JP2000200898A - Semiconductor device and fabrication thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To enhance read out resolution while reducing the cost of a contact type, perfect contact type image sensor by forming a thin insulating film at least partially between a second electrode and a thin film semiconductor layer or between the thin film semiconductor layer and a first electrode constituting a photoelectric conversion part. SOLUTION: An insulating thin film 5 is formed between a second metal electrode 7 and a thin film semiconductor 4 and the thin film 5 also exists between the sensor pits in a photoelectric conversion element region. Furthermore, the pattern end part of the semiconductor thin film existing between sensor pits is coated with the insulating thin film 5 and since an electrode material is not left in the vicinity of the step of the pattern, leak current between sensor pits is reduced significantly. At the same time, leak current between first and second electrodes 3, 7 is also decreased. Read out resolution of an image sensor can be enhanced by reducing the leak current flowing between adjacent electrodes 6, 7 through a semiconductor layer.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an image sensor applicable to a facsimile, an image scanner, a digital copying machine and the like.

[0002]

2. Description of the Related Art In recent years, with the spread of facsimile,
There is a demand for smaller, lighter, and less expensive image sensors. Image sensors used in facsimile machines, image scanners, digital copiers and the like are roughly classified into three types: non-contact type, contact type, and perfect contact type.

At present, the non-contact type using a CCD projects a document onto the CCD through a reduction lens system, and thus is disadvantageous in terms of miniaturization and weight reduction as compared with the other two systems.
This is advantageous in terms of price, because it can be produced by an LSI process using a silicon wafer that is currently established and the CCD chip can be small.

On the other hand, the contact type and the complete contact type are more advantageous than the non-contact type in reducing the size and weight, but the production cost is high due to the difficulty in the manufacturing process, mounting and assembly, and the selfoc lens array The use of high-priced components such as glass and thin glass is a major factor that hinders the cost reduction of these two types of image sensors.

More specifically, a contact type image sensor for facsimile is mainly of a multi-chip type in which a number of MOS LSI chips are mounted and a thin-film type in which an amorphous silicon thin film or the like is formed on an insulating substrate using an optical sensor portion as an optical sensor. Has been

These use a selfoc lens array (an optical lens for guiding reflected light from a document to a light receiving sensor surface). In addition, since the multi-chip type is manufactured by LSI technology, which is the most advanced technology of today, the yield is considerably high and stable supply is possible. On the other hand, the production cost of the thin film type is high because the yield of the thin film semiconductor layer portion is low.

[0007]

The perfect contact type image sensor using a thin film element is most advantageous particularly in terms of miniaturization and weight reduction because it does not use a reduction lens system or a selfoc lens array. Since the yield of the thin film semiconductor layer is poor, it is one of the major factors preventing cost reduction, and it has been desired to provide a stable, high yield thin film semiconductor portion. Further, as described above, the contact type image sensor has the same problem when the photoelectric conversion element portion is a thin film element.

[0008] Usually, photoelectric conversion elements of image sensors are known as a photoconductor type and a photodiode type.
Has been put to practical use. In general, the photoconductor type has a feature of being resistant to noise because it can flow a large current, but has a poor light response and is disadvantageous for a demand for high-speed facsimile. On the other hand, the photodiode type has a small current, but has a fast response to light, and is expected to become mainstream in the future.

FIG. 2 is a top view and a schematic cross-sectional view of only a photoelectric conversion element portion of a conventional photodiode type image sensor.
(A) and (B). In FIG. 1, an insulating film (silicon oxide film) 21 for blocking alkali metal ions such as sodium is provided on a substrate 20. A first electrode 22 having a window 26 for light incidence opened on the insulating film 21
Is provided. An amorphous silicon thin-film semiconductor 23 is formed on the first electrode 22, and this thin-film semiconductor is a PIN diode. Further, a translucent electrode 24 is provided in the photoelectric conversion element region 27 on the thin film semiconductor 23, and a metal electrode 25 is formed in connection with the translucent electrode 24.

Normally, the thin film semiconductor has a high conductivity when exposed to light, and the first electrode 22 shields most of the light. Therefore, the first electrode 22 is provided also in a portion other than the photoelectric conversion element.

This thin film semiconductor has a thickness of 1 μm or less, and is formed by volumeizing the film by a method such as a vapor phase method, so that the first electrode 22 and the second electrode 24 There is a high probability that a short circuit or a leak occurs between 25, for example, at a portion 28, and the function as a photoelectric conversion element does not function.

