JP2000106285A - Mosfet antiphase control dimmer - Google Patents

Mosfet antiphase control dimmer

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Publication number
JP2000106285A
JP2000106285A JP27672998A JP27672998A JP2000106285A JP 2000106285 A JP2000106285 A JP 2000106285A JP 27672998 A JP27672998 A JP 27672998A JP 27672998 A JP27672998 A JP 27672998A JP 2000106285 A JP2000106285 A JP 2000106285A
Authority
JP
Japan
Prior art keywords
power supply
mosfet
unit
current
section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP27672998A
Other languages
Japanese (ja)
Inventor
Ichiro Tatezawa
一郎 立澤
Koji Soshin
耕児 宗進
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Electric Works Co Ltd
Original Assignee
Matsushita Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Works Ltd filed Critical Matsushita Electric Works Ltd
Priority to JP27672998A priority Critical patent/JP2000106285A/en
Publication of JP2000106285A publication Critical patent/JP2000106285A/en
Pending legal-status Critical Current

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Abstract

PROBLEM TO BE SOLVED: To provide a MOSFET antiphase control dimmer capable of increasing the load rating of equipment by limiting a rush current. SOLUTION: An antiphase control dimmer, having a built-in MOSFET part 1 which has two MOSFETs connected in series with an AC power supply E, along opposite directions and a built-in power supply part 2 for driving the MOSFET part 1, and subjecting the AC power supply E to antiphase control by use of the MOSFET part 1 to thereby control the power supplied to load, is provided with a 0-V detection circuit 3 for detecting the zero-cross point of the AC power supply E, a current detection part 4 for detecting current flowing in the MOSFET part 1, a comparison circuit part 5 for monitoring the outputs from a current-detection part 4 and the output of the driving power supply part 2, an optically coupled semiconductor relay 6 connected to the MOSFET part 1, and a latch circuit 7 operating the optically coupled semiconductor relay 6, according to the signals from the comparison circuit part 5 and the 0-V detection circuit 3. The on width of an excess current is limited, irrespective of the on command width of the control signal, so that the current flowing in the MOSFET part 1 does not become larger than a prescribed value.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、交流電源を位相制
御して照明負荷に供給する電力を制御して調光を行う逆
位相制御調光器に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an anti-phase control dimmer for controlling light supplied to a lighting load by controlling the phase of an AC power supply.

【0002】[0002]

【従来の技術】従来図7に示すように交流電源Eを位相
制御して、白熱灯負荷Lに供給する電力を制御して調光
を行う位相制御調光器1にはスイッチング素子に自己保
持可能なサイリスタ素子を用いるものと、MOSFET
のような任意に消弧可能な素子を用いるものとがある。
電流の立ち上がり時は必ずゼロクロスとなり通常の位相
制御回路と比較して電流サージが低減されるため位相制
御装置が発生する電磁ノイズを低減したり、ランプの唸
りに効果のある逆位相制御動作を行うには、オフを電流
0でしか自己消弧できないサイリスタ素子は用いること
ができない。
2. Description of the Related Art Conventionally, as shown in FIG. 7, a phase control dimmer 1 that controls the phase of an AC power supply E to control the power supplied to an incandescent lamp load L to perform dimming is self-holding in a switching element. With possible thyristor elements and MOSFETs
There is a device using an arbitrarily extinguishable element such as
When the current rises, it always crosses zero and the current surge is reduced compared to a normal phase control circuit.This reduces the electromagnetic noise generated by the phase control device and performs an anti-phase control operation that is effective for the growling of the lamp. Therefore, a thyristor element that can self-extinguish only with a current of 0 cannot be used.

【0003】そこで、従来のMOSFETを用いた位相
制御調光器は点弧位相が90度の時の最も大きくなる突
入電流に耐え得る容量の素子を採用している。故に、図
8に示すように、MOSFETQ1,Q2等を、電力制
御を行うスイッチング素子として用いて、直列でかつ逆
方向に接続し一方を交流波形の正方向通電に、また他方
を負方向通電用い、ゲート電源G1を使用しスイッチン
グ素子のゲート電圧を制御して、導通モード及び非導通
モードの制御を行う位相制御調光器1が従来例としてあ
った。
Therefore, a conventional phase control dimmer using a MOSFET employs an element having a capacity capable of withstanding an inrush current which becomes the largest when the ignition phase is 90 degrees. Therefore, as shown in FIG. 8, the MOSFETs Q1, Q2, etc., are used as switching elements for controlling power, are connected in series and in the reverse direction, and one is used for energizing the AC waveform in the positive direction and the other is used for the negative energizing. A phase control dimmer 1 that controls a conduction mode and a non-conduction mode by controlling a gate voltage of a switching element using a gate power supply G1 has been a conventional example.

【0004】白熱灯のフィラメントは常温では抵抗値が
小さいため、電流を負荷に流し始める瞬間は白熱灯定格
の10倍以上の突入電流が流れ、この状態はフィラメン
トが温まるまで続く。
Since the filament of an incandescent lamp has a small resistance at room temperature, an inrush current of 10 times or more the rated value of the incandescent lamp flows at the moment when the current starts to flow to the load, and this state continues until the filament is heated.

【0005】ここで、一般にMOSFETはサイリスタ
素子に比べて耐サージ電流定格が低い。また、交流電源
の印加から駆動電源の出力電圧が十分に上がるまでは時
間がかかるため、MOSFETのスレッシュホールドぎ
りぎりのゲート電圧でオンさせた場合は、オン抵抗が十
分小さくならず定格以内の電流であってもオン損失が定
格オーバして、破壊を起こす可能性がある。そのため、
従来のMOSFET位相制御調光器は素子の定格のわり
には定格負荷容量を大きくできないという欠点があっ
た。
In general, MOSFETs have a lower surge current rating than thyristor elements. In addition, since it takes time from the application of the AC power supply to the output voltage of the drive power supply sufficiently rising, when the MOSFET is turned on at the gate voltage just below the threshold, the on-resistance does not become sufficiently small and the current within the rating is not reached. Even if there is, the ON loss may exceed the rating and cause destruction. for that reason,
The conventional MOSFET phase control dimmer has a disadvantage that the rated load capacity cannot be increased for the element rating.

