JP2000106287A - Mosfet antiphase control dimmer - Google Patents
Mosfet antiphase control dimmerInfo
- Publication number
- JP2000106287A JP2000106287A JP27672798A JP27672798A JP2000106287A JP 2000106287 A JP2000106287 A JP 2000106287A JP 27672798 A JP27672798 A JP 27672798A JP 27672798 A JP27672798 A JP 27672798A JP 2000106287 A JP2000106287 A JP 2000106287A
- Authority
- JP
- Japan
- Prior art keywords
- mosfet
- current
- power supply
- unit
- mosfets
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Circuit Arrangement For Electric Light Sources In General (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、交流電源を位相制
御して照明負荷に供給する電力を制御して調光を行う位
相制御調光器に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a phase control dimmer for controlling light supplied to a lighting load by controlling the phase of an AC power supply.
【0002】[0002]
【従来の技術】従来図3に示すように、交流電源Eを位
相制御して白熱灯負荷Lに供給する電力を制御して調光
を行う位相制御調光器1には、スイッチング素子に自己
保持可能なサイリスタ素子を用いるものと、MOSFE
Tのような任意に消弧可能な素子を用いるものとがあ
る。電流の立ち上がり時は、必ずゼロクロスとなり通常
の位相制御回路と比較して電流サージが低減されるため
位相制御装置が発生する電磁ノイズを低減したり、ラン
プの唸りに効果のある逆位相制御動作を行うには、オフ
を電流0でしか自己消弧できないサイリスタ素子は用い
ることができない。2. Description of the Related Art Conventionally, as shown in FIG. 3, a phase control dimmer 1 that controls the phase of an AC power supply E to control the power supplied to an incandescent lamp load L to perform dimming includes a switching element that has a switching element. One that uses a thyristor element that can be held
Some devices use an arbitrarily extinguishable element such as T. When the current rises, it always becomes zero crossing, and the current surge is reduced compared to a normal phase control circuit.Therefore, the anti-phase control operation that is effective for reducing the electromagnetic noise generated by the phase control device and the humming of the lamp is performed. To do so, a thyristor element that can self-extinguish only with a current of 0 cannot be used.
【0003】そこで、従来のMOSFETを用いた位相
制御調光器は点弧位相が90度の時の最も大きくなる突
入電流に耐え得る容量の素子を採用している。故に、図
4に示すように、MOSFETQ1,Q2等を、電力制
御を行うスイッチング素子として用いて、直列でかつ逆
方向に接続し一方を交流波形の正方向通電に、また他方
を負方向通電用い、ゲート電源G1を使用し、スイッチ
ング素子のゲート電圧を制御して導通モード及び非導通
モードの制御を行う位相制御調光器1が従来例としてあ
った。Therefore, a conventional phase control dimmer using a MOSFET employs an element having a capacity capable of withstanding an inrush current which becomes the largest when the ignition phase is 90 degrees. Therefore, as shown in FIG. 4, the MOSFETs Q1, Q2 and the like are used as switching elements for controlling power and are connected in series and in the reverse direction, one is used for energizing in the positive direction of an AC waveform, and the other is used for energizing in the negative direction. A phase control dimmer 1 that controls a conduction mode and a non-conduction mode by controlling a gate voltage of a switching element using a gate power supply G1 has been a conventional example.
【0004】白熱灯のフィラメントは常温では抵抗値が
小さいため、電流を負荷に流し始める瞬間は白熱灯定格
の10倍以上の突入電流が流れ、この状態はフィラメン
トが温まるまで続く。Since the filament of an incandescent lamp has a small resistance at room temperature, an inrush current of 10 times or more the rated value of the incandescent lamp flows at the moment when the current starts to flow to the load, and this state continues until the filament is heated.