Further, as shown in FIG. 3A, when an image sensor is formed by arranging the photoelectric conversion elements as shown in FIG. 2 one-dimensionally, one photoelectric conversion element 38 and the adjacent photoelectric conversion element 39 are arranged. The metal of the second electrode remains near the end portion 37 of the thin film semiconductor existing between them, and short-circuits the photoelectric conversion elements.

That is, when such an image sensor is manufactured, an acid treatment may be performed in a process after the formation of the semiconductor layer. (For example, as a pre-treatment for connecting the metal electrode to the impurity region of the TFT on the same substrate) Since hydrofluoric acid is used as the acid used in this treatment,
The silicon oxide film 31 is etched near the end 37 of the thin film semiconductor layer to form a concave portion. After that, after forming a metal layer on the front surface to form the metal electrode 35, the metal layer is patterned. However, the metal 36 remains in the concave portion, and the photoelectric conversion elements 38 and 39 are short-circuited or leaked. I was

As described above, a large number of electrical shorts and leaks occur inside or between the photoelectric conversion elements, thereby deteriorating the production yield of the photoelectric conversion device and the image sensor.

Further, in the manufacturing process, the transparent conductive films 24 and 34 are reduced in film thickness due to a necessary resist stripping solution or an etching solution for the metal thin film wiring, and defects such as coloring occur, thereby further lowering the manufacturing yield. Was.

[0016]

SUMMARY OF THE INVENTION The present invention achieves a high production yield by solving the above-mentioned problems, and realizes a low-cost production of a contact type and a perfect contact type image sensor using a thin film. And attain a high reading resolution.

That is, a photoelectric conversion device having a first electrode mainly composed of a metal material on a light-transmitting insulating substrate or an insulating film, a thin-film semiconductor layer for photoelectric conversion, and a second electrode on the thin-film semiconductor layer Wherein a thin film having an insulating property is formed between at least a portion of the second electrode and the thin film semiconductor layer constituting the photoelectric conversion portion or at least a portion between the thin film semiconductor layer and the first electrode. Photoelectric conversion device. When a plurality of photoelectric conversion devices are arranged one-dimensionally or two-dimensionally to form an image sensor, not only in the photoelectric conversion region but also in a region therebetween, that is, between sensor bits. It is characterized by extending this insulating thin film.

FIG. 1 is a schematic diagram showing this state.
FIG. 1A is a plan view of an image sensor in which photoelectric conversion devices of the present invention are arranged in a line, FIG. 1B is a schematic cross-sectional view of the photoelectric conversion device, and FIG. FIG. 3 shows a schematic cross-sectional view of a region.

In FIG. 1, an insulating thin film 5 is formed between the metal electrode 7 as the second electrode and the thin film semiconductor 4. This thin film is shown in FIG.
As shown in FIG. 2C, the thin film semiconductor 4 exists between the sensor bits between the photoelectric conversion element regions.

Further, in this figure, the photoelectric conversion device is formed so as to cover the transparent electrode 6 on the light incident surface of the photoelectric conversion device.

Thus, between the second electrode and the semiconductor thin film constituting the photoelectric conversion element or between the semiconductor thin film and the first thin film.
By forming an insulating thin film on at least one of the necessary portions between the electrodes, it is possible to greatly reduce defects such as leakage current generation and short circuit between the thin film electrodes due to pinholes or the like generated in the semiconductor thin film layer. did it.

Further, by covering the pattern end of the semiconductor thin film existing between the sensor bits with the above-mentioned insulating thin film, the electrode material does not remain near the step of the pattern, so that the leakage current between the sensor bits is reduced. And the leakage current between the second electrode and the first electrode also decreased. Since the leak current flowing through the semiconductor layer between the adjacent second electrodes is reduced, the reading resolution of the image sensor is improved.

In addition, since the insulating thin film 5 is also provided at the portion 10 (near the end of the thin film semiconductor 4) in FIG. 1B, the portion between the metal electrode 7 and the first electrode 3 at this portion is provided. , Leakage current can be prevented.

Further, when the insulating thin film is formed so as to cover not only the semiconductor layer and the electrode but also the transparent electrode on the light-irradiated surface of the photoelectric conversion region, the transparent conductive film is formed. Since the protective film is covered with the insulating film and protected, the resist stripping solution used in a later step or the etching solution of the electrode material does not cause any defects such as film reduction, coloring, and corrosion of the transparent conductive film.

[0025]

[Embodiment 1] In this embodiment, a photoelectric conversion element portion of a complete contact type image sensor is manufactured on a translucent insulating substrate 1 such as glass or quartz.

