛍光物質と共に、発光素子
４２からの光を拡散させる拡散剤、あるいは発光色に変
化をもたらす着色剤を混入する場合もある。Reference numeral 48 denotes the light emitting element 42 and the electrode pattern 3
The first resin layer has a three-dimensional shape such as a rectangular parallelepiped that covers the first and second resin layers. The first resin layer 48 in the present embodiment has a vertical and horizontal dimension slightly smaller than the vertical and horizontal dimensions of the planar shape of the insulating substrate 32, and is disposed inside the end face of the insulating substrate 32. The first resin layer 48 is formed of one of a fluorescent dye and a fluorescent pigment, which converts a light emission wavelength of light emitted from the light emitting element 42 into a light-transmitting resin such as an epoxy resin and converts the light into another color to increase luminance. Alternatively, it is composed of a mixture of fluorescent substances composed of both. In addition, a diffusing agent that diffuses light from the light emitting element 42 or a coloring agent that changes the emission color may be mixed with the fluorescent substance.

【００３６】５０は第１の樹脂層４８の底面を除く全表
面を覆う第２の樹脂層である。本実施例における第２の
樹脂層５０は、第１の樹脂層４８を一回り大きくした直
方体をなすもので、第１の樹脂層４８の周囲の端面及び
上表面を全て包み込んでいる。この第２の樹脂層５０
は、エポキシ樹脂等の透光性を有する樹脂に第１の樹脂
層４８及び発光素子４２の劣化の原因となる紫外線を吸
収する紫外線吸収剤等の老化防止剤を混入したものから
なる。Reference numeral 50 denotes a second resin layer that covers the entire surface of the first resin layer 48 except for the bottom surface. The second resin layer 50 in the present embodiment has a rectangular parallelepiped shape which is one size larger than the first resin layer 48, and covers the entire end surface and the upper surface around the first resin layer 48. This second resin layer 50
Is formed by mixing a translucent resin such as an epoxy resin with an antioxidant such as an ultraviolet absorber that absorbs ultraviolet light that causes deterioration of the first resin layer 48 and the light emitting element 42.

【００３７】上記構成からなる表面実装型発光ダイオー
ドにおいては、発光素子４２を覆う第１の樹脂層４８の
中に蛍光物質を混入しているため、比重の違いによる沈
殿から蛍光物質を確実に発光素子４２の周囲である最適
位置に混入することが可能となっている。In the surface-mounted light emitting diode having the above structure, since the fluorescent substance is mixed in the first resin layer 48 covering the light emitting element 42, the fluorescent substance is surely emitted from the precipitate due to the difference in specific gravity. It is possible to mix in the optimum position around the element 42.

【００３８】また、第１及び第２の樹脂４８、５０は共
にエポキシ樹脂を主成分としているため、紫外線の影響
で組成が変化し、黄色に変色して、発光素子４２からの
光の透過率が低下することがある。このような樹脂の劣
化を防ぐため、紫外線吸収剤等の老化防止剤を第２の樹
脂層５０に混入して、樹脂の劣化を防いでいる。また、
蛍光物質や発光素子４２も紫外線により劣化を早めるこ
とがあり、上記老化防止剤を第２の樹脂層５０に混入す
ることにより、それらの劣化も防止することができる。Further, since both the first and second resins 48 and 50 are mainly composed of an epoxy resin, the composition changes under the influence of ultraviolet rays, the color changes to yellow, and the transmittance of light from the light emitting element 42 changes. May decrease. In order to prevent such deterioration of the resin, an anti-aging agent such as an ultraviolet absorber is mixed into the second resin layer 50 to prevent the deterioration of the resin. Also,
The deterioration of the fluorescent substance and the light emitting element 42 may be accelerated by ultraviolet rays, and the deterioration can be prevented by mixing the antioxidant into the second resin layer 50.

【００３９】次に、上記表面実装型発光ダイオードの製
造方法に関して説明する。はじめに、図３及び図４に示
すような大型絶縁基板５２を用意する。この大型絶縁基
板５２には、その表面に複数の電極パターン５４と複数
のスルーホール電極５６が形成されており、このスルー
ホール電極５６を塞ぐようにドライフィルム５８を貼り
付ける。Next, a method of manufacturing the above surface mount type light emitting diode will be described. First, a large-sized insulating substrate 52 as shown in FIGS. 3 and 4 is prepared. A plurality of electrode patterns 54 and a plurality of through-hole electrodes 56 are formed on the surface of the large-sized insulating substrate 52, and a dry film 58 is attached so as to cover the through-hole electrodes 56.

【００４０】その後、図５及び図６に示すように、電極
パターン５４の所定位置に銀ペースト等の導電性接着剤
をダイボンドペーストとして印刷し、その上に発光素子
６０をダイボンド機で搭載する。発光素子６０の搭載
後、キュア炉にてダイボンドペーストを固め、発光素子
６０を電極パターン５４に接着固定する。Thereafter, as shown in FIGS. 5 and 6, a conductive adhesive such as silver paste is printed as a die bond paste at a predetermined position of the electrode pattern 54, and the light emitting element 60 is mounted thereon by a die bond machine. After mounting the light emitting element 60, the die bond paste is solidified in a curing furnace, and the light emitting element 60 is bonded and fixed to the electrode pattern 54.

【００４１】上記のように電極パターンの所定位置にダ
イボンドされた発光素子６０は、次に図７及び図８に示
すように、ワイヤーボンド機にて金線６１で対応する他
の電極パターン５４に接続される。The light emitting element 60 die-bonded to the predetermined position of the electrode pattern as described above is then connected to another electrode pattern 54 corresponding to the gold wire 61 by a wire bonding machine as shown in FIGS. Connected.

【００４２】その後、図９及び図１０に示すように、全
ての電極パターン５４を囲うように枠状の金型６２を大
型絶縁基板５２の外周平面上に固定する。そして、前述
したように、蛍光染料又は蛍光顔料等の蛍光物質や拡散
剤、着色剤等をエポキシ樹脂に混入した第１の樹脂６４
を金型６２内に注入する。このときに、第１の樹脂６４
は、発光素子６０及び金線６１を覆う八分目程度まで金
型６２内に注入される。尚、金型６２の高さは、少なく
とも第１の樹脂６４の高さと後の工程で注入される第２
の樹脂の高さを合わせた寸法に設定されている。このた
め、第１の樹脂６４を所定量注入しても金型６２内は一
杯に満たされず、第１の樹脂６４の上には後述する第２
の樹脂を注入するスペースが残ることになる。その後、
第１の樹脂６４をキュア工程にて硬化させる。Thereafter, as shown in FIGS. 9 and 10, a frame-shaped mold 62 is fixed on the outer peripheral plane of the large-sized insulating substrate 52 so as to surround all the electrode patterns 54. Then, as described above, the first resin 64 in which a fluorescent substance such as a fluorescent dye or a fluorescent pigment, a diffusing agent, a coloring agent, or the like is mixed in the epoxy resin.
Is injected into the mold 62. At this time, the first resin 64
Is injected into the mold 62 up to about the eighth minute covering the light emitting element 60 and the gold wire 61. The height of the mold 62 is at least the height of the first resin 64 and the height of the second resin injected in a later step.
The height is set to match the height of the resin. For this reason, even if a predetermined amount of the first resin 64 is injected, the inside of the mold 62 is not completely filled, and a second resin (described later) is placed on the first resin 64.
This leaves space for resin injection. afterwards,
The first resin 64 is cured in a curing step.

