JP2000164748A - Semiconductor device and manufacture thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To realize a semiconductor device, which has a hermetically sealed space between a silicon substrate and a glass lid, simple in structure, easily manufactured through a simple method, where oxygen gas left in the hermetivcally sealed space is decreased as much as possible, so as to give a sealed space of high vacuum. SOLUTION: A semiconductor device has a nearly vacuum hermetically sealed space S between a board 10 and a glass lid 60 by bonding the underside 63 of the glass lid 60 to the board 10 through anodic bonding. A protrudent part 65 which is formed like a triangle in cross section nearly at the widthwise center of the underside 63 of the sidewall 62 of the glass lid 60 protruding from the underside 63 is continuously provided over the entire circumference of the sidewall 62. Therefore, a line contact is made at an anodic joint between the top 64 of the protrudent part 65 and the upside of a frame 20, so that the joint becomes small in joint area, and oxygen flowing into the hermetically sealed space S by anodic bouding can be reduced in volume.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device in which a glass lid is anodically bonded to a silicon substrate to form a substantially vacuum sealed space between the silicon substrate and the glass lid, and a method of manufacturing the same.

[0002]

2. Description of the Related Art Conventionally, in the manufacture of this type of semiconductor device, as shown in, for example, Japanese Patent Application Laid-Open No. 10-144935, a glass lid having a through hole for venting is anodically bonded to a silicon substrate. Later, the through-hole is sealed by anodic bonding the sealing substrate to the through-hole in a vacuum, and oxygen remaining by anodic bonding in a closed space formed between the silicon substrate and the glass lid is removed. I tried to minimize it.

[0003]

However, in the above-mentioned conventional semiconductor device, the through-hole provided in the glass lid is closed with the sealing substrate, and it is necessary to perform the anodic bonding twice, so that the device itself is not provided. There has been a problem that the configuration becomes complicated and production efficiency is poor.

[0004]

SUMMARY OF THE INVENTION The present invention has been made to address the above problems, and has as its object to reduce the degree of vacuum by reducing the amount of oxygen remaining in an enclosed space by a simple structure and a simple manufacturing method. An object of the present invention is to provide a semiconductor device in which a high sealed space is formed.

To achieve the above object, a feature of the present invention is a semiconductor device in which a glass cover is anodically bonded to a silicon substrate to form a substantially vacuum sealed space between the silicon substrate and the glass cover. The anodic joint between the bottom surface of the glass lid and the top surface of the silicon substrate is formed by line contact. For example, the bonding portion on the silicon substrate side may be a flat surface, and the bonding portion on the glass lid side may be a top portion where two surfaces intersect. Alternatively, the bonding portion on the silicon substrate side may be a top portion where two surfaces intersect, and the bonding portion on the glass lid side may be a flat surface.

In the present invention having the above-described structure, at the time of anodic bonding, since the anodic bonding portion between the glass lid and the silicon substrate is formed by line contact, the bonding area between the glass lid and the silicon substrate is reduced. Since the amount of oxygen generated by the anodic bonding between the glass lid and the silicon substrate is reduced, the amount of oxygen flowing into the closed space is reduced. on the other hand,
The present invention does not use a glass lid and a sealing substrate having a through hole for degassing as in the above-described conventional apparatus, and does not need to perform anodic bonding twice. Therefore, according to the present invention, a semiconductor device that maintains a high degree of vacuum in a sealed space can be easily configured and easily manufactured.

Another feature of the present invention is a method of manufacturing a semiconductor device in which a glass cover is anodically bonded to a silicon substrate to form a substantially vacuum sealed space between the silicon substrate and the glass cover. This is because the bottom surface of the lid and the top surface of the silicon substrate are brought into line contact with each other to perform anodic bonding. For example, a top part where two surfaces intersect is formed on a part of the bottom surface of the glass lid,
What is necessary is just to implement | achieve a line contact by making a top part contact the upper surface of a silicon substrate. Alternatively, a top portion where two surfaces intersect may be formed on a part of the top surface of the silicon substrate, and the line contact may be realized by bringing the top portion into contact with the bottom surface of the glass lid. According to such a manufacturing method, a semiconductor device that maintains a high degree of vacuum in a closed space can be easily manufactured as described above.

