JP2000077380A - Detergent composition for manufacture process of silicon wafer manufacture process - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a detergent composition for silicon wafer manufacturing which is not inflammable and has no influence on a silicon ingot and has little influence on the human body and environment, either, and is capable of dilution by water and is economically excellent, too, to say nothing of the matter that the washing property to contaminated oil a slicing agent, abrasive grain, silicon fragments, etc., adhering to the wafer after silicon especially by a wire saw method is good. SOLUTION: This is a detergent composition for silicon wafer manufacturing which contains the components of the following a, b, and c. (a) 5-20 wt.% of ethylene glycol solvent expressed by a general formula (1): R1O-(CH2CH2O)n- R2(R1 shows an alkyl group of 1-4 in the number of hydrogen atoms or the carbon atoms. R2 shows an alkyl group or 1-4 in the number of carbon atoms. n shows an integer of 1-3). (b) 0.5-30 wt.% of one kind selected from the group of a cathode ion interface activator, a nonion interface activator, and an alkyl amine oxide. (c) 50-94.5 wt.% of water.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cleaning composition used for removing a slicing oil, abrasive grains, silicon dust and the like adhering to a silicon wafer surface after slicing a silicon ingot in a silicon wafer manufacturing process. About things.

[0002]

2. Description of the Related Art As a method of slicing a silicon ingot in a silicon wafer manufacturing process, there are an inner peripheral blade method, a band saw method, a wire saw method and the like. At this time, a slicing oil is used, but after slicing, the slicing oil adheres to the silicon wafer surface in a state in which abrasive grains, silicon chips, and the like are mixed and dispersed, and these are used to move to the next step. Need to be cleaned. In particular, in the wire saw method, an ingot is fixed to a fixing base called a slice base using an adhesive, and the ingot is cut while cutting a part of the slice base to manufacture a wafer. Then, the cut ingot is washed while being attached to the slice base, but the cut margin is about 0.2.
mm, and because the wire saw oil has high viscosity, it contains abrasive grains, silicon chips, etc., and is completely clogged between the cutting margins, making cleaning extremely difficult. I have.

Conventionally, an alkaline cleaning agent has been used,
In this case, although there is an initial detergency, the detergency of the detergency due to the incorporation of the wire saw oil into the cleaning solution is rapid, and the silicon wafer surface is etched and discolored.

Japanese Patent Application Laid-Open No. 9-223679 proposes a detergent composition comprising a hydrocarbon solvent, an organic solvent, a nonionic surfactant, and water. There is a problem that stain-like residue remains due to water retention and water repelling after rinsing.

[0005]

DISCLOSURE OF THE INVENTION The present invention has been made to solve the above-mentioned drawbacks. In particular, in the cleaning of a wire saw oil, the cleaning property is good, there is no flash point, and the present invention is applied to a silicon ingot. An object of the present invention is to provide a cleaning composition for a silicon wafer manufacturing process which has no influence on human body and environment, has little influence on human body and environment, can be diluted with water, and is economically excellent.

[0006]

Means for Solving the Problems The present invention provides the following (a):
Provided is a cleaning composition for a silicon wafer manufacturing process, comprising the components (b) and (c). (B) the general formula _{(1): R 1 O- (} CH 2 CH 2 O) n-R 2 (1) (R 1 is, .R ₂ represent a hydrogen atom or an alkyl group having 1 to 4 carbon atoms is , An alkyl group having 1 to 4 carbon atoms, and n represents an integer of 1 to 3.) 5 to 20% by weight of an ethylene glycol solvent represented by the formula (2): anionic surfactant, nonionic interface At least one selected from the group consisting of an activator and an alkylamine oxide;
Seed 0.5 to 30% by weight (c) Water 50 to 94.5% by weight

[0007]

BEST MODE FOR CARRYING OUT THE INVENTION The cleaning composition of the present invention contains
Of the ethylene glycol solvent represented by the general formula (1)
R₁Is a hydrogen atom or an alkyl having 1 to 4 carbon atoms.
And R represents ₂Represents an alkyl group having 1 to 4 carbon atoms.
Show. n shows the integer of 1-3.

