JPH0792681A - Resist composition - Google Patents

Abstract

PURPOSE:To provide a resist material excellent in resist characteristics such as sensitivity, resolution, etching resistance, shelf stability and process margin. CONSTITUTION:This resist compsn. contains a compd. (A) capable of forming an acid by irradiation with active light, a polymer (B) having structural units each having a group unstable to acid and convertible into an alkali-soluble polymer when the group is cleaved in the presence of the acid derived from the compd. A and a carboxylic acid amido compd. (C).

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resist composition, and more particularly to a resist material capable of forming a pattern by irradiation with ultraviolet rays, KrF excimer laser light or the like. The resist composition of the present invention is particularly suitable as a positive resist for fine processing of semiconductor devices.

[0002]

2. Description of the Related Art In order to form a fine pattern using a resist, in general, a solution containing the resist is applied on a substrate and dried to form a photosensitive film, which is then irradiated with actinic rays to form a latent image. Form. It is then developed to form a negative or positive image. The resist is roughly classified into a positive type and a negative type.In the positive type, the exposed portion has a higher solubility in a developing solution than the unexposed portion to give a positive type image, and in the negative type, it is oppositely applied. The solubility of the exposed areas is reduced to give a negative tone image.

When a semiconductor is manufactured by fine processing using a resist, a silicon wafer is used as a substrate, an image (pattern) is formed on the surface by the above-mentioned lithographic technique, and then the resist remaining on the substrate is used as a protective film. After etching, the remaining resist is removed. In recent years, as ICs, LSIs, and even VLSIs have become highly integrated, highly densified, and miniaturized, 1 μm
A technique for forming a fine pattern of m or less is required. However, it is extremely difficult to form a fine pattern of 1 μm or less with high precision by the conventional photolithography technique using near-ultraviolet rays or visible light, and the yield is significantly reduced.

Therefore, in order to improve the resolution, instead of the conventional photolithography using light (ultraviolet light having a wavelength of 350 to 450 nm), far ultraviolet light having a short wavelength, Kr.
A lithography technique using F excimer laser light (a krypton fluoride laser that emits light having a wavelength of 248 nm) or the like has been studied. A lot of high-level properties are required for the resist material which is the center of the lithography technique, and among them, the important ones are sensitivity, resolution, etching resistance and storage stability.
However, conventionally developed resist materials do not fully satisfy all of these performances, and improvement in performance is strongly desired.

For example, a negative resist such as polyglycidyl methacrylate has high sensitivity, but is inferior in resolution and dry etching resistance. Positive resists such as polymethylmethacrylate have good resolution but poor sensitivity and dry etching resistance. Also, wavelengths 350 to 4
When a novolac-based positive photoresist that has been used for UV exposure at 50 nm is exposed to deep UV, the resist itself absorbs too much light to the light source, so that a good fine pattern cannot be formed.

[0006] In recent years, attention has been focused on increasing the sensitivity of resists using an acid catalyst and a chemical amplification effect. For example, (1) a base polymer, (2) a photo-acid generator (acid can be generated by irradiation with actinic rays). , And (3) acid sensitive substances (substances that react with the acid generated by light as a catalyst to change the solubility of the base polymer, etc.) have been developed. There is. This is one in which an acid-sensitive substance reacts with an acid generated by light as a catalyst to change the solubility of the base polymer to form a positive or negative resist. For example, a positive type resist composed of a novolac resin, a photo-acid generator and a dissolution inhibitor is known (Japanese Patent Laid-Open No. 3-30083).
107160). The dissolution inhibitor has a dissolution inhibiting effect on the novolak resin, and reacts with an acid to exhibit a dissolution promoting action. In addition, the functional group that controls the solubility of the base polymer is blocked to make it insoluble, and the acid generated by light is used as a catalyst to remove the block and restore the solubility of the polymer base in the developer. There is also known a positive resist of the type.

By the way, recently, a polymer having t-butyl ester of carboxylic acid or t-butyl carbonate of phenol and having acid-labile repeatedly present branched groups and exposed to radiation. There has been proposed a resist composition containing a photopolymerization initiator which generates an acid when exposed (Japanese Patent Publication No. 27660/1990). When the coating film formed by this resist composition is irradiated with ultraviolet rays, electron beams or X-rays, the acid-labile, repeatedly present branched groups of the polymer in the irradiated portion are cleaved,
Repetitive groups with polarity are formed. This causes a large change in the solubility characteristics of the exposed and unexposed areas of the polymer coating. Then, the exposed region is selectively removed by being treated with an alkaline developer or a polar solvent, while the unexposed region is non-polar,
It is selectively removed by being treated with an apolar solvent. Therefore, the resist composition acts as a positive type or a negative type by selecting a developer.

However, when a resist composition proposed by Japanese Patent Publication No. 27660/1990 is applied, exposure, post-exposure bake, and development of a resist is carried out by a usual resist process to form a resist pattern,
The formation of the hardly soluble layer is observed on the surface portion of the resist pattern, and there is a problem that a so-called T-shaped pattern is formed. In addition, if the standing time between the exposure and the post-exposure bake is lengthened, the sensitivity is changed and the poorly soluble layer becomes thick. Therefore, there has been a strong demand for the development of a new resist having further improved resist performance.

[0009]

SUMMARY OF THE INVENTION An object of the present invention is to provide a resist material having excellent resist properties such as sensitivity, resolution, etching resistance, storage stability, and process margin. Another object of the present invention is to provide a resist material suitable for lithography using deep ultraviolet rays having a short wavelength or KrF excimer laser light. Another object of the present invention is to provide a resist composition particularly suitable as a positive resist for fine processing of semiconductor devices.

