JP2000114534A5 - - Google Patents
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- JP2000114534A5 JP2000114534A5 JP1998281244A JP28124498A JP2000114534A5 JP 2000114534 A5 JP2000114534 A5 JP 2000114534A5 JP 1998281244 A JP1998281244 A JP 1998281244A JP 28124498 A JP28124498 A JP 28124498A JP 2000114534 A5 JP2000114534 A5 JP 2000114534A5
- Authority
- JP
- Japan
- Prior art keywords
- conductive layer
- photoelectric conversion
- conversion device
- gate
- different
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 238000006243 chemical reaction Methods 0.000 description 8
- 239000010408 film Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 1
Description
【特許請求の範囲】
【請求項１】
光電変換素子とスイッチ薄膜トランジスタとをそれぞれ含む複数の画素が基板の上に複数配列されている光電変換装置であって、
前記スイッチ薄膜トランジスタは、
第１の導電層に含まれており前記基板の上に配されているゲート電極と、
前記ゲート電極の上に配されているゲート絶縁膜と、
を備え、
前記ゲート電極には、前記第１の導電層とは異なる第２の導電層に含まれており前記ゲート絶縁膜より上に配されているゲート線が、前記ゲート絶縁膜に形成されたコンタクトホールを通して接続されている
ことを特徴とする光電変換装置。
【請求項２】
前記第１の導電層と前記第２の導電層とは、互いに異なる材料で構成されている
ことを特徴とする請求項１に記載の光電変換装置。
【請求項３】
前記第１の導電層は、前記第２の導電層より薄い
ことを特徴とする請求項１又は２に記載の光電変換装置。
【請求項４】
前記ゲート電極と前記ゲート線とは、前記コンタクトホールに配されたコンタクトプラグを介して接続されている
ことを特徴とする請求項１から３のいずれか１項に記載の光電変換装置。
【請求項５】
前記光電変換素子には、前記第２の導電層とは異なる第３の導電層に含まれており且つ前記ゲート線を横切るように延びた駆動線が接続されており、
前記スイッチ薄膜トランジスタのソース電極又はドレイン電極には、前記第２の導電層とは異なる第４の導電層に含まれており且つ前記ゲート線を横切るように延びた信号線が接続されている
ことを特徴とする請求項１から４のいずれか１項に記載の光電変換装置。
[Claims]
[Claim 1]
The photoelectric conversion device, each including a plurality of pixels and photoelectric conversion element and a switch TFT are arrayed on a substrate,
The switch thin film transistor,
A gate electrode contained in the first conductive layer and arranged on the substrate, and
The gate insulating film arranged on the gate electrode and
With
Wherein the gate electrode, the first gate line is arranged above the gate insulating film included in different second conductive layer is a conductive layer, a contact hole formed in the gate insulating film A photoelectric conversion device characterized by being connected through.
2.
Wherein the first conductive layer and the second conductive layer, a photoelectric conversion device according to claim 1, characterized in <br/> be composed of different materials.
3.
Wherein the first conductive layer, a photoelectric conversion device according to 請Motomeko 1 or 2, characterized in that thinner than the second conductive layer.
4.
Wherein the gate electrode and the gate line, the photoelectric conversion device according to any one of 3 from 請Motomeko 1, characterized in that it is connected via a contact plug arranged in the contact hole.
5.
Wherein the photoelectric conversion element is connected to extension Vita drive line so as to cross the different third and the gate lines included in the conductive layer electrically from said second conductive layer,
Wherein the source electrode and the drain electrode of the switch thin film transistor, the fourth included in the conductive layer and the signal line extending across said gate lines are connected different from the previous SL second conductive layer < br /> that the photoelectric conversion device according to 請Motomeko 1 in any one of 4, wherein.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10281244A JP2000114534A (en) | 1998-10-02 | 1998-10-02 | Photoelectric conversion device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10281244A JP2000114534A (en) | 1998-10-02 | 1998-10-02 | Photoelectric conversion device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000114534A JP2000114534A (en) | 2000-04-21 |
| JP2000114534A5 true JP2000114534A5 (en) | 2009-09-03 |
Family
ID=17636377
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10281244A Pending JP2000114534A (en) | 1998-10-02 | 1998-10-02 | Photoelectric conversion device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000114534A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4710224B2 (en) * | 2003-12-24 | 2011-06-29 | ソニー株式会社 | Field effect transistor and manufacturing method thereof |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02157729A (en) * | 1988-12-09 | 1990-06-18 | Matsushita Electric Ind Co Ltd | Substrate for thin-film transistor array |
| JPH0572561A (en) * | 1991-09-17 | 1993-03-26 | Sharp Corp | Active matrix substrate |
| JPH06151800A (en) * | 1992-06-10 | 1994-05-31 | Nec Corp | Contact type image sensor |
| US5814530A (en) * | 1996-09-27 | 1998-09-29 | Xerox Corporation | Producing a sensor with doped microcrystalline silicon channel leads |
| JP3581502B2 (en) * | 1996-11-07 | 2004-10-27 | キヤノン株式会社 | Method for manufacturing photodetector |
-
1998
- 1998-10-02 JP JP10281244A patent/JP2000114534A/en active Pending
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