JP2000174322A - Optical detector - Google Patents
Optical detectorInfo
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- JP2000174322A JP2000174322A JP10342984A JP34298498A JP2000174322A JP 2000174322 A JP2000174322 A JP 2000174322A JP 10342984 A JP10342984 A JP 10342984A JP 34298498 A JP34298498 A JP 34298498A JP 2000174322 A JP2000174322 A JP 2000174322A
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は半導体光検出器に
関する。[0001] The present invention relates to a semiconductor photodetector.
【０００２】[0002]
【従来の技術及び発明が解決しようとする課題】 従
来の光検出器はＧａＡｓ，ＩｎＰのようなＩＩ−ＶＩ族
あるいはＩＩＩ−Ｖ族の化合物材料を主成分として構成
するのが一般的であるが、これらの材料は人体や環境に
有害であったり、高価となる問題があった。 従来の光検出器は検出波長帯域が一つしかなく、一
つの検出器はある特定の波長しか検出できない。感応波
長を変える場合、主成分となる材料を変更する必要があ
り、製造工程が複雑となる問題があった。2. Description of the Related Art A conventional photodetector generally comprises a II-VI or III-V compound material such as GaAs or InP as a main component. However, these materials have a problem that they are harmful to the human body and the environment and are expensive. A conventional photodetector has only one detection wavelength band, and one detector can detect only a specific wavelength. When the sensitive wavelength is changed, it is necessary to change the material that is the main component, and there has been a problem that the manufacturing process is complicated.
【０００３】 従来では、相異なるｍ個の波長の光を
検出するためには、図５に示すように、光を分岐するた
めの光カプラ２と各波長をそれぞれ検出波長帯域とする
ｍ種の光検出器３−１〜３−ｍを必要とし、光学系が複
雑となる問題があった。Conventionally, in order to detect light of m different wavelengths, as shown in FIG. 5, an optical coupler 2 for splitting light and m kinds of light having respective wavelengths as detection wavelength bands are used. Photodetectors 3-1 to 3-m are required, and there is a problem that an optical system is complicated.
【０００４】[0004]
【課題を解決するための手段】（１）請求項１の光検出
器は、ｐ形またはｎ形Ｓi 基板の一面に第１電極が形成
され、Ｓｉ基板の他面にｐｎ接合を有するＳｉ1-x Ｇｅ
x （ｘは混晶比）混晶層がヘテロエピタキシャル成長に
より形成され、その混晶層の外面の周辺に第２電極が形
成され、混晶層の外面に入射された混晶比ｘに対応する
波長λの光を検出して、第１，第２電極間に発生する電
圧Ｖを出力する。Means for Solving the Problems] (1) of the optical detector according to claim 1, the first electrode is formed on one surface of a p-type or n-type Si substrate, Si 1 having a pn junction to the other surface of the Si substrate -x Ge
x (x is a mixed crystal ratio) A mixed crystal layer is formed by heteroepitaxial growth, a second electrode is formed around the outer surface of the mixed crystal layer, and the second electrode is formed corresponding to the mixed crystal ratio x incident on the outer surface of the mixed crystal layer. A light having a wavelength λ is detected, and a voltage V generated between the first and second electrodes is output.
【０００５】（２）請求項２の光検出器は、ｐ形または
ｎ形Ｓi 基板の一面に第１電極が形成され、Ｓｉ基板の
他面にｐｎ接合を有するＳｉ1-x1Ｇｅx1第１混晶層がヘ
テロエピタキシャル成長により形成され、その第１混晶
層の上面にｐｎ接合を有するＳｉ1-x2Ｇｅx2第２混晶層
がヘテロエピタキシャル成長により形成され、同様にｐ
ｎ接合を有するＳｉ1-xjＧｅxj第ｊ混晶層（ｊ＝１〜
ｍ；ｘ１＞ｘ２＞…＞ｘｍ）が順に積層され、その第ｍ
混晶層の外面の周辺に第２電極が形成され、その第ｍ混
晶層の外面に入射された混晶比ｘｊに対応する波長λｊ
（ｊ＝１〜ｍ）の光Ｌｊを検出して、第１，第２電極間
に発生する電圧Ｖｊを出力する。(2) A photodetector according to claim 2, wherein a first electrode is formed on one surface of a p-type or n-type Si substrate and a Si 1-x1 Ge x1 first having a pn junction on the other surface of the Si substrate. A mixed crystal layer is formed by heteroepitaxial growth, and a Si 1-x2 Ge x2 second mixed crystal layer having a pn junction is formed on the upper surface of the first mixed crystal layer by heteroepitaxial growth.