The line contact used in this specification does not mean geometrically perfect line contact, but a state almost close to line contact, that is, the width of the joint is the thickness of the glass lid. It is extremely narrow compared to the thickness (or width) (the ratio of the width of the joint to the thickness (or width) of the glass lid is about 1/5 or less, or the width of the joint is 100 μm or less). means.

[0009]

DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described with reference to the drawings. FIG. 1A is a schematic plan view of a semiconductor device according to the embodiment, and FIG. B1-B1
FIG. 4 is an end view along a line.

This semiconductor device includes a substrate 10 formed in a square shape of silicon, a rectangular frame 20 having a predetermined width and fixed to a peripheral portion of an upper surface of the substrate 10 and formed of p-type silicon. It has. Note that the substrate 10 and the frame 20 constitute the silicon substrate of the present invention.

On the inside of the frame 20 and on the substrate 10,
A vibrator 30 is provided floating above the upper surface by a small predetermined distance. The vibrator 30 is formed of n-type silicon in a substantially rectangular shape, is connected to the vibrator 30 at each inner end, and has an inner surface 20a of the frame 20 at each outer end.
Are supported by the beams 11a to 11d connected to the inside of the frame body 20 so as to be able to vibrate in the X-axis direction (left-right direction in FIG. 1A) and the Y-axis direction (vertical direction in FIG. 1A). I have. The beams 11a to 11d are formed in the substantially L-shape from the same material as the vibrator 30, and float from the upper surface of the substrate 10 by the small predetermined distance similarly to the vibrator 30. The vibrator 3
0 has a plurality of through holes.

A substrate 1 is provided on each outer side of the vibrator 30 in the X-axis direction.
A plurality of electrode fingers 40a and 40b are provided, each of which is fixed on the first electrode 0, and each of the plurality of electrode fingers 40a and 40b extends in the X-axis direction and is arranged at equal intervals in the Y-axis direction. It has. Further, each of the comb-tooth electrodes 40a, 40
Pad portions 41a and 41b fixed to the substrate 10 and connected to the comb-shaped electrodes 40a and 40b, respectively, are provided on the outer sides of the b portion in the X-axis direction, respectively.
Electrode pads 42a and 42b formed in a rectangular shape with a conductive metal (for example, aluminum) are provided on a and 41b, respectively.

A vibrator 3 is provided on the side of the vibrator 30 in the X-axis direction.
Similarly to the case 0, comb-shaped electrodes 31a and 31b are provided, each of which is floating above the substrate 10 by a predetermined distance and formed integrally with the vibrator 30. Each of the comb-shaped electrodes 31a and 31b includes a plurality of electrode fingers extending outward in the X-axis direction and arranged at equal intervals in the Y-axis direction. The electrode 40b has entered the center position in the width direction (Y-axis direction) between the electrode fingers. The comb-shaped electrodes 40a and 40b constitute a driving unit for the vibrator 30 together with the comb-shaped electrodes 31a and 31b.
0 is excited in the X-axis direction by electrostatic attraction when a driving signal is applied to the comb-shaped electrodes 40a and 40b.

A substrate 1 is provided on each outer side of the vibrator 30 in the Y-axis direction.
A plurality of electrode fingers 50a, 50b are provided, each of which is fixed on the first electrode 0, and each of the plurality of electrode fingers 50a, 50b extends in the Y-axis direction and is arranged at equal intervals in the X-axis direction. It has. Further, each of the comb-tooth electrodes 50a, 50
Pad portions 51a and 51b fixed on the substrate 10 and connected to the comb-shaped electrodes 50a and 50b, respectively, are provided on the respective outer sides in the Y-axis direction of b.
Electrode pads 52a, 52b formed of a conductive metal (for example, aluminum) in a rectangular shape are provided on a, 51b, respectively.

A vibrator 3 is provided on the side of the vibrator 30 in the Y-axis direction.
As in the case of 0, comb-shaped electrodes 32a and 32b are provided, each of which is floated from the substrate 10 by a predetermined distance and formed integrally with the vibrator 30. The comb-shaped electrodes 32a and 32b each include a plurality of electrode fingers extending outward in the Y-axis direction and arranged at equal intervals in the X-axis direction. 50b intrudes into the center position in the width direction (X-axis direction) between the electrode fingers. The comb-shaped electrodes 50a and 50b together with the comb-shaped electrodes 32a and 32b constitute a detection unit for the vibrator 30.
0 is used to detect vibration in the Y-axis direction.

