JP2000150891A - Manufacture of semiconductor device and liquid crystal display, and laser-annealing device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To perform polycrystallization, activation, and hydrogenation by the same process device, and to reduce processes by adding a laser device, by applying a first laser beam for forming amorphous silicon as polycrystalline silicon, and by exposing a substrate to hydrogen plasma for hydrogenating the polycrystalline silicon in a chamber. SOLUTION: A laser-annealing device has a first laser device 1 for outputting a laser beam L1 for heating. Due to the operation of the laser beam L1, an amorphous silicon film is subjected to annealing for polycrystallizing. At the side of a glass substrate 7 being placed on a stage 10, a second laser device 13 is arranged. The laser beam L1 is utilized as a laser beam L2 for hydrogenating after the amorphous film being annealed by the laser beam L1 is polycrystallized.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a polycrystalline semiconductor film obtained by irradiating a laser beam to polycrystallize an amorphous semiconductor film or to irradiating a laser beam to activate impurities. A method for manufacturing a semiconductor device and a method for manufacturing a liquid crystal display device using the obtained polycrystalline semiconductor film,
And a laser annealing apparatus used in these methods.

[0002]

2. Description of the Related Art In recent years, as a display device used for a personal computer, a word processor, or the like, a liquid crystal display device (LCD: low power consumption, thin and lightweight) has been developed.
Liquid Crystal Display) is often used. Among them, an active matrix type liquid crystal display device using a thin film transistor (TFT: Thin Film Transistor) using an amorphous silicon (a-Si) film as a switching element as a semiconductor material has a large number of pixels. However, it is used as a display device for a full-color television or an OA, since there is no deterioration in contrast and response and half-tone display is possible.

An amorphous silicon film has a much lower electron mobility than a crystalline silicon film (single-crystal silicon film and polycrystalline silicon film), and therefore drives a TFT in a driving portion or a pixel portion which requires high-speed operation. A-S
The TFT of i cannot be used, and instead, an IC is electrically and mechanically externally connected to the pixel portion for driving.

However, when an external IC is used as described above, there is a problem in that the reliability of the operation is reduced and the cost is increased. Since the pitch becomes narrower, the connection distance between the IC and the pixel portion is shortened and the number of connection points is increased, and the above-described problems of reliability and cost become significant.

Therefore, the amorphous silicon film formed on the substrate is irradiated with laser light to convert the amorphous silicon film into polycrystalline (poly) silicon (poly-Si).
Excimer laser annealing (ELA: Excime) to form a semiconductor film with high electron mobility
r Laser Anneal) technology is being developed. According to this process, since the amorphous silicon film is instantaneously melted and crystallized, polycrystalline particles having a grain size of 0.2 to 1.0 μm or more are obtained by a low-temperature process of about 450 ° C. or less, which causes little heat damage to the substrate. A silicon film can be formed. Therefore, there is an advantage that a polycrystalline silicon film can be formed using a large-area and inexpensive glass substrate.

Here, the magnitude of the electron mobility is μ = | v _d
/ E | (cm ² / S · V), and the average moving speed (drift speed: v) of electrons in the crystal when an electric field E (V / cm) is applied to the crystal. _d (cm / s)) per unit electric field magnitude. In addition, amorphous silicon includes a state in which phase transition to polycrystalline silicon is in progress. This is because the amorphous silicon to be annealed by the laser beam is high purity, but the amorphous silicon ratio is not limited to 100%. This is because a polycrystalline silicon film to be obtained can be obtained if the ratio of amorphous silicon is reduced after annealing by laser light and polycrystallization can be performed.

When such a polycrystalline silicon film is used,
A thin film transistor as a semiconductor device having high electron mobility can be formed over a glass substrate by using a low-temperature process. According to this polycrystalline silicon TFT, the above-mentioned problem is solved, and a thin and high-definition liquid crystal display device called a driver monolithic type in which a driver TFT and a pixel TFT are formed on a glass substrate can be obtained.

