JP2000196399A - Surface acoustic wave filter and resonator - Google Patents

Surface acoustic wave filter and resonator

Info

Publication number
JP2000196399A
JP2000196399A JP10370540A JP37054098A JP2000196399A JP 2000196399 A JP2000196399 A JP 2000196399A JP 10370540 A JP10370540 A JP 10370540A JP 37054098 A JP37054098 A JP 37054098A JP 2000196399 A JP2000196399 A JP 2000196399A
Authority
JP
Japan
Prior art keywords
reflectors
reflector
acoustic wave
surface acoustic
idt electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10370540A
Other languages
Japanese (ja)
Inventor
Shozo Matsumoto
省三 松本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyo Communication Equipment Co Ltd
Original Assignee
Toyo Communication Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyo Communication Equipment Co Ltd filed Critical Toyo Communication Equipment Co Ltd
Priority to JP10370540A priority Critical patent/JP2000196399A/en
Publication of JP2000196399A publication Critical patent/JP2000196399A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To improve the blocking attenuating amount in the neighborhood of the low pass side of a passage band by constituting the electrode fingers of a reflector to be shorter as being away from IDT electrodes at both sides becomes longer in the reflector in a vertical coupled multiplex mode SAW filter constituted by means of arranging the plural IDT electrodes along the propagating direction of surface wave and by means of arranging the reflectors at both sides on a piezoelectric substrate. SOLUTION: In a double mode SAW filter, the three IDT electrodes 2, 3 and 4 are adjacently arranged along the propagating direction of surface wave and the reflectors 5a and 5b are arranged on both sides on the main surface of the piezoelectric substrate 1. The shapes of the reflectors 5a and 5b are constituted of a normal structure and a wedge shape structure. The shapes of the reflectors 5a and 5b in a part being adjacent to the IDT electrodes 2, 3 and 4 are adopted as a certain number of normal types by which surface wave is nearly perfectly reflected and the length of the electrode fingers is made to be shorter as the distance from the IDT electrodes 2, 3 and 4 becomes larger. Thus, ripples superimposed on the main lobe and side lobes are suppressed and standardized.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は弾性表面波フィルタ
と共振子に関し、特に通過域の低域側近傍の阻止減衰量
を改善した弾性表面波フィルタと、共振周波数の低周波
側のスプリアスを改善した共振子に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface acoustic wave filter and a resonator, and more particularly, to a surface acoustic wave filter with improved rejection attenuation near the lower side of the passband and a spurious on the lower frequency side of the resonance frequency. Related resonators.

【0002】[0002]

【従来の技術】近年、SAWデバイスは通信分野で広く
利用され、高性能、小型、量産性等の優れた特徴を有す
ることから特に携帯電話等に多く用いられている。図6
(a)は、従来の1次、3次縦モードを利用した1次−3次
縦結合型二重モードSAWフィルタ(以下、二重モード
SAWフィルタと称す)の構成を示す平面図であって、
圧電基板11の主面上に表面波の伝搬方向に沿って3つ
のIDT電極12、13、14を近接配置すると共に、
これらの両側にグレーティング反射器(以下、反射器と
称す)15a、15bを配設して構成したものである。
IDT電極12、13、14はそれぞれ互いに間挿し合
う複数本の電極指を有する一対のくし形電極により構成
され、IDT電極12の一方のくし形電極は入力端子IN
に接続し、他方のくし形電極は接地する。一方、IDT
電極13、14の一方のくし形電極は互いに連結して出
力端子OUTに接続すると共に、他方のくし形電極は接地
する。
2. Description of the Related Art In recent years, SAW devices have been widely used in the field of communications, and have been used particularly in mobile phones and the like because of their excellent features such as high performance, small size, and mass productivity. Figure 6
(A) is a plan view showing a configuration of a conventional first- and third-order longitudinally-coupled double-mode SAW filter using a first- and third-order longitudinal mode (hereinafter, referred to as a dual-mode SAW filter). ,
While three IDT electrodes 12, 13, and 14 are arranged close to each other along the propagation direction of the surface wave on the main surface of the piezoelectric substrate 11,
Grating reflectors (hereinafter, referred to as reflectors) 15a and 15b are provided on both sides thereof.
Each of the IDT electrodes 12, 13, and 14 is constituted by a pair of comb-shaped electrodes having a plurality of electrode fingers interposed therebetween, and one of the IDT electrodes 12 has an input terminal IN.
And the other comb electrode is grounded. On the other hand, IDT
One of the comb electrodes 13 and 14 is connected to each other and connected to the output terminal OUT, and the other comb electrode is grounded.

【0003】図6(a)に示す二重モードSAWフィルタ
の動作は、周知のように、IDT電極12、13、14
によって励起される複数の表面波が反射器15a、15
bの間に閉じ込められて音響結合し、電極パターンによ
り1次と3次の2つの縦共振モードが強勢に励振される
ため、適当な終端を施すことによりこれらの2つのモー
ドを利用した二重モードSAWフィルタとして動作す
る。なお、該二重モードSAWフィルタの通過帯域幅は
1次共振モードと3次共振モードとの周波数差で決まる
ことは周知の通りである。
As is well known, the operation of the dual mode SAW filter shown in FIG.
A plurality of surface waves excited by the reflectors 15a, 15
b, acoustic coupling is performed, and two longitudinal resonance modes of primary and tertiary order are strongly excited by the electrode pattern. Operates as a mode SAW filter. It is well known that the pass bandwidth of the dual mode SAW filter is determined by the frequency difference between the primary resonance mode and the tertiary resonance mode.