【００４３】その後、金型６２を取り外し、ダイシング
機又はスライシング機等を用いて硬化した第１の樹脂６
４のみをＸ−Ｙ方向にハーフダイシングすることにより
切削して、図１１及び図１２に示すように、１チップの
表面実装型発光ダイオード毎に対応するように個々の周
囲に溝部６４ａを形成して分割する。本実施例において
は、第１の樹脂６４を分割する場合、１チップ化した完
成状態での大きさにおける表面実装型発光ダイオードの
絶縁基板の平面形状よりも第１の樹脂６４の平面形状が
一回り小さくなるように、溝部６４ａの幅を設定してい
る。従って、このようにして第１の樹脂６４を溝部６４
ａで分割すると、設定された大きさの第１の樹脂層６６
が一定の間隔（隙間）をもって大型絶縁基板５２上に多
数形成されることになる。Thereafter, the mold 62 is removed, and the first resin 6 cured using a dicing machine or a slicing machine is used.
4 was cut by half-dicing in the X-Y direction to form grooves 64a around each chip corresponding to one chip surface-mounted light emitting diode as shown in FIGS. To split. In the present embodiment, when the first resin 64 is divided, the planar shape of the first resin 64 is smaller than the planar shape of the insulating substrate of the surface-mounted light emitting diode in the completed state in one chip. The width of the groove 64a is set so as to make the circumference smaller. Therefore, in this way, the first resin 64 is
a, the first resin layer 66 having a set size
Are formed on the large-sized insulating substrate 52 at a constant interval (gap).

【００４４】上記のように第１の樹脂層６６を形成した
後、図１３及び図１４に示すように、再び金型６２を大
型絶縁基板５２の外周平面上に固定する。このときに、
前述したように、第１の樹脂層６６は溝部６４ａにより
その周囲が削られて一回り小さくなっているため、金型
６２の内面と大型絶縁基板５２の最も外側に配列された
第１の樹脂層６６との間には、溝部６４ａの約２分の１
程度の間隔が生じることになる。このような金型６２内
の第１の樹脂層６６の上に前述した紫外線吸収剤等の老
化防止剤をエポキシ樹脂に混入した第２の樹脂６８を注
入して、金型６２内を満たす。前述したように、第１の
樹脂６４は金型６２の八分目の高さしか有していないた
め、金型６２内に第２の樹脂６８を満たすと、第２の樹
脂６８は各第１の樹脂層６６の周囲だけでなくその上方
にも被さり、各第１の樹脂層６６の全表面を覆うことに
なる。その後、キュア工程にて第２の樹脂６８を硬化さ
せて、第２の樹脂層７０（図１５）を形成する。After forming the first resin layer 66 as described above, the mold 62 is fixed on the outer peripheral plane of the large-sized insulating substrate 52 again as shown in FIGS. At this time,
As described above, since the periphery of the first resin layer 66 is shaved by the groove 64a and is slightly smaller, the first resin layer 66 arranged on the inner surface of the mold 62 and the outermost surface of the large-sized insulating substrate 52 is formed. About half of the groove 64a is provided between the
A certain degree of spacing will occur. On the first resin layer 66 in such a mold 62, a second resin 68 in which an anti-aging agent such as the above-mentioned ultraviolet absorber is mixed with an epoxy resin is injected to fill the mold 62. As described above, since the first resin 64 has only the eighth height of the mold 62, when the second resin 68 is filled in the mold 62, the second resin 68 It covers not only the periphery of the resin layer 66 but also above it, and covers the entire surface of each first resin layer 66. Thereafter, the second resin 68 is cured in a curing step to form a second resin layer 70 (FIG. 15).

【００４５】上記のように、第１及び第２の樹脂層６
６、７０を形成した後、図１５及び図１６に示すよう
に、金型６２を取り外し、ダイシング機又はスライシン
グ機でＸ−Ｙ方向に切断分割して、図１及び図２に示す
ような単体のチップ部品にする。その際に、スルーホー
ル電極５６を半分に切断した部分がチップ部品の端部と
なるように設定しているため、スルーホール電極５６が
そのまま表面実装用の電極となる。As described above, the first and second resin layers 6
After forming 6, 70, as shown in FIGS. 15 and 16, the mold 62 is removed and cut and divided in the X-Y direction by a dicing machine or a slicing machine to form a single unit as shown in FIGS. Chip components. At this time, since the portion where the through-hole electrode 56 is cut in half is set to be the end of the chip component, the through-hole electrode 56 becomes the surface mounting electrode as it is.

【００４６】図１及び図２に示す表面実装型発光ダイオ
ードを製造する場合、上記製造方法に基づいて製造すれ
ば、従来のようなリードフレーム材及びリードフレーム
を加工する金型、更に切断装置等の必要がない。一方、
インサート成形に用いる複雑な成形機や金型、ペレット
等も必要とせず、製造過程において基板の表裏を逆にす
る等の作業も全く必要がない。特に、蛍光物質等を含む
第１の樹脂６４の注入時に、発光素子６０が基板表面側
（樹脂層下方）に位置しているため、蛍光物質等が下方
に沈殿すると発光素子６０の周囲に集まることになり、
理想的な最適位置への混入状態になる。When the surface-mount type light emitting diode shown in FIGS. 1 and 2 is manufactured, if it is manufactured based on the above manufacturing method, a conventional lead frame material, a mold for processing the lead frame, a cutting device, etc. There is no need for on the other hand,
There is no need for complicated molding machines, molds, pellets, etc. used for insert molding, and there is no need for any operation such as turning the substrate upside down in the manufacturing process. In particular, since the light emitting element 60 is located on the substrate surface side (below the resin layer) when the first resin 64 containing a fluorescent substance or the like is injected, the fluorescent substance collects around the light emitting element 60 when the fluorescent substance or the like precipitates downward. That means
It is in a state of being mixed into an ideal optimum position.

【００４７】一方、上記製造方法において、図９等に示
す金型６２に代えて図１７に示す金型７２を用いること
もできる。この金型７２には、図１に示す表面実装型発
光ダイオードの１チップに対応する１チップサイズの窓
部７２ａが複数形成されている。本実施例における窓部
７２ａは、図１に示す第１の樹脂層４８のように、１チ
ップの表面実装型発光ダイオードの絶縁基板の平面形状
よりも一回り小さい第１の樹脂層６６を形成するサイズ
に設定されている。この金型７２内に第１の樹脂６４を
注入し、硬化することにより第１の樹脂層６６を形成し
た場合には、１チップ毎に分離した状態で第１の樹脂層
６６を形成することができ、ダイシング機又はスライシ
ング機等を用いて溝部６４ａを形成することにより第１
の樹脂層６６を分割形成する必要がなくなる。On the other hand, in the above manufacturing method, a mold 72 shown in FIG. 17 can be used instead of the mold 62 shown in FIG. The mold 72 has a plurality of one-chip-sized windows 72a corresponding to one chip of the surface-mounted light-emitting diode shown in FIG. As the first resin layer 48 shown in FIG. 1, the window 72 a in the present embodiment forms the first resin layer 66 which is slightly smaller than the planar shape of the insulating substrate of the one-chip surface mount type light emitting diode. Is set to the size you want. When the first resin layer 66 is formed by injecting and curing the first resin 64 into the mold 72, the first resin layer 66 is formed in a state of being separated for each chip. The first portion is formed by forming the groove 64a using a dicing machine or a slicing machine.
It is not necessary to form the resin layer 66 separately.

【００４８】また、上記のように金型７２を用いて第１
の樹脂層６６を形成した場合、図１８に示すように第１
の樹脂層６６よりも一回り大きく深い窓部７３ａが複数
形成された金型７３を用いて第２の樹脂層７０を形成す
ることが好ましい。即ち、この窓部７３ａは、大型絶縁
基板５２上に形成された第１の樹脂層６６に対応する位
置に設けられており、金型７３を大型絶縁基板５２上に
固定すると、その窓部７３ａ内にそれぞれ第１の樹脂層
６６が入ることになる。このときに、窓部７３ａの内面
と第１の樹脂層６６との間には一定の間隔が生じるよう
に設定されており、この窓部７３ａに第２の樹脂６８を
注入することにより第１の樹脂層６６はその周囲の端面
及び上表面が全て第２の樹脂６８で覆われる。Further, as described above, the first
When the resin layer 66 is formed as shown in FIG.
It is preferable to form the second resin layer 70 using a mold 73 in which a plurality of window portions 73a that are slightly larger and deeper than the resin layer 66 are formed. That is, the window portion 73a is provided at a position corresponding to the first resin layer 66 formed on the large-sized insulating substrate 52. When the mold 73 is fixed on the large-sized insulating substrate 52, the window portion 73a is formed. The first resin layer 66 enters each of them. At this time, a predetermined interval is set between the inner surface of the window 73a and the first resin layer 66, and the first resin 68 is injected into the window 73a by injecting the second resin 68. The entire end surface and the upper surface of the resin layer 66 are covered with the second resin 68.

