JP2000196010A - Wiring substrate module - Google Patents
Wiring substrate moduleInfo
- Publication number
- JP2000196010A JP2000196010A JP37116498A JP37116498A JP2000196010A JP 2000196010 A JP2000196010 A JP 2000196010A JP 37116498 A JP37116498 A JP 37116498A JP 37116498 A JP37116498 A JP 37116498A JP 2000196010 A JP2000196010 A JP 2000196010A
- Authority
- JP
- Japan
- Prior art keywords
- heat
- generating electronic
- wiring board
- electronic component
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、パワートランジス
タ等のパワー素子などの発熱性電子部品とともに、アル
ミニウム電解コンデンサなどの熱に弱い非発熱性電子部
品を具備する配線基板モジュールの改良に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improvement of a wiring board module including a heat-generating electronic component such as a power element such as a power transistor and a non-heat-generating electronic component weak to heat such as an aluminum electrolytic capacitor.
【０００２】[0002]
【従来技術】従来から、セラミックまたは有機樹脂など
からなる絶縁基板の表面に、ＩＣ素子等の半導体素子と
ともに、コンデンサ、抵抗素子などの電子部品を搭載し
た配線基板モジュールが知られている。最近に至って、
これらの配線基板モジュールに搭載される電子部品の高
精度化等に伴い、例えば、ＩＣ素子などの半導体素子は
それ自体の作動時の発熱量が増大する傾向にあり、それ
に伴い、その熱によって、熱に弱いその他の電子部品の
作動状態に悪影響を及ぼすことから、これらの発生した
熱をいかに効率的に放熱するかが大きな課題となってい
る。2. Description of the Related Art Conventionally, there has been known a wiring board module in which electronic components such as a capacitor and a resistance element are mounted together with a semiconductor element such as an IC element on a surface of an insulating substrate made of ceramic or organic resin. Recently,
With the increase in the precision of electronic components mounted on these wiring board modules, for example, semiconductor elements such as IC elements tend to increase the amount of heat generated during operation of the semiconductor elements themselves. Since it has an adverse effect on the operating state of other electronic components that are vulnerable to heat, how to efficiently dissipate the generated heat is a major issue.
【０００３】そこで、従来から用いられる一般的なモジ
ュールの構造を図３の概略断面図に示した。図３のモジ
ュールａによれば、絶縁基板２１の表面に配線回路２２
が形成された配線基板２３の表面に、パワートランジス
タ等のパワー素子２４、抵抗素子２５、コンデンサ２６
などの電子部品が実装されている。そして、このように
各種の電気部品が搭載された配線基板２３は、放熱性の
高い金属製ケース２７に対して高熱伝導性樹脂などの接
着剤２８によって接合されている。また、アルミニウム
電解コンデンサ２９などの大型で且つ熱に弱い電子部品
は、金属製ケース２７内の配線基板２３接合部の周囲
に、金属製ケース２７に断熱性の樹脂３０を介して搭載
され、断熱製樹脂３０の一部に形成された配線回路３１
を介して、配線基板ａ側の配線回路２２とワイヤーボン
ディング３２などによって結線されている。また、金属
製ケース２７は、放熱フィン３３と一体化されている。
さらに、パワー素子２４などの発熱性電子部品搭載部に
は、サーマルビア３４が形成される場合もある。Therefore, the structure of a general module conventionally used is shown in a schematic sectional view of FIG. According to the module a of FIG.
A power element 24 such as a power transistor, a resistor element 25, and a capacitor 26
And other electronic components are mounted. The wiring board 23 on which the various electric components are mounted is joined to a metal case 27 having high heat dissipation by an adhesive 28 such as a high heat conductive resin. A large and heat-sensitive electronic component, such as an aluminum electrolytic capacitor 29, is mounted on the metal case 27 via the heat-insulating resin 30 around the junction of the wiring board 23 in the metal case 27. Wiring circuit 31 formed on part of resin 30
Are connected to the wiring circuit 22 on the wiring board a side by wire bonding 32 or the like. Further, the metal case 27 is integrated with the radiation fin 33.
Further, a thermal via 34 may be formed in a heat-generating electronic component mounting portion such as the power element 24.