【0006】[0006]

【発明が解決しようとする課題】本発明は上記の問題点
を解決するために成されたものであり、その目的とする
ところは、調光器の起動時は点灯信号のタイミングに関
わらず、駆動電源の出力電圧が十分に上がった後、交流
電源の電圧が0V時にMOSFETをオンさせて、かつ
白熱灯の突入電流に対しては過電流検出機能を持ち、フ
ィラメントが十分に温まり電流が安定するまでは、制御
信号のオン幅に関わらずMOSFETに流れる電流が、
所定値以上にならないようにオン幅を制限する動作を行
うことで、調光器の負荷定格を大きくできる優れたMO
SFET逆位相制御調光器を提供することにある。
SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a light control device which starts a dimmer regardless of the timing of a lighting signal. After the output voltage of the drive power supply has risen sufficiently, the MOSFET is turned on when the voltage of the AC power supply is 0 V, and it has an overcurrent detection function for the inrush current of incandescent lamps. Until the current flows through the MOSFET regardless of the ON width of the control signal,
An excellent MO that can increase the load rating of the dimmer by performing the operation of limiting the ON width so as not to exceed a predetermined value
An object of the present invention is to provide an SFET antiphase control dimmer.

【0007】[0007]

【課題を解決するための手段】請求項1の発明では、交
流電源のゼロクロス点を検出する0V検出回路と、前記
MOSFET部に流れるドレイン電流を電圧として検出
する電流検出部と、該電流検出部からの出力を監視する
第1の比較回路と前記駆動電源部の出力を監視する第2
の比較回路とから成る比較回路部と、前記MOSFET
部の2つのMOSFETのG−S端子に出力側を接続し
たノーマリーオン光結合型半導体リレーと、前記比較回
路部及び0V検出回路それぞれの信号に応じて前記ノー
マリーオン光結合型半導体リレーを動作させるラッチ回
路とを従来のMOSFET逆位相制御調光器に追加した
構成をとっており、装置の起動時は点灯信号のタイミン
グに関わらず、駆動電源が十分に上がった後、交流電源
の電圧が0V時に前記MOSFET部の2つのMOSF
ETをオンさせて、かつ白熱灯の突入電流に対しては過
電流検出機能を持ち、フィラメントが十分に温まり電流
が安定するまで制御信号のオン指令幅に関わらずMOS
FETに流れる最大電流が定格以上にならないようにオ
ン幅を制限することを特徴としている。
According to the first aspect of the present invention, there is provided a 0 V detection circuit for detecting a zero-cross point of an AC power supply, a current detection unit for detecting a drain current flowing through the MOSFET unit as a voltage, and a current detection unit. And a second comparator for monitoring the output of the driving power supply unit.
A comparison circuit unit comprising: a comparison circuit;
A normally-on optically-coupled semiconductor relay having an output side connected to the GS terminals of two MOSFETs of the unit, and the normally-on optically-coupled semiconductor relay according to signals of the comparison circuit unit and the 0 V detection circuit. A latch circuit to operate is added to the conventional MOSFET reverse-phase control dimmer. When the device is started, regardless of the timing of the lighting signal, after the drive power supply has risen sufficiently, the voltage of the AC power supply Is 0V, the two MOSFETs of the MOSFET section
Turns on the ET and has an overcurrent detection function for the inrush current of the incandescent lamp. The MOS is turned on regardless of the ON command width of the control signal until the filament is sufficiently heated and the current is stabilized.
The feature is that the ON width is limited so that the maximum current flowing through the FET does not exceed the rating.

【0008】請求項2の発明では、請求項1記載の調光
器におけるノーマリーオン光結合型半導体リレーの動作
を、スイッチング素子であるMOSFETの駆動電源を
有する電源部に負出力機能を追加し、ノーマリーオンの
接合型FETとフォトカプラを用いて、フォトカプラの
2次側をMOSFETのG−S端子に2次側を接続した
構成をとっており、装置の起動時は点灯信号のタイミン
グに関わらず、駆動電源が十分に上がった後、交流電源
の電圧が0V時にMOSFETをオンさせて、かつ白熱
灯の突入電流に対しては過電流検出機能を持ち、フィラ
メントが十分に温まり電流が安定するまで制御信号のオ
ン指令幅に関わらずMOSFETに流れる電流が定格以
上にならないようにオン幅を制限することを特徴として
いる。
According to a second aspect of the present invention, the operation of the normally-on optically coupled semiconductor relay in the dimmer according to the first aspect is realized by adding a negative output function to a power supply section having a drive power supply for a MOSFET as a switching element. , The secondary side of the photocoupler is connected to the GS terminal of the MOSFET using a normally-on junction type FET and a photocoupler. Regardless, after the drive power supply has risen sufficiently, the MOSFET is turned on when the voltage of the AC power supply is 0 V, and it has an overcurrent detection function for the inrush current of the incandescent lamp. Until the power is stabilized, the ON width is limited so that the current flowing through the MOSFET does not exceed the rated value regardless of the ON command width of the control signal.

【0009】請求項3の発明では、負荷とスイッチング
素子であるMOSFETの間に接点を接続したノーマリ
ーオンリレーを用いた構成をとっており、起動時の0V
投入をノーマリーオンリレーでおこない、駆動電源部の
出力電圧の比較を必要としない構成を特徴としており装
置起動時は点灯信号のタイミングに関わらず、駆動電源
が十分に上がった後、交流電源の電圧が0V時にMOS
FETをオンさせて、かつ白熱灯の突入電流に対しては
過電流検出機能を持ち、フィラメントが十分に温まり電
流が安定するまで、制御信号のオン指令幅に関わらずM
OSFETに流れる電流が定格以上にならないようにオ
ン幅を制限することを特徴としている。
According to a third aspect of the present invention, a normally-on relay having a contact connected between a load and a MOSFET serving as a switching element is used, and 0V at the time of startup is used.
It is turned on by a normally-on relay, and does not require comparison of the output voltage of the drive power supply.When the device is started, regardless of the timing of the lighting signal, after the drive power has risen sufficiently, the AC power MOS when voltage is 0V
It has an overcurrent detection function for turning on the FET and detecting the inrush current of the incandescent lamp. Until the filament warms sufficiently and the current stabilizes, M
It is characterized in that the ON width is limited so that the current flowing through the OSFET does not exceed the rating.

