JP2000174347A - Optical semiconductor device - Google Patents

Optical semiconductor device

Info

Publication number
JP2000174347A
JP2000174347A JP10346771A JP34677198A JP2000174347A JP 2000174347 A JP2000174347 A JP 2000174347A JP 10346771 A JP10346771 A JP 10346771A JP 34677198 A JP34677198 A JP 34677198A JP 2000174347 A JP2000174347 A JP 2000174347A
Authority
JP
Japan
Prior art keywords
optical semiconductor
die
package
lead electrodes
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10346771A
Other languages
Japanese (ja)
Other versions
JP3667125B2 (en
Inventor
Hiroaki Tamemoto
広昭 為本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Chemical Industries Ltd
Original Assignee
Nichia Chemical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Chemical Industries Ltd filed Critical Nichia Chemical Industries Ltd
Priority to JP34677198A priority Critical patent/JP3667125B2/en
Publication of JP2000174347A publication Critical patent/JP2000174347A/en
Application granted granted Critical
Publication of JP3667125B2 publication Critical patent/JP3667125B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93Batch processes
    • H01L24/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

PROBLEM TO BE SOLVED: To protect photoelectric characteristics by connecting the inside and the outside of a recess in a package member electrically through a pair of lead electrodes, connecting the pair of lead electrodes electrically with an optical semiconductor element and then covering a mold sealing member in the recess arranged with the optical semiconductor element with a protective member. SOLUTION: After metal pieces 6, 7 which serve as lead electrodes, are arranged in a die, liquid crystal polymer is injected and insert molded, and then it is cooled to form a package member 1. An LED die 2 is then die-bonded onto the lead electrodes 6, 7 in the package member 1, utilizing silver paste and each electrode of the die bonded optical semiconductor element and the lead electrodes 6, 7 are die-bonded, utilizing a gold wire 3. Subsequently, epoxy resin is injected as a translucent mold member 4 for protecting the LED die 2 and the gold wire 3, and a filmy protective member 5 of polyethylene resin is press molded onto the package member 1, before the epoxy resin is completely cured.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、パッケージ内に配
置した光半導体素子を樹脂で封止してなる光半導体装置
に係わり、特に、光半導体素子の電気光学的特性を維持
しつつ、信頼性を更に向上させうる光半導体装置に関す
るものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical semiconductor device in which an optical semiconductor element arranged in a package is sealed with a resin, and more particularly, to an optical semiconductor device having high reliability while maintaining electro-optical characteristics of the optical semiconductor element. The present invention relates to an optical semiconductor device that can further improve the optical semiconductor device.

【0002】[0002]

【従来の技術】今日、低消費電力で高輝度に発光し、小
型、且つ軽量な発光素子や受光素子として、種々の分野
で光半導体素子を利用した光半導体装置が利用され始め
ている。このような光半導体装置の一例として、発光ダ
イオードを図4に示す。図4には、セラミックや液晶ポ
リマーなどの樹脂で形成されたパッケージ41の凹部内
に光半導体素子であるLEDダイ42をダイボンドさせ
てある。パッケージに設けられたリード電極46、47
はパッケージの凹部内及びパッケージ外部に露出してお
り、パッケージ内に配置させたLEDダイの電極とパッ
ケージに設けられたリード電極とを金線43によるワイ
ヤボンディングや銀ペーストなどを利用して外部から電
流を供給できるように電気的に接続してある。また、L
EDダイ、リード電極や金線などを外部から保護する目
的でLEDダイが配置されたパッケージ凹部内にモール
ド封止部材44を形成させてある。
2. Description of the Related Art Today, optical semiconductor devices using optical semiconductor elements have begun to be used in various fields as small and lightweight light emitting elements and light receiving elements which emit light with low power consumption and high luminance. FIG. 4 shows a light-emitting diode as an example of such an optical semiconductor device. In FIG. 4, an LED die 42 as an optical semiconductor element is die-bonded in a concave portion of a package 41 formed of a resin such as a ceramic or a liquid crystal polymer. Lead electrodes 46 and 47 provided on the package
Is exposed inside the concave portion of the package and outside the package, and the electrodes of the LED die arranged in the package and the lead electrodes provided on the package are externally connected to each other by wire bonding using a gold wire 43 or silver paste. They are electrically connected so that current can be supplied. Also, L
For the purpose of protecting the ED die, the lead electrode, the gold wire, and the like from the outside, a mold sealing member 44 is formed in a package recess in which the LED die is arranged.