The present inventors have conducted extensive studies to overcome the above-mentioned problems of the prior art, and as a result, a photo-acid generator,
By combining a polymer having a structural unit having an acid-labile group (acid-labile group) with a carboxylic acid amide compound, generation of a hardly soluble layer on the resist pattern surface portion is suppressed, and further, It was found that a resist composition having excellent resist characteristics can be obtained. This resist composition may further contain an alkali-soluble phenol resin. The present invention has been completed based on these findings.

[0011]

Thus, according to the present invention, (A) a compound capable of generating an acid upon irradiation with actinic rays, and (B) a structural unit having an acid labile group are included. And a resist composition comprising a polymer (C) which becomes alkali-soluble by cleaving the group in the presence of an acid derived from the compound (A), and (C) a carboxylic acid amide compound. It Further, according to the present invention, there is provided a resist composition in which the resist composition further contains an alkali-soluble phenol resin. Hereinafter, the present invention will be described in detail.

(A) Photoacid generator The compound (photoacid generator) used in the present invention which can generate an acid upon irradiation with actinic rays is a substance which forms a Bronsted acid or a Lewis acid upon irradiation with actinic rays. There is no particular limitation as long as it is used, and various known compounds and mixtures can be used, and examples thereof include onium salts, halogenated organic compounds, quinonediazide compounds, α, αbis (sulfonyl).
Examples thereof include diazomethane compounds, α-carbonyl-α-sulfonyl-diazomethane compounds, sulfone compounds, organic acid ester compounds and organic acid imide compounds.

Specific examples of onium salts include diazonium salts, ammonium salts and iodonium salts having an unsubstituted, symmetrically or asymmetrically substituted alkyl group, alkenyl group, aralkyl group, aromatic group or heterocyclic group. Examples thereof include salts, sulfonium salts, phosphonium salts, arsonium salts and oxonium salts. The counter anion of these onium salts is not particularly limited as long as it is a compound capable of forming a counter anion, and examples thereof include boric acid, arsenic acid, phosphoric acid, antimonic acid, sulfonic acid, carboxylic acid, and halogens thereof. And the like.

The halogenated organic compound is not particularly limited as long as it is a halide of an organic compound, and various known compounds can be used. Specific examples thereof include a halogen-containing oxadiazole compound and a halogen-containing triazine compound. , Halogen-containing acetophenone compound, halogen-containing benzophenone compound, halogen-containing sulfoxide compound, halogen-containing sulfone compound, halogen-containing thiazole compound, halogen-containing oxazole compound, halogen-containing triazole compound, halogen-containing 2-pyrone compound , Halogen-containing aliphatic hydrocarbon compounds, halogen-containing aromatic hydrocarbon compounds, other halogen-containing heterocyclic compounds, and sulfenyl halide compounds.

Further, as halogenated organic compounds, tris (2,3-dibromopropyl) phosphate, tris (2,3-dibromo-3-chloropropyl) phosphate, chlorotetrabromobutane, hexachlorobenzene, hexabromobenzene, hexa Bromocyclododecane, hexabromobiphenyl, tribromophenyl allyl ether, tetrachlorobisphenol A, tetrabromobisphenol A, bis (bromoethyl ether)
Tetrabromobisphenol A, bis (chloroethyl ether) tetrabromobisphenol A, tris (2,
3-dibromopropyl) isocyanurate, 2,2-bis (4-hydroxy-3,5-dibromophenyl) propane, 2,2-bis (4-hydroxyethoxy-3,5
Halogen-containing flame retardants such as -dibromophenyl) propane; dichlorodiphenyltrichloroethane, benzenehexachloride, pentachlorophenol, 2,4,6
-Trichlorophenyl-4-nitrophenyl ether,
2,4-dichlorophenyl-3'-methoxy-4'-nitrophenyl ether, 2,4-dichlorophenoxyacetic acid, 4,5,6,7-tetrachlorophthalide, 1,1
-Bis (4-chlorophenyl) ethanol, 1,1-
Bis (4-chlorophenyl) -2,2,2-trichloroethanol, ethyl-4,4-dichlorobenzilate, 2,4,5,4'-tetrachlorodiphenyl sulfide, 2,4,5,4 ' -Organic chloro pesticides such as tetrachlorodiphenyl sulfone are also included.

Specific examples of the quinonediazide compound include:
1,2-benzoquinonediazide-4-sulfonic acid ester, 1,2-naphthoquinonediazide-4-sulfonic acid ester, 1,2-naphthoquinonediazide-5-sulfonic acid ester, 1,2-naphthoquinonediazide-6-sulfonic acid Ester, 2,1-naphthoquinonediazide-4-
Sulfonic acid ester, 2,1-naphthoquinonediazide-
5-sulfonic acid ester, 2,1-naphthoquinonediazide-6-sulfonic acid ester, and sulfonic acid ester of other naphthoquinonediazide derivatives; 1,2-benzoquinonediazide-4-sulfonic acid chloride, 1,2
-Naphthoquinonediazide-4-sulfonic acid chloride,
1,2-naphthoquinonediazide-5-sulfonic acid chloride, 1,2-naphthoquinonediazide-6-sulfonic acid chloride, 2,1-naphthoquinonediazide-4-sulfonic acid chloride, 2,1-naphthoquinonediazide-5
-Sulfonic acid chloride, 2,1-naphthoquinonediazide-6-sulfonic acid chloride, and sulfonic acid chlorides of other naphthoquinonediazide derivatives.

