JP2000106445A - Package for optical semiconductor element housing - Google Patents

Package for optical semiconductor element housing

Info

Publication number
JP2000106445A
JP2000106445A JP10274040A JP27404098A JP2000106445A JP 2000106445 A JP2000106445 A JP 2000106445A JP 10274040 A JP10274040 A JP 10274040A JP 27404098 A JP27404098 A JP 27404098A JP 2000106445 A JP2000106445 A JP 2000106445A
Authority
JP
Japan
Prior art keywords
optical semiconductor
semiconductor element
fixing member
light
frame
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10274040A
Other languages
Japanese (ja)
Inventor
Mitsuo Yanagisawa
美津夫 柳沢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP10274040A priority Critical patent/JP2000106445A/en
Priority to US09/405,961 priority patent/US6426591B1/en
Priority to FR9912056A priority patent/FR2788376B1/en
Publication of JP2000106445A publication Critical patent/JP2000106445A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16195Flat cap [not enclosing an internal cavity]

Landscapes

  • Led Device Packages (AREA)
  • Light Receiving Elements (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a package for housing an optical semiconductor element which makes an optical fiber transfer the stimulated light of an optical semiconductor element via a light-transmitting member and enhances the transmission efficiency of the light signal. SOLUTION: A package for an optical semiconductor element consists of a base body 1 having a mount part 1a with an optical semiconductor element 4 placed on the upper surface thereof, a frame body 2, which is attached on the base body 1 so as to encircle the optical semiconductor element mount part 1a, has a through hole 2a formed in the side part thereof and consists of an iron, nickel and cobalt-alloy, a cylindrical fixed member 9, which is attached to the periphery of the hole 2a formed in the side part of the frame body 2 and has a space, through which a light signal is transmitted, in the interior thereof, a light-transmitting member 10, which is attached to the member 9, blocks the interior of the member 9 and consists of an amorphous glass, and a cover member 3, which is attached on the upper surface of the frame body 2 and seals hermetically the element 4, and the member 9 consists of an alloy of 40 to 60 wt.% of iron with 40 to 60 wt.% of nickel and is welded to the outer surface of the periphery of the hole 2a formed in the side part of the frame body 1 by a local heating method.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は光半導体素子を収容
するための光半導体素子収納用パッケージに関するもの
である。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical semiconductor element housing package for housing an optical semiconductor element.

【0002】[0002]

【従来の技術】従来、光半導体素子を収容するための光
半導体素子収納用パッケージは、一般に鉄ーニッケルー
コバルト合金や銅−タングステン合金等の金属から成
り、上面中央部に光半導体素子が載置される載置部を有
し、該載置部周辺に複数の外部リード端子が絶縁部材を
介し上面から下面に貫通するようにして固定された金属
基体と、前記光半導体素子搭載部を囲繞するようにして
金属基体上に銀ロウ等のロウ材を介して接合され、側部
に貫通孔を有する鉄ーニッケルーコバルト合金等から成
る枠体と、前記枠体の貫通孔周辺に金ー錫合金等のロウ
材を介して取着され、内部に光信号が伝達される空間を
有する鉄ーニッケルーコバルト合金等の金属から成る筒
状の固定部材と、前記筒状の固定部材に融点が300〜
400℃の金ー錫合金等の低融点ロウ材を介して取着さ
れた固定部材の内部を塞ぐ非晶質ガラス等から成る透光
性部材と、前記枠体の上面に取着され、光半導体素子を
気密に封止する蓋部材とから構成されており、前記金属
基体の光半導体素子搭載部に光半導体素子を接着固定す
るとともに該光半導体素子の各電極をボンディングワイ
ヤを介して外部リード端子に電気的に接続し、しかる
後、前記枠体の上面に蓋部材を接合させ、金属基体と枠
体と蓋部材とから成る容器内部に光半導体素子を気密に
収容するとともに筒状固定部材に光ファイバーを接続さ
せることによって製品としての光半導体装置となる。
2. Description of the Related Art Conventionally, an optical semiconductor device housing package for housing an optical semiconductor device is generally made of a metal such as an iron-nickel-cobalt alloy or a copper-tungsten alloy. A metal base having a mounting portion to be mounted, a plurality of external lead terminals fixed around the mounting portion so as to penetrate from an upper surface to a lower surface via an insulating member, and a metal substrate surrounding the optical semiconductor element mounting portion. A frame body made of an iron-nickel-cobalt alloy or the like having a through-hole on the side and joined to the metal base via a brazing material such as silver brazing; A cylindrical fixing member made of a metal such as an iron-nickel-cobalt alloy having a space for transmitting an optical signal therein, which is attached through a brazing material such as a tin alloy, and a melting point formed on the cylindrical fixing member. Is 300 ~
A light-transmitting member made of amorphous glass or the like that blocks the inside of the fixed member attached via a low-melting-point brazing material such as a gold-tin alloy at 400 ° C .; And a lid member for hermetically sealing the semiconductor element. The optical semiconductor element is bonded and fixed to the optical semiconductor element mounting portion of the metal base, and each electrode of the optical semiconductor element is connected to an external lead via a bonding wire. The optical semiconductor element is electrically connected to a terminal, and thereafter, a lid member is joined to the upper surface of the frame body, and the optical semiconductor element is hermetically housed in a container including the metal base, the frame body, and the lid member, and the cylindrical fixing member is provided. By connecting an optical fiber to the optical semiconductor device, an optical semiconductor device as a product is obtained.

【0003】かかる光半導体装置は外部電気回路から供
給される駆動信号によって光半導体素子を光励起させ、
該励起した光を透光性部材を通して光ファイバーに授受
させるとともに該光ファイバー内を伝達させることによ
って高速光通信等に使用される光半導体装置として機能
する。
Such an optical semiconductor device optically excites an optical semiconductor element by a drive signal supplied from an external electric circuit,
By transmitting and receiving the excited light to and from the optical fiber through the light transmitting member, the device functions as an optical semiconductor device used for high-speed optical communication or the like by transmitting the light inside the optical fiber.