【０００４】かかる構造によれば、発熱性を有するパワ
ー素子２４から発生した熱は、絶縁基板２１やサーマル
ビア３４、高熱伝導性樹脂などの接着剤２８を経由して
金属製ケース２７に伝熱され、さらに金属製ケース２７
から放熱フィン３３に伝熱され、大気に放出される。According to such a structure, heat generated from the power element 24 having heat generation is transferred to the metal case 27 via the insulating substrate 21, the thermal via 34, and the adhesive 28 such as a high heat conductive resin. And a metal case 27
The heat is transferred to the radiation fins 33 and released to the atmosphere.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、上記モ
ジュール構造においては、熱に弱いアルミニウム電解コ
ンデンサ２９などの電子部品は、断熱性樹脂３０によっ
て断熱されているものの、コンデンサ２９自体は、断熱
性樹脂３０とともに、高熱伝導性を有するケース２７内
に収納されているために、パワー素子２４から発生した
熱が放熱フィン３３まで伝熱される過程で、金属製ケー
ス２７内を熱が伝わり、コンデンサ３０および断熱性樹
脂の周囲に熱の淀みが発生するために、その熱によって
コンデンサ３０の温度が上昇して、コンデンサの作動保
証温度以上となるなどの問題があり、従来の放熱構造で
は、十分な放熱がなされていないのが現状であった。However, in the above-mentioned module structure, electronic components such as the aluminum electrolytic capacitor 29 which are weak to heat are insulated by the heat insulating resin 30, but the capacitor 29 itself is insulated by the heat insulating resin 30. At the same time, since the heat generated from the power element 24 is transferred to the radiating fins 33 in the process of being housed in the case 27 having high thermal conductivity, the heat is transferred through the metal case 27, and The stagnation of heat around the conductive resin causes the temperature of the capacitor 30 to rise due to the heat, causing the temperature to exceed the operation guarantee temperature of the capacitor. It has not been done yet.
【０００６】従って、本発明は、パワー素子などの発熱
性電子部品とともに、アルミニウム電解コンデンサなど
の熱に弱い電子部品を兼ね備えた配線基板モジュールに
おいて、発熱性電子部品から発生した熱による熱に弱い
電子部品への影響を抑制したモジュールを提供すること
を目的とする。Accordingly, the present invention provides a wiring board module having both heat-generating electronic components such as a power element and heat-sensitive electronic components such as an aluminum electrolytic capacitor. It is an object of the present invention to provide a module in which the influence on components is suppressed.
【０００７】[0007]
【課題を解決するための手段】本発明の配線基板モジュ
ールは、絶縁基板の表面に配線回路が形成され、且つパ
ワートランジスタなどの発熱性電子部品が搭載された配
線基板を収納した金属製ケースと、電解コンデンサなど
の熱に弱い非発熱性電子部品を収納した樹脂製ケースと
を具備し、前記放熱性ケースと前記樹脂製ケースとが一
体的に結合されており、前記結合部において、前記非発
熱性電子部品と前記配線基板の回路とを結線したことを
特徴とするものである。According to the present invention, there is provided a wiring board module comprising a metal case in which a wiring circuit is formed on a surface of an insulating substrate and which houses a wiring board on which a heat-generating electronic component such as a power transistor is mounted. A resin case housing a non-heat-generating electronic component weak to heat, such as an electrolytic capacitor, wherein the heat-radiating case and the resin case are integrally connected. The heat-generating electronic component is connected to a circuit of the wiring board.
【０００８】なお、かかるモジュールにおいては、前記
金属製ケース内の前記配線基板を収納した空間と、前記
樹脂製ケース内の非発熱性電子部品を収納した空間とを
壁体によって区切ること、さらには、前記金属製ケース
には放熱フィンを接合することが望ましい。In this module, the space in which the wiring board is accommodated in the metal case and the space in which the non-heat-generating electronic components are accommodated in the resin case are separated by a wall. It is desirable that a heat radiation fin be joined to the metal case.
【０００９】[0009]
【発明の実施の形態】以下、本発明の一実施例を示す図
１、図２をもとに説明する。図１、図２は、本発明の実
施の形態における配線基板モジュールの概略断面図であ
る。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIGS. 1 and 2 are schematic sectional views of a wiring board module according to an embodiment of the present invention.
【００１０】図１、図２の配線基板モジュールＡによれ
ば、絶縁基板１の表面に適当な導体材料によって配線回
路２が形成された配線基板３を具備し、その基板３表面
には、少なくとも発熱性電子部品４が搭載されている。
上記発熱性電子部品４は、絶縁基板１の表面に被着形成
された配線回路２に対して、Ａｇペーストや半田ペース
ト等によって実装されている。そして、絶縁基板１の発
熱性電子部品４の搭載部直下には、基板の表面から裏面
にまで貫通するように伝熱用ビアホール導体、いわゆる
サーマルビア５が形成されており、発熱性電子部品４の
搭載部直下の配線回路２は、このサーマルビア５と接続
されている。According to the wiring board module A shown in FIGS. 1 and 2, a wiring board 3 having a wiring circuit 2 formed of a suitable conductive material on the surface of an insulating substrate 1 is provided. A heat-generating electronic component 4 is mounted.
The heat-generating electronic component 4 is mounted on the wiring circuit 2 formed on the surface of the insulating substrate 1 by using an Ag paste or a solder paste. Immediately below the mounting portion of the heat-generating electronic component 4 of the insulating substrate 1, a heat-transfer via-hole conductor, that is, a thermal via 5 is formed so as to penetrate from the front surface to the rear surface of the substrate. Is connected to the thermal via 5.
【００１１】また、配線基板２の表面には、比較的高い
耐熱温度を有する電子部品として、セラミックコンデン
サ６、セラミック抵抗素子７などの電子部品が搭載され
ている。なお、発熱性電子部品４としては、パワー素
子、ハイブリッドＩＣ素子、パワートランジスタ、パワ
ー抵抗素子の群から選ばれる少なくとも１種が挙げられ
る。On the surface of the wiring board 2, electronic components such as a ceramic capacitor 6 and a ceramic resistance element 7 are mounted as electronic components having a relatively high heat resistance temperature. The heat-generating electronic component 4 includes at least one selected from the group consisting of a power element, a hybrid IC element, a power transistor, and a power resistance element.
