JP2000124383A - Resin-sealed semiconductor device and its manufacture - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a terminal land frame which is converted from a conception giving attention to a lead frame in conventional cases and which aims principally at a point to form a 'land' to be used as an external electrode in a frame shape instead of a beam-shaped 'lead' to provide a resin-sealed semiconductor device using the terminal land frame and to provide its manufacturing method. SOLUTION: A terminal land frame is composed of a frame body which is composed of a metal plate. In addition, it is composed of a plurality of land constituent bodies which are arranged and installed inside the region of the frame body, which are connected to the frame body by thin-wall parts and which are formed so as to protrude from the frame body. This resin-sealed semiconductor device is composed of a semiconductor element 23 whose electrode pads are connected to the land constituent bodies 21 via a conductive adhesive 22. In addition, it is composed of a sealing resin 24 which seals the outer circumference of the semiconductor element 23 in such a way that the bottom face of the land constituent bodies 21 protrudes. Thereby, it is possible to realize the resin-sealed semiconductor device which does not use a lead body, which comprises land electrodes arranged at high density on the bottom face by a frame using a land body, which is equal to a chip size by a flip-chip mounting operation and which is made small and thin.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a terminal land frame, which is a frame having a land body serving as an external terminal, in place of a conventional lead frame having beam-shaped leads. The present invention relates to a resin-encapsulated semiconductor device in which a semiconductor element is mounted on a semiconductor device and the outer periphery is sealed with a resin, and a method of manufacturing the same.

[0002]

2. Description of the Related Art In recent years, in order to cope with miniaturization of electronic equipment, high-density mounting of semiconductor components such as resin-encapsulated semiconductor devices has been required.
Thinning is progressing. In addition, the number of pins has been increased while being small and thin, and a high-density small and thin resin-sealed semiconductor device has been demanded.

Hereinafter, a lead frame used in a conventional resin-encapsulated semiconductor device will be described.

FIG. 12 is a plan view showing the structure of a conventional lead frame. As shown in FIG. 12, a conventional lead frame includes a frame 1 and a frame 1 inside the frame.
A rectangular die pad portion 2 on which a semiconductor element is mounted, a suspension lead portion 3 supporting the die pad portion 2, and when a semiconductor element is mounted, the semiconductor element is electrically connected to the mounted semiconductor element by a connecting means such as a thin metal wire. A beam-shaped inner lead portion 4 to be electrically connected, an outer lead portion 5 provided continuously with the inner lead portion 4, and connected to an external terminal;
The outer lead portions 5 were connected and fixed to each other, and were constituted by a tie bar portion 6 serving as a resin stopper at the time of resin sealing.

[0005] The lead frame is not formed of one pattern having the structure shown in FIG.
They are arranged vertically continuously.

Next, a conventional resin-encapsulated semiconductor device will be described. FIG. 13 is a cross-sectional view showing a resin-sealed semiconductor device using the lead frame shown in FIG.

As shown in FIG. 13, a semiconductor element 7 is mounted on a die pad section 2 of a lead frame, and the semiconductor element 7 and the inner lead section 4 are electrically connected by a thin metal wire 8. The outer periphery of the semiconductor element 7 and the inner lead portion 4 on the die pad portion 2 is sealed with a sealing resin 9. An outer lead portion 5 is provided so as to protrude from a side surface of the sealing resin 9, and a front end portion is bent.

In a conventional method of manufacturing a resin-encapsulated semiconductor device, as shown in FIG. 14, a semiconductor element 7 is bonded onto a die pad portion 2 of a lead frame by an adhesive (die bonding step), The distal end portion of the inner lead portion 4 is connected with the thin metal wire 8 (wire bonding step). After that, the outer periphery of the semiconductor element 7 is sealed, and the sealing region is sealed with the sealing resin 9 in the region surrounded by the tie bar portion 6 of the lead frame, and the outer lead portion 5 is projected outside. Sealing (resin sealing step). Then, the boundary portion of the sealing resin 9 is cut with the tie bar portion 6, each outer lead portion 5 is separated, the frame 1 is removed, and the tip of the outer lead portion 5 is bent (tie bar cut / bend). Step), FIG.
Can be manufactured. Here, in FIG. 14, a region indicated by a broken line is a region to be sealed with the sealing resin 9.

[0009]

However, in the conventional lead frame, when the semiconductor element is highly integrated and the number of pins is increased, there is a limit in forming the width of the inner lead portion (outer lead portion). In order to cope with the problem, the number of inner lead portions (outer lead portions) increases, so that the lead frame itself becomes large, and as a result, the size of the resin-encapsulated semiconductor device also increases. There is a problem that a fixed semiconductor device cannot be realized. In addition, when increasing the number of inner leads without changing the size of the lead frame in order to support multiple pins of the semiconductor element, the width of each inner lead must be reduced, and etching of the lead frame may be performed. There are many problems in processing.