【００４９】このように金型７２、７３を使用すると、
第１及び第２の樹脂層６６、７０を１チップごとに分離
した状態で形成することができ、その後の切断分割工程
において大型絶縁基板５２だけを切断すれば良いことに
なる。このため、第１及び第２の樹脂層６６、７０に切
断時の負荷がかからず、断線や発光素子６０の破損の発
生を防ぐことができる。また、金型７２、７３内に注入
する樹脂の量も最小限にすることができ、材料コストを
削減することも可能となる。更に、金型７２、７３のＹ
方向の棧部７２ｂ、７３ｂにてスルーホール電極５６を
塞ぐことにより、ドライフィルム５８でスルーホール電
極５６を予め塞ぐ必要もなくなる。When the molds 72 and 73 are used as described above,
The first and second resin layers 66 and 70 can be formed separately for each chip, and only the large-sized insulating substrate 52 needs to be cut in the subsequent cutting and dividing step. Therefore, no load is applied to the first and second resin layers 66 and 70 at the time of cutting, and disconnection and damage to the light emitting element 60 can be prevented. Further, the amount of resin injected into the molds 72 and 73 can be minimized, and the material cost can be reduced. Furthermore, Y of the molds 72 and 73
By closing the through-hole electrode 56 with the ridges 72b and 73b in the directions, it is not necessary to cover the through-hole electrode 56 with the dry film 58 in advance.

【００５０】次に、本発明の表面実装型発光ダイオード
の他の製造方法に関して説明する。この製造方法は、前
述したものと製造工程自体はほぼ同じであるが、大型絶
縁基板に形成するスルーホールの形状や金型の形状を変
えることにより、より効率良く大量生産することができ
るようにしたものである。尚、図３乃至図１６に示すも
のと同一のものに関しては同一の符号が付してある。Next, another method for manufacturing the surface-mounted light emitting diode of the present invention will be described. This manufacturing method is almost the same as the manufacturing process itself as described above, but by changing the shape of the through hole and the shape of the mold formed in the large insulating substrate, it is possible to mass-produce more efficiently. It was done. The same components as those shown in FIGS. 3 to 16 are denoted by the same reference numerals.

【００５１】はじめに、図１９及び図２０に示すような
大型絶縁基板７４を用意する。この大型絶縁基板７４に
は、複数の電極パターン５４とＹ方向にそれぞれ平行に
配置された複数の長穴からなる長穴スルーホール電極７
６が設けられている。この長穴スルーホール電極７６
は、前述したスルーホール電極５６と同様に、大型絶縁
基板７４の裏面側にまで回り込んで形成されている。First, a large-sized insulating substrate 74 as shown in FIGS. 19 and 20 is prepared. The large-sized insulating substrate 74 includes a plurality of electrode patterns 54 and a plurality of elongated holes arranged in parallel in the Y direction.
6 are provided. This elongated through-hole electrode 76
Are formed so as to extend to the back side of the large-sized insulating substrate 74 similarly to the through-hole electrode 56 described above.

【００５２】このような大型絶縁基板７４の電極パター
ン５４に、前述した製造方法と同様に、図２１及び図２
２に示すように発光素子６０をダイボンドし、図２３及
び図２４に示すように金線６１でワイヤーボンドする。The electrode pattern 54 of such a large-sized insulating substrate 74 is provided on the electrode pattern 54 in the same manner as in the above-described manufacturing method.
The light emitting element 60 is die-bonded as shown in FIG. 2 and wire-bonded with a gold wire 61 as shown in FIGS.

【００５３】その後、図２５及び図２６に示すように、
金型７８を大型絶縁基板７４の上に固定する。この金型
７８は、長穴スルーホール電極７６に対応する位置に棧
部７８ａを有しているため、長穴スルーホール電極７６
はドライフィルム等で塞ぐ必要がない。この棧部７８ａ
の間に電極パターン５４を長穴スルーホール電極７６に
沿って一群ずつ囲う長窓部７８ｂを有している。この金
型７８を大型絶縁基板７４の上に固定することにより、
長穴スルーホール電極７６は棧部７８ａで塞がれる。こ
こで前述した製造方法と同様に、蛍光染料又は蛍光顔料
等の蛍光物質や拡散剤、着色剤等をエポキシ樹脂に混入
した第１の樹脂６４を金型７８の長窓部７８ｂ内に注入
し、硬化する。Thereafter, as shown in FIGS. 25 and 26,
The mold 78 is fixed on the large insulating substrate 74. Since this mold 78 has a protrusion 78 a at a position corresponding to the elongated hole through-hole electrode 76, the elongated hole through-hole electrode 76 is formed.
Need not be closed with a dry film or the like. This section 78a
A long window portion 78b enclosing the electrode pattern 54 in groups along the long hole through-hole electrode 76 is provided. By fixing the mold 78 on the large insulating substrate 74,
The elongated hole through-hole electrode 76 is closed by the ridge 78a. Here, similarly to the above-described manufacturing method, a first resin 64 in which a fluorescent substance such as a fluorescent dye or a fluorescent pigment, a diffusing agent, a coloring agent, or the like is mixed into an epoxy resin is injected into the long window 78b of the mold 78. To cure.

【００５４】その後、金型７８を取り外し、ダイシング
機又はスライシング機等を用いて硬化した第１の樹脂６
４のみをＸ方向にハーフダイシングすることにより切削
する。このときに、Ｙ方向には長穴スルーホール電極７
６がドライフィルム等で塞がれることなく配設されてい
るので、Ｙ方向にはハーフダイシングを行なわずＸ方向
のみハーフダイシングを行なう。これにより、図２７及
び図２８に示すように、１チップの表面実装型発光ダイ
オード毎に対応するようにＸ方向の溝部６４ｂを形成し
て分割される。尚、本実施例においては、金型７８の長
窓部７８ｂのＸ方向の寸法を１チップの表面実装型発光
ダイオードの絶縁基板のＸ方向の寸法よりも僅かに小さ
く設定すると共に、第１の樹脂６４を分割する際に、１
チップの表面実装型発光ダイオードの絶縁基板のＹ方向
の寸法よりも第１の樹脂６４のＹ方向の寸法が僅かに小
さくなるように溝部６４ｂの幅を設定している。従っ
て、このようにして第１の樹脂６４を金型７８で形成し
更に溝部６４ｂで分割すると、１チップの表面実装型発
光ダイオードの絶縁基板よりも一回り小さくなるように
設定されたサイズの第１の樹脂層６６が一定の間隔をも
って大型絶縁基板７４上に多数形成されることになる。Thereafter, the mold 78 is removed, and the first resin 6 cured using a dicing machine or a slicing machine is used.
Only 4 is cut by half dicing in the X direction. At this time, the elongated through-hole electrode 7 in the Y direction
Since 6 is disposed without being blocked by a dry film or the like, half dicing is not performed in the Y direction and half dicing is performed only in the X direction. As a result, as shown in FIGS. 27 and 28, the X-direction grooves 64b are formed and divided so as to correspond to each one-chip surface-mounted light-emitting diode. In the present embodiment, the dimension in the X direction of the long window portion 78b of the mold 78 is set to be slightly smaller than the dimension in the X direction of the insulating substrate of the one-chip surface-mount type light emitting diode, and the first dimension is set. When dividing resin 64,
The width of the groove 64b is set so that the dimension in the Y direction of the first resin 64 is slightly smaller than the dimension in the Y direction of the insulating substrate of the surface-mounted light emitting diode of the chip. Therefore, when the first resin 64 is formed by the mold 78 and divided by the groove 64b in this manner, the first resin 64 having a size set to be one size smaller than the insulating substrate of the one-chip surface mount type light emitting diode is provided. A large number of one resin layers 66 are formed on the large-sized insulating substrate 74 at regular intervals.