【００１２】そして、この配線基板２は、放熱性に優れ
た銅、アルミニウム、あるいはそれらを含む合金のうち
の１種からなる金属製ケース８内に収納され、金属製ケ
ース８内の底壁に熱伝導性に優れたシリコーン系樹脂、
アセチレン系樹脂、ピロール系樹脂などからなる接着剤
９を介して接合することにより収納されている。The wiring board 2 is housed in a metal case 8 made of one of copper, aluminum, or an alloy containing them, which is excellent in heat dissipation, and is mounted on a bottom wall in the metal case 8. Silicone resin with excellent thermal conductivity,
It is housed by bonding via an adhesive 9 made of acetylene-based resin, pyrrole-based resin, or the like.
【００１３】一方、配線基板モジュールＡ内には、耐熱
性が低い非発熱性電子部品１０として、アルミニウム電
解コンデンサなどの電解コンデンサ、発振器のうちの少
なくとも１種を搭載する。これらの耐熱性の低い電子部
品１０としては、特に作動保証温度が１２５℃以下のも
のが挙げられる。On the other hand, in the wiring board module A, at least one of an electrolytic capacitor such as an aluminum electrolytic capacitor and an oscillator is mounted as the non-heat-generating electronic component 10 having low heat resistance. Examples of the electronic components 10 having low heat resistance include those having an operation guarantee temperature of 125 ° C. or less.
【００１４】このような非発熱性電子部品１０は、断熱
性樹脂からなるケース１１内に収納されており、この樹
脂製ケース１１は、金属製ケース８の側面にて接着剤１
２によって一体化されている。なお、樹脂製ケース１１
と金属製ケース８との一体化の方法としては、接着剤１
２の他に、ネジ止め、かしめなど周知の固定方法を採用
し得る。用いられる断熱性有機樹脂としては、ポリブチ
ルレテフタレート樹脂、ポリエチレンテレフタレート樹
脂、変性ポリフェニレンオキサイド樹脂、ポリフェニレ
ンサルファイト樹脂などが挙げられ、これらの中でもポ
リブチルテレフタレート樹脂が望ましい。Such a non-heat-generating electronic component 10 is housed in a case 11 made of a heat-insulating resin.
2 are integrated. The resin case 11
The method of integrating the metal case 8 with the metal case 8 is as follows.
In addition to 2, known fixing methods such as screwing and caulking can be adopted. Examples of the heat-insulating organic resin used include polybutyl terephthalate resin, polyethylene terephthalate resin, modified polyphenylene oxide resin, polyphenylene sulphite resin and the like, and among these, polybutyl terephthalate resin is desirable.
【００１５】また、この樹脂製ケース１１には、非発熱
性電子部品１０と電気的に接続された配線回路１３が形
成されており、ケース１１の金属製ケース８内に収納さ
れた配線基板３と対向する部分にまで形成されている。A wiring circuit 13 electrically connected to the non-heat-generating electronic component 10 is formed in the resin case 11, and the wiring board 3 housed in the metal case 8 of the case 11 is formed. Is formed up to the portion opposed to.
【００１６】そして、この配線回路１３は、金属製ケー
ス８内に収納された配線基板３表面の配線回路２と、ワ
イヤーボンディング、リボンなどの導電性接続部材１４
によって電気的に接続されている。The wiring circuit 13 includes a wiring circuit 2 on the surface of the wiring board 3 housed in the metal case 8 and a conductive connection member 14 such as a wire bonding or a ribbon.
Are electrically connected by
【００１７】そして、発熱性電子部品４を搭載した配線
基板３を収納する金属製ケース８は、金属製蓋体１５
ａ、非発熱性電子部品１０を収納した断熱性樹脂製ケー
ス１１は、樹脂製の蓋体１５ｂによってそれぞれ密閉さ
れている。The metal case 8 for housing the wiring board 3 on which the heat-generating electronic components 4 are mounted is a metal cover 15.
a, The heat-insulating resin case 11 housing the non-heat-generating electronic component 10 is sealed by a resin lid 15b.
【００１８】なお、この金属製ケース８と、断熱性樹脂
製ケース１１とは、異なる蓋体によって密閉収納するこ
とが最も望ましいが、金属製の蓋体によって全体を密閉
することも可能である。It is most preferable that the metal case 8 and the heat-insulating resin case 11 be hermetically housed by different lids, but it is also possible to seal the whole with a metal lid.