Specific examples of the α, α-bis (sulfonyl) diazomethane compound include unsubstituted, symmetrically or asymmetrically substituted alkyl group, alkenyl group, aralkyl group, aromatic group, or heterocyclic group. Α, α bis (sulfonyl) diazomethane and the like which it has. α-
Specific examples of the carbonyl-α-sulfonyl-diazomethane compound include an α-carbonyl having an unsubstituted, symmetrically or asymmetrically substituted alkyl group, an alkenyl group, an aralkyl group, an aromatic group, or a heterocyclic group. −
Examples include α-sulfonyl-diazomethane and the like.

Specific examples of sulfone compounds include unsubstituted, symmetrically or asymmetrically substituted alkyl groups,
Examples thereof include sulfone compounds and disulfone compounds having an alkenyl group, an aralkyl group, an aromatic group, or a heterocyclic group. Specific examples of the organic acid ester include carboxylic acid ester and sulfonic acid ester having an unsubstituted or substituted alkyl group, alkenyl group, aralkyl group, aromatic group, or heterocyclic group.

Specific examples of the organic acid imide include unsubstituted,
Alternatively, a carboxylic acid imide, a sulfonic acid imide, or the like having a substituted alkyl group, alkenyl group, aralkyl group, aromatic group, or heterocyclic group can be given. These compounds capable of generating an acid upon irradiation with actinic rays may be used alone or in admixture of two or more. The compounding ratio of the compound (A) capable of generating an acid upon irradiation with actinic rays is acid instability. The amount is usually 0.01 to 50 parts by weight, preferably 0.2 to 20 parts by weight, based on 100 parts by weight of the polymer (B) having a structural unit having a group. This compounding ratio is 0.01
If it is less than 50 parts by weight, it is practically impossible to form a pattern. On the contrary, if it exceeds 50 parts by weight, a development residue is likely to occur, which is inconvenient for the resist performance. (B) Polymer Having Structural Unit Having Acid-labile Group The polymer (B) used in the present invention has a structural unit having an acid-labile group and is in the presence of an acid. There is no particular limitation as long as it is a polymer in which the acid labile group is cleaved to become alkali-soluble. As such a polymer, a polymer having a structural unit represented by the following general formula (I), (II) or (III) can be exemplified. The polymer (B) contains one kind or two or more kinds of these structural units, and may be a copolymer having these structural units and other structural units.

[0020]

[Chemical 10] In the formula, R ¹ and R ² are the same or different from each other and are a hydrogen atom, a halogen atom, a cyano group, an alkyl group having 1 to 5 carbon atoms, or a substituted alkyl group having 1 to 5 carbon atoms, and R ³
Is a linear acetal group, a cyclic acetal group, a carbonate group, or —OR ⁹ . However, R ⁹ is

[0021]

[Chemical 11] Or

[0022]

[Chemical 12] Is.

However, in these formulas, R ¹⁰ , R ¹¹ ,
R ¹² , R ¹³ , R ¹⁴ and R ¹⁵ are each independently a chain alkyl group, a substituted chain alkyl group, a branched alkyl group, a substituted branched alkyl group, a cyclic alkyl group, a substituted cyclic alkyl group, an alkenyl group. , A substituted alkenyl group, an aryl group,
It represents a substituted aryl group, an aralkyl group, or a substituted aralkyl group, and of these, R ¹³ and R ¹⁴ may be hydrogen atoms.

[0024]

[Chemical 13] In the formula, R ⁴ is a hydrogen atom, a halogen atom, a cyano group, an alkyl group having 1 to 5 carbon atoms, or a substituted alkyl group having 1 to 5 carbon atoms, and R ⁵ is

[0025]

[Chemical 14] Or

[0026]

[Chemical 15] Is.

However, in these formulas, R ¹⁰ , R ¹¹ ,
R ¹² , R ¹³ , R ¹⁴ and R ¹⁵ are each independently a chain alkyl group, a substituted chain alkyl group, a branched alkyl group, a substituted branched alkyl group, a cyclic alkyl group, a substituted cyclic alkyl group, an alkenyl group. , A substituted alkenyl group, an aryl group,
It represents a substituted aryl group, an aralkyl group, or a substituted aralkyl group, and of these, R ¹³ and R ¹⁴ may be hydrogen atoms.

[0028]

[Chemical 16] In the formula, R ⁶ and R ⁷ are the same or different from each other and are a hydrogen atom, a halogen atom, a cyano group, an alkyl group having 1 to 5 carbon atoms, or a substituted alkyl group having 1 to 5 carbon atoms, and R ⁸
Is

[0029]

[Chemical 17] Or

[0030]

[Chemical 18] Is.

However, in these formulas, R ¹⁰ , R ¹¹ ,
R ¹² , R ¹³ , R ¹⁴ and R ¹⁵ are each independently a chain alkyl group, a substituted chain alkyl group, a branched alkyl group, a substituted branched alkyl group, a cyclic alkyl group, a substituted cyclic alkyl group, an alkenyl group. , A substituted alkenyl group, an aryl group,
It represents a substituted aryl group, an aralkyl group, or a substituted aralkyl group, and of these, R ¹³ and R ¹⁴ may be hydrogen atoms.

In these general formulas, examples of the substituted alkyl group having 1 to 5 carbon atoms include an alkyl group having a halogen atom as a substituent. Moreover, the linear acetal group has a carbon number of 2 to 16 as a linear acetal group, the cyclic acetal group has a carbon number of 3 to 17 as a cyclic acetal group, and the carbonate group has a carbon number of 2
There may be mentioned up to 15 carbonate groups.

