JP2000113805A5 - - Google Patents

Claims (11)

In an electron beam apparatus comprising an electron source, a plate facing the electron source, and a spacer disposed between the electron source and the plate,
The spacer includes a spacer substrate and a film covering at least a part of the spacer substrate,
The thermal expansion coefficient of at least one of the electron source or the plate has a value between 80 × 10 ⁻⁷ / ° C. and 90 × 10 ⁻⁷ / ° C., and the spacer substrate is made of a mixed fired product of alumina and zirconia. a ceramic, an electron beam apparatus according to claim and Turkey from 75 × 10 ^-7 / ℃ having a thermal expansion coefficient of 95 × 10 ^-7 / ℃. 2. The electron beam apparatus according to claim 1 , wherein a weight mixing ratio of the alumina and the zirconia is between 70:30 and 10:90. 3. The electron beam apparatus according to claim 1, wherein the content of alkali metal in the spacer substrate is 0.1% or less. Keep electron beam apparatus according to any one of claims 1 to 3, an electron beam apparatus in which the film than the temperature at the time of the spacer assembly, is characterized in that substantially formed by previously treated with the same or higher temperature . The electron beam apparatus according to any one of claims 1 to 4, wherein the spacer has a first intermediate electrode layer, the intermediate electrode layer of the first is connected to the film and electrically, and the An electron beam apparatus, wherein the electron beam apparatus is electrically connected to a wiring portion disposed in an electron source. The electron beam apparatus according to any one of claims 1 to 5, wherein the spacer has a second intermediate electrode layer, the intermediate electrode layer of the second is connected to the film and electrically, and the An electron beam apparatus, wherein the electron beam apparatus is electrically connected to a wiring portion disposed on a plate. The electron beam apparatus according to any one of claims 1 to 6, the surface conduction type and a thin film in which the electron emission device includes an electron emission portion spanning between a pair of device electrodes and the pair of element electrodes facing An electron beam apparatus characterized by being an electron-emitting device. 8. The electron beam apparatus according to claim 7 , wherein the thin film is a film made of conductive fine particles. The electron beam apparatus according to any one of claims 1 to 8, a plurality of row wirings and column wirings for supplying a current to the electron-emitting devices on the electron source is arranged via an insulating layer The plurality of electron-emitting devices are arranged in a matrix on the electron source, and each of the plurality of electron-emitting devices is connected to each of the row-direction wirings and each of the column-direction wirings. A featured electron beam apparatus. The electron beam apparatus according to any one of claims 1 to 8, wherein the plurality of row wirings are arranged on the electron source, the plurality of electron-emitting devices arranged in a matrix on the electron source Each of the plurality of electron-emitting devices is connected to a pair of row-direction wirings among the plurality of row-direction wirings. The electron beam apparatus according to any one of claims 1 to 10, characterized in that the image forming member on which an image is formed by the collision of an electron beam accelerated by an acceleration voltage is arranged on the plate Image forming apparatus.