JP2000171491A - Power semiconductor module - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve the current detecting accuracy of a current sensor installed to a conductive member by controlling the gate voltage of a power semiconductor chip in accordance with the output level of the detecting signal of the sensor. SOLUTION: A power semiconductor chip (IGBT) 1 mounted on an insulating substrate 8 carries an emitter electrode 9 on its upper surface and a collector electrode 10 formed on the lower surface of the chip 1 is electrically connected to a thin metallic sheet P1 on the substrate 8 with solder, etc. In addition, a current sensor 13 is installed to the wiring electrode 11 of a conductive member which functions as a bus bar 11a (main circuit member) and one end of the electrode 11 is electrically connected to the emitter electrode 9 with a conductive resin 12. The current sensor 13 composed of a Rogowskii coil is formed in an annular shape around the wiring electrode 11 passed through the doughnut- like torus of the sensor 13 and detects the current flowing through the electrode 11. A control circuit inputs the current detecting signal of the sensor 13 and controls the gate voltage of the IGBT 1 in accordance with the output level of the detecting signal. Therefore, the sensor 13 is not affected by noise and no space is required for the installation of the sensor 13.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a power semiconductor module including an IGBT (Insulated Gate Bipolar Transistor) used for a power converter or the like, and in particular, detects a current with high accuracy and can protect the element from destruction due to overcurrent. The present invention relates to a simple power semiconductor module.

[0002]

2. Description of the Related Art Conventionally, a power converter made of a semiconductor has been used to control a drive current of an electric device such as a motor. As this type of power converter, for example, a power semiconductor including an IGBT is used. Modules are used.

In general, a power semiconductor module is provided with a current sensor, and when an overcurrent is detected, the IGBT is turned off to prevent destruction due to the overcurrent.

A power semiconductor (IGBT) module with such a current sensor is described in, for example, “Power Control” in “Special Issue, Introduction to Practical Power Electronics” (No. 54, Chapter 8) described in a magazine “Transistor Technology”. How to Use Intelligent Power Devices for Smartphones "(Yoshinori Yuu, Toshiyuki Furuya, Golab Majumdar, Toshimori Mori).

Hereinafter, a conventional power semiconductor module provided with an overcurrent detection circuit including a current sensor will be described with reference to FIG. FIG. 15 is a simplified circuit configuration diagram showing a conventional power semiconductor module with a current sensor.

Here, an IPM (Intelligent Power Module) will be described as a typical example of a power semiconductor module with a current sensor. Normal,
The IPM includes a temperature sensor in addition to the current sensor, and has a function of protecting the module when a current abnormality or a temperature abnormality occurs by a protection circuit in a control board built in the module.

In FIG. 15, reference numeral 1 denotes an NPN type I arranged in a case (not shown) of a power semiconductor module.
GBT. Reference numerals 1a and 1b denote output terminals of the IGBT 1, which are provided at the collector and the emitter of the IGBT 1, respectively.

Each output terminal 1a and 1b is, for example,
The IGBT 1 is connected to a motor (not shown) to be driven and supplies a large current through the output terminals 1a and 1b. For this reason, the IGBT 1 can be composed of a number of parallel cells.

Reference numeral 2 denotes a diode inserted between the collector and the emitter of the IGBT 1. As shown in the figure, the cathode is connected to the collector of the IGBT 1, and the anode is connected to the emitter of the IGBT 1. As described above, a plurality of IGBTs 1 and diodes 2 can be connected in parallel.

Reference numeral 3 denotes a gate resistor connected to the gate of the IGBT 1. A control circuit 4 controls on / off of the IGBT 1, and applies a control signal G to the gate of the IGBT 1 via the gate resistor 3.

Reference numeral 5 denotes a minute pattern for current detection formed on the chip of the IGBT 1, which is disposed in parallel with the emitter of the IGBT 1 so that a part of the main collector current of the IGBT 1 is reduced by 1/1000 to 1 It is derived with a split ratio of about / 20,000.

Reference numeral 6 denotes a shunt resistor for current detection connected to the minute pattern 5, and measures a current derived through the minute pattern 5 as a voltage value across the shunt resistor 6.

The voltage value across the shunt resistor 6 is IGB
It is input to the control circuit 4 as a current detection signal ic of the main collector current flowing through T1. Thereby, the control circuit 4
For example, when the current detection signal ic indicates an overcurrent, the control signal G for turning off the IGBT 1 is output, and the IGBT 1 is protected.

However, as shown in FIG.
1/1000 via the micropattern 5 on one chip
When the current detection signal ic is detected from a current derived with a small shunt ratio of 1/20000, the current detection signal i
Since the measurement accuracy of c is limited, a certain margin must be set for the set value for overcurrent determination.

Therefore, the reliability of the overcurrent determination cannot be sufficiently ensured, and the IGBT 1 cannot be sufficiently protected. Further, as described above, when the shunt resistor 6 for current detection is used, inconveniences such as wasteful power consumption and heat generation occur in the shunt resistor 6.

Although not shown, when an electromagnetically coupled current detector such as a CT (current transformer) is used, the current sensor itself is large in order to secure a wire bonding space on the IGBT 1 chip. Due to the shape, a design constraint due to the installation space problem is caused, and the influence of noise due to changes in the main circuit voltage and current increases.

That is, generally, the connection between the emitter electrode surface of the IGBT 1 and the main circuit (for example, a circuit on the motor side) is performed by wire bonding. However, when a CT is arranged on the emitter of the IGBT 1 as a current sensor. And the area occupied by the CT reduces the area where the wire can be bonded.

Therefore, a predetermined number of wires cannot be bonded in accordance with the main circuit current, and the current density of the wires increases. In addition, a special structure is required to electrically insulate the CT coil from the collector potential. For the above reasons, it is substantially difficult to install the CT on the IGBT 1, and another installation place is required.

As another electrical connection method instead of wire bonding, soldering can be considered. Usually, the upper surface electrode of a semiconductor chip such as the IGBT 1 or the diode 2 is formed of a metal film containing aluminum as a main component. Therefore, it is substantially difficult to solder the upper electrode and the wiring electrode of the IGBT1 (power semiconductor) chip by the usual method.

Therefore, a special power semiconductor chip is required, or a special soldering process is required. Further, in the soldering process, the wiring electrodes connected to the main circuit and the CT become hot, so that a material having excellent heat resistance must be used as a material for the CT, which leads to an increase in cost. Will be.