On the substrate 10, there is provided a pad portion 12 fixed on the substrate 10 and connected to the beam 11c. The pad portion 12 is formed in a square shape with a conductive metal (eg, aluminum) on the pad portion 12. Electrode pad 13 is provided.

At the inner peripheral edge of the upper surface of the frame 20, beams 11a to 1
1d, vibrator 30, comb-shaped electrodes 31a, 31b, 32
a, 32b and comb-shaped electrodes 40a, 40b, 50a, 5
A rectangular glass lid 60 is fixed by anodic bonding so as to cover Ob. The glass lid 60 has a square top plate 61.
And a rectangular side wall 62 integrally formed over the entire periphery of the top plate 61 to form a recess surrounded by the side wall 62. Lower surface 63 of side wall 62
Is provided with a top portion 64 protruding from the lower surface 63 substantially at the center in the width direction and continuously over the entire circumference. The top 64 corresponds to a vertex of a protrusion 65 formed in a triangular cross section and integrally formed on the lower surface 63 of the side wall 62 along each side of the lower surface 63, and is inclined with respect to the lower surface 63. The lower surface 63 is formed by a straight line that intersects two surfaces extending in the long side direction of each side. The top 64 formed by the straight line exists on the same plane. Therefore, the anodic joint between the top 64 and the upper surface of the frame 20 is formed by line contact.

Next, a method of manufacturing the semiconductor device configured as described above will be described with reference to FIG.

(1) First Step A single-crystal silicon substrate having a thickness of about 10 μm is formed on an upper surface of a lower layer a composed of single-crystal silicon as a substrate material via an intermediate layer b of a silicon oxide film having a thickness of about 1 μm. An SOI (Silicon-On-Insulator) substrate provided with an upper layer c is prepared. Note that the upper layer c is formed of p-type silicon.
The vibrator 30 (excluding the through-hole) on the upper surface of the upper layer c, and the comb-shaped electrodes 31a, 31b, 32a, 32b, 4
0a, 40b, 50a, 50b, pad portions 12, 41
The portions other than the portions corresponding to a, 41b, 51a, 51b and beams 11a to 11d are masked, and the unmasked portions are doped with an impurity such as phosphorus to convert the portions into n-type silicon. Then, foreign matter directly adheres to the upper surface of the upper layer c and the n
In order to prevent conduction between the p-type silicon portion and the p-type silicon portion, an oxide film is formed on the entire upper surface of the upper layer c.

A portion corresponding to the frame 20 (pad portions 12, 41a, 41b, 51a, 51b, and these pad portions 12, 41a, 41b, 51a, 51b and the beam 11).
c, excluding the portions corresponding to the portions electrically connecting the comb-tooth-shaped electrodes 40a, 40b, 50a, 50b) to the portions corresponding to the inside of the frame 20 and the pad portions 12, 41a. , 41b, 51a, 51b, these pad portions 12, 41a, 41b, 51a, 51b and the beam 11
(c) The portions corresponding to the portions electrically connecting the comb-shaped electrodes 40a, 40b, 50a, 50b may be doped with an impurity such as phosphorus to convert the portions into n-type silicon.

(2) Second Step The upper surface of the upper layer c, the vibrator 30 (excluding the through holes), the comb-shaped electrodes 31a, 31b, 32a, 32b, 40a, 4
0b, 50a, 50b, beams 11a to 11d and frame 20
Is masked with a resist film. And
The upper layer c and the oxide film on the upper layer c are etched by RIE (reactive ion etching) or the like to form the comb-like electrodes 40a, 40b, 50a, 50b and the frame body 20 on the intermediate layer b, 30, comb-shaped electrodes 31a, 31
b, 32a, 32b and portions corresponding to the beams 11a to 11d are left.

(3) Third Step Vibrator 30, comb-shaped electrodes 31a, 31b, 32a, 32
b and the intermediate layer b sandwiched between the beams 11a to 11d (upper layer c) and the substrate 10 (lower layer a) are removed by etching with a hydrofluoric acid aqueous solution, and the vibrator 30, the comb-shaped electrode 3
1 a to 31 d and beams 11 a to 11 d are formed so as to float above the substrate 10. This is because when the intermediate layer b is etched with a hydrofluoric acid aqueous solution, not only the portion sandwiched between the upper and lower layers a and c but also the portion sandwiched between the upper and lower layers a and c is close to the outer surface. This is because the part is also removed. Thereafter, the resist film provided as a mask in the fourth step is removed.