【0003】モールド封止部材は光半導体素子であるL
EDダイからの光を効率よく透過できると共に駆動時や
発光ダイオードを半田づけなどによりモールド封止部材
の熱膨張等でLEDダイやワイヤボンディング部が損傷
しないような樹脂を選択する必要がある。そのため、モ
ールド封止部材に、エポキシ、シリコーン、あるいは変
性アクリル樹脂等を使用する。これにより、光半導体素
子の特性を損なうことなく取り扱いの容易な光半導体装
置とすることができる。
The mold sealing member is an optical semiconductor element L
It is necessary to select a resin that can efficiently transmit light from the ED die and that does not damage the LED die or the wire bonding part due to thermal expansion of the mold sealing member during driving or soldering of the light emitting diode. Therefore, epoxy, silicone, modified acrylic resin, or the like is used for the mold sealing member. This makes it possible to provide an optical semiconductor device that can be easily handled without deteriorating the characteristics of the optical semiconductor element.

【0004】[0004]

【発明が解決しようとする課題】しかしながら、光半導
体装置の使用環境の広がりから、特殊な使用環境によっ
ては光半導体装置の光や電気特性が低下する傾向にあ
る。場合によっては駆動しなくなる場合があり、上記構
成の光半導体装置では十分ではなく、更なる改良が求め
られる。特に、有機溶剤、硫化硫黄や酸素の濃度が高い
種々のガスを利用する工場等の特殊環境下において、そ
の傾向が強い。従って、本発明は上記問題に鑑み、特殊
環境下においても光電気特性を損なうことなく信頼性の
高い光半導体装置を提供することにある。
However, due to the expansion of the use environment of the optical semiconductor device, the optical and electrical characteristics of the optical semiconductor device tend to decrease depending on the special use environment. In some cases, the optical semiconductor device may not be driven, and the optical semiconductor device having the above configuration is not sufficient, and further improvement is required. In particular, the tendency is strong under a special environment such as a factory using various gases having a high concentration of an organic solvent, sulfur sulfide or oxygen. SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a highly reliable optical semiconductor device without deteriorating photoelectric characteristics even in a special environment.

【0005】[0005]

【課題を解決するための手段】本発明は表面に凹部を有
するパッケージ部材と、パッケージ部材の凹部内と外部
とを電気的に接続させる少なくとも一対のリード電極
と、一対のリード電極とそれぞれ電気的に接続された光
半導体素子と、光半導体素子が配置された凹部内のモー
ルド封止部材と、モールド封止部材を被覆する保護部材
とを有する光半導体装置である。特に、保護部材のガス
透過率が、モールド封止部材のガス透過率よりも小さい
光半導体装置である。
SUMMARY OF THE INVENTION The present invention provides a package member having a concave portion on the surface, at least one pair of lead electrodes for electrically connecting the inside and the outside of the concave portion of the package member, and a pair of lead electrodes each electrically connected to the outside. The optical semiconductor device includes an optical semiconductor element connected to the optical semiconductor element, a mold sealing member in a concave portion in which the optical semiconductor element is arranged, and a protection member that covers the mold sealing member. In particular, it is an optical semiconductor device in which the gas permeability of the protection member is smaller than the gas permeability of the mold sealing member.

【0006】これにより、光半導体素子の電気光学的特
性を損なうことなく、光半導体素子やリード電極などを
変質等させる不要なガスの浸入を防ぐことができる。ま
た、請求項2に記載の光半導体装置は、保護部材がモー
ルド封止部材によって接着されたフィルム状形状であ
る。これにより、より不要なガスの浸入を抑制すると共
にモールド封止部材の量を安定させ光学的特性が安定し
た光半導体装置を量産性よく形成させることができる。
Accordingly, it is possible to prevent the invasion of unnecessary gas that deteriorates the optical semiconductor element and the lead electrode without deteriorating the electro-optical characteristics of the optical semiconductor element. The optical semiconductor device according to the second aspect has a film-like shape in which the protective member is bonded by a mold sealing member. Accordingly, it is possible to suppress the invasion of unnecessary gas and stabilize the amount of the mold sealing member, thereby forming an optical semiconductor device having stable optical characteristics with high productivity.