【0004】図6(b)は同図(a)に示す二重モードS
AWフィルタを2つ縦続接続した2段縦続接続型二重モー
ドSAWフィルタの構成を示す平面図であり、該フィルタ
は通過域近傍において急峻な減衰傾度を必要とする場合
や、保証減衰量を大きくする場合に用いられている。図
7(a)は36°YカットX伝搬LiTaO3基板11
上に、IDT電極12を15.5対、IDT電極13、14を
それぞれ9.5対、反射器15a、15bの本数をそれぞれ200
本、交差長60λ、電極膜厚を8%λとした場合の2段縦続
接続型二重モードSAWフィルタの特性であり、横軸は周
波数(MHz)を、縦軸は挿入損失(Loss)を表示してい
る。そして、図7(b)は同図(a)の通過域の低域側
近傍を拡大した図で、通過域の低周波側の端より低周波
側に50MHzの周波数領域の阻止域減衰量を示した図であ
る。IDT電極12、13あるいは14が呈する大きなメイン
ローブ及びサイドローブ上に小さな周期のリップルが重
畳している。
FIG. 6B shows a dual mode S shown in FIG.
FIG. 2 is a plan view showing a configuration of a two-stage cascade-type double-mode SAW filter in which two AW filters are cascade-connected. The filter requires a steep attenuation gradient near a passband or has a large guaranteed attenuation. It is used when Figure
7 (a) is a 36 ° Y-cut X-propagation LiTaO3 substrate 11
On the top, 15.5 pairs of IDT electrodes 12, 9.5 pairs of IDT electrodes 13 and 14, and 200 reflectors 15 a and 15 b respectively
This is the characteristics of a two-stage cascade-type double-mode SAW filter with a cross length of 60λ and an electrode thickness of 8% λ. The horizontal axis represents frequency (MHz), and the vertical axis represents insertion loss (Loss). it's shown. FIG. 7 (b) is an enlarged view of the vicinity of the lower side of the pass band in FIG. 7 (a). The attenuation of the stop band in the 50MHz frequency region is shifted to the lower frequency side from the lower end of the pass band. FIG. Small period ripples are superimposed on large main lobes and side lobes of the IDT electrodes 12, 13 or 14.

【0005】図7(b)に示すように、IDT電極12、1
3、14による比較的大きな周期のメインローブ及びサイ
ドローブに重畳する小さい周期的なリップルは反射器15
a、15bが形成する反射特性によって生ずる。反射器によ
る反射特性、即ち反射係数について簡単に説明すると、
反射器の波長と表面波の位相速度で決まる周波数f0で規
格化した規格化周波数f/f0を横軸に、反射係数Γを縦軸
にすると、反射器の反射係数Γは図8(a)に示すよう
に、規格化周波数f/f0が1の近傍にストップバンド、該
ストップバンドより両側に周期的な波状を形成する。こ
の特性を一般にストップバンド特性と称している。図8
(b)は2つの反射器の本数をそれぞれ100本と120本とし
た場合の反射特性を重ねて表示した図で、ストップバン
ドの両側に多数発生する周期的なリップル、即ち、山あ
るいは谷の周波数が反射器の本数でそれぞれ異なり、合
成した反射係数の曲線は山と谷の平均値に近づくことが
分かる。また、図8(c)は2つの反射器の本数を共に120
本とし、ストップバンドの中心周波数を僅かに異ならせ
た場合の反射係数を重ねて表示したものである。この特
性も多数の周期的な山あるいは谷の周波数がそれぞれ異
なり、合成した反射係数の曲線は山と谷の平均値に近づ
くことが分かる。
As shown in FIG. 7B, the IDT electrodes 12, 1
Small periodic ripples superimposed on the relatively large period main lobes and side lobes due to 3, 14
This is caused by the reflection characteristics formed by a and 15b. To briefly explain the reflection characteristics of the reflector, that is, the reflection coefficient,
When the normalized frequency f / f 0 normalized by the frequency f 0 determined by the wavelength of the reflector and the phase velocity of the surface wave is plotted on the horizontal axis, and the reflection coefficient 縦 軸 is plotted on the vertical axis, the reflection coefficient の of the reflector becomes as shown in FIG. As shown in a), a stop band is formed near a normalized frequency f / f 0 of 1 and periodic waves are formed on both sides of the stop band. This characteristic is generally called a stop band characteristic. Fig. 8
(B) is a diagram in which the reflection characteristics when the number of two reflectors is set to 100 and 120, respectively, are superimposed, and periodic ripples that occur a lot on both sides of the stop band, that is, peaks or valleys are shown. It can be seen that the frequency differs depending on the number of reflectors, and the curve of the combined reflection coefficient approaches the average value of peaks and valleys. Fig. 8 (c) shows that the number of the two reflectors is 120
In this example, the reflection coefficients when the center frequencies of the stop bands are slightly different are superimposed and displayed. This characteristic also shows that the frequency of a large number of periodic peaks or valleys is different from each other, and that the curve of the combined reflection coefficient approaches the average value of the peaks and valleys.