Japanese Patent Application Laid-Open No. 7-14849 discloses hydrogenation of a TFT using polycrystalline silicon as described above. The hydrogenation is performed after phosphorus (P) and boron (B) are implanted into the polycrystallized source portion and drain portion, and these impurities are activated by heat. That is, for example, after a silicon nitride film is formed to a thickness of about 300 nm on polycrystalline silicon, the substrate is exposed to hydrogen plasma (consisting of hydrogen ions and hydrogen radicals) at a temperature of 160 ° C. This is to reduce atomic bond defects (dangling bonds: dangling bonds) existing at the grain boundaries of the silicon crystal constituting the source and drain portions. This dangling bond is generally considered to act as a trap level or a barrier for carriers (electrons). By reducing dangling bonds by bonding hydrogen atoms, a TFT using polycrystalline silicon is formed.
Operation can be stabilized. FIG. 8 is a schematic diagram of hydrogenation of the above-described polycrystalline silicon.

However, in the conventional technology relating to hydrogenation, since individual processes such as polycrystallization, activation and hydrogenation are performed in separate devices, the contact area of the device in a clean room having a limited area increases. There was an adverse effect. Since the surface cleaning by the adhesion of the oxide film after the completion of one step is required, the number of process steps is increased.

[0010]

As described above, in the case of a process for an amorphous semiconductor film, the area is limited because polycrystallization, activation, and hydrogenation have conventionally been performed in separate process apparatuses. In addition, in a clean room, there is a problem that the ground area of the device increases and also a problem that it is necessary to clean the surface by attaching an oxide film after one step.

The present invention has been made on the basis of the above circumstances, and an object thereof is to perform polycrystallization, activation, and hydrogenation in the same process apparatus by adding one laser apparatus. Accordingly, a method for manufacturing a semiconductor device, a method for manufacturing a liquid crystal display device, and a method for manufacturing the same using a polycrystalline semiconductor film obtained by reducing the ground area and the number of process steps of a process device are achieved. It is an object of the present invention to provide a laser annealing apparatus used for realization.

[0012]

According to a first aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising the steps of: loading a substrate into a chamber; and forming an amorphous silicon film formed on the substrate into a film. Scanning the substrate by a predetermined distance relative to the substrate while irradiating the first laser light; converting the amorphous silicon into polycrystalline silicon by irradiating the first laser light; Hydrogenating the polycrystalline silicon by exposing the substrate to hydrogen plasma, forming a gate insulating film on the polycrystalline silicon, and forming a gate electrode on the gate insulating film Forming a source region and a drain region in the hydrogenated polycrystalline silicon; forming an interlayer insulating film in a region including on the gate electrode; Forming a source region and a contact hole in the interlayer insulating film on the drain region, forming a source electrode to be connected to the source region through a contact hole formed on the source region,
Forming a drain electrode formed to be connected to the drain region via a contact hole formed on the drain region.

According to a second aspect of the present invention, in the method of manufacturing a semiconductor device, a step of carrying a substrate into a chamber and a step of forming a film-shaped impurity-doped polycrystalline silicon on the substrate are performed by a first method. Scanning the substrate relative to the substrate by a predetermined distance while irradiating the laser beam, activating the polycrystalline silicon by irradiating the first laser beam, and hydrogenating the substrate in the chamber. Hydrogenating the polycrystalline silicon by exposure to plasma; forming a gate insulating film on the polycrystalline silicon; forming a gate electrode on the gate insulating film; Forming a source region and a drain region in the polycrystalline silicon, forming an interlayer insulating film in a region including on the gate electrode, and forming the source region Forming a contact hole in the interlayer insulating film on the drain region, and forming a source electrode so as to be connected to the source region through a contact hole formed on the source region. Forming a drain electrode formed so as to be connected to the drain region through a contact hole formed in the semiconductor device.

According to a third aspect of the present invention, in the method of manufacturing a semiconductor device according to the first or second aspect, the step of hydrogenating the polycrystalline silicon includes applying the first laser light onto the substrate. The irradiation is performed by irradiating the second laser light to a part different from the irradiation part almost simultaneously with the irradiation of the first laser light.

