JP2000190206A - Polishing method and polishing device - Google Patents
Polishing method and polishing deviceInfo
- Publication number
- JP2000190206A JP2000190206A JP36518798A JP36518798A JP2000190206A JP 2000190206 A JP2000190206 A JP 2000190206A JP 36518798 A JP36518798 A JP 36518798A JP 36518798 A JP36518798 A JP 36518798A JP 2000190206 A JP2000190206 A JP 2000190206A
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- abrasive grains
- abrasive
- polisher
- workpiece
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、遊離砥粒を用いて
炭化珪素単結晶などの被加工物の表面を鏡面に研磨加工
する研磨方法及び研磨装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a polishing method and a polishing apparatus for polishing a surface of a workpiece such as a silicon carbide single crystal to a mirror surface using free abrasive grains.
【０００２】[0002]
【従来の技術】遊離砥粒を用いて被加工物を研磨する装
置では、研磨砥粒が劣化するため、砥粒を適宜研磨定盤
に供給することが必須である。多くの場合砥粒は溶液中
に懸濁した状態で用いるため、研磨溶液と共に砥粒が研
磨定盤に供給される。また、自動研磨装置では被加工物
が貼り付け板に貼り付けられて研磨定盤上で回転する場
合が多いので、研磨溶液は被加工物または貼り付け板に
よって研磨定盤上に広げられ、研磨砥粒は研磨定盤上に
一様に供給される。例えば、特開平１０−２９１５９号
公報では、研磨の一種であるラップにおいて研磨溶液の
一種であるラップ液を自動供給する装置の技術が開示さ
れている。特開平１０−２９１５９号公報では、ラップ
液タンク内に設けられたスイッチによってラップ液タン
ク内のラップ液量を検知しポンプで自動的にラップ液を
供給している。本方法は、研磨砥粒がラップ液中に懸濁
しているがために有効であるが、研磨砥粒単体ではそれ
を自動供給してラップすることは難しい。2. Description of the Related Art In an apparatus for polishing a workpiece using free abrasive grains, since the abrasive grains are deteriorated, it is essential to appropriately supply the abrasive grains to a polishing platen. In many cases, since the abrasive grains are used in a state of being suspended in a solution, the abrasive grains are supplied to the polishing platen together with the polishing solution. Also, in an automatic polishing apparatus, a workpiece is often attached to an attachment plate and rotated on a polishing platen. Therefore, the polishing solution is spread on the polishing platen by the workpiece or the attachment plate, and the polishing is performed. The abrasive grains are uniformly supplied on the polishing platen. For example, Japanese Patent Application Laid-Open No. 10-29159 discloses a technique of an apparatus for automatically supplying a lapping liquid, which is a kind of polishing solution, to a lap, which is a kind of polishing. In JP-A-10-29159, the amount of lapping liquid in the lapping liquid tank is detected by a switch provided in the lapping liquid tank, and the lapping liquid is automatically supplied by a pump. This method is effective because the polishing abrasive grains are suspended in the lapping liquid, but it is difficult to automatically supply and wrap the polishing abrasive grains alone.
【０００３】他方、酸化クロム粉末を遊離砥粒として用
いる研磨方法が、特開平７−８０７７０号公報に開示さ
れている。この公報では、研磨定盤の条件を規定し、ラ
ップ液・ポリッシュ液等は用いず酸化クロム粉末のみを
用いて、研磨する方法が示されている。しかし、この方
法では、遊離砥粒の供給機構が示されていないため、自
動研磨することはできず、研磨途中で人手で砥粒を供給
し研磨定盤上でならす手間を避けることが出来ない。ま
た、この方法では研磨定盤周囲の雰囲気については全く
規定していない。On the other hand, a polishing method using chromium oxide powder as free abrasive grains is disclosed in Japanese Patent Application Laid-Open No. 7-80770. This publication discloses a method in which the conditions of a polishing platen are defined, and polishing is performed using only chromium oxide powder without using a lapping liquid or a polishing liquid. However, in this method, since the supply mechanism of the free abrasive grains is not shown, it is not possible to perform automatic polishing, and it is not possible to avoid the trouble of manually supplying the abrasive grains during the polishing and leveling on the polishing platen. . In this method, the atmosphere around the polishing table is not specified at all.
【０００４】乾式研磨技術の別の例としては、Journal
of American Ceramics Society第７５巻、１８９頁（１
９９２年）に、酸化クロム粉末を樹脂で固めて研磨定盤
として用いる技術が開示されている。この技術では、研
磨途中で研磨定盤に酸化クロム粉末を供給する必要はな
いが、研磨によって研磨定盤が不均等に摩耗するので、
研磨定盤の表面を削って平坦に保つ必要がある。Another example of a dry polishing technique is the Journal
of American Ceramics Society Vol. 75, p. 189 (1
992) discloses a technique in which chromium oxide powder is hardened with a resin and used as a polishing platen. In this technique, it is not necessary to supply the chromium oxide powder to the polishing platen during polishing, but since the polishing platen is worn unevenly by polishing,
It is necessary to sharpen the surface of the polishing platen to keep it flat.