(4) Fourth step An oxide film formed on the upper surface of the upper layer c,
After contact holes (not shown) are formed in portions corresponding to 42a, 42b, 52a, and 52b by photolithography etching, an aluminum film is formed by sputtering or the like, and electrode pads 13, 42a, 42b, and 52 are formed.
a and 52b are respectively formed.

(5) Fifth Step The bottom of the glass lid 60 is cut by sandblasting or the like to form a top 64. This step may be performed any time before the sixth step described below.

(6) Sixth Step The top 64 of the glass lid 60 is brought into line contact with the upper surface of the frame 20 in a vacuum, and the glass lid 60 is fixed to the upper surface of the frame 20 by anodic bonding. A closed space S is formed between the glass cover 20 and the glass cover 60. At the time of this anodic bonding, oxygen is generated from the bonded portion, and a part of the generated oxygen flows into the closed space S and a part of the generated oxygen flows out of the glass lid 60.

In the above-described semiconductor device, when the anodic bonding is performed, the anodic bonding portion between the glass cover 60 and the frame 20 is formed by line contact.
Is reduced, and the amount of oxygen generated by anodic bonding between the glass lid 60 and the frame 20 is reduced, so that the amount of oxygen flowing into the closed space S can be reduced,
The degree of vacuum in the closed space S can be kept high. In this case, a semiconductor device can be formed only by preparing a glass lid 60 having a projection 65 formed on the lower surface 63 of the side wall 62 and bonding the glass lid 60 to the frame 20 by anodic bonding. It can be easily constructed and easily manufactured.

Next, in using the semiconductor device configured as described above, each of the electrode pads 13, 42a, 42
b, 52a and 52b are connected to an electric circuit device (not shown). The electric circuit device sets the vibrator 30 to its natural frequency f _0.
In order to oscillate at a constant amplitude in the X-axis direction, drive signals having phases opposite to each other are supplied to the electrode pads 42a and 42b, respectively. Further, in order to detect the vibration of the vibrator 30 in the Y-axis direction, detection signals having opposite phases to each other are applied to the electrode pads 52a,
52b. According to this, the vibrator 30 vibrates in the X-axis direction at a constant amplitude and a natural frequency f ₀ due to an electrostatic attraction generated in the driving section by a driving signal from an electric circuit device.

In this state, when an angular velocity about the Z-axis orthogonal to both the X and Y axes acts on the vibrator 30, the vibrator 30 also vibrates in the Y-axis direction with an amplitude proportional to the angular velocity by Coriolis force. With the vibration of the vibrator 30 in the Y-axis direction, the comb-shaped electrodes 32a and 32b connected to the vibrator 30 also vibrate in the Y-axis direction. Thereby, the comb-shaped electrodes 32a, 50a
And the capacitances of the comb-shaped electrodes 32b and 50b change in opposite directions. A signal indicating this change in capacitance is used as a capacitance signal as the electrode pad 13.
Is input to the electric circuit device via the. The electric circuit device
The angular velocity around the Z axis is derived using the capacitance signal. In this case, since the degree of vacuum in the closed space S covered by the glass lid 60 is kept high, the vibration of the vibrator 30 is favorably vibrated without being suppressed by the resistance of the gas. As a result, the detection accuracy of the angular velocity is improved.

In the above embodiment, the top 64 of the protrusion 65 provided on the lower surface 63 of the side wall 62 of the glass lid 60 is anodically bonded to the upper surface of the frame 20 on the substrate 10. As shown in FIGS. 2 (A) and 2 (B), it is also possible to adopt tops 64a and 64b instead of the top 64 by deformation. In the modified example of FIG.
The lower surface 63a of the side wall 62 of the glass lid 60 is inclined toward the top plate 61 from the outer side to the inner side in the width direction, and the outer end of the lower surface 63a is defined as a top 64a. In this case, the top portion 64a is formed by a square line where the lower surface 63a and the outer surface of the side wall 62 intersect. In the modification of FIG. 2B, the lower surface 63b of the side wall 62 of the glass lid 60 is inclined toward the top plate 61 from the inner side to the outer side in the width direction, and the lower surface 63b
Is defined as the top 64b. In this case, the top 64
b is a rectangular line where the lower surface 63b and the inner surface of the side wall 62 intersect. This also makes the top 6
Since the anodic joint between 4a or 64b and the upper surface of frame 20 is formed by line contact, the same operation and effect as described above can be expected.