Si 1-xj Ge xj j-th mixed crystal layer having an n-junction (j = 1 to
m; x1>x2>...> xm) are sequentially stacked, and the m-th
A second electrode is formed around the outer surface of the mixed crystal layer, and a wavelength λj corresponding to the mixed crystal ratio xj incident on the outer surface of the m-th mixed crystal layer
(J = 1 to m) light Lj is detected, and a voltage Vj generated between the first and second electrodes is output.
【０００６】（３）請求項３の発明は、前記（２）にお
いて、第ｊ混晶層（ｊ＝１〜ｍ）の不純物のドープ量を
変えることによって、出力電圧Ｖｊ（ｊ＝１〜ｍ）のそ
れぞれの振幅に差が設けられている。(3) In the invention of claim 3, the output voltage Vj (j = 1 to m) is changed by changing the doping amount of impurities in the j-th mixed crystal layer (j = 1 to m). ) Are different from each other.
【０００７】[0007]
【発明の実施の形態】（１）第１実施例 光検出器は図１Ａに示すように、ｐ形またはｎ形（図１
Ａではｐ形）Ｓi 基板６の一面に第１電極４が例えばＡ
ｌにより形成され、Ｓｉ基板６の他面にｐｎ接合を有す
るＳｉ1-x Ｇｅx （ｘは混晶比）混晶層７がヘテロエピ
タキシャル成長により形成され、その混晶層７の外面の
周辺に第２電極５が例えばＡｌにより形成される。混晶
層７の外面に入射された混晶比ｘに対応する波長λの光
Ｌを検出して、第１，第２電極４，５間に発生する電圧
Ｖを出力する。DESCRIPTION OF THE PREFERRED EMBODIMENTS (1) First Embodiment As shown in FIG. 1A, a photodetector is a p-type or n-type (FIG. 1).
The first electrode 4 is, for example, A on one surface of the Si substrate 6.
, and a Si 1-x Ge x (x is a mixed crystal ratio) mixed crystal layer 7 having a pn junction on the other surface of the Si substrate 6 is formed by heteroepitaxial growth, and is formed around the outer surface of the mixed crystal layer 7. The second electrode 5 is formed of, for example, Al. The light L having a wavelength λ corresponding to the mixed crystal ratio x incident on the outer surface of the mixed crystal layer 7 is detected, and a voltage V generated between the first and second electrodes 4 and 5 is output.
【０００８】混晶層７のｐ形Ｓｉ基板６と接する半部は
ｎ形とされ、他の半部はｐ形とされ、中間にｐｎ接合が
形成される。半導体にドープする不純物を変えることで
ｐ形とｎ形を作り分けることができる。ドープされる不
純物としてはｐ形の場合はＢ，Ｇａ等が、またｎ形の場
合はＰ，Ａｓ等が用いられる。なお、上記のヘテロエピ
タキシャル成長とは、ある物質上に異なる他の物質をエ
ピタキシャル成長させることである。ＳｉとＧｅの格子
定数の差は約4.２％と小さな値である。Ｓｉ1-x Ｇｅx
混晶層７は、Ｓｉ基板６と格子定数の不整合は上記の4.
２％よりも更に小さくなる。このように約4.２％より小
さな格子定数の差を有する混晶層７はＳｉ基板上に容易
にエテロエピタキシャル成長させることができる。The half of the mixed crystal layer 7 which is in contact with the p-type Si substrate 6 is made n-type, the other half is made p-type, and a pn junction is formed in the middle. The p-type and the n-type can be separately formed by changing the impurity to be doped into the semiconductor. As the impurity to be doped, B, Ga or the like is used for the p-type, and P, As or the like is used for the n-type. The above-mentioned heteroepitaxial growth refers to epitaxial growth of a different substance on a certain substance. The difference between the lattice constants of Si and Ge is as small as about 4.2%. Si 1-x Ge x
The mismatch between the lattice constant of the mixed crystal layer 7 and that of the Si substrate 6 is the same as described in 4.