[0021]

As described above, in the conventional power semiconductor module, as the current sensor of the IGBT 1, the minute pattern 5 connected to the IGBT chip and the shunt resistor 6 connected to the minute pattern 5 are used. Since the output level of the current detection signal ic is low, sufficient detection accuracy cannot be obtained because of the use, the reliability of the protection function of the IGBT 1 is reduced, and heat is generated due to an increase in power consumption of the shunt resistor 6. There was a problem.

In addition, when a current detector such as a CT is used, it is difficult to secure an installation space, which is subject to design restrictions, and the main circuit voltage and current are affected by noise. there were.

Further, CT is used as a current sensor and I
Even if an attempt is made to obtain an electrical connection by soldering instead of wire bonding on the GBT1 chip, soldering becomes substantially impossible, and the cost is increased to ensure heat resistance in the soldering process. There was a problem.

The present invention has been made in order to solve the above-mentioned problems, and an object of the present invention is to provide a power semiconductor module having a current sensor which has high current detection accuracy and does not cause noise and installation space problems. With the goal.

[0025]

A power semiconductor module according to a first aspect of the present invention is a power semiconductor module in which a power semiconductor chip is housed in a module case, the power semiconductor module being electrically connected via a conductive resin. A device comprising: a plurality of conductive members; a current sensor provided on at least one of the conductive members; and a control circuit for controlling a gate voltage of the power semiconductor chip in accordance with an output level of a detection signal of the current sensor. It is.

According to a second aspect of the present invention, in the power semiconductor module according to the first aspect, the current sensor comprises:
The coil includes a coil formed of a toroidal winding, and the coil is formed in an annular shape so as to surround a current flowing through the conductive member provided with the current sensor.

According to a third aspect of the present invention, there is provided the power semiconductor module according to the second aspect, wherein an annular magnetic body formed along the toroidal winding is disposed inside the coil.

According to a fourth aspect of the present invention, in the power semiconductor module according to the third aspect, at least one gap is formed in the magnetic body.

According to a fifth aspect of the present invention, there is provided a power semiconductor module according to any one of the first to fourth aspects, wherein a base plate for mounting a power semiconductor chip and a base plate mounted on the base plate. A first circuit pattern for leading a gate electrode of the power semiconductor chip to the control circuit, and a second circuit pattern for leading an output line of the current sensor to the control circuit. And

According to a sixth aspect of the present invention, in the power semiconductor module according to the fifth aspect, the control circuit for controlling the power semiconductor chip is provided on the gate substrate and is connected to the control circuit via the control pin. The power semiconductor chip is connected to the first circuit pattern, is connected to the second circuit pattern via the detection pin, captures the detection signal of the current sensor via the second circuit pattern, and is connected to the power semiconductor chip via the first circuit pattern. A control signal is applied to the gate electrodes of the above.

According to a seventh aspect of the present invention, in the power semiconductor module according to the first aspect, the current sensor comprises:
It includes an annular magnetic body having at least one gap and a Hall element provided in the gap.

[0032] In the power semiconductor module according to claim 8 of the present invention, the conductive member provided with the current sensor according to any one of claims 1 to 7 includes:
A positioning unit for holding the current sensor is provided.

According to a ninth aspect of the present invention, in the power semiconductor module according to the ninth aspect, the positioning portion includes:
It is constituted by an annular flange formed so as to surround a current flowing through the conductive member provided with the current sensor.

According to a tenth aspect of the present invention, in the power semiconductor module according to the eighth aspect, the positioning portion is formed by an annular groove formed so as to surround a current flowing through the conductive member provided with the current sensor. It is composed.

According to a eleventh aspect of the present invention, there is provided a power semiconductor module according to any one of the first to tenth aspects, wherein the conductive member provided with the current sensor is wire-bonded via an insulating film. An output line of the current sensor is connected to the wire bonding pad by wire bonding, and a detection signal of the current sensor is derived from the output line via the wire bonding pad.

According to a twelfth aspect of the present invention, in the power semiconductor module according to any one of the first to eleventh aspects, an output circuit of the current sensor is provided on the conductive member provided with the current sensor. It was done.

According to a thirteenth aspect of the present invention, there is provided a power semiconductor module according to any one of the first to twelfth aspects, wherein the conductive member provided with the current sensor is connected to the power supply via a conductive resin. It is formed integrally with the emitter electrode of the semiconductor chip.

According to a fourteenth aspect of the present invention, in the power semiconductor module according to any one of the first to thirteenth aspects, the module case houses a plurality of power semiconductor chips formed of a parallel circuit. An electromagnetically coupled current sensor including a magnetic material is provided on at least one of the plurality of power semiconductor chips, and a power semiconductor chip other than the power semiconductor chip provided with the current sensor includes a current sensor. A magnetic body made of the same material as the magnetic body is arranged.

In a power semiconductor module according to a fifteenth aspect of the present invention, in any one of the first to fourteenth aspects, the power semiconductor chip comprises an IGBT chip.

[0040]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiment 1 Hereinafter, a first embodiment of the present invention will be described with reference to the drawings. Here, as described above, a case of a power semiconductor module using an IGBT chip as a power semiconductor chip will be described as an example.

FIG. 1 is a side sectional view showing a main part of the first embodiment of the present invention, and FIG. 2 is an enlarged plan view and a side sectional view showing a current sensor section in FIG. In FIG. 1, reference numeral 1 denotes an IGBT similar to that described above (see FIG. 15).
In FIG. 1, the gate electrode and the control circuit of the IGBT 1 are omitted.

Reference numeral 7 denotes a heat-dissipating base plate made of a metal having good heat-dissipating properties, such as aluminum or copper. 8
Is an insulating substrate fixed on the heat dissipation base plate 7 by soldering or the like, which is made of ceramics (alumina, aluminum nitride, or the like) to which a thin metal plate pattern of copper or the like is adhered on both sides, and on which the IGBT 1 is mounted ing.

The IGBT 1 has an emitter electrode 9 on its upper surface and a collector electrode 10 on its lower surface. The collector electrode 10 is electrically connected to a thin metal plate P1 (hereinafter, referred to as a “collector pattern”) on the insulating substrate 8 by a conductive material (not shown) such as solder.