FIGS. 4 to 10 show schematic steps at that time, and FIG. 11 is a schematic plan view of the contact type image sensor of this embodiment after formation.

A silicon oxide film 2 for preventing diffusion of alkali impurities from the substrate 1 is formed on a glass substrate 1 to a thickness of 2000.degree. Using a solution of organic silica. A metal 3 having a sufficiently low etching rate with respect to an etchant such as silicon or silicon oxide, for example, chromium is formed on the silicon oxide film by a sputtering method at 1000 to 2000 °, and then a first electrode 3 serving as a light shielding layer is formed by a photolithography process. Is patterned. This state is shown in FIG. This electrode is provided with a light-introducing window 8 corresponding to one bit per sensor, and the other first electrode has a function as a light-shielding film.

Next, a semiconductor layer 4 is formed as shown in FIG.
This is obtained by forming a N-layer amorphous silicon carbide doped with phosphorus, an I-layer amorphous silicon not doped with impurities, and a P-layer amorphous silicon carbide doped with boron by a known plasma CVD method. The film thickness may be determined so as to optimize required electrical characteristics, for example, the capacitance between the second electrode and the first electrode and the characteristics of the photodiode diode. The P and N layers are 100 to 600 °, I, respectively. Suitably, the layer is between 3000 DEG and 1.2 .mu.m.

Next, a transparent conductive film of ITO6
Was formed into a film having a thickness of 700 to 2000 °, patterned into a predetermined size pattern of the photoelectric conversion element, and the previously formed semiconductor layer was dry-etched to obtain a state shown in FIG.

Next, an insulating thin film such as S
Liquid silica used as OG (spin-on-glass) is applied by a spin-on method or the like, and is annealed at a temperature that does not affect the characteristics of the semiconductor layer 4, for example, at about 200 to 300 ° C., and the solvent is removed to form a film. Thus, an insulating film 5 was formed. This film thickness depends on the metal electrode 7 of the second electrode and the first electrode 3
May be determined in consideration of the capacity between the two. The thickness can be arbitrarily changed from about 300 ° to about 1.6 μm by setting conditions such as the dilution ratio of the liquid silica, the number of rotations during spin coating, and the time. Further, this insulating film is not limited to the formation method by applying liquid silica, but includes sputtering, plasma CVD, light CVD, and normal pressure C.
An insulating material such as SiO ₂ , Si ₃ N ₄ , or SiON may be formed by a method such as VD, and the same effect is obtained. However, when the insulating film is left on the window for reading the original, a material that does not absorb the light for reading or hinders the transmission of light is not used.
Therefore, this material is appropriately changed depending on the type of the reading light and the like.

FIG. 8 shows the insulating film 5 formed as described above.
Is etched by photolithography and IT
A step of forming a contact hole 9 for making O6 and the metal electrode 7 contact is shown.

Next, as shown in FIG. 9, for example, Al is formed as a metal electrode 7 by sputtering and patterned by photolithography, thereby completing the thin film process of the sensor portion of the contact type image sensor of this embodiment. After patterning of the aluminum, the end of the semiconductor layer 4 was observed under magnification using a microscope or SEM. However, after patterning, aluminum did not exist, and sufficient insulation between the bit sensors was secured. It had been. Further, the insulating film 5 covering the end 10 of the thin film semiconductor 4
Provided, it was possible to suppress leakage at this portion between the first electrode 3 and the second electrode 7.

Thereafter, a thin glass 70 having a thickness of 50 to 100 μm is attached with an adhesive 80 to complete the image sensor. As shown in FIG. 10, a protective film 50 made of polyimide or the like may be formed before the thin glass 70 is attached.

As can be seen from FIGS. 4 to 10 and FIG. 11, the present invention can prevent a short circuit or a leak between electrodes sandwiching a thin film semiconductor, and can also prevent a short circuit or a second electrode between sensor bits. A good image sensor with no leaks and no defective bits could be realized with a high yield.

In addition, since the insulating film is provided so as to cover the transparent electrode on the photoelectric conversion region, the film thickness of the transparent electrode is reduced,
There is no defect such as discoloration, the production yield is high, and it is very advantageous for cost reduction.

[Embodiment 2] In this embodiment, the photoelectric conversion element of the complete contact type image sensor and the driving thin film transistor were formed on the same substrate.

