JP2000174347A - Optical semiconductor device - Google Patents

Optical semiconductor device

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Publication number
JP2000174347A
JP2000174347A JP10346771A JP34677198A JP2000174347A JP 2000174347 A JP2000174347 A JP 2000174347A JP 10346771 A JP10346771 A JP 10346771A JP 34677198 A JP34677198 A JP 34677198A JP 2000174347 A JP2000174347 A JP 2000174347A
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Prior art keywords
member
optical semiconductor
die
lead electrodes
package
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JP10346771A
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JP3667125B2 (en
Inventor
Hiroaki Tamemoto
広昭 為本
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Nichia Chem Ind Ltd
日亜化学工業株式会社
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Priority to JP34677198A priority Critical patent/JP3667125B2/en
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Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93Batch processes
    • H01L24/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched

Abstract

PROBLEM TO BE SOLVED: To protect photoelectric characteristics by connecting the inside and the outside of a recess in a package member electrically through a pair of lead electrodes, connecting the pair of lead electrodes electrically with an optical semiconductor element and then covering a mold sealing member in the recess arranged with the optical semiconductor element with a protective member.
SOLUTION: After metal pieces 6, 7 which serve as lead electrodes, are arranged in a die, liquid crystal polymer is injected and insert molded, and then it is cooled to form a package member 1. An LED die 2 is then die-bonded onto the lead electrodes 6, 7 in the package member 1, utilizing silver paste and each electrode of the die bonded optical semiconductor element and the lead electrodes 6, 7 are die-bonded, utilizing a gold wire 3. Subsequently, epoxy resin is injected as a translucent mold member 4 for protecting the LED die 2 and the gold wire 3, and a filmy protective member 5 of polyethylene resin is press molded onto the package member 1, before the epoxy resin is completely cured.
COPYRIGHT: (C)2000,JPO

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【発明の属する技術分野】本発明は、パッケージ内に配置した光半導体素子を樹脂で封止してなる光半導体装置に係わり、特に、光半導体素子の電気光学的特性を維持しつつ、信頼性を更に向上させうる光半導体装置に関するものである。 The present invention relates to the relates to an optical semiconductor element disposed in the package in an optical semiconductor device obtained by encapsulating with a resin, in particular, while maintaining the electro-optical properties of the optical semiconductor element, reliability to an optical semiconductor device which can further improve.

【0002】 [0002]

【従来の技術】今日、低消費電力で高輝度に発光し、小型、且つ軽量な発光素子や受光素子として、種々の分野で光半導体素子を利用した光半導体装置が利用され始めている。 Nowadays, it emits light at a high luminance with low power consumption, small size, as and lightweight light emitting element and the light receiving element, an optical semiconductor device has begun to be used which utilizes an optical semiconductor device in various fields. このような光半導体装置の一例として、発光ダイオードを図4に示す。 An example of such an optical semiconductor device, a light emitting diode in FIG. 図4には、セラミックや液晶ポリマーなどの樹脂で形成されたパッケージ41の凹部内に光半導体素子であるLEDダイ42をダイボンドさせてある。 FIG 4, are allowed to die bonding an LED die 42 is an optical semiconductor element on a ceramic or the recess of the package 41 formed of a resin such as a liquid crystal polymer. パッケージに設けられたリード電極46、47 Lead electrodes 46 and 47 provided in the package
はパッケージの凹部内及びパッケージ外部に露出しており、パッケージ内に配置させたLEDダイの電極とパッケージに設けられたリード電極とを金線43によるワイヤボンディングや銀ペーストなどを利用して外部から電流を供給できるように電気的に接続してある。 Is exposed to the recess and the package outside of the package, a lead electrode provided on the LED die electrode and the package is placed in the package from the outside by using a wire bonding or a silver paste by a gold wire 43 current are electrically connected so that it can supply. また、L In addition, L
EDダイ、リード電極や金線などを外部から保護する目的でLEDダイが配置されたパッケージ凹部内にモールド封止部材44を形成させてある。 ED die, they are allowed to form a molded sealing member 44 in a package within a recess LED die is arranged for the purpose of protecting such an external lead electrodes and gold wires.