Further, in R ¹⁰ , R ¹¹ , R ¹² , R ¹³ , R ¹⁴ and R ¹⁵ , the (1) chain alkyl group is a chain alkyl group having 1 to 5 carbon atoms, and (2) a substituted chain group. The branched alkyl group has 1 to 5 carbon atoms and has a substituent, for example, a substituted chain alkyl group having a halogen atom, and (3) the branched alkyl group has 3 to 8 carbon atoms.
(4) The substituted branched alkyl group has 3 to 8 carbon atoms.
Then, as the substituent, for example, a substituted branched alkyl group having a halogen atom, and as the (5) cyclic alkyl group, a cyclic alkyl group having 5 to 16 carbon atoms (including a cyclic alkyl-alkyl group) ( 6) The substituted cyclic alkyl group has 5 to 16 carbon atoms.
Then, as the substituent, for example, a substituted cyclic alkyl group having a halogen atom, (7) an alkenyl group has an alkenyl group having 2 to 7 carbon atoms, and (8) a substituted alkenyl group has a carbon number of 2 to 7, Examples of the substituent include a substituted alkenyl group having a halogen atom, (9) an aryl group having 6 to 16 carbon atoms, and (10) a substituted aryl group having 6 to 16 carbon atoms. , For example, a halogen atom, a substituted aryl group having a nitro group, (11) an aralkyl group having 7 to 16 carbon atoms, and (12) a substituted aralkyl group having 7 to 16 carbon atoms as a substituent. For example, a substituted aralkyl group having a halogen atom or a nitro group is preferable.

As the method for obtaining the polymer (B) having these structural units, there can be used general formula (I), (II) or (I
Examples thereof include a method of (co) polymerizing each monomer giving the structural unit of II), or a polymer reaction to form a (co) polymer having these structural units.
Specific examples of the monomer that provides the structural unit of the general formula (I) include the following compounds.

[0035]

[Chemical 19]

[0036]

[Chemical 20]

[0037]

[Chemical 21]

[0038]

[Chemical formula 22]

[0039]

[Chemical formula 23]

[0040]

[Chemical formula 24]

[0041]

[Chemical 25]

[0042]

[Chemical formula 26]

[0043]

[Chemical 27]

[0044]

[Chemical 28]

[0045]

[Chemical 29]

[0046]

[Chemical 30]

[0047]

[Chemical 31]

[0048]

[Chemical 32]

[0049]

[Chemical 33]

[0050]

[Chemical 34]

[0051]

[Chemical 35]

[0052]

[Chemical 36]

[0053]

[Chemical 37]

[0054]

[Chemical 38]

[0055]

[Chemical Formula 39]

[0056]

[Chemical 40]

[0057]

[Chemical 41]

[0058]

[Chemical 42]

[0059]

[Chemical 43]

[0060]

[Chemical 44]

[0061]

[Chemical formula 45]

[0062]

[Chemical formula 46]

[0063]

[Chemical 47]

[0064]

[Chemical 48] Specific examples of the monomer that gives the structural unit of the general formula (II) include the following compounds.

[0065]

[Chemical 49]

[0066]

[Chemical 50]

[0067]

[Chemical 51]

[0068]

[Chemical 52]

[0069]

[Chemical 53]

[0070]

[Chemical 54]

[0071]

[Chemical 55]

[0072]

[Chemical 56]

[0073]

[Chemical 57]

[0074]

[Chemical 58]

[0075]

[Chemical 59]

[0076]

[Chemical 60]

[0077]

[Chemical formula 61]

[0078]

[Chemical formula 62]

[0079]

[Chemical formula 63]

[0080]

[Chemical 64]

[0081]

[Chemical 65]

[0082]

[Chemical formula 66]

[0083]

[Chemical formula 67]

[0084]

[Chemical 68]

[0085]

[Chemical 69]

[0086]

[Chemical 70]

[0087]

[Chemical 71]

[0088]

[Chemical 72]

[0089]

[Chemical formula 73]

[0090]

[Chemical 74]

[0091]

[Chemical 75]

[0092]

[Chemical 76]

[0093]

[Chemical 77]

[0094]

[Chemical 78]

[0095]

[Chemical 79]

[0096]

[Chemical 80]

[0097]

[Chemical 81] Specific examples of the monomer that gives the structural unit of the general formula (III) include the following compounds.

[0098]

[Chemical formula 82]

[0099]

[Chemical 83]

[0100]

[Chemical 84]

[0101]

[Chemical 85]

[0102]

[Chemical 86]

[0103]

[Chemical 87]

[0104]

[Chemical 88]

[0105]

[Chemical 89]

[0106]

[Chemical 90]

[0107]

[Chemical Formula 91]

[0108]

[Chemical Formula 92]

[0109]

[Chemical formula 93]

[0110]

[Chemical 94]

[0111]

[Chemical 95]

[0112]

[Chemical 96]

[0113]

[Chemical 97]

[0114]

[Chemical 98]

[0115]

[Chemical 99]

[0116]

[Chemical 100]

[0117]

[Chemical 101]

[0118]

[Chemical 102]

[0119]

[Chemical 103]

[0120]

[Chemical 104]

[0121]

[Chemical 105]

[0122]

[Chemical formula 106]

[0123]

[Chemical formula 107]

[0124]

[Chemical 108]