【００１９】本発明によれば、上記のように、発熱性電
子部品４を搭載した配線基板３を放熱性の高い金属製ケ
ース８内に収納することにより、発熱性電子部品４から
発生した熱を効率的に放熱することができる。また、非
発熱性電子部品９を発熱性電子部品４とは独立した断熱
性樹脂製ケース１０内に収納することにより、従来のよ
うな金属製ケース５を経由して発熱性電子部品４から発
生した熱が熱に弱い非発熱性電子部品９まで伝達される
のを防止することができる結果、非発熱性電子部品９周
囲における熱の淀みなどの発生を防止し、非発熱性電子
部品の動作の安定性を確保することができる。According to the present invention, as described above, the wiring board 3 on which the heat-generating electronic component 4 is mounted is housed in the metal case 8 having high heat dissipation, so that the heat generated from the heat-generating electronic component 4 is obtained. Can be efficiently dissipated. In addition, since the non-heat-generating electronic component 9 is housed in the heat-insulating resin case 10 independent of the heat-generating electronic component 4, the heat-generating electronic component 4 is generated from the heat-generating electronic component 4 via the metal case 5 as in the related art. As a result, it is possible to prevent the generated heat from being transmitted to the non-heat-generating electronic component 9 that is weak to heat, thereby preventing generation of heat stagnation around the non-heat-generating electronic component 9 and operating the non-heat-generating electronic component. Stability can be ensured.
【００２０】また、本発明の配線基板モジュールによれ
ば、発熱性電子部品４から発生した熱の非発熱性電子部
品９への影響を抑制するために、図１に示すように、金
属製ケース８内の配線基板３を収納した空間ａと、断熱
性樹脂製ケース１１内の非発熱性電子部品１０を収納し
た空間ｂとを、断熱性樹脂からなる壁体１６によって区
切ることが望ましい。Further, according to the wiring board module of the present invention, in order to suppress the influence of heat generated from the heat-generating electronic component 4 on the non-heat-generating electronic component 9, as shown in FIG. It is desirable that the space a in which the wiring board 3 is stored in 8 and the space b in which the non-heat-generating electronic components 10 in the heat insulating resin case 11 are stored are separated by the wall 16 made of heat insulating resin.
【００２１】さらに、発熱性電子部品４から発生した熱
を効率的に大気中に放熱するために、金属製ケース８に
対しては、放熱フィン１７を接合することによって、さ
らに、発熱性電子部品４から発生した熱の非発熱性電子
部品１０への影響を抑制することができる。Further, in order to efficiently radiate the heat generated from the heat-generating electronic component 4 to the atmosphere, heat-dissipating fins 17 are joined to the metal case 8 to further heat the heat-generating electronic component. 4 can suppress the influence on the non-heat-generating electronic component 10.
【００２２】また、発熱性電子部品４から発生した熱の
放熱性を高めるために、金属製ケース８内の空間ａに熱
伝導性樹脂１８、例えば、シリコーングリス等のゲル状
の樹脂からなる熱伝導性ゲル状樹脂を充填することもで
きる。この放熱ゲルは、配線基板３の表面に搭載された
発熱性電子部品４から発生した熱を放熱ゲルを介して金
属製ケース８に伝達することができる。また、放熱ゲル
は、弾性を有するので、基板３表面に実装される電子部
品に影響を与えることがなく、電子部品が脱落したり配
線が切断されたりするのを防止することができる。Further, in order to enhance the heat dissipation of the heat generated from the heat-generating electronic component 4, a space a in the metal case 8 is provided in the space a in the metal case 8 by a heat conductive resin 18, for example, a gel resin such as silicone grease. A conductive gel resin can also be filled. The heat radiating gel can transfer heat generated from the heat-generating electronic component 4 mounted on the surface of the wiring board 3 to the metal case 8 via the heat radiating gel. In addition, since the heat radiating gel has elasticity, it does not affect the electronic components mounted on the surface of the substrate 3 and can prevent the electronic components from falling off and the wires from being cut.
【００２３】配線基板３における絶縁基板１は、エポキ
シ樹脂などの有機樹脂や、Ａｌ2 Ｏ3 、Ｓｉ3 Ｎ4 、Ａ
ｌＮなどの絶縁性セラミック焼結体から構成されるが、
特に、自動車回路基板などのように、過酷な使用条件化
での耐久性を考慮した場合、上記セラミック焼結体から
なるのが望ましい。The insulating substrate 1 of the wiring substrate 3 is made of an organic resin such as an epoxy resin, Al 2 O 3 , Si 3 N 4 ,
It is composed of an insulating ceramic sintered body such as 1N,
In particular, when considering durability under severe use conditions, such as an automobile circuit board, it is desirable that the ceramic sintered body is used.
【００２４】また、配線回路２は、銅、銀、金、あるい
はこれらを含む合金などの高熱伝導性金属によって構成
することが望ましいが、絶縁基板１が、Ａｌ2 Ｏ3 、Ｓ
ｉ3Ｎ4 、ＡｌＮなどのセラミック焼結体からなり、こ
れらの焼結体と同時焼成によって形成する場合には、
Ｗ、Ｍｏなどの高融点金属から構成される。The wiring circuit 2 is desirably made of a high heat conductive metal such as copper, silver, gold, or an alloy containing them, but the insulating substrate 1 is made of Al 2 O 3 , S
When made of ceramic sintered bodies such as i 3 N 4 and AlN, and formed by simultaneous firing with these sintered bodies,
It is composed of a high melting point metal such as W or Mo.