FIGS. 12 to 22 are longitudinal sectional views showing a manufacturing process of the complementary thin film transistor mounted on the substrate of the image sensor similar to that of [Embodiment 1] and a manufacturing process of the photoelectric conversion element portion subsequently manufactured. It is.
FIG. 12 shows that 30 silicon semiconductor films 101 are formed on an insulating substrate 1.
This shows a state in which a film having a thickness of 0 to 3000 ° is formed by a known low-pressure CVD method, is subjected to a thermal annealing treatment, and is crystallized into an island shape by photolithography. The conditions for film formation by this low pressure CVD method were performed under normal conditions, but disilane was used as a reaction gas,
A film was formed at a substrate temperature of 500 ° C.

Further, a gate silicon oxide film 102 was formed to a thickness of 500 to 2000 ° by a sputtering method. At this time, the sputtering reaction gas is oxygen 100%
Alternatively, when a gate insulating film is formed as a mixed gas of argon and oxygen (oxygen concentration of 80% or more), a gate insulating film having very good interface characteristics can be realized.

Next, an amorphous silicon film 103 doped with phosphorus at a high concentration is formed to a thickness of 1000 to 3000 ° and then patterned as shown in FIG.
It was created.

FIG. 14 shows a process in which boron is ion-implanted into the entire surface in the state of FIG. 13 at a dose of about 5 × 10 ^{14 to} 3 × 10 ¹⁵ atoms / cm ² . Thus, source / drain regions 120 and 122 of the P-channel TFT are formed. Next, in order to form the source / drain regions 130 and 132 of the N-channel TFT, a mask for ion implantation such as a resist film 104 is formed so as to cover the PTFT region, and phosphorus is added to a portion desired to be NMOS to form the PTFT. Ion implantation is performed at a dose of 2 to 10 times that of the immediately implanted boron (FIG. 15).

Thereafter, the impurity implanted as described above is
Activation was performed at a temperature of 0 ° C. or higher, and hydrogenation treatment was performed to further improve the characteristics of the thin film transistor. This hydrogenation treatment is effective both in a hydrogen plasma annealing method in which hydrogen atoms are created by plasma in a vacuum chamber and a thin film transistor is exposed therein, or in a method in which hydrogen is diffused by heat at 200 to 500 ° C. Was done.

FIG. 16 shows a process of forming a silicon oxide film of 5000 to 1.5 μm as the interlayer insulating film 105. As the interlayer insulating film 105, silicon oxide, PSG film, BP
An SG film or the like is suitable, and these are formed using, for example, a normal pressure CVD method, a low pressure CVD method, a sputtering method, or the like. Alternatively, a structure may be employed in which a silicon oxide film of 500 to 2000% is formed by a sputtering method or an optical CVD method, and a large number of insulating films are stacked thereon using liquid silica.

Next, steps of fabricating a photoelectric conversion layer in the same manner as in [Example 1] are shown in FIGS. A photoelectric conversion region is formed on the interlayer insulating film 105.

A metal 3 having a sufficiently low etching rate with respect to an etchant such as silicon or silicon oxide, for example, chromium, is formed on the silicon oxide film by sputtering.
After the formation of the film having a thickness of about 2000 °, the first electrode 3 serving as a light-shielding layer is patterned by a photolithography process. This state is shown in FIG. This electrode has a sensor 1
A light introduction window 8 corresponding to each bit is provided, and the other first electrodes have a function as a light shielding film.

Next, a semiconductor layer 4 is formed. This is an N-type silicon carbide semiconductor doped with phosphorus,
A silicon semiconductor and a P-type silicon carbide semiconductor doped with boron are formed by a known plasma CVD method. The film thickness may be determined so that required electric characteristics, for example, the capacitance between the second electrode and the first electrode and the characteristics of the diode of the photodiode are optimized.
It is appropriate that the thickness is 600 ° and the I layer is 3000 ° to 1.2 μm. Next, ITO6, which is a transparent conductive film, is placed on top of this.
A film having a thickness of 0 to 2000 ° was formed, patterned into a predetermined size pattern of the photoelectric conversion element, and the previously formed semiconductor layer was dry-etched to obtain a state shown in FIG.

Next, as an insulating thin film on these upper surfaces,
A silicon nitride film 140 is formed to a thickness of 750 ° in all of the photoelectric conversion region and the TFT region by a photo CVD method. This silicon nitride film has the same function as that of the first embodiment, and at the same time, acts as a protective film for the TFT region and transfers the TFT region such as an impurity (eg, metal or alkali metal) which affects the electrical characteristics of the TFT. Has a function to prevent the intrusion of the image, helping to improve the reliability of the image sensor.
6, and also has a function as an ITO protective film. In this embodiment, a silicon nitride film is used as the protective film. In this case, however, a clean contact hole may not be formed due to a large difference in etching rate between the silicon nitride film and the underlying interlayer insulating film. Therefore, it is possible to form a beautiful contact hole by making the etching rate uniform by slightly increasing the forming temperature of the interlayer insulating film or increasing the forming speed of the silicon nitride film.