【0005】ここで、一般にMOSFETはサイリスタ
素子に比べて耐サージ電流定格が低い。また、交流電源
の印加から駆動電源の出力電圧が十分に上がるまでは時
間がかかるため、MOSFETのスレッシュホールドぎ
りぎりのゲート電圧でオンさせた場合は、オン抵抗が十
分小さくならず定格以内の電流であってもオン損失が定
格オーバして破壊を起こす可能性がある。そのため、従
来のMOSFET位相制御調光器は素子の定格のわりに
は定格負荷容量を大きくできないという欠点があった。In general, MOSFETs have a lower surge current rating than thyristor elements. In addition, since it takes time from the application of the AC power supply to the output voltage of the drive power supply sufficiently rising, when the MOSFET is turned on at the gate voltage just below the threshold, the on-resistance does not become sufficiently small and the current within the rating is not reached. Even if there is, the ON loss may exceed the rating and cause destruction. For this reason, the conventional MOSFET phase control dimmer has a disadvantage that the rated load capacity cannot be increased for the element rating.
【0006】[0006]
【発明が解決しようとする課題】本発明は上記の問題点
を解決するために成されたものであり、その目的とする
ところは、調光器の起動時は点灯信号のタイミングに関
わらず、起動時の突入電流がMOSFETの定格を越え
るとタイマー回路が動作して一定時間MOSFETをオ
フさせ、負荷電流がMOSFETの定格を越えなくなる
までこの動作を繰り返すことにより、白熱灯のフィラメ
ントが十分に温まり電流が安定するまで、制御信号のオ
ン指令幅に関わらずMOSFETに流れる電流が、所定
値以上にならないようにオン幅を制限する動作を行うこ
とで、従来より調光器の負荷定格を大きくすることでき
る優れたMOSFET逆位相制御調光器を提供すること
にある。SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a light control device which starts a dimmer regardless of the timing of a lighting signal. When the inrush current at startup exceeds the rating of the MOSFET, the timer circuit operates to turn off the MOSFET for a certain period of time, and this operation is repeated until the load current does not exceed the rating of the MOSFET, so that the filament of the incandescent lamp sufficiently warms up. Until the current stabilizes, the load rating of the dimmer is increased by performing an operation of limiting the ON width so that the current flowing through the MOSFET does not exceed a predetermined value regardless of the ON command width of the control signal. It is an object of the present invention to provide an excellent MOSFET anti-phase control dimmer.
【0007】[0007]
【課題を解決するための手段】請求項1発明では、 M
OSFET部の電流検出部と該電流検出部からの信号が
前記MOSFETの定格を越えているがどうか判定する
比較回路部と、前記MOSFET部の2つのMOSFE
TのG−S端子に接続したトランジスタと、前記比較回
路部の信号により一定期間前記トランジスタをオンさせ
MOSFETのG-Sを短絡させるタイマー回路と、を
従来のMOSFET位相制御調光器に追加した構成をと
っており、起動スイッチがオンして前記MOSFET部
に突入電流が流れ、該突入電流が前記2つのMOSFE
Tの定格を越えると前記タイマー回路が動作して、一定
時間前記MOSFET部をオフさせ、負荷電流が前記2
つのMOSFETの定格を越えなくなるまでこの動作を
繰り返すことによってフィラメントが十分に温まり電流
が安定するまでは、制御信号のオン指令幅に関わらずM
OSFETに流れる電流を制限することを特徴としてい
る。According to the first aspect of the present invention, M
A current detection section of the OSFET section, a comparison circuit section for determining whether a signal from the current detection section exceeds the rating of the MOSFET, and two MOSFETs of the MOSFET section;
A transistor connected to the GS terminal of T and a timer circuit for turning on the transistor for a certain period of time and short-circuiting the GS of the MOSFET by a signal of the comparison circuit unit are added to the conventional MOSFET phase control dimmer. When the start switch is turned on, an inrush current flows through the MOSFET section, and the inrush current is applied to the two MOSFETs.
When the rating of T is exceeded, the timer circuit operates to turn off the MOSFET section for a certain period of time, and the load current becomes 2
By repeating this operation until the ratings of the two MOSFETs are no longer exceeded, until the filament is sufficiently heated and the current is stabilized, M
It is characterized in that the current flowing through the OSFET is limited.
【0008】[0008]
【発明の実施の形態】以下、本発明に係るMOSFET
逆位相制御調光器の一実施の形態を図1及び図2に基づ
いて説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a MOSFET according to the present invention will be described.
One embodiment of an anti-phase control dimmer will be described with reference to FIGS.