Recently, as a surface mount type semiconductor device, a semiconductor element is mounted on a carrier (wiring board) having an external electrode provided on a bottom surface, and after electrical connection is made, the upper surface of the carrier is sealed with a resin. Semiconductor devices such as ball grid array (BGA) type and land grid
There is an array (LGA) type semiconductor device. This type of semiconductor device is a semiconductor device mounted on a motherboard on the bottom side, and such a surface mount type semiconductor device is becoming mainstream in the future. Therefore, in order to cope with such a trend, a big problem that a conventional lead frame and a resin-sealed semiconductor device using the lead frame cannot be dealt with has become apparent.

In a conventional resin-encapsulated semiconductor device, an external lead formed of an outer lead portion is provided on a side surface of a sealing resin, and the external lead and a substrate electrode are bonded and mounted. The reliability of board mounting is lower than that of BGA type and LGA type semiconductor devices. In addition, since BGA type and LGA type semiconductor devices use a wiring board, there is a problem that the cost is high.

The present invention provides a resin-encapsulated semiconductor device using a frame-type package material which can cope with the above-mentioned conventional problems and future trends in semiconductor devices. Using a frame body. The terminal land frame, which focuses on forming a frame-shaped external land as a land instead of a beam-shaped lead, and a resin that uses the terminal land frame. An object of the present invention is to provide a sealed semiconductor device and a method for manufacturing the same. Furthermore, the present invention
Eliminating the lead cutting step and the lead bending step as in the past, a resin-encapsulated semiconductor device can be easily obtained,
A resin-encapsulated semiconductor device can be manufactured at low cost.

[0013]

In order to solve the above-mentioned conventional problems, a resin-encapsulated semiconductor device according to the present invention is provided with a frame main body made of a metal plate and a grid arranged in a region of the frame main body. A resin-sealed semiconductor device formed by using a terminal land frame comprising a plurality of land components formed to be connected to the frame main body by a thin portion and protruding from the frame main body. ,
A semiconductor element whose electrode pads are respectively connected to the land structure via a conductive adhesive, and a sealing resin that protrudes a bottom surface of the land structure and seals an outer periphery of the semiconductor element. The amount of protrusion of each land constituent group from the sealing resin is an amount obtained by subtracting the amount by which the land constituent group protrudes from the frame main body from the thickness amount of the frame main body. It is.

According to the present invention, the area of the top surface of the land structure on the side sealed with the sealing resin is larger than the area of the bottom surface of the land structure on the side exposed from the sealing resin. The edge portion on the upper surface of the land structure on the other side is a resin-sealed semiconductor device having a curved surface.

Further, the present invention is a resin-sealed semiconductor device in which the semiconductor element has a protruding electrode on its electrode pad, and the protruding electrode is connected to the land structure via a conductive adhesive. .

According to the present invention, the land structure on the side sealed with the sealing resin has a mushroom shape with a flat upper surface, and the resin sealing with the sealing resin has an anchor effect. It is a stop type semiconductor device.

According to the method of manufacturing a resin-encapsulated semiconductor device of the present invention, a frame main body made of a metal plate is disposed in a lattice shape in a region of the frame main body, and connected to the frame main body by a thin portion. And a plurality of land constituent groups formed so as to protrude from the frame main body, and the land constituent group is broken by a pressing force in a direction protruding from the frame main body, whereby the thin portion is broken and the land structure is formed. Preparing a terminal land frame having a structure in which a body group is separated from the frame main body; and flip-chip connecting a semiconductor element to the projecting side of the land structure of the terminal land frame via a conductive adhesive. And sealing only the upper surface side of the terminal land frame around the semiconductor element with a sealing resin. Forming a body device, applying a pressing force from the bottom surface side of the frame body to the bottom surface side of the land structure in a state where the frame body of the terminal land frame is fixed, and forming the land structure and the frame. The method comprises a step of breaking a thin portion connecting the main body and separating the resin-encapsulated semiconductor device from the frame main body.

As described above, in the resin-encapsulated semiconductor device of the present invention, the land components are arranged on the bottom surface, and the land components are provided so as to protrude from the bottom surface of the sealing resin.
In this case, a standoff at the time of mounting the substrate is formed. Here, the amount of protrusion of the land structure of the resin-encapsulated semiconductor device is the amount obtained by subtracting the amount by which the land structure protrudes from the thickness of the frame main body. It is formed in a self-aligned manner by using a land frame. The land structure has a mushroom shape with a flat upper surface, has good bite with the sealing resin, has increased adhesion to the resin, and has improved reliability.

Further, by using the terminal land frame of the present invention, in the method of manufacturing a resin-encapsulated semiconductor device of the present invention, the semiconductor element is mounted and sealed with resin, and then the land structure portion is viewed from below. By simply removing the frame itself by pushing up, land electrodes electrically connected to the semiconductor elements can be arranged on the bottom surface of the resin-encapsulated semiconductor device. In addition, no resin burr is generated on the land structure during resin sealing, and a step of removing the resin burr is not required, so that a post-process is not required.

According to the present invention, a semiconductor device is flip-chip mounted on a terminal land frame, and each land structure is connected to an electrode pad of the semiconductor device. Thus, a thin resin-sealed semiconductor device is realized.