Reference numeral 11 denotes a wiring electrode corresponding to the above-mentioned output terminal 1a, which is made of a metal material such as aluminum or copper and is electrically connected to a bus bar 11a which forms a main part of the main circuit. The wiring electrode 11 is, as shown in FIG.
It may be integrally formed with the bus bar 11a.

Reference numeral 12 denotes a conductive resin for electrically connecting the IGBT 1 to the wiring electrode 11 and is interposed between one end of the wiring electrode 11 and the emitter electrode 9 of the IGBT 1.
As the conductive resin 12 used here, for example,
A material using epoxy resin as a matrix material and using silver as a filler can be used, but both the matrix material and the filler are not limited to this material.

Reference numeral 13 denotes a coil-type current sensor provided on the wiring electrode 11. The coil used for the current sensor 13 includes a Rogowski coil or a CT (current transformer) type coil.
An example in which a toroidally wound air-core coil such as a Rogowski coil is used is shown.

Current sensor 13 composed of Rogowski coil
Are arranged such that the wiring electrode 11 penetrates inside the donut-shaped torus. Therefore, the coil of the current sensor 13 including the toroidal winding is formed in a ring shape so as to surround the current flowing through the wiring electrode 11. The space between the wiring electrode 11 and the current sensor 13 may be fixed with a resin or the like.

As shown in FIG. 1, a current sensor 13 (toroidal coil) is provided on a part of the wiring electrode 11 functioning as a bus bar 11a (main circuit member).
Is electrically connected to the emitter electrode 9 via a conductive resin 12.

That is, in the IGBT 1 (power semiconductor) chip, the emitter electrode 9 and the wiring electrode 11
The (conductive member) is electrically connected via a conductive resin 12, and the current sensor 13 is provided on the wiring electrode 11 (at least one of the conductive members).

The detection signal of the current sensor 13 is transmitted to the control circuit 4
(See FIG. 15), and the control circuit 4 controls the gate voltage of the power semiconductor chip according to the output level of the detection signal of the current sensor 13.

FIG. 2 schematically shows a basic structure of a current sensor 13 composed of a Rogowski coil. FIG. 2A is a plan view showing the current sensor 13 together with an output circuit, and FIG.
3 is a side sectional view of the current sensor 13. FIG.

In FIG. 2, ic and 4 are current detection signals and control circuits similar to those described above. As before,
The current detection signal ic obtained from the current sensor 13 is input to the control circuit 4, and the control circuit 4 controls the gate voltage of the IGBT 1 according to the output level of the current detection signal ic from the current sensor 13 to prevent overcurrent. To prevent.

Reference numeral i denotes a current flowing through the wiring electrode 11, reference numeral 14 denotes a coil winding of the current sensor 13 wound in a tridal manner, and the current i is detected by the coil winding 14 of the current sensor 13 by electromagnetic induction.

Reference numeral 15 denotes an output circuit of the current sensor 13, and reference numeral 16 denotes a resistor provided in the output circuit 15. Resistor 16
Is inserted between both ends of the coil winding 14, and the voltage between both ends of the resistor 16 is set as a current detection signal ic by the control circuit 4.
Is input to

Normally, the inside of the coil winding 14 of the current sensor 13 is filled with a non-magnetic material (not shown), so that the current sensor 13 (Rogowski coil)
Has an advantage that it is not magnetically saturated as compared with a current sensor using a magnetic material.

The current i flowing through the wiring electrode 11 passes through the center of the torus of the donut-shaped current sensor 13, but does not necessarily have to pass through the center. Further, since the principle of the Rogowski coil is described in various documents and electromagnetic texts, detailed description thereof will be omitted here.

Further, the output circuit 15 for generating the current detection signal ic is composed of only the resistor 16,
Other circuit configurations may be used according to the required specifications of the current sensor 13 and the current detection signal ic.

For example, a voltage is generated at both ends of the coil winding 14 in accordance with the time change of the magnetic flux generated by the current i passing through the inside of the torus. At this time, the inside of the Rogowski coil is filled with a non-magnetic medium. The current sensor 1
3 has a small self-inductance.

Therefore, the output signal of the current sensor 13 has a differential waveform with respect to the low-frequency component of the main circuit current i flowing through the wiring electrode 11, so that a desired main circuit current waveform is obtained in order to obtain a desired main circuit current waveform. Needs to be integrated. In this case, the output circuit 15 is constituted by an integrator.

However, when only the high frequency component of the current i is to be detected, integration is not required. Therefore, as shown in FIG. It is only necessary to provide the vessel 16.

In FIG. 1, conductive resin 12 used for electrical connection between emitter electrode 9 and wiring electrode 11 is shown.
As is well known, has excellent adhesion to not only aluminum but also many metal materials.

Therefore, the emitter electrode 9 of the IGBT 1
When the upper surface of the substrate and the wiring electrode 11 are joined with the conductive resin 12, sufficient electric characteristics can be secured, and a lower temperature process can be performed as compared with solder, so that the choice of materials that can be used for the current sensor 13 is expanded. Can be.

Further, since the IGBT 1 and the wiring electrode 11 are conducted through the conductive resin 12 instead of the wire bonding, the current sensor 13 disposed on the wiring electrode 11 can be used without dividing the current flowing through the IGBT 1. Can be detected directly.

That is, the wiring electrode 11 is connected to the upper surface of the emitter electrode 9 of the IGBT 1 via the conductive resin 12,
By arranging the current sensor 13 on the wiring electrode 11,
An extremely large current can be measured as compared with the conventional (see FIG. 15) current detection method using a sense chip including the micropattern 5.

Therefore, a current detection signal ic having a small noise and a large output level can be obtained, and a highly accurate measurement can be performed. Therefore, the overcurrent of the IGBT 1 can be detected with high reliability, and the IGBT 1 from the overcurrent can be detected. Can be reliably performed.

Further, by arranging the current sensor 13 on the upper surface side of the emitter electrode 9 of the IGBT 1, no special insulation measures are required, and the structure is less affected by a voltage change between the collector and the emitter. Noise countermeasures become unnecessary.

The wiring electrode 11 is selected as the conductive member on which the current sensor 13 is provided, and the IGB is used as the conductive member connected to the wiring electrode 11 via the conductive resin 12.
Since the emitter electrode 9 of T1 is selected and the wiring electrode 11 and the IGBT 1 are integrally formed on the upper surface of the emitter electrode 9, a sensor output with a large level and a small noise can be obtained.