【００５５】上記のように第１の樹脂層６６を形成した
後、図２９及び図３０に示すように、金型７９を大型絶
縁基板７４上に固定する。この金型７９は、金型７８と
同様に長穴スルーホール電極７６に対応する位置に棧部
７９ａを有し、この棧部７９ａの間に第１の樹脂層６６
を長穴スルーホール電極７６に沿って一群ずつ囲う長窓
部７９ｂを有している。この長窓部７９ｂは、第１の樹
脂層６６あるいは金型７８の長窓部７８ｂよりも一回り
大きく且つ深くなるように形成されているため、金型７
９の長窓部７９ｂの内面と各第１の樹脂層６６との間に
は、溝部６４ｂの約２分の１程度の間隔が生じることに
なる。このような金型７９の長窓部７９ｂ内の一群の第
１の樹脂層６６の上に前述した紫外線吸収剤等の老化防
止剤をエポキシ樹脂に混入した第２の樹脂６８を注入し
て、金型７９内を満たす。上述したように、長窓部７９
ｂの内面と第１の樹脂層６６との間には一定の間隔が生
じるように設定されているため、この長窓部７９ｂに第
２の樹脂６８を注入することにより第１の樹脂層６６は
その周囲の端面及び上表面が全て第２の樹脂６８で覆わ
れる。その後、キュア工程にて第２の樹脂６８を硬化さ
せて、第２の樹脂層７０（図３１）を形成する。After forming the first resin layer 66 as described above, the mold 79 is fixed on the large-sized insulating substrate 74 as shown in FIGS. The mold 79 has a protrusion 79a at a position corresponding to the elongated through-hole electrode 76 similarly to the mold 78, and the first resin layer 66 is provided between the protrusions 79a.
Are arranged in groups along the long hole through-hole electrode 76. The long window portion 79b is formed so as to be slightly larger and deeper than the long window portion 78b of the first resin layer 66 or the mold 78.
An interval of about 1/2 of the groove 64b is generated between the inner surface of the long window portion 79b and the first resin layer 66. On the group of first resin layers 66 in such a long window portion 79b of the mold 79, a second resin 68 in which an anti-aging agent such as the above-mentioned ultraviolet absorber is mixed with an epoxy resin is injected. Fill mold 79. As described above, the long window portion 79
b is set so as to have a certain distance between the inner surface of the first resin layer 66 and the first resin layer 66. By injecting the second resin 68 into the long window portion 79 b, the first resin layer 66 is formed. The entire end surface and the upper surface thereof are covered with the second resin 68. Thereafter, the second resin 68 is cured in a curing step to form a second resin layer 70 (FIG. 31).

【００５６】図３１及び図３２に示すように、ここで金
型７９を取り外し、前述した製造方法と同様に切断分割
して単体のチップ部品にする。その際に、大型絶縁基板
７４にはＹ方向に長穴スルーホール電極７６が設けられ
て分割されているため、この長穴スルーホール電極７６
に直交するＸ方向に切断するだけで１チップずつの部品
に分割することができる。As shown in FIGS. 31 and 32, the mold 79 is removed here, and cut and divided into single chip parts in the same manner as in the above-described manufacturing method. At this time, the large-sized insulating substrate 74 is provided with the elongated through-hole electrode 76 in the Y direction and is divided.
By simply cutting in the X direction orthogonal to the above, it can be divided into components of one chip at a time.

【００５７】上記製造方法にて製造された表面実装型発
光ダイオードにおいては、図３３及び図３４に示すよう
に、長穴スルーホール電極７６であった部分が、分割さ
れた絶縁基板７４ｃの側面電極７６ａとなる。また、長
穴スルーホール電極７６が金型７８、７９の棧部７８
ａ、７９ａで塞がれるため、長穴スルーホール電極７６
の長穴内周部分には第１及び第２の樹脂６４、６８が流
れ込まず、絶縁基板７４ｃの側面電極７６ａから離れた
基板内側位置に第１及び第２の樹脂層６６、７０が形成
された形状となる。In the surface-mounted light emitting diode manufactured by the above-described manufacturing method, as shown in FIGS. 33 and 34, the portion that was the elongated through-hole electrode 76 was replaced with the side electrode of the divided insulating substrate 74c. 76a. In addition, the elongated hole through-hole electrode 76 is formed with the support 78 of the molds 78 and 79.
a, 79a, so that the elongated through-hole electrode 76
The first and second resins 64 and 68 did not flow into the inner peripheral portion of the long hole, and the first and second resin layers 66 and 70 were formed at positions inside the insulating substrate 74c away from the side electrodes 76a. Shape.

【００５８】上記製造方法においては、前述したものと
同様に作業性が良く、蛍光物質等の理想的な最適位置へ
の混入を可能とするものであり、更に、切断分割工程に
おいて一方向にのみ切断するだけで１チップの部品に分
割することができるため、量産性を更に向上させること
が可能となる。In the above-described manufacturing method, the workability is good as described above, and the fluorescent material or the like can be mixed into an ideal optimum position. Since it can be divided into one-chip components only by cutting, mass productivity can be further improved.

【００５９】また、この製造方法において用いている金
型７８、７９に代えて図１７及び図１８に示す金型７
２、７３を使用することも可能であり、その際には、金
型７２のＹ方向の棧部７２ｂ、７３ｂで長穴スルーホー
ル電極７６を塞ぐように大型絶縁基板７４上に固定す
る。更に、金型７８、７９と金型７２、７３を組み合わ
せて使用することも可能である。但し、金型７２、７３
を使用した場合、及び金型７２と金型７９の組み合わせ
で使用した場合には、第１の樹脂層６６が所定の１チッ
プサイズで形成されるため、これをハーフダイシングし
て分割したりサイズを整える必要がなくなるが、金型７
８と金型７３の組合せで使用した場合には、上記の製造
方法と同様に第１の樹脂６４をハーフダイシングして分
割しサイズを整えることにより第１の樹脂層６６を形成
することが必要になる。Also, instead of the dies 78 and 79 used in this manufacturing method, the dies 7 shown in FIGS.
2 and 73 can be used. In this case, the metal mold 72 is fixed on the large-sized insulating substrate 74 so as to cover the long-hole through-hole electrode 76 with the Y-direction supporting portions 72b and 73b. Further, the dies 78, 79 and the dies 72, 73 can be used in combination. However, the dies 72, 73
When the first resin layer 66 is used in combination with the mold 72 and the mold 79, the first resin layer 66 is formed with a predetermined one chip size. It is no longer necessary to prepare
When the first resin layer 66 is used in combination with the mold 8 and the mold 73, it is necessary to form the first resin layer 66 by half-dicing the first resin 64 and dividing the first resin 64 in the same manner as in the above-described manufacturing method. become.

【００６０】[0060]

【発明の効果】本発明によれば、発光素子を覆う樹脂層
を２層構造とし、蛍光物質等を混入した第１の樹脂層で
発光素子を覆い、老化防止剤を混入した第２の樹脂層で
第１の樹脂層の全表面を覆っている。このため、発光素
子の周囲に蛍光物質を集めることができ、蛍光物質を理
想的な最適位置への混入状態にすることができる。ま
た、第２の樹脂層によりエポキシ樹脂、蛍光物質、発光
素子等を紫外線による劣化から防ぐことができる。According to the present invention, the resin layer covering the light emitting element has a two-layer structure, the light emitting element is covered with the first resin layer containing a fluorescent substance or the like, and the second resin containing the antioxidant is mixed. The layer covers the entire surface of the first resin layer. For this reason, the fluorescent substance can be collected around the light emitting element, and the fluorescent substance can be mixed into the ideal optimal position. Further, the second resin layer can prevent the epoxy resin, the fluorescent substance, the light emitting element, and the like from being deteriorated by ultraviolet rays.

【００６１】また、リードフレーム等のリード端子のな
い表面実装型の発光ダイオードであるため、自動マウン
トが可能で、大量に一括してリフロー半田付けができ
る。Further, since the light emitting diode is a surface mount type light emitting diode having no lead terminal such as a lead frame, it can be automatically mounted, and can be reflow soldered in a large amount at once.

【００６２】更に、大型絶縁基板上に数百から数千個単
位での一括集合処理で順次部品を取り付け樹脂で覆って
行くだけの簡単な製造方法であるため、一度に高い密度
で多数の発光ダイオードを形成することができ、生産性
に優れ、大量生産が可能な製造方法となっている。この
ように、量産性を大幅に引き上げることが可能となるた
め、製造コストを大幅に引き下げて、コストを大幅に低
くすることができる。Further, since it is a simple manufacturing method in which parts are sequentially mounted on a large insulating substrate in units of several hundreds to thousands in units of collective assembling and covered with resin, a large number of light-emitting elements can be formed at once at a high density. This is a manufacturing method in which a diode can be formed, the productivity is excellent, and mass production is possible. As described above, since mass productivity can be significantly increased, manufacturing costs can be significantly reduced and costs can be significantly reduced.