【００２５】また、絶縁基板１の表面の配線回路２は、
Ａｌ2 Ｏ3 、Ｓｉ3 Ｎ4 、ＡｌＮなどのセラミック焼結
体に対しても、例えば、銅ペーストを印刷塗布した後、
８００〜１１００℃で焼き付け処理することによっても
形成することができる。The wiring circuit 2 on the surface of the insulating substrate 1
For example, after printing and applying a copper paste to a ceramic sintered body such as Al 2 O 3 , Si 3 N 4 , AlN,
It can also be formed by baking at 800 to 1100 ° C.
【００２６】サーマルビア５は、絶縁基板１がセラミッ
ク材料からなる場合、未焼成のグリーンシートにマイク
ロドリル等によって孔あけした後、その孔内に金属ペー
ストを充填し、所望により複数のグリーンシートを積層
した後、グリーンシートと同時焼成することにより形成
することができる。このサーマルビア５も絶縁基板１が
前記セラミック焼結体から構成され、基板と同時焼成し
て形成する場合には、Ｗ、Ｍｏなどの高融点金属によっ
て形成する必要がある。When the insulating substrate 1 is made of a ceramic material, the thermal via 5 is formed by drilling a hole in an unfired green sheet with a microdrill or the like, and then filling the hole with a metal paste. After lamination, it can be formed by firing simultaneously with the green sheet. This thermal via 5 is also required to be formed of a high melting point metal such as W or Mo when the insulating substrate 1 is made of the ceramic sintered body and is formed by firing simultaneously with the substrate.
【００２７】[0027]
【実施例】本発明の効果を確認するに際し、まず、Ａｌ
2 Ｏ3 を主成分とする粉末原料に、有機バインダ、可塑
剤、溶剤等を添加して混合し、ドクターブレード法によ
って、セラミックグリーンシートを成形した。次に、該
セラミックグリーンシートの所定の位置に孔あけ加工法
によって所定の直径の図示しないスルーホール及び伝熱
用ビアホールを形成した。続いて、タングステン（Ｗ）
を主成分とする粉末原料に、有機バインダ、可塑剤、溶
剤等を添加し、混合して得た金属ペーストを配線回路パ
ターンに印刷した。また、前記スルーホール及び伝熱用
ビアホールには、前記金属ペーストを充填した。EXAMPLES In order to confirm the effects of the present invention, first, Al
An organic binder, a plasticizer, a solvent, and the like were added to and mixed with a powder raw material containing 2 O 3 as a main component, and a ceramic green sheet was formed by a doctor blade method. Next, through holes and heat transfer via holes (not shown) having a predetermined diameter were formed at predetermined positions of the ceramic green sheet by a boring method. Then, tungsten (W)
A metal paste obtained by adding an organic binder, a plasticizer, a solvent, and the like to a powder raw material containing as a main component and printing the resultant was printed on a wiring circuit pattern. The metal paste was filled in the through holes and the via holes for heat transfer.
【００２８】このような方法を繰り返し、前記配線回
路、スルーホール及び伝熱用ビアホールが形成されたセ
ラミックグリーンシートを複数枚形成する。The above method is repeated to form a plurality of ceramic green sheets on which the wiring circuit, the through holes, and the via holes for heat transfer are formed.
【００２９】次に、各セラミックグリーンシートを、配
線回路、スルーホール及び伝熱用ビアホール５が電気的
及び熱的に接続されるように位置合わせをして積層し、
水素（Ｈ2 ）、窒素（Ｎ2 ）等の還元性雰囲気下におい
て焼成することによって、配線基板を形成した。Next, the ceramic green sheets are aligned and laminated so that the wiring circuit, the through hole, and the heat transfer via hole 5 are electrically and thermally connected.
The wiring substrate was formed by firing in a reducing atmosphere such as hydrogen (H 2 ) and nitrogen (N 2 ).
【００３０】その後、電子部品実装時のダイペーストの
接着性、はんだ濡れ性を改善するために、配線回路にニ
ッケル（Ｎｉ）めっき層を形成し、さらにめっき層の上
に金（Au）めっきを施した。Thereafter, in order to improve the adhesion of the die paste and the solder wettability when mounting electronic components, a nickel (Ni) plating layer is formed on the wiring circuit, and gold (Au) plating is further performed on the plating layer. gave.
【００３１】続いて、前記配線基板の配線回路上に銀
（Ａｇ）ペーストのダイペーストを介してＩＣチップの
ベアチップを取り付け、アルミニウム線を使用するワイ
ヤボンディングによって結線を行った後、エポキシ系の
樹脂又はシリコン系の樹脂によって封止を行った。Subsequently, a bare chip of an IC chip is mounted on the wiring circuit of the wiring board via a die paste of silver (Ag) paste, and connection is performed by wire bonding using an aluminum wire. Alternatively, sealing was performed with a silicon-based resin.
【００３２】一方、配線基板の他の表面の配線回路には
んだを塗布し、コンデンサや抵抗部品を搭載して、リフ
ロー炉内において配線基板Ａを通すことによって、各電
子部品を配線基板表面にはんだ実装した。On the other hand, solder is applied to the wiring circuit on the other surface of the wiring board, capacitors and resistance components are mounted, and the wiring board A is passed through a reflow furnace, whereby each electronic component is soldered on the wiring board surface. Implemented.