This is because the emitter electrode 9 is generally used as a ground terminal of the control circuit 4, so that noise is not easily superimposed on the sensor output obtained from the wiring electrode 11 on the emitter electrode 9.

Although the case where one wiring electrode 11 is connected to one IGBT 1 chip has been described here,
The IGBT 1 and the wiring electrode 11 are not limited to one, and a plurality of IGBTs and wiring electrodes 11 may be connected. In this case, the current sensor 13 can be provided on one or more of the plurality of wiring electrodes 11, and a sufficiently accurate ammeter can be provided as described above.

Embodiment 2 In the first embodiment, attention is paid only to the connection relation of the peripheral portion of the IGBT 1 in the power semiconductor module, and as shown in FIG.
1 is integrated with the bus bar 11a, but the wiring electrode 11 and the bus bar may be electrically connected by wire bonding.

FIG. 3 is a side sectional view showing a second embodiment of the present invention in which the wiring electrode 11 and the bus bar are electrically connected via wires. The same components as those described above (see FIG. 1) are described. , The same reference numerals are used, and the detailed description is omitted.

In FIG. 3, reference numeral 18 denotes an emitter bus bar serving as a main circuit; 19, a relay board fixed to the heat dissipation base plate 7 by soldering or the like; and P2, a circuit pattern on the relay board 19. The emitter bus bar 18 is provided upright on the circuit pattern P2 of the relay board 19 by soldering or the like.

Reference numeral 20 denotes a main circuit wire, and the wiring electrode 1
1 and the circuit pattern P2,
The wiring electrode 11 and the emitter bus bar 18 are electrically connected.

Reference numeral 21 denotes a collector bus bar serving as a main circuit, which stands on the collector pattern P1 of the insulating substrate 8 by soldering or the like, and is electrically connected to the collector electrode of the IGBT1.

Reference numeral 22 denotes a gate substrate connected to the gate electrode of the IGBT 1, which is fixed on the heat radiation base plate 7 via solder or the like so as to be located on the opposite side of the relay substrate 19.

P3 and P4 are circuit patterns separately arranged on the gate substrate 22. Reference numeral 23 denotes a gate wire, which electrically connects a gate electrode (not shown) of the IGBT 1 and a circuit pattern P3 on the gate substrate 22.

Reference numeral 24 denotes an output line of the current sensor 13, which is electrically connected to the circuit pattern P4 on the gate substrate 22, and is connected to the control circuit 4 (FIG. 15) via the circuit pattern P4.
See).

In this case, the wiring electrode 11 formed in a block shape has one end connected to the emitter electrode 9 of the IGBT 1 via the conductive resin 12 and the other end connected to the main circuit wire 20.
Is connected to the emitter bus bar 18 via the. The current sensor 13 is provided on the wiring electrode 11 on the upper surface side of the emitter electrode 9 of the IGBT 1 as described above.

The relay board 19 and the gate board 22
As for the material and structure of the insulating substrate 8 for mounting the IGBT 1 (semiconductor chip), for example,
An insulating substrate made of ceramics such as alumina or aluminum nitride having a thin metal plate pattern of copper or the like adhered to both surfaces can be used.

In the case of the second embodiment of the present invention shown in FIG. 3, the current sensor 13 is arranged on the upper surface side of IGBT 1 in the same manner as described above (see FIG. 1). It works.

Assuming that the position of the current sensor 13 is
If it is set not on the upper surface side of the IGBT 1 but on the upper surface side of the collector pattern P1 indicated by the broken line area A in FIG. 3 or on the upper surface side of the relay board 19 indicated by the broken line area B, various problems may occur.

For example, when the current sensor 13 is
When it is arranged (on the collector pattern P1), the following problem occurs.

That is, the control circuit 4 for receiving the output signal of the current sensor 13 is set at a potential close to the emitter potential similarly to the gate drive circuit for the IGBT 1, but a high voltage is applied between the collector and the emitter. Therefore, it is necessary to take measures for insulating the current sensor 13.

Further, since the voltage between the collector and the emitter rapidly changes with the switching of the IGBT 1, a displacement current flows through the current sensor 13. This displacement current becomes a noise source, and the output of the current sensor 13 is output. An error occurs in the signal.

On the other hand, when the current sensor 13 is arranged in the dashed area B (on the relay board 19), the following problem occurs.

That is, in the vicinity of the relay board 19 and in the space from the relay board 19 to the IGBT 1, a strong magnetic field is generated due to the main circuit current, and this magnetic field changes rapidly with switching. There is a high possibility that noise will be superimposed on the output signal line of the sensor 13, and noise countermeasures for the current sensor 13 will be required separately.

However, as described above (see FIGS. 1 and 3), the current sensor 13 can be arranged on the IGBT 1 by using the electrical connection structure via the conductive resin 12, so that Such noise measures for the current sensor 13 are not required.

As shown in FIG. 3, the output line 24 of the current sensor 13 is arranged in the same direction (gate wiring side) as the gate wire 23, and the gate substrate 22 is shared as a sensor output substrate. Since the output signal of the current sensor 13 has a structure that is hardly affected by switching noise, noise countermeasures for the current sensor 13 are further unnecessary.

Embodiment 3 In the first embodiment,
In 2, the current sensor 13 is formed of an air-core coil (Rogowski coil) formed of a toroidal winding, but may be formed of a CT-type coil in which a magnetic material is interposed in the toroidal winding.

FIG. 4 is a side sectional view schematically showing a current sensor 13 according to a third embodiment of the present invention using a CT-type coil. The planar shape and output circuit 15 are as shown in FIG. It is. FIG. 5 shows the current sensor 13 shown in FIG.
FIG. 3 is a side sectional view showing a state in which is mounted on a wiring electrode 11.

In FIG. 4, reference numeral 25 denotes an annular magnetic body, which is provided along the toroidal winding coil of the current sensor 13a. That is, the current sensor 13 made of CT is configured by a coil that is toroidally wound around the outer periphery of the annular magnetic body 25.

As described above, by disposing the magnetic body 25 in the coil of the current sensor 13, the self-inductance of the coil increases, and an output signal proportional to the main circuit current i is obtained over a relatively wide frequency range. be able to.

Therefore, the output circuit 15 connected to the coil output terminal of the current sensor 13 only needs to have a configuration in which the resistor 16 is connected to both ends of the coil as shown in FIG. Is set to be proportional to the main circuit current i, so that the above-described integrator becomes unnecessary.