According to a fourth aspect of the present invention, in the method for manufacturing a liquid crystal display device, the step of carrying the first substrate into the chamber and the step of removing the amorphous silicon formed on the first substrate in a film form. Scanning the first substrate relative to the first substrate by a predetermined distance while irradiating the first laser beam to convert the amorphous silicon to polycrystalline silicon; Hydrogenating the polycrystalline silicon by exposing it to hydrogen plasma; forming a scan line and a gate electrode on the first substrate;
Forming a signal line, a drain electrode, and a source electrode on the substrate, forming a pixel electrode to be connected to the drain electrode or the source electrode, and forming a common electrode on the second substrate And a step of sealing by interposing liquid crystal between the first substrate and the second substrate.

According to a fifth aspect of the present invention, there is provided a method of manufacturing a liquid crystal display device, comprising the steps of: loading a first substrate into a chamber; and forming a film on the first substrate in a film form and doped with impurities. Scanning the crystalline silicon by a predetermined distance relative to the first substrate while irradiating the first laser light to the crystalline silicon; and activating the polycrystalline silicon by the irradiation of the first laser light. Hydrogenating the polycrystalline silicon by exposing the first substrate to hydrogen plasma in the chamber; forming a scan line and a gate electrode on the first substrate; Forming a signal line, a drain electrode, and a source electrode on a substrate; forming a pixel electrode so as to be connected to the drain electrode or the source electrode; and forming a common electrode on the second substrate Step and the said first substrate second
And interposing a liquid crystal between the substrate and the substrate for sealing.

According to a sixth aspect of the present invention, in the method for manufacturing a liquid crystal display device according to the fourth or fifth aspect, the step of hydrogenating the polycrystalline silicon includes the step of forming the first laser beam on the substrate. The irradiation is performed by irradiating the second laser light to a part different from the irradiation part at substantially the same time as the irradiation of the first laser light.

According to a seventh aspect of the present invention, in a laser annealing apparatus, an amorphous semiconductor film formed on an object to be processed is irradiated with a first laser beam to polycrystalline the amorphous semiconductor film. A first laser light source serving as a semiconductor film, and a second laser light irradiating a portion different from a portion irradiated with the first laser light on the object to be processed to hydrogenate the polycrystalline semiconductor film. A second laser light source, a chamber into which the respective lights emitted from the first laser light source and the second laser light source are introduced, and the object to be processed is installed therein, Scanning means for relatively scanning the first laser light and the second laser light.

According to the present invention, in a laser annealing apparatus, a polycrystalline semiconductor film formed on an object to be processed and doped with an impurity is irradiated with a first laser beam, and the polycrystalline semiconductor film is irradiated with the first laser beam. A first laser light source to be activated;
A second laser light source configured to irradiate a second laser beam to a portion different from a portion irradiated with the first laser beam onto the workpiece and hydrogenate the polycrystalline semiconductor film; and the first laser. A chamber into which each light emitted from the light source and the second laser light source is introduced and the object to be processed is installed, and the first laser light and the second laser beam to the object to be processed. Scanning means for relatively scanning the laser light.

According to these inventions, the annealing process and the hydrogenation process can be performed by the same device, so that the occupied area of the process device can be reduced.
In addition, it is possible to know whether or not the crystallinity is appropriate during another process, and it is possible to obtain an index for an optimal annealing process in-process, and to obtain a high-quality multi-crystal with uniform crystallization. A crystalline semiconductor film can be obtained. Therefore, as a result, a semiconductor device or a liquid crystal display device having favorable operation characteristics can be obtained.

[0021]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, an example of a first embodiment according to the present invention will be described with reference to simplified drawings. FIG.
1 shows a perspective view of the laser annealing apparatus according to the present embodiment.

[0022] The laser annealing device has a first laser device 1 outputs laser light L ₁ for heating (annealing). As the first laser device 1, an excimer laser is used.
XeCl, which oscillates light of 08 nm, is used.
Other laser media such as rF and KrF may be used. Note that laser light for activating implanted impurities may be used instead of polycrystallization, but the following embodiment will be described using polycrystallization as an example.

The laser light L ₁ emitted from the first laser device 1 enters a shaping optical system (homogenizer) 2. This shaping optical system makes the intensity distribution of the laser beam L ₁ (having a cross section of about 20 mm × 30 mm) emitted from the first laser device 1 uniform and makes the shape of the beam cross section 150 mm × 0.4 mm. (A so-called line beam). And the reflection mirror 3
After that, the light enters the attenuator (not shown). By passing through the attenuator, the laser beam L ₁ is the energy density is finely adjusted.