【0010】[0010]

【発明の実施の形態】以下、本発明の第1の実施の形態
を図1及び図2に、第2の実施の形態を図3及び図4
に、第3の実施の形態を図5及び図6に基づいて詳細に
説明する。
1 and 2 show a first embodiment of the present invention, and FIGS. 3 and 4 show a second embodiment of the present invention.
Next, a third embodiment will be described in detail with reference to FIGS.

【0011】[第1の実施の形態]図1は逆位相制御調
光器と交流電源と白熱灯負荷との配線図である。また図
2は上記逆位相制御調光器の回路動作のタイミングチャ
ートである。図1に示される逆位相制御調光器、はメイ
ンスイッチであるMOSFETを正負用それぞれ一個ず
つ備えたMOSFET部1と、該MOSFET部1を駆
動させるための駆動電源部2と、カレントトランスCA
と全波整流回路DB等によりMOSFETQ1、Q2に
流れるドレイン電流を電圧として検出する電流検出部4
と、該電流検出部からの出力を監視する第1の比較回路
であるコンパレータCP1と前記駆動電源部2からの出
力を監視する第2の比較回路であるコンパレータCP2
とから成る比較回路部5と、前記交流電源Eの出力電圧
の0V時点を検出する0V検出回路3と、過電流及びス
イッチイング素子駆動電圧不足信号が比較回路部5に発
せられると前記交流電源E電圧が、0Vの時点までL出
力を維持するラッチ回路7と、該ラッチ回路7から入力
にH信号をうけるまでは前記MOSFET部1のMOS
FETQ1,Q2のG−S間を短絡して、MOSFET
Q1,Q2をオフ状態にするノーマリーオン光結合型半
導体リレー6を主要構成としている。
FIG. 1 is a wiring diagram of an antiphase control dimmer, an AC power supply, and an incandescent lamp load. FIG. 2 is a timing chart of the circuit operation of the above-described anti-phase control dimmer. The anti-phase control dimmer shown in FIG. 1 includes a MOSFET section 1 having one main switch MOSFET for each of positive and negative, a drive power supply section 2 for driving the MOSFET section 1, and a current transformer CA.
Current detecting unit 4 for detecting the drain current flowing through MOSFETs Q1 and Q2 as a voltage by a full-wave rectifier circuit DB and the like
A comparator CP1 as a first comparison circuit for monitoring an output from the current detection unit and a comparator CP2 as a second comparison circuit for monitoring an output from the drive power supply unit 2.
A 0 V detection circuit 3 for detecting the point of time 0 V of the output voltage of the AC power supply E; and when an overcurrent and switching element drive voltage shortage signal is issued to the comparison circuit 5, the AC power supply A latch circuit 7 for maintaining the L output until the E voltage becomes 0V, and a MOS circuit of the MOSFET unit 1 until the H signal is received from the latch circuit 7 as an input.
Short-circuit GS between FET Q1 and Q2, MOSFET
A normally-on optically coupled semiconductor relay 6 for turning off Q1 and Q2 is a main component.

【0012】Tr1は制御信号を受けると前記交流電源
Eに応じて、逆位相動作で前記MOSFETQ1、Q2
を制御する。装置の起動時は、制御信号や前記駆動電源
部2の出力の状態に関わらず前記光結合型半導体リレー
6により前記MOSFET部1のMOSFETQ1、Q
2のG-S間は短絡されて、前記MOSFETQ1、Q
2はオフのままである。前記ラッチ回路7は、前記比較
回路部5からのL出力を受けるとH信号を出力し、前記
0V検出回路3が0V信号を出すまでその出力を維持し
続ける動作をする。従って前記駆動電源部2の出力電圧
が十分に上がった後、前記交流電源Eの電圧が0V地点
に達すると前記比較回路部5からのL出力により前記ノ
ーマリーオン光結合型半導体リレー6の駆動部にラッチ
回路7からH信号が送られ、前記ノーマリーオン光結合
型半導体リレー6はオフすることになり、前記MOSF
ET部1のMOSFETQ1、Q2のG-S間は短絡さ
れずに、Tr1は制御信号に応じて動作し、前記MOS
FETQ1、Q2のオン・オフの逆位相制御が可能とな
る。
When Tr1 receives the control signal, the MOSFETs Q1 and Q2 operate in reverse phase according to the AC power supply E.
Control. When the device is started, the MOSFETs Q1, Q2 of the MOSFET unit 1 are controlled by the optically coupled semiconductor relay 6 regardless of the state of the control signal or the output of the drive power supply unit 2.
2 is short-circuited between the GS and the MOSFETs Q1, Q
2 remains off. The latch circuit 7 outputs an H signal when receiving the L output from the comparison circuit unit 5, and operates to keep the output until the 0V detection circuit 3 outputs the 0V signal. Accordingly, when the voltage of the AC power supply E reaches the 0V point after the output voltage of the drive power supply section 2 has sufficiently increased, the normally-on optically coupled semiconductor relay 6 is driven by the L output from the comparison circuit section 5. The H signal is sent from the latch circuit 7 to the section, and the normally-on optically-coupled semiconductor relay 6 is turned off.
The GS of the MOSFETs Q1 and Q2 of the ET unit 1 is not short-circuited, and Tr1 operates according to a control signal.
The opposite phase control of ON / OFF of the FETs Q1 and Q2 becomes possible.

【0013】0V時点から投入させてもフィラメントが
冷えている間は突入電流がおこる。この電流を前記電流
検出部4が検出し、その値を前記比較回路部5のCP1
がMOSFETQ1,Q2の定格以上と判断すると前記
ラッチ回路7は前記ノーマリーオン光結合型半導体リレ
ー6をL信号でオンし、前記MOSFET部1のMOS
FETQ1、Q2のG−S間を短絡して前記MOSFE
T部1をオフさせる。
[0013] Even when the filament is applied from the time of 0V, an inrush current occurs while the filament is cold. This current is detected by the current detection unit 4 and the value is detected by the CP1 of the comparison circuit unit 5.
When the latch circuit 7 determines that the current is higher than the ratings of the MOSFETs Q1 and Q2, the latch circuit 7 turns on the normally-on optically-coupled semiconductor relay 6 with an L signal,
Shorten the GS of the FETs Q1 and Q2 to
The T unit 1 is turned off.