The polymer used in the present invention may be a copolymer containing, as a copolymerization component, another monomer copolymerizable with the above monomers. The other monomer is not particularly limited as long as it is a copolymerizable monomer, but specific examples include styrene, 4-hydroxystyrene, 2-hydroxystyrene, 4-chlorostyrene,
2-chlorostyrene, 2,3-dichlorostyrene, 4-
Bromostyrene, 2-bromostyrene, 4-iodostyrene, 2-iodostyrene, 4-carboxystyrene,
4-methylstyrene, α-methylstyrene, α-methyl-4-hydroxystyrene, α-methyl-2-hydroxystyrene, α-methyl-4-carboxystyrene, α
-Styrene compounds such as methyl-4-methylstyrene, α-methyl-4-chlorostyrene, α-trifluoromethylstyrene, α-trichloromethylstyrene, α-chlorostyrene, α-bromostyrene, α-cyanostyrene; Acrylic acid, methyl acrylate, ethyl acrylate, propyl acrylate, glycidyl acrylate, cyclohexyl acrylate, phenyl acrylate, benzyl acrylate, t-butylphenyl acrylate, cyclopentenyl acrylate, cyclopentanyl acrylate, acrylic Acrylic acid compounds such as acid dicyclopentenyl, isobornyl acrylate, adamantyl acrylate, dimethyl adamantyl acrylate; methacrylic acid, methyl methacrylate, ethyl methacrylate, propyl methacrylate, methacrylic acid Lysidyl, cyclohexyl methacrylate, phenyl methacrylate, benzyl methacrylate, t-butylphenyl methacrylate, cyclopentenyl methacrylate, cyclopentanyl methacrylate, dicyclopentenyl methacrylate, isobornyl methacrylate, Adamantyl methacrylate,
Methacrylic acid compounds such as dimethyl adamantyl methacrylate; acrylic acid amide compounds such as acrylic acid amide and its derivatives; methacrylic acid amide compounds such as methacrylic acid amide and its derivatives; maleic acid compounds such as maleic acid and its derivatives. Examples thereof include compounds, maleic anhydride compounds such as maleic anhydride and its derivatives, vinyl acetate, vinyl pyridine, acrylonitrile, fumaronitrile, vinylpyrrolidone, and vinylcarbazole.

The above-mentioned other copolymerizable monomers can be copolymerized within the range (generally 0 to 50 mol%) so as not to impair the alkali developability. The copolymer of the present invention can be obtained by a usual polymerization method such as radical polymerization or ionic polymerization, and the copolymer has a weight average molecular weight of 1,000 to 1,000,000. It is suitable.

(C) Carboxylic acid amide compound The carboxylic acid amide compound used in the present invention is not particularly limited as long as it is a compound having a carboxylic acid amide group. Specific examples of the carboxylic acid amide compound include:
Benzoic acid amide, benzoic acid methylamide, benzoic acid ethylamide, benzoic acid anilide, benzoic acid toluidide, benzoic acid naphthylamide, toluic acid amide, toluic acid methylamide, toluic acid anilide, dimethyl benzoic acid amide, dimethyl benzoic acid anilide, ethyl benzoic acid Amide, ethylbenzoic acid anilide, trimethylbenzoic acid amide, trimethylbenzoic acid anilide, chlorobenzoic acid amide, chlorobenzoic acid anilide, trifluoromethylbenzoic acid amide, trifluoromethylbenzoic acid anilide, pentafluorobenzoic acid amide, pentafluorobenzoic acid anilide , Cuminic acid amide, cuminic acid anilide, methoxybenzoic acid amide, methoxybenzoic acid anilide, trimethoxybenzoic acid amide, trimethoxybenzoic acid anilide, hydroxybenzoic acid De, hydroxybenzoic acid anilide,
Phthalic acid diamide, phthalic acid dianilide, isophthalic acid diamide, isophthalic acid dianilide, terephthalic acid diamide, terephthalic acid dianilide, trimellitic acid triamide, trimellitic acid trianilide, pyromellitic acid tetraamide, pyromellitic acid tetraanilide, naphthoic acid amide, naphthoe Acid methylamide, naphthoic acid ethylamide, naphthoic acid anilide, naphthoic acid toluidide,
Naphthoic acid naphthylamide, methylnaphthoic acid amide,
Methylnaphthoic acid anilide, hydronaphthoic acid amide,
Hydronaphthoic acid anilide, chloronaphthoic acid amide,
Chloronaphthoic acid anilide, naphthalenedicarboxylic acid amide, naphthalenedicarboxylic acid anilide, cholic acid amide, cholic acid anilide, dehydrocholic acid amide, dehydrocholic acid anilide, deoxycholic acid amide, deoxycholic acid anilide, acetanilide, propionic acid anilide, propion Acid toluidide, propionic acid naphthylamide, butyric acid anilide, capric acid anilide, margaric acid anilide, valeric acid anilide, lauric acid anilide, stearic acid anilide, caproic acid anilide, tridecylic acid anilide, trichloroacetic acid anilide, heptanoic acid anilide, myristic acid anilide. , Cyanoacetic acid anilide, caprylic acid anilide, palmitic acid anilide, cyclohexylacetic acid anilide, cyclohexylpropionic acid anilide Phenolpropionic acid anilide, diphenolic acid anilide, adamantanecarboxylic acid anilide, norbornane acetic acid anilide, oxalic acid diamide, maleic acid diamide, malonic acid diamide, fumaric acid diamide, succinic acid diamide, itaconic acid diamide, glutaric acid diamide, adipic acid Examples include diamide.

These carboxylic acid amide compounds may be used alone or in combination of two or more kinds. The proportion of the carboxylic acid amide compound (C) used in the present invention is usually 0.01 to 100 parts by weight, preferably 0.1 to 20 parts by weight, based on 100 parts by weight of the polymer (B). . If the blending ratio is less than 0.01 part by weight, the improvement effect due to the addition becomes insufficient, and 10
If the amount exceeds 0 parts by weight, the residual film rate may be reduced, and it may be difficult to form a resist pattern.