【0007】[0007]

【発明の実施の形態】本発明者は、種々の実験の結果、
保護部材とモールド封止部材とを機能分離させ特定の関
係とすることにより、使用環境を問わず信頼性を飛躍的
に向上しうることを見出し、発明を成すに至った。本発
明の構成による信頼性向上は定かではないが、工場など
特殊環境下における光半導体装置の特性劣化が特殊雰囲
気での光半導体装置内部への不要なガスの浸入にあると
考えられる。即ち、光半導体装置はその特性ゆえに光半
導体素子の光特性が十分発揮できる樹脂によりモールド
する必要がある。また、その使用時等において機械的に
光半導体素子等が損傷しないようなモールド封止部材を
選択する必要がある。
BEST MODE FOR CARRYING OUT THE INVENTION The inventor of the present invention
The inventors have found that the reliability can be significantly improved irrespective of the use environment by separating the functions of the protective member and the mold sealing member so as to have a specific relationship, and have completed the invention. Although the reliability improvement by the configuration of the present invention is not clear, it is considered that the characteristic deterioration of the optical semiconductor device in a special environment such as a factory is caused by intrusion of unnecessary gas into the optical semiconductor device in a special atmosphere. That is, the optical semiconductor device needs to be molded with a resin capable of sufficiently exhibiting the optical characteristics of the optical semiconductor element because of its characteristics. In addition, it is necessary to select a mold sealing member that does not mechanically damage the optical semiconductor element or the like during its use.

【0008】このようなモールド封止部材は、分子間の
結合が弱いまたは分子間距離が長い構造のものが多い。
そのためにガス透過率が高く、硫化硫黄や酸素等のガス
が光半導体装置を構成する光半導体素子の電極、金線等
から成るワイヤを硫化、酸化等によって変質させる。ま
た、光半導体素子によっては表面を溶かしてしまい、光
半導体装置の劣化を早めると考えられる。本発明は光半
導体素子を保護するモールド封止部材と、パッケージ凹
部内へのガスの浸入を防ぐ保護部材とを機能分離して形
成させることにより信頼性を向上させ得るものである。
以下、本発明の具体的実施例について詳述するがこれの
みに限られないことはいうまでもない。 (実施例1)図1は本発明の一実施例によるLED素子
の模式的断面図である。また図2は、同じく本発明の一
実施例によるLED素子の斜視図であるが、図1はその
A−A線断面図でもある。以下、このような光半導体装
置の一例としてLED素子の形成を述べる。
[0008] Such a mold sealing member often has a structure in which bonding between molecules is weak or the distance between molecules is long.
Therefore, gas permeability is high, and a gas such as sulfur sulfide or oxygen alters a wire made of an electrode, a gold wire or the like of an optical semiconductor element constituting the optical semiconductor device by sulfuration, oxidation, or the like. In addition, it is considered that the surface of some optical semiconductor elements is melted to accelerate the deterioration of the optical semiconductor device. According to the present invention, the reliability can be improved by forming the mold sealing member for protecting the optical semiconductor element and the protection member for preventing gas from entering into the concave portion of the package by separating the functions.
Hereinafter, specific examples of the present invention will be described in detail, but needless to say, the present invention is not limited thereto. Embodiment 1 FIG. 1 is a schematic sectional view of an LED device according to one embodiment of the present invention. FIG. 2 is a perspective view of an LED element according to an embodiment of the present invention, and FIG. 1 is also a cross-sectional view taken along line AA. Hereinafter, formation of an LED element will be described as an example of such an optical semiconductor device.