【0014】再び0V時点から投入を始めるが、フィラ
メントが十分に温まっていなく電流が再び過電流状態を
起こすとMOSFETをオフさせる。
The supply is started again at the time of 0 V, but when the filament is not sufficiently heated and the current causes an overcurrent state again, the MOSFET is turned off.

【0015】この状態をフィラメントが十分に温まって
電流がMOSFETが破壊されない値まで制御信号に関
係なく数サイクル続ける。
This state is continued for several cycles irrespective of the control signal until the filament is sufficiently warmed and the current does not destroy the MOSFET.

【0016】このことによりフィラメントが十分に温ま
り電流が安定するまで、制御信号のオン指令幅に関わら
ずMOSFET部1に流れる電流が定格以上にならない
ようにオン幅を制限する動作を行う。
As a result, until the filament is sufficiently warmed and the current is stabilized, the ON width is limited so that the current flowing through the MOSFET unit 1 does not exceed the rated value regardless of the ON command width of the control signal.

【0017】[第2の実施の形態]図3は逆位相制御調
光器と交流電源と白熱灯負荷との配線図であるまた図4
は上記逆位相制御調光器の回路動作のタイミングチャー
トである。
[Second Embodiment] FIG. 3 is a wiring diagram of an anti-phase control dimmer, an AC power supply and an incandescent lamp load.
4 is a timing chart of the circuit operation of the above-described anti-phase control dimmer.

【0018】図3に示される位相制御装置はメインスイ
ッチであるMOSFETを正負用それぞれ一個ずつ備え
たMOSFET部1と、該MOSFET部1を駆動させ
るための駆動電源部2と、カレントトランスCAと整流
回路DB部等により前記MOSFET部1に流れるドレ
イン電流を電圧として検出する電流検出部4と、該電流
検出部からの出力を監視する第1の比較回路であるコン
パレータCP1と前記駆動電源部2からの出力を監視す
る第2の比較回路であるコンパレータCP2とから成る
比較回路部5と、前記交流電源Eの出力電圧の0V時点
を検出する0V検出回路3と、過電流及び素子駆動電圧
不足信号が比較回路5に発せられると前記交流電源Eの
出力電圧が0Vの時点までL出力を維持するラッチ回路
7と、前記駆動電源部2に倍電圧整流回路2aよりなる
正負電源を付加し、前記ラッチ回路7からの信号により
動作するノーマリーオン接合型FETと第1、第2のフ
ォトカプラとから成る制御部6を主要構成としている。
The phase control device shown in FIG. 3 has a MOSFET section 1 having one main switch MOSFET for each of positive and negative, a drive power supply section 2 for driving the MOSFET section 1, a current transformer CA and a rectifier. A current detection unit 4 for detecting a drain current flowing through the MOSFET unit 1 as a voltage by a circuit DB unit or the like, a comparator CP1 as a first comparison circuit for monitoring an output from the current detection unit, and the drive power supply unit 2. A comparison circuit unit 5 comprising a comparator CP2, which is a second comparison circuit for monitoring the output of the AC power supply; a 0V detection circuit 3 for detecting the 0V point in time of the output voltage of the AC power supply E; Is output to the comparison circuit 5, a latch circuit 7 that maintains the L output until the output voltage of the AC power supply E reaches 0 V, A main part of a control unit 6 comprising a normally-on junction type FET operated by a signal from the latch circuit 7 and first and second photocouplers, to which a positive / negative power supply comprising a voltage doubler rectifier circuit 2a is added to the unit 2 And

【0019】装置の起動時は、制御信号や前記駆動電源
部2の出力電圧の状態に関わらず前記制御部6のノーマ
リーオン接合型FETは第2のフォトカプラPC2にH
信号をラッチ回路7部からうけるまでは、第1のフォト
カプラPC1を導通させて前記MOSFET部1のMO
SFETQ1、Q2のGーS間を短絡して前記MOSF
ET部1をオフ状態とする。
At the time of starting the device, the normally-on junction type FET of the control unit 6 is connected to the second photocoupler PC2 regardless of the state of the control signal or the output voltage of the drive power supply unit 2.
Until a signal is received from the latch circuit 7, the first photocoupler PC 1 is made conductive and the MO
Short-circuit between GS of SFETs Q1 and Q2 and
The ET unit 1 is turned off.

【0020】ラッチ回路7は比較回路部5のL出力を受
けるとH信号を出力し、0V信号を出すまでその出力を
維持し続ける動作をするので、前記駆動電源部2の出力
電圧が十分に上がった後、前記交流電源Eの出力電圧が
0V地点に達すると前記制御部6の第2のフォトカプラ
PC2の1次側に前記ラッチ回路7よりH信号が送ら
れ、これにより前記制御部6のノーマリーオン接合型F
ETがオフされるので、前記制御部6の第1のフォトカ
プラPC1もオフされ前記MOSFET部1は制御信号
に応じたオン・オフの逆位相制御が可能になる。
When the latch circuit 7 receives the L output of the comparison circuit section 5, it outputs an H signal and operates to maintain the output until a 0V signal is output. Therefore, the output voltage of the drive power supply section 2 is sufficiently high. After the rise, when the output voltage of the AC power supply E reaches the 0V point, an H signal is sent from the latch circuit 7 to the primary side of the second photocoupler PC2 of the control unit 6, whereby the control unit 6 Normally-on junction type F
Since the ET is turned off, the first photocoupler PC1 of the control unit 6 is also turned off, and the MOSFET unit 1 can perform on / off reverse phase control according to a control signal.

