JP2000134541A - Method for driving solid-state image pickup element and image pickup device using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To shorten a period from the input of a trigger signal to the output of a CCD output signal by executing the electric charge transfer operation of a vertical transfer part in a prescribed period except the first prescribed one or in the period where the prescribed period except the first one is added to the prescribed time from the start of the first one. SOLUTION: A vertical transfer operation is continuously and repeatedly executed in the vertical transfer part of CCD 10' in the period before the input of the trigger signal at first concerning the operations of CCD and its driving circuit in the case of an external trigger input operation. In the period, the vertical transfer pulse signals XV1', XV2' and XV3' of the vertical transfer part in CCD 10', which are especially for a speed to execute a high speed transfer operation, are created by a vertical transfer pulse creating circuit 42 and they are made to be the vertical transfer pulse signals XV1, XV2 and XV3 and inputted to a vertical driving circuit 45 with change-over equipment 43. The pulse speed is selectively controlled by a frequency control signal from a timing control circuit 141.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention starts the accumulation of electric charges obtained by photoelectrically converting light exposed on a solid-state imaging device in synchronization with a trigger signal from the outside, and accumulates the accumulated electric charges. When the electric charge is output from the solid-state imaging device, the period from the input of the trigger signal to the output of the electric charge can be made as short as possible, and the occurrence of smear can be reduced. The present invention relates to an improvement in a driving method of a solid-state imaging device, and further relates to an imaging apparatus using the driving method.

[0002]

2. Description of the Related Art In an image pickup apparatus using a solid-state image pickup element, an image pickup is sometimes performed in synchronization with an external trigger signal. Therefore, the accumulation of the electric charge obtained by photoelectrically converting the light exposed to the photodiode of the solid-state imaging device is started in synchronization with the trigger signal.

FIG. 5 is a diagram schematically showing an example of a block configuration of a conventionally used solid-state imaging device and its driving circuit, and a signal flow between the blocks. Note that the block configuration shown in this figure shows an example of a block configuration used in an imaging device using a general solid-state imaging device. In this figure, the XSG pulse signal is drawn as it is to the CCD 10 as it is.
Due to the circuit configuration inside the CD, there is an imaging device having a circuit configuration in which an XSG pulse signal is superimposed on another signal line, for example, a vertical transfer pulse signal and input to a CCD.

In FIG. 1, reference numeral 10 denotes a solid-state image pickup device (hereinafter referred to as CCD: Charge Coupled Device).
a photodiode 1 that can accumulate charges obtained by photoelectrically converting incident light.
And the charge is transferred from the photodiode 1, and the transferred charge is further transferred in the vertical direction, that is, in the figure, downward. In this figure, the charge is transferred from the vertical transfer unit 2, and the transferred charge is transferred. A horizontal transfer unit 3 capable of transferring charges further in the horizontal direction, that is, to the right in this figure, and an amplifier 4 for amplifying the charges sent from the horizontal transfer unit 3 and outputting the amplified video output signal from the CCD 10. Have.

Each operation of the CCD 10 is controlled by a signal output from a timing generation circuit 20. The imaging device captures light exposed to the solid-state imaging device for a predetermined period after the trigger signal is input by a trigger signal input from outside the solid-state imaging device, and outputs the light as a video signal from the solid-state imaging device. The circuit 20
An XSG pulse signal for transferring the charge stored in the photodiode 1 from the photodiode 1 to the vertical transfer unit 2 is output according to the input trigger signal, original signal, and horizontal synchronization pulse signal. Further, the timing generation circuit 20 performs the charge transfer in the vertical transfer unit 2 and the charge transfer from the vertical transfer unit 2 to the horizontal transfer unit 3.
A vertical transfer pulse signal is generated and output. Further, the timing generation circuit 20 temporarily sweeps out the charge accumulated in the photodiode, and resets the photodiode to a state in which the photodiode has no accumulated charge.
It generates and outputs a SUG signal.

