JP2000091549A5 - Solid-state image sensor and its manufacturing method - Google Patents
Solid-state image sensor and its manufacturing method Download PDFInfo
- Publication number
- JP2000091549A5 JP2000091549A5 JP1998262009A JP26200998A JP2000091549A5 JP 2000091549 A5 JP2000091549 A5 JP 2000091549A5 JP 1998262009 A JP1998262009 A JP 1998262009A JP 26200998 A JP26200998 A JP 26200998A JP 2000091549 A5 JP2000091549 A5 JP 2000091549A5
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- JP
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- Prior art keywords
- resin layer
- transparent resin
- semiconductor substrate
- heating
- solid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000011347 resin Substances 0.000 claims description 36
- 229920005989 resin Polymers 0.000 claims description 36
- 239000004065 semiconductor Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 11
- 238000003384 imaging method Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 6
- 230000001678 irradiating effect Effects 0.000 claims description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
Description
【０００１】
【発明の属する技術分野】
本発明は、オンチップレンズを有する固体撮像装置およびその製造方法に関する。
[0001]
[Technical field to which the invention belongs]
The present invention relates to a solid-state image sensor having an on-chip lens and a method for manufacturing the same.
そこで、本発明は、高温・高湿等の過酷な条件下においても、配線アルミの腐食等を起こすことなく、またオンチップマイクロレンズにクラックが入ることのない優れた耐久性を有するオンチップマイクロレンズを有する固体撮像装置およびその製造方法を提供することを目的とする。 Therefore, the present invention has an on-chip micro that has excellent durability so that the wiring aluminum does not corrode and the on-chip microlens does not crack even under harsh conditions such as high temperature and high humidity. An object of the present invention is to provide a solid-state image sensor having a lens and a method for manufacturing the same.
【００１１】
【課題を解決するための手段】
本発明は、上記課題を達成すべく、受光部および電荷転送部を有する半導体基板上に、ネガ型の感光性樹脂からなる透明樹脂層を形成する工程と、前記透明樹脂層上に、ポジ型の感光性樹脂からなる感光性樹脂層を形成する工程と、前記感光性樹脂層を露光して、前記感光性樹脂層に前記受光部に対応するパターンを形成する工程と、前記パターンを前記透明樹脂層に転写する工程と、前記半導体基板を加熱しつつ、前記透明樹脂層を紫外線照射処理する工程とにより形成された固体撮像装置を提供する。
0011
[Means for solving problems]
In the present invention, in order to achieve the above problems, a step of forming a transparent resin layer made of a negative type photosensitive resin on a semiconductor substrate having a light receiving part and a charge transfer part, and a positive type on the transparent resin layer. A step of forming a photosensitive resin layer made of the photosensitive resin of the above, a step of exposing the photosensitive resin layer to form a pattern corresponding to the light receiving portion on the photosensitive resin layer, and a step of forming the pattern corresponding to the light receiving portion, and making the pattern transparent. Provided is a solid-state imaging apparatus formed by a step of transferring to a resin layer and a step of irradiating the transparent resin layer with ultraviolet rays while heating the semiconductor substrate.
【００５５】
【発明の効果】
以上説明したように、本発明のオンチップレンズを有する固体撮像装置およびその製造方法によれば、オンチップマイクロレンズを構成する透明樹脂から塩素分が完全に除去されており、アルミニウム配線を腐食したり、塩素分が残存するために生じる不完全重合に起因するクラックの発生等のない、耐久性に優れたオンチップレンズを有する固体撮像装置を得ることができる。
0055
【Effect of the invention】
As described above, according to the solid-state image sensor having the on-chip lens of the present invention and the manufacturing method thereof, chlorine is completely removed from the transparent resin constituting the on-chip microlens, and the aluminum wiring is corroded. or, it is possible to obtain a solid-state imaging device having no occurrence of cracks due to incomplete polymerization occurs to chlorine remains, on-chip lens having excellent durability.
Claims (6)
前記透明樹脂層上に、ポジ型の感光性樹脂からなる感光性樹脂層を形成する工程と、
前記感光性樹脂層を露光して、前記感光性樹脂層に前記受光部に対応するパターンを形成する工程と、
前記パターンを前記透明樹脂層に転写する工程と、
前記半導体基板を加熱しつつ、前記透明樹脂層を紫外線照射処理する工程を有する、
固体撮像装置の製造方法。Forming a transparent resin layer made of a negative photosensitive resin on a semiconductor substrate having a light receiving portion and a charge transfer portion;
Forming a photosensitive resin layer made of a positive photosensitive resin on the transparent resin layer;
Exposing the photosensitive resin layer to form a pattern corresponding to the light receiving portion on the photosensitive resin layer; and
Transferring the pattern to the transparent resin layer;
A step of subjecting the transparent resin layer to ultraviolet irradiation treatment while heating the semiconductor substrate;
Manufacturing method of solid-state imaging device.
