JP2000075489A - Chemical amplification type resist material - Google Patents
Chemical amplification type resist materialInfo
- Publication number
- JP2000075489A JP2000075489A JP24124798A JP24124798A JP2000075489A JP 2000075489 A JP2000075489 A JP 2000075489A JP 24124798 A JP24124798 A JP 24124798A JP 24124798 A JP24124798 A JP 24124798A JP 2000075489 A JP2000075489 A JP 2000075489A
- Authority
- JP
- Japan
- Prior art keywords
- group
- resist material
- added
- chemically amplified
- parts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、脂環式アクリル系
樹脂と光酸発生剤とを含む化学増幅系レジスト材料に関
し、特に、例えば半導体基板上に塗布し所望のパターン
のマスクまたはレティクルを通してＡｒＦエキシマレー
ザーなどの遠赤外線光にて露光し、現像して、微細なフ
ォトレジストパターンを得る用途等に使用される化学増
幅系レジスト材料に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chemically amplified resist material containing an alicyclic acrylic resin and a photoacid generator, and more particularly to, for example, ArF through a mask or a reticle having a desired pattern applied on a semiconductor substrate. The present invention relates to a chemically amplified resist material used for applications such as exposing with a far infrared light such as an excimer laser and developing to obtain a fine photoresist pattern.
【０００２】[0002]
【従来の技術】従前の光リソグラフィでは、そのレジス
ト材料として、ベース樹脂にノボラック樹脂を用い、感
光剤にナフトキノンジアジドを用いた溶解抑止型ポジ型
レジストが主流で、その露光光には専ら水銀放電灯のｇ
線（４３６ｎｍ）、ｉ線（３６５ｎｍ）が用いられてき
た。しかし、ハーフミクロン（０．５μｍ）以下の設計
ルールのパターンを形成するには遠紫外光であるエキシ
マレーザー光（２４８ｎｍ、１９３ｎｍ等）を用いたリ
ソグラフィが必要となるが、従来のｇ線、ｉ線用のフォ
トレジスト材料では光吸収が大き過ぎ良好なレジストパ
ターンが得られないため、新たに遠赤外線用のレジスト
材料の開発が必要となった。2. Description of the Related Art In conventional optical lithography, a dissolution-suppressing positive resist using a novolak resin as a base resin and naphthoquinonediazide as a photosensitive agent is mainly used as a resist material, and mercury emission is mainly used for the exposure light. G of electric light
Line (436 nm) and i-line (365 nm) have been used. However, lithography using excimer laser light (248 nm, 193 nm, etc.), which is far ultraviolet light, is required to form a pattern having a design rule of less than half micron (0.5 μm). Since a photoresist material for a line has too much light absorption to obtain a good resist pattern, a new resist material for far infrared rays has to be developed.
【０００３】そのような状況下にあって、光酸発生剤か
ら発生する酸触媒の増感反応を利用した化学増幅系レジ
ストが考案され、短波長リソグラフィ用レジストや高感
度が要求される電子線リソグラフィ用レジストとして広
く採用されるようになってきている。露光波長１９３ｎ
ｍのＡｒＦエキシマレーザーリソグラフィ用レジスト
は、特に光吸収の問題が大きく、レジスト構成成分に制
約が大きい。これまでに脂環式メタクリレート樹脂と光
酸発生剤からなる２成分系ポジ型レジスト（例えば、Pr
oc. SPIE, vol.2438, p.433, 1995）が一般に提案され
ている。Under such circumstances, a chemically amplified resist utilizing a sensitization reaction of an acid catalyst generated from a photoacid generator has been devised, and a resist for short wavelength lithography or an electron beam requiring high sensitivity has been devised. It has been widely adopted as a resist for lithography. Exposure wavelength 193n
In particular, a resist for ArF excimer laser lithography having a problem of m has a great problem of light absorption, and there are great restrictions on resist components. Until now, a two-component positive resist composed of an alicyclic methacrylate resin and a photoacid generator (for example, Pr
oc. SPIE, vol. 2438, p. 433, 1995).