Although the magnetic body 25 in the CT coil is formed in a continuous ring here, at least one gap (not shown) may be provided at an arbitrary position. By providing such a gap, the magnetic resistance of the magnetic body 25 increases, and magnetic saturation of the magnetic body 25 is less likely to occur, so that the detection range of the current sensor 13 can be expanded.

Embodiment 4 It should be noted that the first to the first embodiments
In FIG. 3, the shape of the wiring electrode 11 at the portion where the current sensor 13 is mounted is not described in detail.
May be provided with a positioning section for the current sensor 13.

FIGS. 6 and 7 are side sectional views showing a main part of the fourth embodiment of the present invention in which a positioning portion for the current sensor 13 is provided on the wiring electrode 11. In each of the drawings, the same components as those described above are shown. Are denoted by the same reference numerals and their detailed description is omitted.

In FIG. 6, reference numeral 11A denotes a step formed on the wiring electrode 11 and constitutes a positioning portion for mounting the current sensor 13. Similarly, in FIG.
11B is a flange formed on the wiring electrode 11,
It constitutes a positioning part for mounting the current sensor 13.

As shown in FIG. 6 and FIG.
By providing the step portion 11A or the flange portion 11B for mounting and positioning the current sensor 13, the installation of the current sensor 13 is facilitated, and the manufacturing cost can be reduced.

When the flange portion 11B is formed as shown in FIG. 7, the outer shape of the current sensor 13 can be set large, so that the connection area between the wiring electrode 11 and the main circuit connected to the upper surface thereof is increased. Can be greatly increased.

Embodiment 5 FIG. In the fourth embodiment, the positioning portion of the current sensor 13 is configured by the step portion 11A or the flange portion 11B. However, the positioning portion may be configured by a groove portion that can accommodate the current sensor 13.

Hereinafter, a fifth embodiment of the present invention in which the positioning portion of the current sensor 13 is formed by a groove will be described. FIG. 8 is a side sectional view showing a main part of a power semiconductor module according to Embodiment 5 of the present invention, in which an output circuit 15 of current sensor 13 and the like are omitted, and the same components as those described above have the same reference numerals. And the detailed description is omitted.

In FIG. 8, reference numeral 11C denotes an annular groove provided along the outer periphery of the wiring electrode 11, in which the current sensor 13 is housed as indicated by a dashed arrow, and the current sensor 13 is positioned. ing.

As shown in FIG. 8, by forming the positioning portion of the current sensor 13 with the groove 11C, the current sensor 13
Of the groove 11C surrounding the periphery of the current sensor 13
Acts as a shield against

Therefore, the collector of the current sensor 13
It is possible to suppress not only the voltage change between the emitters but also the influence of the electrostatic induction noise due to the voltage change between the emitter electrode 9 of the current sensor 13 and the heat dissipation base plate 7, and the like. Can be improved.

Embodiment 6 FIG. In the fifth embodiment, the current sensor 13 is a Rogowski coil having an air core. However, similarly to the third embodiment, a CT type coil having a magnetic body in the coil winding may be used. The current sensor 13 is formed by a Hall element interposed in the gap of the magnetic material.
May be configured.

FIG. 9 schematically shows a sixth embodiment of the present invention in which the current sensor 13 in the groove 11C is formed of a magnetic material and a Hall element. FIG. 9A is a plan view, and FIG.
Is a side sectional view. FIG. 10 is a block diagram showing the Hall element in FIG. 9 together with peripheral circuits.

In FIG. 9, 11, 11C, 13 and 25 are the same as those described above. 25G is a magnetic material 25
A gap 27 provided in at least a part of the hole element 27 is a Hall element provided in the gap 25G. In this case, the current sensor 13 includes the magnetic body 25 and the Hall element 2.
7 and no coil is required.

In FIG. 10, H is a magnetic field penetrating the Hall element 27, and is generated between the gaps 11C of the magnetic body 11 when the current i flowing through the wiring electrode 11 is detected. 28
Is a constant current power supply connected to the input side of the Hall element 27, and supplies a constant current io.

Reference numeral 29 denotes an amplifier connected to the output side of the Hall element 27. The current detection signal ic amplified via the amplifier 29 is transmitted to the control circuit 4 (see FIG. 15). The constant current power supply 28 and the amplifier 29
7 input / output circuits.

Here, specific input lines and output lines connected to the Hall element 27 are omitted. Also,
The specific operation of the Hall element 27 including the input / output circuit of FIG. 10 is described in various documents, electromagnetic texts, and the like, and will not be described in detail here.

As described above, even when the Hall element 27 is used as the current sensor 13, it is possible to perform more accurate measurement as compared with the conventional current detection method using a sense chip. Further, as described above, the emitter electrode 9 of the IGBT 1 is formed.
Since the current sensor 13 is disposed on the surface (see FIG. 8), no special insulation measures are required.

Further, since the Hall element 27 is arranged in the groove 11C of the wiring electrode 11, the wiring electrode 11 functions as a shield, and noise caused by a voltage change between the collector and the emitter of the IGBT 1 and between the base plate and the emitter of the IGBT 1 is reduced. The effect can be prevented. Further, as described above (see FIG. 3), if the output line 24 of the current sensor 13 is arranged on the gate wiring side, the influence of switching noise can be prevented.

Embodiment 7 FIG. Although the specific configuration of the output line of the current sensor 13 has not been described in the fifth embodiment, a wire bonding pad for outputting the current detection signal ic is provided at the output terminal of the current sensor 13. Is also good.

FIG. 11 is a plan view showing a seventh embodiment of the present invention in which a wire bonding pad is provided at the output terminal of the current sensor 13. Here, the case where the current sensor 13 is a coil type is shown, but the Hall element 27 (FIG.
It is also applicable when using FIG.

In FIG. 11, the same components as those described above (see FIG. 3) are denoted by the same reference numerals, and detailed description is omitted. 30 is a pair of wire bonding pads,
It is provided on the wiring electrode 11 via the insulating film 31.

Each wire bonding pad 30 has
Both ends of the coil of the current sensor 13 are connected by wire bonding. The insulating film 31 insulates between the wire bonding pad 30 and the wiring electrode 11.

In this case, the output signal of the current sensor 13 is
The transmission is performed by connecting the wire bonding pad 30 on the wiring electrode 11 and the circuit pattern P4 on the gate substrate 22 by wire bonding. Therefore, the sensor output signal can be derived only by the wire bonding operation, and the assembly of the power semiconductor module can be facilitated.