Even less than 2%. Thus, the mixed crystal layer 7 having a difference in lattice constant smaller than about 4.2% can be easily eroepitaxially grown on the Si substrate.
【０００９】この発明では、人体や環境に無害なＳｉ及
びＧｅを主成分に用いると共に、Ｓｉ基板上に、Ｓｉ
1-x Ｇｅx 混晶層を形成し、その混晶比ｘに対応する感
応波長λを持つ光検出器を得る点が従来と異なる点であ
る。これに対し従来は主成分とする材料を変えることに
よって異なる感応波長を持つ光検出器を得ていたもので
ある。In the present invention, Si and Ge, which are harmless to the human body and the environment, are used as main components, and Si and Ge are deposited on the Si substrate.
The difference from the prior art is that a 1-x Ge x mixed crystal layer is formed and a photodetector having a sensitive wavelength λ corresponding to the mixed crystal ratio x is obtained. On the other hand, conventionally, a photodetector having a different sensitive wavelength has been obtained by changing a material as a main component.
【００１０】図２にＳｉ1-x Ｇｅx 混晶のバンドギャッ
プＥｇのＧｅ組成依存性の一例を示す。Ｇｅ組成比（混
晶比）ｘが０から１に増加するに従ってバンドギャップ
Ｅｇは1.１７から、この例では0.５に次第に減少する。
Ｓｉ1-x Ｇｅx 混晶のｐｎ接合部は、そのバンドギャッ
プＥｇよりも小さなエネルギーを持つ光、つまり感応波
長λよりも長い波長の光は感応せず、そのまま透過さ
せ、バンドギャップＥｇと同程度またはそれよりも大き
なエネルギーを持つ光、つまり感応波長λと同程度また
はそれよりも短い波長の光を吸収し、光電変換する。こ
のように混晶層７のバンドギャップＥｇとその感応波長
λとは逆に対応し、バンドギャップＥｇが大きくなれば
感応波長λは小さくなる。FIG. 2 shows an example of the dependence of the band gap Eg of the Si 1-x Ge x mixed crystal on the Ge composition. As the Ge composition ratio (mixed crystal ratio) x increases from 0 to 1, the band gap Eg gradually decreases from 1.17 to 0.5 in this example.
The pn junction of the Si 1-x Ge x mixed crystal does not respond to light having energy smaller than its band gap Eg, that is, light having a wavelength longer than the sensitive wavelength λ, and transmits the light as it is. It absorbs light having energy of a degree or greater, that is, light having a wavelength about the same as or shorter than the sensitive wavelength λ, and performs photoelectric conversion. As described above, the band gap Eg of the mixed crystal layer 7 and the sensitive wavelength λ correspond in reverse, and the sensitive wavelength λ decreases as the band gap Eg increases.
【００１１】（２）第２実施例 請求項２の発明の光検出器は図１Ｂに示すように、ｐ形
またはｎ形（図１Ｂではｐ形）Ｓi 基板６の一面に第１
電極４が形成され、Ｓｉ基板６の他面にｐｎ接合を有す
るＳｉ1-x1Ｇｅx1第１混晶層７−１がヘテロエピタキシ
ャル成長により形成され、その第１混晶層７−１の上面
にｐｎ接合を有するＳｉ1-x2Ｇｅx2第２混晶層７−２が
ヘテロエピタキシャル成長により形成され、同様にして
ｐｎ接合を有するＳｉ1-xjＧｅxj第ｊ混晶層（ｊ＝１〜
ｍ；ｘ１＞ｘ２＞…＞ｘｍ）が順に積層され、その第ｍ
混晶層７−ｍの外面の周辺に第２電極５が形成される。
その第ｍ混晶層７−ｍの外面に入射された混晶比ｘｊに
対応する波長λｊ（ｊ＝１〜ｍ）の光Ｌｊを検出して、
第１，第２電極４，５間に対応する電圧Ｖｊを出力す
る。(2) Second Embodiment As shown in FIG. 1B, the photodetector according to the second aspect of the present invention has a p-type or n-type (p-type in FIG.
An electrode 4 is formed, a Si 1-x1 Ge x1 first mixed crystal layer 7-1 having a pn junction on the other surface of the Si substrate 6 is formed by heteroepitaxial growth, and an upper surface of the first mixed crystal layer 7-1 is formed. A Si 1-x2 Ge x2 second mixed crystal layer 7-2 having a pn junction is formed by heteroepitaxial growth, and similarly, a Si 1-xj Ge xj j-th mixed crystal layer having a pn junction (j = 1 to
m; x1>x2>...> xm) are sequentially stacked, and the m-th
The second electrode 5 is formed around the outer surface of the mixed crystal layer 7-m.