Then, the laser beam L ₁ emitted from the attenuator enters the imaging lens 4 and is introduced into the process chamber 6 through the process window 5, where the glass substrate 7 (the size: 300 mm) is a substrate to be processed. × 40
(0 mm / thickness: 1.0 mm). On the upper surface of this glass substrate, as shown in FIG. 2, SiO _x , SiN _x , and further, TEOS (Tetra Ethyl
An undercoat 8 made of Ortho Silicate: Si [OC ₂ H ₅ ] ₄ ) and an amorphous silicon (a-Si) film 9 which is an amorphous semiconductor film are sequentially laminated and formed. I have. The irradiation of the laser beam L ₁ described above is carried out from the amorphous silicon film 9 side. In this embodiment, the undercoat 8 has S
iO _x is used, and the film thickness is 0.35 μm to 0.4
It is 0 μm. Then, the amorphous silicon film 9
Has a thickness of 50 nm to 100 nm.

[0025] by the action of the laser beam L _1, the amorphous silicon film 9 is annealed as described later,
Polycrystallization is performed. Here, as the film forming means, CVD (Chemical Vapor Deposition) is usually used. The glass substrate 7 is placed on the stage 10.
The stage 10 is driven in the XY directions while being irradiated with the laser beam L ₁ on the glass substrate 7 by the driving means 11, and the control thereof is performed by the control means 12.

On the side of the glass substrate 7 placed on the stage 10, a second laser device 13 is arranged. The second laser device 13 has also been configured with an excimer laser in the same manner as the first laser device 1, the laser beam after the amorphous silicon film 9 to be annealed by the laser beam L ₁ is polycrystalline, It is used as the laser beam L ₂ for the hydrogenation. In addition to the excimer laser, an alexandrite laser, a YAG laser, a CO ₂ laser, or the like can be used in consideration of the relationship between the concentration of the hydrogen gas introduced into the process chamber 6 and the peak output of the laser beam L _2. .

In this embodiment, the second laser device 1
The energy density of the laser beam L ₂ output by the laser beam 3 is 10 ⁹ W
/ Cm ² or more. The laser light L ₂ output from the second laser device 13 is converged by the condenser lens 14 and introduced into the process chamber 6 through the process window 15 in parallel with the glass substrate 7. Then, the downstream side with respect to the traveling direction of the site which has been irradiated by the laser beam L ₁ (arrow A in FIG. 1), and is condensed. The laser beam L ₂ exits from the process window 16 to the outside of the process chamber 6 and is applied to the light shielding plate 17. By doing so, the process chamber 6 is driven by the laser light L ₂
To prevent damage from irradiation.

With respect to a method of actually performing hydrogenation in the same process chamber following polycrystallization or activation in such a configuration, an example using laser light will be described. Here, the generation of hydrogen plasma by a laser beam is described, but it goes without saying that the present invention forms the gist of the present invention as long as hydrogen plasma can be obtained by other means.

The glass substrate 7 annealed by the laser light L ₁ is transported by the stage 10 in the direction of the arrow A as it is. At this time, while evacuating the process chamber 6 from the pipe 19 through the valve 18, hydrogen gas is supplied from the pipe 21 through the valve 20, and the internal pressure is set to several Torr.

The amorphous silicon film 9 on the glass substrate 7 that has been annealed by the laser light L ₁ emitted from the first laser device 1 is in a polycrystalline state. )
Transported downstream of Then, it comes under the condensing position of the laser beam L ₂ at a predetermined distance. At this time, the hydrogen gas in the vicinity of the light condensing position is turned into plasma (hydrogen plasma in FIG. 1), and the lower part of the hydrogen plasma is
Is passed through and is exposed to hydrogen plasma, so that polycrystallized silicon (polysilicon) is hydrogenated by hydrogen atoms in a state of radicals or ions. As a result, dangling voids (surplus bonds) are terminated with hydrogen, thereby reducing atomic bond defects caused by intramolecular unsaturated bonds and increasing electron mobility in polycrystalline silicon. As a result, the characteristics of the transistor made of this polysilicon are improved.