【0021】0V時点から投入させてもフィラメントが
冷えている間は突入電流がおこる。この電流を前記電流
検出回部4が検出し、その値をMOSFETQ1,Q2
の定格以上と判断すると前記ラッチ回路7が次の0V時
点を検出するまでL信号を出力するので、制御部6のノ
ーマリーオン接合型FETと制御部6の第1のフォトカ
プラPC1はオンし前記MOSFET部1のMOSFE
TQ1、Q2のG−S間を短絡して前記MOSFET部
1をオフさせる。
Even when the filament is turned on at 0 V, an inrush current occurs while the filament is cold. This current is detected by the current detecting circuit 4, and the value is detected by the MOSFETs Q1 and Q2.
When the latch circuit 7 determines that the current is equal to or higher than the rated value, the L signal is output until the latch circuit 7 detects the next 0V point. Therefore, the normally-on junction type FET of the control unit 6 and the first photocoupler PC1 of the control unit 6 are turned on. MOSFE of the MOSFET section 1
The GS of TQ1 and Q2 is short-circuited to turn off the MOSFET section 1.

【0022】再び0V時点から投入を始めるが、フィラ
メントが十分に温まっていなく電流が再び過電流状態を
起こすとMOSFETをオフさせる。
The supply is started again at the time of 0 V, but when the filament is not sufficiently heated and the current causes an overcurrent state again, the MOSFET is turned off.

【0023】この状態をフィラメントが十分に温まって
電流がMOSFETが破壊されない値まで制御信号に関
係なく数サイクル続ける。
This state is continued for several cycles irrespective of the control signal until the filament is sufficiently warmed and the current does not destroy the MOSFET.

【0024】このことによりフィラメントが十分に温ま
り電流が安定するまで、制御信号のオン指令幅に関わら
ずMOSFETに流れる電流が一定以上にならないよう
にオン幅を制限する動作を行う。
As a result, until the filament is sufficiently warmed and the current is stabilized, the operation of limiting the ON width is performed so that the current flowing through the MOSFET does not exceed a predetermined value regardless of the ON command width of the control signal.

【0025】[第3の実施の形態]図5は逆位相制御調
光器と交流電源と白熱灯負荷との配線図であるまた図6
上記逆位相制御調光器の回路動作のタイミングチャート
である。図5に示される位相制御装置はメインスイッチ
であるMOSFETを正負用それぞれ一個ずつ備えたM
OSFET部1と、該MOSFET部1を駆動させるた
めの駆動電源部2と、カレントトランスCAと整流回路
DB等により前記MOSFET部1のMOSFETQ
1、Q2に流れるドレイン電流を電圧として検出する電
流検出部4と、該電流検出部4からの出力を監視するC
P2から成る比較回路部5と、前記交流電源Eの出力電
圧の0V時点を検出する0V検出回路3と、過電流信号
が前記比較回路5に発せられると前記交流電源Eの出力
電圧が0Vの時点までL信号を出しつづけて、ノーマリ
ーオンリレーをオンさせ、それ以外の時はH信号を出力
するラッチ回路7部と、駆動コイルをMOSFETと同
じ駆動電源部より供給し、ラッチ回路7がH信号をPC
1の1次側に入力するまでMOSFETのG−S間を短
絡してMOSFETをオフさせるB接点のリレーPC1
とを主要構成としている。
[Third Embodiment] FIG. 5 is a wiring diagram of an anti-phase control dimmer, an AC power supply, and an incandescent lamp load.
It is a timing chart of the circuit operation of the above-mentioned opposite phase control dimmer. The phase control device shown in FIG.
An OSFET section 1, a drive power supply section 2 for driving the MOSFET section 1, a MOSFET Q of the MOSFET section 1 by a current transformer CA, a rectifier circuit DB, and the like.
1, a current detection unit 4 for detecting a drain current flowing through Q2 as a voltage, and a C for monitoring an output from the current detection unit 4
A comparison circuit section 5 composed of P2; a 0V detection circuit 3 for detecting a point of time of 0V of the output voltage of the AC power supply E; and an output voltage of the AC power supply E of 0 V when an overcurrent signal is issued to the comparison circuit 5. The L signal is continuously output until the time point, the normally-on relay is turned on, and at other times, the latch circuit 7 for outputting the H signal and the drive coil are supplied from the same drive power supply as the MOSFET, and the latch circuit 7 H signal to PC
B-contact relay PC1 that turns off the MOSFET by short-circuiting the GS of the MOSFET until the signal is input to the primary side of the relay PC1
And the main configuration.

【0026】ここで、制御部6のノーマリーオンリレー
Ry1の駆動電流は駆動電源部2の出力電圧が十分に上
がらないと制御部6のフォトカプラPC1がオンしても
リレー接点をオフできないものを選定する。
Here, the drive current of the normally-on relay Ry1 of the control section 6 cannot be turned off even if the photocoupler PC1 of the control section 6 is turned on unless the output voltage of the drive power supply section 2 is sufficiently increased. Is selected.

【0027】装置の起動時は制御信号や前記駆動電源部
2の状態に関わらずノーマリーオンリレーRy1がMO
SFETのG−Sを短絡させるためMOSFETはオ
フ、ラッチ回路7は比較回路部5のH出力を受けるとP
C1の2次側を介してノーマリーオンリレーRy1の駆
動コイルに電流を流してリレーをオフし、MOSFET
は制御信号に応じたオン・オフの逆位相制御が可能にな
る。
When the device is started, the normally-on relay Ry1 is set to the MO state regardless of the control signal and the state of the drive power supply unit 2.
The MOSFET is turned off to short-circuit the GS of the SFET, and when the latch circuit 7 receives the H output of the comparison
A current is applied to the drive coil of the normally-on relay Ry1 via the secondary side of C1 to turn off the relay, and the MOSFET is turned off.
Enables the on / off antiphase control according to the control signal.