【０００４】[0004]
【発明が解決しようとする課題】しかし、脂環式メタク
リレートを用いた従来のレジスト材料では、構成成分に
芳香環が含まれていないため、レジストパターン形成後
下地膜にパターンを転写する際に用いられるドライエッ
チングに対する耐性が低くレジストパターンが正確に転
写されないという欠点があった。また、同じ理由によ
り、耐熱性が低いため、すなわち熱変形開始温度が低い
ため、ドライエッチング時の基板温度の上昇により熱変
形を起こし易く、このことによっても正確なパターン転
写が阻害されていた。また、未露光部と露光部との溶解
速度比が十分に高くなかったため、高精度で解像度の高
いレジストパターンを得ることが出来なかった。したが
って、本発明の解決すべき課題は上述の従来例の問題点
を解決することであって、その目的は、第１に、２２０
ｎｍ以下の波長の遠紫外線を露光光とする化学増幅系レ
ジスト材料のドライエッチング耐性および耐熱性を向上
させて、高精度の微細パターンを形成しうるようにする
ことであり、第２に、溶解コントラスト比の十分に高い
レジスト材料を提供しうるようにすることである。However, in the conventional resist material using alicyclic methacrylate, since the constituent component does not contain an aromatic ring, it is used when transferring a pattern to a base film after forming a resist pattern. However, there is a drawback that the resist pattern cannot be transferred accurately because of its low resistance to dry etching. Further, for the same reason, since the heat resistance is low, that is, the thermal deformation start temperature is low, thermal deformation is likely to occur due to an increase in the substrate temperature during dry etching, and this also hinders accurate pattern transfer. In addition, since the dissolution rate ratio between the unexposed portion and the exposed portion was not sufficiently high, a resist pattern with high precision and high resolution could not be obtained. Therefore, the problem to be solved by the present invention is to solve the above-mentioned problems of the conventional example.
The purpose of the present invention is to improve the dry etching resistance and heat resistance of a chemically amplified resist material using far ultraviolet light having a wavelength of not more than nm as exposure light so that a highly accurate fine pattern can be formed. An object of the present invention is to provide a resist material having a sufficiently high contrast ratio.
【０００５】[0005]
【課題を解決するための手段】上述の課題を解決するた
め、本発明によれば、酸により極性が変化する保護基を
有する脂環式アクリル系樹脂と光酸発生剤とを含むレジ
スト材料に、極性が変化する保護基を有するビスフェノ
ール誘導体が添加されていることを特徴とする化学増幅
系レジスト材料が、提供される。According to the present invention, there is provided a resist material containing an alicyclic acrylic resin having a protecting group whose polarity is changed by an acid and a photoacid generator. And a chemically amplified resist material characterized by adding a bisphenol derivative having a protecting group whose polarity changes.
【０００６】また、本発明によれば、酸により極性が変
化する保護基を有する脂環式アクリル系樹脂と光酸発生
剤とを含むレジスト材料に、水添加ポリヒドロキシスチ
レン誘導体が添加されていることを特徴とする化学増幅
系レジスト材料が、提供される。Further, according to the present invention, a water-added polyhydroxystyrene derivative is added to a resist material containing an alicyclic acrylic resin having a protective group whose polarity is changed by an acid and a photoacid generator. A chemically amplified resist material is provided.