【０００５】[0005]
【発明が解決しようとする課題】特開平１０−２９１５
９号公報に開示された従来技術は、研磨砥粒がラップ液
中に分散しているかラップ液に溶けているからポンプを
用いてラップ液を自動供給できるのであって、研磨砥粒
を粉体のまま供給する場合には、ポンプでの自動供給・
液面検知等ができないので、採用できない。そこで、研
磨砥粒を粉体のまま用いる場合には、研磨剤の保持に好
適なラップ材を貼った研磨定盤あるいはポリッシャが貼
られた研磨定盤に人手で研磨砥粒を供給し、研磨定盤上
の研磨砥粒をならし、研磨砥粒を研磨定盤上に均一に保
持させてきた。研磨砥粒は被加工物の研磨により劣化す
るため、自動化手段を持たない場合には、これら一連の
手作業は研磨途中で随時行う必要があり、たいへん手間
がかかるという問題があった。また、研磨の過程で多く
の研磨砥粒は研磨定盤の上からこぼれ落ちて無駄になっ
ていた。一例として、炭化珪素単結晶の基板を鏡面に研
磨する場合をあげると、特開平７−８０７７０号公報に
開示されているように、酸化クロム粉を研磨砥粒として
用い乾式で研磨する方法が有効であるが、研磨の過程で
酸化クロム粉が消耗するため、随時酸化クロム粉を供給
してならす必要があり、これはたいへんな手間であっ
た。さらに、研磨装置に砥粒を供給する際に、被研磨材
料の固い微粉が砥粒に混じり、被研磨材表面に深い傷が
発生することもあった。Problems to be Solved by the Invention Japanese Patent Laid-Open No. 10-2915
According to the prior art disclosed in Japanese Patent Application Publication No. 9-209, the polishing abrasive grains are dispersed in or dissolved in the lapping liquid, so that the lapping liquid can be automatically supplied using a pump. When supplying as is, automatic supply by pump
It cannot be used because it cannot detect the liquid level. Therefore, when the polishing abrasive grains are used as powder, the polishing abrasive grains are manually supplied to a polishing platen on which a lap material suitable for holding the abrasive is stuck or a polishing platen stuck with a polisher. The abrasive grains on the surface plate were leveled, and the abrasive particles were uniformly held on the surface plate. Since the abrasive grains are deteriorated by polishing of the workpiece, if there is no automatic means, these series of manual operations must be performed at any time during the polishing, and there is a problem that it takes much time and effort. In addition, many polishing abrasive grains spilled from the polishing platen during the polishing process and were wasted. As an example, when a silicon carbide single crystal substrate is polished to a mirror surface, a method of dry-polishing using chromium oxide powder as abrasive grains as disclosed in JP-A-7-80770 is effective. However, since the chromium oxide powder is consumed in the polishing process, it was necessary to supply the chromium oxide powder as needed, which was a great deal of trouble. Further, when the abrasive particles are supplied to the polishing apparatus, hard fine powder of the material to be polished is mixed with the abrasive particles, and deep scratches may be generated on the surface of the material to be polished.
【０００６】Journal of American Ceramics Society第
７５巻、１８９頁（１９９２年）で開示された技術で
は、炭化珪素単結晶における研磨レートについての記載
があり、研磨荷重が３ｋｇ／ｃｍ2という大きな荷重で
研磨した結果が示されている。この結果によれば、研磨
レートは研磨面によって異なるものの最高で４０μｍ／
ｈであるが、そもそもこのように大きな荷重において
は、例えば厚さが０．５ｍｍ以下の炭化珪素単結晶の平
板を研磨するとひび割れ等を生じ、工業的な単結晶平板
研磨には使えない。研磨荷重を小さくすると、一般的
に、研磨レートは小さくなる。特開平７−８０７７０号
公報に開示されている方法で荷重を３００ｇ／ｃｍ2に
した炭化珪素単結晶の研磨実験によれば、研磨レート
は、最高でも５００Å／ｈであった。In the technique disclosed in the Journal of American Ceramics Society, Vol. 75, p. 189 (1992), there is a description of a polishing rate for a silicon carbide single crystal, and the polishing load is as large as 3 kg / cm 2. The results are shown. According to this result, the polishing rate varies depending on the polished surface, but is at most 40 μm /
However, under such a large load, when a flat plate of, for example, silicon carbide single crystal having a thickness of 0.5 mm or less is polished, cracks and the like are generated, so that it cannot be used for industrial single crystal flat plate polishing. Generally, when the polishing load is reduced, the polishing rate is reduced. According to a polishing experiment of a silicon carbide single crystal in which the load was set to 300 g / cm 2 by the method disclosed in Japanese Patent Application Laid-Open No. 7-80770, the polishing rate was at most 500 ° / h.
【０００７】一方、Journal of American Ceramics Soc
iety第７５巻、１８９頁（１９９２年）で開示された技
術には記載がないが、この方法あるいは特開平７−８０
７７０号公報に開示されている方法を用いると、研磨盤
が比較的固いので、研磨面のＴＴＶ(Total Thickness V
ariation)は良くなるが、表面の粗さを、ＲＭＳ(RootMe
an Square)値で０．５ｎｍ以下にすることは難しい。On the other hand, the Journal of American Ceramics Soc
No. 75, p. 189 (1992), there is no description, but this method or JP-A-7-80
When the method disclosed in Japanese Patent Application Laid-Open No. 770 is used, the polishing disk is relatively hard, so that the TTV (Total Thickness V)
ariation) is improved, but the surface roughness is reduced by RMS (RootMe
It is difficult to make the (an Square) value 0.5 nm or less.
【０００８】そこで、本発明は、従来人手で行っていた
研磨砥粒の塗布調整作業を自動化する事により、研磨プ
ロセスを効率化すると共に、作業者間のバラツキをなく
し、常時適切な条件で研磨できる装置を提供しようとす
るものである。さらに、本発明の装置を用いることによ
り、研磨の効率を上げ、しかも研磨粗さの品質を向上さ
せる研磨方法を提供しようとするものである。[0008] Therefore, the present invention is to improve the efficiency of the polishing process by automating the coating adjustment of the abrasive grains, which has been conventionally performed manually, to eliminate variations among workers, and to constantly perform polishing under appropriate conditions. It is intended to provide a device capable of doing so. Furthermore, it is an object of the present invention to provide a polishing method that increases the polishing efficiency and improves the quality of polishing roughness by using the apparatus of the present invention.