[0021]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of a resin-sealed semiconductor device and a method for manufacturing the same according to the present invention will be described below with reference to the drawings.

First, a terminal land frame used in the resin-sealed semiconductor device of the present invention will be described.

FIG. 1 is a plan view showing a terminal land frame of the present embodiment. FIG. 2 is a sectional view showing the terminal land frame of the present embodiment.
The section of AA1 part is shown. FIG. 3 is an enlarged cross-sectional view showing a land structure in FIG.

As shown in the figure, the terminal land frame of this embodiment has a frame main body 10 made of a copper plate or a metal plate used for a normal lead frame such as a 42-alloy, and an area within the frame main body 10. Are arranged in a lattice pattern corresponding to the bonding pad arrangement of the semiconductor elements, and are connected to the frame body 10 by the thin portion 11;
In addition, it comprises a plurality of land structures 12 formed to protrude from the frame body 10. That is, the frame body 10, the land structure 12, and the thin portion 11 are integrally formed from the same metal plate. The land structure 12 has a configuration in which the thin portion 11 is broken by a pressing force in a direction protruding from the frame body 10 and the land structure 12 is separated from the frame body 10. The layout of the land structures 12 may be a grid-like grid pattern, a staggered grid pattern, or a random plane pattern. However, the layout may correspond to the layout of the electrode pads of the semiconductor elements to be mounted. adopt. The land structure 12 has a mushroom shape with a flat top surface. With this structure, when a semiconductor element is mounted on this terminal land frame and sealed with a resin, the land land frame 12 is sealed. Since the bite between the sealing resin and the land structure is improved and the anchor effect is increased, the reliability can be improved.

As shown in FIG. 3, by applying a pressing force in a protruding direction to the bottom surface portion 12a of the land structure 12, the thin portion 11 is broken at a broken line portion, and The land structure 12 is separated from the main body 10. Here, the thin portion 11 is a "joining portion" formed by a half-cutting means of a punching process with respect to the frame body 10 itself, and a portion of the frame body 10 where a land structure is to be formed is punched using a punch member. It is processed, not completely punched out, but is stopped halfway, preferably by about half the punching, the part punched out halfway projects from the frame body 10, and the projecting part constitutes the land structure 12 and the frame body 10 The connecting portion that is connected without being cut off constitutes the thin portion 11. Therefore, the thin portion 11 is extremely thin,
The thin portion 11 has a thickness such that the thin portion 11 is broken just by applying a pressing force in a protruding direction to the bottom surface portion 12a of the land structure 12.

Further, the land structure 12 formed so as to protrude from the frame main body 10 has a protruding amount that is more than a majority of the thickness of the frame main body 10 itself.
The configuration is such that the thin portion 11 is broken by the pressing force in the direction in which the land component 12 protrudes from the frame main body 10, and the land component 12 is separated from the frame main body 10. For example, in the present embodiment, the thickness of the terminal land frame itself, that is, the thickness of the frame body 10 is set to 200 [μm], and the land structure 12
Is set to 140 [μm] to 180 [μm] (70 [%] to 90 [%] of the thickness of the frame body). The thickness of the frame body 10 is not limited to 200 [μm].
[Μm] frame, which can be set as appropriate. Also, the projecting amount of the land structure 12 is not limited to the projecting amount of the majority, but may be the projecting amount of the half or less.
What is necessary is just to comprise so that the thin part 11 may be broken by press.

The surface of the terminal land frame of the present embodiment is plated, and if necessary, for example, nickel (Ni), palladium (Pd)
And a metal such as gold (Au) is laminated and appropriately plated. The plating process may be performed after the land structure 12 is formed, or may be performed before the land structure is formed on the metal plate. Also, the surface roughness of the terminal land frame is extremely flat and is 0.1 [μm] or less, which affects the releasability from the sealing resin. It is necessary to avoid unnecessary unevenness. The plating may be performed after the land structure 12 is formed, or may be performed on the frame before the land structure 12 is formed.

The number of land structures 12 can be appropriately set according to the number of pins (number of electrode pads) of the semiconductor element to be mounted. Then, as shown in FIG. 1, the land structure 12 is formed in the region of the frame main body 10, but can be formed continuously in the left, right, up and down directions.
In addition, although the shape of the land structure 12 is circular, it may be square or rectangular, and the size may be all the same in the terminal land frame, or may constitute a resin-encapsulated semiconductor device and serve as a land electrode. In this case, in order to relieve stress at the time of mounting the substrate, the land structure 1
2 may be increased. In the present embodiment, the size of the top surface of the land structure 12 is set to 10 according to the size of the electrode pad as an electrical connection structure with the semiconductor element.
The size is about 0 [μm] φ.

Further, the terminal land frame shown in the present embodiment does not have the inner lead portion, the outer lead portion, the die pad portion and the like as in the prior art, has the land structure 12 as the land electrode, and has the land structure. By arranging the bodies 12 in a lattice or staggered pattern on the surface on which the semiconductor elements are mounted, a resin-encapsulated semiconductor device is formed using this terminal land frame. It is possible to realize a fixed semiconductor device. Further, since the configuration serving as the electrode is not the beam-shaped lead configuration but the land configuration 12 as in the related art, they can be arranged in a plane, and the degree of freedom in the arrangement of the land configuration 12 is improved. It is possible to cope with the increase in the number of pins. Of course, depending on the number of pins of the semiconductor element, the land members 12 may be arranged in series without being arranged in area.