It should be noted, with respect to the condensing position of the laser beam L ₂ is condensing position of the laser beam L _1, apart few mm in the traveling direction of the downstream of the glass substrate 7, the hydrogen plasma formed by the laser beam L ₂ The polycrystallization of the amorphous silicon film 9 is prevented from being affected by the hydrogen plasma so as not to reach the portion of the glass substrate 7 where polycrystallization is performed. Therefore, in this embodiment, a delay control system is provided in the control means 12 to control the first laser device 1 and the second laser device 13 not to oscillate at the same time.

[0032] In this delay control system takes into account also the distance (number mm) between the condensing position and the condensing position of the laser light L ₂ of the laser beam L _1. As shown in FIG. 3, with respect to the n laser pulses, the laser beam L ₂ is applied to the laser beam L ₁ for a slight delay time corresponding to the time during which the glass substrate 7 is transported in this several mm section. Oscillates with only a shift First laser device 1 and second laser device 13
Although they oscillate almost simultaneously, by giving such a slight delay time, the amorphous silicon film 9 that has been polycrystallized can be appropriately hydrogenated while reducing the influence on each laser beam. It is made to be.

Further, the first laser device 1 and the second laser device 13 are arranged so that the irradiation pitch of the respective laser beams becomes constant based on the encoder signal oscillated with the movement of the stage 10. Is oscillated. Furthermore, once against sites finished polycrystalline and hydrogenation over a glass substrate 7, the stage 10 by the control means 12 in order to prevent the same processing is performed again of the laser beam L ₁ and the laser beam L ₂ while avoiding sites on the glass substrate 7 which has received the irradiation, so that the laser beam L ₂ is emitted after the laser beam L ₁ when viewed on the same site, X by the driving means 11
It is designed to be driven in the Y direction.

In the first embodiment described above, the laser beam L ₁ is used for polycrystallization, but impurities (P, B, etc.) are implanted (doped) as described above. Later, thermal activation for stabilizing the operation of the transistor may be performed. In this case, the glass substrate 7
The upper polycrystalline silicon need not be formed by laser annealing, but may be formed by other means such as thermal annealing. Also, 1 of energy polycrystalline with the laser beam L ₂ in the case of activation
/1.5 or so.

The amorphous silicon film 9 provided on the glass substrate 7 this way is, by being annealed by the laser beam L _1, the polysilicon film as a polycrystalline semiconductor thin film is formed on the glass substrate 7, Then, a TFT as a semiconductor device is formed. Next, the glass substrate 7 is incorporated as a part of the liquid crystal display device.

Now, a driver monolithic liquid crystal display device embodied by these laser annealing apparatuses and made of polycrystalline silicon manufactured using the above-described semiconductor film manufacturing method is described in the present invention. This will be described as a second embodiment.

FIG. 4 shows the overall schematic structure of the liquid crystal display device of the present embodiment. A driving unit TFT composed of a gate driver and a source driver controls a gate line and a scanning line. Becomes The video signal and the synchronization signal from the signal control unit and the power from the power supply are input to each driver. The gate driver is one frame (60H
Once in z), this is a digital circuit having a function of selecting each gate line, and operates in a cycle of a scanning time (15 to 40 μs). The source driver is a transparent I / O on the array substrate.
A voltage is applied to the gate line of the liquid crystal filled between the pixel electrode made of a TO (Indium Tin Oxide) film and the opposing pixel electrode on the opposing substrate, and the voltage is applied to the gate line according to the video information via the pixel TFT. This is a circuit for applying a voltage. At this time, the display deteriorates if the DC power is continuously applied to the liquid crystal. Therefore, the AC power is applied to the opposite transparent electrode, and a voltage having an opposite polarity is alternately applied. This is called inversion driving, whereby the source driver operates at a high frequency of 20 to 100 Hz.

FIG. 5 shows a liquid crystal display device 8 according to the present embodiment.
1 shows a cross-sectional configuration. In addition, a spacer, a color filter, a light shielding film, a polarizing plate, and the like are not shown. On the glass substrate 7 of the liquid crystal display device 81, coplanar thin film transistors as the above-described semiconductor devices are formed through a normal photolithography process or the like. That is, P
A type TFT 82, an N-type TFT 83, and a pixel TFT 84 are formed. The P-type TFT 82 and the N-type TFT 83 form a driver TFT 85 and are complementary transistors. The pixel unit TFT 84 forms a pixel matrix unit (display unit) 86.