【0006】二重モードSAWフィルタの諸定数を設定
する際に、反射器が形成するストップバンド特性の反射
係数が1に近い平坦部に、フィルタの通過帯域が一致す
るように選ぶとフィルタの挿入損失が最小になることは
周知のことである。二重モードSAWフィルタの濾波特
性は、IDT電極が形成するトランスバーサル特性に依
存し、通過域特性はそのメインローブ特性、減衰域はそ
のサイドローブ特性に左右される。このメインローブ及
びサイドローブの上に、反射器が形成する周期的で小さ
な多数のリップルが重畳して、二重モードSAWフィル
タの阻止域減衰特性が形成される。一般的に、反射器の
本数はIDT電極対数に対し1桁以上大きな値に選ぶの
で、反射器が形成する周期性はIDT電極のそれより小
さな周期性を呈し、IDT電極が形成するメインローブ
及びサイドローブ上に重畳することになる。
When setting various parameters of the dual mode SAW filter, if the filter is selected so that the pass band of the filter coincides with a flat portion where the reflection coefficient of the stop band characteristic formed by the reflector is close to 1, the filter is inserted. It is well known that losses are minimized. The filtering characteristic of the dual mode SAW filter depends on the transversal characteristic formed by the IDT electrode, and the pass band characteristic is affected by its main lobe characteristic and the attenuation region is affected by its side lobe characteristic. A large number of periodic small ripples formed by the reflector are superimposed on the main lobe and the side lobe to form a stop band attenuation characteristic of the dual mode SAW filter. In general, the number of reflectors is selected to be at least one order of magnitude larger than the number of IDT electrode pairs, so that the periodicity formed by the reflector exhibits a smaller periodicity than that of the IDT electrode, and the main lobe and the It will be superimposed on the side lobe.

【0007】メインローブ及びサイドローブに重畳する
周期の小さなリップルによる阻止域減衰量の劣化を改善
するための手段が、特開平10−261935に開示されてい
る。即ち、IDT電極の両側に配置するリフレクタ(反
射器)のそれぞれの電極指本数を異ならせる手段や、リ
フレクタのそれぞれの電極膜厚を異ならせる手段等であ
る。図9(a)は図7に示したものと同一のパラメータを
用い、図8(b)に示した反射器の特性を利用して、4個
の反射器の本数をそれぞれ170本、180本、190本、200本
とした2段縦続接続型二重モードSAWフィルタの濾波特性
である。図9(b)は同図(a)の通過域の低域側近傍の
阻止域減衰量を周波数を拡大して表した図である。
Japanese Patent Application Laid-Open No. H10-261935 discloses a means for improving the deterioration of the attenuation of the stop band due to a ripple having a small period superimposed on the main lobe and the side lobe. That is, there are means for changing the number of electrode fingers of each of the reflectors (reflectors) arranged on both sides of the IDT electrode, means for changing the thickness of each electrode of the reflector, and the like. FIG. 9A uses the same parameters as those shown in FIG. 7, and utilizes the characteristics of the reflector shown in FIG. 8B to increase the number of four reflectors to 170 and 180, respectively. 19 shows the filtering characteristics of a two-stage cascade-type double-mode SAW filter having 190, 200, and 200 filters. FIG. 9B is a diagram illustrating the attenuation of the stop band near the low band side of the pass band in FIG. 9A with the frequency enlarged.

【0008】次に、図10(a)は、図7に示したものと同
一のパラメータを用い、反射器の波長λrefに対するI
DT電極の波長λidtの比Lt/Lrとして、それぞれ0.970
5、0.9715、0.9725、0.9735とした場合の2段縦続接続型
二重モードSAWフィルタの濾波特性を示した図である。
また、図10(b)は同図(a)の通過域の低域側近傍の阻
止域減衰量を周波数を拡大して表した図である。図9、1
0から明らかなように従来の同一本数の反射器を4個用い
た2段縦続接続型二重モードSAWフィルタの特性(図7)
よりも、通過域の低域側近傍におけるサイドローブ上に
重畳する小さなリップルが抑圧されるため、阻止減衰量
が改善されていることが分かる。
Next, FIG. 10 (a) uses the same parameters as those shown in FIG.
The ratio Lt / Lr of the wavelength λidt of the DT electrode is 0.970, respectively.
FIG. 9 is a diagram showing the filtering characteristics of a two-stage cascade-connected double-mode SAW filter in the case of 5, 0.9715, 0.9725, and 0.9735.
FIG. 10B is a diagram illustrating the attenuation of the stop band near the lower side of the pass band in FIG. Figures 9 and 1
As is clear from Fig. 0, the characteristics of a conventional two-stage cascaded dual-mode SAW filter using four reflectors of the same number (Fig. 7)
It can be seen that the small amount of ripple superimposed on the side lobe near the low band side of the passband is suppressed, and thus the amount of rejection attenuation is improved.