【0009】図1は、MOSFET逆位相制御調光器と
交流電源と白熱灯負荷との配線図であり、図2は、回路
動作のタイミングチャートである。FIG. 1 is a wiring diagram of a MOSFET anti-phase control dimmer, an AC power supply, and an incandescent lamp load, and FIG. 2 is a timing chart of circuit operation.
【0010】図1に示される調光器はメインスイッチで
あるMOSFET部1と、該MOSFET部1のMOS
FETQ1、Q2のG-S間に電圧を印加するための駆
動電源部2と、前記MOSFET部1のMOSFETQ
1、Q2に流れるドレイン電流を電圧として検出する電
流検出部4と、該電流検出部4の出力を監視する比較回
路部5と、該比較回路部5より前記MOSFET部1の
過電流信号を受けると一定期間前記MOSFET部の2
つのMOSFETのG−S端子に接続したトランジスタ
Tr2をオンさせ、前記MOSFET部1のMOSFE
TQ1、Q2のG−S間を短絡して前記MOSFET部
1をオフさせるタイマー回路と、制御信号より前記MO
SFET部1をオン・オフ動作させるトランジスタTr
1と、を主要構成としている。The dimmer shown in FIG. 1 has a MOSFET section 1 as a main switch, and a MOS of the MOSFET section 1.
A drive power supply unit 2 for applying a voltage between the GS of the FETs Q1 and Q2, and a MOSFET Q of the MOSFET unit 1;
1, a current detection unit 4 for detecting a drain current flowing through Q2 as a voltage, a comparison circuit unit 5 for monitoring the output of the current detection unit 4, and an overcurrent signal of the MOSFET unit 1 from the comparison circuit unit 5. And 2 of the MOSFET section for a certain period
The transistor Tr2 connected to the GS terminal of the two MOSFETs is turned on, and the MOSFET
A timer circuit for short-circuiting the GS of TQ1 and Q2 to turn off the MOSFET section 1;
A transistor Tr for turning on / off the SFET unit 1
1 is a main configuration.
【0011】起動スイッチSW1が、オンすると前記M
OSFET部1のMOSFETQ1、Q2を駆動させる
ため前記駆動電源部2は、若干の時間を要して、定格い
っぱいのドレイン電流を流してもASO破壊を起こさな
いだけの十分な電圧を出力する。但し、起動スイッチは
任意のタイミングでオンされるので、所定の電圧まであ
がる時間は一定ではない。When the start switch SW1 is turned on, the M
In order to drive the MOSFETs Q1 and Q2 of the OSFET section 1, the drive power supply section 2 requires a certain amount of time, and outputs a voltage sufficient to prevent ASO breakdown even when a rated drain current flows. However, since the start switch is turned on at an arbitrary timing, the time required to reach a predetermined voltage is not constant.
【0012】また、0V時点でオン可能状態になった前
記MOSFETQ1、Q2は制御信号に従ってサインカ
ーブで立ち上がるオン電流を白熱灯負荷Lに流す。The MOSFETs Q1 and Q2, which are turned on at the time of 0V, supply an incandescent lamp load L with an on-current that rises in a sine curve according to a control signal.
【0013】この時、白熱灯のフィラメントは温まって
いないので小さい抵抗値となり突入電流が発生する。At this time, since the filament of the incandescent lamp is not heated, the resistance value becomes small, and an inrush current is generated.
【0014】前記白熱灯負荷Lに流れる電流の値は、カ
レントトランスCAと全波整流回路DB等からなる前記
電流検出部4によって、前記比較回路部5のコンパレー
タCP2が前記MOSFETQ1,Q2の定格電流以上
であると判定すると、その信号を受信したすぐさまタイ
マー回路7に出力する。該タイマー回路7は、前記比較
回路部5からの信号を受けると一定期間前記MOSFE
T部の2つのMOSFETのG−S端子に接続したトラ
ンジスタTr2をオンさせて、前記MOSFET部1の
MOSFETQ1、Q2のG−S間を短絡して、前記M
OSFET部1をオフさせる。The value of the current flowing through the incandescent lamp load L is determined by the current detecting section 4 comprising a current transformer CA and a full-wave rectifier circuit DB, etc., so that the comparator CP2 of the comparing circuit section 5 If it is determined that this is the case, the signal is output to the timer circuit 7 immediately upon receiving the signal. When the timer circuit 7 receives a signal from the comparison circuit section 5, the timer circuit 7
The transistor Tr2 connected to the GS terminals of the two MOSFETs in the T section is turned on, and the GS of the MOSFETs Q1 and Q2 of the MOSFET section 1 is short-circuited.