(D) Alkali-Soluble Phenolic Resin Examples of the alkali-soluble phenolic resin used in the present invention include condensation reaction products of phenols and aldehydes, condensation reaction products of phenols and ketones, and vinylphenol. Examples thereof include a polymer, an isopropenylphenol polymer, and a hydrogenation reaction product of these phenol resins.

Specific examples of phenols include monovalent phenols such as phenol, cresol, xylenol, ethylphenol, propylphenol, butylphenol and phenylphenol; polyhydric compounds such as resorcinol, pyrocatechol, hydroquinone, bisphenol A and pyrogallol. Phenols; and the like. Specific examples of the aldehydes include formaldehyde, acetaldehyde, benzaldehyde, terephthalaldehyde and the like. Specific examples of the ketones include acetone, methyl ethyl ketone, diethyl ketone, diphenyl ketone and the like. These condensation reactions can be performed according to a conventional method.

The vinylphenol polymer is selected from a homopolymer of vinylphenol and a copolymer of vinylphenol and a component copolymerizable with vinylphenol. Specific examples of the copolymerizable component include acrylic acid, methacrylic acid, styrene, maleic anhydride, maleic imide, and their derivatives, vinyl acetate, acrylonitrile, and the like. The isopropenylphenol-based polymer is selected from isopropenylphenol homopolymers and copolymers with a component copolymerizable with isopropenylphenol. Specific examples of the copolymerizable component include acrylic acid,
Methacrylic acid, styrene, maleic anhydride, maleic imide, and derivatives thereof, vinyl acetate, acrylonitrile and the like can be mentioned.

The hydrogenation reaction of these phenol resins can be carried out by any known method, and the phenol resin is dissolved in an organic solvent in the presence of a homogeneous or heterogeneous hydrogenation catalyst. , Can be achieved by introducing hydrogen. These alkali-soluble phenol resins may be used alone, or two or more kinds may be mixed and used. The mixing ratio of the alkali-soluble phenol resin (D) is usually 0 to 300 parts by weight, preferably 0 to 100 parts by weight with respect to 100 parts by weight of the polymer (B).
Parts by weight.

In order to improve developability, storage stability, heat resistance, etc., the resist composition of the present invention may contain, for example, a copolyester of styrene and acrylic acid, methacrylic acid or maleic anhydride. A combination, a copolymer of an alkene and maleic anhydride, a vinyl alcohol polymer, a vinylpyrrolidone polymer, rosin, shellac and the like can be added. The addition amount of these optional components is usually 0 to 50 parts by weight, preferably 0 to 20 parts by weight, relative to 100 parts by weight of the polymer (B).

(Resist Composition) The resist composition of the present invention is usually used by dissolving each of the above components in a solvent in order to form a resist film by coating on a substrate. Examples of the solvent include ketones such as acetone, methyl ethyl ketone, cyclohexanone, cyclopentanone, cycloheptanone, butyrolactone and 2-heptanone; n-propyl alcohol, iso-propyl alcohol, n-butyl alcohol, t-butyl alcohol and the like. Alcohols; ethylene glycol dimethyl ether, ethylene glycol diethyl ether, dioxane and other ethers; ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether and other alcohol ethers; propyl formate, formic acid Butyl, propyl acetate, butyl acetate, methyl propionate, ethyl propionate, methyl butyrate, ethyl butyrate, etc. Esters; 2-oxy-propionic acid, 2- oxy propionate, 2-methoxypropionate, methyl 2-methoxy propionate, 2
-Monooxycarboxylic acid esters such as ethyl ethoxypropionate; cellosolve esters such as cellosolve acetate, methyl cellosolve acetate, ethyl cellosolve acetate, propyl cellosolve acetate, butyl cellosolve acetate; propylene glycol,
Propylene glycols such as propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, propylene glycol monobutyl ether; diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol methyl ethyl ether, etc. Diethylene glycols; halogenated hydrocarbons such as trichloroethylene; aromatic hydrocarbons such as toluene and xylene; polar solvents such as dimethylacetamide, dimethylformamide, N-methylacetamide, N-methylpyrrolidone; These solvents may be used alone or in combination of two or more. The resist composition of the present invention may contain compatible additives such as a surfactant, a storage stabilizer, a sensitizer, a striation inhibitor, a plasticizer, and an antihalation agent, if necessary. it can.

As a developer for the resist composition of the present invention, an aqueous alkali solution is usually used. Specifically,
Inorganic alkalis such as sodium hydroxide, potassium hydroxide, sodium silicate, ammonia; ethylamine,
Primary amines such as propylamine; diethylamine,
Secondary amines such as dipropylamine; tertiary amines such as trimethylamine and triethylamine; alcohol amines such as diethylethanolamine and triethanolamine; tetramethylammonium hydroxide,
Quaternary ammonium salts such as tetraethylammonium hydroxide, trimethylhydroxymethylammonium hydroxide, triethylhydroxymethylammonium hydroxide, trimethylhydroxyethylammonium hydroxide; and the like. Further, if necessary, in the alkaline aqueous solution, for example, methanol,
An appropriate amount of a water-soluble organic solvent such as ethanol, propanol, or ethylene glycol, a surfactant, a storage stabilizer, a resin dissolution inhibitor, or the like can be added.