【0009】[0009]

【発明が解決しようとする課題】しかしながら、従来の
同じ構成の反射器を用いる2段縦続接続型二重モードS
AWフィルタの例(図7)、4個の反射器の本数をそれぞ
れ異ならせる手段を用いた例(図9)、あるいは4個の反
射器とIDT電極の波長を異ならせる手段を用いた例
(図10)にそれぞれ矢印Rの斜線部で示したように、N
−CDMAの送信チャネル906MHz±19MHzと受信チャネル851
MHz±19MHzとの隣接する領域においてにおいて、例え
ば、TXフィルタでは832MHzから870MHzの周波数範囲で要
求される40dBの減衰量を満たすことができないという問
題があった。本発明は上記問題を解決するためになされ
たものであって、通過域の低域側近傍の阻止減衰量を改
善した二重モードSAWフィルタを提供することを目的
とする。
However, a two-stage cascade-type double mode S using a conventional reflector having the same configuration is used.
Example of AW filter (FIG. 7), example using means for varying the number of four reflectors (FIG. 9), or example using means for varying the wavelength of four reflectors and IDT electrodes (FIG. 9) As shown in FIG.
− CDMA transmission channel 906MHz ± 19MHz and reception channel 851
In the region adjacent to MHz ± 19 MHz, for example, there is a problem that the TX filter cannot satisfy the required attenuation of 40 dB in the frequency range from 832 MHz to 870 MHz. SUMMARY OF THE INVENTION The present invention has been made to solve the above-described problem, and has as its object to provide a dual mode SAW filter with improved rejection attenuation near the lower side of the passband.

【0010】[0010]

【課題を解決するための手段】上記目的を達成するため
に本発明に係る弾性表面波フィルタの請求項1記載の発
明は、圧電基板上に表面波の伝搬方向に沿って複数のI
DT電極とその両側に反射器を配置して構成する縦結合
多重モードSAWフィルタにおいて、前記反射器を前記
両端のIDT電極から距離が離れるにつれて前記反射器
の電極指を短くするように構成することを特徴とする弾
性表面波フィルタである。請求項2記載の発明は、圧電
基板上に表面波の伝搬方向に沿って3個のIDT電極と
その両側に反射器を配置して構成する縦結合二重モード
SAWフィルタにおいて、前記反射器を前記両端のID
T電極から距離が離れるにつれて前記反射器の電極指を
短くするように構成することを特徴とする弾性表面波フ
ィルタである。請求項3記載の発明は、圧電基板上に表
面波の伝搬方向に沿ってIDT電極とその両側に反射器
を配置して構成する弾性表面波共振子において、前記反
射器を前記IDT電極から距離が離れるにつれて前記反
射器の電極指を短くするように構成することを特徴とす
る弾性表面波共振子である。請求項4記載の発明は、前
記反射器を正規型部と楔状部とから構成したことを特徴
とする請求項1乃至3記載の弾性表面波フィルタであ
る。請求項5記載の発明は、前記反射器を正規型部と半
楕円状部とから構成したことを特徴とする請求項1乃至
3記載の弾性表面波フィルタである。請求項6記載の発
明は、前記反射器を正規型部と半円状部とから構成した
ことを特徴とする請求項1乃至3記載の弾性表面波フィ
ルタ。
According to a first aspect of the present invention, there is provided a surface acoustic wave filter according to the present invention.
In a longitudinally coupled multi-mode SAW filter comprising a DT electrode and reflectors disposed on both sides thereof, the reflector is configured such that the electrode fingers of the reflector become shorter as the distance from the IDT electrodes at both ends increases. This is a surface acoustic wave filter characterized by the following. According to a second aspect of the present invention, there is provided a longitudinally coupled dual mode SAW filter comprising three IDT electrodes on a piezoelectric substrate along a propagation direction of a surface acoustic wave and reflectors on both sides of the IDT electrodes. ID of both ends
The surface acoustic wave filter is characterized in that the electrode finger of the reflector is shortened as the distance from the T electrode increases. According to a third aspect of the present invention, there is provided a surface acoustic wave resonator configured by arranging an IDT electrode and reflectors on both sides thereof along a propagation direction of a surface acoustic wave on a piezoelectric substrate, wherein the reflector is located at a distance from the IDT electrode. The surface acoustic wave resonator is characterized in that the electrode fingers of the reflector are shortened as the distance increases. The invention according to a fourth aspect is the surface acoustic wave filter according to any one of the first to third aspects, wherein the reflector comprises a regular-shaped portion and a wedge-shaped portion. The invention according to claim 5 is characterized in that the reflector is constituted by a regular portion and a semi-elliptical portion.
4. The surface acoustic wave filter according to 3. The invention according to claim 6 is the surface acoustic wave filter according to any one of claims 1 to 3, wherein the reflector includes a regular portion and a semicircular portion.

【0011】[0011]

【発明の実施の形態】以下本発明を図面に示した実施の
形態に基づいて詳細に説明する。図1は本発明に係る二
重モードSAWフィルタの構成を示す平面図で、圧電基
板1の主面上に表面波の伝搬方向に沿って3つのIDT電
極2、3、4を近接配置すると共に、その両側に反射器5
a、5bを配設して構成する。本発明の特徴はIDT電極
2、3、4の両側に配置した反射器5a、5bの形状にある。
即ち、反射器5a、5bの形状を正規型構造と楔型構造とか
ら構成した形状にある。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail based on an embodiment shown in the drawings. FIG. 1 is a plan view showing a configuration of a dual mode SAW filter according to the present invention, in which three IDT electrodes 2, 3, and 4 are closely arranged on a main surface of a piezoelectric substrate 1 along a propagation direction of a surface wave. 5 reflectors on each side
a and 5b are arranged and configured. The feature of the present invention is the IDT electrode
The reflectors 5a and 5b are arranged on both sides of 2, 3, and 4.
That is, the reflectors 5a and 5b have a regular structure and a wedge-shaped structure.