【００３３】このようにして、電子部品を搭載された配
線基板Ａをアルミニウムからなる金属製ケースにシリコ
ーン系樹脂からなる接着剤を用いて固定した。一方、ポ
リブチルテレフタレート樹脂からなる樹脂ケースを前記
金属製ケースに対して、シリコーン系樹脂からなる接着
剤を用いて接合し一体化した。そして、樹脂ケース内に
アルミニウム電解コンデンサを収納し、コンデンサの接
続パッドと、樹脂ケース内に設けられた燐青銅リードか
らなる電気回路とを抵抗溶接法で接続した。その後、樹
脂ケースに形成されたパッドと、配線基板のパッドとを
アルミニウムワイヤによってワイヤボンディング法で接
続した。そして、アルミニウムからなる蓋体によって金
属製ケースおよび樹脂ケースの開口部を封止した。Thus, the wiring board A on which the electronic components were mounted was fixed to the metal case made of aluminum using the adhesive made of silicone resin. On the other hand, a resin case made of polybutyl terephthalate resin was joined to the metal case by using an adhesive made of a silicone resin to be integrated. Then, the aluminum electrolytic capacitor was housed in the resin case, and the connection pads of the capacitor were connected to the electric circuit made of phosphor bronze leads provided in the resin case by resistance welding. Thereafter, the pads formed on the resin case and the pads on the wiring board were connected by a wire bonding method using aluminum wires. Then, the openings of the metal case and the resin case were sealed with a lid made of aluminum.
【００３４】このようにして作製した配線基板モジュー
ルについて評価を行った。アルミナ絶縁基板の表面にタ
ングステンからなる配線回路が形成された配線基板に、
発熱性電子部品の代わりに、ヒータ状のチップを実装
し、Ａｕリボン及び半田を用いて配線回路と結線を行っ
た。そして、この配線基板をアルミニウムからなるケー
ス（配線基板実装部の厚み５ｍｍ）にシリコーン系樹脂
からなる接着剤を用いて接着した。The wiring board module thus manufactured was evaluated. On a wiring board with a wiring circuit made of tungsten formed on the surface of an alumina insulating substrate,
A heater-like chip was mounted in place of the heat-generating electronic component, and a wiring circuit was connected using an Au ribbon and solder. Then, this wiring board was bonded to a case made of aluminum (thickness of the wiring board mounting portion: 5 mm) using an adhesive made of silicone resin.
【００３５】また、アルミニウム電解コンデンサを搭載
する樹脂ケースとして、ポリブチルテレフタレート樹脂
を使用した。A polybutyl terephthalate resin was used as a resin case for mounting an aluminum electrolytic capacitor.
【００３６】各発熱性電子部品を想定して、ヒータチッ
プを所定の発熱量で発熱させた後、チップ自体の温度と
アルミニウム電解コンデンサの温度をそれぞれ熱電対で
測定し、その結果を表１に示した。Assuming each heat-generating electronic component, the heater chip was heated at a predetermined heating value, and then the temperature of the chip itself and the temperature of the aluminum electrolytic capacitor were measured with a thermocouple, and the results are shown in Table 1. Indicated.
【００３７】また、他の実施例として、図１、図２のモ
ジュール構造において、金属製ケースをアルミニウム製
蓋体により、樹脂製ケースをＰＢＴ樹脂からなる蓋体に
よってそれぞれ別体で密閉したもの、金属製ケース内の
空間にシリコン樹脂からなるゲルを充填したもの、壁体
を除去したものを種々の組み合わせで作製した。As another embodiment, in the module structure shown in FIGS. 1 and 2, the metal case is sealed by an aluminum cover, and the resin case is sealed by a cover made of PBT resin. A variety of combinations were prepared in which the space inside the metal case was filled with a gel made of silicone resin and the wall was removed.
【００３８】また、比較例として、図３の構造のモジュ
ール（Ｎo.８）、図３のモジュールにおいて金属製ケー
スの厚みを２０ｍｍに厚くしたもの（Ｎo.７）、図３の
モジュールにおいて発熱性電子部品の搭載箇所を電解コ
ンデンサ設置部から最も離れた箇所に実装したモジュー
ル（Ｎo.６）についても同様に測定を行った。As a comparative example, a module having the structure shown in FIG. 3 (No. 8), a module in which the thickness of the metal case is increased to 20 mm (No. 7) in the module in FIG. The same measurement was performed for the module (No. 6) in which the mounting position of the electronic component was mounted at the position farthest from the electrolytic capacitor installation portion.
【００３９】なお、発熱性電子部品においては１５０℃
以下、アルミニウム電解コンデンサにおいては１２５℃
以下が作動保証温度である。よって、発熱性電子部品に
おいては、１５０℃、アルミニウム電解コンデンサにお
いては１２５℃を限界温度として評価を行った。In the case of a heat-generating electronic component, the temperature is 150 ° C.