【0004】[0004]

【発明が解決しようとする課題】しかしながら、この従
来の光半導体素子収納用パッケージにおいては、透光性
部材を構成する非晶質ガラスの熱膨張係数が約8.5×
10-6/℃(30℃〜400℃)であるのに対し、筒状
の固定部材を構成する鉄ーニッケルーコバルト合金等の
熱膨張係数が約4.5×10-6/℃(Rt〜400℃)
であり、相違することから筒状の固定部材に透光性部材
を低融点ロウ材を介して取着させた場合、透光性部材と
固定部材との間に両者の熱膨張係数の相違に起因する熱
応力が発生するとともにこれが透光性部材に内在してし
まい、その結果、透光性部材を通して光半導体素子が励
起した光を光ファイバーに授受させる際、光半導体素子
の励起した光は透光性部材を通過する際に前記内在する
応力によって複屈折を起こし、光の一部のみが光ファイ
バーに授受されることになって光ファイバーヘの光の授
受の効率が悪くなるとともに光信号の伝送効率が悪化す
るという欠点を有していた。
However, in this conventional package for housing an optical semiconductor device, the thermal expansion coefficient of the amorphous glass constituting the translucent member is about 8.5 ×.
10 −6 / ° C. (30 ° C. to 400 ° C.), whereas the thermal expansion coefficient of the iron-nickel-cobalt alloy constituting the cylindrical fixing member is about 4.5 × 10 −6 / ° C. (Rt) Up to 400 ° C)
When the translucent member is attached to the cylindrical fixing member via the low melting point brazing material due to the difference, the difference in the thermal expansion coefficient between the translucent member and the fixing member may be caused. The resulting thermal stress is generated and is inherent in the light transmitting member. As a result, when the light excited by the optical semiconductor element is transmitted to and received from the optical fiber through the light transmitting member, the light excited by the optical semiconductor element is transmitted. When passing through the optical member, the intrinsic stress causes birefringence, and only a part of the light is transmitted to and received from the optical fiber, so that the efficiency of transmitting and receiving the light to and from the optical fiber is deteriorated, and the transmission efficiency of the optical signal is reduced. Had the drawback of becoming worse.

【0005】そこで上記欠点を解消するために非晶質ガ
ラスから成る透光性部材が取着される固定部材を透光性
部材の熱膨張係数に近似した熱膨張係数を有する40乃
至60重量%の鉄と40乃至60重量%のニッケルの合
金で形成することが考えられる。
In order to solve the above-mentioned drawbacks, a fixing member to which a light-transmitting member made of amorphous glass is attached is required to have a coefficient of thermal expansion close to that of the light-transmitting member of 40 to 60% by weight. Of iron and 40 to 60% by weight of nickel.

【0006】かかる固定部材を40乃至60重量%の鉄
と40乃至60重量%のニッケルの合金で形成した場
合、固定部材の熱膨張係数が約9.5×10-6/℃(R
t〜400℃)であり、非晶質ガラスから成る透光性部
材の熱膨張係数(約8.5×10-6/℃:30℃〜40
0℃)に近似することから透光性部材を固定部材に取着
する際、透光性部材と固定部材との間に両者の熱膨張係
数の相違に起因する熱応力が発生することは殆どなく、
透光性部材に応力が内在することも殆どない。
When such a fixing member is formed of an alloy of 40 to 60% by weight of iron and 40 to 60% by weight of nickel, the coefficient of thermal expansion of the fixing member is about 9.5 × 10 -6 / ° C. (R
t to 400 ° C.), and the coefficient of thermal expansion of the transparent member made of amorphous glass (about 8.5 × 10 −6 / ° C .: 30 ° C. to 40 ° C.).
0 ° C.), when attaching the translucent member to the fixing member, almost no thermal stress occurs between the translucent member and the fixing member due to the difference in the thermal expansion coefficient between the translucent member and the fixing member. Not
There is almost no stress in the translucent member.

【0007】しかしながら、この固定部材は透光性部材
を取着させる際に固定部材と透光性部材との間に応力を
発生することはないものの、枠体の貫通孔周辺の外表面
に金ー錫合金等のロウ材を介して取着する際、枠体が鉄
ーニッケルーコバルト合金等の金属材料から成り、その
熱膨張係数が約4.5×10-6/℃(Rt〜400℃)
で、40乃至60重量%の鉄と40乃至60重量%のニ
ッケルの合金から成る固定部材の熱膨張係数(約9.5
×10-6/℃:Rt〜400℃)と相違することから両
者間に両者の熱膨張係数の相違に起因する熱応力が発生
し、これが固定部材に取着されている透光性部材に作用
して透光性部材を通過する光半導体素子が励起した光に
複屈折を起こさせ、光ファイバーヘの光の授受の効率が
悪くなるとともに光信号の伝送効率が悪化するという欠
点を誘発した。
However, although this fixing member does not generate stress between the fixing member and the translucent member when the translucent member is attached, the outer surface around the through hole of the frame body has gold. When attaching via a brazing material such as a tin alloy, the frame is made of a metal material such as an iron-nickel-cobalt alloy and has a coefficient of thermal expansion of about 4.5 × 10 −6 / ° C. (Rt to 400 ℃)
The thermal expansion coefficient of a fixing member made of an alloy of 40 to 60% by weight of iron and 40 to 60% by weight of nickel (about 9.5)
(× 10 −6 / ° C .: Rt to 400 ° C.), a thermal stress is generated between the two due to the difference in the coefficient of thermal expansion between the two, and this is generated in the translucent member attached to the fixing member. This causes birefringence in the light excited by the optical semiconductor element passing through the light-transmissive member, thereby inducing a defect that the efficiency of transmitting and receiving the light to and from the optical fiber is deteriorated and the transmission efficiency of the optical signal is deteriorated.

【0008】本発明は上記諸欠点に鑑み案出されたもの
で、その目的は光半導体素子の励起した光を透光性部材
を介し光ファイバーに効率良く授受させ、光信号の伝送
効率を高いものとした光半導体素子収納用パッケージを
提供することにある。
The present invention has been devised in view of the above-mentioned drawbacks, and has as its object to efficiently transmit and receive light excited by an optical semiconductor element to and from an optical fiber via a translucent member, thereby increasing the transmission efficiency of optical signals. An object of the present invention is to provide an optical semiconductor element storage package.