【0012】本願発明者はN−CDMAの送受信SAWフィ
ルタを開発すべく二重モードSAWフィルタ(1次−3次
縦モード)を試作したが、図9(b)、図10(b)に示す
ように、従来の二重モードSAWフィルタでは製造時の
バラツキ、温度、経年変化等による変動を考慮すると、
832MHzから870MHzの周波数範囲で要求される40dBの減衰
量を満たすには不十分であった。そこで、二重モードS
AWフィルタの両側の反射器を同一本数の正規型とし、
反射器の基板端部よりの端からレーザを用いて少しずつ
削り落としながら、通過域の低域側減衰量を測定した。
反射器の先端部の形状として楔型状、切り出しナイフ
状、半楕円状、半円状等種々の形状にすると低域側の減
衰特性が変動することを見出した。
The present inventor prototyped a dual-mode SAW filter (first-order to third-order longitudinal mode) in order to develop an N-CDMA transmission / reception SAW filter, as shown in FIGS. 9 (b) and 10 (b). As described above, in the conventional dual mode SAW filter, in consideration of variations at the time of manufacturing, temperature, aging, etc.,
It was insufficient to meet the required 40 dB attenuation in the frequency range from 832 MHz to 870 MHz. Therefore, the dual mode S
The same number of reflectors on both sides of the AW filter
The low-pass-side attenuation in the passband was measured while gradually shaving off the end of the reflector from the end of the substrate using a laser.
It has been found that the attenuation characteristic on the low frequency side fluctuates when the shape of the tip of the reflector is made various shapes such as a wedge shape, a cutting knife shape, a semi-elliptical shape, and a semi-circular shape.

【0013】そこで、図1に示すように、二重モードS
AWフィルタの反射器5a、5bを構成する正規型部α、
α'の本数をそれぞれ150本と、楔型部β、β'の本数を
それぞれ50本とし、他の定数は図7と同じ値としたとき
の濾波特性が図2(a)である。同図(b)は通過域の低
域側近傍の阻止減衰量を示すために周波数を拡大した図
であり、矢印Rで示す斜線範囲がN-CDMAの要求規格の40d
Bある。この図から明らかなように、図9(b)、図10
(b)のメインローブ及びサイドローブ上に重畳してい
た小さなリップルが大幅に抑圧されており、N-CDMAの要
求規格を十分に満たしている。
Therefore, as shown in FIG.
The normal type part α constituting the reflectors 5a and 5b of the AW filter,
FIG. 2 (a) shows the filtering characteristics when the number of α ′ is 150, the number of wedge-shaped portions β and β ′ is 50, and the other constants are the same as in FIG. The figure (b) is an enlarged view of the frequency in order to show the amount of stop attenuation near the lower side of the passband, and the shaded area indicated by the arrow R is 40d of the required standard of N-CDMA.
There is B. As is clear from this figure, FIG. 9 (b), FIG.
The small ripples superimposed on the main lobe and side lobes in (b) are greatly suppressed, sufficiently meeting the required standard of N-CDMA.

【0014】次に、図3(a)は反射器5a、5bを構成す
る正規型部α、α'の本数をそれぞれ100本と、楔型部
β、β'の本数をそれぞれ100本とし、他の諸定数は図7
と同じ値としたときの濾波特性である。この場合もメイ
ンローブ及びサイドローブ上に重畳していた小さなリッ
プルが大幅に抑圧されており、N-CDMAの要求規格40dBを
十分に満たしている。図3(c)は通過域低域側近傍をさ
らに拡大した図で、矢印イで示す周期的なリップルをう
つ曲線は図7(b)に示した特性であり、矢印ロ示す曲線
は図3(b)の通過域近傍の特性をさらに拡大して表した
図である。この図からも反射器によって生ずる小さなリ
ップルが大幅に抑圧されていることが分かる。
Next, FIG. 3 (a) shows that the number of normal-shaped parts α and α ′ constituting the reflectors 5a and 5b is 100 and the number of wedge-shaped parts β and β ′ is 100, respectively. Other constants are shown in Fig. 7.
It is a filtering characteristic when the same value is used. Also in this case, the small ripple superimposed on the main lobe and the side lobe is largely suppressed, and sufficiently satisfies the required standard of N-CDMA of 40 dB. FIG. 3 (c) is an enlarged view of the vicinity of the lower side of the passband. The depressed curve of the periodic ripple indicated by the arrow A is the characteristic shown in FIG. 7 (b), and the curve indicated by the arrow B is FIG. It is the figure which expanded and represented the characteristic near the passband of (b) further. It can also be seen from this figure that the small ripple caused by the reflector is greatly suppressed.

【0015】反射器5a、5bを正規型と楔型とのから構成
することにより、メインローブ及びサイドローブ上に重
畳する小さなリップルが抑圧される理由は定かではない
が、正規型部αにおける反射と楔型部βに反射とが異な
り、通過帯域から離れた周波数では互いに相殺するため
定在波とならず、リップルの山と谷の平均の値を呈する
ものと推測される。
It is not clear why the reflectors 5a and 5b are composed of the normal type and the wedge type to suppress small ripples superimposed on the main lobe and the side lobe. It is presumed that reflections at frequencies away from the pass band cancel each other out and do not become standing waves, but exhibit an average value of peaks and valleys of ripples.