【０００９】[0009]
【課題を解決するための手段】上述した問題を解決する
ため、鋭意検討した結果、本発明を完成させた。即ち、
本発明は、（１） ポリッシャを貼付した研磨定盤を回
転させるとともに、自動砥粒供給手段から研磨砥粒を前
記ポリッシャ上に供給し、研磨砥粒ならし手段により該
砥粒を前記ポリッシャに一様に分布・保持させながら、
被加工物を前記ポリッシャに押しつけて乾式研磨するこ
とにより、被加工物の研磨表面を鏡面研磨することを特
徴とする研磨方法、（２） 酸素濃度を３０％以上に雰
囲気制御して乾式研磨する（１）記載の研磨方法、
（３） 湿度を５０％以下に雰囲気制御して乾式研磨す
る（１）記載の研磨方法、（４） 研磨温度を４０℃以
上に制御して乾式研磨する（１）記載の研磨方法、
（５） ポリッシャが不織布である（１）記載の研磨方
法、（６） 研磨砥粒が酸化クロム粉末である（１）記
載の研磨方法、（７） 被加工物が炭化珪素単結晶基板
である（１）記載の研磨方法、（８） 少なくとも、回
転機構を有する研磨定盤、該研磨定盤に貼付するポリッ
シャ、研磨砥粒自動供給手段、研磨砥粒ならし手段、及
び荷重付与機構を有する被加工物保持具を備えた乾式研
磨装置であって、前記研磨定盤上に、研磨定盤の回転方
向に対して研磨砥粒自動供給手段、研磨砥粒ならし手
段、被加工物保持具の順に配置してなることを特徴とす
る研磨装置、（９） 前記研磨砥粒ならし手段が、研磨
砥粒をポリッシャ上に一様に分布させる機構と研磨砥粒
をポリッシャに保持させる機構からなる（８）記載の研
磨装置、（１０） 前記研磨砥粒自動供給手段が研磨砥
粒供給速度調整機構を有してなる（８）記載の研磨装
置、（１１） さらに、研磨定盤上からこぼれた研磨砥
粒を回収する手段と、回収した研磨砥粒を前記研磨砥粒
自動供給手段に自動搬送する手段とを設けてなる（８）
記載の研磨装置、（１２） さらに研磨定盤上の余剰研
磨砥粒を除去する手段を設けてなる（１１）記載の研磨
装置、（１３） 前記研磨定盤上の雰囲気制御手段を設
けてなる（８）記載の研磨装置、（１４） 被加工物の
温度制御手段を設けてなる（８）記載の研磨装置、であ
る。Means for Solving the Problems As a result of intensive studies to solve the above-mentioned problems, the present invention has been completed. That is,
The present invention relates to (1) rotating a polishing platen to which a polisher is attached, supplying polishing abrasive grains onto the polisher from automatic abrasive grain supply means, and applying the abrasive grains to the polisher by a polishing abrasive grain leveling means. While maintaining uniform distribution and
A polishing method characterized in that a workpiece is pressed against the polisher and dry-polished, whereby the polished surface of the workpiece is mirror-polished. (2) Dry-polishing by controlling the oxygen concentration to 30% or more in an atmosphere. (1) The polishing method according to the above,
(3) The polishing method according to (1), in which the atmosphere is controlled to a humidity of 50% or less, and dry polishing is performed. (4) The polishing method according to (1), wherein the polishing temperature is controlled to 40 ° C. or more to perform dry polishing.
(5) The polishing method according to (1), wherein the polisher is a nonwoven fabric, (6) the polishing method according to (1), wherein the abrasive grains are chromium oxide powder, (7) the workpiece is a silicon carbide single crystal substrate. (8) At least a polishing platen having a rotating mechanism, a polisher to be attached to the polishing platen, a means for automatically supplying abrasive grains, a means for leveling abrasive grains, and a load applying mechanism A dry-type polishing apparatus provided with a workpiece holder, wherein said abrasive platen is automatically supplied to said polishing platen with respect to a rotation direction of said polishing platen, said polishing abrasive particles are leveled, and said workpiece holder is provided. A polishing apparatus characterized by being arranged in the following order: (9) the polishing abrasive grain smoothing means comprises a mechanism for uniformly distributing the polishing abrasive grains on a polisher and a mechanism for holding the polishing abrasive grains on the polisher. (10) The polishing apparatus according to (8), wherein (8) The polishing apparatus according to (8), wherein the automatic grain supply means has a polishing abrasive grain supply speed adjusting mechanism. (11) Further, means for collecting abrasive grains spilled from the polishing platen, and the collected abrasive grains Means for automatically transferring the grains to the means for automatically supplying abrasive grains (8).
(12) The polishing apparatus according to (11), further comprising means for removing excess abrasive grains on the polishing table, and (13) an atmosphere control means on the polishing table. (14) The polishing apparatus according to (8), further comprising: means for controlling the temperature of the workpiece.
【００１０】[0010]
【発明の実施の形態】本発明の具体的な実施形態を、以
下、図面を用いて説明するが、これに限定されるわけで
はない。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Specific embodiments of the present invention will be described below with reference to the drawings, but are not limited thereto.
【００１１】図１は本発明の一実施態様で、粉体の研磨
砥粒を研磨定盤上に一様に分布させて、被加工物を研磨
する自動乾式研磨装置である。被加工物は、被加工物保
持具、例えば、貼り付け板に貼り付けて、被研磨面を研
磨定盤に押し付ける。１枚の貼り付け板に貼り付ける被
加工物の数は１枚とは限らず２枚以上でも良い。図１で
は、１台の研磨装置に１枚の貼り付け板が使われている
が、１台の研磨装置で２枚以上の貼り付け板を用いても
良い。被加工物は、図１では貼り付け板４の自重および
荷重５の重みで研磨定盤２に押し付けられているが、シ
リンダー等を用いて空気圧・油圧などで押し付けても良
い。尚、押し付け圧力については特に制限するものでは
ないが、１０〜１５００ｇ／ｃｍ2の圧力が好ましい。
何故なら、１０ｇ／ｃｍ2未満では被加工物の研磨効率
が極端に下がり、１５００ｇ／ｃｍ2超では被加工物が
割れる可能性があるからである。研磨定盤が回転するこ
とにより、被研磨面は、研磨砥粒に擦られ、機械的・化
学的作用により鏡面に研磨される。被研磨面が研磨され
るにつれて、研磨砥粒は劣化したり研磨定盤から脱落し
たりするので、研磨定盤上には適宜新しい研磨砥粒を供
給し一様に分布させる必要がある。FIG. 1 shows an embodiment of the present invention, which is an automatic dry polishing apparatus for polishing a workpiece by uniformly dispersing abrasive grains of powder on a polishing platen. The workpiece is attached to a workpiece holder, for example, an attaching plate, and the surface to be polished is pressed against the polishing platen. The number of workpieces to be attached to one attachment plate is not limited to one and may be two or more. In FIG. 1, one polishing plate is used for one polishing device, but two or more bonding plates may be used for one polishing device. In FIG. 1, the workpiece is pressed against the polishing platen 2 by the weight of the attachment plate 4 and the weight of the load 5, but may be pressed by air pressure or hydraulic pressure using a cylinder or the like. The pressing pressure is not particularly limited, but a pressure of 10 to 1500 g / cm 2 is preferable.
This is because if it is less than 10 g / cm 2 , the polishing efficiency of the workpiece is extremely reduced, and if it exceeds 1500 g / cm 2 , the workpiece may be cracked. As the polishing platen rotates, the surface to be polished is rubbed by abrasive grains, and is polished to a mirror surface by mechanical and chemical actions. As the surface to be polished is polished, the abrasive grains deteriorate or fall off the polishing platen. Therefore, it is necessary to appropriately supply new abrasive grains on the polishing platen and distribute them uniformly.