【0009】[0009]

【課題を解決するための手段】本発明は、上面に光半導
体素子が載置される載置部を有する基体と、前記基体上
に光半導体素子載置部を囲繞するように取着され、側部
に貫通孔を有する鉄ーニッケルーコバルト合金から成る
枠体と、前記枠体の貫通孔周辺に取着され、内部に光信
号が伝達される空間を有する筒状の固定部材と、前記筒
状の固定部材に取着され、固定部材の内部を塞ぐ非晶質
ガラスから成る透光性部材と、前記枠体の上面に取着さ
れ、光半導体素子を気密に封止する蓋部材とから成る光
半導体素子収納用パッケージであって、前記固定部材は
40乃至60重量%の鉄と40乃至60重量%のニッケ
ルの合金から成り、枠体の貫通孔周辺の外表面に局部加
熱法により溶接されていることを特徴とするものであ
る。
According to the present invention, there is provided a base having a mounting portion on which an optical semiconductor element is mounted on an upper surface, and mounted on the base so as to surround the optical semiconductor device mounting portion, A frame made of an iron-nickel-cobalt alloy having a through hole in a side portion, a cylindrical fixing member attached around the through hole of the frame, and having a space in which an optical signal is transmitted, A translucent member made of amorphous glass that is attached to the cylindrical fixing member and seals the inside of the fixing member, and a lid member that is attached to the upper surface of the frame and hermetically seals the optical semiconductor element. Wherein the fixing member is made of an alloy of 40 to 60% by weight of iron and 40 to 60% by weight of nickel, and is formed on the outer surface around the through hole of the frame by a local heating method. It is characterized by being welded.

【0010】本発明の光半導体素子収納用パッケージに
よれば、固定部材を40乃至60重量%の鉄と40乃至
60重量%のニッケルの合金で形成したことから固定部
材の熱膨張係数が約9.5×10-6/℃(Rt〜400
℃)となって透光性部材の熱膨張係数に近似した値とな
り、その結果、透光性部材と固定部材とを取着させる
際、透光性部材と固定部材との間に両者の熱膨張係数の
相違に起因する熱応力が発生することは殆どなく、透光
性部材に熱応力が内在することも殆どない。従って、光
半導体素子が励起した光を透光性部材を通して光ファイ
バーに伝達させた場合、光半導体素子の励起した光は透
光性部材に内在する熱応力に起因して複屈折を起こすこ
とはなくそのまま光ファイバー部材に授受されることと
なり、光信号の伝送効率が極めて高いものとなる。
According to the package for housing an optical semiconductor element of the present invention, since the fixing member is made of an alloy of 40 to 60% by weight of iron and 40 to 60% by weight of nickel, the coefficient of thermal expansion of the fixing member is about 9%. 0.5 × 10 −6 / ° C. (Rt to 400
° C), which is a value approximating the coefficient of thermal expansion of the translucent member. As a result, when the translucent member and the fixing member are attached to each other, the heat transfer between the translucent member and the fixing member is caused. Thermal stress due to the difference in expansion coefficient is hardly generated, and thermal stress is hardly present in the translucent member. Therefore, when the light excited by the optical semiconductor element is transmitted to the optical fiber through the light transmitting member, the light excited by the optical semiconductor element does not cause birefringence due to the thermal stress inherent in the light transmitting member. It is transmitted and received as it is to the optical fiber member, and the transmission efficiency of the optical signal becomes extremely high.

【0011】また前記固定部材は枠体にレーザー光線照
射等による局部加熱法により溶接し取着することから固
定部材と枠体の熱膨張係数が相違するとしても取着時の
加熱領域が狭いために両者間に発生する熱応力は極めて
小さなものとなり、その結果、固定部材と枠体の熱膨張
係数の相違に起因する熱応力が透光性部材に大きく作用
することはなく、透光性部材を通過する光に複屈折を招
来させることが有効に防止され、光ファイバーに光半導
体素子が励起した光を効率良く授受させて、光信号の伝
送効率を良好となすことができる。
Further, since the fixing member is welded and attached to the frame by a local heating method such as irradiation of a laser beam or the like, even if the fixing member and the frame have different coefficients of thermal expansion, the heating area at the time of attachment is small. The thermal stress generated between the two becomes extremely small, and as a result, the thermal stress caused by the difference in the thermal expansion coefficient between the fixing member and the frame does not greatly affect the translucent member. Birefringence of the passing light is effectively prevented, and the light excited by the optical semiconductor element is efficiently transmitted to and received from the optical fiber, so that the transmission efficiency of the optical signal can be improved.

【0012】[0012]

【発明の実施の形態】次に、本発明を添付図面に基づき
詳細に説明する。図1及び図2は本発明の光半導体素子
収納用パッケージの一実施例を示し、1は基体、2は枠
体、3は蓋部材である。この基体1と枠体2と蓋部材3
とで内部に光半導体素子4を収容するための容器が構成
される。
Next, the present invention will be described in detail with reference to the accompanying drawings. 1 and 2 show an embodiment of the package for housing an optical semiconductor element of the present invention, wherein 1 is a base, 2 is a frame, and 3 is a lid member. The base 1, the frame 2, and the cover 3
A container for accommodating the optical semiconductor element 4 is formed therein.

【0013】前記基体1は光半導体素子4を支持するた
めの支持部材として作用し、その上面の略中央部に光半
導体素子4を載置するための載置部1aを有し、該載置
部1aに光半導体素子4が間にペルチェ素子5等を挟ん
で金−シリコンロウ材等の接着剤により接着固定され
る。
The base 1 functions as a support member for supporting the optical semiconductor element 4, and has a mounting section 1a for mounting the optical semiconductor element 4 at a substantially central portion of the upper surface thereof. The optical semiconductor element 4 is bonded and fixed to the portion 1a with an adhesive such as a gold-silicon brazing material with the Peltier element 5 and the like interposed therebetween.

【0014】前記基体1は鉄ーニッケルーコバルト合金
や銅−タングステン合金等の金属材料から成り、例え
ば、鉄ーニッケルーコバルト合金から成る場合、鉄ーニ
ッケルーコバルト合金のインゴット(塊)に圧延加工法
や打ち抜き加工法等、従来周知の金属加工法を施すこと
によって製作される。
The base 1 is made of a metal material such as an iron-nickel-cobalt alloy or a copper-tungsten alloy. It is manufactured by applying a conventionally known metal working method such as a working method or a punching working method.

