JP2000068807A - Antenna switch semiconductor integrated circuit - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve isolation characteristic between external connection terminals in a non-conductive state and to reduce the leakage of high frequency signals to an unwanted route by switching the conduction and non-conduction of a switch for performing a shut function. SOLUTION: In the case that a conductive route 10 to 11 is selected, a 6th switch 6 is in an on-state and 2nd, 3rd, 5th, 7th and 8th switches 2, 3, 5, 7 and 8 are in an off-state. 9th and 10th switches 38 and 39 are both turned on and function as shunt switches, and even when the high frequency signals impressed to the passing routes 10-11 leak through a parasitic capacity interposed in the 3rd and 5th switches 3 and 5 in the off-state and reach transmission connection terminals 9 and 12, leakage signals are reflected to the conductive route 10-11 by short-circuiting to a ground potential by the shunt switch. Thus, the isolation characteristic of the 3rd and 5th switches 3 and 5 in the off-state is improved and the reduction in the leakage to the unwanted route of the signals impressed to the conductive route 10-11 brings passing loss reduction.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a so-called antenna switch for switching between an antenna and a transmission / reception circuit of a communication device such as a cellular phone or a mobile communication device, and more particularly to a so-called antenna switch using a semiconductor integrated circuit. Concerning those with miniaturization and improved performance

[0002]

2. Description of the Related Art As an example of a conventional antenna switch semiconductor integrated circuit, there is a structure as shown in FIG. Hereinafter, the configuration and operation of the antenna switch semiconductor integrated circuit of FIG. 5 will be described with reference to FIG.

The antenna switch semiconductor integrated circuit shown in FIG. 5 includes an antenna switch circuit semiconductor chip 24 formed of a gallium arsenide semiconductor and a decoder and drive circuit semiconductor chip 23 formed of a silicon CMOS semiconductor.
The chip is mounted on the IC package 35, and between the two chips is I
They are interconnected by wire bonding in the C package. The antenna switch circuit semiconductor chip 24 includes a first
To 8th switches 1 to 8 to be connected to the outside of the antenna switch integrated circuit.

The connection with the outside is as follows: (1) One end of the third switch 3 is externally connected to, for example, a transmission section (not shown) of a mobile communication device via a DC blocking capacitor 25, and the other end is connected to the other end. External DC blocking capacitor 2
7 is connected to a transmission / reception antenna 32 built in, for example, a mobile communication device. (2) One end of the fourth switch 4 is externally connected to, for example, a transmission unit (not shown) of a mobile communication device via a DC blocking capacitor 25, and the other end is externally connected to a DC blocking capacitor 28.
Is connected to an external transmission / reception antenna terminal (not shown) provided in a casing of a mobile communication device, for example. (3) One end of the fifth switch 5 is externally connected to a receiving section (not shown) of a mobile communication device via a DC blocking capacitor 26, and the other end is externally connected to a DC blocking capacitor 28.
Is connected to an external transmission / reception antenna terminal (not shown) provided in a casing of a mobile communication device, for example. (4) One end of the sixth switch 6 is externally connected via a DC blocking capacitor 26 to, for example, a receiving section (not shown) of a mobile communication device, and the other end is externally connected to the DC blocking capacitor 2.
7 is connected to a transmission / reception antenna 32 built in the mobile communication device, for example. (5) One end of the seventh switch 7 is externally connected via a DC blocking capacitor 26 to, for example, a reception unit of the mobile communication device. (Not shown), and the other end is externally connected to a DC blocking capacitor 30.
Is connected to an external receiving antenna terminal (not shown) provided in a casing of the mobile communication device, for example. (6) One end of the eighth switch 8 is externally connected via a DC blocking capacitor 26 to, for example, a receiving section (not shown) of a mobile communication device, and the other end is externally connected to the DC blocking capacitor 2.
9 is connected to a receiving antenna 31 built in, for example, a mobile communication device. (7) One end of the first switch 1 is externally connected via a DC blocking capacitor 29 to, for example, a receiving antenna 31 incorporated in a mobile communication device, and the other end is connected to a seventh capacitor 3.
6 is grounded. (8) One end of the second switch 2 is externally connected via a DC blocking capacitor 27 to, for example, a transmitting / receiving antenna 32 built in a mobile communication device, and the other end is grounded via an eighth capacitor 37. Is done.