Hereinafter, 125 ° C. for aluminum electrolytic capacitors
The following is the operation guarantee temperature. Therefore, the evaluation was made with the limiting temperature of 150 ° C. for the heat-generating electronic component and 125 ° C. for the aluminum electrolytic capacitor.
【００４０】[0040]
【表１】 [Table 1]
【００４１】表１から明らかなように、アルミニウム電
解コンデンサを金属製ケース内に配線基板とともに収納
した場合、発熱性電子部品を最も離間させた場合におい
ても、発熱性電子部品温度が１４０℃で、アルミニウム
電解コンデンサの温度は１２７℃となり、動作保証温度
を２℃超えてしまった。As is clear from Table 1, when the aluminum electrolytic capacitor is housed in a metal case together with the wiring board, even when the heat-generating electronic components are most separated, the heat-generating electronic component temperature is 140 ° C. The temperature of the aluminum electrolytic capacitor was 127 ° C., which exceeded the operation guarantee temperature by 2 ° C.
【００４２】また、アルミニウムケースの厚みを２０ｍ
ｍにした場合において、発熱性電子部品温度が１３６℃
で、アルミニウム電解コンデンサの温度は１２６℃とな
り、動作保証温度を１℃超えてしまった。The thickness of the aluminum case is set to 20 m.
m, the exothermic electronic component temperature is 136 ° C.
Thus, the temperature of the aluminum electrolytic capacitor was 126 ° C., which exceeded the operation guarantee temperature by 1 ° C.
【００４３】また、アルミニウム電解コンデンサを金属
製ケース内に配線基板とともに収納した場合、発熱性電
子部品を最も離間させた場合においても、発熱性電子部
品温度が１３９℃の時、アルミニウム電解コンデンサの
温度は１２６℃となり、作動保証温度を１℃超えてしま
った。Further, when the aluminum electrolytic capacitor is housed in a metal case together with the wiring board, even when the heat-generating electronic component is most separated, when the heat-generating electronic component temperature is 139.degree. Was 126 ° C., which exceeded the operation guarantee temperature by 1 ° C.
【００４４】これに対して、本発明では、発熱性電子部
品の温度が１４７℃以上の場合であっても、アルミニウ
ム電解コンデンサの温度は、１２０℃以下であって、作
動保証温度を５℃以上下回る結果となった。On the other hand, in the present invention, even when the temperature of the heat-generating electronic component is 147 ° C. or more, the temperature of the aluminum electrolytic capacitor is 120 ° C. or less, and the operation guarantee temperature is 5 ° C. or more. The result was below.
【００４５】また、シリコンゲルを充填した場合、充填
しない場合に比較して、発熱性電子部品の放熱性を高め
ることができ、また、蓋体を別体化することにより、電
解コンデンサの温度を低下させることができ、さらに壁
体によって発熱性部品を収納するキャビティと電解コン
デンサを収納するキャビティとを分離することにより、
電解コンデンサの温度上昇を抑制できることがわかっ
た。In addition, when silicon gel is filled, the heat dissipation of the heat-generating electronic component can be improved as compared with the case where silicon gel is not filled, and the temperature of the electrolytic capacitor can be reduced by forming the lid separately. By separating the cavity for storing the heat-generating component and the cavity for storing the electrolytic capacitor by a wall,
It was found that the temperature rise of the electrolytic capacitor could be suppressed.
【００４６】[0046]
【発明の効果】以上詳述した通り、本発明の配線基板モ
ジュールによれば、発熱性電子部品を搭載した配線基板
を放熱性の高い金属製ケース内に収納し、また、熱に弱
い非発熱性電子部品を発熱性電子部品とは独立した断熱
性樹脂製ケース内に収納することにより、発熱性電子部
品から発生した熱が熱に弱い非発熱性電子部品まで伝達
されるのを防止することができ、非発熱性電子部品周囲
における熱の淀みなどの発生を防止し、発熱性電子部品
および非発熱性電子部品の動作の安定性を確保すること
ができる。As described above in detail, according to the wiring board module of the present invention, the wiring board on which the heat-generating electronic components are mounted is housed in a metal case having high heat dissipation, To prevent heat generated from heat-generating electronic components from being transmitted to heat-sensitive non-heat-generating electronic components by housing the heat-generating electronic components in a heat-insulating resin case that is independent of heat-generating electronic components Therefore, it is possible to prevent the generation of heat stagnation around the non-heat-generating electronic component, and to ensure the operation stability of the heat-generating electronic component and the non-heat-generating electronic component.
【図１】本発明の実施の形態における配線基板モジュー
ルの概略断面図である。FIG. 1 is a schematic sectional view of a wiring board module according to an embodiment of the present invention.
【図２】本発明の実施の形態における配線基板モジュー
ルの概略平面図である。FIG. 2 is a schematic plan view of the wiring board module according to the embodiment of the present invention.
【図３】従来の配線基板モジュールの概略断面図であ
る。FIG. 3 is a schematic sectional view of a conventional wiring board module.