【0015】なお、前記基体1はその外表面に耐蝕性に
優れ、かつロウ材に対して濡れ性が良い金属、具体的に
は厚さ2〜6μmのニッケル層と厚さ0.5〜5μmの
金層を順次、メッキ法により被着させておくと、基体1
が酸化腐蝕するのを有効に防止することができるととも
に基体1上面に光半導体素子4の下部に配されるペルチ
ェ素子5等を強固に接着固定させることができる。従っ
て、前記基体1は酸化腐蝕を有効に防止し、かつ上面に
光半導体素子4の下部に配されるペルチェ素子5等を強
固に接着固定させる場合にはその外表面に厚さ2〜6μ
mのニッケル層と厚さ0.5〜5μmの金層を順次、メ
ッキ法により被着させておくことが好ましい。
The substrate 1 has a metal having excellent corrosion resistance on its outer surface and good wettability to a brazing material, specifically a nickel layer having a thickness of 2 to 6 μm and a thickness of 0.5 to 5 μm. When the gold layers are sequentially applied by a plating method,
Can be effectively prevented from being oxidized and corroded, and the Peltier element 5 and the like disposed below the optical semiconductor element 4 can be firmly adhered and fixed on the upper surface of the base 1. Therefore, the base 1 effectively prevents oxidative corrosion and has a thickness of 2 to 6 μm on its outer surface when the Peltier element 5 or the like disposed below the optical semiconductor element 4 is firmly adhered and fixed on the upper surface.
It is preferable that a nickel layer having a thickness of m and a gold layer having a thickness of 0.5 to 5 μm are sequentially applied by plating.

【0016】また前記基体1は光半導体素子4が載置さ
れる載置部1aの周辺に該基体1を貫通する複数個の外
部リード端子6がガラス等の絶縁部材7を介して固定さ
れている。
The base 1 has a plurality of external lead terminals 6 penetrating the base 1 fixed around a mounting portion 1a on which the optical semiconductor element 4 is mounted via an insulating member 7 such as glass. I have.

【0017】前記外部リード端子6は光半導体素子4の
各電極を外部の竃気回路に電気的に接続する作用をな
し、その一端に光半導体素子4の電極がボンディングワ
イヤ8を介して接続され、また他端側は外部電気回路に
半田等のロウ材を介して接続される。
The external lead terminal 6 functions to electrically connect each electrode of the optical semiconductor element 4 to an external gas circuit. One end of the external lead terminal 6 is connected to the electrode of the optical semiconductor element 4 via a bonding wire 8. The other end is connected to an external electric circuit via a brazing material such as solder.

【0018】前記外部リード端子6は例えば、鉄ーニッ
ケルーコバルト合金や鉄ーニッケル合金等の金属材料か
ら成り、基体1への固定は、基体1に外部リード端子6
より若干大きな径の孔をあけておき、この孔にリング状
のガラスから成る絶縁部材7と外部リード端子6を挿通
させ、しかる後、前記ガラスから成る絶縁部材7を加熱
溶融させることによって行われる。
The external lead terminal 6 is made of, for example, a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy.
A hole having a slightly larger diameter is formed, and the insulating member 7 made of a ring-shaped glass and the external lead terminal 6 are inserted into the hole, and then the insulating member 7 made of the glass is heated and melted. .

【0019】なお、前記外部リード端子6はその表面に
ニッケルメッキ層、金メッキ層等の耐蝕性に優れ、かつ
ロウ材と濡れ性の良いメッキ金属層を1.0μm乃至2
0μmの厚みに被着させておくと外部リード端子6の酸
化腐蝕が有効に防止されるとともに外部リード端子6と
ボンディングワイヤ8との接続を強固なものとなすこと
ができる。従って、前記外部リード端子6はその表面に
ニッケルメッキ層、金メッキ層等の耐蝕性に優れ、かつ
ロウ材と濡れ性が良いメッキ金属層を1.0μm乃至2
0μmの厚みに被着させておくことが好ましい。
The external lead terminal 6 is provided with a plating metal layer having excellent corrosion resistance such as a nickel plating layer and a gold plating layer on its surface and having good wettability with a brazing material from 1.0 μm to 2 μm.
When the external lead terminal 6 is adhered to a thickness of 0 μm, oxidation corrosion of the external lead terminal 6 is effectively prevented, and the connection between the external lead terminal 6 and the bonding wire 8 can be made strong. Therefore, the external lead terminal 6 is provided with a plating metal layer having excellent corrosion resistance such as a nickel plating layer and a gold plating layer on its surface and having good wettability with the brazing material from 1.0 μm to 2 μm.
Preferably, it is applied to a thickness of 0 μm.

【0020】また前記基体1の上面には、光半導体素子
4が載置される載置部1aを囲繞するようにして枠体2
が接合されており、該枠体2の内側に光半導体素子4を
収容するための空所が形成されている。
On the upper surface of the base 1, a frame 2 is mounted so as to surround the mounting portion 1a on which the optical semiconductor element 4 is mounted.
Are formed, and a space for accommodating the optical semiconductor element 4 is formed inside the frame 2.

【0021】前記枠体2は鉄ーニッケルーコバルト合金
等の金属材料から成り、例えば、鉄ーニッケルーコバル
ト合金等のインゴット(塊)をプレス加工により枠状と
することによって形成され、基体1への取着は基体1上
面と枠体2の下面とを銀ロウ材を介しロウ付けすること
によって行われている。
The frame 2 is made of a metal material such as an iron-nickel-cobalt alloy. For example, the frame 2 is formed by pressing an ingot (a lump) such as an iron-nickel-cobalt alloy into a frame shape by pressing. Attachment is performed by brazing the upper surface of the base 1 and the lower surface of the frame 2 via a silver brazing material.

【0022】更に前記枠体2はその側部に貫通孔2aが
設けてあり、該貫通孔2a周辺の外表面には筒状の固定
部材9が取着され、更に固定部材9の内側には透光性部
材10が取着されている。
Further, the frame 2 is provided with a through hole 2a on a side portion thereof, and a cylindrical fixing member 9 is attached to an outer surface around the through hole 2a. A translucent member 10 is attached.

【0023】前記枠体2の側部に形成されている貫通孔
2aは内部に収容する光半導体素子4が励起した光を後
述する固定部材9に接続される光ファイバー部材11に
伝達させる伝達孔として作用し、枠体2の側部に従来周
知のドリル孔あけ加工を施すことによって所定形状に形
成される。
The through hole 2a formed on the side of the frame 2 serves as a transmission hole for transmitting light excited by the optical semiconductor element 4 housed therein to an optical fiber member 11 connected to a fixing member 9 described later. The frame 2 is formed into a predetermined shape by performing a well-known drilling process on a side portion of the frame 2.