In each of the TFTs 82 to 84, a silicon film (hereinafter, referred to as a polysilicon film) 87 in which an amorphous silicon film is crystallized by the above-described annealing method is formed in a predetermined shape on a glass substrate 7 undercoat 8.
Laminated on top. The polysilicon film 87 includes a channel region 87a serving as a passage through which electrons flow, and impurities (donor / acceptor) such as P (phosphorus) and B (boron).
Doped source region 87b and drain region 87
c.

The polysilicon film 87 is a gate insulating film 88
Covered by A gate electrode 89 is formed on the gate insulating film 88, and the gate electrode 89 is covered with an interlayer insulating film 91. A contact hole is provided in the interlayer insulating film 91, and a source electrode 92a connected to the source region 87b and a drain electrode 92b connected to the drain region 87c are formed through the contact hole. Further, the pixel portion TFT 84 has a source electrode 92 a
Is connected to a source electrode line (signal line) 93a, and a drain electrode 92b is connected to a pixel electrode 93b made of an ITO film. Note that the source region 87
It goes without saying that the operation of the liquid crystal display device 81 can be performed even if the “b” and the drain region 87 c are exchanged.

Here, each TFT is formed in the following steps. First, as shown in FIG. 6A, an active layer 110 was formed by patterning a hydrogenated polysilicon film according to the first embodiment of the present invention by a photoetching process. Subsequently, FIG.
After forming a SiO _x film (gate insulating film) 111 on the entire surface including the active layer 110 by the CVD method as shown in FIG.
The gate electrode 112 was formed by depositing an oW film and performing patterning. Further, using the gate electrode 112 as a mask, the active layer 110 other than the channel region 113 is used.
Was ion-implanted.

Thereafter, activation (a method using a laser beam or another method) is performed to perform the source region 1.
14 and the drain region 115 are formed (in the present embodiment, n-type, and after that, in the same process chamber as the activation process, the hydrogenation process using laser light according to the first embodiment of the present invention is performed. May be done). Next, SiO _x was formed on the entire surface of the glass substrate 7 by CVD.
An interlayer insulating film 116 made of
Contact holes 117 and 118 are opened in a portion of the interlayer insulating film 116 corresponding to the drain region 115 and the source electrode 119 and the drain electrode 120 connected through the source region 114 and the drain region 115 through deposition and patterning of an Al film. By forming, FIG.
Each of the TFTs shown in (1) and (2) was constructed.

Now, the structure of the liquid crystal display device 81 on which the semiconductor device having the above structure is formed will be described again with reference to FIG. Above the glass substrate 7 (array substrate: first substrate), a counter glass substrate 102 (second substrate) provided with a counter pixel electrode (common electrode) 101 made of an ITO film on the lower surface (the glass substrate 7 side) ) Are arranged at predetermined intervals via a spacer (not shown). The periphery of the space forming the pixel matrix 86 between the glass substrate 7 and the counter glass substrate 102 is sealed with a sealant.

The liquid crystal 103 is filled in the sealed space thus formed. Note that the filling of the liquid crystal 103 may be performed by dropping the liquid crystal 103 onto the glass substrate 7 or the opposite glass substrate 102 before sealing with the sealant, and then bonding the glass substrate 7 and the opposite glass substrate 102 together. After the sealing with the sealing agent, the liquid crystal 103 may be injected into the sealing space from the inlet of the sealing agent or may be suctioned by vacuum. Further, an alignment film 104 made of polyimide is formed on the glass substrate 7 and the opposing glass substrate 102 corresponding to the pixel matrix section 86 so as to sandwich the liquid crystal 103. 7, a gate electrode line (scanning line) 105 is connected to the gate electrode 89.