Ａ 配線基板モジュール １ 絶縁基板 ２ 配線回路 ３ 配線基板 ４ 発熱性電子部品 ８ 金属製ケース １０ 非発熱性電子部品 １１ 樹脂製ケース １５ａ，１５ｂ 蓋体 １６ 壁体 ａ，ｂ 空間 １７ 放熱フィン １８ 熱伝導性ゲル状樹脂 Reference Signs List A Wiring board module 1 Insulating board 2 Wiring circuit 3 Wiring board 4 Heat-generating electronic component 8 Metal case 10 Non-heat-generating electronic component 11 Resin case 15a, 15b Lid 16 Wall a, b Space 17 Radiation fin 18 Heat conduction Gel-like resin
Claims (6)
つ発熱性電子部品が搭載された配線基板を収納した金属
製ケースと、非発熱性電子部品を収納した樹脂製ケース
とを具備し、前記放熱性ケースと前記樹脂製ケースとが
一体的に結合されており、前記結合部にて前記非発熱性
電子部品と前記配線基板の配線回路とが結線されてなる
ことを特徴とする配線基板モジュール。1. A metal case in which a wiring circuit is formed on a surface of an insulating substrate and in which a heat-generating electronic component is mounted, and a resin case in which a non-heat-generating electronic component is stored. Wherein the heat radiating case and the resin case are integrally connected, and the non-heat-generating electronic component and a wiring circuit of the wiring board are connected at the connection portion. Board module.
した空間と、前記樹脂製ケース内の非発熱性電子部品を
収納した空間とが、壁体によって区切られていることを
特徴とする請求項１記載の配線基板モジュール。2. A space in which the wiring board is accommodated in the metal case and a space in which the non-heat-generating electronic components are accommodated in the resin case are separated by a wall. The wiring board module according to claim 1.
した空間内に、熱伝導性ゲル状樹脂を充填してなること
を特徴とする請求項２記載の配線基板モジュール。3. The wiring board module according to claim 2, wherein a space in which the wiring board is accommodated in the metal case is filled with a thermally conductive gel resin.
ブリッドＩＣ素子、パワートランジスタ、パワー抵抗素
子の群から選ばれる少なくとも１種からなる請求項１ま
たは請求項２記載の配線基板モジュール。4. The wiring board module according to claim 1, wherein the heat-generating electronic component is at least one selected from the group consisting of a power element, a hybrid IC element, a power transistor, and a power resistance element.
サ、発振器のうちの少なくとも１種からなる請求項１ま
たは請求項２記載の配線基板モジュール。5. The wiring board module according to claim 1, wherein said non-heat-generating electronic component comprises at least one of an electrolytic capacitor and an oscillator.
てなる請求項１乃至請求項４のいずれか記載の配線基板
モジュール。6. The wiring board module according to claim 1, wherein a heat radiation fin is joined to said metal case.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP37116498A JP3667130B2 (en) | 1998-12-25 | 1998-12-25 | Wiring board module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP37116498A JP3667130B2 (en) | 1998-12-25 | 1998-12-25 | Wiring board module |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000196010A true JP2000196010A (en) | 2000-07-14 |
| JP3667130B2 JP3667130B2 (en) | 2005-07-06 |
Family
ID=18498255
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP37116498A Expired - Fee Related JP3667130B2 (en) | 1998-12-25 | 1998-12-25 | Wiring board module |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3667130B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6522544B1 (en) | 2000-05-16 | 2003-02-18 | Mitsubishi Denki Kabushiki Kaisha | Power module |
| JP2007049131A (en) * | 2005-08-09 | 2007-02-22 | Semikron Elektronik Gmbh & Co Kg | Power semiconductor module with tub-shaped base body |
| WO2016121382A1 (en) * | 2015-01-29 | 2016-08-04 | 株式会社デンソー | Electric compressor and electronic component |
| DE102008054923B4 (en) | 2008-12-18 | 2018-04-26 | Infineon Technologies Ag | Power semiconductor module with a high capacity capacitor integrated in the housing wall |
-
1998
- 1998-12-25 JP JP37116498A patent/JP3667130B2/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6522544B1 (en) | 2000-05-16 | 2003-02-18 | Mitsubishi Denki Kabushiki Kaisha | Power module |
| US6900986B2 (en) | 2000-05-16 | 2005-05-31 | Mitsubishi Denki Kabushiki Kaisha | Power module |
| JP2007049131A (en) * | 2005-08-09 | 2007-02-22 | Semikron Elektronik Gmbh & Co Kg | Power semiconductor module with tub-shaped base body |
| DE102008054923B4 (en) | 2008-12-18 | 2018-04-26 | Infineon Technologies Ag | Power semiconductor module with a high capacity capacitor integrated in the housing wall |
| WO2016121382A1 (en) * | 2015-01-29 | 2016-08-04 | 株式会社デンソー | Electric compressor and electronic component |
| JP2016142135A (en) * | 2015-01-29 | 2016-08-08 | 株式会社デンソー | Motor compressor and electronic component |
| CN107250537A (en) * | 2015-01-29 | 2017-10-13 | 株式会社电装 | Motor compressor and electronic unit |
| US10626869B2 (en) | 2015-01-29 | 2020-04-21 | Denso Corporation | Electric compressor |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3667130B2 (en) | 2005-07-06 |
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