【０００７】[0007]
【作用】本発明においては、ベースポリマーである、脂
環式アクリレート樹脂に、溶解抑止剤となる低分子量の
ビスフェノール誘導体または水添加ポリヒドロキシスチ
レン誘導体が添加される。これにより、露光部での溶解
速度が上昇し、未露光部での溶解速度が減少するため、
溶解コントラストが向上し、解像度が改善される。ま
た、２２０ｎｍ以下の波長の遠紫外線に対して透明なビ
スフェノール誘導体または水添加ポリヒドロキシスチレ
ン誘導体の芳香環（またはその水素添加物）が添加され
たことにより、露光光の吸収を増大させることなくこの
芳香環またはシクロ環に含まれる炭素原子およびその結
合によりドライエッチング耐性および耐熱性が改善さ
れ、ドライエッチング時の膜減りを抑制することができ
るとともにレジスト膜の熱によるレジストパターンの変
形を抑えることが出来る。In the present invention, a low molecular weight bisphenol derivative or a water-added polyhydroxystyrene derivative serving as a dissolution inhibitor is added to an alicyclic acrylate resin as a base polymer. As a result, the dissolution rate in the exposed part increases, and the dissolution rate in the unexposed part decreases,
The dissolution contrast is improved and the resolution is improved. Further, by adding an aromatic ring (or a hydrogenated product thereof) of a bisphenol derivative or a water-added polyhydroxystyrene derivative which is transparent to far ultraviolet rays having a wavelength of 220 nm or less, the absorption of exposure light can be increased without increasing the absorption. The dry etching resistance and heat resistance are improved by the carbon atoms contained in the aromatic ring or the cyclo ring and the bonding thereof, so that the film loss during dry etching can be suppressed and the deformation of the resist pattern due to the heat of the resist film can be suppressed. I can do it.
【０００８】[0008]
【発明の実施の形態】次に、本発明の実施の形態につい
て説明する。本発明の化学増幅系レジスト材料は、ベー
スポリマーである酸触媒により極性が変化する保護基を
有する脂環式アクリル系樹脂に、光酸発生剤を添加して
なる２成分化学増幅系レジストを用いて製造される。脂
環式アクリル系樹脂としては、ポリ（トリシクロデシル
アクリレート-co-テトラヒドロピラニルメタクリレート
-co-メタクリル酸）〔poly(tricyclodecylacrylate-co-
tetrahydropyranyl-methacrylate-co-methacrylic aci
d) 〕樹脂などの共重合体が用いられる。光酸発生剤と
しては、通常用いられている材料の中から適宜選択でき
る。すなわち、オニウム塩、スルホン酸エステル、ジア
ゾスルホン等が使用可能であり、特に好ましい材料とし
てはオニウム塩であるトリフェニルスルフォニウムトリ
フレート（ＴＰＳ）誘導体、トリフェニルスルフォニウ
ムトシレート誘導体が挙げられる。Next, an embodiment of the present invention will be described. The chemically amplified resist material of the present invention uses a two-component chemically amplified resist obtained by adding a photoacid generator to an alicyclic acrylic resin having a protecting group whose polarity is changed by an acid catalyst as a base polymer. Manufactured. Examples of the alicyclic acrylic resin include poly (tricyclodecyl acrylate-co-tetrahydropyranyl methacrylate).
-co-methacrylic acid) [poly (tricyclodecylacrylate-co-
tetrahydropyranyl-methacrylate-co-methacrylic aci
d)] A copolymer such as a resin is used. The photoacid generator can be appropriately selected from commonly used materials. That is, onium salts, sulfonic acid esters, diazosulfones and the like can be used, and particularly preferred materials include onium salts such as triphenylsulfonium triflate (TPS) derivatives and triphenylsulfonium tosylate derivatives.
【０００９】ベースポリマーに添加される極性が変化す
る保護基を有するビスフェノール誘導体としては、化１
に示されるターシャリーブトキシカルボニル（ｔ−ＢＯ
Ｃ）基を保護基として有するビスフェノールＡが挙げら
れる。Bisphenol derivatives having a protecting group whose polarity can be added to the base polymer include:
Tert-butoxycarbonyl (t-BO)
Bisphenol A having a group C) as a protecting group is exemplified.