Although a coplanar TFT having a single gate electrode has been described as an example of a semiconductor device manufactured using polycrystalline silicon obtained in the embodiment of the present invention, it goes without saying that a dual gate coplanar TF is used.
T may be used, staggered TFT and inverted staggered TFT
But it is good. Of course, if amorphous silicon is used after being poly-crystallized, it may be used for other types of semiconductor devices typified by ordinary CMOS, bipolar transistors, static induction transistors, SRAMs, DRAMs and the like. This is because the purpose of the present invention is to perform activation and hydrogenation after polycrystallization or ion implantation of an amorphous semiconductor film by one apparatus.

[0046]

According to the present invention, by adding one laser device, polycrystallization, activation, and hydrogenation are performed in the same process device, thereby reducing the ground area of the process device and reducing the process. The number of steps can be reduced. In other words, it is possible to prevent the oxide film from adhering to the substrate to be processed after one step, and thus the number of steps for cleaning the oxide film can be reduced. That is, according to the present invention, it is possible to manufacture a semiconductor device and a liquid crystal display device using a polycrystalline semiconductor film in which contamination generated between steps is small and the number of process steps is reduced.

[Brief description of the drawings]

FIG. 1 is an overall configuration diagram showing a laser annealing apparatus according to a first embodiment of the present invention.

FIG. 2 is an enlarged sectional view showing a glass substrate on which a film is formed and annealed, which is used in the first embodiment of the present invention.

FIG. 3 is a schematic diagram showing emission timings of laser light from a first laser device and laser light from a second laser device used in the first embodiment of the present invention.

FIG. 4 is a schematic configuration diagram showing a driver monolithic LCD unit according to a second embodiment of the present invention.

FIG. 5 is a schematic sectional view showing the structure of a driver monolithic liquid crystal display device according to a second embodiment of the present invention.

FIG. 6 is a sectional view showing a manufacturing process of the TFT according to the second embodiment of the present invention.

FIG. 7 is an enlarged top view of a pixel portion of a driver monolithic liquid crystal display device according to a second embodiment of the present invention.

FIG. 8 is a schematic diagram relating to hydrogenation of polycrystalline silicon.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... First laser device, 2 ... Shaping optical system, 3 ... Reflection mirror, 4 ... Imaging lens 5.15.16 ... Process window, 6 ... Process chamber 7 ... Glass substrate, 8 ... Undercoat, 9 ... Amorphous Silicon film 10 ... stage, 11 ... driving means, 12 ... control means, 1
DESCRIPTION OF SYMBOLS 3 ... 2nd laser device 14 ... Condensing lens, 17 ... Light shielding plate, 18/20 ... Valve, 19/21 ... Pipe 81 ... Liquid crystal display device, 82 ... P-type TFT, 83 ... N-type T
FT 84: pixel portion TFT, 85: drive portion TFT, 86: pixel matrix portion 87: polysilicon film, 87a / 113 ... channel region 87b / 114 ... source region, 87c / 115 ... drain region 88/111 ... gate insulating film , 89/112 gate electrode 91/116 interlayer insulating film, 92a / 119 source electrode 92b / 120 drain electrode, 93a source electrode line, 93b pixel electrode 101 opposing pixel electrode, 102 opposing glass substrate 10
3 liquid crystal 104 alignment film 105 gate electrode line 110 active layer 117/118 contact hole

 ──────────────────────────────────────────────────続 き Continued on the front page F-term (reference) 2H092 JA25 JA26 JA34 JA37 JA41 KA04 KA05 MA08 MA30 5F052 AA02 BB01 BB06 BB07 DA02 DB01 JA03 JA10 5F110 AA01 AA19 BB02 BB04 CC02 DD02 DD12 DD13 DD14 EE06 GG02 GG13J25 NN23 PP03 QQ09 QQ25

Claims (8)