【0003】モールド封止部材は光半導体素子であるL [0003] mold sealing member is an optical semiconductor element L
EDダイからの光を効率よく透過できると共に駆動時や発光ダイオードを半田づけなどによりモールド封止部材の熱膨張等でLEDダイやワイヤボンディング部が損傷しないような樹脂を選択する必要がある。 The driving time or a light emitting diode with efficiently transmit light from ED die LED die and wire bonding portion in thermal expansion of the mold sealing members due soldering it is necessary to select a resin that does not damage. そのため、モールド封止部材に、エポキシ、シリコーン、あるいは変性アクリル樹脂等を使用する。 Therefore, use in mold sealing member, epoxy, silicone, or a modified acrylic resin and the like. これにより、光半導体素子の特性を損なうことなく取り扱いの容易な光半導体装置とすることができる。 This makes it possible to easily optical semiconductor device handling without impairing the characteristics of the optical semiconductor element.

【0004】 [0004]

【発明が解決しようとする課題】しかしながら、光半導体装置の使用環境の広がりから、特殊な使用環境によっては光半導体装置の光や電気特性が低下する傾向にある。 [SUMMARY OF THE INVENTION However, the spread of the use environment of the optical semiconductor device, there is a tendency that the optical and electrical characteristics of the optical semiconductor device is lowered by a special environment. 場合によっては駆動しなくなる場合があり、上記構成の光半導体装置では十分ではなく、更なる改良が求められる。 Sometimes may no longer driven, it is not sufficient for the optical semiconductor device configured as described above, further improvement is required. 特に、有機溶剤、硫化硫黄や酸素の濃度が高い種々のガスを利用する工場等の特殊環境下において、その傾向が強い。 In particular, an organic solvent, in special environments such as factories that utilize high various gas concentrations of sulfide sulfur and oxygen, this tendency is strong. 従って、本発明は上記問題に鑑み、特殊環境下においても光電気特性を損なうことなく信頼性の高い光半導体装置を提供することにある。 Accordingly, the present invention has been made in view of the above problems and to provide a high light reliable semiconductor device without deteriorating the photoelectric characteristics even in special environments.

【0005】 [0005]

【課題を解決するための手段】本発明は表面に凹部を有するパッケージ部材と、パッケージ部材の凹部内と外部とを電気的に接続させる少なくとも一対のリード電極と、一対のリード電極とそれぞれ電気的に接続された光半導体素子と、光半導体素子が配置された凹部内のモールド封止部材と、モールド封止部材を被覆する保護部材とを有する光半導体装置である。 The present invention SUMMARY OF] is a package member having a recess on the surface, at least a pair of lead electrodes electrically connecting the recess and the outside of the package member, each electrical and pair of lead electrodes an optical semiconductor element connected to an optical semiconductor device having a molded sealing member in the recess of the optical semiconductor elements are arranged, and a protective member for covering the mold sealing member. 特に、保護部材のガス透過率が、モールド封止部材のガス透過率よりも小さい光半導体装置である。 In particular, the gas permeability of the protective member, a small optical semiconductor device than the gas permeability of the mold sealing members.

【0006】これにより、光半導体素子の電気光学的特性を損なうことなく、光半導体素子やリード電極などを変質等させる不要なガスの浸入を防ぐことができる。 [0006] Thus, without compromising the electro-optical properties of the optical semiconductor element, such as an optical semiconductor element and the lead electrodes can be prevented intrusion of unnecessary gas to deterioration or the like. また、請求項2に記載の光半導体装置は、保護部材がモールド封止部材によって接着されたフィルム状形状である。 Further, the optical semiconductor device according to claim 2, the protective member is a film shape is adhered by the mold sealing member. これにより、より不要なガスの浸入を抑制すると共にモールド封止部材の量を安定させ光学的特性が安定した光半導体装置を量産性よく形成させることができる。 Thus, to stabilize the amount of mold sealing member suppresses the entry of more undesired gases optical properties can be formed with good mass productivity and stable optical semiconductor device.