【００６３】更にまた、本発明の製造方法においては、
樹脂層の成形時に、基板の表裏を逆にする必要がないた
め、樹脂内の蛍光物質等が沈殿しても、下方にある発光
素子の周囲に集まることになるので、最も理想的な位置
に蛍光物質等を混入することができる。Further, in the production method of the present invention,
When molding the resin layer, it is not necessary to reverse the front and back of the substrate, so even if the fluorescent substance etc. in the resin precipitates, it will gather around the light emitting element below, so it should be in the most ideal position A fluorescent substance or the like can be mixed.

【００６４】また、複雑な成形機や金型を必要とせず、
更に、リードフレーム材やリードフレーム成形用のプレ
ス機、切断機等も不要であるため、設備費を大幅に削減
することができる。更に、本発明の製造方法において
は、上記のような成形機、プレス機あるいはそれらに用
いる金型のようなメンテナンスを要するものを用いてい
ないため、ランニングコストも削減することができる。Further, no complicated molding machine and mold are required,
Furthermore, since a lead frame material, a press machine for forming the lead frame, a cutting machine, and the like are not required, equipment costs can be significantly reduced. Furthermore, in the manufacturing method of the present invention, since a machine requiring maintenance such as the above-described molding machine, press machine, or mold used for them is not used, running costs can be reduced.

【００６５】また、本発明の製造方法においては、第１
及び第２の樹脂層を、一つ又は二つの金型を用いて且つ
ほぼ同様の連続した工程で形成しているので、第１及び
第２の樹脂層をそれぞれ全く異なる工程で形成する場合
に比べて、作業性が良く、スムーズ且つ迅速に製造する
ことができる。In the manufacturing method of the present invention, the first
And the second resin layer is formed by using one or two molds and in substantially the same continuous steps. Therefore, when the first and second resin layers are respectively formed in completely different steps, In comparison, the workability is good, and the production can be performed smoothly and quickly.

【００６６】更に、射出成形金型を使ったインサート成
形ではなく、簡易金型での樹脂成形のため、インサート
成形において必要とされるペレットを特別に発注したり
購入する必要がなく、材料費も削減することができる。Furthermore, since resin molding is carried out in a simple mold instead of insert molding using an injection mold, there is no need to specially order or purchase pellets required for insert molding, and material costs are reduced. Can be reduced.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明の一実施例に係る表面実装型発光ダイオ
ードを示す斜視図である。FIG. 1 is a perspective view showing a surface-mounted light emitting diode according to an embodiment of the present invention.

【図２】図１に示す表面実装型発光ダイオードの断面図
である。FIG. 2 is a cross-sectional view of the surface-mounted light emitting diode shown in FIG.

【図３】本発明の製造方法において使用する大型絶縁基
板を示す斜視図である。FIG. 3 is a perspective view showing a large-sized insulating substrate used in the manufacturing method of the present invention.

【図４】図３に示す大型絶縁基板の断面図である。FIG. 4 is a cross-sectional view of the large-sized insulating substrate shown in FIG.

【図５】図３に示す電極パターン上に発光素子をダイボ
ンドした状態を示す斜視図である。FIG. 5 is a perspective view showing a state where a light emitting element is die-bonded on the electrode pattern shown in FIG. 3;

【図６】図５の要部断面図である。FIG. 6 is a sectional view of a main part of FIG. 5;

【図７】図５に示す発光素子を電極パターンにワイヤー
ボンドした状態を示す斜視図である。FIG. 7 is a perspective view showing a state where the light emitting device shown in FIG. 5 is wire-bonded to an electrode pattern.

【図８】図７の要部断面図である。FIG. 8 is a sectional view of a main part of FIG. 7;

【図９】図７に示す大型絶縁基板に金型を固定して第１
の樹脂を注入した状態を示す斜視図である。FIG. 9 shows a first example in which a mold is fixed to the large insulating substrate shown in FIG.
FIG. 4 is a perspective view showing a state where the resin is injected.

【図１０】図９の要部断面図である。FIG. 10 is a sectional view of a main part of FIG. 9;

【図１１】硬化した第１の樹脂をハーフダイシングした
状態を示す斜視図である。FIG. 11 is a perspective view showing a state in which the cured first resin is half-diced.

【図１２】図１１の要部断面図である。FIG. 12 is a sectional view of a main part of FIG. 11;

【図１３】図１１に示す大型絶縁基板に金型を固定して
第２の樹脂を注入した状態を示す斜視図である。13 is a perspective view showing a state where a mold is fixed to the large-sized insulating substrate shown in FIG. 11 and a second resin is injected.

【図１４】図１３の要部断面図である。FIG. 14 is a sectional view of a main part of FIG.

【図１５】図１３に示す金型を取り外した状態を示す斜
視図である。FIG. 15 is a perspective view showing a state in which the mold shown in FIG. 13 is removed.

【図１６】図１５の要部断面図である。FIG. 16 is a sectional view of a main part of FIG.

【図１７】第１の樹脂層を形成する他の金型を示す斜視
図である。FIG. 17 is a perspective view showing another mold for forming the first resin layer.

【図１８】第２の樹脂層を形成する他の金型を示す斜視
図である。FIG. 18 is a perspective view showing another mold for forming a second resin layer.

【図１９】本発明の他の製造方法において使用する大型
絶縁基板を示す斜視図である。FIG. 19 is a perspective view showing a large-sized insulating substrate used in another manufacturing method of the present invention.

【図２０】図１９に示す大型絶縁基板の断面図である。20 is a sectional view of the large-sized insulating substrate shown in FIG.

【図２１】図１９に示す電極パターン上に発光素子をダ
イボンドした状態を示す斜視図である。21 is a perspective view showing a state where a light emitting element is die-bonded on the electrode pattern shown in FIG.

【図２２】図２１の要部断面図である。FIG. 22 is a sectional view of a main part in FIG. 21;

【図２３】図２１に示す発光素子を電極パターンにワイ
ヤーボンドした状態を示す斜視図である。FIG. 23 is a perspective view showing a state in which the light emitting device shown in FIG. 21 is wire-bonded to an electrode pattern.

【図２４】図２３の要部断面図である。FIG. 24 is a sectional view of a main part of FIG. 23;

【図２５】図２３に示す大型絶縁基板に金型を固定して
第１の樹脂を注入した状態を示す斜視図である。25 is a perspective view showing a state where a mold is fixed to the large-sized insulating substrate shown in FIG. 23 and a first resin is injected.

【図２６】図２５の要部断面図である。FIG. 26 is a sectional view of a main part of FIG. 25;

【図２７】硬化した第１の樹脂をハーフダイシングした
状態を示す斜視図である。FIG. 27 is a perspective view showing a state in which the cured first resin is half-diced.

【図２８】図２７の要部断面図である。FIG. 28 is a sectional view of a main part of FIG. 27;

【図２９】図２７に示す大型絶縁基板に金型を固定して
第２の樹脂を注入した状態を示す斜視図である。FIG. 29 is a perspective view showing a state where a mold is fixed to the large-sized insulating substrate shown in FIG. 27 and a second resin is injected.

【図３０】図２９の要部断面図である。30 is a cross-sectional view of a main part in FIG. 29.

【図３１】図２９に示す金型を取り外した状態を示す斜
視図である。FIG. 31 is a perspective view showing a state where the mold shown in FIG. 29 is removed.

【図３２】図３１の要部断面図である。FIG. 32 is a sectional view of a main part of FIG. 31.

【図３３】他の製造方法で製造した表面実装型発光ダイ
オードの斜視図である。FIG. 33 is a perspective view of a surface-mounted light emitting diode manufactured by another manufacturing method.

【図３４】図３３に示す表面実装型発光ダイオードの断
面図である。FIG. 34 is a cross-sectional view of the surface-mounted light emitting diode shown in FIG.