The resist composition of the present invention can be applied to the surface of a substrate such as a silicon wafer by a conventional method using the solvent solution thereof, and then the solvent is dried and removed to form a resist film. As a coating method, spin coating is particularly preferred. Also, the exposure is deep UV,
A fine pattern can be formed by using KrF excimer laser light, i-line (365 nm), or the like as a light source. It is preferable to perform a heat treatment (post-exposure bake) after the exposure, because the reaction is promoted and the sensitivity is improved and stabilized.

In the resist composition of the present invention, the polymer (B) undergoes the action of an acid derived from the compound (A) capable of generating an acid upon irradiation with actinic rays, and the solubility of the irradiated portion changes. . The resist composition of the present invention acts as a positive resist by using an alkaline developer. Since the resist composition of the present invention contains the carboxylic acid amide compound (C), generation of the hardly soluble layer on the surface portion of the resist pattern is suppressed, and the process margin is also improved. Further, when an alkali-soluble phenol resin is used in combination, the process margin is improved.

[0138]

EXAMPLES The present invention will be described in more detail with reference to the following examples. Parts and% in each example are based on weight unless otherwise specified.

Example 1 Copolymer of compound (8) and 4-hydroxystyrene 100 parts (Mw = 6500, copolymerization molar ratio = 48/52) Triphenylsulfonium triflate 5 parts Additives shown in Table 1. 5 parts Fluorosurfactant 0.01 part Propylene glycol monomethyl ether acetate 380 parts These are mixed and dissolved, and filtered through a tetrafluoroethylene filter (Teflon filter manufactured by Millipore) having a pore size of 0.1 μm to prepare a resist solution. did. After coating the above resist solution on a silicon wafer with a spinner, 1
Baking was performed at 10 ° C. for 90 seconds to form a resist film having a thickness of 1.0 μm.

A KrF excimer laser stepper NSR1755EX was used as a silicon wafer on which this resist film was formed.
8A (NA = 0.45, manufactured by Nikon Corporation) and a test reticle were used for exposure, left for 20 minutes, and then post-exposure baked at 90 ° C. for 60 seconds. Then, add 23 with a tetramethylammonium hydroxide aqueous solution (concentration 2.38%).
Development was carried out by a dipping method at 1 ° C. for 1 minute to obtain a positive type pattern. The patterned silicon wafer was taken out and observed with an electron microscope. The results are shown in Table 1. In the resists of the present invention examples (Experiment Nos. 1 to 5) to which the carboxylic acid compound was added as an additive, the formation of the surface hardly-solubilized layer was slight, and the resolution was a resist containing no additive (Experiment It was better than No. 6).

[0141]

[Table 1]

Example 2 Copolymer of Compound (47) and Styrene 100 parts (Mw = 12400, copolymerization molar ratio = 57/43) Triphenylsulfonium triflate 5 parts Additives shown in Table 2 3 parts Fluorine Surfactant 0.01 part Cyclohexanone 430 parts These were mixed and dissolved, and filtered through a tetrafluoroethylene filter (Teflon filter manufactured by Millipore) having a pore size of 0.1 μm to prepare a resist solution. After coating the above resist solution on a silicon wafer with a spinner, 1
Baking was performed at 10 ° C. for 90 seconds to form a resist film having a thickness of 0.70 μm.

A KrF excimer laser stepper NSR1755EX is used as a silicon wafer on which this resist film is formed.
Exposure was performed using 8A (NA = 0.45, manufactured by Nikon Corporation) and a test reticle, and immediately post-exposure bake was performed at 90 ° C. for 60 seconds. Then, it was developed by an immersion method in an aqueous solution of tetramethylammonium hydroxide at 23 ° C. for 1 minute, and the sensitivity was evaluated. Further, the same operation as described above was performed except that another silicon wafer coated with a resist was exposed by the same method, left for 20 minutes, and then post-exposure baked.

[0144] The ratio of the post-exposure immediately sensitivity when carrying out the post-exposure bake (E ⁰ _th) sensitivity when carrying out the post-exposure bake after left for 20 minutes for the _{^{(E 1 th) (E 1}} th /
E ⁰ _th ) was calculated and is shown in Table 2. As is clear from the results in Table 2, the inventive examples (Experiment Nos. 7 to 12) to which the carboxylic acid compound was added showed a change in sensitivity as compared with the case where no additive was added (Experiment No. 13). It turns out that is small.

[0145]

[Table 2] (Footnote) E ⁰ _th : Sensitivity when post-exposure bake is performed immediately after exposure E ¹ _th : Sensitivity when post-exposure bake is performed after leaving for 20 minutes after exposure

Example 3 Copolymer of Compound (7) and Styrene 100 Parts (Mw = 48000, Copolymerization Molar Ratio = 48/52) Bis (t-butylphenylsulfonyl) diazomethane 5 parts Anilide benzoate 3 parts Fluorine-based surfactant 0.01 part Propylene glycol monomethyl ether acetate 350 parts These were mixed and dissolved, and filtered with a tetrafluoroethylene filter (Teflon filter manufactured by Millipore) having a pore size of 0.1 μm to prepare a resist solution. After coating the above resist solution on a silicon wafer with a spinner, 1
Baking was performed at 10 ° C. for 90 seconds to form a resist film having a thickness of 1.0 μm.

A KrF excimer laser stepper NSR1755EX is used as a silicon wafer on which this resist film is formed.
8A (NA = 0.45, manufactured by Nikon Corporation) and a test reticle were used for exposure, and post exposure bake was performed at 90 ° C. for 60 seconds. Then, it was developed with a tetramethylammonium hydroxide aqueous solution at 23 ° C. for 1 minute by a dipping method to obtain a positive pattern. 48mJ / cm ² when evaluated for sensitivity
And the film thickness of the pattern is measured by the film thickness meter alpha step 20.
When measured with 0 (manufactured by Tenko Corp.), it was 0.92 μm. When the silicon wafer on which the pattern was formed was taken out and observed with an electron microscope, a 0.35 μm pattern was resolved, and a surface insoluble layer was not observed.