Specifically, ethylene glycol monomethyl ether, diethylene glycol monomethyl ether, triethylene glycol monomethyl ether, ethylene glycol monopropyl ether, diethylene glycol monopropyl ether, ethylene glycol monoisopropyl ether, diethylene glycol isopropyl ether, ethylene glycol monobutyl ether, Diethylene glycol monobutyl ether,
Triethylene glycol monobutyl ether, ethylene glycol monoisobutyl ether, diethylene glycol monoisobutyl ether, ethylene glycol monohexyl ether, diethylene glycol monohexyl ether, ethylene glycol monobenzyl ether,
Examples include ethylene glycol monophenyl ether, ethylene glycol dimethyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol dibutyl ether, and triethylene glycol dibutyl ether. Preferably, ethylene glycol monobutyl ether, ethylene glycol monohexyl ether, diethylene glycol dibutyl ether, triethylene glycol dibutyl ether and the like are exemplified. Particularly preferred is diethylene glycol dibutyl ether. These may be used alone, or may be used as a mixture.

The amount of the ethylene glycol is from 5 to 20% by weight based on the whole detergent composition. 5% by weight
If the amount is less than the above, the washing property is not sufficient. If the amount is more than 20% by weight, the rinsing may be incomplete or may have flammability, which is not preferable.

An anionic surfactant used in the present invention,
The nonionic surfactant and the alkylamine oxide dissolve the component ethylene glycol-based solvent in the system and impart strong permeability. Specific examples of anionic surfactants include higher fatty acid salts, alkylbenzene sulfonates, n-paraffin sulfonates, α-olefin sulfonates, dialkyl sulfosuccinates, secondary alcohol sulfonates, and alkyl naphthalenes. Sulfonates, higher alcohol sulfates, polyoxyethylene alkyl sulfates, polyoxyethylene alkyl phosphates and the like can be mentioned. Preferably, dialkyl sulfosuccinate (dialkyl has 10 to 18 carbon atoms),
Secondary alcohol sulfonate (secondary alcohol has 10 to 18 carbon atoms).

Specific examples of the nonionic surfactant include polyoxyethylene alkyl ether, polyoxyethylene alkyl phenyl ether, and polyoxyethylene secondary alcohol ether. Preferably, it is a polyoxyethylene secondary alcohol ether having 2 to 6 ethylene oxide addition moles (the secondary alcohol has 10 to 18 carbon atoms).

The alkyl group of the alkylamine oxide is
Preferred are those having 8 to 18 carbon atoms. Specifically,
Decylamine oxide, dodecylamine oxide and the like.

The amounts of these anionic surfactants, nonionic surfactants and alkylamine oxides are as follows:
The total of these is 0.5 to 3 with respect to the entire cleaning composition.
0% by weight. When the content is 0.5% by weight or less, the performance as a penetration aid cannot be exhibited, and when the content is more than 30% by weight, a problem may occur in its own solubility or flammability may occur, which is not preferable. A preferred compounding amount is 2.5 to 20% by weight.

The amount of component water in the cleaning composition of the present invention is 50 to 94.5% by weight of the entire cleaning composition.
Preferably, it is 60 to 80% by weight.

If necessary, a rust inhibitor, a corrosion inhibitor,
An anticorrosive or the like may be appropriately blended.

The detergent composition of the present invention is generally used in the form of a stock solution, but may be diluted with water as required. However, it is preferably 2% by weight or more from the viewpoint of cleaning ability.

As a cleaning method using the cleaning composition of the present invention, known cleaning methods such as immersion cleaning, ultrasonic cleaning, stirring cleaning, and brushing cleaning can be used. After washing, rinsing is generally performed using pure water, and drying is performed by air blow or the like.

[0018]

EXAMPLES The present invention will be described below with reference to examples, but the present invention is not limited to these examples. Examples 1 to 8 and Comparative Examples 1 to 4 The cleaning compositions shown in Table 1 were respectively prepared, and the following (a) cleaning test by immersion and (b) cleaning test using ultrasonic waves were performed. The results are shown in Table 1.