Each of these first to eighth switches is basically composed of the same semiconductor switch, and is represented by a circuit diagram shown in FIG. 7 as an example. In the figure, a gallium arsenide field effect transistor (hereinafter referred to as a GaAs FET) 60 that operates as a switch functions with the conduction and non-conduction characteristics of its drain and source electrodes.

The conduction and non-conduction characteristics of a small AC signal will be described below by taking a GaAs FET in a depletion mode as an example.
This state is achieved by applying a voltage V2 equal to or higher than the voltage V1 applied to the drain and source to the gate of T60, and the state between the terminals 61a and 61b is equivalent to conduction in an AC manner (ON). Present.

To obtain a non-conducting state, the GaAs FET 6
This is achieved by applying a voltage V2 which is lower than the voltage V1 applied to the drain and the source by a voltage difference corresponding to the pinch-off voltage of the GaAs FET 60 or a voltage V2 lower than the voltage V1 to the gate of the terminal 0a. 61
The state between the points b and b is AC-equivalent to non-conduction (OFF). For example, if V1 is 3V and the pinch-off voltage of the GaAs FET 60 is -1V, applying a voltage of 2V or less to V2 turns off the AC between the terminals 61a and 61b.

As described above, each of the first to eighth switches 1 to 8 in FIG. 5 controls the on / off of each switch by the gate potential of the corresponding GaAs FET, and this control voltage is applied to the silicon CMOS semiconductor. Generated by the formed decoder and drive circuit semiconductor chip 23.

In the decoder and drive circuit semiconductor chip 23, the terminals 17 to 1 shown in FIG.
9 is converted to a logical signal suitable for the combination of ON and OFF of the first to eighth switches 1 to 8 in FIG. 5, and a logical signal decoded by the decoder circuit is converted to a logical signal in FIG. 1st to 8th switches 1 in
A driver circuit that converts the voltage to an appropriate on / off voltage applied to the gate of the GaAs FET corresponding to
In the operation of the antenna switch integrated circuit of FIG. 5, the logical conversion shown in FIG. 6 is performed.

In the figure, the combination of the two types of numbers described in the conduction path column corresponds to the number assigned to the external connection terminal attached to the IC package 35 in FIG. Indicates that the external connection terminal 9 and the external connection terminal 12 are in a conductive state. The numbers written in the column of control signal input in FIG. 6 are the first to third control signal input terminals 17 to 19 attached to the IC package 35 in FIG.
In the table, “H” indicates a logical value High, and “L” indicates a logical value Low. Further, the numbers described in the column of the GaAs FET switch control signal correspond to the numbers 1 to 8 assigned to the first to eighth switches in the fifth antenna switch circuit semiconductor chip 24, and "ON" in the table corresponds to "ON". Is turned on, and “OFF” indicates that the corresponding switch is turned off.

A typical operation example will be described with reference to the logical conversion table shown in FIG. As an example of the connection, the internal transmitting / receiving antenna 32
, That is, in order to make the external connection terminal 10 and the external connection terminal 11 conductive, a logical value Low is applied to the first control signal input terminal 17 and a logical value Low is applied to the second control signal input terminal 18. Sets a logical value Low and a logical value High at the third control signal input terminal 19, respectively. FIG.
According to the table, the sixth switch 6 is turned on by the setting of the control signal input terminal, and the third switch 5, the fifth switch 5, and the seventh to eighth switches which become unnecessary paths.
When the switches 7 to 8 and the second switch 2 are all turned off, the receiving unit (not shown in FIG. 5) and the internal transmitting / receiving antenna 32 are connected independently. In this state, the internal receiving antenna 31 that is not used in this state is short-circuited to the ground potential in an AC manner through the seventh DC blocking capacitor 36 when the first switch 1 is turned on.
The switch 4 is turned on because it shares a logical value with the sixth switch 6.