【0024】前記枠体2の側部外表面で貫通孔2aの周
辺には筒状の固定部材9が取着されており、該固定部材
9は光ファイバー部材11を枠体2に固定する際の下地
固定部材として作用するとともに枠体2の貫通孔2a内
を伝達する光半導体素子4の励起した光を光ファイバー
部材11に伝達させる作用をなし、その一端は枠体2の
貫通孔2a周辺の外表面に金ー錫合金等のロウ材を介し
て取着され、また他端側には光ファイバー部材11が取
着接続される。
A cylindrical fixing member 9 is attached to the side outer surface of the frame 2 around the through hole 2a. The fixing member 9 is used to fix the optical fiber member 11 to the frame 2. It acts as a base fixing member and acts to transmit the excited light of the optical semiconductor element 4 transmitting through the through hole 2a of the frame 2 to the optical fiber member 11, one end of which is located outside the vicinity of the through hole 2a of the frame 2. An optical fiber member 11 is attached and connected to the surface via a brazing material such as a gold-tin alloy and the other end.

【0025】前記筒状の固定部材9は40乃至60重量
%の鉄と40乃至60重量%のニッケルの合金から成
り、例えば、鉄ーニッケル合金のインゴット(塊)をプ
レス加工により筒状とすることによって形成される。
The cylindrical fixing member 9 is made of an alloy of 40 to 60% by weight of iron and 40 to 60% by weight of nickel. For example, an iron-nickel alloy ingot is formed into a cylindrical shape by pressing. Formed by

【0026】また前記固定部材9はその内側に透光性部
材10が取着されており、該透光性部材10は固定部材
9の内側を塞ぎ、基体1と枠体2と蓋部材3とから成る
容器の気密封止を保持させるとともに固定部材9の内部
空間を伝達する光半導体素子4の励起した光をそのまま
固定部材9に取着接続される光ファイバー部材11に伝
達させる作用をなす。
The fixing member 9 has a light-transmitting member 10 attached to the inside thereof. The light-transmitting member 10 closes the inside of the fixing member 9, and the base 1, frame 2, cover 3 And a function of transmitting the excited light of the optical semiconductor element 4 transmitting the internal space of the fixing member 9 to the optical fiber member 11 attached to and connected to the fixing member 9 as it is.

【0027】前記透光性部材10は例えば、酸化珪素、
酸化鉛を主成分とした鉛系及びホウ酸、ケイ砂を主成分
とするホウケイ酸系の非晶質ガラスで形成されており、
該非晶質ガラスは結晶軸が存在しないことから光半導体
素子4の励起する光を透光性部材10を通過させて光フ
ァイバー部材11に授受させる場合、光半導体素子4の
励起した光は透光性部材10で複屈折を起こすことはな
くそのまま光フアイバー部材11に授受されることとな
り、その結果、光半導体素子4が励起した光の光ファイ
バー部材11への授受が高効率となって光信号の伝送効
率を高いものとなすことができる。
The light transmitting member 10 is made of, for example, silicon oxide,
It is made of lead-based and boric acid containing lead oxide as a main component, and borosilicate-based amorphous glass containing silica sand as a main component.
Since the amorphous glass has no crystal axis, the light excited by the optical semiconductor element 4 is transmitted and received by the optical fiber member 11 through the light-transmitting member 10. The birefringence does not occur in the member 10 and is transmitted / received to the optical fiber member 11 as it is. As a result, the transmission / reception of the light excited by the optical semiconductor element 4 to / from the optical fiber member 11 becomes highly efficient, and the transmission of the optical signal is performed. High efficiency can be achieved.

【0028】更に前記透光性部材10の固定部材9への
取着は例えば、透光性部材10の外周部に予めメタライ
ズ層12を被着させておき、該メタライズ層12と固定
部材9とを金ー錫合金等のロウ材を介しロウ付けするこ
とによって行われる。この場合、透光性部材10の固定
部材9への取着が金ー錫合金等によるロウ付けにより行
われることから取着の信頼性が高いものとなり、これに
よって固定部材9と透光性部材10との取着部における
光半導体素子4を収容する容器の気密封止が完全とな
り、容器内部に収容する光半導体素子4を長期間にわた
り正常、かつ安定に作動させることができる。また同時
に40乃至60重量%の鉄と40乃至60重量%のニッ
ケルの合金から成る固定部材9はその熱膨張係数が約
9.5×10-6/℃(Rt〜400℃)であり、非晶質
ガラスから成る透光性部材10の熱膨張係数に近似する
ことから透光性部材10を固定部材9にロウ付けする
際、透光性部材10と固定部材9との間に両者の熱膨張
係数の相違に起因する熱応力が発生することはなく、透
光性部材10に熱応力が内在することもない。従って、
光半導体素子4が励起した光を透光性部材10を通して
光ファイバー部材11に伝達させた場合、光半導体素子
4の励起した光は透光性部材10に内在する熱応力に起
因して複屈折を起こすことはなくそのまま光ファイバー
部材11に授受されることとなり、光信号の伝送効率が
極めて高いものとなる。
Further, the light-transmitting member 10 is attached to the fixing member 9 by, for example, previously attaching a metallization layer 12 to the outer periphery of the light-transmitting member 10, and connecting the metallization layer 12 to the fixing member 9. By brazing through a brazing material such as a gold-tin alloy. In this case, since the attachment of the translucent member 10 to the fixing member 9 is performed by brazing with a gold-tin alloy or the like, the attachment is highly reliable. The hermetic sealing of the container housing the optical semiconductor element 4 at the portion where the optical semiconductor element 4 is attached to the container 10 is completed, and the optical semiconductor element 4 housed inside the container can be normally and stably operated for a long period of time. At the same time, the fixing member 9 made of an alloy of 40 to 60% by weight of iron and 40 to 60% by weight of nickel has a thermal expansion coefficient of about 9.5 × 10 −6 / ° C. (Rt to 400 ° C.). When the translucent member 10 is brazed to the fixing member 9 because the thermal expansion coefficient of the translucent member 10 is approximately the same as the thermal expansion coefficient of the translucent member 10 made of crystalline glass, the heat transfer between the translucent member 10 and the fixing member 9 occurs. No thermal stress is generated due to the difference in the expansion coefficient, and no thermal stress is inherent in the translucent member 10. Therefore,
When the light excited by the optical semiconductor element 4 is transmitted to the optical fiber member 11 through the light transmitting member 10, the light excited by the optical semiconductor element 4 undergoes birefringence due to the thermal stress inherent in the light transmitting member 10. The signal is transmitted to and received from the optical fiber member 11 as it is without causing the transmission, and the transmission efficiency of the optical signal becomes extremely high.