【図３５】従来の発光ダイオードを示す断面図である。FIG. 35 is a sectional view showing a conventional light emitting diode.

【図３６】従来の発光ダイオードを示す断面図である。FIG. 36 is a cross-sectional view showing a conventional light emitting diode.

【図３７】従来の発光ダイオードを示す正面図である。FIG. 37 is a front view showing a conventional light emitting diode.

【図３８】従来の発光ダイオードを示す断面図である。FIG. 38 is a sectional view showing a conventional light emitting diode.

【図３９】従来の発光ダイオードを製造する際のインサ
ート成形の状態を示す断面図である。FIG. 39 is a cross-sectional view showing a state of insert molding when manufacturing a conventional light emitting diode.

【図４０】インサート成形に使用するペレットを示す斜
視図である。FIG. 40 is a perspective view showing a pellet used for insert molding.

【図４１】図４０に示すペレットの拡大斜視図である。FIG. 41 is an enlarged perspective view of the pellet shown in FIG. 40.

【図４２】従来の発光ダイオードにおける樹脂内の蛍光
剤の沈殿状態を示す断面図である。FIG. 42 is a cross-sectional view showing a precipitated state of a fluorescent agent in a resin in a conventional light emitting diode.

【図４３】図４２に示す発光ダイオードを回路基板に取
り付けた使用状態を示す断面図である。FIG. 43 is a sectional view showing a state of use in which the light emitting diode shown in FIG. 42 is mounted on a circuit board.

【符号の説明】[Explanation of symbols]

２、４ リードフレーム ６、８ 端子ピン １０ 発光素子 １２、１４、１６、１８ 樹脂層 ２０ 継ぎ部 ２２、２４ 金型 ２６ ペレット ２８ 回路基板 ３０ 導電パターン ３２ 絶縁基板 ３４、３６ 電極パターン ３８、４０ スルーホール電極 ４２ 発光素子 ４４、４６ ドライフィルム ４８ 第１の樹脂層 ５０ 第２の樹脂層 ５２、７４ 大型絶縁基板 ５４ 電極パターン ５６ スルーホール電極 ５８ ドライフィルム ６０ 発光素子 ６１ 金線 ６２ 金型 ６４ 第１の樹脂 ６６ 第１の樹脂層 ６８ 第２の樹脂 ７０ 第２の樹脂層 ７２、７３ 金型 ７８、７９ 金型 2, 4 Lead frame 6, 8 Terminal pin 10 Light emitting element 12, 14, 16, 18 Resin layer 20 Joint 22, 24 Mold 26 Pellet 28 Circuit board 30 Conductive pattern 32 Insulating board 34, 36 Electrode pattern 38, 40 Through Hole electrode 42 Light emitting element 44, 46 Dry film 48 First resin layer 50 Second resin layer 52, 74 Large insulating substrate 54 Electrode pattern 56 Through hole electrode 58 Dry film 60 Light emitting element 61 Gold wire 62 Mold 64 First Resin 66 First resin layer 68 Second resin 70 Second resin layer 72, 73 Mold 78, 79 Mold

───────────────────────────────────────────────────── フロントページの続き (72)発明者 深澤 孝一 山梨県富士吉田市上暮地１丁目23番１号 株式会社シチズン電子内 Ｆターム(参考） 5F041 AA31 AA44 CA33 CA40 DA03 DA07 DA12 DA18 DA20 DA44 DA46 DB01 DB02 DB03  ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Koichi Fukasawa 1-23-1 Kagurechi, Fujiyoshida City, Yamanashi Prefecture F-term (reference) 5F041 AA31 AA44 CA33 CA40 DA03 DA07 DA12 DA18 DA20 DA44 DA46 DB01 DB02 DB03

Claims (14)