Next, the operation will be described with reference to FIG. 3 showing an example of the signal waveform of each signal shown in the above-described block configuration example. First, before starting the accumulation operation (B in the figure) of the charge obtained by photoelectric conversion and started to accumulate in synchronization with the trigger signal (hereinafter also referred to as trigger accumulation charge), the vertical transfer unit of the solid-state imaging device starts. A transfer operation, in particular, a high-speed transfer operation (A in the figure) that is faster than the speed at which one pixel is vertically transferred every one horizontal line transfer cycle when outputting a video signal is performed. By doing so, the unnecessary charges (hereinafter, also referred to as unnecessary charges) accumulated in the vertical transfer unit are swept out from the vertical transfer unit. And
After the end of the sweeping operation, the operation (B in the drawing) of accumulating charges (trigger accumulated charges) obtained by photoelectrically converting the light exposed to the above-described photodiode is started. Further, the trigger accumulated charge is transferred from the photodiode to the vertical transfer unit, and the transferred charge is output from the solid-state imaging device as an output signal (C in the figure). The transfer speed of the vertical transfer pulse signal at the time of this output operation is 1 as described above.
This is the speed at which one pixel is vertically transferred every horizontal line transfer cycle.

By doing so, the unnecessary charges already stored in the vertical transfer unit regardless of the external trigger signal input timing are not superimposed on the trigger stored charges transferred from the photodiode to the vertical transfer unit. Therefore, there is no possibility that an output signal accompanied by unnecessary imaging content due to superimposition of unnecessary charges is output from the solid-state imaging device.

As a result, unnecessary charges which cause a smear phenomenon by being accumulated in, for example, a vertical transfer section are swept away in advance, so that a smear signal is not output from the solid-state image sensor as an output signal. ,
A higher quality video signal free from smearing can be obtained.

[0009]

In the above-mentioned prior art,
Charges (unnecessary charges) accumulated in the vertical transfer unit before the accumulation of charges (trigger accumulation charges), which are charges obtained by photoelectric conversion and started to be accumulated in synchronization with the trigger signal (trigger accumulation charges)
Is transferred from the vertical transfer unit, a transfer operation in the vertical transfer unit, preferably a high-speed transfer operation is performed.

Therefore, the above-described high-speed transfer operation is performed after the trigger signal is input, and the charge accumulation of the photodiode is started after the operation is completed.

As described above, according to the conventional technique, even when the accumulation is started in synchronization with the input of the trigger signal,
After the trigger signal is input, the accumulation is finally started after the high-speed transfer operation of the vertical transfer unit is completed. Therefore, when the high-speed transfer operation requires a relatively long period of time, for example, when a period that is 76 times the horizontal scanning period is required, the accumulation operation is naturally not started during that period. In order to enable the accumulation of the trigger accumulation charge to start after a short period, it may not be possible to start the operation within a required period.

An object of the present invention involves a charge sweeping operation of a vertical transfer section of a solid-state imaging device in which unnecessary charges are accumulated.
In the case of performing imaging synchronized with an external trigger signal, it is to shorten the period from the input of the trigger signal to the output of the solid-state image sensor output signal.

[0013]

SUMMARY OF THE INVENTION In order to solve the above-mentioned problems, the present invention relates to a method of driving a charge transfer type solid-state imaging device, comprising the steps of: receiving a trigger signal; In the predetermined period of time, the light incident on the photodiode of the solid-state imaging device is photoelectrically converted, and the charge obtained by the photoelectric conversion is accumulated in the photodiode. In a second predetermined period after the first predetermined period, 1 In the method of outputting the accumulated electric charges for a screen from the solid-state imaging device, in a predetermined period other than the first predetermined period, or in a predetermined period other than the first predetermined period and the first predetermined period. The charge transfer operation of the vertical transfer unit of the solid-state imaging device is performed during a period including a predetermined period from the start.

In the present invention, the charge transfer operation of the vertical transfer unit during the second predetermined period may include: transferring the charge accumulated during the first predetermined period and transferred from the photodiode to the vertical transfer unit. The transfer of one pixel is performed at a transfer cycle of one line in the horizontal transfer unit of the solid-state imaging device, and the charge transfer operation of the vertical transfer unit in a period other than the second predetermined period includes the charge in the second predetermined period. The charge transfer operation is performed at a higher speed than the transfer operation.

According to the present invention, furthermore, in a period during which the charge transfer operation of the vertical transfer section is repeatedly and continuously performed, and during a period other than the first predetermined period, the charge of the photodiode of the solid-state imaging device is discharged. The operation is repeatedly and continuously performed.

According to another aspect of the present invention, there is provided a method of driving a charge transfer type solid-state image pickup device.
A trigger signal is input, and in a first predetermined period after the input of the trigger signal, light incident on the photodiode of the solid-state imaging device is photoelectrically converted, and a charge obtained by photoelectric conversion is accumulated in the photodiode. In a method for outputting the accumulated electric charges for one screen from the solid-state imaging device in a second predetermined period after one predetermined period, the method includes the steps of: starting from the input of the trigger signal until before the start of the second predetermined period; A vertical transfer of the solid-state imaging device during a third predetermined period in which a part or all of the predetermined period overlaps a part or all of the first predetermined period. The charge transfer operation of the section is performed.