The OSFET unit 1 is turned off.
【0015】前記タイマー回路7が、動作を終了し前記
トランジスタTr2をオフさせて再び前記Tr1が制御
信号を受けて前記MOSFET部1のMOSFETQ
1、Q2のG−S間を短絡して、前記MOSFET部1
をオンさせたときに、まだ白熱灯のフィラメントの温度
が十分温まっていないと最初ほどではないが過電流がな
がれる。この動作を、突入電流が前記MOSFETQ
1,Q2の定格電流以下になるまで続ける。尚、前記タ
イマー回路7が前記トランジスタTr2をオンさせてい
る時間はいくらでも良く、特に前記交流電源Eとの同期
をとる必要はない。The timer circuit 7 terminates its operation, turns off the transistor Tr2, and again receives a control signal from the transistor Tr1 so that the MOSFET Q
1, the GS of Q2 is short-circuited,
If the filament of the incandescent lamp is not sufficiently heated when turning on the lamp, an overcurrent will flow though not as much as at the beginning. This operation is performed by setting the inrush current to the MOSFET Q
The operation is continued until the current becomes equal to or less than the rated current of the first and second transistors Q2. The time during which the timer circuit 7 turns on the transistor Tr2 may be any time, and it is not particularly necessary to synchronize with the AC power supply E.
【0016】[0016]
【発明の効果】上説明したように、請求項1記載のMO
SFET位相制御調光器にあっては、0V検出回路や電
源電圧比較回路備えてなくても突入電流をMOSFET
の定格以下に押さえることができるので、従来のMOS
FET調光器より大きな負荷定格を設定することができ
ると言う効果を奏する。As described above, the MO according to claim 1 is used.
In the SFET phase control dimmer, even if the 0V detection circuit and the power supply voltage comparison circuit are not provided, the inrush current
Of the conventional MOS
There is an effect that a load rating larger than that of the FET dimmer can be set.
【図1】本発明の第1の実施の形態に係る逆位相制御調
光器と交流電源と白熱灯負荷との配線図である。FIG. 1 is a wiring diagram of an anti-phase control dimmer, an AC power supply, and an incandescent lamp load according to a first embodiment of the present invention.
【図2】上記逆位相制御調光器の回路動作のタイミング
チャートである。FIG. 2 is a timing chart of a circuit operation of the anti-phase control dimmer.
【図3】従来のMOSFET等をスイッチ素子に用いた
逆位相制御動作が可能な位相制御調光器と交流電源と負
荷との配線図である。FIG. 3 is a wiring diagram of a conventional phase control dimmer capable of performing an inverse phase control operation using a MOSFET or the like as a switch element, an AC power supply, and a load.
【図4】従来のMOSFET等をスイッチ素子に用いた
逆位相制御動作が可能な位相制御調光器の詳細回路図で
ある。FIG. 4 is a detailed circuit diagram of a conventional phase control dimmer capable of performing an inverse phase control operation using a MOSFET or the like as a switch element.