In the above embodiment and the modified example, the glass cover 60 is formed in a rectangular shape.
0 may be formed in a circular shape. That is, the glass lid 60 may be configured by a circular top plate and an annular side wall formed integrally with the peripheral portion of the top plate over the entire circumference. Also in this case, as in the case of the above-described embodiment, the top of the protruding portion provided substantially all around the center of the lower surface of the side wall in the width direction is used as a joint, The lower surface is inclined toward the top plate from the outside to the inside in the width direction, and the outer end of the lower surface is a top, that is, a joint portion. It may be inclined to the plate side, and the inner end of the lower surface may be a top, that is, a joint. Also in this case, since the anodic joint between the top portion and the top surface of the frame is formed by line contact, the same operation and effect as described above can be expected.

In the above-described embodiment and various modifications, the upper surface of the frame 20 is used without being processed, but the upper surface of the frame 20 may be processed. One of the modifications will be described with reference to the drawings. FIG. 3A is a schematic plan view of a semiconductor device according to the modification.
(B) is an end view of the same device taken along line B3-B3.

On the upper surface of the frame 20, a circular convex portion 21 having a slope 21a inclined downward from the inside to the outside is formed.
Comb-shaped electrodes 31a, 31b, 32a, 32b, 40a,
40b, 50a, 50b and beams 11a to 11d are formed. Then, a circular top plate 61 ′, and an annular side wall 62 ′ formed integrally with the periphery of the top plate 61 ′ over the entire circumference.
Is formed on the slope 21
a by anodic bonding. At this time, the inner end of the lower surface 63 'of the side wall 62' of the glass lid 60 'is moved to the top 64'.
That is, since the joint portion is used, the top 64 ′ and the frame 20
Is formed by line contact with the sloping surface 21a. In manufacturing this modified example, before the sixth step of the above embodiment, the frame body 20 is polished, scribed, or the like.
What is necessary is just to process so that the convex part 21 may be formed in an upper surface. With this, the same operation and effect as the above embodiment can be expected.

Further, in the above-described modification, the convex portion 21 is formed on the upper surface of the frame 20. However, instead of the convex portion 21, FIG.
As shown in (2), a circular concave portion 22 having a slope 22a inclined upward from the inside to the outside may be formed. The vibrator 30, the comb-shaped electrodes 31a, 31b, 32a, 32b, 40a, 40b, 5
0a, 50b and beams 11a to 11d are formed (only the vibrator 30 is shown). Also in this case, the outer edge of the lower surface 63 'of the side wall 62' of the circular glass lid 60 'is fixed to the top 6
Since it is 4 ″, that is, the junction, the anodic bonding between the top 64 ″ and the slope 22a of the frame 20 is formed by line contact. Also in the manufacture of this modified example, before the sixth step of the above embodiment, the frame 20 is polished, scribed, or the like.
What is necessary is just to process so that the recessed part 22 may be formed in an upper surface. Also according to this, the same operation and effect as the above embodiment can be expected.

In the above-described modification, the frame 2
Although the circular convex portion 21 or concave portion 22 is formed on the upper surface, a square convex portion or concave portion may be formed. In this case, a glass lid 60 formed in a square shape according to the convex or concave portion may be joined to the slope of the convex or concave portion.

In the above-described embodiments and various modifications, the anodic bonding portion is formed by line contact with the bonding portion on the silicon substrate side being a flat surface and the bonding portion on the glass lid side being a top portion where two surfaces intersect. However, the anodic bonding portion may be formed by line contact with the bonding portion on the silicon substrate side being a top portion where two surfaces intersect and the bonding portion on the glass lid side being a plane.
In this case, as shown in FIGS. 5A and 5B, the vibrator 30 and the comb-shaped electrodes 31a and 31
b, 32a, 32b, 40a, 40b, 50a, 50
b, surrounding the beams 11a to 11d, a convex portion 23 having a predetermined width and projecting upward over the entire circumference in a square shape is provided.
Is formed as a top 24 at the outer peripheral end of the upper surface 23a where the horizontal upper surface 23a and the side surface 23b substantially perpendicular to the upper surface 23a intersect. Then, the rectangular glass lid 60 having the above-described bottom surface 63a (see FIG. 2A) is joined to the top portion 24 of the frame 20 by anodic bonding. In manufacturing this modified example, before the sixth step of the above-described embodiment, processing may be performed by polishing, scribing, or the like so as to form the protrusions 23 on the upper surface of the frame body 20. Also in this case, since the anode junction between the top 24 and the bottom surface 63a of the glass lid 60 is formed by line contact, the same operation and effect as in the above embodiment can be expected.