【0009】まず、金型内にリード電極となる金属片
6、7を配置させた後、液晶ポリマーを注入させインサ
ート成形させる。冷却後、金型から取り出すことにより
パッケージ部材1を形成させた。この段階では、平面上
に複数の開口部を有するパッケージとなっている。形成
されたパッケージ部材は、略中央に開口部が設けられて
おり、開口部底面上とパッケージ部材の側面から裏面に
かけてリード電極が露出していた。このようなパッケー
ジ部材の材料としては、絶縁性に優れ、外力に対して比
較強く容易に形成できる材料を利用することが望まし
い。パッケージ部材の具体的材料として、セラミクス、
液晶ポリマー、PBT樹脂等の材料を利用することがこ
のましい。パッケージ部材には、光半導体素子の特性に
より着色顔料を混合させ所望の色に着色させることもで
きる。また、パッケージ内に光半導体素子として発光素
子であるLEDダイを1つ以上設けることができるし、
発光素子と受光素子とを同時に配置させることもでき
る。
First, after metal pieces 6 and 7 serving as lead electrodes are arranged in a mold, a liquid crystal polymer is injected and insert-molded. After cooling, the package member 1 was formed by taking it out of the mold. At this stage, the package has a plurality of openings on a plane. The formed package member had an opening substantially at the center, and the lead electrodes were exposed from the bottom surface of the opening and from the side surface to the back surface of the package member. As a material for such a package member, it is desirable to use a material which is excellent in insulating properties and which can be easily formed relatively strong against external force. Ceramics, as specific materials for package members
It is preferable to use a material such as a liquid crystal polymer or a PBT resin. The package member may be mixed with a coloring pigment depending on the characteristics of the optical semiconductor element to be colored in a desired color. Also, one or more LED dies, which are light emitting elements, can be provided as optical semiconductor elements in the package,
The light emitting element and the light receiving element can be arranged at the same time.

【0010】リード電極6、7としては、凹部内に配置
された光半導体素子にパッケージ外部と電気的に接続さ
せるものであるため、電気伝導性に優れたものが好まし
い。リード電極の具体的材料としては、ニッケル等のメ
タライズあるいはリン青銅等の電機良導体を挙げること
ができる。また、このような材料の表面に銀あるいは金
等の平滑なメッキが施され、電極部材であるとともにL
EDダイからの光を効率よく外部に放出させるようにそ
の表面を光反射部材として利用することもできる。
Since the lead electrodes 6 and 7 are to be electrically connected to the outside of the package to the optical semiconductor element disposed in the recess, those having excellent electric conductivity are preferable. As a specific material of the lead electrode, a metallized metal such as nickel or a good electrical conductor such as phosphor bronze can be used. Further, the surface of such a material is plated with silver or gold or the like, and is used as an electrode member.
The surface can be used as a light reflecting member so that the light from the ED die is efficiently emitted to the outside.

【0011】形成されたパッケージ内部のリード電極上
に銀ペーストを利用してLEDダイ2をダイボンドさせ
る。LEDダイが一対の電極を介して半導体層が形成さ
れている場合は、ダイボンドと共に電気的に接続させる
ことができる。このような光半導体素子は所望に応じて
種々のものを利用することができる。具体的には、紫外
線や可視光の長波長域が発光可能なLEDダイとして、
サファイア基板上に窒化物半導体が形成された発光素
子、可視光の長波長域から赤外線が発光可能なガリウム
砒素基板上に形成させたアルミニウム・ガリウム・イン
ジウム隣やシリコンを利用した受光素子などが挙げられ
る。
An LED die 2 is die-bonded on a lead electrode inside the formed package by using a silver paste. When the LED die has a semiconductor layer formed through a pair of electrodes, the LED die can be electrically connected together with the die bond. Various types of such optical semiconductor elements can be used as desired. Specifically, as an LED die capable of emitting a long wavelength region of ultraviolet light or visible light,
Light emitting devices with nitride semiconductors formed on a sapphire substrate, next to aluminum, gallium and indium formed on a gallium arsenide substrate capable of emitting infrared light from the long wavelength region of visible light, and light receiving devices using silicon Can be