【0016】図4は本発明の他の実施例で、二重モード
SAWフィルタの一方の反射器の形状のみを示す図であ
る。同図(a)に示す反射器は正規型部αと切り出しナ
イフ型部γとから構成されている。また、図4(b)に示
す反射器は正規型部αと半楕円状部δとから構成されて
いる。このように、IDT電極に隣接する部分の反射器
の形状は、表面波をほぼ完全に反射するのに十分な本数
の正規型として、IDT電極から距離が離れるにつれて
電極指の長さを短くすることにより、メインローブ及び
サイドローブ上に重畳するリップルを抑圧し、平準化す
ることが可能となった。
FIG. 4 shows another embodiment of the present invention, in which only the shape of one reflector of the dual mode SAW filter is shown. The reflector shown in FIG. 3A is composed of a regular mold part α and a cut-out knife part γ. The reflector shown in FIG. 4 (b) is composed of a normal part α and a semi-elliptical part δ. As described above, the shape of the reflector adjacent to the IDT electrode is a normal type having a sufficient number to reflect the surface wave almost completely, and the length of the electrode finger becomes shorter as the distance from the IDT electrode increases. As a result, it is possible to suppress ripples superimposed on the main lobe and the side lobes and level the ripples.

【0017】図5は他の実施例で、図4(b)に示すよう
に正規型部α100本、半楕円状部δ100本とから構成され
た反射器をIDTの両側に用い、他の諸定数は図7と同
じ値とした二重モードSAWフィルタの濾波特性例であ
る。図5(a)はフィルタ特性の全体を示し、同図(b)
は通過域の低域側近傍の阻止域減衰特性を周波数を拡大
して表示している。このこの図からも明らかなように、
メインローブ及びサイドローブ上の小さなリップルが十
分に抑圧されており、矢印Rで示すN-CDMAの規格40dBを
十分に満たしている。
FIG. 5 shows another embodiment. As shown in FIG. 4 (b), a reflector composed of 100 normal mold portions and 100 semi-elliptical portions δ is used on both sides of the IDT. The constant is an example of the filtering characteristic of the dual mode SAW filter having the same value as in FIG. Fig. 5 (a) shows the entire filter characteristics, and Fig. 5 (b)
Represents the attenuation characteristics of the stop band near the lower side of the pass band with the frequency enlarged. As is clear from this figure,
Small ripples on the main lobe and side lobes are sufficiently suppressed, sufficiently satisfying the N-CDMA standard of 40 dB indicated by the arrow R.

【0018】以上、本発明に係る二重モードSAWフィ
ルタの説明では両側の反射器を同一形状として説明した
が、両側の反射器の形状を互いに異ならせても同様な効
果が得られる。また、1次−3次縦結合二重モードSAW
フィルタを例として本発明を説明したが、本発明はこれ
のみに限定するものではなく、1次−2次縦結合二重モー
ドSAWフィルタ、1次−2次−3次縦結合三重モードS
AWフィルタ等の縦結合多重モードSAWフィルタに適
用できることは云うまでもない。さらに、本発明は横結
合多重モードSAWフィルタに適用しても効果があるこ
とが分かった。
As described above, in the description of the dual mode SAW filter according to the present invention, the reflectors on both sides are described as having the same shape. However, similar effects can be obtained by making the shapes of the reflectors on both sides different from each other. Also, a primary-tertiary longitudinally coupled dual mode SAW
Although the present invention has been described with reference to a filter as an example, the present invention is not limited to this, and the present invention is not limited thereto.
It goes without saying that the present invention can be applied to a longitudinally coupled multi-mode SAW filter such as an AW filter. Further, it has been found that the present invention is also effective when applied to a laterally coupled multi-mode SAW filter.

【0019】以上の説明は多重モードSAWフィルタに
ついて説明したが、本発明はIDT電極とその両側に配
置した反射器から構成されるSAW共振子に適用しても
効果がある。即ち、前記反射器を正規型部と楔型部とか
ら構成することにより、共振子の共振周波数の低周波側
のスプリアスを抑圧することが可能である。
Although the above description has been given of a multi-mode SAW filter, the present invention is also effective when applied to a SAW resonator composed of an IDT electrode and reflectors arranged on both sides thereof. That is, by forming the reflector from the normal type portion and the wedge type portion, it is possible to suppress spurious components on the low frequency side of the resonance frequency of the resonator.

【0020】[0020]

【発明の効果】本発明は、以上説明したように構成した
ので、二重モードSAWフィルタの通過域の低域側近傍
の阻止減衰量を改善することができ、該フィルタをN−
CDMA等のTXあるいはRFフィルタに用いれば受信機の
性能を向上させる上で優れた効果を表す。
According to the present invention, as described above, the amount of stop attenuation near the low-pass side of the pass band of the dual-mode SAW filter can be improved.
If it is used for a TX or RF filter such as CDMA, it exhibits an excellent effect in improving the performance of the receiver.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明に係る二重モードSAWフィルタの構成
を示す平面図である。
FIG. 1 is a plan view showing a configuration of a dual mode SAW filter according to the present invention.