【特許請求の範囲】[Claims] 【請求項１】 絶縁基板と、 該絶縁基板の表面に形成された電極パターンと、 該電極パターンに接続された発光素子と、 該発光素子を覆い、該発光素子が発する光の光量を増す
立体状の第１の樹脂層と、 該第１の樹脂層の全表面を覆い、該第１の樹脂層及び前
記発光素子の劣化を防止する第２の樹脂層と、 からなることを特徴とする表面実装型発光ダイオード。1. An insulating substrate, an electrode pattern formed on a surface of the insulating substrate, a light emitting element connected to the electrode pattern, and a three-dimensional structure that covers the light emitting element and increases the amount of light emitted by the light emitting element. And a second resin layer covering the entire surface of the first resin layer and preventing deterioration of the first resin layer and the light emitting element. Surface mount type light emitting diode. 【請求項２】 前記第１の樹脂層には波長変換材料が混
入されていることを特徴とする請求項１記載の表面実装
型発光ダイオード。2. A surface-mounted light emitting diode according to claim 1, wherein a wavelength conversion material is mixed in said first resin layer. 【請求項３】 前記波長変換材料は、蛍光染料及び蛍光
顔料の一方又は両方からなる蛍光物質であることを特徴
とする請求項２記載の表面実装型発光ダイオード。3. The surface-mounted light-emitting diode according to claim 2, wherein said wavelength conversion material is a fluorescent substance comprising one or both of a fluorescent dye and a fluorescent pigment. 【請求項４】 前記第１の樹脂層には拡散剤及び着色剤
の一方又は両方が混入されていることを特徴とする請求
項２又は請求項３記載の表面実装型発光ダイオード。4. The surface-mounted light emitting diode according to claim 2, wherein one or both of a diffusing agent and a coloring agent are mixed in the first resin layer. 【請求項５】 前記第２の樹脂層には老化防止剤が混入
されていることを特徴とする請求項１又は請求項２又は
請求項３又は請求項４記載の表面実装型発光ダイオー
ド。5. The surface mount type light emitting diode according to claim 1, wherein an anti-aging agent is mixed in the second resin layer. 【請求項６】 前記老化防止剤は紫外線吸収剤からなる
ことを特徴とする請求項５記載の表面実装型発光ダイオ
ード。6. The surface-mounted light emitting diode according to claim 5, wherein the antioxidant comprises an ultraviolet absorber. 【請求項７】 前記発光素子は窒化ガリウム系化合物半
導体からなることを特徴とする請求項１又は請求項２又
は請求項３又は請求項４又は請求項５又は請求項６記載
の表面実装型発光ダイオード。7. The surface-mounted light emitting device according to claim 1, wherein the light emitting device is made of a gallium nitride-based compound semiconductor. diode. 【請求項８】 前記発光素子はシリコンカーバイド系化
合物半導体からなることを特徴とする請求項１又は請求
項２又は請求項３又は請求項４又は請求項５又は請求項
６記載の表面実装型発光ダイオード。8. The surface-mounted light emitting device according to claim 1, wherein the light emitting device is made of a silicon carbide compound semiconductor. diode. 【請求項９】 複数の電極パターンと複数のスルーホー
ル電極が形成された大型絶縁基板の前記スルーホール電
極をフィルムで塞ぐ工程と、 前記電極パターン上に発光素子をダイボンドする工程
と、 前記発光素子を前記電極パターンにワイヤーボンドする
工程と、 前記大型絶縁基板上に、前記複数の電極パターンを全て
囲う枠状の金型を固定し、該金型内に第１の樹脂を注入
して前記電極パターン及び前記発光素子を覆う工程と、 前記第１の樹脂を硬化させる工程と、 前記金型を取り外し、硬化後の前記第１の樹脂を基板上
面まで切削して該第１の樹脂が１チップの表面実装型発
光ダイオード毎に対応するように個々の周囲に溝部を形
成し、前記発光素子が発する光の光量を増す立体状の第
１の樹脂層を形成する工程と、 前記大型絶縁基板上に前記金型を固定し、該金型内に第
２の樹脂を注入して前記第１の樹脂層の全表面を覆い、
該第１の樹脂層及び前記発光素子の劣化を防止する第２
の樹脂層を形成する工程と、 前記第２の樹脂層を硬化させる工程と、 前記金型を取り外し、前記第２の樹脂層と共に前記大型
絶縁基板を切断して単体のチップ部品にする工程と、 からなることを特徴とする表面実装型発光ダイオードの
製造方法。9. A step of covering the through-hole electrode of the large-sized insulating substrate on which a plurality of electrode patterns and a plurality of through-hole electrodes are formed with a film; a step of die-bonding a light-emitting element on the electrode pattern; Wire bonding to the electrode pattern, fixing a frame-shaped mold surrounding the plurality of electrode patterns on the large-sized insulating substrate, and injecting a first resin into the mold to form the electrode. A step of covering the pattern and the light-emitting element; a step of curing the first resin; a step of removing the mold; and a step of cutting the cured first resin to an upper surface of a substrate to form one chip of the first resin. Forming a groove around each surface-mounting light-emitting diode so as to correspond to each of the light-emitting diodes, and forming a three-dimensional first resin layer that increases the amount of light emitted by the light-emitting element; Fixing the mold on the top, injecting a second resin into the mold to cover the entire surface of the first resin layer,
A first resin layer and a second resin layer for preventing deterioration of the light emitting element.
Forming the resin layer, curing the second resin layer, removing the mold, cutting the large-sized insulating substrate together with the second resin layer into a single chip component, A method for manufacturing a surface-mounted light emitting diode, comprising: 【請求項１０】 複数の電極パターンと複数のスルーホ
ール電極が形成された大型絶縁基板の前記電極パターン
上に発光素子をダイボンドする工程と、 前記発光素子を前記電極パターンにワイヤーボンドする
工程と、 前記大型絶縁基板上に、１チップの表面実装型発光ダイ
オードに対応する前記電極パターンをそれぞれ囲う複数
の窓部を有する第１の金型を固定し、該第１の金型の窓
部内に第１の樹脂を注入して前記電極パターン及び前記
発光素子を覆い、前記発光素子が発する光の光量を増す
立体状の第１の樹脂層を形成する工程と、 前記第１の樹脂層を硬化させる工程と、 前記第１の金型を取り外し、前記大型絶縁基板上に、前
記第１の樹脂層との間に一定の間隔を保ちながら前記第
１の樹脂層をそれぞれ囲う複数の窓部を有する第２の金
型を固定し、該第２の金型の窓部内に第２の樹脂を注入
して前記第１の樹脂層の全表面を覆い、該第１の樹脂層
及び前記発光素子の劣化を防止する第２の樹脂層を形成
する工程と、 前記第２の樹脂層を硬化させる工程と、 前記第２の金型を取り外し、前記大型絶縁基板を切断し
て単体のチップ部品にする工程と、 からなることを特徴とする表面実装型発光ダイオードの
製造方法。10. A step of die-bonding a light-emitting element on the electrode pattern of a large-sized insulating substrate having a plurality of electrode patterns and a plurality of through-hole electrodes formed thereon, and a step of wire-bonding the light-emitting element to the electrode pattern. A first mold having a plurality of windows surrounding each of the electrode patterns corresponding to the one-chip surface-mount type light emitting diode is fixed on the large-sized insulating substrate, and a first mold is fixed in the window of the first mold. A step of forming a three-dimensional first resin layer that covers the electrode pattern and the light emitting element by injecting the first resin and increases the amount of light emitted by the light emitting element; and curing the first resin layer. Removing the first mold, and having a plurality of windows respectively surrounding the first resin layer on the large-sized insulating substrate while keeping a constant distance from the first resin layer. Second A mold is fixed, and a second resin is injected into a window of the second mold to cover the entire surface of the first resin layer, thereby preventing deterioration of the first resin layer and the light emitting element. Forming a second resin layer to be cured; curing the second resin layer; removing the second mold and cutting the large-sized insulating substrate into a single chip component; A method for manufacturing a surface-mounted light-emitting diode, comprising: 【請求項１１】 複数の電極パターンと一定の方向にそ
れぞれ平行に配設された複数の長穴スルーホール電極が
形成された大型絶縁基板の前記電極パターン上に発光素
子をダイボンドする工程と、 前記発光素子を前記電極パターンにワイヤーボンドする
工程と、 前記大型絶縁基板上に、前記長穴スルーホール電極をそ
れぞれ塞ぐ複数の棧部と該棧部の間に形成され前記電極
パターンを一群ずつそれぞれ囲う複数の長窓部を有する
第１の金型を固定し、該第１の金型の長窓部内に第１の
樹脂を注入して前記電極パターン及び前記発光素子を覆
う工程と、 前記第１の樹脂を硬化させる工程と、 前記第１の金型を取り外し、硬化後の前記第１の樹脂を
基板上面まで切削して該第１の樹脂が１チップの表面実
装型発光ダイオード毎に対応するように個々にするため
の溝部を形成し、前記発光素子が発する光の光量を増す
立体状の第１の樹脂層を形成する工程と、 前記大型絶縁基板上に、前記長穴スルーホール電極をそ
れぞれ塞ぐ複数の棧部と該棧部の間に形成され前記第１
の樹脂層との間に一定の間隔を保ちながら前記第１の樹
脂層を一群ずつそれぞれ囲う複数の長窓部を有する第２
の金型を固定し、該第２の金型内に第２の樹脂を注入し
て前記第１の樹脂層の全表面を覆い、該第１の樹脂層及
び前記発光素子の劣化を防止する第２の樹脂層を形成す
る工程と、 前記第２の樹脂層を硬化させる工程と、 前記第２の金型を取り外し、前記第２の樹脂層と共に前
記大型絶縁基板を切断して単体のチップ部品にする工程
と、 からなることを特徴とする表面実装型発光ダイオードの
製造方法。11. A step of die-bonding a light-emitting element on the electrode pattern of a large-sized insulating substrate on which a plurality of electrode patterns and a plurality of elongated through-hole electrodes disposed in parallel with each other in a predetermined direction are formed. A step of wire bonding a light emitting element to the electrode pattern; and forming a plurality of groups on the large-sized insulating substrate, each group surrounding the electrode pattern formed between a plurality of ridges for closing the elongated hole through-hole electrodes. Fixing a first mold having a plurality of long windows, injecting a first resin into the long windows of the first mold to cover the electrode pattern and the light emitting element; Curing the resin, removing the first mold, cutting the cured first resin to the upper surface of the substrate, and the first resin corresponds to each one-chip surface-mount type light emitting diode. like Forming a three-dimensional first resin layer for increasing the amount of light emitted from the light emitting element, and closing the elongated through-hole electrodes on the large-sized insulating substrate, respectively. A first member formed between the plurality of members and the first member;
A second window having a plurality of long windows which respectively surround the first resin layer in a group while maintaining a constant distance between the first resin layer and the second resin layer.