【0029】なお、前記透光性部材10の外周部に予め
被着されているメタライズ層12は透光性部材10を構
成する非晶質ガラスの融点が約700℃と低く、従来周
知のMoーMn法を採用することによって形成すること
ができないことから図2に示すように、非晶質ガラスに
対して活性があり、強固に接合するチタン、チタンータ
ングステン、窒化タンタルの少なくとも1種から成る第
1層12aと、この第1層12aが透光性部材10を固
定部材9にロウ付けする際の熱によって後述する第3層
12cに拡散し、メタライズ層12の透光性部材10に
対する接合強度が低下するのを有効に防止する白金、ニ
ッケル、ニッケルークロムの少なくとも1種から成る第
2層12bと、メタライズ層12に対するロウ材の濡れ
性を改善し、メタライズ層12にロウ材を強固に接合さ
せて透光性部材10を固定部材9に強固に取着させる
金、白金、銅の少なくとも1種から成る第3層12cと
を順次、積層させることによって形成されており、特に
チタンー白金ー金を順次積層させて形成したメタライズ
層12は透光性部材10との接合強度が強く、かつロウ
材との濡れ性が良好で透光性部材10を固定部材9にロ
ウ付けすることが可能なことからメタライズ層12とし
て極めて好適である。
The metallized layer 12 previously applied to the outer peripheral portion of the light transmitting member 10 has a low melting point of about 700 ° C. of the amorphous glass constituting the light transmitting member 10, and the conventionally known Mo is used. As shown in FIG. 2, since it cannot be formed by employing the -Mn method, it is active against amorphous glass and is formed from at least one of titanium, titanium-tungsten, and tantalum nitride which are strongly bonded. The first layer 12a and the first layer 12a diffuse into a third layer 12c, which will be described later, due to heat generated when the translucent member 10 is brazed to the fixing member 9, and the metallized layer 12 is applied to the translucent member 10. A second layer (12b) made of at least one of platinum, nickel, and nickel-chromium, which effectively prevents a decrease in bonding strength; A third layer 12c made of at least one of gold, platinum, and copper, in which a brazing material is firmly bonded to the oil layer 12 and the translucent member 10 is firmly attached to the fixing member 9, is sequentially laminated. Particularly, the metallized layer 12 formed by sequentially laminating titanium-platinum-gold has a strong bonding strength with the light-transmitting member 10 and a good wettability with the brazing material, so that the light-transmitting member 10 is fixed. Since it can be brazed to the member 9, it is very suitable as the metallized layer 12.

【0030】また前記チタン、チタンータングステン、
窒化タンタルの少なくとも1種から成る第1層12a
と、白金、ニッケル、ニッケルークロムの少なくとも1
種から成る第2層12bと、金、白金、銅の少なくとも
1種から成る第3層12cとの3層構造を有するメタラ
イズ層12はその各々の金属材料、窒化物を透光性部材
10の外周部にスパッタリング法や蒸着法、イオンプレ
ーティング法、メッキ法等により順次、所定厚みに被着
させることによって形成される。
The titanium, titanium-tungsten,
First layer 12a made of at least one kind of tantalum nitride
And at least one of platinum, nickel and nickel-chromium
The metallized layer 12 having a three-layer structure of a second layer 12b made of a seed and a third layer 12c made of at least one of gold, platinum, and copper is made of a metal material and a nitride of the light-transmitting member 10. It is formed by sequentially applying a predetermined thickness to the outer peripheral portion by a sputtering method, a vapor deposition method, an ion plating method, a plating method, or the like.

【0031】更に前記メタライズ層12をチタン、チタ
ンータングステン、窒化タンタルの少なくとも1種から
成る第1層12aと、白金、ニッケル、ニッケルークロ
ムの少なくとも1種から成る第2層12bと、金、白
金、銅の少なくとも1種から成る第3層12cとで形成
する場合、第1層12aの層厚は500オングストロー
ム未満となるとメタライズ層12の透光性部材10に対
する接合強度が弱くなる傾向にあり、また2000オン
グストロームを超えると透光性部材10に第1層12a
を被着させる際に第1層12a中に大きな応力が内在
し、該内在応力によって第1層12aが透光性部材10
より剥離し易くな傾向にあることから第1層12aの厚
みは500オングストローム乃至2000オングストロ
ームの範囲としておくことが好ましく、第2層12bの
層厚は500オングストローム未満となると透光性部材
10を固定部材9にロウ付けする際の熱によって第1層
12aが第3層12cに拡散するのを有効に防止するこ
とができず、メタライズ層12の透光性部材10に対す
る接合強度が低下してしまう危険性があり、また100
00オングストロームを超えると第1層12a上に第2
層12bを被着させる際に第2層12b中に大きな応力
が内在し、該内在応力によって第2層12bが第1層1
2aより剥離し易くなる傾向にあることから第2層12
bの厚みは500オングストローム乃至10000オン
グストロームの範囲としておくことが好ましく、第3層
12cの層厚は0.5μm未満であるとメタライズ層1
2に対するロウ材の濡れ性が大きく改善されず、透光性
部材10を固定部材9に強固にロウ付け取着するのが困
難となる傾向にあり、また5μmを超えると第2層12
b上に第3層12cを被着させる際に第3層12c中に
大きな応力が内在し、該内在応力によって第3層12c
が第2層12bより剥離し易くなる傾向にあることから
第3層12cの厚みは0.5μm乃至5μmの範囲とし
ておくことが好ましい。
Further, the metallized layer 12 includes a first layer 12a made of at least one of titanium, titanium-tungsten, and tantalum nitride, a second layer 12b made of at least one of platinum, nickel, and nickel-chromium; When the third layer 12c made of at least one of platinum and copper is used, if the thickness of the first layer 12a is less than 500 angstroms, the bonding strength of the metallized layer 12 to the translucent member 10 tends to be weak. If the thickness exceeds 2000 angstroms, the first layer 12a
When the first layer 12a is adhered, a large stress is inherent in the first layer 12a, and the first layer 12a is
It is preferable that the thickness of the first layer 12a be in the range of 500 Å to 2000 Å because the layer tends to be more easily peeled off, and the light transmitting member 10 is fixed when the thickness of the second layer 12b is less than 500 Å. It is not possible to effectively prevent the first layer 12a from diffusing into the third layer 12c due to heat when brazing to the member 9, and the bonding strength of the metallized layer 12 to the translucent member 10 is reduced. Dangerous, 100
When the thickness exceeds 00 Å, the second layer is formed on the first layer 12a.
When depositing the layer 12b, a large stress is present in the second layer 12b, and the second layer 12b is caused by the first layer 1
The second layer 12 has a tendency to peel off more easily than the second layer 12a.
The thickness of b is preferably in the range of 500 Å to 10000 Å, and if the thickness of the third layer 12 c is less than 0.5 μm, the metallized layer 1
2 does not significantly improve the wettability of the brazing material, making it difficult to firmly braze and attach the translucent member 10 to the fixing member 9.
When the third layer 12c is deposited on the third layer 12b, a large stress is inherent in the third layer 12c, and the third layer 12c
It is preferable that the thickness of the third layer 12c be in the range of 0.5 μm to 5 μm since the second layer 12c tends to be more easily peeled off than the second layer 12b.