The terminal land frame of the present embodiment shown in FIG. 1 corresponds to the arrangement of the electrode pads of the semiconductor element to be mounted. The configuration of the terminal land frame shown in FIG. A semiconductor element 14 having an array of area pad-shaped electrode pads 13 as shown is employed, and a semiconductor having an arrangement of peripheral pad-shaped electrode pads 13 as shown in FIG. The terminal land frame employed when mounting the element 15 is provided on the land body 1 in the frame body 10 so as to correspond to the peripheral electrode pads as shown in FIG.
2 uses a terminal land frame having a structure arranged in an outer peripheral arrangement.

In the description of this embodiment, a mode in which the semiconductor element shown in FIG. 4 is mounted on the terminal land frame shown in FIG. 1 will be described.

Next, a method for manufacturing the terminal land frame according to the present embodiment will be described. 7 and 8 are cross-sectional views illustrating a method of manufacturing the terminal land frame according to the present embodiment, and are cross-sectional views illustrating a land structure.

First, as shown in FIG. 7, a metal plate 16 serving as a frame body of a terminal land frame is placed on a die 17 of a punching die, and is pressed from above the metal plate 16 by a pressing die 18. Here, in FIG.
7 is provided with an opening 19 for punching. Further, a punch member 20 is provided above the metal plate 16, and when the metal plate 16 is pressed and punched by the punch member 20, the pressed portion of the metal plate 16 is placed in the opening 19. It has a punched-out structure.

Next, as shown in FIG. 8, the metal plate 16 fixed at a predetermined position on the die portion 17 is punched by pressing with a punch member 20 from above.
A part of the metal plate 16 is pressed so as to protrude toward the opening 19 on the die portion 17 side, and a predetermined portion of the metal plate 16 is cut in a half-cut state to form the land structure 12. Here the thin part 1
1 and remains connected to the metal plate 16 and the metal plate 1
6 is a land structure 12 protruding from the main body.
Is formed. Also, here, the land structure 12
For this, coining processing may be performed, and the projecting upper surface of the land structure 12 may be press-formed to form the mushroom-shaped land structure 12 having a flat upper surface. In this case, when the semiconductor element is mounted on the terminal land frame and sealed with the resin, the bite between the sealing resin and the land structure is improved, and the anchor effect is increased, so that the reliability of the product is improved. be able to.

In this embodiment, when a part of the metal plate 16 is punched by the punch member 20, the pressing of the punch member 20 is stopped during the punching without completely punching.
A half-cut state is formed, and the pressed portion of the metal plate 16 is connected to the main body of the metal plate 16 and left without being separated. The land structure 12 of the metal plate 16
The contact area of the punch member 20 that comes into contact with the portion where the metal plate 16 is formed is smaller than the opening area of the opening 19 provided in the die portion 17. In the step of forming the protruding land structure 12, the area of the upper surface portion 12b of the land structure 12 protruding from the metal plate 16 is larger than the area of the bottom surface portion 12a of the land structure 12 connected to the metal plate 16 side. The edge of the upper surface of the land structure 12 on the protruding side of the land structure 12 has a curved surface formed by cutting out.
Is formed. With this structure, the formed land component 12 is easily separated by the pressing force in the direction in which it protrudes, that is, the pressing force from the bottom surface portion 12a side of the land component 12, In addition, the structure does not separate according to the direction in which it protrudes, that is, the pressing force from the upper surface portion 12b of the land structure 12, and has a structure that separates only into the pressing force from one direction.

In the present embodiment, when the land structure 12 is formed on the metal plate 16, the amount of protrusion of a part of the metal plate 16 is set to be more than a half of the thickness of the metal plate 16 itself. In the embodiment, 140 [μm] to 180 [μm] with respect to the thickness of the metal plate 13 of 200 [μm].
[Μm] (70 [%] to 90% of the thickness of the metal plate itself)
[%]) The protruding land structure 12 is formed. Therefore, the protruding land structure 12 is provided with a very thin portion 11 with respect to the main body of the metal plate 16.
Means that they are connected. In the present embodiment, the thickness of the thin portion 11 is 20 [μm] to 60 [μm].
(10 [%] to 30 [%] of the thickness of the metal plate itself), and can be easily separated by the pressing force in the direction in which the land structure 12 itself protrudes.