【0012】ダイボンドされた光半導体素子の各電極と
リード電極6、7とを電気良導体なる金線3を利用して
ワイヤボンディングさせる。これにより光半導体素子と
リード電極とを電気的に接続させる。電気良導体は金線
の他アルミニウム線などを利用することができる。次
に、LEDダイや電気良導体を保護させるため透光性の
モールド部材4としてエポキシ樹脂を注入させた。モー
ルド部材となる樹脂は光半導体素子を保護し、絶縁性が
高く且つ透光性を有することが求められる。具体的には
自身の熱変形によりワイヤボンディング部が破断しない
よう、硬度がJIS A硬度の20からショアD硬度の
80程度までの比較的柔軟な樹脂が好ましい。モールド
部材としてより具体的には、エポキシ系、シリコーン
系、あるいは変性アクリル系等よりなる透光性封止樹脂
が好ましい。モールド部材には所望に応じて光半導体素
子からの光や光半導体素子への光を所望に応じてカット
する着色剤や光を拡散させる拡散材、さらには所望の光
に変換させる蛍光物質を好適に含有させることもでき
る。なお、上述のエポキシ樹脂を120℃3時間で硬化
させフィルム状のモールド部材を形成させた。これを2
3℃において差圧気体透過度試験法により透過率を測定
したところ約6500cc/m2・24hrs・atm
であった。
Each electrode of the die-bonded optical semiconductor element and the lead electrodes 6 and 7 are wire-bonded using the gold wire 3 which is a good conductor. Thus, the optical semiconductor element and the lead electrode are electrically connected. As the electric good conductor, an aluminum wire or the like other than the gold wire can be used. Next, epoxy resin was injected as a translucent mold member 4 to protect the LED die and the electric conductor. It is required that the resin serving as the mold member protects the optical semiconductor element, has high insulating properties, and has a light transmitting property. Specifically, a relatively soft resin having a hardness of from JIS A hardness of 20 to Shore D hardness of about 80 is preferable so that the wire bonding portion is not broken by its own thermal deformation. More specifically, as the mold member, a translucent sealing resin made of an epoxy-based, silicone-based, or modified acrylic-based resin is preferable. The mold member is preferably made of a coloring agent that cuts light from the optical semiconductor element or light to the optical semiconductor element as desired, a diffusing material that diffuses light, and a fluorescent substance that converts light into desired light. Can also be contained. The above-mentioned epoxy resin was cured at 120 ° C. for 3 hours to form a film-shaped mold member. This is 2
When the transmittance was measured at 3 ° C. by a differential pressure gas permeability test method, it was about 6500 cc / m 2 · 24 hrs · atm.
Met.

【0013】次に、エポキシ樹脂が完全に硬化するる前
に120℃に加熱した板を用い、ホットスタンピング法
として厚さ約100μmのポリエチレン樹脂のフィルム
状保護部材5をLEDダイが配置された複数の開口を有
するパッケージ上に加圧させることにより形成させた。
モールド封止部材4はまだ柔軟な状態なので、フィルム
状保護部材5を接着しやすかった。なお、上記ポリエチ
レン樹脂を差圧気体透過度試験を行ったところ約198
cc/m2・24hrs・atmであった。
Next, using a plate heated to 120 ° C. before the epoxy resin is completely cured, a polyethylene resin film-like protection member 5 having a thickness of about 100 μm is formed by a hot stamping method on a plurality of LED die. The package was formed by pressing on a package having an opening.
Since the mold sealing member 4 was still in a flexible state, it was easy to adhere the film-shaped protection member 5. When the above polyethylene resin was subjected to a differential pressure gas permeability test, about 198
cc / m 2 · 24 hrs · atm.

【0014】本発明の特徴となる保護部材はモールド部
材よりもガス透過率の低いものを利用している。保護部
材自体はLEDダイなどを被覆して機械的に保護する必
要はないが、外力に対して比較的硬度の高いショアD8
0以上ものが好ましい。特に、保護部材は熱膨張や熱収
縮によりLEDダイそのものを直接破壊するものではな
いためガスが透過しにくい比較的緻密な樹脂が好適に挙
げられる。具体的には不飽和ポリエステル、ポリエチレ
ン、ポリメチルペンテン、フッ素樹脂等が挙げられる。
特に、ガス透過率が1000cc/m2・24hrs・
atm以下であることが好ましい。より好ましくは30
0cc/m2・24hrs・atm以下である。また、
保護部材をフィルム状に形成させる場合は約10〜15
0μm程度の厚さにすることが好ましい。これにより、
硬質のフィルム状保護部材であっても、モールド封止部
材の変形に対しても剥離したり、割れたりすることなく
追従し得ることができる。また、保護部材形成時の温
度、溶媒、材質などの諸条件によってガス透過率を制御
することもできる。
The protective member which is a feature of the present invention uses a member having a lower gas permeability than the molded member. The protection member itself does not need to cover the LED die or the like to protect it mechanically, but the Shore D8 has relatively high hardness against external force.
It is preferably 0 or more. In particular, since the protective member does not directly destroy the LED die itself due to thermal expansion or thermal contraction, a relatively dense resin that does not easily allow gas to permeate is preferably used. Specific examples include unsaturated polyester, polyethylene, polymethylpentene, fluororesin and the like.
In particular, the gas permeability is 1000 cc / m 2 · 24 hrs ·
Atm or less is preferable. More preferably 30
0 cc / m 2 · 24 hrs · atm or less. Also,
About 10 to 15 when the protective member is formed in a film shape
Preferably, the thickness is about 0 μm. This allows
Even a hard film-shaped protective member can follow the deformation of the mold sealing member without peeling or cracking. Further, the gas permeability can be controlled by various conditions such as temperature, solvent, and material when forming the protective member.