【0007】 [0007]

【発明の実施の形態】本発明者は、種々の実験の結果、 DETAILED DESCRIPTION OF THE INVENTION The present inventors have, as a result of various experiments,
保護部材とモールド封止部材とを機能分離させ特定の関係とすることにより、使用環境を問わず信頼性を飛躍的に向上しうることを見出し、発明を成すに至った。 With particular relationship to function separating the protective member and the mold sealing members, it found that could dramatically improve the reliability regardless of use environment, accomplished the present invention. 本発明の構成による信頼性向上は定かではないが、工場など特殊環境下における光半導体装置の特性劣化が特殊雰囲気での光半導体装置内部への不要なガスの浸入にあると考えられる。 Without reliable improvement clear by the configuration of the present invention, characteristic degradation of the optical semiconductor device such as in special environments plant is considered to be ingress of unwanted gas into the inside of the optical semiconductor device of a special atmosphere. 即ち、光半導体装置はその特性ゆえに光半導体素子の光特性が十分発揮できる樹脂によりモールドする必要がある。 That is, the optical semiconductor device optical properties of the optical semiconductor element in its characteristics due needs to mold by sufficiently exhibited possible resin. また、その使用時等において機械的に光半導体素子等が損傷しないようなモールド封止部材を選択する必要がある。 Further, it is necessary to select the mold sealing members, such as mechanical optical semiconductor element or the like is not damaged in its use or the like.

【0008】このようなモールド封止部材は、分子間の結合が弱いまたは分子間距離が長い構造のものが多い。 [0008] Such molded sealing member, in many cases the bond is weak or intermolecular distances longer structure between molecules.
そのためにガス透過率が高く、硫化硫黄や酸素等のガスが光半導体装置を構成する光半導体素子の電極、金線等から成るワイヤを硫化、酸化等によって変質させる。 High gas permeability in order that the electrode of the optical semiconductor element sulfur and gas such as oxygen sulfide constituting the optical semiconductor device, a wire made of gold or the like sulfide, to deterioration by oxidation or the like. また、光半導体素子によっては表面を溶かしてしまい、光半導体装置の劣化を早めると考えられる。 Further, the optical semiconductor element will melt the surface, believed to hasten the degradation of the optical semiconductor device. 本発明は光半導体素子を保護するモールド封止部材と、パッケージ凹部内へのガスの浸入を防ぐ保護部材とを機能分離して形成させることにより信頼性を向上させ得るものである。 The present invention and the molded sealing member for protecting the optical semiconductor element, can improve the reliability by forming functions separating the protective member for preventing the intrusion of gas into the package in the recess.
以下、本発明の具体的実施例について詳述するがこれのみに限られないことはいうまでもない。 Hereinafter, it is needless to say that although described is not limited only to this specific embodiment of the present invention. (実施例1)図1は本発明の一実施例によるLED素子の模式的断面図である。 (Example 1) FIG. 1 is a schematic cross-sectional view of an LED device according to an embodiment of the present invention. また図2は、同じく本発明の一実施例によるLED素子の斜視図であるが、図1はそのA−A線断面図でもある。 The Figure 2 is also a perspective view of an LED device according to an embodiment of the present invention, FIG. 1 is also in its sectional view taken along line A-A. 以下、このような光半導体装置の一例としてLED素子の形成を述べる。 Hereinafter, we describe the formation of an LED device as an example of such an optical semiconductor device.