Here, a description will be given of half-cutting when forming the land structure 12 of the present embodiment. When the land structure 12 is formed on the metal plate 16, the land structure 12 portion of the metal plate 16 includes a punching sag portion generated by punching with the punch member 20 and a shearing portion sheared by the punch member 20. In addition, the land structure 12 itself has a break portion which becomes a fracture surface when the land structure 12 is easily separated by a pressing force in a protruding direction.
As for the formation of the land structure 12, when punching is performed by the punch member 20, the land forming body 12 is formed in the order of a punching sag portion, a shearing portion, and a breaking portion. The portion to be a broken portion is the thin portion 11, which is shown as having a considerable thickness in the drawing because it is modeled, but is substantially extremely thin. In the punching of the metal plate 16, the ideal state is the punch member 20.
Punches out the metal plate 16 and stops the punch member 20 at the time when half the thickness of the metal plate 16 is punched out, thereby completing the punching. The conditions are set as appropriate.

In the blanking process, by changing the value of the clearance, the length of the sheared portion and the length of the broken portion can be manipulated.
The shear portion can be made larger than the break portion, and conversely, if the clearance is increased, the shear portion can be made smaller than the break portion. Therefore, by setting the clearance to zero and keeping the length of the broken portion short, the metal plate 16
The timing of the completion of the punching can be delayed so that the punching is not completed even if the punch member 20 enters the metal plate 16 by half or more. Here, the clearance indicates the amount of the gap formed by the difference between the size of the punch member 20 and the size of the opening 19.

Next, an embodiment of the resin-sealed semiconductor device of the present invention will be described with reference to the drawings. 9 and 10 are views showing the resin-encapsulated semiconductor device of the present embodiment. FIG. 9 is a sectional view, and FIG. 10 is a bottom view. The cross-sectional view of FIG. 9 corresponds to the bottom view of FIG.
It is a diagram showing a cross section of a portion, and a plan view showing a resin-encapsulated semiconductor device of the present embodiment is only a so-called rectangular shape and is omitted.

As shown in FIGS. 9 and 10, the resin-encapsulated semiconductor device of this embodiment is a semiconductor device having a semiconductor element mounted thereon using the terminal land frame as described above. A semiconductor element 23 mounted and joined with a conductive adhesive 22 such as a silver paste or an insulating adhesive thereon, and a sealing in which the bottom of each land structure 21 is projected to seal the outer periphery of the semiconductor element 23. This is a resin-encapsulated semiconductor device including a sealing resin 24. In the present embodiment, the amount of protrusion of the land structure 21 from the sealing resin 24 is an amount obtained by subtracting the amount of the land structure 21 protruding from the frame body from the thickness of the used terminal land frame body. It has a stand-off when mounted on a substrate.

In this embodiment, the semiconductor element 23 is mounted face down on the land structure 21 and the electrode pads of the semiconductor element 23 and the land structure 21 are electrically connected. Are those constituting a land grid array. Therefore,
This is a resin-sealed semiconductor device having a size substantially equal to the size (area) of the semiconductor element 23, and constitutes a chip size package. Further, unlike the conventional resin-encapsulated semiconductor device using a lead frame, the area of the land structure 21 may be about the same size as the electrode pad of the semiconductor element of about 100 [μm]. Height 14
Since it is about 0 [μm] to 180 [μm], a high-density electrode arrangement is possible, and a small and thin resin-sealed semiconductor device can be realized. Further, the structure of the present embodiment can cope with the increase in the number of pins and can realize a resin-encapsulated semiconductor device of high-density surface mounting type, and the thickness of the semiconductor device itself is 500 [1 mm] or less. μm] can be realized.

In the resin-encapsulated semiconductor device of the present embodiment, the area of the top surface of the land structure 21 on the side sealed by the sealing resin 24 is exposed and protruded from the sealing resin 24. The edge of the top surface of the land structure 21 on the sealed side is larger than the area of the bottom surface of the body 21 and has a curved surface, and the land structure 21 has a substantially inverted trapezoidal cross-sectional shape. Things. With this structure, the bite between the sealing resin 24 and the land structure 21 can be improved, the adhesion can be improved, and the reliability of connection when mounting the substrate can be obtained.

In this embodiment, the sealing structure of the semiconductor element with the sealing resin 24 is a full mold structure.
The structure may be such that the sealing resin is injected only into the gap between the semiconductor element 23 and the land structure 21 for sealing to expose the back surface of the semiconductor element 23. Also, the semiconductor element 23
Is connected to the land structure 21 via a conductive adhesive 22. A bump electrode such as an Au bump, preferably a two-step bump electrode, is formed on an electrode pad of the semiconductor element 23 in advance. A conductive adhesive may be attached to the protruding electrode and connected to the land structure 21. In this case, since the projecting electrode has a step structure, it has a function of holding the conductive adhesive, so that the conductive adhesive can be prevented from protruding between the electrode pads, and the reliability of connection can be obtained. .

Next, an embodiment of a method for manufacturing a resin-sealed semiconductor device according to the present invention will be described with reference to the drawings. FIGS. 11A to 11E are cross-sectional views for each step showing the method for manufacturing the resin-encapsulated semiconductor device of the present embodiment.

First, as shown in FIG. 11A, a frame main body 25 is disposed in the area of the frame main body 25, connected to the frame main body 25 by a thin portion 26, and protrudes from the frame main body 25. The thin land portion 26 is broken by the pressing force in the direction in which the land body 27 protrudes from the frame body 25, and the land body 27 is moved from the frame body 25. A terminal land frame having a configuration to be separated is prepared. In the present embodiment, a terminal land frame as shown in FIG. 1 is prepared.