【0032】また更に前記透光性部材10が取着された
固定部材9の枠体2への取着はレーザー光線照射等によ
る局部加熱法による溶接によって行われており、例え
ば、枠体2の貫通孔2a周辺の外表面に透光性部材10
が取着された筒状の固定部材9を配置させ、次に前記筒
状の固定部材9にYAG及び炭酸ガス等の方法で出射さ
れたレーザー光線を1cm2 当たり104 〜107 Wと
いう極めて高いエネルギー密度のパワーで環状に照射さ
せ、固定部材9の一部と枠体2の一部を溶融一体化させ
ることによって行われる。この場合、固定部材9の枠体
2への取着が局部加熱法による溶接により行われ、加熱
領域が狭いことから固定部材9と枠体2の熱膨張係数が
相違するとしても両者間に大きな熱応力が発生し、これ
が透光性部材10に大きく作用することはなく、その結
果、透光性部材10を通過する光に複屈折を招来させる
ことが有効に防止され、光ファイバー部材11に光半導
体素子4が励起した光を効率良く授受させて、光信号の
伝送効率を良好となすことが可能となる。
Further, the fixing member 9 to which the translucent member 10 is attached is attached to the frame 2 by welding by a local heating method by irradiating a laser beam or the like. The translucent member 10 is provided on the outer surface around the hole 2a.
The laser beam emitted by a method such as YAG and carbon dioxide gas is applied to the cylindrical fixing member 9 at an extremely high level of 10 4 to 10 7 W / cm 2. This is performed by irradiating in a ring shape with the power of the energy density and melting and integrating a part of the fixing member 9 and a part of the frame 2. In this case, attachment of the fixing member 9 to the frame 2 is performed by welding by a local heating method, and since the heating area is small, even if the fixing member 9 and the frame 2 have different coefficients of thermal expansion, a large difference exists between them. Thermal stress is generated and does not greatly affect the translucent member 10. As a result, it is possible to effectively prevent light passing through the translucent member 10 from causing birefringence. The light excited by the semiconductor element 4 can be efficiently transmitted and received, and the transmission efficiency of the optical signal can be improved.

【0033】また一方、前記枠体2の上面には、例え
ば、鉄ーニッケルーコバルト合金や鉄ーニッケル合金等
の金属材料から成る蓋部材3が接合され、これによって
基体1と枠体2と蓋部材3とからなる容器の内部に光半
導体素子4が気密に封止されることとなる。
On the other hand, a lid member 3 made of a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy is joined to the upper surface of the frame 2, thereby forming the base 1, frame 2 and lid. The optical semiconductor element 4 is hermetically sealed inside the container including the member 3.

【0034】前記蓋部材3の枠体2上面への接合は、例
えば、シームウエルド法等の溶接によって行われる。
The lid member 3 is joined to the upper surface of the frame 2 by, for example, welding such as a seam welding method.

【0035】かくして本発明の光半導体素子収納用パッ
ケージによれば、基体1の光半導体素子載置部1aに光
半導体素子4を間にペルチェ素子5等を挟んで載置固定
するとともに光半導体素子4の各電極をボンデイングワ
イヤ8を介して外部リード端子6に電気的に接続し、次
に枠体2の上面に蓋部材3を接合させ、基体1と枠体2
と蓋部材3とから成る容器内部に光半導体素子4を収容
し、最後に枠体2の固定部材9に光ファイバー部材11
を取着接続させることによって最終製品としての光半導
体装置となり、外部電気回路から供給される駆動信号に
よって光半導体素子4に光を励起させ、該励起した光を
非晶質ガラスから成る透光性部材10を通して光ファイ
バー部材11に授受させるとともに該光ファイバー部材
11の光ファイバー内を伝達させることによって高速光
通信等に使用される。
Thus, according to the package for housing an optical semiconductor element of the present invention, the optical semiconductor element 4 is mounted and fixed on the optical semiconductor element mounting portion 1a of the base 1 with the Peltier element 5 or the like interposed therebetween. 4 are electrically connected to the external lead terminals 6 via bonding wires 8, and then the lid member 3 is joined to the upper surface of the frame 2, and the base 1 and the frame 2
The optical semiconductor element 4 is accommodated in a container including the lid member 3 and the optical fiber element 11.
The optical semiconductor device as a final product is obtained by attaching and connecting the optical semiconductor device 4. Light is excited in the optical semiconductor element 4 by a drive signal supplied from an external electric circuit, and the excited light is transmitted through a light-transmitting material made of amorphous glass. The optical fiber member 11 is used for high-speed optical communication and the like by transmitting and receiving the optical fiber member 11 through the member 10 and transmitting the optical fiber member 11 through the optical fiber.

【0036】なお、本発明は上述の実施例に限定される
ものではなく、本発明の要旨を逸脱しない範囲であれば
種々の変更は可能であり、例えば上述の実施例では外部
リード端子6を基体1に固定したがこれを枠体2に固定
してもよい。
It should be noted that the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the scope of the present invention. Although fixed to the base 1, it may be fixed to the frame 2.