【0009】まず、金型内にリード電極となる金属片6、7を配置させた後、液晶ポリマーを注入させインサート成形させる。 [0009] First, after placing the metal strips 6, 7 serving as lead electrodes in a mold, it is insert molded to inject a liquid crystal polymer. 冷却後、金型から取り出すことによりパッケージ部材1を形成させた。 After cooling, to form a package member 1 by removing from the mold. この段階では、平面上に複数の開口部を有するパッケージとなっている。 At this stage, it has a package having a plurality of apertures on a plane. 形成されたパッケージ部材は、略中央に開口部が設けられており、開口部底面上とパッケージ部材の側面から裏面にかけてリード電極が露出していた。 Forming package member is provided with an opening substantially in the center, the lead electrode was exposed toward the rear surface from the side surface of the opening bottom on the package member. このようなパッケージ部材の材料としては、絶縁性に優れ、外力に対して比較強く容易に形成できる材料を利用することが望ましい。 As the material for a package member, excellent insulating properties, it is desirable to utilize a readily formed can material is strongly compared against an external force. パッケージ部材の具体的材料として、セラミクス、 Specific material of the package member, ceramics,
液晶ポリマー、PBT樹脂等の材料を利用することがこのましい。 Liquid crystal polymers, to utilize materials such as PBT resin preferred. パッケージ部材には、光半導体素子の特性により着色顔料を混合させ所望の色に着色させることもできる。 The package member, by mixing colored pigments according to the characteristics of the optical semiconductor element can also be colored in a desired color. また、パッケージ内に光半導体素子として発光素子であるLEDダイを1つ以上設けることができるし、 Further, to the LED die is a light-emitting element as an optical semiconductor element can be provided one or more in the package,
発光素子と受光素子とを同時に配置させることもできる。 It is also possible to arrange the light emitting element and a light receiving element at the same time.

【0010】リード電極6、7としては、凹部内に配置された光半導体素子にパッケージ外部と電気的に接続させるものであるため、電気伝導性に優れたものが好ましい。 [0010] As the lead electrodes 6 and 7, since they are to connect the package to the outside electrically to the optical semiconductor element arranged in the recess, has excellent electrical conductivity is preferred. リード電極の具体的材料としては、ニッケル等のメタライズあるいはリン青銅等の電機良導体を挙げることができる。 Specific material of the lead electrodes, can be mentioned metalized or electrical good conductor such as phosphor bronze or nickel. また、このような材料の表面に銀あるいは金等の平滑なメッキが施され、電極部材であるとともにL Moreover, smooth plating of silver or gold or the like on the surface of such materials is applied, L with an electrode member
EDダイからの光を効率よく外部に放出させるようにその表面を光反射部材として利用することもできる。 It is also possible to use the light from the ED die as a light reflecting member and the surface to be efficiently emitted to the outside.

【0011】形成されたパッケージ内部のリード電極上に銀ペーストを利用してLEDダイ2をダイボンドさせる。 [0011] Using a silver paste is die-bonded LED die 2 formed inside the package on the lead electrode. LEDダイが一対の電極を介して半導体層が形成されている場合は、ダイボンドと共に電気的に接続させることができる。 If the LED die is a semiconductor layer formed via a pair of electrodes, it can be electrically connected with the die bonding. このような光半導体素子は所望に応じて種々のものを利用することができる。 Such an optical semiconductor element can be used any of various desired. 具体的には、紫外線や可視光の長波長域が発光可能なLEDダイとして、 Specifically, as the LED die capable of emitting light long wavelength region of ultraviolet and visible light,
サファイア基板上に窒化物半導体が形成された発光素子、可視光の長波長域から赤外線が発光可能なガリウム砒素基板上に形成させたアルミニウム・ガリウム・インジウム隣やシリコンを利用した受光素子などが挙げられる。 Emitting element nitride semiconductor is formed on a sapphire substrate, and the like receiving element in which the infrared from the long wavelength region of visible light using aluminum gallium indium next or silicon is formed on the light emitting enable gallium arsenide substrate It is.