【００１２】図１で粉体の研磨砥粒は、砥粒蓄積槽１の
中に蓄えられ、下端の細い開口部を介して連続的にドー
ナツ状の研磨定盤２に供給される。研磨砥粒の研磨定盤
２への供給は必ずしも連続的である必要はなく、間欠的
でも良い。ここで、研磨定盤２は上面が平坦なドーナツ
状であるが、上面が平坦な円盤状の研磨定盤を用いても
良い。図１で、研磨定盤を時計回りに回転させるとその
内周より外周のほうが周速が早いため、貼り付け板も自
然に時計回りに回転するが、強制的に貼り付け板を回転
させても良い。貼り付け板の回転に伴い、被加工物の被
研磨面も相対的に研磨定盤上を移動することになり、被
研磨面は研磨定盤上に分布した研磨砥粒にまんべん無く
擦られ、研磨される。In FIG. 1, powdery abrasive grains are stored in an abrasive grain storage tank 1 and are continuously supplied to a donut-shaped polishing platen 2 through a narrow opening at the lower end. The supply of the abrasive grains to the polishing platen 2 need not always be continuous, but may be intermittent. Here, the polishing platen 2 has a donut shape with a flat top surface, but a disk-shaped polishing platen with a flat top surface may be used. In FIG. 1, when the polishing platen is rotated clockwise, the peripheral speed is faster at the outer periphery than at the inner periphery. Therefore, the pasting plate naturally rotates clockwise, but the pasting plate is forcibly rotated. Is also good. With the rotation of the attaching plate, the surface to be polished of the workpiece also moves relatively on the polishing platen, and the polished surface rubs evenly with the abrasive grains distributed on the polishing platen. And polished.
【００１３】砥粒蓄積槽１の下端の開口部は、研磨定盤
の内側は狭く、外側は広くなっており、研磨定盤２に落
ちた研磨砥粒は定盤上でほぼ一様の厚みに分布するが、
研磨定盤の回転に伴い、レベラー３によって研磨砥粒は
研磨定盤上で一様にならされ、５０ｇ／ｃｍ2以上の圧
力で押し付けられる。押し付ける圧力が小さすぎるとポ
リッシャの砥粒の保持が十分でなくなる。研磨砥粒の供
給が間欠的な場合は、研磨砥粒が供給された時に研磨砥
粒をならせば十分であり、常時レベラー３によって研磨
砥粒をならす必要はない。従って、レベラー３には研磨
定盤２の上から退避できる機能を持たせても良い。The opening at the lower end of the abrasive grain storage tank 1 is narrow inside the polishing platen and wide outside the polishing platen, and the abrasive grains dropped on the polishing platen 2 have a substantially uniform thickness on the platen. , But
With the rotation of the polishing platen, the abrasive grains are made uniform on the polishing platen by the leveler 3 and pressed at a pressure of 50 g / cm 2 or more. If the pressing pressure is too small, the polisher will not hold the abrasive grains sufficiently. When the supply of the abrasive grains is intermittent, it is sufficient to form the abrasive grains when the abrasive grains are supplied, and it is not necessary to constantly level the abrasive grains with the leveler 3. Therefore, the leveler 3 may have a function of retracting from above the polishing platen 2.
【００１４】研磨定盤２にはポリッシャが貼られている
ので、研磨砥粒はポリッシャの空隙に保持されて、被加
工物の被研磨面に擦りつけられる。ポリッシャとして
は、一般的に、合成樹脂、皮革、布などが用いられる。
研磨砥粒がポリッシャの空隙に保持されるということ
は、研磨砥粒が研磨定盤の上に潤沢に存在して被加工物
に擦りつけられることを意味するので、被加工物は効率
的に研磨される。ポリッシャとしての不織布は、研磨砥
粒の保持がよく、しかも細かな傷の発生が少ないので、
好適に使用される。Since a polisher is attached to the polishing platen 2, the abrasive grains are held in the gaps of the polisher and rub against the surface to be polished of the workpiece. Generally, synthetic resin, leather, cloth, and the like are used as the polisher.
The fact that the abrasive grains are held in the gaps of the polisher means that the abrasive grains are present abundantly on the polishing platen and are rubbed against the workpiece. Polished. The non-woven fabric as a polisher has good retention of abrasive grains, and there are few occurrences of fine scratches.
It is preferably used.
【００１５】砥粒蓄積槽は、図１に限定されるものでは
なく、研磨定盤の内側が狭く外側が広くなっていないも
のも使用できる。図２は、図１とは別の実施形態で、研
磨装置の中の研磨砥粒供給部分の部分図であるが、砥粒
貯留槽１３は下端が多数の小径孔で構成された単純な円
形開口部であるため、砥粒は研磨定盤２の一部に局在し
て供給される。供給された砥粒は、研磨定盤２の上に設
置された拡散板１４によって、研磨定盤２上に一様に拡
散されると共に余分な砥粒は研磨定盤２の上から除去さ
れる。研磨定盤２上に一様に拡散された研磨粉は、研磨
定盤２の回転によって、ローラー１５の下に運ばれる。
ローラー１５は、研磨定盤２上で砥粒をならすと同時に
砥粒を研磨定盤２に押し付け、ポリッシャに砥粒を保持
させる。尚、レベラー３、拡散板１４およびローラー１
５は、材料を特に限定しないが、磨耗しにくく、被加工
物と反応しないものが好適である。また、研磨砥粒の粒
径は、大きすぎると被加工物の表面粗さが悪くなり鏡面
にならないので、細かい方が望ましい。好適な粒径は３
μｍ以下である。The abrasive grain storage tank is not limited to that shown in FIG. 1, and a polishing platen having a narrow inside and a wide outside can be used. FIG. 2 is a partial view of a polishing abrasive supply portion in a polishing apparatus in another embodiment different from FIG. 1. The abrasive storage tank 13 has a simple circular shape having a large number of small-diameter holes at the lower end. Because of the opening, the abrasive grains are locally supplied to a part of the polishing platen 2. The supplied abrasive grains are uniformly diffused on the polishing platen 2 by the diffusion plate 14 installed on the polishing platen 2 and excess abrasive particles are removed from the polishing platen 2. . The polishing powder uniformly diffused on the polishing platen 2 is carried below the rollers 15 by the rotation of the polishing platen 2.
The roller 15 smoothes the abrasive grains on the polishing platen 2 and at the same time presses the abrasive grains against the polishing platen 2 to cause the polisher to hold the abrasive grains. The leveler 3, the diffusion plate 14, and the roller 1
5 is not particularly limited in material, but is preferably a material that is not easily worn and does not react with the workpiece. If the particle size of the abrasive grains is too large, the surface roughness of the workpiece is deteriorated and the surface is not mirror-finished. Preferred particle size is 3
μm or less.