Light Lj having a wavelength λj (j = 1 to m) corresponding to the mixed crystal ratio xj incident on the outer surface of the m-th mixed crystal layer 7-m is detected,
A voltage Vj corresponding between the first and second electrodes 4 and 5 is output.
【００１２】混晶比ｘｍを有する最上段の混晶層７−ｍ
において、感応波長λ１＞λ２＞…＞λｍを有する入射
光Ｌ１（λ１）〜Ｌｍ（λｍ）のうち、最小の感応波長
λｍ〔最大のエネルギーバンドＥｇｍ〕を持つ光Ｌｍの
みが吸収されて光電変換され、その他の光はそのまま透
過し、混晶比ｘ（ｍ−１）を有する次の混晶層７−（ｍ
−１）において、感応波長λ（ｍ−１）〔エネルギーバ
ンドＥｇ（ｍ−１）〕を持つ光Ｌ（ｍ−１）のみが吸収
され、光電変換される。以下同様にして、混晶比ｘ１を
有する混晶層７−１において、最大の感応波長λ１〔最
小のエネルギーバンドＥｇ１〕を持つ光Ｌ１が吸収さ
れ、光電変換される。The uppermost mixed crystal layer 7-m having a mixed crystal ratio xm
Of the incident lights L1 (λ1) to Lm (λm) having the sensitive wavelengths λ1> λ2 >>. The other light is transmitted as it is, and the next mixed crystal layer 7- (m) having the mixed crystal ratio x (m-1) is formed.
In -1), only light L (m-1) having a sensitive wavelength λ (m-1) [energy band Eg (m-1)] is absorbed and photoelectrically converted. Similarly, in the mixed crystal layer 7-1 having the mixed crystal ratio x1, the light L1 having the maximum sensitive wavelength λ1 [minimum energy band Eg1] is absorbed and photoelectrically converted.
【００１３】一般に、エネルギーバンドＥｇｊを持つ混
晶層（ｐｎ接合部）７−ｊでは、エネルギーバンドＥｇ
がＥｇｊに等しいかそれより大きい（感応波長λがλｊ
に等しいかそれより小さい）光は感応するが、エネルギ
ーバンドＥｇがＥｇｊより小さい（感応波長λがλｊよ
り大きい）光は感応せず、そのまま透過する。例えばｍ
＝２の場合、λ１≒1.５μm の光Ｌ１と、λ２≒1.３μ
m の光Ｌ２より成る入射光Ｌを、第１，第２混晶層の混
晶比をｘ１≒0.４，ｘ２≒0.３としたこの発明の光検出
器で受光して、それぞれの光を光電変換することができ
る。Generally, in the mixed crystal layer (pn junction) 7-j having the energy band Egj, the energy band Egj
Is equal to or greater than Egj (the sensitive wavelength λ is λj
(Equal to or less than) is sensitive, but light whose energy band Eg is smaller than Egj (sensitive wavelength λ is larger than λj) is not sensitive and is transmitted as it is. For example, m
= 2, light L1 of λ1 ≒ 1.5 μm and λ2 ≒ 1.3 μm
The incident light L composed of the light L2 of m is received by the photodetector of the present invention in which the mixed crystal ratio of the first and second mixed crystal layers is x1 ≒ 0.4, x2 ≒ 0.3. Light can be photoelectrically converted.
【００１４】図３Ａ，Ｂに示すように、光Ｌ１，Ｌ２が
それぞれ２値の信号光であるとき、光Ｌ１（λ１）のみ
が入射したときの出力電圧をＶ１，光Ｌ２（λ２）のみ
が入射したときの出力電圧をＶ２とし、それぞれの振幅
をＥ１，Ｅ２とする。混晶層７−１，７−２のｐ，ｎ層
の不純物のドープ量によって、振幅Ｅ１，Ｅ２に差をつ
けることができ、ここでＥ１≠Ｅ２とする（請求項
３）。As shown in FIGS. 3A and 3B, when the lights L1 and L2 are binary signal lights, the output voltage when only the light L1 (λ1) is incident is V1, and only the light L2 (λ2) is The output voltage at the time of incidence is V2, and the respective amplitudes are E1 and E2. The amplitudes E1 and E2 can be made different depending on the doping amounts of the impurities in the p and n layers of the mixed crystal layers 7-1 and 7-2, where E1 ≠ E2 (claim 3).