【0012】ダイボンドされた光半導体素子の各電極とリード電極6、7とを電気良導体なる金線3を利用してワイヤボンディングさせる。 [0012] and each of the electrodes of the die bonding optical semiconductor element and the lead electrode 6 through the use of electrical conductor comprising gold 3 is wire bonding. これにより光半導体素子とリード電極とを電気的に接続させる。 Thereby electrically connecting the optical semiconductor element and the lead electrode. 電気良導体は金線の他アルミニウム線などを利用することができる。 Good electrical conductors may be utilized such as other aluminum wire gold wire. 次に、LEDダイや電気良導体を保護させるため透光性のモールド部材4としてエポキシ樹脂を注入させた。 Then, as a mold member 4 of the translucent in order to protect the LED die and the electrical conductor is injected epoxy resin. モールド部材となる樹脂は光半導体素子を保護し、絶縁性が高く且つ透光性を有することが求められる。 Resin as a mold member protects the optical semiconductor device is required to have a high and translucent insulating property. 具体的には自身の熱変形によりワイヤボンディング部が破断しないよう、硬度がJIS A硬度の20からショアD硬度の80程度までの比較的柔軟な樹脂が好ましい。 By Specifically, its thermal deformation so that the wire bonding portion is not broken, the hardness is relatively flexible resin from 20 JIS A hardness up to about 80 Shore D hardness are preferable. モールド部材としてより具体的には、エポキシ系、シリコーン系、あるいは変性アクリル系等よりなる透光性封止樹脂が好ましい。 More specifically as a mold member, epoxy, silicone, or consisting of modified acrylic such as translucent sealing resin. モールド部材には所望に応じて光半導体素子からの光や光半導体素子への光を所望に応じてカットする着色剤や光を拡散させる拡散材、さらには所望の光に変換させる蛍光物質を好適に含有させることもできる。 Diffusing material in the mold member to diffuse the coloring agent and the light for cutting in accordance with the desired light to light and the optical semiconductor element from the optical semiconductor element as desired, further preferably a fluorescent material for converting the desired optical It can also be contained in the. なお、上述のエポキシ樹脂を120℃3時間で硬化させフィルム状のモールド部材を形成させた。 Incidentally, to form a film-like mold member to cure the above epoxy resin at 120 ° C. 3 hours. これを2 This 2
3℃において差圧気体透過度試験法により透過率を測定したところ約6500cc/m 2・24hrs・atm 3 was measured for transmittance by a difference pressure gas permeability test method at ℃ about 6500cc / m 2 · 24hrs · atm
であった。 Met.

【0013】次に、エポキシ樹脂が完全に硬化するる前に120℃に加熱した板を用い、ホットスタンピング法として厚さ約100μmのポリエチレン樹脂のフィルム状保護部材5をLEDダイが配置された複数の開口を有するパッケージ上に加圧させることにより形成させた。 [0013] Next, using an epoxy resin was heated to 120 ° C. before Ruru be cured completely plate, a film-like protective member 5 of the polyethylene resin having a thickness of about 100μm as the hot stamping method LED dies are arranged a plurality It was formed by causing pressurized on a package having an opening.
モールド封止部材4はまだ柔軟な状態なので、フィルム状保護部材5を接着しやすかった。 Since mold sealing member 4 is a still flexible state, it was easy to adhere the film-like protective member 5. なお、上記ポリエチレン樹脂を差圧気体透過度試験を行ったところ約198 Incidentally, about it was subjected to differential pressure gas permeability testing the polyethylene resin 198
cc/m 2・24hrs・atmであった。 It was cc / m 2 · 24hrs · atm .

【0014】本発明の特徴となる保護部材はモールド部材よりもガス透過率の低いものを利用している。 [0014] Features and made protection member of the present invention utilizes low in gas permeability than the mold member. 保護部材自体はLEDダイなどを被覆して機械的に保護する必要はないが、外力に対して比較的硬度の高いショアD8 The protective member itself need not be mechanically protected by covering an LED die, Shore relatively high hardness relative to the external force D8
0以上ものが好ましい。 0 or more is preferable. 特に、保護部材は熱膨張や熱収縮によりLEDダイそのものを直接破壊するものではないためガスが透過しにくい比較的緻密な樹脂が好適に挙げられる。 In particular, the protective member is gas transmissive hardly relatively dense resins are preferably exemplified because does not destroy the LED die itself directly by thermal expansion or thermal contraction. 具体的には不飽和ポリエステル、ポリエチレン、ポリメチルペンテン、フッ素樹脂等が挙げられる。 Specifically unsaturated polyester, polyethylene, polymethyl pentene, fluorocarbon resins.
特に、ガス透過率が1000cc/m 2・24hrs・ In particular, the gas permeability is 1000cc / m 2 · 24hrs ·
atm以下であることが好ましい。 It is preferable atm is less than or equal to. より好ましくは30 More preferably 30
0cc/m 2・24hrs・atm以下である。 0cc / m is 2 · 24hrs · atm or less. また、 Also,
保護部材をフィルム状に形成させる場合は約10〜15 Case of forming a protective member in the form of a film is about 10 to 15
0μm程度の厚さにすることが好ましい。 It is preferable that the thickness of about 0 .mu.m. これにより、 As a result,
硬質のフィルム状保護部材であっても、モールド封止部材の変形に対しても剥離したり、割れたりすることなく追従し得ることができる。 Be a film-like protective member rigid, can be followed without also peeled off, or cracks the deformation of the mold sealing members. また、保護部材形成時の温度、溶媒、材質などの諸条件によってガス透過率を制御することもできる。 Also, the temperature can be at protecting member formed, the solvent, also control the gas permeability by various conditions such as the material.

