JP2000143213A - Supply method of semiconductor treating gas - Google Patents

Abstract

PROBLEM TO BE SOLVED: To suppress the corrosion of a gas feed system, equipment and pipes and to facilitate handling as a treating gas by separately supplying a material having hydrogen and oxygen atoms and a fluorine based gas and generating hydrogen fluoride and moisture in a treating part in semiconductor production facilities. SOLUTION: A semiconductor treating gas is supplied to the treating part of the semiconductor production facilities to perform the cleaning of a chamber or a pipe line or the etching of a wafer with hydrogen fluoride in the coexistence of moisture. At the time of supplying the treating gas, the material having hydrogen and oxygen atoms and the fluorine based gas, which constitute the treating gas, are separately supplied to produce hydrogen fluoride and moisture in the treating part. As the fluorine based gas as a fluorine source, fluorine, chlorofluoride, bromofluoride, iodofluoride or the like is preferably used and as the material having hydrogen and oxygen atoms, hydrogen peroxide, water, alcohols or the like is preferable. As a result, hydrogen fluoride high in corrosivity is enabled to act only in the treating part.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for supplying a processing gas used for cleaning chambers and pipes and etching a wafer in the field of manufacturing semiconductors.

[0002]

2. Description of the Related Art In the field of manufacturing semiconductors, hydrogen fluoride (HF) is used in a cleaning process for removing contaminants and the like adhering to a wall surface of a chamber or an exhaust pipe, a process for removing a surface oxide film on a wafer, and the like. .

[0003] As is well known, hydrogen fluoride (HF) is a very corrosive gas, but hydrogen fluoride (HF) in the absence of coexisting water hardly causes a corrosive action.

[0004]

Conventionally, hydrogen fluoride
(HF) is supplied from the storage container to the chamber and the exhaust pipe for the work.
Since (HF) is extremely corrosive, there has been a problem that troubles due to corrosion frequently occur in the hydrogen fluoride supply system.

The present invention has been made in view of such a point. By generating hydrogen fluoride and moisture at a treatment location, corrosion of equipment and pipes in a gas supply system and semiconductor manufacturing equipment is made. It is an object of the present invention to provide a method for supplying a semiconductor processing gas capable of suppressing the generation of a semiconductor processing gas.

[0006]

In order to achieve the above-mentioned object, the present invention provides a fluorine-based gas such as fluorine, chlorine fluoride, bromine fluoride or iodine fluoride, and hydrogen peroxide, water or alcohols. And a substance having hydrogen and oxygen atoms is separately supplied to a processing section of a semiconductor manufacturing facility, and the processing section generates hydrogen fluoride and moisture.

[0007]

According to the present invention, a fluorine-containing gas such as fluorine, chlorine fluoride, bromine fluoride or iodine fluoride and a substance containing hydrogen and oxygen atoms such as hydrogen peroxide, water or alcohols are used. Are supplied individually to the processing section of the semiconductor manufacturing facility, and hydrogen fluoride and moisture are generated in the processing section, so that highly corrosive hydrogen fluoride acts only in the processing section. In addition, unnecessary corrosion of the gas supply system is eliminated, and handling as a processing gas becomes easy.

[0008]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Fluorine, chlorine fluoride, bromine fluoride, iodine fluoride, or the like is connected to a reaction gas supply / discharge passage connected to a reactor such as a CVD chamber or a PVD chamber mounted on a semiconductor manufacturing line. And a substance having hydrogen and oxygen atoms, such as hydrogen peroxide, water or alcohols.

Fluorine-based gas is decomposed in a reactor or a reaction gas supply / exhaust passage, and hydrogen fluoride is generated by the decomposed fluorine component and hydrogen in a substance having hydrogen and oxygen atoms, and water is generated. Will be generated.

In the presence of moisture, the generated hydrogen fluoride removes an oxide film adhered to the surface of a wafer (work) placed in the reactor or supplies / reacts the reactive gas to / from the surface of the reactor. For example, the reaction product attached to the road surface is removed.

The fluorine-based gas includes, in addition to fluorine, chlorine monofluoride, chlorine trifluoride, bromine monofluoride, bromine trifluoride, bromine pentafluoride, iodine pentafluoride, iodine heptafluoride And the like. When chlorine trifluoride is used, it is decomposed in a so-called normal temperature range. Therefore, by changing the type of gas to be used depending on the decomposition temperature of the gas and the temperature range of the supply destination, hydrogen fluoride can be generated and used at a target location without any special operation.

[0012]

According to the present invention, a substance containing a fluorine gas such as fluorine, chlorine fluoride, bromine fluoride or iodine fluoride and a hydrogen and oxygen atom such as hydrogen peroxide, water or alcohols is used. Are supplied individually to the processing section of the semiconductor manufacturing facility, and hydrogen fluoride and moisture are generated in the processing section, so that highly corrosive hydrogen fluoride acts only in the processing section. In addition, unnecessary corrosion of the gas supply system is eliminated, and handling as a processing gas becomes easy.

Continuation of the front page (72) Inventor Toshiki Manabe 3-21-8 Nishi-Shimbashi, Minato-ku, Tokyo Iwatani Industrial Co., Ltd. Tokyo head office F-term (reference)

Claims (2)

[Claims] 1. A processing gas to be supplied to a semiconductor manufacturing facility, comprising a substance having hydrogen and oxygen atoms and a fluorine-based gas, wherein hydrogen and oxygen atoms are contained in a processing section of the semiconductor manufacturing facility. A method for supplying a semiconductor processing gas, in which a material and a fluorine-based gas are separately supplied, and hydrogen fluoride and moisture are generated in a processing section. 2. The fluorine-based gas is one kind selected from fluorine, chlorine fluoride, bromine fluoride, and iodine fluoride, and the substance having hydrogen and oxygen atoms is hydrogen peroxide, water, 2. The method for supplying a semiconductor processing gas according to claim 1, wherein the method is a kind selected from alcohols.