【0015】また、図3は本発明の一実施例によるLE
D素子のパッケージ部材を切断する前の模式的断面図で
あるが、31、32のように、各開口部近傍には後に各
LED素子に分割しやすいように溝を切ってある。この
溝は加圧により余分なモールド部材が流れ込みモールド
部材の厚みを一定とさせる効果もある。溝に沿って保護
部材ごとパッケージ部材を切断してLED素子を形成さ
せた。 (比較例1)保護部材を用いず120℃3時間でモール
ド部材を硬化させた以外は実施例1と同様にして光半導
体装置である発光ダイオードを形成させた。形成された
LED素子は共にほとんど同じ発光輝度を示した。
FIG. 3 shows an LE according to an embodiment of the present invention.
FIG. 3 is a schematic cross-sectional view before cutting a package element of a D element, but grooves 31 and 32 are formed in the vicinity of each opening so as to be easily divided into LED elements later. This groove also has the effect of making the thickness of the mold member constant by allowing the excess mold member to flow by pressure. The package member was cut together with the protective member along the groove to form an LED element. (Comparative Example 1) A light emitting diode as an optical semiconductor device was formed in the same manner as in Example 1 except that the mold member was cured at 120 ° C for 3 hours without using a protective member. The formed LED elements showed almost the same light emission luminance.

【0016】比較例1のLED素子と実施例1のLED
素子を共に700個づつ硫化ガス中に500時間晒し
た。試験前後のLED素子光出力変化を測定したとこ
ろ、従来のLED素子では試験前に比べ試験後は平均3
4%も光出力が低下したのに対し、本発明によるLED
素子では試験前に比べ試験後は約7%しか光出力は低下
しなかった。試験後の出力が大きく低下したLED素子
を分解して調べたところ、ワイヤやLEDダイの電極が
硫化されており黒色に変質して劣化が進んでおり、本発
明によるLED素子が比較例1のLED素子に対して極
めて信頼性に優れたものであることが確認された。
The LED device of Comparative Example 1 and the LED of Example 1
Each of the devices was exposed to a sulfide gas in 700 pieces for 500 hours. When the light output change of the LED element before and after the test was measured, the conventional LED element had an average of 3 after the test compared to before the test.
4% decrease in light output, whereas LED according to the present invention
The light output of the device was reduced by only about 7% after the test as compared to before the test. When the LED element whose output after the test was greatly reduced was disassembled and examined, the wire and the electrode of the LED die were sulfided, changed to black and deteriorated, and the LED element according to the present invention was compared with Comparative Example 1. It was confirmed that the LED element was extremely excellent in reliability.

【0017】また、実施例1のLED素子と比較例1の
LED素子とを共に超硬合金よりなるマウンタノズルを
使用して、マウンタで10回LED素子吸着から搭載を
繰り返したところ、比較例1のLED素子では素子表面
のノズル当接部に深さ10μm程度の傷が多数見られた
のに対し、実施例1によるLED素子では表面傷は全く
観察されず、本発明によるLED素子が従来のLED素
子に対して極めて傷付きにも強いものであることも確認
された。
The mounting of the LED element of Example 1 and the LED element of Comparative Example 1 using a mounter nozzle made of cemented carbide was repeated 10 times with the mounter using the mounter nozzle. In the LED element of Example 1, many scratches with a depth of about 10 μm were found at the nozzle contact portion on the element surface, whereas no surface damage was observed in the LED element according to Example 1, and the LED element according to the present invention was a conventional LED element. It was also confirmed that the LED element was extremely resistant to damage.