In the present invention, the charge transfer operation of the vertical transfer unit during the third predetermined period may include transferring the charge accumulated during the first predetermined period and transferred from the photodiode to the vertical transfer unit to the solid state. The charge transfer operation is faster than the charge transfer operation of transferring one pixel at a transfer cycle of one line in the horizontal transfer unit of the image sensor.

Further, in the present invention, at least during the first predetermined period, the charge discharging operation of the photodiode of the solid-state imaging device is not performed.

Further, in order to solve the above-mentioned problems, the present invention provides an image pickup apparatus using a charge transfer type solid-state image pickup device having a photodiode and a vertical transfer section for transferring charges accumulated in the photodiode. And a means for inputting a trigger signal, and in response to the trigger signal input to the trigger input means, during a first predetermined period after the input,
Means for accumulating charges obtained by photoelectrically converting light incident on the photodiodes of the solid-state imaging device in the photodiodes, and for a second predetermined period after the first predetermined period, for one screen. An imaging device having means for outputting the accumulated charge from the solid-state imaging device, wherein the first predetermined period other than the first predetermined period or the predetermined period other than the first predetermined period is different from the first predetermined period. A means for generating a vertical transfer pulse signal for performing a charge transfer operation of the vertical transfer unit of the solid-state imaging device during a period including a predetermined period from the start of the period.

Further, in order to solve the above-mentioned problem, the present invention provides an image pickup apparatus using a charge transfer type solid-state image pickup device having a photodiode and a vertical transfer section for transferring charges accumulated in the photodiode. And a means for inputting a trigger signal, and in response to the trigger signal input to the trigger input means, during a first predetermined period after the input,
Means for accumulating charges obtained by photoelectrically converting light incident on the photodiodes of the solid-state imaging device in the photodiodes, and for a second predetermined period after the first predetermined period, for one screen. Means for outputting the accumulated charge from the solid-state imaging device, wherein the predetermined period is between the input of the trigger signal and before the start of the second predetermined period, and A charge transfer operation of the vertical transfer unit of the solid-state imaging device during a third predetermined period in which a part or the entirety thereof overlaps a part or the whole of the first predetermined period. It has means for generating a vertical transfer pulse signal.

[0021]

Embodiments of the present invention will be described below with reference to the drawings. FIG. 4 is a diagram showing an example of a block configuration of a solid-state imaging device of an imaging device according to the present invention and a drive circuit thereof. In this figure, 10 'is a solid-state imaging device,
Reference numeral 41 denotes a timing control circuit which receives a trigger signal and generates and outputs a switching control signal, a frequency control signal, and an XSG pulse signal for timing control in the imaging apparatus. 42
Is used to input a source signal as a reference clock, and convert the vertical transfer pulse signals XV1 ', XV2', XV3 'at a speed corresponding to the frequency control signal from the timing control circuit 41 into an externally input horizontal synchronization pulse signal. This is a vertical transfer pulse generation circuit that generates and outputs in synchronization. 43 is a vertical transfer pulse signal XV from the vertical transfer pulse generation circuit 42.
1 ', XV2' and XV3 'are input, and the low level voltages and the vertical transfer pulse signals XV1', XV2 'and XV3' are inputted according to the switching control signal from the timing control circuit.
And a switch for simultaneously outputting new vertical transfer pulse signals XV1, XV2 and XV3. Reference numeral 44 denotes a switch that receives the above-described horizontal synchronization pulse signal and switches between a low-level voltage and a horizontal synchronization pulse signal in response to a switching control signal from a timing control circuit, and outputs a new VSUB signal. . 45
Are the vertical transfer pulse signals XV1 ', XV2', XV3 '
, An XSG pulse signal and a VSUB signal, and generates and outputs vertical transfer pulse signals V1, V2, V3 and a SUB signal whose waveforms have been shaped for driving the solid-state imaging device 10 'at the subsequent stage. The operation timings of the vertical transfer pulse signals V1, V2, V3 and the SUB signal correspond to the vertical transfer pulse signals XV1 ', XV2', XV3 'and XV input to the vertical drive circuit 45.
Since the operation timings of the SG pulse signal and the VSUB signal are substantially equivalent to each other, the following description will be made using a signal input to the vertical drive circuit 45.