Embodiment 8 FIG. It should be noted that the first to the first embodiments
In FIG. 7, the specific arrangement of the output circuit of the current sensor 13 is not described, but the output circuit may be provided on the conductive member on which the current sensor 13 is provided, that is, the wiring electrode 11.

FIGS. 12A and 12B show an eighth embodiment of the present invention in which an output circuit 15 is provided on the wiring electrode 11, wherein FIG. 12A is a plan view and FIG. 12B is a side sectional view. Here, for convenience, the case where the coil-shaped current sensor 13 is housed in the groove 11C is shown, but the present invention can be similarly applied to the case where the current sensor 13 having another configuration is used.

In FIG. 12, the same components as those described above are denoted by the same reference numerals, and detailed description is omitted. Although not shown in the figure, the gate substrate 22 is provided on the heat dissipation base plate 7 (see FIG. 3), and the output circuit 15 transfers the circuit pattern P4 on the gate substrate 22 to the circuit pattern P4 on the gate substrate 22. It is assumed that the gate wire 23 is led out.

In this case, the output circuit 15 of the current sensor 13
Are provided on the insulating film 31 on the wiring electrode 11, and the wire bonding pads 30 are provided on the output circuit 15. Therefore, the output circuit 15 and the wire bonding pad 30 are insulated from the wiring electrode 11 via the insulating film 31.

Here, the case where the resistor 16 connected between both ends of the coil of the current sensor 13 is used as the output circuit 15 is shown. However, another circuit configuration such as an integrator (not shown) is used. May be used.

As described above, the output circuit 1 is provided on the wiring electrode 11.
By providing 5, the current sensor 13 can be downsized. Therefore, the assembling work at the time of assembling the power semiconductor module can be facilitated.

Embodiment 9 FIG. It should be noted that the first to the first embodiments
In FIG. 8, a single IGBT 1 is connected to the wiring electrode 11, but a plurality of IGBTs arranged in parallel may be connected. Generally, IGBTs connected in parallel are used to cope with a case where the current of the main circuit is extremely large.

FIG. 13 is a plan view showing a ninth embodiment of the present invention in which a plurality of IGBTs are connected to the wiring electrodes 11. Components similar to those described above are designated by the same reference numerals and detailed description. Omitted.

In FIG. 13, reference numerals 1A to 1C denote a plurality of IGBTs connected in parallel to each other, and constitute a plurality of power semiconductor chips formed of parallel circuits. here,
Although three IGBTs 1A to 1C are juxtaposed, any number of IGBTs can be juxtaposed.

Each of the IGBTs 1A to 1C is, as described above,
The power semiconductor module is housed in a module case (not shown). At least one IGBT 1A of the plurality of IGBTs 1A to 1C has a magnetic material 25
Are provided.

Also, the IGBT 1 having the current sensor 13
On the power semiconductor chips 1B and 1C other than A, a magnetic material 25 of the same material as the magnetic material of the current sensor 13 is arranged.

IGBTs connected in parallel as shown in FIG.
When the current sensor 13 having the magnetic body 25 is disposed only in one of the IGBTs 1A to 1C, temporarily
If the magnetic body 25 is not provided in the BTs 1B and 1C,
Due to the influence of the insertion impedance of the magnetic body 25 of the current sensor 13, the shunt characteristics of the IGBTs 1A to 1C connected in parallel may deteriorate.

Therefore, in order to avoid the occurrence of such imbalance of the shunt current, the current sensor 1 is provided for the IGBTs 1B and 1C in which the current sensor 13 is not provided.
A magnetic body 25 similar to the third magnetic body 25 is disposed.

If the current sensor 13 includes the magnetic body 25 and the Hall element 27 (see FIG. 9), only the magnetic body 25 needs to be provided in the IGBTs 1B and 1C.

When the current sensor 13 is formed of a CT coil including the magnetic body 25, the IGBT
1B and 1C include not only the magnetic material 25 but also the current sensor 1
It is desirable to arrange a coil similar to that of No. 3 and to connect a resistor 16 similar to the output circuit 15 of the current sensor 13 to both ends of the coil.

As described above, by disposing magnetic body 25 similar to current sensor 13 in IGBTs 1B and 1C in which current sensor 13 is not provided, current sensor 13
Can be prevented from being imbalanced due to the influence of the insertion impedance.

Embodiment 10 FIG. In the first embodiment,
9 do not refer to a specific connection structure between the gate substrate 22 and the control circuit 4,
A conduction pin may be interposed between the upper circuit patterns P3 and P4 and the control circuit 4.

FIG. 14 is a side sectional view showing a tenth embodiment of the present invention in which a control circuit is provided on a gate substrate via pins, and the same components as those described above (see FIG. 3) are denoted by the same reference numerals. The detailed description is omitted. In addition, the current sensor 13
As described above, those having high noise immunity are used.

In FIG. 14, reference numeral 33 denotes a control pin for electrically connecting the control circuit 4 to the circuit pattern P3 on the gate substrate 22, and receives a gate control signal from the control circuit 4 via the circuit pattern P3 and the gate wire 23. IGBT1
To the gate electrode. Although omitted here, the control pin 33 includes a ground terminal pin connected to the emitter electrode 9.

Reference numeral 34 denotes a detection pin for conducting the control circuit 4 and the circuit pattern P4 on the gate substrate 22, and detects a current detection signal input from the current sensor 13 through the output line 24 and the circuit pattern P4. Introduce to 4.

By conducting the control circuit 4 and the circuit patterns P3 and P4 through the pins 33 and 34 in this way, the control circuit 4 allows the gate of the IGBT 1 to respond to the current detection signal from the current sensor 13. The electrodes can be controlled.

For example, the control circuit 4 controls the current sensor 13
The level of the current detection signal received from the
If the current flowing in T1 indicates an overcurrent, a process such as turning off the IGBT1 by a gate control signal to cut off the overcurrent is performed.

As shown in FIG. 14, the current of the IGBT 1 is measured with high accuracy by using the current sensor 13 having high noise immunity and arranging the control circuit 4 on the side of the gate substrate 22 which is not easily affected by noise. IGBT according to the main circuit current by the control circuit 4.
When performing the control of (1), a very accurate overcurrent protection operation can be performed.