【００１０】[0010]
【化１】 このｔ−ＢＯＣ保護ビスフェノールＡのｔ−ＢＯＣを、
ターシャリーブトキシ基（ｔ−Ｂｕ基）、テトラヒドロ
ピラニル基、エトキシエチル基（ＥＥ基）等の保護基で
置換したもの用いることもできる。ベースポリマーであ
る脂環式アクリル系樹脂１００重量部に対するビスフェ
ノール誘導体の添加量は、３〜１０重量部の範囲である
ことが好ましい。この範囲以下では、十分なドライエッ
チング耐性と耐熱性の向上を望むことが出来ず、またこ
の範囲以上では溶解が抑制され過ぎて溶解コントラスト
と解像性能が低下するからである。Embedded image The t-BOC of the t-BOC protected bisphenol A is
Those substituted with a protecting group such as a tertiary butoxy group (t-Bu group), a tetrahydropyranyl group, and an ethoxyethyl group (EE group) can also be used. The addition amount of the bisphenol derivative to 100 parts by weight of the alicyclic acrylic resin as the base polymer is preferably in the range of 3 to 10 parts by weight. If the amount is less than this range, sufficient improvement in dry etching resistance and heat resistance cannot be expected, and if the amount is more than this range, dissolution is excessively suppressed, and the dissolution contrast and resolution performance deteriorate.
【００１１】ベースポリマーである脂環式アクリル系樹
脂に、溶解抑止剤として添加される水添加ポリヒドロキ
シスチレン誘導体としては、化２に示す水添加ポリヒド
ロキシスチレン樹脂、若しくは、化３に示すｔ−ＢＯＣ
保護水添加ポリヒドロキシスチレン樹脂が挙げられる。The water-containing polyhydroxystyrene derivative to be added as a dissolution inhibitor to the alicyclic acrylic resin as a base polymer includes a water-containing polyhydroxystyrene resin shown in Chemical formula 2 or a t-type compound shown in Chemical formula 3 BOC
Protected water-added polyhydroxystyrene resins may be mentioned.
【００１２】[0012]
【化２】 Embedded image
【００１３】[0013]
【化３】 Embedded image
【００１４】化３に示すｔ−ＢＯＣ保護水添加ポリヒド
ロキシスチレン樹脂の保護基であるｔ−ＢＯＣ基を、他
の保護基例えばターシャリーブトキシ基（ｔ−Ｂｕ
基）、テトラヒドロピラニル基、エトキシエチル基（Ｅ
Ｅ基）等で置換したものを用いることもできる。ベース
ポリマーである脂環式アクリル系樹脂１００重量部に対
する水添加ポリヒドロキシスチレン誘導体の添加量は、
１〜２０重量部の範囲であることが好ましい。この範囲
以下では、十分なドライエッチング耐性と耐熱性の向上
を望むことが出来ず、またこの範囲以上では溶解が抑制
され過ぎて溶解コントラストと解像性能が低下するから
である。また、水添加ポリヒドロキシスチレン誘導体の
分子量は、５０００〜２００００の範囲であることが好
ましく、概ね１００００程度に選定される。The t-BOC group, which is the protecting group of the t-BOC protected water-added polyhydroxystyrene resin shown in Chemical formula 3, is replaced with another protecting group such as a tertiary butoxy group (t-Bu).
Group), tetrahydropyranyl group, ethoxyethyl group (E
(E group) or the like can also be used. The amount of the water-added polyhydroxystyrene derivative per 100 parts by weight of the alicyclic acrylic resin as the base polymer is
It is preferably in the range of 1 to 20 parts by weight. If the amount is less than this range, sufficient improvement in dry etching resistance and heat resistance cannot be expected, and if the amount is more than this range, dissolution is excessively suppressed, and the dissolution contrast and resolution performance deteriorate. Further, the molecular weight of the water-added polyhydroxystyrene derivative is preferably in the range of 5,000 to 20,000, and is selected to be about 10,000.