[Claims] 1. A step of loading a substrate into a chamber, and irradiating amorphous silicon formed in a film on the substrate with a first laser beam by a predetermined distance relative to the substrate. Scanning, converting the amorphous silicon to polycrystalline silicon by irradiating the first laser light, and hydrogenating the polycrystalline silicon by exposing the substrate to hydrogen plasma in the chamber. When,
Forming a gate insulating film on the polycrystalline silicon, forming a gate electrode on the gate insulating film, and forming a source region and a drain region on the hydrogenated polycrystalline silicon Forming an interlayer insulating film in a region including on the gate electrode; forming a contact hole in the interlayer insulating film on the source region and the drain region; and forming a contact hole on the source region. Forming a source electrode so as to connect to the source region through a hole, and forming a drain electrode formed so as to connect to the drain region through a contact hole formed on the drain region. A method for manufacturing a semiconductor device, comprising: 2. A step of loading a substrate into a chamber, and irradiating a first laser beam to polycrystalline silicon formed into a film on the substrate and doped with impurities, relative to the substrate. Scanning a predetermined distance;
Activating the polycrystalline silicon by irradiating the polycrystalline silicon with the laser light, hydrogenating the polycrystalline silicon by exposing the substrate to hydrogen plasma in the chamber, and performing gate insulation on the polycrystalline silicon. Forming a film, forming a gate electrode on the gate insulating film, forming a source region and a drain region in the hydrogenated polycrystalline silicon, and a region including on the gate electrode Forming a contact hole in the interlayer insulating film on the source region and the drain region, and connecting to the source region through a contact hole formed on the source region. A source electrode to be connected to the drain region via a contact hole formed on the drain region. The method of manufacturing a semiconductor device characterized by a step of forming the formed drain electrode as. 3. The step of hydrogenating the polycrystalline silicon includes: irradiating the first laser beam with a second laser beam on a portion of the substrate different from the portion on which the first laser beam is irradiated. 3. The method for manufacturing a semiconductor device according to claim 1, wherein the irradiation is performed substantially simultaneously. 4. A step of carrying a first substrate into a chamber, and irradiating the first substrate with a first laser beam onto amorphous silicon formed in a film on the first substrate. Scanning the amorphous silicon into polycrystalline silicon relative to the substrate by a predetermined distance, and hydrogenating the polycrystalline silicon by exposing the first substrate to hydrogen plasma in the chamber. Forming a scanning line and a gate electrode on the first substrate; forming a signal line, a drain electrode, and a source electrode on the first substrate; Forming a pixel electrode so as to be connected; forming a common electrode on a second substrate; and forming the first substrate and the second substrate on the second substrate.
And sealing the liquid crystal with a substrate interposed therebetween. 5. A step of loading a first substrate into a chamber, and irradiating a first laser beam to polycrystalline silicon formed in a film shape on the first substrate and doped with impurities. Scanning the substrate by a predetermined distance relative to the substrate, activating the polycrystalline silicon by irradiating the first laser beam, and exposing the first substrate to hydrogen plasma in the chamber. Hydrogenating the polycrystalline silicon, forming scan lines and gate electrodes on the first substrate, and forming signal lines, drain electrodes, and source electrodes on the first substrate Forming a pixel electrode so as to be connected to the drain electrode or the source electrode, forming a common electrode on a second substrate, and forming the pixel electrode between the first substrate and the second substrate. Liquid crystal interposed between And sealing the liquid crystal display device. 6. The step of hydrogenating the polycrystalline silicon includes: applying a second laser beam to a portion different from a portion of the first substrate irradiated with the first laser beam; 6. The method for manufacturing a semiconductor device according to claim 4, wherein the irradiation is performed substantially simultaneously with the irradiation. 7. A first laser light source for irradiating an amorphous semiconductor film formed on an object to be processed with a first laser beam to make the amorphous semiconductor film a polycrystalline semiconductor film, A second laser light source that irradiates a second laser light to a portion different from the first laser light irradiation portion on the workpiece to hydrogenate the polycrystalline semiconductor film; and the first laser light source A chamber into which each light emitted from the second laser light source is introduced and the object to be processed is installed, and the first laser light and the second laser beam to the object to be processed. A laser annealing device comprising: a scanning unit for relatively scanning a laser beam. 8. A first laser light source for irradiating a polycrystalline semiconductor film formed on an object to be processed and doped with impurities with a first laser beam to activate the polycrystalline semiconductor film; A second laser light source that irradiates a second laser light to a portion different from a portion irradiated with the first laser light onto the processing object to hydrogenate the polycrystalline semiconductor film; and the first laser light source; A chamber into which the respective lights emitted from the second laser light source are introduced and in which the object to be processed is installed; and a first laser beam and a second laser for the object to be processed. A laser annealing apparatus comprising: a scanning unit that relatively scans light.