In FIG. 14, the control circuit 4 is disposed directly above the gate substrate 22 and both are electrically connected via the pins 33 and 34. However, the control circuit 4 is located on the same plane as the gate substrate 22. In this case, the connection may be made by wire bonding instead of the pins 33 and 34.

[0142]

As described above, according to the first aspect of the present invention, in a power semiconductor module in which a power semiconductor chip is housed in a module case, a plurality of conductive semiconductors electrically connected via a conductive resin are provided. A conductive member, a current sensor provided on at least one of the conductive members, and a control circuit for controlling a gate voltage of the power semiconductor chip according to an output level of a detection signal of the current sensor.
There is an effect that a power semiconductor module including a current sensor that has high current detection accuracy and does not cause problems of noise and installation space can be obtained.

According to a second aspect of the present invention, in the first aspect, the current sensor includes a coil formed of a toroidal winding, and the coil surrounds a current flowing through the conductive member provided with the current sensor. Since it is formed in a ring shape as described above, there is an effect that a power semiconductor module including a current sensor that has high current detection accuracy and does not cause a problem of noise or installation space can be obtained.

Further, according to the third aspect of the present invention, in the second aspect, the annular magnetic body formed along the toroidal winding is disposed inside the coil, so that the current detection level can be increased. The current detection accuracy is high,
There is an effect that a power semiconductor module including a current sensor that does not cause a problem of noise or installation space can be obtained.

According to a fourth aspect of the present invention, in the third aspect, since at least one gap is formed in the magnetic body, magnetic saturation can be suppressed, current detection accuracy is high, and There is an effect that a power semiconductor module including a current sensor that does not cause a problem of noise or installation space can be obtained.

According to a fifth aspect of the present invention, in any one of the first to fourth aspects, a base plate for mounting a power semiconductor chip, and a gate substrate mounted on the base plate And a first substrate for leading a gate electrode of the power semiconductor chip to a control circuit.
And the second circuit pattern for leading the output line of the current sensor to the control circuit, the effect of noise can be suppressed, the current detection accuracy is high,
There is an effect that a power semiconductor module including a current sensor that does not cause a problem of noise or installation space can be obtained.

According to a sixth aspect of the present invention, in the fifth aspect, the control circuit for controlling the power semiconductor chip is provided on the gate substrate, and is connected to the first circuit via the control pin. Conducted to the pattern, conducted to the second circuit pattern via the detection pin, fetched the detection signal of the current sensor via the second circuit pattern, and received the gate electrode of the power semiconductor chip via the first circuit pattern. Since a control signal is applied to the power semiconductor module, the effect of noise can be suppressed, the current detection accuracy is high, and a power semiconductor module having a current sensor that does not cause problems of noise and installation space can be obtained.

According to a seventh aspect of the present invention, in the first aspect, the current sensor includes an annular magnetic body having at least one gap, and a Hall element provided in the gap. The detection level can be increased, the current detection accuracy is high, and there is an effect that a power semiconductor module including a current sensor that does not cause a problem of noise or installation space can be obtained.

According to the eighth aspect of the present invention, in any one of the first to seventh aspects, the conductive member provided with the current sensor has a positioning portion for holding the current sensor. Since it is provided, the assemblability is improved, the current detection accuracy is high, and there is an effect that a power semiconductor module including a current sensor that does not cause a problem of noise or installation space is obtained.

According to a ninth aspect of the present invention, in the eighth aspect, the positioning portion is constituted by an annular flange portion formed so as to surround a current flowing through the conductive member provided with the current sensor. Therefore, it is possible to increase the connection area with the main circuit, obtain high power detection accuracy, and obtain a power semiconductor module including a current sensor that does not cause noise or installation space problems.

According to a tenth aspect of the present invention, in the eighth aspect, the positioning portion is constituted by an annular groove formed so as to surround a current flowing through the conductive member provided with the current sensor. Therefore, the effect of noise can be further suppressed by the shielding action of the groove, and the power semiconductor module having a current sensor with high current detection accuracy and no noise or installation space problem can be obtained.

According to the eleventh aspect of the present invention, in any one of the first to tenth aspects, the conductive member provided with the current sensor is provided with a wire bonding pad via an insulating film. The output line of the current sensor is connected to the wire bonding pad by wire bonding, and the detection signal of the current sensor is derived from the output line via the wire bonding pad, so that assemblability is improved. , High current detection accuracy,
There is an effect that a power semiconductor module including a current sensor that does not cause a problem of noise or installation space can be obtained.

According to a twelfth aspect of the present invention, in any one of the first to eleventh aspects, the conductive member provided with the current sensor is provided with the output circuit of the current sensor. In addition, it is possible to obtain a power semiconductor module provided with a current sensor that has improved assemblability and is downsized, has high current detection accuracy, and does not cause noise or installation space problems.

According to a thirteenth aspect of the present invention, in any one of the first to twelfth aspects, the conductive member provided with the current sensor is provided with a conductive resin interposed therebetween.
Since it is formed integrally with the emitter electrode of the power semiconductor chip, it is possible to obtain a power semiconductor module provided with a current sensor that has high current detection accuracy and does not cause noise or installation space problems.

According to a fourteenth aspect of the present invention, in any one of the first to thirteenth aspects, the module case houses a plurality of power semiconductor chips formed of a parallel circuit. At least one of the power semiconductor chips is provided with an electromagnetically coupled current sensor including a magnetic material, and the power semiconductor chips other than the power semiconductor chip provided with the current sensor are provided with a magnetic material of the current sensor. Since the magnetic material made of the same material is arranged, the imbalance between the power semiconductor chips due to the sensor insertion impedance can be eliminated, the current detection accuracy is high, and there is no noise or installation space problem. There is an effect that a power semiconductor module provided with

According to a fifteenth aspect of the present invention, in any one of the first to fourteenth aspects, the power semiconductor chip is constituted by an IGBT chip, so that the current detection accuracy is high, and noise and installation noise are reduced. There is an effect that a power semiconductor module including a current sensor that does not cause a space problem can be obtained.

[Brief description of the drawings]

FIG. 1 is a side sectional view showing a main part of a first embodiment of the present invention.

FIG. 2 is a plan view and a side sectional view showing a circuit configuration of the current sensor according to the first embodiment of the present invention.

FIG. 3 is a side sectional view showing a main part of a second embodiment of the present invention.

FIG. 4 is a side sectional view showing a circuit configuration of a current sensor according to a third embodiment of the present invention.