【００１６】砥粒蓄積槽には、研磨定盤への研磨砥粒の
供給速度を調節する機構が設けられている。図３は、砥
粒蓄積槽１の断面図であり、邪魔板１６が内部に設けら
れている。図３中の矢印のように邪魔板１６の角度を変
える事により砥粒蓄積槽１内での研磨砥粒の降下速度を
調節し、研磨定盤への研磨砥粒供給速度を調節できるよ
うになっている。研磨砥粒供給速度の調節機構として
は、邪魔板を設けなくても良く、砥粒蓄積槽内部あるい
は下端開口部に絞りを入れて砥粒降下速度を調節しても
よい。砥粒降下が滞る場合は、それを解消する手段を設
けてもよい。また、研磨定盤への研磨砥粒の供給は必ず
しも連続的である必要はない。The abrasive grain accumulating tank is provided with a mechanism for adjusting the supply speed of the abrasive grains to the polishing platen. FIG. 3 is a cross-sectional view of the abrasive grain storage tank 1, in which a baffle plate 16 is provided. By changing the angle of the baffle plate 16 as shown by the arrow in FIG. 3, the descending speed of the abrasive grains in the abrasive grain accumulating tank 1 is adjusted, and the supply rate of the abrasive grains to the polishing platen can be adjusted. Has become. As a mechanism for adjusting the polishing abrasive grain supply speed, a baffle plate may not be provided, and the abrasive grain descending speed may be adjusted by squeezing the inside of the abrasive grain accumulation tank or the opening at the lower end. If the drop of the abrasive grains is delayed, a means for eliminating the drop may be provided. In addition, the supply of the polishing abrasive grains to the polishing table need not always be continuous.
【００１７】図１に例示するように、研磨定盤の上には
研磨砥粒自動供給手段、研磨砥粒ならし手段、被加工物
保持具を配置するが、研磨定盤の回転方向に対して、研
磨砥粒自動供給手段、研磨砥粒ならし手段、被加工物保
持具の順に配置させる。これは、研磨砥粒自動供給手段
によって研磨定盤上に供給された研磨砥粒が、先ず、研
磨砥粒ならし手段によってポリッシャ上に一様に押し付
けられてならされて保持され、しかる後に被加工物がな
らされた研磨砥粒で研磨され、被研磨面が一様に研磨さ
れる構成を保つためである。As illustrated in FIG. 1, automatic polishing abrasive grain supply means, abrasive grain leveling means, and a workpiece holder are arranged on the polishing platen. Then, the abrasive grain automatic supply means, the abrasive grain leveling means, and the workpiece holder are arranged in this order. This is because the abrasive grains supplied on the polishing platen by the automatic abrasive grain supply means are first uniformly pressed and polished on the polisher by the abrasive grain smoothing means, and then held. This is because the workpiece is polished with the polished abrasive grains so that the surface to be polished is uniformly polished.
【００１８】砥粒蓄積槽から研磨定盤へ供給された研磨
砥粒の内、研磨定盤上均一に分布して研磨布に保持され
る以外の余剰な砥粒は、研磨定盤から除去される。即
ち、図１では、レベラー３によって余分な砥粒は研磨定
盤２の上から排除され、外周及び内周の隙間から研磨装
置内下方へと落ちていく。また、図３では、拡散板１４
によって余分な砥粒は研磨定盤２の上から排除され、外
周及び内周の隙間から研磨装置内下方へと落ちていく。Of the abrasive grains supplied from the abrasive grain accumulation tank to the polishing platen, surplus abrasive grains other than those uniformly distributed on the polishing table and held by the polishing cloth are removed from the polishing platen. You. That is, in FIG. 1, excess abrasive grains are removed from above the polishing platen 2 by the leveler 3 and fall down from the gap between the outer circumference and the inner circumference to below the polishing apparatus. Also, in FIG.
As a result, excess abrasive grains are removed from above the polishing platen 2 and fall from the gap between the outer circumference and the inner circumference to below the polishing apparatus.
【００１９】研磨定盤２から排除された余分な研磨砥粒
は、回収され、再度自動的に研磨定盤に供給される。即
ち、図１では、研磨装置内下方へと落ちた余剰砥粒は、
研磨装置下部に置かれた受け皿６で受けられ、ベルトコ
ンベア７によって砥粒蓄積槽１の上まで持ち上げられ、
再度、砥粒蓄積槽１の中に蓄えられる。そして、砥粒蓄
積槽１から研磨定盤へと供給される。ベルトコンベア７
の代りに、バケットで砥粒蓄積槽１の上まで持ち上げて
も良いし、エア搬送などの手段を用いても良く、その手
段を限定するものではない。The surplus abrasive grains removed from the polishing table 2 are collected and automatically supplied to the polishing table again. That is, in FIG. 1, surplus abrasive grains that have fallen downward in the polishing apparatus are:
It is received by a tray 6 placed under the polishing apparatus, and is lifted by the belt conveyor 7 to above the abrasive grain storage tank 1.
Again, it is stored in the abrasive storage tank 1. And, it is supplied from the abrasive grain storage tank 1 to the polishing platen. Belt conveyor 7
Instead of this, the bucket may be lifted up to the top of the abrasive grain storage tank 1, or a means such as air conveyance may be used, and the means is not limited.
【００２０】本装置では、研磨定盤周囲の湿度や酸素濃
度等の雰囲気を制御し、被加工材近傍の雰囲気を調節す
る機構を設けている。また、雰囲気等の温度を制御する
事により、被加工材の温度も制御している。The present apparatus is provided with a mechanism for controlling the atmosphere such as humidity and oxygen concentration around the polishing table and adjusting the atmosphere near the workpiece. The temperature of the workpiece is also controlled by controlling the temperature of the atmosphere and the like.
【００２１】次に、本装置を用いた研磨方法について説
明する。Next, a polishing method using the present apparatus will be described.