And the second resin is injected into the second mold to cover the entire surface of the first resin layer, thereby preventing the first resin layer and the light emitting element from deteriorating. A step of forming a second resin layer; a step of curing the second resin layer; a step of removing the second mold and cutting the large-sized insulating substrate together with the second resin layer to form a single chip A method of manufacturing a surface-mounted light-emitting diode, comprising the steps of: 【請求項１２】 複数の電極パターンと一定の方向にそ
れぞれ平行に配設された複数の長穴スルーホール電極が
形成された大型絶縁基板の前記電極パターン上に発光素
子をダイボンドする工程と、 前記発光素子を前記電極パターンにワイヤーボンドする
工程と、 前記大型絶縁基板上に、１チップの表面実装型発光ダイ
オードに対応する前記電極パターンをそれぞれ囲う複数
の窓部を有する金型を固定し、該金型の窓部内に第１の
樹脂を注入して前記電極パターン及び前記発光素子を覆
い、該発光素子が発する光の光量を増す立体状の第１の
樹脂層を形成する工程と、 前記第１の樹脂層を硬化させる工程と、 前記第１の金型を取り外し、前記大型絶縁基板上に、前
記第１の樹脂層との間に一定の間隔を保ちながら前記第
１の樹脂層をそれぞれ囲う複数の窓部を有する第２の金
型を固定し、該第２の金型の窓部内に第２の樹脂を注入
して前記第１の樹脂層の全表面を覆い、該第１の樹脂層
及び前記発光素子の劣化を防止する第２の樹脂層を形成
する工程と、 前記第２の樹脂層を硬化させる工程と、 前記金型を取り外し、前記大型絶縁基板を切断して単体
のチップ部品にする工程と、 からなることを特徴とする表面実装型発光ダイオードの
製造方法。12. A step of die-bonding a light-emitting element on the electrode pattern of a large-sized insulating substrate having a plurality of electrode patterns and a plurality of elongated through-hole electrodes disposed in parallel with each other in a predetermined direction; A step of wire bonding a light emitting element to the electrode pattern, and fixing a mold having a plurality of windows respectively surrounding the electrode patterns corresponding to one chip surface mount type light emitting diode on the large insulating substrate, A step of injecting a first resin into a window of a mold to cover the electrode pattern and the light emitting element, and forming a three-dimensional first resin layer for increasing the amount of light emitted by the light emitting element; Curing the first resin layer, removing the first mold, and disposing the first resin layer on the large-sized insulating substrate while maintaining a constant distance from the first resin layer. A second mold having a plurality of windows is fixed, and a second resin is injected into the windows of the second mold to cover the entire surface of the first resin layer. A step of forming a resin layer and a second resin layer for preventing deterioration of the light emitting element; a step of curing the second resin layer; a step of removing the mold and cutting the large-sized insulating substrate to form a single unit; A method for producing a surface-mounted light emitting diode, comprising: a step of forming a chip component; 【請求項１３】 複数の電極パターンと一定の方向にそ
れぞれ平行に配設された複数の長穴スルーホール電極が
形成された大型絶縁基板の前記電極パターン上に発光素
子をダイボンドする工程と、 前記発光素子を前記電極パターンにワイヤーボンドする
工程と、 前記大型絶縁基板上に、１チップの表面実装型発光ダイ
オードに対応する前記電極パターンをそれぞれ囲う複数
の窓部を有する金型を固定し、該金型の窓部内に第１の
樹脂を注入して前記電極パターン及び前記発光素子を覆
い、該発光素子が発する光の光量を増す立体状の第１の
樹脂層を形成する工程と、 前記第１の樹脂層を硬化させる工程と、 前記第１の金型を取り外し、前記大型絶縁基板上に、前
記長穴スルーホール電極をそれぞれ塞ぐ複数の棧部と該
棧部の間に形成され前記第１の樹脂層との間に一定の間
隔を保ちながら前記第１の樹脂層を一群ずつそれぞれ囲
う複数の長窓部を有する第２の金型を固定し、該第２の
金型内に第２の樹脂を注入して前記第１の樹脂層の全表
面を覆い、該第１の樹脂層及び前記発光素子の劣化を防
止する第２の樹脂層を形成する工程と、 前記第２の樹脂層を硬化させる工程と、 前記金型を取り外し、前記第２の樹脂層と共に前記大型
絶縁基板を切断して単体のチップ部品にする工程と、 からなることを特徴とする表面実装型発光ダイオードの
製造方法。13. a step of die-bonding a light-emitting element on the electrode pattern of a large-sized insulating substrate having a plurality of electrode patterns and a plurality of elongated through-hole electrodes disposed in parallel with each other in a predetermined direction; A step of wire bonding a light emitting element to the electrode pattern, and fixing a mold having a plurality of windows respectively surrounding the electrode patterns corresponding to one chip surface mount type light emitting diode on the large insulating substrate, A step of injecting a first resin into a window of a mold to cover the electrode pattern and the light emitting element, and forming a three-dimensional first resin layer for increasing the amount of light emitted by the light emitting element; Curing the first resin layer; removing the first mold, forming a plurality of joints on the large-sized insulating substrate, each covering the elongated hole through-hole electrode; A second mold having a plurality of long windows surrounding each group of the first resin layer is fixed while maintaining a constant interval between the first mold and the first resin layer. A step of injecting a second resin to cover the entire surface of the first resin layer and forming a second resin layer for preventing deterioration of the first resin layer and the light emitting element; A step of curing a resin layer; and a step of removing the mold and cutting the large-sized insulating substrate together with the second resin layer into a single chip component. Manufacturing method. 【請求項１４】 複数の電極パターンと一定の方向にそ
れぞれ平行に配設された複数の長穴スルーホール電極が
形成された大型絶縁基板の前記電極パターン上に発光素
子をダイボンドする工程と、 前記発光素子を前記電極パターンにワイヤーボンドする
工程と、 前記大型絶縁基板上に、前記長穴スルーホール電極をそ
れぞれ塞ぐ複数の棧部と該棧部の間に形成され前記電極
パターンを一群ずつそれぞれ囲う複数の長窓部を有する
第１の金型を固定し、該第１の金型の長窓部内に第１の
樹脂を注入して前記電極パターン及び前記発光素子を覆
う工程と、 前記第１の樹脂を硬化させる工程と、 前記第１の金型を取り外し、硬化後の前記第１の樹脂を
基板上面まで切削して該第１の樹脂が１チップの表面実
装型発光ダイオード毎に対応するように個々にするため
の溝部を形成し、前記発光素子が発する光の光量を増す
立体状の第１の樹脂層を形成する工程と、 前記大型絶縁基板上に、前記第１の樹脂層との間に一定
の間隔を保ちながら前記第１の樹脂層をそれぞれ囲う複
数の窓部を有する第２の金型を固定し、該第２の金型の
窓部内に第２の樹脂を注入して前記第１の樹脂層の全表
面を覆い、該第１の樹脂層及び前記発光素子の劣化を防
止する第２の樹脂層を形成する工程と、 前記第２の樹脂層を硬化させる工程と、 前記金型を取り外し、前記大型絶縁基板を切断して単体
のチップ部品にする工程と、 からなることを特徴とする表面実装型発光ダイオードの
製造方法。14. A step of die-bonding a light-emitting element on the electrode pattern of a large-sized insulating substrate having a plurality of electrode patterns and a plurality of elongated through-hole electrodes disposed in parallel with each other in a predetermined direction; A step of wire bonding a light emitting element to the electrode pattern; and forming a plurality of groups on the large-sized insulating substrate, each group surrounding the electrode pattern formed between a plurality of ridges for closing the elongated hole through-hole electrodes. Fixing a first mold having a plurality of long windows, injecting a first resin into the long windows of the first mold to cover the electrode pattern and the light emitting element; Curing the resin, removing the first mold, cutting the cured first resin to the upper surface of the substrate, and the first resin corresponds to each one-chip surface-mount type light emitting diode. like Forming a three-dimensional first resin layer for increasing the amount of light emitted by the light-emitting element; and forming a three-dimensional first resin layer on the large-sized insulating substrate between the first resin layer and the first resin layer. A second mold having a plurality of windows surrounding each of the first resin layers is fixed while maintaining a constant interval to the first resin layer, and a second resin is injected into the windows of the second mold to form the second mold. Forming a second resin layer covering the entire surface of the first resin layer and preventing the first resin layer and the light emitting element from deteriorating; curing the second resin layer; Removing the mold and cutting the large-sized insulating substrate into a single chip component. A method for manufacturing a surface-mounted light-emitting diode, comprising:
JP37756998A 1998-12-29 1998-12-29 Method for manufacturing surface mount light emitting diode Expired - Lifetime JP3332880B2 (en)

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Publication number Priority date Publication date Assignee Title
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JP2002344030A (en) * 2001-05-18 2002-11-29 Stanley Electric Co Ltd Lateral emission surface-mounted led and its manufacturing method
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US7078737B2 (en) 2002-09-02 2006-07-18 Matsushita Electric Industrial Co., Ltd. Light-emitting device
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002198572A (en) * 2000-12-27 2002-07-12 Rohm Co Ltd Infrared rays data communication module and its manufacturing method
JP2002344030A (en) * 2001-05-18 2002-11-29 Stanley Electric Co Ltd Lateral emission surface-mounted led and its manufacturing method
JP2002368286A (en) * 2001-06-11 2002-12-20 Citizen Electronics Co Ltd Light-emitting diode and method of manufacturing the same
US7295592B2 (en) 2002-03-08 2007-11-13 Sharp Kabushiki Kaisha Light source device and optical communication module employing the device
JP2004172578A (en) * 2002-09-02 2004-06-17 Matsushita Electric Ind Co Ltd Light-emitting device
US7078737B2 (en) 2002-09-02 2006-07-18 Matsushita Electric Industrial Co., Ltd. Light-emitting device
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