In the above-described modification, the frame 2
Although the square convex portion 23 is formed on the upper surface, a circular convex portion may be formed. In this case, a glass lid formed in a circular shape in accordance with the convex portion may be joined to the outer end of the upper surface of the convex portion.

Further, in the above-described embodiment and various modifications, the two surfaces forming the apex may not be limited to a flat surface but may be a curved surface.

In the above embodiments and modifications, the present invention is applied to a semiconductor device for detecting an angular velocity. However, the present invention is applied to a semiconductor device for detecting a physical quantity which is sealed with a glass cover. For example, the present invention can be applied to a semiconductor device for detecting acceleration. In this case, the amount of displacement of the vibrator with respect to the substrate may be detected based on the acceleration acting on the substrate.

[Brief description of the drawings]

FIG. 1A is a schematic plan view of a semiconductor device according to an embodiment of the present invention, and FIG. 1B is an end view of the semiconductor device of FIG. 1A along line B1-B1.

FIG. 2A is a cross-sectional view of a modification of the glass lid of FIG. 1, and FIG. 2B is a cross-sectional view of another modification of the glass lid of FIG.

FIG. 3A is a schematic plan view of a semiconductor device according to a modified example of the present invention, and FIG.
It is an end elevation along the 3-B3 line.

FIG. 4 is an end view of a modification of the semiconductor device of FIG. 3;

FIG. 5A is a schematic plan view of a semiconductor device according to a modified example of the present invention, and FIG.
It is an end elevation along the 5-B5 line.

[Explanation of symbols]

10: substrate, 11a to 11d: beam, 12, 41a, 41
b, 51a, 51b... pad portion, 13, 42a, 42
b, 52a, 52b... electrode pads, 20.
23: convex portion, 21a, 22a: slope, 22: concave portion, 2
4,64,64a, 64b, 64 ', 64''... top,
30: vibrator, 31a to 31d, 40a, 40b, 50
a, 50b: comb-shaped electrode, 60, 60 ': glass lid, 6
1, 61 '... top plate, 62, 62' ... side wall, 63, 63a,
63b, 63 ': lower surface, 65: projecting portion, S: closed space.

Claims (6)

[Claims] 1. A semiconductor device in which a glass cover is anodically bonded to a silicon substrate to form a substantially vacuum sealed space between the silicon substrate and the glass cover, wherein a bottom surface of the glass cover and an upper surface of the silicon substrate are formed. Wherein the anodic bonding portion is formed by line contact. 2. The semiconductor device according to claim 1, wherein the bonding portion on the silicon substrate side is a flat surface, and the bonding portion on the glass lid side is a top portion where two surfaces intersect. 3. The semiconductor device according to claim 1, wherein the junction on the silicon substrate side is a top portion where two surfaces intersect, and the junction on the glass lid side is a plane. 4. A method of manufacturing a semiconductor device in which a glass lid is anodically bonded to a silicon substrate to form a substantially vacuum sealed space between the silicon substrate and the glass lid, wherein a bottom surface of the glass lid and the silicon substrate are formed. A method of manufacturing a semiconductor device, wherein an upper surface of the semiconductor device is line-contacted and anodically bonded. 5. The method of manufacturing a semiconductor device according to claim 4, wherein a top portion where two surfaces intersect is formed on a part of the bottom surface of the glass lid, and the top portion contacts the top surface of the silicon substrate. A method for manufacturing a semiconductor device, characterized in that the line contact is realized. 6. The method for manufacturing a semiconductor device according to claim 4, wherein a top portion having two surfaces intersecting is formed on a part of the top surface of the silicon substrate, and the top portion contacts a bottom surface of the glass lid. A method for manufacturing a semiconductor device, characterized in that the line contact is realized.