【0018】[0018]

【発明の効果】上記のように、光半導体素子を被覆する
モールド部材と、モールド部材に被覆されるLEDダイ
などを損傷させるガスの浸入を防ぐ保護部材とを機能分
離して設けることにより光電気特性を損傷することな
く、極めて信頼性に優れたLED素子を得ることができ
る。
As described above, by providing the mold member for covering the optical semiconductor element and the protective member for preventing the intrusion of gas which damages the LED die and the like covered with the mold member, the photoelectric member is provided with a photoelectric function. An extremely reliable LED element can be obtained without damaging the characteristics.

【0019】また、本発明の光半導体装置は、フィルム
状の保護部材をホットスタンピングすることで樹脂の凹
凸面をなくして平坦にし光学特性を安定化させると同時
に、モールド部材の量を一定にすることもできる。
In the optical semiconductor device of the present invention, the film-shaped protective member is hot-stamped to eliminate the uneven surface of the resin to flatten the optical characteristics and stabilize the optical characteristics, and at the same time, to keep the amount of the mold member constant. You can also.

【図面の簡単な説明】[Brief description of the drawings]

【図1】 図1は本発明の一実施例による、LED素子
の模式的断面図を示す。また、図2のA−A線断面を示
す。
FIG. 1 is a schematic cross-sectional view of an LED device according to one embodiment of the present invention. 2 shows a cross section taken along line AA of FIG. 2.

【図2】 図2は本発明の一実施例による、LED素子
の斜視図を示す。
FIG. 2 shows a perspective view of an LED device according to one embodiment of the present invention.

【図3】 図3は本発明の一実施例による、パッケージ
部材を切断する前のLED素子の模式的断面図を示す。
FIG. 3 is a schematic cross-sectional view of an LED device before cutting a package member according to an embodiment of the present invention.

【図4】 図4は本発明と比較のために示すLED素子
の模式的断面図を示す。
FIG. 4 is a schematic sectional view of an LED element shown for comparison with the present invention.

【符号の説明】[Explanation of symbols]

1・・・パッケージ部材 2・・・LEDダイ 3・・・ワイヤ 4・・・モールド封止部材 5・・・フィルム状保護部材 6、7・・・電極部材 31、32・・・溝部分 33・・・モールド封止部材 41・・・パッケージ部材 42・・・LEDダイ 43・・・ワイヤ 44・・・モールド封止部材 46、47・・・電極部材 DESCRIPTION OF SYMBOLS 1 ... Package member 2 ... LED die 3 ... Wire 4 ... Mold sealing member 5 ... Film-shaped protective member 6, 7 ... Electrode member 31, 32 ... Groove part 33 ... Mold sealing member 41 ... Package member 42 ... LED die 43 ... Wire 44 ... Mould sealing member 46, 47 ... Electrode member

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 表面に凹部を有するパッケージ部材と、
該パッケージ部材の凹部内と外部とを電気的に接続させ
る少なくとも一対のリード電極と、該一対のリード電極
とそれぞれ電気的に接続された光半導体素子と、該光半
導体素子が配置された凹部内のモールド封止部材と、該
モールド封止部材を被覆する保護部材とを有する光半導
体装置であって、前記保護部材を構成する樹脂のガス透
過率が、前記モールド封止部材を構成する樹脂のガス透
過率よりも小さいことを特徴とする光半導体装置。
A package member having a concave portion on the surface;
At least a pair of lead electrodes for electrically connecting the inside of the concave portion of the package member to the outside, an optical semiconductor element electrically connected to the pair of lead electrodes, and a concave portion in which the optical semiconductor element is arranged. An optical semiconductor device comprising: a mold sealing member; and a protective member that covers the mold sealing member, wherein the gas permeability of the resin that forms the protective member is less than the gas permeability of the resin that forms the mold sealing member. An optical semiconductor device, wherein the optical semiconductor device has a smaller gas permeability.
【請求項2】 前記保護部材はモールド封止部材によっ
て接着されたフィルムである請求項1に記載の光半導体
装置。
2. The optical semiconductor device according to claim 1, wherein said protective member is a film bonded by a mold sealing member.
JP34677198A 1998-12-07 1998-12-07 Optical semiconductor device and manufacturing method thereof Expired - Lifetime JP3667125B2 (en)

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