JP2003086778A5 - - Google Patents

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JP2003086778A5
JP2003086778A5 JP2001275283A JP2001275283A JP2003086778A5 JP 2003086778 A5 JP2003086778 A5 JP 2003086778A5 JP 2001275283 A JP2001275283 A JP 2001275283A JP 2001275283 A JP2001275283 A JP 2001275283A JP 2003086778 A5 JP2003086778 A5 JP 2003086778A5
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refractive index
film
photoelectric conversion
material film
high refractive
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JP2001275283A
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JP2003086778A (en
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Priority to JP2001275283A priority Critical patent/JP2003086778A/en
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【００１１】
【課題を解決するための手段】
本発明は、少なくとも光電変換部が形成された半導体基板上に、前記光電変換部の上方に凹部を有する層間膜を形成し、
高屈折率及び感光性を有する材料膜を前記層間膜上に形成し、該材料膜を前記光電変換部の上方に残存するようにパターニングし、
該材料膜を熱処理により変形させて、両面に凸部を有する層内レンズを形成する半導体装置の製造方法を提供する。
また、本発明は、上記の方法により、少なくとも光電変換部及び層間膜が形成された半導体基板上であって、前記光電変換部の上方に、高屈折率材料によって両面に凸部を有する層内レンズが形成されてなる半導体装置を提供する。
別の観点によれば、本発明は、少なくとも光電変換部、転送電極及び遮光膜が形成された半導体基板上に、前記光電変換部の上方に転送電極及び遮光膜に起因する凹部を有する層間膜を形成し、高屈折率及び感光性を有する材料膜を前記層間膜上に形成し、該材料膜を前記光電変換部の上方に残存するようにパターニングし、熱処理により変形させて、両面に凸部を有する層内レンズを形成する半導体装置の製造方法を提供する。
また、本発明は、上記方法により、光電変換部、転送電極、遮光膜及び層間膜が形成された半導体基板上であって、前記光電変換部の上方に、高屈折率材料によって両面に凸部を有する層内レンズが形成されてなる半導体装置を提供する。[0011]
[Means for Solving the Problems]
According to the present invention, an interlayer film having a recess above the photoelectric conversion portion is formed on a semiconductor substrate on which at least the photoelectric conversion portion is formed,
A material film having a high refractive index and photosensitivity is formed on the interlayer film, and the material film is patterned so as to remain above the photoelectric conversion unit,
A method of manufacturing a semiconductor device is provided, in which the material film is deformed by heat treatment to form an in-layer lens having convex portions on both sides.
Further, according to the present invention, there is provided a semiconductor substrate on which at least a photoelectric conversion portion and an interlayer film are formed by the above method, and in which a convex portion is formed on both sides by a high refractive index material above the photoelectric conversion portion. Provided is a semiconductor device on which a lens is formed.
According to another aspect, the present invention provides an interlayer film having a concave portion originating from the transfer electrode and the light shielding film above the photoelectric conversion unit on the semiconductor substrate on which at least the photoelectric conversion unit, the transfer electrode and the light shielding film are formed. Forming a material film having a high refractive index and photosensitivity on the interlayer film, patterning the material film to remain above the photoelectric conversion portion, deforming it by heat treatment, and forming a convex on both sides Provided is a method of manufacturing a semiconductor device in which an in-layer lens having a portion is formed.
Further, according to the present invention, on the semiconductor substrate on which the photoelectric conversion portion, the transfer electrode, the light shielding film, and the interlayer film are formed by the above method, the convex portion on both surfaces is made of the high refractive index material above the photoelectric conversion portion. The present invention provides a semiconductor device having an in-layer lens formed thereon.

Claims (13)