【0028】但し、この時駆動電源部2の出力電圧が十
分に上がらないと前記制御部6のフォトカプラPC1
が、前記ラッチ回路7からのH信号でオンしても前記制
御部6のノーマリーオンリレーRy1は、コイルへの供
給電流が足りなくて出力接点をオフできない。前記制御
部6のノーマリーオンリレーRy1をオフさせ、投入さ
せてもフィラメントが冷えている間は突入電流がおこ
る。この電流を電流検出部4が検出し、その値をMOS
FETQ、1Q2の定格以上と前記比較回路部5のCP
2が判断すると前記ラッチ回路7が次の0V時点を検出
するまでL信号を出力するので、前記制御部6のフォト
カプラPC1はオフして前記制御部6のノーマリーオン
リレーRy1は前記MOSFET部1のMOSFETQ
1、Q2のG−S間を短絡して前記MOSFET部1を
オフさせる。
However, at this time, if the output voltage of the drive power supply unit 2 does not rise sufficiently, the photocoupler PC1 of the control unit 6
However, the normally-on relay Ry1 of the control unit 6 cannot turn off the output contact because the supply current to the coil is insufficient even if the signal is turned on by the H signal from the latch circuit 7. Even when the normally-on relay Ry1 of the control unit 6 is turned off and turned on, an inrush current occurs while the filament is cold. This current is detected by the current detector 4 and the value is
The rating of the FET Q, 1Q2 or more and the CP of the comparison circuit unit 5
2, the L signal is output until the latch circuit 7 detects the next 0V point, so that the photocoupler PC1 of the control unit 6 is turned off and the normally-on relay Ry1 of the control unit 6 is connected to the MOSFET unit. 1 MOSFET Q
1, the GS of Q2 is short-circuited to turn off the MOSFET section 1.

【0029】再び0V時点からは投入を始めるが、フィ
ラメントが十分に温まっていなく電流が再び過電流状態
を起こすとMOSFETをオフさせる。
The supply is started again from 0 V, but when the filament is not sufficiently heated and the current causes an overcurrent state again, the MOSFET is turned off.

【0030】この状態をフィラメントが十分に温まって
電流がMOSFETが破壊されない値まで制御信号に関
係なく数サイクル続ける。
This state is continued for several cycles irrespective of the control signal until the filament is sufficiently warmed and the current does not destroy the MOSFET.

【0031】このことによりフィラメントが十分に温ま
り電流が安定するまで、制御信号のオン指令幅に関わら
ずMOSFETに流れる電流が一定以上にならないよう
にオン幅を制限する動作を行う。
As a result, until the filament is sufficiently warmed and the current is stabilized, the operation of limiting the ON width is performed so that the current flowing through the MOSFET does not exceed a certain value regardless of the ON command width of the control signal.

【0032】[0032]

【発明の効果】以上説明したように請求項1の発明にあ
っては、ノーマリーオン光結合型半導体リレーとラッチ
回路と0V検出回路により点灯信号のタイミングに関わ
らずスイッチング素子駆動電源の出力電圧が十分にあが
った後交流電源が0Vの時点でオンさせ、逆位相制御動
作で必ず電流は0Aからサインカーブで立ち上がらせ、
且つ白熱灯のフィラメントが十分に温まり電流が安定す
るまで制御信号のオン指令幅に関わらずMOSFETに
流れる電流が定格以上にならないようにオン幅を制限す
る出来るので、いかなる場合もMOSFETには定格以
上の電流は流れない。このことにより、従来のMOSF
ET位相制御調光器より大きな負荷定格を設定すること
ができると言う効果を奏する。
As described above, according to the first aspect of the present invention, the normally-on optically-coupled semiconductor relay, the latch circuit, and the 0V detection circuit enable the output voltage of the switching element drive power supply regardless of the timing of the lighting signal. Is fully turned on when the AC power supply is at 0V, and the current always rises from 0A in a sine curve by the reverse phase control operation.
In addition, the ON width can be limited so that the current flowing through the MOSFET does not exceed the rating regardless of the ON command width of the control signal until the filament of the incandescent lamp sufficiently warms and the current stabilizes. Does not flow. This allows the conventional MOSF
There is an effect that a load rating larger than that of the ET phase control dimmer can be set.

【0033】請求項2の発明にあっては、請求項1記載
のMOSFET逆位相制御調光器のノーマリーオン光結
合型半導体リレーの動作を、スイッチング素子の駆動電
源に負出力機能を追加し、ノーマリーオンの接合型FE
Tとフォトカプラにより実現し点灯信号のタイミングに
関わらず素子駆動電源の出力電圧が十分に上がるまでフ
ォトカプラでMOSFETをオフさせておくので、請求
項1同様に、従来のMOSFET位相制御調光器より大
きな負荷定格を設定することができると言う効果を奏す
る。
According to a second aspect of the present invention, the operation of the normally-on optically-coupled semiconductor relay of the MOSFET reverse-phase control dimmer according to the first aspect is provided by adding a negative output function to the driving power supply of the switching element. , Normally-on junction type FE
Since the MOSFET is turned off by the photocoupler until the output voltage of the element driving power supply is sufficiently increased regardless of the timing of the lighting signal and realized by the T and the photocoupler, the conventional MOSFET phase control dimmer as in claim 1 There is an effect that a larger load rating can be set.

【0034】請求項3の発明にあっては、ノーマリーオ
ンリレーの接点をMOSFETのG−S端子挿入し、交
流電源電圧が0Vの時点でノーマリーオンリレーの接点
をオンさせる。この時、MOSFETの駆動電源をノー
マリーオンリレーの駆動電源にも使い、出力電圧が十分
に上がらないとノーマリーオンリレーをオンできないよ
うにするので駆動電源電圧比較器は不要となり、請求項
1及び2に比べ簡素な構成で従来のMOSFET位相制
御調光器より大きな負荷定格を設定することができると
言う効果を奏する。
According to the third aspect of the present invention, the contact of the normally-on relay is inserted into the GS terminal of the MOSFET, and the contact of the normally-on relay is turned on when the AC power supply voltage is 0V. At this time, the drive power supply for the MOSFET is also used as the drive power supply for the normally-on relay, so that the normally-on relay cannot be turned on unless the output voltage is sufficiently increased. And 2, a load rating larger than that of the conventional MOSFET phase control dimmer can be set with a simpler configuration.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の第1の実施の形態に係る逆位相制御調
光器と交流電源と白熱灯負荷との配線図である。
FIG. 1 is a wiring diagram of an anti-phase control dimmer, an AC power supply, and an incandescent lamp load according to a first embodiment of the present invention.

【図2】上記逆位相制御調光器の回路動作のタイミング
チャートである。
FIG. 2 is a timing chart of a circuit operation of the anti-phase control dimmer.

【図3】本発明の第2の実施の形態に係る逆位相制御調
光器と交流電源と白熱灯負荷との配線図である
FIG. 3 is a wiring diagram of an antiphase control dimmer, an AC power supply, and an incandescent lamp load according to a second embodiment of the present invention.