Next, as shown in the above block configuration example,
An example of the operation of the solid-state imaging device and its driving circuit during the external trigger input operation of the present invention will be described with reference to FIG.

First, in a period a before the trigger signal is input, C
The vertical transfer operation is continuously and repeatedly performed in the vertical transfer unit 2 of the CD 10 '. Therefore, in this period a, the vertical transfer pulse signal XV1 ′ having a speed for performing the transfer operation of the vertical transfer unit 2 of the solid-state imaging device, particularly the high-speed transfer operation, is provided.
XV2 ′ and XV3 ′ are generated by the vertical transfer pulse generation circuit 42 and output to the vertical transfer pulse signal XV1,
XV2 and XV3 are input to the vertical drive circuit 45 (D in the figure). The pulse speed is selectively controlled by a frequency control signal from the timing control circuit 41.

In the example of this figure, the charge sweeping operation of the photodiode of the solid-state imaging device is repeatedly and continuously performed at a predetermined period, for example, every period of the horizontal synchronizing pulse signal in the period a. Therefore, in this period a, the input of the horizontal synchronizing pulse signal from the switch 44 is selected and output as the VSUB signal. However, even if the charge sweeping operation is not performed during this period a, the charge sweeping operation is performed at least once after the trigger signal is input and before the charge accumulation by the exposure light in the desired period in the photodiode is started. The operation may be performed.

In this period a, by performing the transfer operation of the vertical transfer unit 2, particularly preferably the high-speed transfer operation, unnecessary charges (smear component charges) which cause smear and are accumulated in the vertical transfer unit 2 are removed. Since the charge is not accumulated and continues to be swept out, the charge accumulated within the desired exposure period can be transferred by the vertical transfer unit without being added to the smear component charge after the trigger input. In the case where the trigger signal is repeatedly input from the outside of the imaging apparatus and the sweeping operation is not performed repeatedly a plurality of times due to the transfer efficiency, if the charge of the smear component is not reduced to a predetermined amount, for example, the above-mentioned case is not satisfied. By performing the high-speed transfer as described above, the charge of the smear component can be reduced more quickly. Therefore, even if the repetitive input period of the trigger signal from the outside is made shorter, it is possible to obtain an image free from smear.

In the period b after the input of the next trigger signal, an operation of accumulating charges (E in the figure) obtained by photoelectrically converting the light exposed on the photodiode 1 is performed. During this period, the Low voltage is selectively output from the switch 44, and the Low level fixed VSUB signal is input to the vertical drive circuit 45, so that the charge discharging operation of the photodiode 1 is not performed. Note that during a part of a predetermined time after the start of the period b, the transfer operation of the vertical transfer unit 2 performed in the period a described above, in particular, the high-speed transfer operation (D ′ in the drawing)
May be performed.

In the remaining period after the above-described partial period, the switch 43 selectively outputs the Low voltage, so that the low level fixed vertical transfer pulse signal XV 1,
XV2 and XV3 are input to the vertical drive circuit 45, and the transfer operation of the vertical transfer unit 2 of the CCD 10 'is not performed.

In this accumulation period, accumulation can be started in a shorter period from the timing of input of the trigger signal than in the above-mentioned conventional accumulation period, and after a shorter elapsed period from the phenomenon that caused the generation of the trigger signal. An image can be captured.

In the next period c, the charges accumulated in the period b are transferred from the photodiode 1 to the vertical transfer unit 2, and the transferred charges are output from the solid-state imaging device 10 'as a video output signal (G in the figure). ) Is done.

The period d is a period from the output of the video signal for one screen to the input of the next trigger signal. The operation is the same as the period a described above, and the description is omitted here.

Next, as shown in the above block configuration example,
Another example of the operation of the solid-state imaging device and its driving circuit at the time of the external trigger input operation of the present invention will be described with reference to FIG.

First, in a period e before the trigger signal is input, C
The vertical transfer operation is not performed in the vertical transfer unit 2 of the CD 10 '. Further, in the example of this figure, the charge sweeping operation of the photodiode 1 of the solid-state imaging device is repeatedly and continuously performed at a predetermined period, for example, every period of the horizontal synchronization pulse signal in this period a. Therefore, in this period a, the horizontal synchronizing pulse signal input is selected from the switch 44 and VSUB is selected.
It is output as a signal. However, this period a
Even if the above-described charge sweeping operation is not performed, at least once during the period (H ′ in the figure) after the input of the trigger signal and before the start of the charge accumulation by the exposure light in the desired period in the photodiode. The above-described charge sweeping operation may be performed. In the example shown in FIG.
Although the vertical transfer operation is not performed in the vertical transfer unit 2 of 0 ′, it may be the same as the operation in the period a described with reference to FIG.