FIG. 20 shows a step of forming a contact hole for contacting the thin film transistor with the second electrode of the wiring thin film. At this time, the mask is designed so that the ITO 6 and the wiring thin film second electrode, and the contact hole for contacting the wiring thin film second electrode and the thin film first electrode are simultaneously formed. There is no increase in the number of photomasks due to the formation. A process of etching the insulating film 140 formed as described above by photolithography to form a contact hole 9 for contacting the ITO 6 and the metal electrode 7 is shown. At the same time, a contact hole 160 is similarly provided in each of the impurity regions of the TFT for forming electrodes of source and drain regions of the TFT.

Next, in order to improve the electrical connection with the impurity region, an acid treatment is performed at 1/100 HF to remove the natural oxide formed on the surface.
In the present invention, since the insulating film 140 is provided, no recess is generated at the end of the semiconductor film 4 even after the acid treatment.

Next, as shown in FIG. 21, for example, a film is formed of Al as the metal electrode 7 by sputtering, and patterning is performed by photolithography, thereby completing the thin film process of the sensor portion of the contact type image sensor of this embodiment.

After that, a thin glass sheet 111 having a thickness of 50 to 100 μm is attached with an adhesive 110 to complete the image sensor. As shown in FIG. 22, a protective film 109 made of polyimide or the like may be formed before the thin glass 111 is attached.

The image sensor manufactured in this manner has a high production yield and has a very low cost because a drive circuit using a TFT is already formed on the substrate.

[0052]

According to the present invention, by forming an insulating film except at a part between at least one of the thin film second electrode and the semiconductor thin film constituting the photoelectric conversion element or at least one between the semiconductor thin film and the thin film first electrode, the semiconductor is formed. It has become possible to greatly reduce the occurrence of leakage current between the thin film electrodes due to pinholes or the like generated in the thin film layer and defects such as short circuit.

By connecting the photoelectric conversion element to a circuit composed of thin film transistors formed on the same substrate, a low-cost image sensor with few external circuits could be manufactured with high yield.

By covering the pattern end of the semiconductor thin film with the insulating film, the electrode material was not left on the step of the pattern.
The level greatly decreased from 0 ^-6 A to 10 ^-11 A, and the leak current between the first electrode and the second electrode near the edge of the thin film semiconductor also decreased.

Further, by covering the transparent conductive film with the insulating film, film loss, coloration, corrosion, and other defects due to the resist stripping solution and the etching solution for the electrode material do not occur in principle, thereby increasing the process margin. As a result, the production yield has improved.

In addition, since the insulating film formed on the TFT region has a function as a blocking layer of impurities to the TFT region, the reliability is improved.

[Brief description of the drawings]

FIG. 1 shows a schematic cross-sectional view of a structure according to an embodiment of the present invention.

FIG. 2 is a schematic view showing a state of a conventional apparatus.

FIG. 3 is a schematic view showing a state of a conventional apparatus.

FIG. 4 shows a schematic cross-sectional view of a manufacturing process of an image sensor having a structure according to an embodiment of the present invention.

FIG. 5 is a schematic cross-sectional view of a manufacturing process of an image sensor having a structure according to an embodiment of the present invention.

FIG. 6 shows a schematic cross-sectional view of a manufacturing process of an image sensor having a structure according to an embodiment of the present invention.

FIG. 7 shows a schematic cross-sectional view of a manufacturing process of an image sensor having a structure according to an embodiment of the present invention.

FIG. 8 shows a schematic cross-sectional view of a manufacturing process of an image sensor having a structure according to an embodiment of the present invention.

FIG. 9 shows a schematic cross-sectional view of a manufacturing process of an image sensor having a structure according to an embodiment of the present invention.

FIG. 10 shows a schematic cross-sectional view of a manufacturing process of an image sensor having a structure according to an embodiment of the present invention.

FIG. 11 shows a schematic plan view of a structure according to an embodiment of the present invention.

FIG. 12 shows a schematic cross-sectional view of a manufacturing process of an image sensor having a structure according to an embodiment of the present invention.