【図4】上記逆位相制御調光器の回路動作のタイミング
チャートである。
FIG. 4 is a timing chart of a circuit operation of the anti-phase control dimmer.

【図5】本発明の第3の実施の形態に係る逆位相制御調
光器と交流電源と白熱灯負荷との配線図である
FIG. 5 is a wiring diagram of an anti-phase control dimmer, an AC power supply, and an incandescent lamp load according to a third embodiment of the present invention.

【図6】上記逆位相制御調光器の回路動作のタイミング
チャートである。
FIG. 6 is a timing chart of a circuit operation of the anti-phase control dimmer.

【図7】従来の位相制御動作が可能な位相制御調光器と
交流電源と負荷との配線図である。
FIG. 7 is a wiring diagram of a conventional phase control dimmer capable of performing a phase control operation, an AC power supply, and a load.

【図8】従来のMOSFET等をスイッチ素子に用いた
逆位相制御動作が可能な位相制御調光器と交流電源と負
荷との配線図である。
FIG. 8 is a wiring diagram of a conventional phase control dimmer capable of performing an inverse phase control operation using a MOSFET or the like as a switch element, an AC power supply, and a load.

【符号の説明】[Explanation of symbols]

1 MOSFET部 2 駆動電源部 3 0V検出回路 4 電流検出部 5 比較回路部 6 制御部 7 ラッチ回路 E 交流電源 Q1 MOSFET Q2 MOSFET L 白熱灯負荷 PC1 フォトカプラ PC2 フォトカプラ PRy1 ノーマリーオン光結合型半導体リレー Ry1 ノーマリーオンリレー FET ノーマリーオン接合型FET CA カレントトランス DB 整流回路 DESCRIPTION OF SYMBOLS 1 MOSFET part 2 Drive power supply part 30V detection circuit 4 Current detection part 5 Comparison circuit part 6 Control part 7 Latch circuit E AC power supply Q1 MOSFET Q2 MOSFET L Incandescent lamp load PC1 Photocoupler PC2 Photocoupler PRy1 Normally-on optically coupled semiconductor Relay Ry1 normally-on relay FET normally-on junction type FET CA current transformer DB rectifier circuit