Next, in the period f and the period g after the input of the trigger signal, the vertical transfer operation is continuously and repeatedly performed in the vertical transfer unit 2 of the CCD 10 '. Therefore, in the periods f and g, the vertical transfer pulse signals XV1 ', XV2', and XV3 'having a speed for performing the transfer operation of the vertical transfer unit 2 of the solid-state imaging device, particularly the high-speed transfer operation, are generated by the vertical transfer pulse generation circuit. It is generated at 42 and becomes vertical transfer pulse signals XV1, XV2 and XV3 via the switch 43 and is input to the vertical drive circuit 45 (I in the figure). The pulse speed is selectively controlled by a frequency control signal from the timing control circuit 41.

In the period f and the period g, the transfer operation of the vertical transfer unit 2, particularly, preferably, the high-speed transfer operation is performed, so that unnecessary charges (smear component of smear component) causing smear accumulated in the vertical transfer unit 2 are generated. Since the charges are not accumulated and are continuously swept out, the charges accumulated during the desired exposure period can be transferred by the vertical transfer unit without being added to the charges of the smear component after the period g. .

In the period f, the charge sweeping operation of the photodiode 1 of the solid-state imaging device is performed at a predetermined cycle, for example, every cycle of the horizontal synchronizing pulse signal. Therefore, in this period f, the input of the horizontal synchronizing pulse signal is selected from the switch 44 and output as the VSUB signal. However, if the charge sweeping operation is performed in the period e before the trigger signal is input, the charge sweeping operation may not be performed in the period f.

In the periods g and h, a charge accumulation operation (J in the drawing) obtained by photoelectrically converting the light exposed to the photodiode 1 is performed in the same manner as the period b. During this period, the switch 44 selectively outputs the Low voltage,
The low level fixed VSUB signal is output to the vertical drive circuit 4
5, the charge sweeping operation of the photodiode 1 is not performed.

In this accumulation period, accumulation can be started in a shorter period from the timing of the trigger signal input than in the above-mentioned conventional accumulation period, and after a shorter elapsed period from the phenomenon that caused the trigger signal generation. An image can be captured.

In the next period i, the charges accumulated in the periods g and h are transferred from the photodiode 1 to the vertical transfer unit 2, and the transferred charges are output from the solid-state imaging device 10 'as a video output signal ( K) in the figure.

The period j is a period from the output of the video signal for one screen to the input of the next trigger signal. The operation is the same as the above-mentioned period e, and the description is omitted here.

[0040]

As described above, according to the present invention,
The period from the input of the trigger signal to the output of the video signal can be further reduced, and an image pickup apparatus with an external trigger operation that can reduce smear components can be realized.

[Brief description of the drawings]

FIG. 1 is a timing chart for explaining an example of the operation of a solid-state imaging device and its driving circuit during an external trigger input operation of the present invention.

FIG. 2 is a timing chart for explaining another example of the operation of the solid-state imaging device and its driving circuit at the time of the external trigger input operation of the present invention.

FIG. 3 is a timing chart illustrating an example of the operation of a solid-state imaging device and its driving circuit during an external trigger input operation according to a conventional technique.

FIG. 4 is a diagram showing an example of a block configuration of a solid-state imaging device and a driving circuit of the solid-state imaging device of the imaging apparatus according to the present invention.

FIG. 5 is a diagram schematically illustrating an example of a block configuration of a solid-state imaging device and a driving circuit thereof.

[Explanation of symbols]

1: photodiode, 2: vertical transfer unit, 3: horizontal transfer unit, 4: amplifier, 10, 10 ': solid-state imaging device (CC
D), 20: timing generation circuit, 41: timing control circuit, 42: vertical transfer pulse generation circuit, 43, 44:
Switch, 45: vertical drive circuit, A, D, D ', I:
Transfer operation by vertical transfer pulse signal control, B, E, J:
Photodiode storage operation, C, G, K: output operation of video signal.