【００２２】本装置は種々の材料を乾式研磨するのに好
適に用いられるが、なかでも、炭化珪素単結晶基板の研
磨に適している。研磨砥粒としては、種々の研磨剤が用
いられるが、炭化珪素の研磨には酸化クロム粉が好適で
ある。特に、炭化珪素単結晶基板の仕上げ研磨には、平
均粒度０．１〜２μｍの酸化クロム粉を研磨砥粒として
用い、雰囲気を乾燥した酸化雰囲気に保つ事が有効であ
る。図１に示すように、研磨定盤の周囲は透明なカバー
８で覆い、内部の酸素濃度及び／又は湿度を調節する。
雰囲気ガスの出側１１に設置した酸素濃度・湿度計で酸
素濃度と湿度を測定し、酸素濃度３０％未満及び／又は
相対湿度計５０％超になると、酸素導入口９に設置した
電磁弁１０を開いて乾燥酸素を研磨定盤周囲に導入す
る。この雰囲気制御を常時働かせておくことにより、炭
化珪素単結晶基板の研磨中、常に、研磨定盤周囲の雰囲
気を酸素濃度３０％以上及び／又は相対湿度計５０％以
下に保てる。ここで、酸素濃度を上げる作用は、炭化珪
素が雰囲気ガス中の酸素で酸化されて研磨を促進する事
にある。また、湿度を下げる作用は、研磨砥粒が湿って
凝集するのを防ぐ点にある。尚、乾燥酸素に代えて乾燥
空気を導入し、湿度を下げるだけでもその作用は認めら
れる。湿度の作用はまた、研磨砥粒と被加工物の摩擦
を、回転むらが出ないように好適に保持することにあ
る。この作用は、表面の粗さの向上に現れる。また、透
明なカバー８で研磨定盤を覆う代りに、研磨装置全体や
設置する部屋の酸素濃度と相対湿度を制御しても良い。The present apparatus is suitably used for dry polishing various materials, but is particularly suitable for polishing a silicon carbide single crystal substrate. Various abrasives are used as abrasive grains, but chromium oxide powder is suitable for polishing silicon carbide. In particular, for final polishing of a silicon carbide single crystal substrate, it is effective to use chromium oxide powder having an average particle size of 0.1 to 2 μm as polishing abrasive grains and keep the atmosphere in a dry oxidizing atmosphere. As shown in FIG. 1, the periphery of the polishing platen is covered with a transparent cover 8 to adjust the oxygen concentration and / or humidity inside.
The oxygen concentration and the humidity are measured by an oxygen concentration / humidity meter installed on the outlet side 11 of the atmosphere gas. When the oxygen concentration is less than 30% and / or the relative humidity is more than 50%, the solenoid valve 10 installed in the oxygen inlet 9 is measured. Is opened and dry oxygen is introduced around the polishing platen. By constantly operating this atmosphere control, the atmosphere around the polishing platen can always be maintained at an oxygen concentration of 30% or more and / or a relative humidity meter of 50% or less during polishing of the silicon carbide single crystal substrate. Here, the effect of increasing the oxygen concentration is that silicon carbide is oxidized by oxygen in the atmospheric gas to promote polishing. The function of lowering the humidity is to prevent the abrasive grains from being wet and agglomerated. In addition, the effect is recognized only by reducing the humidity by introducing dry air instead of dry oxygen. The function of the humidity is also to appropriately maintain the friction between the abrasive grains and the workpiece so as not to cause uneven rotation. This effect appears in the improvement of the surface roughness. Instead of covering the polishing platen with the transparent cover 8, the oxygen concentration and the relative humidity of the entire polishing apparatus or the room where the polishing apparatus is installed may be controlled.
【００２３】被加工物の温度は、高い方が望ましい。温
度が高い方が研磨レートが大きくなり、貼り付け板の回
転もスムースになる。これは、機械的研磨作用に加え
て、化学的研磨作用が促進される為と考えられる。温度
は、雰囲気の温度を制御しても良いし、研磨盤あるいは
被加工物を保持するホルダーの温度を制御しても良い。
温度は４０℃以上でその作用が大きい。It is desirable that the temperature of the workpiece be high. The higher the temperature, the higher the polishing rate and the smoother the rotation of the attachment plate. This is probably because the chemical polishing action is promoted in addition to the mechanical polishing action. As the temperature, the temperature of the atmosphere may be controlled, or the temperature of the polishing disk or the holder for holding the workpiece may be controlled.
The effect is great at temperatures above 40 ° C.
【００２４】[0024]
【実施例】さらに、本発明について実施例で詳細に説明
する。EXAMPLES Further, the present invention will be described in detail with reference to Examples.
【００２５】直径２インチの炭化珪素単結晶基板を酸化
クロム粉で研磨した。研磨前の基板の表面粗さをＡＦＭ
(Atomic Force Microscope)で評価した所、１０μｍ角
の測定領域でＲＭＳ値が１．２ｎｍであった。A silicon carbide single crystal substrate having a diameter of 2 inches was polished with chromium oxide powder. AFM for surface roughness of substrate before polishing
When evaluated with an (Atomic Force Microscope), the RMS value was 1.2 nm in a 10 μm square measurement region.
【００２６】研磨定盤としてアルミナを用い、酸化クロ
ム粉を手動で随時供給しながら研磨する従来の方法で
は、８時間でＲＭＳ値が１．０ｎｍまで改善されたもの
の、それ以上は研磨を続けても改善されなかった。In the conventional method in which alumina is used as a polishing platen and polishing is performed while chromium oxide powder is supplied manually as needed, the RMS value is improved to 1.0 nm in 8 hours, but the polishing is continued after that. Also did not improve.
【００２７】図１に示す自動研磨装置を用いポリッシャ
として合成樹脂製の研磨布を使って雰囲気調整はせずに
酸化クロム粉で研磨した。加重３００ｇ／ｃｍ2、定盤
周速１．２ｍ／ｓの条件では研磨レートが５００Å／ｈ
となり、当初１．２ｎｍであったＲＭＳ値は０．８ｎｍ
にまで改善されて、しかも自動化によって研磨時間は３
割短縮することができた。しかし、この場合も、それ以
上は研磨を続けても改善されなかった。Using an automatic polishing apparatus shown in FIG. 1, a polishing cloth made of synthetic resin was used as a polisher and polished with chromium oxide powder without adjusting the atmosphere. Under the conditions of a load of 300 g / cm 2 and a peripheral speed of the platen of 1.2 m / s, the polishing rate is 500 ° / h.
The RMS value which was initially 1.2 nm is 0.8 nm
And the polishing time is 3
It was able to be shortened comparatively. However, even in this case, even if the polishing was further continued, no improvement was obtained.
【００２８】さらに、図１の自動研磨装置を用いて、雰
囲気調整をして、相対湿度５０％以下、酸素濃度３０％
以上、温度を４０℃以上にして研磨したところ、ＲＭＳ
値は０．５ｎｍにまで改善された。Further, the atmosphere was adjusted using the automatic polishing apparatus shown in FIG. 1 so that the relative humidity was 50% or less and the oxygen concentration was 30%.
As described above, when the polishing was performed at a temperature of 40 ° C. or higher, the RMS
The value improved to 0.5 nm.