【００１５】ここで、混合する水添加ポリヒドロキシス
チレン誘導体の種類、添加量を適当に選ぶことにより、
露光部の溶解速度を大きくすることができ、レジストの
解像性に最も影響を与える溶解コントラストを大きくす
ることができ、解像性を向上させることができる。ま
た、矩形なレジストパターンが得られるため、寸法精度
を向上させることができる。Here, by appropriately selecting the kind and amount of the water-added polyhydroxystyrene derivative to be mixed,
The dissolution rate of the exposed portion can be increased, the dissolution contrast that most affects the resolution of the resist can be increased, and the resolution can be improved. In addition, since a rectangular resist pattern can be obtained, dimensional accuracy can be improved.
【００１６】[0016]
【実施例】［実施例１］保護基にｔ−ＢＯＣ基を持つpo
ly(tricyclodecylacrylate-co-tetrahydropyranyl-meth
acrylate-co-methacrylic acid) 樹脂１００重量部に、
光酸発生剤としてトリフェニルスルフォニウムトシレー
ト５重量部および化１に示すｔ−ＢＯＣ保護ビスフェノ
ールＡ３重量部を添加・混合し、レジスト材料を得た。
これをシリコンウェハー上に塗布しプリベークして膜厚
０．５μｍのレジスト膜を形成した後、ＡｒＦエキシマ
レーザー（波長１９３ｎｍ）を用いて、０．２５μｍの
ラインアンドスペースのパターンを露光した。９５℃、
７０ｓｅｃのＰＥＢ処理を行って潜像を得た後、弱アル
カリ性現像液である２．３８％テトラメチルアンモニウ
ムヒドロキシド水溶液を用いて７０ｓｅｃの現像処理を
行ってレジストパターンを得た。[Example 1] Po having a t-BOC group as a protecting group
ly (tricyclodecylacrylate-co-tetrahydropyranyl-meth
(acrylate-co-methacrylic acid)
As a photoacid generator, 5 parts by weight of triphenylsulfonium tosylate and 3 parts by weight of t-BOC protected bisphenol A shown in Chemical formula 1 were added and mixed to obtain a resist material.
This was applied on a silicon wafer and prebaked to form a resist film having a thickness of 0.5 μm, and then a 0.25 μm line and space pattern was exposed using an ArF excimer laser (wavelength: 193 nm). 95 ° C,
After performing a PEB treatment for 70 sec to obtain a latent image, a resist pattern was obtained by performing a development treatment for 70 sec using a 2.38% aqueous solution of tetramethylammonium hydroxide as a weak alkaline developer.
【００１７】得られたレジストパターンの断面形状は矩
形であった。得られたウェハーを平行平板型エッチング
装置に搭載し、ＣＦ4 をエッチングガスとするＲＩＥを
行い、ｔ−ＢＯＣ保護ビスフェノールＡを添加しない従
来のレジスト材料を用いた場合と比較して、膜減り量を
１０％以上削減できることを確認した。また、この従来
例に比較して熱変形開始温度を１０℃以上高めることが
出来た。The cross-sectional shape of the obtained resist pattern was rectangular. The obtained wafer was mounted on a parallel plate type etching apparatus, RIE was performed using CF 4 as an etching gas, and the amount of film loss was reduced as compared with the case where a conventional resist material to which t-BOC-protected bisphenol A was not added was used. Was reduced by 10% or more. Further, the thermal deformation starting temperature could be increased by 10 ° C. or more as compared with the conventional example.
【００１８】［実施例２］保護基にｔ−ＢＯＣ基を持つ
poly(tricyclodecylacrylate-co-tetrahydropyranyl-me
thacrylate-co-methacrylic acid) 樹脂１００重量部
に、光酸発生剤としてトリフェニルスルフォニウムトリ
フレート５重量部および化２に示す分子量約１００００
の水添加ポリヒドロキシスチレン樹脂５重量部を添加・
混合し、レジスト材料を得た。これをシリコンウェハー
上に塗布しベークして膜厚０．７μｍのレジスト膜を形
成した後、ＡｒＦエキシマレーザーを用いて、０．２５
μｍのラインアンドスペースのパターンを露光した。９
５℃、７０ｓｅｃのＰＥＢ処理を行って潜像を得た後、
２．３８％テトラメチルアンモニウムヒドロキシド水溶
液を用いて７０ｓｅｃの現像処理を行ってレジストパタ
ーンを得た。[Example 2] Protecting group has t-BOC group
poly (tricyclodecylacrylate-co-tetrahydropyranyl-me
thacrylate-co-methacrylic acid) 100 parts by weight of resin, 5 parts by weight of triphenylsulfonium triflate as a photoacid generator, and a molecular weight of about 10,000
5 parts by weight of water-added polyhydroxystyrene resin
After mixing, a resist material was obtained. This was coated on a silicon wafer and baked to form a resist film having a thickness of 0.7 μm, and then 0.25 μm using an ArF excimer laser.
