JP2000114823A5 - - Google Patents
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- Publication number
- JP2000114823A5 JP2000114823A5 JP1998286892A JP28689298A JP2000114823A5 JP 2000114823 A5 JP2000114823 A5 JP 2000114823A5 JP 1998286892 A JP1998286892 A JP 1998286892A JP 28689298 A JP28689298 A JP 28689298A JP 2000114823 A5 JP2000114823 A5 JP 2000114823A5
- Authority
- JP
- Japan
- Prior art keywords
- line
- ground electrode
- signal line
- substrate
- insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 description 3
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
Description
【0012】
線路基板10は図2の(a)、(b)に示すように、半絶縁性又は絶縁性(例えば、比抵抗が106Ωcm程度以上で、熱伝導率が140W/mK程度以上のAlN、SiC、ダイアモンド等)の平板基板11の表面に、信号線路12、その信号線路12に直流バイアスを印加するチョーク部13、その信号線路12の両端に接続した2つの信号電極14、2つの信号電極14をそれぞれ挟むように配置した二対の表面接地電極15が形成され、裏面には接地電極16が形成され、表面接地電極15は接地電極16に対してヴィアホール17により接続されている。この線路基板10は、その信号線路12の裏面には接地電極がなく、サスペンディド線路を形成している。[0012]
As shown in FIGS. 2A and 2B, the line substrate 10 is semi-insulating or insulating (for example, AlN having a specific resistance of about 10 6 Ωcm or more and a thermal conductivity of about 140 W / mK or more, A signal line 12, a choke 13 for applying a DC bias to the signal line 12, two signal electrodes 14 connected to both ends of the signal line 12, and two signals on the surface of a flat substrate 11 made of SiC , diamond, or the like. Two pairs of front ground electrodes 15 are formed so as to sandwich the electrode 14, respectively, and a ground electrode 16 is formed on the back surface. The front ground electrode 15 is connected to the ground electrode 16 via holes 17. The line substrate 10 has no ground electrode on the back surface of the signal line 12 and forms a suspended line.
Priority Applications (15)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP28689298A JP3869131B2 (en) | 1998-10-08 | 1998-10-08 | NRD guide gun oscillator |
US09/299,017 US6344658B1 (en) | 1998-04-28 | 1999-04-26 | Gunn diode, NRD guide gunn oscillator, fabricating method of gunn diode and structure for assembly of the same |
DE69934933T DE69934933T2 (en) | 1998-04-28 | 1999-04-27 | Gunndiode, NRD line circuit and method of manufacture |
EP03025203.5A EP1388901B1 (en) | 1998-04-28 | 1999-04-27 | Structure for assembly of a Gunn diode |
EP03025205.0A EP1388902B1 (en) | 1998-04-28 | 1999-04-27 | Fabricating method of Gunn diode |
EP03025204.3A EP1388931B1 (en) | 1998-04-28 | 1999-04-27 | NRD guide Gunn oscillator |
EP99108231A EP0954039B1 (en) | 1998-04-28 | 1999-04-27 | Gunn diode, NRD guide gunn oscillator and fabricating method |
KR10-1999-0014953A KR100523131B1 (en) | 1998-04-28 | 1999-04-27 | Gunn diode, NRD guide gunn oscillator and method for processing the same and mounting configuration |
CNB2004100016222A CN1278398C (en) | 1998-04-28 | 1999-04-28 | Gunn diode fabricating method and gunn oscillator |
CNB991053869A CN100364111C (en) | 1998-04-28 | 1999-04-28 | Gunn diode, non-radiation medium wave guide gunn oscillator and its producing method and mounting structure thereof |
US09/540,041 US6426511B1 (en) | 1998-04-28 | 2000-03-31 | Gunn diode, NRD guide gunn oscillator, fabricating method of gunn diode and structure for assembly of the same |
US09/541,097 US6514832B1 (en) | 1998-04-28 | 2000-03-31 | Gunn diode, NRD guide Gunn oscillator, fabricating method of Gunn diode and structure for assembly of the same |
US09/540,040 US6369663B1 (en) | 1998-04-28 | 2000-03-31 | NRD guide Gunn oscillator |
KR10-2005-0045357A KR100503694B1 (en) | 1998-04-28 | 2005-05-30 | Gunn diode, NRD guide gunn oscillator and method for processing the same and mounting configuration |
KR1020050045356A KR20050061415A (en) | 1998-04-28 | 2005-05-30 | Gunn diode, nrd guide gunn oscillator and method for processing the same and mounting configuration |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP28689298A JP3869131B2 (en) | 1998-10-08 | 1998-10-08 | NRD guide gun oscillator |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2000114823A JP2000114823A (en) | 2000-04-21 |
JP2000114823A5 true JP2000114823A5 (en) | 2004-09-09 |
JP3869131B2 JP3869131B2 (en) | 2007-01-17 |
Family
ID=17710357
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP28689298A Expired - Lifetime JP3869131B2 (en) | 1998-04-28 | 1998-10-08 | NRD guide gun oscillator |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3869131B2 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4493773B2 (en) * | 1999-12-27 | 2010-06-30 | 新日本無線株式会社 | Gunn diode and manufacturing method thereof |
JP4493772B2 (en) * | 1999-12-27 | 2010-06-30 | 新日本無線株式会社 | Indium phosphorus gun diode and manufacturing method thereof |
KR100358982B1 (en) * | 2001-02-20 | 2002-11-01 | 엔알디테크 주식회사 | FM Modulator for NRD Guide Circuit |
KR100358979B1 (en) * | 2001-02-20 | 2002-11-01 | 엔알디테크 주식회사 | Coupling Structure for SMA Connector -NRD Guide |
-
1998
- 1998-10-08 JP JP28689298A patent/JP3869131B2/en not_active Expired - Lifetime
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