【図2】(a)は反射器の正規型部を150本、楔型部を5
0本とした二重モードSAWフィルタの濾波特性を示す
図、(b)は通過域の低域側近傍の阻止域減衰量を示す
図である。
FIG. 2 (a) shows 150 regular-shaped reflectors and 5 wedge-shaped reflectors.
FIG. 7B is a diagram illustrating the filtering characteristics of a double mode SAW filter with zero filters, and FIG. 8B is a diagram illustrating the amount of attenuation in the stop band near the low band side of the pass band.

【図3】(a)は反射器の正規型部を100本、楔型部を1
00本とした二重モードSAWフィルタの濾波特性を示す
図、(b)は通過域の低域側近傍の阻止域減衰量を示す
図、(c)要部を拡大した図である。
FIG. 3 (a) shows 100 regular-shaped reflectors and one wedge-shaped reflector.
FIG. 7B is a diagram showing the filtering characteristics of the 00 dual-mode SAW filter, FIG. 7B is a diagram showing the amount of stop band attenuation near the low band side of the pass band, and FIG.

【図4】他の実施例で、(a)は正規型部と切り出しナ
イフ型部とから構成する反射器、(b)は正規型部と半
楕円状部とから構成する反射器の平面図図である。
4 (a) is a plan view of a reflector composed of a regular mold part and a cut-out knife-shaped part, and FIG. 4 (b) is a plan view of a reflector composed of a regular mold part and a semi-elliptical part. FIG.

【図5】(a)は反射器の正規型部を100本、半楕円部
を100本とした二重モードSAWフィルタの濾波特性を
示す図、(b)は通過域の低域側近傍の阻止域減衰量を
示す図である。
5A is a diagram showing a filtering characteristic of a dual mode SAW filter having 100 normal-shaped portions and 100 semi-elliptical portions of a reflector, and FIG. It is a figure showing a stop zone attenuation.

【図6】(a)は1次−3次縦結合二重モードSAWフィ
ルタ(二重モードSAWフィルタ)の構成を示す平面
図、(b)は2段縦続接続型二重モードSAWフィルタの
構成を示す平面図図である。
FIG. 6A is a plan view showing a configuration of a primary-tertiary-order longitudinally coupled double-mode SAW filter (double-mode SAW filter), and FIG. 6B is a configuration of a two-stage cascade-connected double-mode SAW filter. FIG.

【図7】(a)は正規型反射器の本数をそれぞれ200本
とした場合の濾波特性、(b)は通過域の低域側近傍の
阻止域減衰量を示す図である。
FIG. 7A is a diagram illustrating filtering characteristics when the number of regular reflectors is set to 200, and FIG. 7B is a diagram illustrating a stop band attenuation near a low band side of a pass band.

【図8】(a)〜(c)は反射器のストップバンド特性
で、(a)は単独の反射器で100本、(b)は100本と200
本の反射器の反射係数を合成したもの、(c)は120本の
反射器の波長をそれぞれ異ならせた反射係数を2つ合成
したものである。
8 (a) to 8 (c) show stop band characteristics of a reflector, FIG. 8 (a) shows 100 reflectors with a single reflector, and FIG.
The combination of the reflection coefficients of the two reflectors, and (c) is the combination of two reflection coefficients with different wavelengths of the 120 reflectors.

【図9】(a)は2つの反射器の本数を異ならせた二重
モードSAWフィルタの濾波特性を示す図、(b)は通
過域の低域側近傍の阻止域減衰量を示す図である。
9A is a diagram illustrating a filtering characteristic of a dual mode SAW filter in which the number of two reflectors is different, and FIG. 9B is a diagram illustrating a stop band attenuation amount near a lower side of a pass band. is there.

【図10】(a)は反射器の波長をそれぞれ異ならせた
二重モードSAWフィルタの濾波特性を示す図、(b)
は通過域の低域側近傍の阻止域減衰量を示す図である。
FIG. 10A is a diagram showing the filtering characteristics of a dual mode SAW filter in which the wavelengths of the reflectors are different, and FIG.
FIG. 7 is a diagram showing a stop band attenuation amount near a low band side of a pass band.

【符号の説明】[Explanation of symbols]

1・・圧電基板 2、3、4・・IDT電極 5a、5b・・反射器 α、α'・・反射器の正規型部 β、β'・・反射器の楔型部 R・・N-CDMAの規格の斜線部を示す イ・・従来の二重モードSAWフィルタの減衰特性 ロ・・本発明に係る二重モードSAWフィルタの減衰特
性 γ・・切り出しナイフ型部 δ・・半楕円状部
1. Piezoelectric substrate 2, 3, 4 IDT electrode 5a, 5b Reflector α, α 'Normal part of reflector β, β' ... Wedge part of reflector R N A hatched portion of the CDMA standard is shown. A. Attenuation characteristics of the conventional dual mode SAW filter b. Attenuation characteristics of the dual mode SAW filter according to the present invention γ Cut-out knife-shaped portion δ Semi-elliptical portion