【0015】また、図3は本発明の一実施例によるLE Further, LE according to an embodiment of FIG. 3 is the invention
D素子のパッケージ部材を切断する前の模式的断面図であるが、31、32のように、各開口部近傍には後に各LED素子に分割しやすいように溝を切ってある。 Is a schematic sectional view prior to cutting the package member of the D element, as 31 and 32, in the vicinity of each opening are cut groove to be easy to divide into the LED elements after. この溝は加圧により余分なモールド部材が流れ込みモールド部材の厚みを一定とさせる効果もある。 The groove is also effective for a constant thickness of the mold member flows extra mold member by pressure. 溝に沿って保護部材ごとパッケージ部材を切断してLED素子を形成させた。 To form a LED element by cutting the protective member for each package member along the groove. (比較例1)保護部材を用いず120℃3時間でモールド部材を硬化させた以外は実施例1と同様にして光半導体装置である発光ダイオードを形成させた。 Was formed (Comparative Example 1) light-emitting diode except curing the mold member at 120 ° C. 3 hours without using a protective member is an optical semiconductor device in the same manner as in Example 1. 形成されたLED素子は共にほとんど同じ発光輝度を示した。 LED device formed had both showed almost the same emission luminance.

【0016】比較例1のLED素子と実施例1のLED [0016] The LED device of Comparative Example 1 LED of Example 1
素子を共に700個づつ硫化ガス中に500時間晒した。 It was exposed for 500 hours to the element both in 700 increments sulfide gas. 試験前後のLED素子光出力変化を測定したところ、従来のLED素子では試験前に比べ試験後は平均3 Measurement of the LED element light output change before and after the test, after the test than before the test in the conventional LED element average 3
4%も光出力が低下したのに対し、本発明によるLED 4% even while the light output drops, LED according to the invention
素子では試験前に比べ試験後は約7%しか光出力は低下しなかった。 After the test compared to before the test in element only light output about 7% did not decrease. 試験後の出力が大きく低下したLED素子を分解して調べたところ、ワイヤやLEDダイの電極が硫化されており黒色に変質して劣化が進んでおり、本発明によるLED素子が比較例1のLED素子に対して極めて信頼性に優れたものであることが確認された。 When the output after the test was examined by decomposing significantly reduced LED element, a wire and LED die electrode may deteriorate in black are sulfurized is progressing deterioration, LED device according to the invention Comparative Example 1 it the LED element is excellent very reliable was confirmed.

【0017】また、実施例1のLED素子と比較例1のLED素子とを共に超硬合金よりなるマウンタノズルを使用して、マウンタで10回LED素子吸着から搭載を繰り返したところ、比較例1のLED素子では素子表面のノズル当接部に深さ10μm程度の傷が多数見られたのに対し、実施例1によるLED素子では表面傷は全く観察されず、本発明によるLED素子が従来のLED素子に対して極めて傷付きにも強いものであることも確認された。 Further, when using a mounter nozzle together consisting of cemented carbide and a LED element of the LED element and Comparative Example 1 Example 1 was repeated mounting from ten LED elements adsorbed mounter, Comparative Example 1 scratches having a depth of about 10μm in the nozzle abutment element surface with LED elements to those seen many, surface flaws are not observed at all in the LED element in embodiment 1, the LED device according to the present invention is a conventional it was also confirmed that the LED element is extremely those resistant to scratching.