FIG. 5 is a side sectional view showing a peripheral configuration of a current sensor according to Embodiment 3 of the present invention.

FIG. 6 is a side sectional view showing a positioning unit according to a fourth embodiment of the present invention.

FIG. 7 is a side sectional view showing a flange portion according to a fourth embodiment of the present invention.

FIG. 8 is a side sectional view showing a main part having a groove according to a fifth embodiment of the present invention.

FIG. 9 is a plan view and a side sectional view showing a peripheral configuration of a Hall element according to a sixth embodiment of the present invention.

FIG. 10 is a block diagram showing a circuit configuration around a Hall element according to a sixth embodiment of the present invention.

FIG. 11 is a plan view showing a peripheral configuration of a current sensor according to a seventh embodiment of the present invention.

FIG. 12 is a plan view and a side sectional view showing a peripheral configuration of a current sensor according to an eighth embodiment of the present invention.

FIG. 13 is a plan view showing a main part of a ninth embodiment of the present invention.

FIG. 14 is a side sectional view showing a main part of a tenth embodiment of the present invention.

FIG. 15 is a circuit block diagram schematically showing a conventional power semiconductor module.

[Explanation of symbols]

1, 1A-1C IGBT (power semiconductor chip), 4
Control circuit, 7 heat dissipation base plate, 8 insulating substrate, 9
Emitter electrode (conductive member), 10 Collector electrode, 1
DESCRIPTION OF SYMBOLS 1 Wiring electrode (conductive member), 11A step part (positioning part), 11B flange part, 11C groove part, 12 conductive resin, 13 current sensor, 14 coil, 15 output circuit, 16 resistor, 22 gate substrate, 23 gate Wire, 24 output lines, 25 magnetic material, 25 G gap, 27 Hall element, 30 wire bonding pad, 31 insulating film, 33 control pin, 34 detection pin, H Magnetic field penetrating Hall element, i current, ic
Current detection signal, P1 collector pattern, P3 first circuit pattern, P4 second circuit pattern.

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Toshiyuki Kikunaga 2-3-2 Marunouchi, Chiyoda-ku, Tokyo Inside Mitsubishi Electric Corporation (72) Inventor Mitsugu Takahashi 2-3-2 Marunouchi, Chiyoda-ku, Tokyo (72) Inventor Shinichi Kinouchi 2-3-2 Marunouchi, Chiyoda-ku, Tokyo Mitsui Electric Corporation (72) Inventor Takeshi Horiguchi 2-3-2 Marunouchi, Chiyoda-ku, Tokyo Inside Electric Co., Ltd. (72) Inventor Osamu Usui 2-3-2 Marunouchi, Chiyoda-ku, Tokyo Mitsubishi Electric Co., Ltd. (72) Insider Tatsuya Okuda 2-3-2 Marunouchi, Chiyoda-ku, Tokyo Mitsubishi Electric Co., Ltd. In-house F term (reference) 2G025 AA01 AA05 AA07 AB02 AB14 2G035 AA16 AA27 AC00 AD00 AD18 AD56 AD66

Claims (15)

[Claims] 1. A power semiconductor module in which a power semiconductor chip is housed in a module case, a plurality of conductive members electrically connected via a conductive resin, and provided on at least one of the conductive members. And a control circuit for controlling a gate voltage of the power semiconductor chip according to an output level of a detection signal of the current sensor. 2. The current sensor includes a coil formed of a toroidal winding, and the coil is formed in a ring shape so as to surround a current flowing through a conductive member provided with the current sensor. The power semiconductor module according to claim 1. 3. The power semiconductor module according to claim 2, wherein an annular magnetic body formed along the toroidal winding is disposed inside the coil. 4. The power semiconductor module according to claim 3, wherein at least one gap is formed in said magnetic body. 5. A power supply device comprising: a base plate on which the power semiconductor chip is mounted; and a gate substrate mounted on the base plate, wherein the gate substrate connects a gate electrode of the power semiconductor chip to the control circuit. 5. The circuit according to claim 1, further comprising: a first circuit pattern for deriving an output line of the current sensor; and a second circuit pattern for deriving an output line of the current sensor to the control circuit. 6. A power semiconductor module according to item 1. 6. A control circuit for controlling the power semiconductor chip, the control circuit being disposed on the gate substrate, being electrically connected to the first circuit pattern via a control pin, and being connected to the control circuit via a detection pin. Conducting to a second circuit pattern, capturing a detection signal of the current sensor via the second circuit pattern, and applying a control signal to a gate electrode of the power semiconductor chip via the first circuit pattern The power semiconductor module according to claim 5, wherein: 7. The power semiconductor module according to claim 1, wherein the current sensor includes an annular magnetic body having at least one gap and a Hall element disposed in the gap. 8. The conductive member provided with the current sensor, wherein a positioning portion for holding the current sensor is provided. Power semiconductor module. 9. The power according to claim 8, wherein the positioning portion is constituted by an annular flange portion formed so as to surround a current flowing through a conductive member provided with the current sensor. Semiconductor module. 10. The power semiconductor according to claim 8, wherein the positioning portion is constituted by an annular groove formed so as to surround a current flowing through a conductive member provided with the current sensor. module. 11. A conductive member provided with the current sensor is provided with a wire bonding pad via an insulating film, and an output line of the current sensor is connected to the wire bonding pad by wire bonding. The power semiconductor module according to any one of claims 1 to 10, wherein a detection signal of the current sensor is derived from the output line via the wire bonding pad. 12. The power semiconductor module according to claim 1, wherein an output circuit of the current sensor is provided on the conductive member provided with the current sensor. . 13. The power supply device according to claim 1, wherein the conductive member provided with the current sensor is integrally formed with the emitter electrode of the power semiconductor chip via the conductive resin. 13. The power semiconductor module according to any one of the items up to 12. 14. The module case contains a plurality of power semiconductor chips formed of a parallel circuit, and at least one of the plurality of power semiconductor chips.
First, an electromagnetically coupled current sensor including a magnetic material is provided. Power semiconductor chips other than the power semiconductor chip provided with the current sensor are provided with a magnetic material made of the same material as the magnetic material of the current sensor. 14. The power semiconductor module according to claim 1, wherein the power semiconductor module is disposed. 15. The power semiconductor chip is an IGBT.
15. The power semiconductor module according to claim 1, wherein the power semiconductor module comprises a chip.