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】 圧電基板上に表面波の伝搬方向に沿って
複数のIDT電極とその両側に反射器を配置して構成す
る縦結合多重モードSAWフィルタにおいて、 前記反射器を前記両端のIDT電極から距離が離れるに
つれて前記反射器の電極指を短くするように構成するこ
とを特徴とする弾性表面波フィルタ。
1. A longitudinally coupled multi-mode SAW filter comprising a plurality of IDT electrodes arranged on a piezoelectric substrate along a propagation direction of a surface acoustic wave and reflectors on both sides thereof, wherein the reflectors are arranged at IDT electrodes at both ends. A surface acoustic wave filter configured to shorten the electrode fingers of the reflector as the distance increases.
【請求項2】 圧電基板上に表面波の伝搬方向に沿って
3個のIDT電極とその両側に反射器を配置して構成す
る縦結合二重モードSAWフィルタにおいて、 前記反射器を前記両端のIDT電極から距離が離れるに
つれて前記反射器の電極指を短くするように構成するこ
とを特徴とする弾性表面波フィルタ。
2. A method according to claim 1, wherein the surface acoustic wave is propagated on the piezoelectric substrate.
In a longitudinally coupled dual mode SAW filter configured by arranging three IDT electrodes and reflectors on both sides of the IDT electrodes, the electrode fingers of the reflector are shortened as the distance from the IDT electrodes at both ends increases. A surface acoustic wave filter characterized in that:
【請求項3】 圧電基板上に表面波の伝搬方向に沿って
IDT電極とその両側に反射器を配置して構成する弾性
表面波共振子において、 前記反射器を前記IDT電極から距離が離れるにつれて
前記反射器の電極指を短くするように構成することを特
徴とする弾性表面波共振子。
3. A surface acoustic wave resonator in which an IDT electrode and reflectors are arranged on a piezoelectric substrate along a propagation direction of a surface acoustic wave and reflectors are disposed on both sides of the IDT electrode. A surface acoustic wave resonator characterized in that the electrode fingers of the reflector are configured to be short.
【請求項4】 前記反射器を正規型部と楔状部とから構
成したことを特徴とする請求項1乃至3記載の弾性表面
波フィルタ。
4. The surface acoustic wave filter according to claim 1, wherein said reflector comprises a regular portion and a wedge-shaped portion.
【請求項5】 前記反射器を正規型部と半楕円状部とか
ら構成したことを特徴とする請求項1乃至3記載の弾性
表面波フィルタ。
5. A surface acoustic wave filter according to claim 1, wherein said reflector comprises a normal part and a semi-elliptical part.
【請求項6】 前記反射器を正規型部と半円状部とから
構成したことを特徴とする請求項1乃至3記載の弾性表
面波フィルタ。
6. The surface acoustic wave filter according to claim 1, wherein said reflector comprises a regular portion and a semicircular portion.
JP10370540A 1998-12-25 1998-12-25 Surface acoustic wave filter and resonator Pending JP2000196399A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10370540A JP2000196399A (en) 1998-12-25 1998-12-25 Surface acoustic wave filter and resonator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10370540A JP2000196399A (en) 1998-12-25 1998-12-25 Surface acoustic wave filter and resonator

Publications (1)

Publication Number Publication Date
JP2000196399A true JP2000196399A (en) 2000-07-14

Family

ID=18497176

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10370540A Pending JP2000196399A (en) 1998-12-25 1998-12-25 Surface acoustic wave filter and resonator

Country Status (1)

Country Link
JP (1) JP2000196399A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1443642A2 (en) * 2003-01-24 2004-08-04 Murata Manufacturing Co., Ltd. Saw filter and communications device
US7116189B2 (en) * 2002-09-20 2006-10-03 Murata Manufacturing Co., Ltd. Surface acoustic wave device and communication apparatus including the same
US8049583B2 (en) 2008-03-10 2011-11-01 Taiyo Yuden Co., Ltd. Acoustic wave filter comprising a reflector having an oblique slit
CN112968687A (en) * 2021-02-18 2021-06-15 浙江大学 High-quality-factor surface acoustic wave resonator
US11489513B2 (en) 2018-11-16 2022-11-01 Skyworks Solutions, Inc. Multi-mode surface acoustic wave filter

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7116189B2 (en) * 2002-09-20 2006-10-03 Murata Manufacturing Co., Ltd. Surface acoustic wave device and communication apparatus including the same
EP1443642A2 (en) * 2003-01-24 2004-08-04 Murata Manufacturing Co., Ltd. Saw filter and communications device
US7015776B2 (en) 2003-01-24 2006-03-21 Murata Manufacturing Co., Ltd. Saw filter and communication device utilizing a weighted reflector
EP1443642A3 (en) * 2003-01-24 2010-03-10 Murata Manufacturing Co., Ltd. Saw filter and communications device
US8049583B2 (en) 2008-03-10 2011-11-01 Taiyo Yuden Co., Ltd. Acoustic wave filter comprising a reflector having an oblique slit
US11489513B2 (en) 2018-11-16 2022-11-01 Skyworks Solutions, Inc. Multi-mode surface acoustic wave filter
US11502668B2 (en) * 2018-11-16 2022-11-15 Skyworks Solutions, Inc. Multi-mode surface acoustic wave filter with stepped acoustic reflectors
US11545960B2 (en) 2018-11-16 2023-01-03 Skyworks Solutions, Inc. Multi-mode surface acoustic wave filter with slanted acoustic reflectors
US11949404B2 (en) 2018-11-16 2024-04-02 Skyworks Solutions, Inc. Acoustic wave component with stepped and slanted acoustic reflector
CN112968687A (en) * 2021-02-18 2021-06-15 浙江大学 High-quality-factor surface acoustic wave resonator

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