A μm line and space pattern was exposed. 9
After performing a PEB process at 5 ° C. for 70 seconds to obtain a latent image,
A development process was performed for 70 sec using a 2.38% aqueous solution of tetramethylammonium hydroxide to obtain a resist pattern.
【００１９】得られたラインパターンの断面形状は矩形
であった。得られたウェハーをＥＣＲ型エッチング装置
に搭載し、ＣＦ4 をエッチングガスとするＲＩＥを行
い、水添加ポリヒドロキシスチレン樹脂を添加しない従
来のレジスト材料を用いた場合と比較して、膜減り量を
１０％以上削減できることを確認した。また、この従来
例に比較して熱変形開始温度を１０℃以上高めることが
出来た。The cross-sectional shape of the obtained line pattern was rectangular. The obtained wafer is mounted on an ECR type etching apparatus, RIE using CF 4 as an etching gas is performed, and the amount of film reduction is reduced as compared with a case where a conventional resist material without adding a water-added polyhydroxystyrene resin is used. It was confirmed that it could be reduced by 10% or more. Further, the thermal deformation starting temperature could be increased by 10 ° C. or more as compared with the conventional example.
【００２０】［実施例３］保護基にｔ−ＢＯＣ基を持つ
poly(tricyclodecylacrylate-co-tetrahydropyranyl-me
thacrylate-co-methacrylic acid) 樹脂１００重量部
に、光酸発生剤としてトリフェニルスルフォニウムトリ
フレート５重量部および化３に示す分子量約１００００
のｔ−ＢＯＣ保護型水添加ポリヒドロキシスチレン樹脂
１０重量部を添加・混合し、レジスト材料を得た。これ
をシリコンウェハー上に塗布しベークして膜厚０．８μ
ｍのレジスト膜を形成した後、ＡｒＦエキシマレーザー
を用いて、０．２５μｍのラインアンドスペースのパタ
ーンを露光した。９５℃、７０ｓｅｃのＰＥＢ処理を行
って潜像を得た後、２．３８％テトラメチルアンモニウ
ムヒドロキシド水溶液を用いて７０ｓｅｃの現像処理を
行ってレジストパターンを得た。Example 3 Having a t-BOC group as a protecting group
poly (tricyclodecylacrylate-co-tetrahydropyranyl-me
thacrylate-co-methacrylic acid) 100 parts by weight of resin, 5 parts by weight of triphenylsulfonium triflate as a photoacid generator, and a molecular weight of about 10,000
Was added and mixed with 10 parts by weight of a t-BOC protected water-added polyhydroxystyrene resin to obtain a resist material. This is coated on a silicon wafer and baked to a film thickness of 0.8μ.
After forming the resist film of m, a 0.25 μm line-and-space pattern was exposed using an ArF excimer laser. After performing a PEB process at 95 ° C. for 70 sec to obtain a latent image, a resist process was performed by performing a developing process for 70 sec using a 2.38% aqueous solution of tetramethylammonium hydroxide.