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 交流電源に対して直列且つ逆方向に接続
した2つのMOSFETを有するMOSFET部と該M
OSFET部を駆動するための駆動電源部を有し、前記
MOSFET部により前記交流電源を逆位相制御するこ
とで、白熱灯負荷に供給する電力を制御する逆位相制御
調光器において、前記交流電源のゼロクロス点を検出す
る0V検出回路と、前記MOSFET部の2つのMOS
FETに流れるドレイン電流を電圧として検出する電流
検出部と、該電流検出部からの出力を監視する第1の比
較回路と前記駆動電源部の出力を監視する第2の比較回
路とから成る比較回路部と、前記MOSFET部の2つ
のMOSFETのG−S端子に出力側を接続したノーマ
リーオン光結合型半導体リレーと、前記比較回路部及び
0V検出回路それぞれの信号に応じて前記ノーマリーオ
ン光結合型半導体リレーを動作させるラッチ回路とを設
け、装置の起動時は制御信号のタイミングには関わら
ず、前記駆動電源の出力電圧が所定値まで十分に上がっ
た後、前記交流電源の電圧が0V地点に達するまで、M
OSFET部の2つのMOSFETのG-S間をノーマ
リーオン光結合型半導体リレーで短絡してオンさせず
に、且つ前記白熱灯負荷の突入電流に対しては、フィラ
メントが十分に温まり電流が安定するまでは、前記交流
電源に同期した制御信号のオン指令幅に関わらず前記M
OSFET部に流れる電流が、所定値以上にならないよ
うに過電流のオン幅を制限することを特徴とするMOS
FET逆位相制御調光器。
A MOSFET section having two MOSFETs connected in series and in opposite directions to an AC power supply;
An anti-phase control dimmer having a drive power supply unit for driving an OSFET unit and controlling the power supplied to the incandescent lamp load by controlling the phase of the AC power supply by the MOSFET unit, 0V detection circuit for detecting the zero cross point of
A comparison circuit comprising: a current detection unit that detects a drain current flowing through an FET as a voltage; a first comparison circuit that monitors an output from the current detection unit; and a second comparison circuit that monitors an output of the drive power supply unit Unit, a normally-on optically coupled semiconductor relay having an output connected to the GS terminal of two MOSFETs of the MOSFET unit, and the normally-on optically-coupled semiconductor relay according to signals of the comparison circuit unit and the 0 V detection circuit. And a latch circuit for operating the coupled semiconductor relay. When the device is started, regardless of the timing of the control signal, after the output voltage of the drive power supply sufficiently rises to a predetermined value, the voltage of the AC power supply becomes 0V. M until you reach the point
The short circuit between the GS of the two MOSFETs in the OSFET section with a normally-on optically coupled semiconductor relay does not cause the MOSFET to be turned on. Until the above, the M signal is applied regardless of the ON command width of the control signal synchronized with the AC power supply.
A MOS characterized in that an ON width of an overcurrent is limited so that a current flowing through an OSFET section does not exceed a predetermined value.
FET anti-phase control dimmer.
【請求項2】 交流電源に対して、直列且つ逆方向に接
続した2つのMOSFETを有するMOSFET部と該
MOSFET部を駆動するための電源等を有する電源部
を内蔵し、前記MOSFET部により前記交流電源を逆
位相制御することで、白熱灯負荷に供給する電力を制御
する逆位相制御調光器において、前記交流電源のゼロク
ロス点を検出する0V検出回路と、前記MOSFET部
の2つのMOSFETに流れるドレイン電流を電圧とし
て検出する電流検出回路と、該電流検出部からの出力を
監視する第1の比較回路と前記駆動電源部の出力を監視
する第2の比較回路とから成る比較回路部と、前記MO
SFET部の2つのMOSFETのG−S端子に出力側
を接続した第1のフォトカプラとノーマリーオンの接合
型FET及び第2のフォトカプラとから成る制御部と、
該制御部を駆動させるために前記電源部に負出力機能を
付加し、前記比較回路部及び0V検出回路それぞれの信
号に応じて、前記制御部を動作させるラッチ回路とを設
け、装置の起動時は制御信号のタイミングには関わら
ず、前記駆動電源が所定値まで十分に上がった後、前記
交流電源の電圧が0V地点に達するまで前記MOSFE
T部の2つのMOSFETのG-S間を前記制御部の第
1のフォトカプラで短絡してオンさせずに、かつ白熱灯
負荷の突入電流に対しては、フィラメントが十分に温ま
り電流が安定するまでは制御信号のオン指令幅に関わら
ず前記MOSFET部に流れる電流が、所定値以上にな
らないように過電流のオン幅を制限することを特徴とす
るMOSFET逆位相制御調光器。
2. An AC power supply includes a built-in MOSFET section having two MOSFETs connected in series and in opposite directions, and a power supply section having a power supply for driving the MOSFET section and the like. In a reverse phase control dimmer that controls the power supplied to the incandescent lamp load by controlling the phase of the power supply, a 0 V detection circuit that detects a zero cross point of the AC power supply and two MOSFETs of the MOSFET section. A current detection circuit that detects a drain current as a voltage, a comparison circuit unit including a first comparison circuit that monitors an output from the current detection unit, and a second comparison circuit that monitors an output of the drive power supply unit; The MO
A control unit including a first photocoupler having an output side connected to the GS terminals of two MOSFETs of the SFET unit, a normally-on junction type FET, and a second photocoupler;
A negative output function added to the power supply unit to drive the control unit; and a latch circuit for operating the control unit in accordance with signals from the comparison circuit unit and the 0 V detection circuit. Irrespective of the timing of the control signal, after the driving power supply has sufficiently risen to a predetermined value, the MOSFE until the voltage of the AC power supply reaches the 0V point.
The first and second photocouplers of the control section short-circuit the GS of the two MOSFETs in the T section so that they do not turn on, and the inrush current of the incandescent lamp load sufficiently heats the filament to stabilize the current. A MOSFET reverse-phase control dimmer, wherein the ON width of the overcurrent is limited so that the current flowing through the MOSFET unit does not exceed a predetermined value regardless of the ON command width of the control signal.
【請求項3】 交流電源に対して直列且つ逆方向に接続
した2つのMOSFETを有するMOSFET部と該M
OSFET部を駆動するための電源等を内蔵し、前記M
OSFET部により前記交流電源を逆位相制御すること
で、白熱灯負荷に供給する電力を制御する逆位相制御調
光器において、単相交流電源のゼロクロス点を検出する
0V検出回路と、前記MOSFET部の2つのMOSF
ETに流れるドレイン電流を電圧として検出する電流検
出部と、該電流検出部からの出力を監視する比較回路部
と、前記MOSFET部の2つのMOSFETのG−S
端子に出力側を接続したノーマリーオンリレーとフォト
カプラから成る制御部と、前記比較回路部及び0V検出
回路それぞれの信号に応じて前記制御部を動作させるラ
ッチ回路とを設け、装置の起動時は制御信号のタイミン
グには関わらず、前記駆動電源部の出力電圧が所定値ま
で十分に上がった後、前記交流電源の電圧が0V地点で
前記ノーマリーオンリレーにより投入し、白熱灯の突入
電流に対しては、フィラメントが十分に温まり電流が安
定するまで制御信号のオン指令幅に関わらず前記MOS
FET部に流れる電流が、所定値以上にならないように
過電流のオン幅を制限することを特徴とするMOSFE
T逆位相制御調光器。
3. A MOSFET section having two MOSFETs connected in series and in opposite directions to an AC power supply, and
A power supply for driving the OSFET section is built in, and the M
A 0 V detection circuit for detecting a zero-crossing point of a single-phase AC power supply in an anti-phase control dimmer for controlling power supplied to an incandescent lamp load by controlling the phase of the AC power supply by an OSFET section; Two MOSFs
A current detection unit for detecting a drain current flowing through the ET as a voltage; a comparison circuit unit for monitoring an output from the current detection unit; and a GS of two MOSFETs of the MOSFET unit
A control unit comprising a normally-on relay having a terminal connected to the output side and a photocoupler, and a latch circuit for operating the control unit in accordance with the signals of the comparison circuit unit and the 0 V detection circuit, respectively. Irrespective of the timing of the control signal, after the output voltage of the drive power supply section has sufficiently risen to a predetermined value, the voltage of the AC power supply is turned on by the normally-on relay at the point of 0 V, and the inrush current of the incandescent lamp In contrast to the above, the MOS is used regardless of the ON command width of the control signal until the filament is sufficiently warmed and the current is stabilized.
MOSFE characterized in that the ON width of the overcurrent is limited so that the current flowing through the FET section does not exceed a predetermined value.
T antiphase control dimmer.
JP27672998A 1998-09-30 1998-09-30 Mosfet antiphase control dimmer Pending JP2000106285A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP27672998A JP2000106285A (en) 1998-09-30 1998-09-30 Mosfet antiphase control dimmer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27672998A JP2000106285A (en) 1998-09-30 1998-09-30 Mosfet antiphase control dimmer

Publications (1)

Publication Number Publication Date
JP2000106285A true JP2000106285A (en) 2000-04-11

Family

ID=17573536

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27672998A Pending JP2000106285A (en) 1998-09-30 1998-09-30 Mosfet antiphase control dimmer

Country Status (1)

Country Link
JP (1) JP2000106285A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008159468A (en) * 2006-12-25 2008-07-10 Matsushita Electric Works Ltd Dimmer device
JP2008234587A (en) * 2007-03-23 2008-10-02 Matsushita Electric Works Ltd Power control device
US8488617B2 (en) 2007-03-20 2013-07-16 Mitsubishi Electric Corporation Railway-train communication apparatus
JP2013251189A (en) * 2012-06-01 2013-12-12 Jimbo Electric Co Ltd Dimmer

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008159468A (en) * 2006-12-25 2008-07-10 Matsushita Electric Works Ltd Dimmer device
US8488617B2 (en) 2007-03-20 2013-07-16 Mitsubishi Electric Corporation Railway-train communication apparatus
JP2008234587A (en) * 2007-03-23 2008-10-02 Matsushita Electric Works Ltd Power control device
JP2013251189A (en) * 2012-06-01 2013-12-12 Jimbo Electric Co Ltd Dimmer

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