Continued on the front page (72) Inventor Hideki Kitazawa 32, Miyukicho, Kodaira-shi, Tokyo F-term in the Koganei Plant of Hitachi Electronics Co., Ltd. 4M118 AA05 AB01 BA13 CA02 DB09 FA06 5C024 AA01 CA04 CA17 FA01 GA01 GA16 GA26 GA41 HA09 JA21 JA32

Claims (8)

[Claims] 1. A method for driving a charge transfer type solid-state imaging device, wherein a trigger signal is input, and light incident on a photodiode of the solid-state imaging device during a first predetermined period after the input of the trigger signal. Accumulating the electric charge obtained by photoelectric conversion in the photodiode, and outputting the accumulated electric charge for one screen from the solid-state imaging device in a second predetermined period after the first predetermined period. In the solid-state imaging device, during a predetermined period other than the first predetermined period, or during a predetermined period other than the first predetermined period and a predetermined period from the start of the first predetermined period, A method for driving a solid-state imaging device, wherein a charge transfer operation of a vertical transfer unit is performed. 2. The method for driving a solid-state imaging device according to claim 1, wherein the charge transfer operation of the vertical transfer unit in the second predetermined period is performed during the first predetermined period and stored in the photodiode from the photodiode. The charge transferred to the transfer unit is transferred by one pixel at a transfer cycle of one line in the horizontal transfer unit of the solid-state imaging device, and the charge transfer operation of the vertical transfer unit is performed in a period other than the second predetermined period. A method for driving a solid-state imaging device, comprising: performing a charge transfer operation faster than the charge transfer operation in the second predetermined period. 3. The method for driving a solid-state imaging device according to claim 1, wherein the charge transfer operation of the vertical transfer unit is performed repeatedly and continuously, and the charge transfer operation is performed in a period other than the first predetermined period. A method for driving the solid-state imaging device, wherein a charge sweeping operation of the photodiode of the solid-state imaging device is repeatedly and continuously performed during the period. 4. A method for driving a charge transfer type solid-state imaging device, wherein a trigger signal is input and light incident on a photodiode of the solid-state imaging device during a first predetermined period after the input of the trigger signal. Accumulating the electric charge obtained by photoelectric conversion in the photodiode, and outputting the accumulated electric charge for one screen from the solid-state imaging device in a second predetermined period after the first predetermined period. , A predetermined period existing after the trigger signal is input and before the start of the second predetermined period, and a part or all of the predetermined period and a part or all of the first predetermined period A charge transfer operation of the vertical transfer unit of the solid-state imaging device is performed during a third predetermined period in which the overlap occurs. 5. The method for driving a solid-state imaging device according to claim 4, wherein the charge transfer operation of the vertical transfer unit during the third predetermined period is performed during the first predetermined period. The charge transfer operation is performed at a higher speed than the charge transfer operation in which the charge transferred to the vertical transfer unit is transferred by one pixel at a transfer cycle of one line in the horizontal transfer unit of the solid-state imaging device. A method for driving a solid-state imaging device. 6. The method for driving a solid-state imaging device according to claim 4, wherein a charge discharging operation of a photodiode of the solid-state imaging device is not performed at least during the first predetermined period. A method for driving a solid-state imaging device. 7. An image pickup apparatus using a charge transfer type solid-state image pickup device having a photodiode and a vertical transfer unit for transferring charges accumulated in the photodiode,
Means for inputting a trigger signal; and light incident on the photodiode of the solid-state imaging device is photoelectrically converted in a first predetermined period after the input in accordance with the trigger signal input to the trigger input means. Means for accumulating the obtained charges by the photodiode, and means for outputting the accumulated charges for one screen from the solid-state imaging device during a second predetermined period after the first predetermined period. In the imaging device, the solid-state imaging is performed in a predetermined period other than the first predetermined period, or in a predetermined period other than the first predetermined period and a predetermined period from the start of the first predetermined period. An imaging apparatus comprising: means for generating a vertical transfer pulse signal for performing a charge transfer operation of a vertical transfer unit of an element. 8. An image pickup apparatus using a charge transfer type solid-state image pickup device having a photodiode and a vertical transfer unit for transferring charges accumulated in the photodiode,
Means for inputting a trigger signal; and light incident on the photodiode of the solid-state imaging device is photoelectrically converted in a first predetermined period after the input in accordance with the trigger signal input to the trigger input means. Means for accumulating the obtained charges by the photodiode, and means for outputting the accumulated charges for one screen from the solid-state imaging device during a second predetermined period after the first predetermined period. In the imaging device, a predetermined period existing after the trigger signal is input and before the start of the second predetermined period, and a part or all of the predetermined period and a part of the first predetermined period Alternatively, there is provided an imaging apparatus having means for generating a vertical transfer pulse signal for performing a charge transfer operation of a vertical transfer unit of the solid-state imaging device during a third predetermined period in which the entirety overlaps. .