【００１５】光Ｌ１，Ｌ２が同時に入射したときの出力
電圧Ｖは図３Ｃに示すように、上述のＶ１，Ｖ２が重畳
した電圧となる。図４に示すように、光検出器３の出力
側に必要に応じ信号検出回路８を設けて、出力電圧の振
幅Ｅ０，Ｅ１，Ｅ２，Ｅ３（＝Ｅ１＋Ｅ２）を識別する
ことによって電圧Ｖ１，Ｖ２にそれぞれ対応する２値デ
ータＳ１（λ１），Ｓ２（λ２）を抽出することができ
る。As shown in FIG. 3C, the output voltage V when the lights L1 and L2 are simultaneously incident is a voltage in which the above-mentioned V1 and V2 are superimposed. As shown in FIG. 4, a signal detection circuit 8 is provided on the output side of the photodetector 3 as needed, and the voltages V1 and V2 are determined by identifying the amplitudes E0, E1, E2 and E3 (= E1 + E2) of the output voltages. Can be extracted as binary data S1 (λ1) and S2 (λ2).
【００１６】なお、光検出器はＭＢＥ（Molecular Beam
Epitaxy) 装置で１０-10 Ｔorr 以下の高真空及び４０
０〜５００℃でＳｉ基板上にｎ形及びｐ形のＳｉ1-x Ｇ
ｅxを順に低温成長させることができる。The light detector is an MBE (Molecular Beam).
Epitaxy) High vacuum of less than 10 -10 Torr and 40
N-type and p -type Si 1-x G on a Si substrate at 0 to 500 ° C.
The e x turn can be grown at a low temperature.
【００１７】[0017]
【発明の効果】 この発明によれば、従来の人体や環
境に有害なＧａＡｂや、高価なＩｎＰのような材料を主
成分に用いず、無害で安価なＳｉ及びＧｅを主成分とし
て光検出器を構成できる。 この発明では感応波長を変える場合、混晶比ｘによ
って変えることができるので、従来の主成分材料自体を
変更する場合に比べて製造工程を簡単化できる。According to the present invention, a photodetector comprising harmless and inexpensive Si and Ge as main components without using conventional materials such as GaAs or expensive InP which is harmful to the human body and the environment. Can be configured. In the present invention, when the sensitive wavelength is changed, it can be changed by the mixed crystal ratio x, so that the manufacturing process can be simplified as compared with the conventional case where the main component material itself is changed.
【００１８】 この発明によれば、混晶比ｘｊの異な
るｍ種の感応波長λｊ（エネルギーギャップＥｇｊ）を
有する混晶層７−ｊ（ｊ＝１〜ｍ）をヘテロエピタキシ
ャル成長させた１個の光検出器によって、ｍ種の波長の
光を検出することができるので光学系を簡単化できる。According to the present invention, one light obtained by heteroepitaxially growing the mixed crystal layer 7-j (j = 1 to m) having m kinds of sensitive wavelengths λj (energy gap Egj) having different mixed crystal ratios xj. Since the detector can detect light of m kinds of wavelengths, the optical system can be simplified.
【図１】この発明の実施例を示す原理的な縦断面図。FIG. 1 is a longitudinal sectional view showing a principle of an embodiment of the present invention.
【図２】Ｓｉ1-x Ｇｅx 混晶のバンドギャップのＧｅ組
成依存性を示す図。FIG. 2 is a diagram showing the Ge composition dependence of the band gap of a Si 1-x Ge x mixed crystal.
【図３】図１Ｂに示す光検出器の出力電圧の波形図。FIG. 3 is a waveform diagram of an output voltage of the photodetector shown in FIG. 1B.
【図４】図１Ｂの光検出器に信号検出回路を組み合わせ
た装置のブロック図。FIG. 4 is a block diagram of an apparatus in which a signal detection circuit is combined with the photodetector of FIG. 1B.
【図５】従来の光カプラとｍ種の光検出器より成る装置
のブロック図。FIG. 5 is a block diagram of a device including a conventional optical coupler and m types of photodetectors.