Next, as shown in FIG. 11 (b), the semiconductor element 29 is placed on the land structure 27 of the terminal land frame via the conductive adhesive 28 on the side where the land structure 27 protrudes. The electrode pad surfaces are joined to face each other. This step is a step corresponding to a flip chip bonding step in an assembling step of the semiconductor device. The conductive adhesive 28 is applied to the terminal land frame, the semiconductor element 29 is mounted face down, and the semiconductor element 29 and the frame are connected by heat treatment. Is to be joined. Here, the terminal land frame is easily separated by the pressing force in the direction in which the land structure 27 protrudes, that is, the pressing force from the bottom surface side of the land structure 27. The structure does not separate according to the protruding direction, that is, the pressing force from the upper surface of the land structure 27, and is separated only into the pressing force from one direction. Thus, even if a downward pressing force acts, the land structure 27 does not separate, and flip chip bonding can be performed stably.

Next, as shown in FIG. 11C, a region of the semiconductor element 29 face-down bonded on the terminal land frame is sealed with a sealing resin 30. Usually, single-sided sealing is performed by transfer molding using upper and lower sealing dies. Here, only the surface of the terminal land frame on which the semiconductor element 29 is mounted is sealed with the sealing resin 30, and has a single-sided sealing structure. And since each land component 27 is provided so as to protrude,
Even if the sealing resin 30 has a single-sided sealing structure because it bites against the step structure, the adhesion between the terminal land frame and the sealing resin 30 can be obtained. Here, the sealing resin 30 may be injected into the gap between the semiconductor element 29 and the land structure 27 of the terminal land frame by using a nozzle, a syringe, or the like to partially fill and seal. In the sealing structure in this case, since the back surface of the semiconductor element 29 is exposed, a package structure excellent in heat dissipation can be obtained.

Next, as shown in FIG. 11D, in a state where the terminal land frame is fixed, for example, in a state where the end of the terminal land frame is fixed and the region sealed with the sealing resin 30 is free. A pressing force is applied to the bottom of the land structure 27 from below the terminal land frame. In this case, by fixing the end of the terminal land frame and pushing up from below by a push-up pin to apply a pressing force, the land structure 27 and the frame body 25 of the terminal land frame are separated. The very thin portion 26 connecting the land structure 27 and the frame body 25 is separated by being broken by the pressing force generated by pushing up. Also,
In the case of pushing up, only a part of the land components 27 located below the semiconductor element 29 near the center, for example, may be pushed up, the land components 27 in the peripheral portion may be pushed up, or all the land components may be pushed up. The body 27 may be pushed up. However, the push-up is performed within a range in which the land structure 27 does not peel off from the sealing resin 30 due to the partial push-up. Further, any structure can be used as long as the land structure 27 can be separated by means other than pushing up. For example, the land body 27 can be separated by applying a twist to the frame body 25, but this is performed in consideration of reliability.

As shown in FIG. 11 (e), an extremely thin portion connecting the land structure 27 and the frame main body is separated by being broken by a pushing force generated by pushing up, and is separated by a resin sealing mold. The semiconductor device 31 can be obtained. Here, the peeling of the sealing resin 30 from the frame main body may be caused by weak adhesion between the sealing resin and a region other than the portion where the land main body 27 of the frame main body is formed, and the land main body 27 may be separated. Thereby, the resin-sealed semiconductor device 31 can be taken out. The land structure 27 is formed in the sealing resin 30 without being peeled off because the concave and convex shape bites into the sealing resin 30. As shown in the figure, the resin-encapsulated semiconductor device 31 includes a land structure 27.
Are arranged on the bottom surface thereof, and the land structure 27 is provided so as to protrude from the bottom surface of the sealing resin 30 to form a stand-off when the substrate is mounted. Here, the amount of protrusion of the land member 27 of the resin-encapsulated semiconductor device 31 is the amount obtained by subtracting the amount by which the land member 27 protrudes from the thickness of the frame body. An off is formed. In the present embodiment, the land structure 27 is set to 140 [μm] to 180 [μm] for a frame body having a thickness of 200 [μm].
[Μm] (70 [%] to 90 of the thickness of the frame body)
[%]), The stand-off height is 20 [μm] to 60 [μm] (10 [%] to 30 [%] of the thickness of the frame body), and the stand when mounted on the substrate A land electrode having an off state can be obtained.

As described above, by using the terminal land frame as shown in the present embodiment, the semiconductor element is flip-chip mounted and sealed with resin, and then the frame itself is removed by pushing up from below the land structure. Thus, the land electrodes electrically connected to the semiconductor elements can be arranged on the bottom surface of the resin-sealed semiconductor device. As a result, a surface-mount type semiconductor device is obtained, and the reliability of board mounting can be improved as compared with the conventional mounting by lead bonding. Further, in the resin-encapsulated semiconductor device, the amount of protrusion of each land structure from the sealing resin is obtained by subtracting the amount of each land structure itself protruding from the frame body from the thickness of the used terminal land frame body. When the product is separated from the frame main body, a stand-off for mounting on the substrate is formed, and there is no need to form a stand-off for the land in a separate step.