【0018】 [0018]

【発明の効果】上記のように、光半導体素子を被覆するモールド部材と、モールド部材に被覆されるLEDダイなどを損傷させるガスの浸入を防ぐ保護部材とを機能分離して設けることにより光電気特性を損傷することなく、極めて信頼性に優れたLED素子を得ることができる。 As described above, according to the present invention, photoelectric By providing a molding member covering the optical semiconductor element, and a protective member for preventing the intrusion of gas which damages the LED die to be coated on the mold member functionally separated without damaging the characteristics, it is possible to obtain the LED element having excellent very reliable.

【0019】また、本発明の光半導体装置は、フィルム状の保護部材をホットスタンピングすることで樹脂の凹凸面をなくして平坦にし光学特性を安定化させると同時に、モールド部材の量を一定にすることもできる。 Further, the optical semiconductor device of the present invention, at the same time eliminates the uneven surface of the resin to stabilize the optical properties were flattened with the hot stamping film-like protective member to a constant amount of mold members it is also possible.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】 図1は本発明の一実施例による、LED素子の模式的断面図を示す。 Figure 1 is according to one embodiment of the present invention, showing a schematic cross-sectional view of an LED element. また、図2のA−A線断面を示す。 Also shows the A-A line cross section of Figure 2.

【図2】 図2は本発明の一実施例による、LED素子の斜視図を示す。 Figure 2 according to one embodiment of the present invention, shows a perspective view of an LED element.

【図3】 図3は本発明の一実施例による、パッケージ部材を切断する前のLED素子の模式的断面図を示す。 Figure 3 according to one embodiment of the present invention, showing a schematic cross-sectional view of the front of the LED elements to cut the package member.

【図4】 図4は本発明と比較のために示すLED素子の模式的断面図を示す。 Figure 4 shows a schematic cross-sectional view of an LED device shown for comparison with the present invention.

【符号の説明】 DESCRIPTION OF SYMBOLS

1・・・パッケージ部材 2・・・LEDダイ 3・・・ワイヤ 4・・・モールド封止部材 5・・・フィルム状保護部材 6、7・・・電極部材 31、32・・・溝部分 33・・・モールド封止部材 41・・・パッケージ部材 42・・・LEDダイ 43・・・ワイヤ 44・・・モールド封止部材 46、47・・・電極部材 1 ... package member 2 ... LED die 3 ... wire 4 ... mold sealing member 5 ... film-like protective member 6 ... electrode members 31, 32 ... groove portion 33 ... mold sealing member 41 ... package member 42 ... LED dies 43 ... wire 44 ... mold sealing members 46, 47 ... electrode member

Claims (2)

    【特許請求の範囲】 [The claims]
  1. 【請求項1】 表面に凹部を有するパッケージ部材と、 A package member having a recess to 1. A surface,
    該パッケージ部材の凹部内と外部とを電気的に接続させる少なくとも一対のリード電極と、該一対のリード電極とそれぞれ電気的に接続された光半導体素子と、該光半導体素子が配置された凹部内のモールド封止部材と、該モールド封止部材を被覆する保護部材とを有する光半導体装置であって、前記保護部材を構成する樹脂のガス透過率が、前記モールド封止部材を構成する樹脂のガス透過率よりも小さいことを特徴とする光半導体装置。 At least a pair of lead electrodes electrically connecting the recess and the outside of the package member, an optical semiconductor element, respectively and said pair of lead electrodes are electrically connected, within a recess optical semiconductor elements are arranged of the mold sealing member, an optical semiconductor device having a protection member covering the mold sealing member, the gas permeability of the resin constituting the protection member, the resin constituting the molded sealing member the optical semiconductor device, wherein the smaller the gas permeability.
  2. 【請求項2】 前記保護部材はモールド封止部材によって接着されたフィルムである請求項1に記載の光半導体装置。 Wherein said protective member is an optical semiconductor device according to claim 1, wherein the film adhered by mold sealing member.
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