Example 4 Copolymer of Compound (46) and Methyl Methacrylate 100 Parts (Mw = 18000, Copolymerization Molar Ratio = 50/50) Triphenylsulfonium Triflate 5 Parts Hydroxybenzoylanilide 4 Parts Fluorine-based Surfactant 0.01 part Propylene glycol monomethyl ether acetate 450 parts These were mixed and dissolved, and filtered through a tetrafluoroethylene filter (Teflon filter manufactured by Millipore) having a pore size of 0.1 μm to prepare a resist solution. After applying the above resist solution on a silicon wafer with a spinner,
Baking was performed at 0 ° C. for 90 seconds to form a resist film having a thickness of 0.7 μm.

A KrF excimer laser stepper NSR1755EX was used as a silicon wafer on which this resist film was formed.
8A (NA = 0.45, manufactured by Nikon Corporation) and a test reticle were used for exposure, and post exposure bake was performed at 90 ° C. for 60 seconds. Then, it was developed with a tetramethylammonium hydroxide aqueous solution at 23 ° C. for 1 minute by a dipping method to obtain a positive pattern. Evaluated sensitivity is 38 mJ / cm ²
And the film thickness of the pattern is measured by the film thickness meter alpha step 20.
It was 0.63 μm when measured with 0 (manufactured by Tenko Corp.). When the silicon wafer on which the pattern was formed was taken out and observed with an electron microscope, a 0.30 μm pattern was resolved, and a surface insoluble layer was not observed.

[0150]

According to the present invention, there is provided a resist composition which is excellent in sensitivity, resolution, etching resistance, storage stability, process margin, and the like, and in which generation of a hardly soluble layer on the surface portion is suppressed. . The resist composition of the present invention is
In particular, it is suitable as a positive resist for fine processing of semiconductor elements.

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁶ Identification number Reference number within the agency FI Technical indication location G03F 7/033 H01L 21/027 (72) Inventor Mari Misawa 1-chome Yokko 1-chome, Kawasaki-ku, Kanagawa Prefecture No. 1 within ZEON CORPORATION

Claims (3)

[Claims] 1. A compound (A) which is capable of generating an acid upon irradiation with an actinic ray, and (B) which has a structural unit having an unstable group to an acid and which is derived from the compound (A). A polymer in which the group is cleaved in the presence to become alkali-soluble, and (C)
A resist composition comprising a carboxylic acid amide compound. 2. The resist composition according to claim 1, which further comprises (D) an alkali-soluble phenol resin. 3. The polymer (B) has, as a structural unit having an acid labile group, at least one selected from structural units represented by the following general formulas (I), (II) and (III). The resist composition according to claim 1 or 2, which contains different structural units. [Chemical 1] [In the formula, R ¹ and R ² are the same or different from each other and are a hydrogen atom, a halogen atom, a cyano group, an alkyl group having 1 to 5 carbon atoms, or a substituted alkyl group having 1 to 5 carbon atoms;
^3, linear acetal group, cyclic acetal group, a carbonate group, or -OR ^9,. However, R ⁹ is Or [Chemical 3] Is. (However, in these formulas, R ¹⁰ , R ¹¹ , R ¹² ,
R ¹³ , R ¹⁴ and R ¹⁵ are each independently a chain alkyl group, a substituted chain alkyl group, a branched alkyl group, a substituted branched alkyl group, a cyclic alkyl group, a substituted cyclic alkyl group,
It represents an alkenyl group, a substituted alkenyl group, an aryl group, a substituted aryl group, an aralkyl group, or a substituted aralkyl group, and of these, R ¹³ and R ¹⁴ may be hydrogen atoms. )] [Chemical 4] [In the formula, R ⁴ represents a hydrogen atom, a halogen atom, a cyano group,
An alkyl group having 1 to 5 carbon atoms or a substituted alkyl group having 1 to 5 carbon atoms, R ⁵ is Or Is. (However, in these formulas, R ¹⁰ , R ¹¹ , R ¹² ,
R ¹³ , R ¹⁴ and R ¹⁵ are each independently a chain alkyl group, a substituted chain alkyl group, a branched alkyl group, a substituted branched alkyl group, a cyclic alkyl group, a substituted cyclic alkyl group,
It represents an alkenyl group, a substituted alkenyl group, an aryl group, a substituted aryl group, an aralkyl group, or a substituted aralkyl group, and of these, R ¹³ and R ¹⁴ may be hydrogen atoms. )] [Chemical 7] [Wherein, R ⁶ and R ⁷ are the same or different from each other and represent a hydrogen atom, a halogen atom, a cyano group, an alkyl group having 1 to 5 carbon atoms, or a substituted alkyl group having 1 to 5 carbon atoms;
⁸ is Or Is. (However, in these formulas, R ¹⁰ , R ¹¹ , R ¹² ,
R ¹³ , R ¹⁴ and R ¹⁵ are each independently a chain alkyl group, a substituted chain alkyl group, a branched alkyl group, a substituted branched alkyl group, a cyclic alkyl group, a substituted cyclic alkyl group,
It represents an alkenyl group, a substituted alkenyl group, an aryl group, a substituted aryl group, an aralkyl group, or a substituted aralkyl group, and of these, R ¹³ and R ¹⁴ may be hydrogen atoms. )]