1 MOSFET部 2 駆動電源部 4 電流検出部 5 比較回路部 6 制御部 7 タイマー回路 E 交流電源 Q1 MOSFET Q2 MOSFET L 白熱灯負荷 Tr2 トランジスタ CA カレントトランス DB 全波整流回路 Reference Signs List 1 MOSFET section 2 Drive power supply section 4 Current detection section 5 Comparison circuit section 6 Control section 7 Timer circuit E AC power supply Q1 MOSFET Q2 MOSFET L Incandescent lamp load Tr2 transistor CA Current transformer DB Full-wave rectifier circuit
Claims (1)
した2つのMOSFETを有するMOSFET部と該M
OSFET部を駆動するための電源等を有する電源部を
内蔵し、前記MOSFET部により交流電源を逆位相制
御することで白熱灯負荷に供給する電力を制御する位相
制御調光器において、前記MOSFET部の2つのMO
SFETに流れるドレイン電流を電圧として検出する電
流検出部と、該電流検出部の出力を監視する比較回路部
と、前記MOSFET部の2つのMOSFETのG−S
端子に接続したトランジスタと、前記比較回路部からの
信号に応じて前記トランジスタを動作させるタイマー回
路とを設け、起動時の突入電流が前記2つのMOSFE
Tの定格を越えると前記タイマー回路が動作して一定時
間前記MOSFET部をオフさせ、突入電流が前記2つ
のMOSFETの定格を越えなくなるまでこの動作を繰
り返すことにより、白熱灯のフィラメントが十分に温ま
り電流が安定するまで制御信号のオン指令幅に関わら
ず、前記MOSFET部に流れる電流が所定値以上にな
らないようにオン幅を制限すること特徴とするMOSF
ET逆位相制御調光器。A MOSFET section having two MOSFETs connected in series and in opposite directions to an AC power supply;
A phase control dimmer incorporating a power supply unit having a power supply for driving an OSFET unit and the like, and controlling the power supplied to an incandescent lamp load by controlling an AC power supply in an opposite phase by the MOSFET unit. Two MOs
A current detection unit for detecting a drain current flowing through the SFET as a voltage, a comparison circuit unit for monitoring the output of the current detection unit, and GS of two MOSFETs of the MOSFET unit
A transistor connected to a terminal; and a timer circuit for operating the transistor in accordance with a signal from the comparison circuit unit, wherein the inrush current at the time of startup is reduced by the two MOSFETs.
When the rating of T is exceeded, the timer circuit operates to turn off the MOSFET section for a certain period of time, and this operation is repeated until the rush current does not exceed the rating of the two MOSFETs. A MOSF, wherein the ON width is limited so that the current flowing through the MOSFET section does not exceed a predetermined value irrespective of the ON command width of the control signal until the current is stabilized.
ET antiphase control dimmer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP27672798A JP2000106287A (en) | 1998-09-30 | 1998-09-30 | Mosfet antiphase control dimmer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP27672798A JP2000106287A (en) | 1998-09-30 | 1998-09-30 | Mosfet antiphase control dimmer |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2000106287A true JP2000106287A (en) | 2000-04-11 |
Family
ID=17573507
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP27672798A Pending JP2000106287A (en) | 1998-09-30 | 1998-09-30 | Mosfet antiphase control dimmer |
Country Status (1)
Country | Link |
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JP (1) | JP2000106287A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20030041236A (en) * | 2001-11-19 | 2003-05-27 | 기아자동차주식회사 | Electric Power Control Device Associated With Initial Rush and Bound Electric Current of Vehicle |
JP2007179909A (en) * | 2005-12-28 | 2007-07-12 | Marumo Denki Kk | Incandescent lamp dimmer and electric power control method for incandescent lamp dimmer |
JP2011258431A (en) * | 2010-06-09 | 2011-12-22 | Mitsubishi Electric Corp | Power supply circuit, illumination device and illumination system |
JP6239793B1 (en) * | 2016-09-30 | 2017-11-29 | 中▲達▼▲電▼通股▲フン▼有限公司 | Lighting system, single live wire electricity acquisition device and control method thereof |
-
1998
- 1998-09-30 JP JP27672798A patent/JP2000106287A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20030041236A (en) * | 2001-11-19 | 2003-05-27 | 기아자동차주식회사 | Electric Power Control Device Associated With Initial Rush and Bound Electric Current of Vehicle |
JP2007179909A (en) * | 2005-12-28 | 2007-07-12 | Marumo Denki Kk | Incandescent lamp dimmer and electric power control method for incandescent lamp dimmer |
JP2011258431A (en) * | 2010-06-09 | 2011-12-22 | Mitsubishi Electric Corp | Power supply circuit, illumination device and illumination system |
JP6239793B1 (en) * | 2016-09-30 | 2017-11-29 | 中▲達▼▲電▼通股▲フン▼有限公司 | Lighting system, single live wire electricity acquisition device and control method thereof |
US10129949B2 (en) | 2016-09-30 | 2018-11-13 | Delta Electronics (Shanghai) Co., Ltd | Lighting system, power drawing device using single live wire and method for controlling the same |
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