【００２９】ポリッシャとして不織布を使い、その他の
条件は上記と同様にして、図１の自動研磨装置で研磨し
た。雰囲気調整に加えて不織布を用いた効果が出て、研
磨時間はアルミナ盤を用いた場合の半分で済んだ。不織
布を用いることにより、砥粒の保持が容易であることの
みならず、平均の粗さがＲＭＳ値で０．３〜０．５ｎｍ
になった。A non-woven fabric was used as a polisher, and the other conditions were the same as those described above, and polishing was performed by the automatic polishing apparatus shown in FIG. The effect of using the nonwoven fabric was obtained in addition to the adjustment of the atmosphere, and the polishing time was half that of the case of using the alumina disk. By using the nonwoven fabric, not only is it easy to hold the abrasive grains, but the average roughness is 0.3 to 0.5 nm in RMS value.
Became.
【００３０】雰囲気制御では、酸素濃度を高めることに
より、空気を用いた場合の研磨レートを１．２〜１．４
倍に高めることができた。湿度を５０％以下に制御する
と、湿度８０％の空気を用いた場合の１．１〜１．２倍
に研磨レートを上げることができた。かつ、研磨表面の
粗さについては、湿度８０％の雰囲気で研磨した時はＲ
ＭＳ値が０．８ｎｍで、場所による粗さの変化が認めら
れたが、湿度５０％の雰囲気では、貼り付け板の回転の
むらが少なくなり、場所による変化も認められず、表面
粗さが、０．５ｎｍ以下になった。被加工物の温度が４
０℃から６０℃に上がると、貼り付け板の回転むらが少
なくなり、ノマルスキー干渉顕微鏡観察による表面粗さ
の均一性が良くなった。In the atmosphere control, the polishing rate in the case of using air is increased by 1.2 to 1.4 by increasing the oxygen concentration.
It could be doubled. When the humidity was controlled to 50% or less, the polishing rate could be increased to 1.1 to 1.2 times that when air having a humidity of 80% was used. Also, regarding the roughness of the polished surface, when polished in an atmosphere of 80% humidity,
Although the MS value was 0.8 nm and the roughness changed depending on the place, in the atmosphere of 50% humidity, the unevenness of rotation of the attaching plate was reduced, and the change due to the place was not recognized. It became 0.5 nm or less. Workpiece temperature is 4
When the temperature was raised from 0 ° C. to 60 ° C., the rotation unevenness of the attached plate was reduced, and the uniformity of the surface roughness by Nomarski interference microscope observation was improved.
【００３１】[0031]
【発明の効果】本発明の研磨装置によって、貼り付け板
に貼り付けた被加工物を研磨装置にセットしてから被加
工物表面を鏡面に研磨し終わるまで、人手を介すること
なく自動的に研磨砥粒粉体を研磨定盤に供給し続けて表
面をならし砥粒を研磨布に一様に保持させることができ
るようになったため、作業能率が格段に向上した。According to the polishing apparatus of the present invention, the work piece pasted on the pasting plate is set in the polishing apparatus, and automatically after the work piece surface is polished to a mirror surface without any manual operation. Since the polishing abrasive powder can be continuously supplied to the polishing platen to smooth the surface and the abrasive grains can be uniformly held on the polishing cloth, the work efficiency is remarkably improved.
【００３２】また、本発明の研磨方法によって、研磨レ
ートが上がるとともに、鏡面研磨後の粗さが格段に改善
された。Further, the polishing method of the present invention increased the polishing rate and significantly improved the roughness after mirror polishing.
【図１】 本発明の一実施形態を示す斜視図である。FIG. 1 is a perspective view showing an embodiment of the present invention.
【図２】 本発明の図１と別の一実施形態を示す、研磨
砥粒を研磨定盤に供給する部分の斜視図である。FIG. 2 is a perspective view of a part for supplying polishing abrasive grains to a polishing platen, showing another embodiment different from FIG. 1 of the present invention.
【図３】 本発明の一実施形態で、図１における砥粒蓄
積槽１内部の断面模式図である。FIG. 3 is a schematic cross-sectional view of the inside of the abrasive grain storage tank 1 in FIG. 1 in one embodiment of the present invention.
１…砥粒蓄積槽 ２…研磨定盤 ３…レベラー ４…貼り付け板 ５…荷重 ６…受け皿 ７…ベルトコンベア ８…透明カバー ９…酸素導入口 １０…電磁弁 １１…雰囲気ガス出側 １２…酸素濃度・湿度計 １３…砥粒貯留槽 １４…拡散板 １５…ローラー １６…邪魔板 DESCRIPTION OF SYMBOLS 1 ... Abrasive grain storage tank 2 ... Polishing platen 3 ... Leveler 4 ... Sticking plate 5 ... Load 6 ... Receiving tray 7 ... Belt conveyor 8 ... Transparent cover 9 ... Oxygen inlet 10 ... Solenoid valve 11 ... Atmospheric gas outlet 12 ... Oxygen concentration / humidity meter 13 ... Abrasive storage tank 14 ... Diffusion plate 15 ... Roller 16 ... Baffle plate
───────────────────────────────────────────────────── フロントページの続き (72)発明者 大谷 昇 川崎市中原区井田３−35−１ 新日本製鐵 株式会社技術開発本部内 (72)発明者 勝野 正和 川崎市中原区井田３−35−１ 新日本製鐵 株式会社技術開発本部内 (72)発明者 藍郷 崇 川崎市中原区井田３−35−１ 新日本製鐵 株式会社技術開発本部内 Ｆターム(参考） 3C058 AA07 AA09 AC01 AC04 BA08 BA09 BC03 CB01 CB03 CB10 DA02 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Noboru 3-35-1, Ida, Nakahara-ku, Kawasaki-shi Nippon Steel Corporation Technology Development Division (72) Inventor Masakazu Katsuno 3-35-, Ida, Nakahara-ku, Kawasaki-shi 1 Nippon Steel Corporation Technology Development Division (72) Inventor Takashi Aigo 3-35-1 Ida, Nakahara-ku, Kawasaki City Nippon Steel Corporation Technology Development Division F-term (reference) 3C058 AA07 AA09 AC01 AC04 BA08 BA09 BC03 CB01 CB03 CB10 DA02
Claims (14)
せるとともに、自動砥粒供給手段から研磨砥粒を前記ポ
リッシャ上に供給し、研磨砥粒ならし手段により該砥粒
を前記ポリッシャに一様に分布・保持させながら、被加
工物を前記ポリッシャに押しつけて乾式研磨することに
より、被加工物の研磨表面を鏡面研磨することを特徴と
する研磨方法。1. A polishing platen to which a polisher has been attached is rotated, and polishing abrasive grains are supplied onto the polisher from an automatic abrasive grain supply means, and the abrasive grains are uniformly applied to the polisher by a polishing abrasive grain smoothing means. A polishing method characterized in that a workpiece is pressed against the polisher and dry-polished while being distributed and held on the workpiece, thereby mirror-polishing the polished surface of the workpiece.