FIG. 13 is a schematic cross-sectional view of a manufacturing process of an image sensor having a structure according to an embodiment of the present invention.

FIG. 14 is a schematic cross-sectional view of a manufacturing process of an image sensor having a structure according to an embodiment of the present invention.

FIG. 15 is a schematic cross-sectional view of a manufacturing process of an image sensor having a structure according to an embodiment of the present invention.

FIG. 16 shows a schematic cross-sectional view of a manufacturing process of an image sensor having a structure according to an embodiment of the present invention.

FIG. 17 shows a schematic cross-sectional view of a manufacturing process of an image sensor having a structure according to an embodiment of the present invention.

FIG. 18 shows a schematic cross-sectional view of a manufacturing process of an image sensor having a structure according to an embodiment of the present invention.

FIG. 19 is a schematic cross-sectional view of a manufacturing process of an image sensor having a structure according to an embodiment of the present invention.

FIG. 20 shows a schematic cross-sectional view of a manufacturing process of an image sensor having a structure according to an embodiment of the present invention.

FIG. 21 shows a schematic cross-sectional view of a manufacturing process of an image sensor having a structure according to an embodiment of the present invention.

FIG. 22 shows a schematic cross-sectional view of a manufacturing process of an image sensor having a structure according to an embodiment of the present invention.

[Explanation of symbols]

 Reference Signs List 1 substrate 3 first electrode 4 semiconductor layer 5 insulating film 6 transparent electrode (second electrode) 7 metal electrode (second electrode) 50 Protective film 60 Adhesive 70 Thin glass 101 Silicon semiconductor 102 Gate oxide film 103 Gate electrode 104 Resist (mask) 105 Interlayer insulating film

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H04N 1/028 H01L 31/10 A

Claims (16)

[Claims] 1. A semiconductor device comprising: a thin film transistor on an insulating surface; a protective film made of a resin above the thin film transistor; an adhesive; and glass, wherein the adhesive is provided between the protective film and the glass. Characteristic semiconductor device. 2. The semiconductor device according to claim 1, wherein said thin film transistor is a P-channel type TFT. 3. The semiconductor device according to claim 1, wherein the thin film transistor is an N-channel type TFT. 4. A thin film transistor comprising a thin film transistor on an insulating surface.
A semiconductor device comprising: a MOS circuit; a protective film made of a resin above the CMOS circuit; an adhesive; and glass; and the adhesive between the protective film and the glass. 5. The semiconductor device according to claim 1, wherein said protective film is made of polyimide. 6. The semiconductor device according to claim 1, further comprising a silicon nitride film above the thin film transistor. 7. A thin film transistor is formed on an insulating surface,
A method for manufacturing a semiconductor device, comprising: forming a protective film made of a resin above the thin film transistor; and bonding the protective film and glass via an adhesive. 8. A thin film transistor is formed on an insulating surface,
A method for manufacturing a semiconductor device, comprising: forming a protective film made of a resin above the thin film transistor; applying an adhesive to the protective film; and attaching the protective film and glass via the adhesive. 9. A thin film transistor is formed on an insulating surface,
A method for manufacturing a semiconductor device, comprising: forming a protective film made of a resin above the thin film transistor; applying an adhesive to glass; and attaching the protective film and the glass via the adhesive. 10. The method according to claim 7, wherein
The method for manufacturing a semiconductor device, wherein the thin film transistor is a P-channel TFT. 11. The method according to claim 7, wherein
A method for manufacturing a semiconductor device, wherein the thin film transistor is an N-channel TFT. 12. A CMOS circuit comprising a thin film transistor is formed on an insulating surface, a protective film made of a resin is formed above the CMOS circuit, and the protective film and glass are adhered via an adhesive. Of manufacturing a semiconductor device. 13. A CMOS circuit comprising a thin film transistor is formed on an insulating surface, a protective film made of a resin is formed above the CMOS circuit, and an adhesive is applied to the protective film.
A method for manufacturing a semiconductor device, comprising: attaching the protective film and glass via the adhesive. 14. A CMOS circuit comprising a thin film transistor is formed on an insulating surface, a protective film made of a resin is formed above the CMOS circuit, an adhesive is applied to glass, and the protective film and the glass are bonded to each other. A method for manufacturing a semiconductor device, comprising attaching the semiconductor device via an agent. 15. The method for manufacturing a semiconductor device according to claim 7, wherein said protective film is made of polyimide. 16. The method for manufacturing a semiconductor device according to claim 7, further comprising a silicon nitride film above the thin film transistor.