【００２１】得られたラインパターンの断面形状は矩形
であった。得られたウェハーをＥＣＲ型エッチング装置
に搭載し、ＣＦ4 ／Ｏ2 をエッチングガスとするＲＩＥ
を行い、水添加ポリヒドロキシスチレン樹脂を添加しな
い従来のレジスト材料を用いた場合と比較して、膜減り
量を１０％以上削減できることを確認した。また、この
従来例に比較して熱変形開始温度を１０℃以上高めるこ
とが出来た。The cross-sectional shape of the obtained line pattern was rectangular. The obtained wafer is mounted on an ECR type etching apparatus, and RIE using CF 4 / O 2 as an etching gas
It was confirmed that the amount of film reduction could be reduced by 10% or more as compared with the case where a conventional resist material to which no water-added polyhydroxystyrene resin was added was used. Further, the thermal deformation starting temperature could be increased by 10 ° C. or more as compared with the conventional example.
【００２２】[0022]
【発明の効果】以上説明したように本発明の化学増幅系
レジスト材料は、脂環式アクリル系樹脂と光酸発生剤と
を含むレジスト材料に、ビスフェノール誘導体若しくは
水添加ポリヒドロキシスチレン誘導体を添加したもので
あるので、２２０ｎｍ以下の波長の遠紫外線用のフォト
レジスト材料のドライエッチング耐性および耐熱性を向
上させることができる。従って、本発明によれば、ドラ
イエッチングによるレジストパターンの下地への転写精
度を向上させることができる。また、本発明によれば、
未露光部の溶解速度を抑えつつ、露光部の溶解速度を増
大させることができるのでレジストパターンの断面形状
を矩形として、パターン精度、解像度を向上させること
ができる。As described above, the chemically amplified resist material of the present invention is obtained by adding a bisphenol derivative or a water-added polyhydroxystyrene derivative to a resist material containing an alicyclic acrylic resin and a photoacid generator. Therefore, dry etching resistance and heat resistance of a photoresist material for far ultraviolet rays having a wavelength of 220 nm or less can be improved. Therefore, according to the present invention, the transfer accuracy of the resist pattern to the base by dry etching can be improved. According to the present invention,
Since the dissolution rate of the exposed portion can be increased while suppressing the dissolution rate of the unexposed portion, the cross-sectional shape of the resist pattern can be made rectangular to improve the pattern accuracy and resolution.
Claims (6)
脂環式アクリル系樹脂と光酸発生剤とを含むレジスト材
料に、極性が変化する保護基を有するビスフェノール誘
導体が添加されていることを特徴とする化学増幅系レジ
スト材料。1. A resist material containing an alicyclic acrylic resin having a protecting group whose polarity changes by an acid and a photoacid generator, wherein a bisphenol derivative having a protecting group whose polarity changes is added. Characteristic chemically amplified resist material.
してターシャリブトキシカルボニル基（ｔ−ＢＯＣ
基）、ターシャリブチル基（ｔ−Ｂｕ基）、テトラヒド
ロピラニル基またはエトキシエチル基（ＥＥ基）のいず
れかを有していることを特徴とする請求項１記載の化学
増幅系レジスト材料。2. The method according to claim 1, wherein the bisphenol derivative is a tertiary butoxycarbonyl group (t-BOC) as a protecting group.
2. The chemically amplified resist material according to claim 1, wherein the resist material has one of a tertiary butyl group (t-Bu group), a tetrahydropyranyl group and an ethoxyethyl group (EE group).
００重量部に対し３〜１０重量部の割合で添加されてい
ることを特徴とする請求項１記載の化学増幅系レジスト
材料。3. The bisphenol derivative is a base resin 1
2. The chemically amplified resist material according to claim 1, wherein the resist is added in an amount of 3 to 10 parts by weight based on 00 parts by weight.
脂環式アクリル系樹脂と光酸発生剤とを含むレジスト材
料に、水添加ポリヒドロキシスチレン誘導体が添加され
ていることを特徴とする化学増幅系レジスト材料。4. A chemical composition comprising a resist material containing an alicyclic acrylic resin having a protecting group whose polarity is changed by an acid and a photoacid generator, wherein a water-added polyhydroxystyrene derivative is added. Amplification resist material.