The resin-encapsulated semiconductor device of the present embodiment does not use a substrate provided with land electrodes unlike a BGA type semiconductor device. Is more advantageous than the conventional BGA type semiconductor device in terms of mass productivity and cost. Further, in the product processing step, as described above, if only the frame main body is separated, the completed body can be easily obtained. Therefore, the lead cutting step and the lead bending step which are necessary in the conventional separation from the frame. This eliminates damage to the product due to lead cutting and restrictions on cutting accuracy, and provides an epoch-making technology with increased cost capability by reducing the number of manufacturing steps. Furthermore, in the present embodiment, it has been described that the frame body is separated from the frame body by a pressing force such as pushing up on the land structure. However, without limiting to pushing up, the resin-encapsulated semiconductor device side is fixed and the frame body side is fixed. Also, by peeling off, the land component portion is cut from the frame main body at its thin portion, so that separation is possible, and the separating means is a thin portion connecting the land component and the frame main body. There are various means depending on the means for effectively cutting.

[0052]

As described above, with the terminal land frame of the present invention, a resin-encapsulated semiconductor device having land electrodes can be realized in place of the conventional beam-shaped lead electrodes. According to the present invention, the land electrode on the bottom surface of the resin-encapsulated semiconductor device can be used without using a substrate or the like.
A chip-size leadless package-type resin-encapsulated semiconductor device that can be formed from a frame state and can form land electrode standoffs in a self-aligned manner and has land electrodes by a non-conventional frame structure and method. Can be realized.

Further, in the method of manufacturing the resin-encapsulated semiconductor device, there is no need to restrict the line and space in designing the frame, design specifications, and the like as in the conventional case. Then, after the resin sealing, the frame main body can be easily separated by the push-up process, and the semiconductor device after the resin sealing can be obtained, thereby realizing low-cost manufacturing by reducing the number of steps. In addition, in the resin sealing step, since there is no resin leakage, no resin burr is generated on the land structure, and a post-process such as a resin burr removal step is unnecessary.

[Brief description of the drawings]

FIG. 1 is a plan view showing a terminal land frame according to an embodiment of the present invention.

FIG. 2 is a sectional view showing a terminal land frame according to an embodiment of the present invention.

FIG. 3 is a sectional view showing a terminal land frame according to an embodiment of the present invention.

FIG. 4 is a plan view showing a semiconductor device corresponding to the terminal land frame according to the embodiment of the present invention;

FIG. 5 is a plan view showing a semiconductor device corresponding to the terminal land frame according to the embodiment of the present invention;

FIG. 6 is a plan view showing a terminal land frame according to an embodiment of the present invention.

FIG. 7 is a sectional view showing a method for manufacturing a terminal land frame according to an embodiment of the present invention.

FIG. 8 is a sectional view showing a method for manufacturing a terminal land frame according to an embodiment of the present invention.

FIG. 9 is a sectional view showing a resin-sealed semiconductor device according to one embodiment of the present invention.

FIG. 10 is a bottom view showing a resin-sealed semiconductor device according to one embodiment of the present invention;

FIG. 11 is a sectional view showing the method of manufacturing the resin-encapsulated semiconductor device according to one embodiment of the present invention;

FIG. 12 is a plan view showing a conventional lead frame.

FIG. 13 is a sectional view showing a conventional resin-encapsulated semiconductor device.

FIG. 14 is a plan view showing a method for manufacturing a conventional resin-encapsulated semiconductor device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Frame frame 2 Die pad part 3 Suspended lead part 4 Inner lead part 5 Outer lead part 6 Tie bar part 7 Semiconductor element 8 Fine metal wire 9 Sealing resin 10 Frame body 11 Thin part 12 Land structure 12a Bottom part 12b Top part 13 Electrode pad 14, 15 Semiconductor element 16 Metal plate 17 Die part 18 Pressing die 19 Opening 20 Punch member 21 Land structure 22 Conductive adhesive 23 Semiconductor element 24 Sealing resin 25 Frame body 26 Thin part 27 Land structure 28 Conductivity Adhesive 29 Semiconductor element 30 Sealing resin 31 Resin-sealed semiconductor device

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[Procedure amendment]

[Submission date] September 1, 1999 (1999.9.1)

[Procedure amendment 1]

[Document name to be amended] Statement

[Correction target item name] Claims

[Correction method] Change

[Correction contents]

[Claims]

[Procedure amendment 2]

[Document name to be amended] Statement

[Correction target item name] 0013

[Correction method] Change

[Correction contents]

[0013]

In order to solve the above-mentioned conventional problems, a resin-encapsulated semiconductor device according to the present invention is provided with a frame main body made of a metal plate and a grid arranged in a region of the frame main body. Connected to the frame body by a thin portion, and formed to protrude from the frame body ,
Ri Na more and more of the land structure has a large area of the upper surface than the area of the bottom surface, the land structure has a frame present
Only by pressing force in the direction protruding from the body,
Part is broken and the land structure is
A resin-encapsulated semiconductor device formed by using a terminal land frame that is separated and forms an external electrode , wherein the semiconductor device has electrode pads connected to the land structure via a conductive adhesive. And a sealing resin that seals the outer periphery of the semiconductor element by projecting the bottom surface of the land structure, and the amount of protrusion of the land structure group from the sealing resin is equal to or less than the length of the frame body. The resin-encapsulated semiconductor device is an amount obtained by subtracting an amount by which the land component group protrudes from the frame main body from a thickness amount.