Claims (3)
極が形成され、前記Ｓｉ基板の他面にｐｎ接合を有する
Ｓｉ1-x Ｇｅx （ｘは混晶比）混晶層がヘテロエピタキ
シャル成長により形成され、その混晶層の外面の周辺に
第２電極が形成され、前記混晶層の外面に入射された前
記混晶比ｘに対応する波長λの光を検出して、前記第
１，第２電極間に対応する電圧Ｖを出力する光検出器。A first electrode is formed on one surface of a p-type or n-type Si substrate, and a Si 1-x Ge x (x is a mixed crystal ratio) mixed crystal layer having a pn junction is formed on the other surface of the Si substrate. A second electrode is formed around the outer surface of the mixed crystal layer formed by heteroepitaxial growth, and light having a wavelength λ corresponding to the mixed crystal ratio x incident on the outer surface of the mixed crystal layer is detected. A photodetector that outputs a voltage V corresponding to a voltage between the first and second electrodes;
極が形成され、前記Ｓｉ基板の他面にｐｎ接合を有する
Ｓｉ1-x1Ｇｅx1第１混晶層がヘテロエピタキシャル成長
により形成され、その第１混晶層の上面にｐｎ接合を有
するＳｉ1-x2Ｇｅx2第２混晶層がヘテロエピタキシャル
成長により形成され、同様にｐｎ接合を有するＳｉ1-xj
Ｇｅxj第ｊ混晶層（ｊ＝１〜ｍ；ｘ１＞ｘ２＞…＞ｘ
ｍ）が順に積層され、その第ｍ混晶層の外面の周辺に第
２電極が形成され、その第ｍ混晶層の外面に入射された
前記混晶比ｘｊに対応する波長λｊ（ｊ＝１〜ｍ）の光
を検出して、前記第１，第２電極間に対応する電圧Ｖｊ
を出力する光検出器。2. A first electrode is formed on one surface of a p-type or n-type Si substrate, and a Si 1-x1 Ge x1 first mixed crystal layer having a pn junction is formed on the other surface of the Si substrate by heteroepitaxial growth. A Si 1-x2 Ge x2 second mixed crystal layer having a pn junction is formed on the upper surface of the first mixed crystal layer by heteroepitaxial growth, and similarly, a Si 1-xj having a pn junction is formed.
Ge xj j-th mixed crystal layer (j = 1 to m; x1>x2>...> X
m) are sequentially stacked, a second electrode is formed around the outer surface of the m-th mixed crystal layer, and the wavelength λj (j = j) corresponding to the mixed crystal ratio xj incident on the outer surface of the m-th mixed crystal layer 1 to m), and detects a voltage Vj corresponding to the voltage between the first and second electrodes.
Output photodetector.
＝１〜ｍ）の不純物のドープ量を変えることによって、
前記出力電圧Ｖｊ（ｊ＝１〜ｍ）のそれぞれの振幅に差
が設けられていることを特徴とする光検出器。3. The j-th mixed crystal layer (j) according to claim 2,
= 1 to m) by changing the doping amount of the impurity,
A photodetector wherein a difference is provided between respective amplitudes of the output voltage Vj (j = 1 to m).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10342984A JP2000174322A (en) | 1998-12-02 | 1998-12-02 | Optical detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10342984A JP2000174322A (en) | 1998-12-02 | 1998-12-02 | Optical detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000174322A true JP2000174322A (en) | 2000-06-23 |
Family
ID=18358043
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10342984A Pending JP2000174322A (en) | 1998-12-02 | 1998-12-02 | Optical detector |
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| Country | Link |
|---|---|
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1293374C (en) * | 2002-04-17 | 2007-01-03 | 北京师范大学 | Novel structure photoelectric detector capable of measuring wave length and detecting method |
| JP2010263601A (en) * | 2009-04-09 | 2010-11-18 | Nec Corp | Optical receiving device and signal light conversion method of the same |
-
1998
- 1998-12-02 JP JP10342984A patent/JP2000174322A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1293374C (en) * | 2002-04-17 | 2007-01-03 | 北京师范大学 | Novel structure photoelectric detector capable of measuring wave length and detecting method |
| JP2010263601A (en) * | 2009-04-09 | 2010-11-18 | Nec Corp | Optical receiving device and signal light conversion method of the same |
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