体が、保護基としてターシャリブトキシカルボニル基、
ターシャリブチル基、テトラヒドロピラニル基またはエ
トキシエチル基の中のいずれかを有していることを特徴
とする請求項４記載の化学増幅系レジスト材料。5. The tertiary butoxycarbonyl group as a protecting group, wherein the water-added polyhydroxystyrene derivative is
5. The chemically amplified resist material according to claim 4, wherein the resist material has one of a tertiary butyl group, a tetrahydropyranyl group and an ethoxyethyl group.
が、ベース樹脂１００重量部に対し１〜２０重量部の割
合で添加されていることを特徴とする請求項４記載の化
学増幅系レジスト材料。6. The chemically amplified resist material according to claim 4, wherein the water-added polyhydroxystyrene derivative is added in an amount of 1 to 20 parts by weight based on 100 parts by weight of the base resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24124798A JP2000075489A (en) | 1998-08-27 | 1998-08-27 | Chemical amplification type resist material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24124798A JP2000075489A (en) | 1998-08-27 | 1998-08-27 | Chemical amplification type resist material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000075489A true JP2000075489A (en) | 2000-03-14 |
Family
ID=17071407
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24124798A Pending JP2000075489A (en) | 1998-08-27 | 1998-08-27 | Chemical amplification type resist material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000075489A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9482943B2 (en) | 2013-08-13 | 2016-11-01 | Cheil Industries Inc. | Positive photosensitive resin composition, and photosensitive resin film and display device prepared by using the same |
Citations (7)
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|---|---|---|---|---|
| JPH06266106A (en) * | 1992-12-31 | 1994-09-22 | Internatl Business Mach Corp <Ibm> | Radiation-sensitive resist composition and its use |
| JPH06273934A (en) * | 1993-01-19 | 1994-09-30 | Shin Etsu Chem Co Ltd | Resist material |
| JPH06273935A (en) * | 1993-01-19 | 1994-09-30 | Shin Etsu Chem Co Ltd | Resin material |
| JPH06289615A (en) * | 1993-03-30 | 1994-10-18 | Nippon Zeon Co Ltd | Resist composition |
| JPH07199467A (en) * | 1993-12-28 | 1995-08-04 | Nec Corp | Photosensitive resin composition and method for forming pattern |
| JPH0827102A (en) * | 1994-07-14 | 1996-01-30 | Nec Corp | Sulfontium chloide having cross-linked cyclic alkyl group, optical acid generator, photosesitive resin composition containing the same and pattern formation using the resin |
| JPH1010715A (en) * | 1996-06-25 | 1998-01-16 | Fuji Photo Film Co Ltd | Positive photosensitive composition |
-
1998
- 1998-08-27 JP JP24124798A patent/JP2000075489A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06266106A (en) * | 1992-12-31 | 1994-09-22 | Internatl Business Mach Corp <Ibm> | Radiation-sensitive resist composition and its use |
| JPH06273934A (en) * | 1993-01-19 | 1994-09-30 | Shin Etsu Chem Co Ltd | Resist material |
| JPH06273935A (en) * | 1993-01-19 | 1994-09-30 | Shin Etsu Chem Co Ltd | Resin material |
| JPH06289615A (en) * | 1993-03-30 | 1994-10-18 | Nippon Zeon Co Ltd | Resist composition |
| JPH07199467A (en) * | 1993-12-28 | 1995-08-04 | Nec Corp | Photosensitive resin composition and method for forming pattern |
| JPH0827102A (en) * | 1994-07-14 | 1996-01-30 | Nec Corp | Sulfontium chloide having cross-linked cyclic alkyl group, optical acid generator, photosesitive resin composition containing the same and pattern formation using the resin |
| JPH1010715A (en) * | 1996-06-25 | 1998-01-16 | Fuji Photo Film Co Ltd | Positive photosensitive composition |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9482943B2 (en) | 2013-08-13 | 2016-11-01 | Cheil Industries Inc. | Positive photosensitive resin composition, and photosensitive resin film and display device prepared by using the same |
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