(A) Washing test method by immersion A slicing oil agent (PL-SW-1 manufactured by Palace Chemical Co., Ltd.) in which abrasive grains are dispersed in a polycrystalline silicon wafer is applied to the front surface of the wafer as a contaminated oil, and left overnight. These were used as test pieces. A test piece was immersed for 10 minutes in a 10% aqueous solution of the cleaning compositions of Examples 1 to 7 and Comparative Example 3 shown in Table 1 and a stock solution (liquid temperature of 40 ° C.) of Comparative Examples 1 and 2, and then using pure water. After washing (rinsing) with water for 3 minutes and drying at room temperature, the washing property was evaluated. In the cleaning performance evaluation, a value obtained by dividing the loss of the contaminated oil before and after cleaning by the coating amount before cleaning was calculated as a cleaning removal rate. In addition, the rinsing property, that is, the state of the oil film residue on the surface of the polycrystalline silicon wafer after the above-described rinsing treatment with pure water was visually observed.

(B) Cleaning Test Method Using Ultrasonic Waves Three 8-inch single crystal silicon wafers are set at intervals of 0.2 mm, and a slicing oil in which abrasive grains used in the cleaning test by immersion are dispersed is applied between the wafers. The test piece was completely impregnated. The test piece is immersed in the cleaning solution (4 liters, 60 ° C.) used in the immersion cleaning test,
Ultrasonic cleaning at 28 kHz and 600 W was performed twice for 30 minutes, rinsed, dried, and evaluated in the same manner as the cleaning test by immersion. The results are shown in Table 1.

The pH and flash point of the examples were measured (using a Cleveland open flash point measuring device). The pH was in the neutral range of 6 to 8, and no flash point was present.

[0022]

[Table 1]

[0023]

The cleaning composition for a silicon wafer manufacturing process according to the present invention comprises a slicing oil agent, abrasive grains, silicon dust, etc. attached to the silicon wafer surface after cutting and slicing a silicon ingot in the silicon wafer manufacturing process. It is good for removing contaminants and has no stains after rinsing. In addition, since there is no flash point and the pH is in the neutral range of 6 to 8, the load on the human body and the environment is small, and it can be diluted with water, which is economically useful.

Claims (6)

[Claims] 1. A cleaning composition for a silicon wafer manufacturing process comprising the following components (a), (b) and (c): (B) the general formula _{(1): R 1 O- (} CH 2 CH 2 O) n-R 2 (1) (R 1 is, .R ₂ represent a hydrogen atom or an alkyl group having 1 to 4 carbon atoms is , An alkyl group having 1 to 4 carbon atoms, and n represents an integer of 1 to 3.) 5 to 20% by weight of an ethylene glycol solvent represented by the formula (2): anionic surfactant, nonionic interface At least one selected from the group consisting of an activator and an alkylamine oxide;
Seed 0.5 to 30% by weight (c) Water 50 to 94.5% by weight 2. A cleaning composition for a silicon wafer manufacturing process, comprising the following components (a), (b), (c) and (d): (B) the general formula _{(1): R 1 O- (} CH 2 CH 2 O) n-R 2 (1) (R 1 is, .R ₂ represent a hydrogen atom or an alkyl group having 1 to 4 carbon atoms is Represents an alkyl group having 1 to 4 carbon atoms, and n represents an integer of 1 to 3.) 5 to 20% by weight of an ethylene glycol solvent represented by the formula (2): anionic surfactant and nonionic interface At least one of the activators 0.5 to 30% by weight (c) alkylamine oxide 0.5 to 30% by weight (d) water 50 to 94.5% by weight However, the total amount of (b) and (c) is Not to exceed 30% by weight. 3. The ethylene glycol solvent represented by the general formula (1): R ₁ O— (CH ₂ CH ₂ O) n—R ₂ (1) is diethylene glycol dibutyl ether. The cleaning composition for a silicon wafer manufacturing process according to the above. 4. The cleaning composition according to claim 1, wherein the anionic surfactant is a secondary alkyl sulfonate. 5. The cleaning agent according to claim 1, wherein the nonionic surfactant is a polyoxyethylene secondary alcohol ether having 2 to 6 ethylene oxide addition moles. Composition. 6. The cleaning composition according to claim 1, wherein the alkylamine oxide is dodecylamine oxide.