乾式研磨する請求項１記載の研磨方法。2. The polishing method according to claim 1, wherein the dry polishing is performed while controlling the atmosphere to an oxygen concentration of 30% or more.
研磨する請求項１記載の研磨方法。3. The polishing method according to claim 1, wherein the dry polishing is performed by controlling the atmosphere to a humidity of 50% or less.
磨する請求項１記載の研磨方法。4. The polishing method according to claim 1, wherein the dry polishing is performed by controlling the polishing temperature to 40 ° C. or higher.
の研磨方法。5. The polishing method according to claim 1, wherein the polisher is a non-woven fabric.
１記載の研磨方法。6. The polishing method according to claim 1, wherein the abrasive grains are chromium oxide powder.
求項１記載の研磨方法。7. The polishing method according to claim 1, wherein the workpiece is a silicon carbide single crystal substrate.
盤、該研磨定盤に貼付するポリッシャ、研磨砥粒自動供
給手段、研磨砥粒ならし手段、及び荷重付与機構を有す
る被加工物保持具を備えた乾式研磨装置であって、前記
研磨定盤上に、研磨定盤の回転方向に対して研磨砥粒自
動供給手段、研磨砥粒ならし手段、被加工物保持具の順
に配置してなることを特徴とする研磨装置。8. A workpiece holding device having at least a polishing platen having a rotating mechanism, a polisher to be attached to the polishing platen, automatic abrasive grain supply means, abrasive grain leveling means, and a load applying mechanism. A dry-type polishing apparatus comprising: a polishing-polishing plate, on the polishing platen, a polishing-grain automatic supply unit, a polishing-grain-leveling unit, and a workpiece holder in the order of rotation of the polishing platen. A polishing apparatus characterized in that:
ポリッシャ上に一様に分布させる機構と研磨砥粒をポリ
ッシャに保持させる機構からなる請求項８記載の研磨装
置。9. The polishing apparatus according to claim 8, wherein said polishing abrasive grain smoothing means comprises a mechanism for uniformly distributing the polishing abrasive grains on the polisher and a mechanism for holding the polishing abrasive grains on the polisher.
供給速度調整機構を有してなる請求項８記載の研磨装
置。10. The polishing apparatus according to claim 8, wherein said automatic polishing abrasive grain supply means has a polishing abrasive grain supply speed adjusting mechanism.
砥粒を回収する手段と、回収した研磨砥粒を前記研磨砥
粒自動供給手段に自動搬送する手段とを設けてなる請求
項８記載の研磨装置。11. The apparatus according to claim 8, further comprising means for collecting abrasive grains spilled from the polishing platen, and means for automatically transporting the collected abrasive grains to the automatic abrasive grain supply means. Polishing equipment.
去する手段を設けてなる請求項１１記載の研磨装置。12. The polishing apparatus according to claim 11, further comprising means for removing surplus abrasive grains on the polishing platen.
けてなる請求項８記載の研磨装置。13. The polishing apparatus according to claim 8, further comprising atmosphere control means on said polishing platen.
請求項８記載の研磨装置。14. The polishing apparatus according to claim 8, further comprising means for controlling the temperature of the workpiece.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP36518798A JP2000190206A (en) | 1998-12-22 | 1998-12-22 | Polishing method and polishing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP36518798A JP2000190206A (en) | 1998-12-22 | 1998-12-22 | Polishing method and polishing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000190206A true JP2000190206A (en) | 2000-07-11 |
Family
ID=18483649
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP36518798A Pending JP2000190206A (en) | 1998-12-22 | 1998-12-22 | Polishing method and polishing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000190206A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007533141A (en) * | 2004-04-08 | 2007-11-15 | トゥー‐シックス・インコーポレイテッド | Chemical mechanical polishing of SiC surfaces using hydrogen peroxide or ozonated aqueous solution in combination with colloidal abrasive |
| CN112809494A (en) * | 2021-01-29 | 2021-05-18 | 抚州市晟邦科技有限公司 | Automatic production detection system and method for grinding and polishing machine |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0298927A (en) * | 1988-10-06 | 1990-04-11 | Shin Etsu Handotai Co Ltd | Polishing apparatus |
| JPH0780770A (en) * | 1993-09-14 | 1995-03-28 | Nippon Steel Corp | Mechanochemica polishing method of silicon carbide single crystal |
| JPH07314302A (en) * | 1994-05-23 | 1995-12-05 | Sumitomo Electric Ind Ltd | Polishing method of hard wafer and device thereof |
| JPH09155727A (en) * | 1995-12-12 | 1997-06-17 | Fujitsu Ltd | Polishing device |
| JPH09201761A (en) * | 1996-01-29 | 1997-08-05 | Noritake Co Ltd | Polishing process method of compound material |
| JPH1029159A (en) * | 1996-07-12 | 1998-02-03 | Japan Aviation Electron Ind Ltd | Lapping machine with lapping liquid automatic supplying device |
-
1998
- 1998-12-22 JP JP36518798A patent/JP2000190206A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0298927A (en) * | 1988-10-06 | 1990-04-11 | Shin Etsu Handotai Co Ltd | Polishing apparatus |
| JPH0780770A (en) * | 1993-09-14 | 1995-03-28 | Nippon Steel Corp | Mechanochemica polishing method of silicon carbide single crystal |
| JPH07314302A (en) * | 1994-05-23 | 1995-12-05 | Sumitomo Electric Ind Ltd | Polishing method of hard wafer and device thereof |
| JPH09155727A (en) * | 1995-12-12 | 1997-06-17 | Fujitsu Ltd | Polishing device |
| JPH09201761A (en) * | 1996-01-29 | 1997-08-05 | Noritake Co Ltd | Polishing process method of compound material |
| JPH1029159A (en) * | 1996-07-12 | 1998-02-03 | Japan Aviation Electron Ind Ltd | Lapping machine with lapping liquid automatic supplying device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007533141A (en) * | 2004-04-08 | 2007-11-15 | トゥー‐シックス・インコーポレイテッド | Chemical mechanical polishing of SiC surfaces using hydrogen peroxide or ozonated aqueous solution in combination with colloidal abrasive |
| CN112809494A (en) * | 2021-01-29 | 2021-05-18 | 抚州市晟邦科技有限公司 | Automatic production detection system and method for grinding and polishing machine |
| CN112809494B (en) * | 2021-01-29 | 2022-07-26 | 抚州市晟邦科技有限公司 | Automatic production detection system and method for grinding and polishing machine |
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