少なくとも光電変換部が形成された半導体基板上に、前記光電変換部の上方に凹部を有する層間膜を形成し、An interlayer film having a recess above the photoelectric conversion portion is formed on the semiconductor substrate on which at least the photoelectric conversion portion is formed,
高屈折率及び感光性を有する材料膜を前記層間膜上に形成し、該材料膜を前記光電変換部の上方に残存するようにパターニングし、  A material film having a high refractive index and photosensitivity is formed on the interlayer film, and the material film is patterned so as to remain above the photoelectric conversion unit,
該材料膜を熱処理により変形させて、両面に凸部を有する層内レンズを形成することを特徴とする半導体装置の製造方法。  A method of manufacturing a semiconductor device comprising: deforming the material film by heat treatment to form an in-layer lens having convex portions on both sides. 少なくとも光電変換部、転送電極及び遮光膜が形成された半導体基板上に、前記光電変換部の上方に転送電極及び遮光膜に起因する凹部を有する層間膜を形成し、
高屈折率及び感光性を有する材料膜を前記層間膜上に形成し、該材料膜を前記光電変換部の上方に残存するようにパターニングし、
該材料膜を熱処理により変形させて、両面に凸部を有する層内レンズを形成することを特徴とする半導体装置の製造方法。On the semiconductor substrate on which at least the photoelectric conversion unit, the transfer electrode, and the light shielding film are formed, an interlayer film having a recess caused by the transfer electrode and the light shielding film is formed above the photoelectric conversion unit;
A material film having a high refractive index and photosensitivity is formed on the interlayer film, and the material film is patterned so as to remain above the photoelectric conversion unit,
A method of manufacturing a semiconductor device comprising: deforming the material film by heat treatment to form an in-layer lens having convex portions on both sides. 高屈折率及び感光性を有する材料膜が、透明高屈折率材料と該材料の屈折率よりも高い屈折率を有する無機酸化物微粒子とを含んでなる請求項１又は２に記載の方法。The method according to claim 1 or 2 , wherein the material film having high refractive index and photosensitivity comprises a transparent high refractive index material and inorganic oxide fine particles having a refractive index higher than the refractive index of the material. 層内レンズ上に、さらに透明で低屈折率を有する材料膜を形成する請求項１〜３のいずれか１つに記載の方法。The method according to any one of claims 1 to 3, wherein a transparent material film having a low refractive index is further formed on the in-layer lens. 高屈折率及び感光性を有する材料膜と透明で低屈折率を有する材料膜との屈折率の差が０．５以上である請求項４に記載の方法。5. The method according to claim 4 , wherein the difference in refractive index between the material film having high refractive index and photosensitivity and the material film having transparency and low refractive index is 0.5 or more. さらに、層内レンズの上方に透明で低屈折率を有する材料膜を介してマイクロレンズを形成する請求項１〜５のいずれか１つに記載の方法。The method according to any one of claims 1 to 5 , further comprising forming a microlens through a transparent material film having a low refractive index above the in-layer lens. 請求項１〜６に記載の方法により、少なくとも光電変換部及び層間膜が形成された半導体基板上であって、前記光電変換部の上方に、高屈折率材料によって両面に凸部を有する層内レンズが形成されてなる半導体装置。The semiconductor substrate on which at least the photoelectric conversion portion and the interlayer film are formed by the method according to claim 1, and in the layer having the convex portions on both sides by the high refractive index material above the photoelectric conversion portion. A semiconductor device on which a lens is formed. 請求項１〜６に記載の方法により、光電変換部、転送電極、遮光膜及び層間膜が形成された半導体基板上であって、前記光電変換部の上方に、高屈折率材料によって両面に凸部を有する層内レンズが形成されてなる半導体装置。A semiconductor device on which a photoelectric conversion part, a transfer electrode, a light shielding film, and an interlayer film are formed by the method according to any one of claims 1 to 6 , wherein the high refractive index material is convex on both sides above the photoelectric conversion part. A semiconductor device in which an in-layer lens having a portion is formed. 高屈折率材料が、該高屈折率材料の屈折率よりも高い屈折率を有する無機酸化物微粒子を含んでなる請求項７又は８に記載の装置。The device according to claim 7 or 8 , wherein the high refractive index material comprises inorganic oxide fine particles having a refractive index higher than the refractive index of the high refractive index material. 層内レンズ上に、さらに透明で低屈折率を有する材料膜が形成されてなる請求項７〜９のいずれか１つに記載の装置。The apparatus according to any one of claims 7 to 9, wherein a transparent material film having a low refractive index is further formed on the in-layer lens. 高屈折率材料膜と透明で低屈折率を有する材料膜との屈折率の差が０．５以上である請求項１０に記載の装置。11. The device according to claim 10 , wherein the difference in refractive index between the high refractive index material film and the transparent low refractive index material film is 0.5 or more. さらに、層内レンズの上方に透明で低屈折率を有する材料膜を介してマイクロレンズが形成されてなる請求項７〜１１のいずれか１つに記載の装置。The apparatus according to any one of claims 7 to 11 , further comprising a microlens formed above the intralayer lens through a transparent material film having a low refractive index. マイクロレンズが、凸状又はアーチ形状である請求項１２に記載の装置。13. The apparatus of claim 12 , wherein the microlenses are convex or arched.
JP2001275283A 2001-09-11 2001-09-11 Semiconductor device and manufacturing method therefor Pending JP2003086778A (en)

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JP2003086778A5 true JP2003086778A5 (en) 2004-12-16

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Publication number Priority date Publication date Assignee Title
JP4595405B2 (en) * 2004-07-02 2010-12-08 ソニー株式会社 Solid-state imaging device and manufacturing method thereof
JP2006156799A (en) * 2004-11-30 2006-06-15 Fuji Photo Film Co Ltd Solid-state image sensor and its manufacturing method
JP4622526B2 (en) * 2005-01-11 2011-02-02 ソニー株式会社 Manufacturing method of solid-state imaging device
JP2006222270A (en) * 2005-02-10 2006-08-24 Sony Corp Solid-state image sensor and its manufacturing method
JP2006269533A (en) * 2005-03-22 2006-10-05 Sharp Corp Solid-state imaging device and its manufacturing method, electronic information equipment
JP4793042B2 (en) * 2005-03-24 2011-10-12 ソニー株式会社 Solid-state imaging device and imaging apparatus
US7666704B2 (en) 2005-04-22 2010-02-23 Panasonic Corporation Solid-state image pickup element, method for manufacturing such solid-state image pickup element and optical waveguide forming device
US7968888B2 (en) 2005-06-08 2011-06-28 Panasonic Corporation Solid-state image sensor and manufacturing method thereof
JP2006344755A (en) * 2005-06-08 2006-12-21 Matsushita Electric Ind Co Ltd Solid state imaging device and camera employing it
US7638804B2 (en) 2006-03-20 2009-12-29 Sony Corporation Solid-state imaging device and imaging apparatus
JP2008042024A (en) * 2006-08-08 2008-02-21 Fujifilm Corp Solid-state imaging device
JP5816428B2 (en) * 2010-12-24 2015-11-18 富士フイルム株式会社 Photosensitive transparent composition for color filter of solid-state image sensor, method for producing color filter of solid-state image sensor using the same, color filter of solid-state image sensor, and solid-state image sensor

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