【0037】[0037]

【発明の効果】本発明の光半導体素子収納用パッケージ
によれば、固定部材を40乃至60重量%の鉄と40乃
至60重量%のニッケルの合金で形成したことから固定
部材の熱膨張係数が約9.5×10-6/℃(Rt〜40
0℃)となって透光性部材の熱膨張係数に近似した値と
なり、その結果、透光性部材と固定部材とを取着させる
際、透光性部材と固定部材との間に両者の熱膨張係数の
相違に起因する熱応力が発生することは殆どなく、透光
性部材に熱応力が内在することも殆どない。従って、光
半導体素子が励起した光を透光性部材を通して光ファイ
バーに伝達させた場合、光半導体素子の励起した光は透
光性部材に内在する熱応力に起因して複屈折を起こすこ
とはなくそのまま光ファイバー部材に授受されることと
なり、光信号の伝送効率が極めて高いものとなる。
According to the package for housing an optical semiconductor element of the present invention, since the fixing member is formed of an alloy of 40 to 60% by weight of iron and 40 to 60% by weight of nickel, the coefficient of thermal expansion of the fixing member is reduced. About 9.5 × 10 −6 / ° C. (Rt〜40
0 ° C.), which is a value approximating the coefficient of thermal expansion of the translucent member. As a result, when the translucent member and the fixing member are attached to each other, the distance between the translucent member and the fixing member is reduced. Thermal stress due to the difference in thermal expansion coefficient is hardly generated, and thermal stress is hardly present in the translucent member. Therefore, when the light excited by the optical semiconductor element is transmitted to the optical fiber through the light transmitting member, the light excited by the optical semiconductor element does not cause birefringence due to the thermal stress inherent in the light transmitting member. It is transmitted and received as it is to the optical fiber member, and the transmission efficiency of the optical signal becomes extremely high.

【0038】また前記固定部材は枠体にレーザー光線照
射等による局部加熱法により溶接し取着することから固
定部材と枠体の熱膨張係数が相違するとしても取着時の
加熱領域が狭いために両者間に発生する熱応力は極めて
小さなものとなり、その結果、固定部材と枠体の熱膨張
係数の相違に起因する熱応力が透光性部材に大きく作用
することはなく、透光性部材を通過する光に複屈折を招
来させることが有効に防止され、光ファイバーに光半導
体素子が励起した光を効率良く授受させて、光信号の伝
送効率を良好となすことができる。
Further, since the fixing member is welded and attached to the frame by a local heating method using laser beam irradiation or the like, even if the fixing member and the frame have different coefficients of thermal expansion, the heating area during attachment is narrow. The thermal stress generated between the two becomes extremely small, and as a result, the thermal stress caused by the difference in the thermal expansion coefficient between the fixing member and the frame does not greatly affect the translucent member. Birefringence of the passing light is effectively prevented, and the light excited by the optical semiconductor element is efficiently transmitted to and received from the optical fiber, so that the transmission efficiency of the optical signal can be improved.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の光半導体素子収納用パッケージの一実
施例を示す断面図である。
FIG. 1 is a sectional view showing an embodiment of a package for housing an optical semiconductor element of the present invention.

【図2】図1に示す光半導体素子収納用パッケージの要
部拡大断面図である。
FIG. 2 is an enlarged sectional view of a main part of the package for housing an optical semiconductor element shown in FIG. 1;

【符号の説明】[Explanation of symbols]

1・・・基体 1a・・光半導体素子載置部 2・・・枠体 2a・・貫通孔 3・・・蓋部材 4・・・光半導体素子 9・・・固定部材 10・・・透光性部材 11・・・光ファイバー部材 12・・・メタライズ層 DESCRIPTION OF SYMBOLS 1 ... Base 1a ... Opto-semiconductor element mounting part 2 ... Frame 2a ... Through-hole 3 ... Lid member 4 ... Optical semiconductor element 9 ... Fixing member 10 ... Translucent Functional member 11: Optical fiber member 12: Metallized layer

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】上面に光半導体素子が載置される載置部を
有する基体と、前記基体上に光半導体素子載置部を囲繞
するように取着され、側部に貫通孔を有する鉄ーニッケ
ルーコバルト合金から成る枠体と、前記枠体の貫通孔周
辺に取着され、内部に光信号が伝達される空間を有する
筒状の固定部材と、前記筒状の固定部材に取着され、固
定部材の内部を塞ぐ非晶質ガラスから成る透光性部材
と、前記枠体の上面に取着され、光半導体素子を気密に
封止する蓋部材とから成る光半導体素子収納用パッケー
ジであって、前記固定部材は40乃至60重量%の鉄と
40乃至60重量%のニッケルの合金から成り、枠体の
貫通孔周辺の外表面に局部加熱法により溶接されている
ことを特徴とする光半導体素子収納用パッケージ。
1. A base having a mounting portion on which an optical semiconductor element is mounted on an upper surface, and an iron mounted on the base so as to surround the optical semiconductor device mounting portion and having a through hole in a side portion. A frame member made of a nickel-cobalt alloy, a cylindrical fixing member attached around the through hole of the frame member, and having a space in which an optical signal is transmitted, and attached to the cylindrical fixing member. An optical semiconductor element housing package comprising: a transparent member made of amorphous glass for closing the inside of the fixing member; and a lid member attached to the upper surface of the frame and hermetically sealing the optical semiconductor element. The fixing member is made of an alloy of 40 to 60% by weight of iron and 40 to 60% by weight of nickel, and is welded to an outer surface around a through hole of the frame by a local heating method. Package for storing optical semiconductor elements.
JP10274040A 1998-09-28 1998-09-28 Package for optical semiconductor element housing Pending JP2000106445A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP10274040A JP2000106445A (en) 1998-09-28 1998-09-28 Package for optical semiconductor element housing
US09/405,961 US6426591B1 (en) 1998-09-28 1999-09-27 Package for housing photosemiconductor element
FR9912056A FR2788376B1 (en) 1998-09-28 1999-09-28 HOUSING FOR PHOTO ELEMENT-DRIVER

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10274040A JP2000106445A (en) 1998-09-28 1998-09-28 Package for optical semiconductor element housing

Publications (1)

Publication Number Publication Date
JP2000106445A true JP2000106445A (en) 2000-04-11

Family

ID=17536137

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10274040A Pending JP2000106445A (en) 1998-09-28 1998-09-28 Package for optical semiconductor element housing

Country Status (1)

Country Link
JP (1) JP2000106445A (en)

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