前記半導体基板を加熱しつつ、前記透明樹脂層を、１０ｍｊ／ｃｍ2 〜５００ｍｊ／ｃｍ2 のエネルギーの紫外線を照射処理する工程である、
請求項１記載の固体撮像装置の製造方法。The step of subjecting the transparent resin layer to ultraviolet irradiation treatment while heating the semiconductor substrate,
Wherein while heating the semiconductor substrate, the transparent resin layer is a step of irradiation treatment energy ultraviolet of 10mj / cm 2 ~500mj / cm 2 ,
A method for manufacturing a solid-state imaging device according to claim 1 .
前記半導体基板を加熱しつつ、前記透明樹脂層を、３２０ｎｍ以下の波長の光を含有する紫外線を照射処理する工程である、
請求項１記載の固体撮像装置の製造方法。The step of subjecting the transparent resin layer to ultraviolet irradiation treatment while heating the semiconductor substrate,
The step of irradiating the transparent resin layer with ultraviolet light containing light having a wavelength of 320 nm or less while heating the semiconductor substrate.
A method for manufacturing a solid-state imaging device according to claim 1 .
前記半導体基板を１００〜２００℃に加熱しつつ、前記透明樹脂層を紫外線照射処理する工程である、
請求項１記載の固体撮像装置の製造方法。The step of subjecting the transparent resin layer to ultraviolet irradiation treatment while heating the semiconductor substrate,
The step of subjecting the transparent resin layer to ultraviolet irradiation treatment while heating the semiconductor substrate to 100 to 200 ° C.,
A method for manufacturing a solid-state imaging device according to claim 1 .
前記半導体基板を１００〜２００℃に加熱しつつ、前記透明樹脂層を、１０ｍｊ／ｃｍ2 〜５００ｍｊ／ｃｍ2 のエネルギーの紫外線を照射処理する工程である、
請求項１記載の固体撮像装置の製造方法。The step of subjecting the transparent resin layer to ultraviolet irradiation treatment while heating the semiconductor substrate,
Wherein while heating the semiconductor substrate to 100 to 200 ° C., the transparent resin layer is a step of irradiation treatment energy ultraviolet of 10mj / cm 2 ~500mj / cm 2 ,
A method for manufacturing a solid-state imaging device according to claim 1 .
前記透明樹脂層上に、ポジ型の感光性樹脂からなる感光性樹脂層を形成する工程と、Forming a photosensitive resin layer made of a positive photosensitive resin on the transparent resin layer;
前記感光性樹脂層を露光して、前記感光性樹脂層に前記受光部に対応するパターンを形成する工程と、Exposing the photosensitive resin layer to form a pattern corresponding to the light receiving portion on the photosensitive resin layer; and
前記パターンを前記透明樹脂層に転写する工程と、Transferring the pattern to the transparent resin layer;
前記半導体基板を加熱しつつ、前記透明樹脂層を紫外線照射処理する工程とA step of ultraviolet-irradiating the transparent resin layer while heating the semiconductor substrate;
により形成された固体撮像装置。Solid-state imaging device formed by
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10262009A JP2000091549A (en) | 1998-09-16 | 1998-09-16 | Manufacture of on-chip microlenses and of solid-state image pickup device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10262009A JP2000091549A (en) | 1998-09-16 | 1998-09-16 | Manufacture of on-chip microlenses and of solid-state image pickup device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000091549A JP2000091549A (en) | 2000-03-31 |
| JP2000091549A5 true JP2000091549A5 (en) | 2005-10-20 |
Family
ID=17369759
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10262009A Abandoned JP2000091549A (en) | 1998-09-16 | 1998-09-16 | Manufacture of on-chip microlenses and of solid-state image pickup device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000091549A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20050057968A (en) * | 2003-12-11 | 2005-06-16 | 매그나칩 반도체 유한회사 | Method for fabricating image sensor with inorganic microrens |
| CN116584102A (en) * | 2020-12-16 | 2023-08-11 | 索尼半导体解决方案公司 | Image forming apparatus and method of manufacturing the same |
-
1998
- 1998-09-16 JP JP10262009A patent/JP2000091549A/en not_active Abandoned
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