[Procedure amendment 3]

[Document name to be amended] Statement

[Correction target item name] 0014

[Correction method] Change

[Correction contents]

[0014] The present invention, or falling edge of di portion of the upper surface of the land configuration of the sealed in the sealing resin side is to have a resin-sealed semiconductor device has a curved surface.

[Procedure amendment 4]

[Document name to be amended] Statement

[Correction target item name] 0017

[Correction method] Change

[Correction contents]

According to the method of manufacturing a resin-encapsulated semiconductor device of the present invention, a frame main body made of a metal plate is disposed in a lattice shape in a region of the frame main body, and connected to the frame main body by a thin portion. And a plurality of land component groups formed so as to protrude from the frame main body and having an upper surface area larger than a bottom surface area thereof , wherein the land component groups protrude from the frame main body in a direction protruding from the frame main body. Tsu by the pressing force of the
Tenomi, wherein the step of thin thickness portion is prepared data <br/> over Terminal land frame the land structure group is broken constitutes the external electrodes is separated from the frame body, the land of the terminal land frame A step of flip-chip connecting the semiconductor element to the projecting side of the structure via a conductive adhesive, and sealing only the upper surface side of the terminal land frame around the semiconductor element with a sealing resin. Forming a resin-encapsulated semiconductor device, and applying a pressing force from the bottom side of the frame body to the bottom side of the land structure in a state in which the frame body of the terminal land frame is fixed; A step of breaking a thin portion connecting a structure and the frame body to separate the resin-sealed semiconductor device from the frame body
And

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01L 23/12 H01L 23/28 A 23/28 B29C 45/14 // B29C 45/14 H01L 23/12 L B29L 31:34 P (72) Inventor Masanori Minao 1-1, Yukicho, Takatsuki-shi, Osaka Matsushita Electronics Co., Ltd. F-term (reference) 4E048 AB01 EA04 4F206 AH37 JA02 JB17 JF05 4M109 AA01 AA02 BA02 CA04 CA21 DA01 DA04 DB15 DB16 DB17 FA01 FA04 5F044 LL07 LL11 QQ01 RR18 5F067 AA01 AA10 AB04 AB07 BA00 BA03 BA08 BE10 DA11 DE01 DF20

Claims (5)

[Claims] 1. A frame main body made of a metal plate, and a plurality of frames arranged in a lattice shape in a region of the frame main body, connected to the frame main body by a thin portion, and formed to protrude from the frame main body. A resin-encapsulated semiconductor device formed by using a terminal land frame comprising a land structure, wherein a semiconductor element whose electrode pad is connected to the land structure via a conductive adhesive is provided. A sealing resin in which the bottom surface of the land structure is protruded to seal the outer periphery of the semiconductor element. The amount of protrusion of the land structure group from the sealing resin is the thickness of the frame body. A resin-sealed semiconductor device characterized in that the amount is a value obtained by subtracting an amount by which the land component group protrudes from the frame body. 2. The area of the upper surface of the land structure on the side sealed with the sealing resin is larger than the area of the bottom surface of the land structure on the side exposed from the sealing resin. The resin-encapsulated semiconductor device according to claim 1, wherein an edge portion on an upper surface of the land structure has a curved surface. 3. The semiconductor device according to claim 1, wherein the semiconductor element has a protruding electrode on its electrode pad, and each of the protruding electrodes is connected to the land structure via a conductive adhesive. Resin-sealed semiconductor device. 4. The land structure sealed on the side of the sealing resin has a mushroom-like shape with a flat top surface to obtain an anchor effect with the sealing resin. The resin-sealed semiconductor device according to claim 1. 5. A frame body made of a metal plate, and a plurality of frames arranged in a lattice shape in a region of the frame body, connected to the frame body by a thin portion, and formed to protrude from the frame body. The land component group is configured such that the thin portion is broken and the land component group is separated from the frame body by a pressing force in a direction protruding from the frame body. A step of preparing a terminal land frame, a step of flip-chip connecting a semiconductor element to a protruding side of the land structure of the terminal land frame via a conductive adhesive, and ,
Sealing only the upper surface side of the terminal land frame with a sealing resin to form a resin-encapsulated semiconductor device, and fixing the frame body of the terminal land frame from the bottom surface side of the frame body with the frame body fixed. Applying a pressing force to the bottom surface side of the land structure, breaking a thin portion connecting the land structure and the frame body, and separating the resin-encapsulated semiconductor device from the frame body. Manufacturing method of a resin-sealed semiconductor device.