By the decoding processing shown in FIG. 6 as in the above example, the antenna switch semiconductor integrated circuit of FIG. 5 can form six types of conduction paths.

[0013]

However, the above-mentioned conventional antenna switch semiconductor integrated circuit has the following problems.

The intended function of the antenna switch semiconductor is that when a specific path is conductive, an external receiving antenna, an external transmitting / receiving antenna, an internal receiving antenna, and four types of internal transmitting / receiving antennas connected to the terminals shown in FIG. And one of the receiving unit and the transmitting unit (not shown) is selected and interconnected. Therefore, there is always only one type of switch that turns on a plurality of switches connected to the specific path in the conductive state, and the other switches are non-conductive. However, a switch that is not directly connected to the conduction path is not necessarily in an off state. In such a switch that is in a non-conductive state, unnecessary signal leakage may occur, and this is usually treated as isolation characteristics. The greater the absolute value of the isolation of the switch in the non-conductive state, the better the antenna switch semiconductor is.

When the specific path is in the conductive state, the isolation characteristic to other non-conductive external connection terminals is reduced, and the isolation between the terminals that should be disconnected as the antenna switch is insufficient. It may cause trouble. Specifically, in the antenna switch semiconductor integrated circuit shown in FIG. 5, when transmission is performed using the internal transmission / reception antenna 32 as an example,
When the external connection terminal 9 and the external connection terminal 9 are in a conductive state, the external connection terminal 9 and the external connection terminal 10 are in a non-connected state due to the intermittent state of each switch element in the column of the conduction path 9-11 in FIG. Regardless, the isolation characteristic between the external connection terminal 9 and the external connection terminal 10 is 1 at a frequency of 1.5 GHz.
Only 6 dB can be obtained. For example, in the use of a mobile communication terminal, a part of the transmission power radiated from the transmission unit to the antenna leaks to the reception unit connection terminal 10 using the fourth switch 6 and the sixth switch 6 as main leakage paths, This may have an undesirable effect on the configuration of the device. In addition, in the same conductive path state as described above, a significant decrease in isolation characteristics is observed between the external connection terminal 9 and the external connection terminal 12 in the non-conductive state as compared with other non-conductive paths.

Further, when a specific path is in a conductive state, there is a problem that a passage loss is significantly increased as compared with a case where another path is in a conductive state. The above phenomenon is mainly caused by a decrease in the isolation characteristic of the specific non-conduction path, which deteriorates the passing loss of the conduction path in the related conduction state, and contributes to the performance degradation of the entire antenna switch.

Specifically, in the antenna switch semiconductor integrated circuit of FIG. 5, even if the gate width of a GaAs FET serving as a switch element is optimized in order to equalize the passage loss characteristics of each conduction path, as an example, an external transmitting / receiving antenna is used. 32, that is, when the external connection terminal 10 is used.
And the external connection terminal 12 has a conduction loss of 1.5 G
Hz is −1.2 dB at a frequency of Hz, but when reception is performed using the internal transmission / reception antenna 32, that is, the passage loss when the external connection terminal 10 and the external connection terminal 11 are in a conductive state is − There is a case where the passage loss increases to 1.7 dB.

The present invention has been devised in order to improve the above-described problems. The present invention prevents the characteristic degradation due to a specific conduction path from being degraded, reduces the passage loss of the conduction path, and further improves the isolation characteristic of the non-conduction path. An object of the present invention is to provide an improved antenna switch semiconductor integrated circuit.

[0019]

According to a first aspect of the present invention, there is provided an antenna switch semiconductor integrated circuit wherein a plurality of gallium arsenide field effect transistors are controlled in conduction and non-conduction according to a control signal from outside, and an external connection terminal is provided. Antenna switch semiconductor integrated on a gallium arsenide semiconductor chip so that connection between an external receiving antenna, an external transmitting / receiving antenna, an internal receiving antenna, and a receiving unit and a transmitting unit can be switched through the antenna. In the integrated circuit, when the receiver and any one of the antennas are connected on the gallium arsenide semiconductor chip, a switch formed of a field-effect transistor that sets the transmitter and the connection terminal to a circuit ground state, and an external transmission / reception antenna are provided. When both the transmission unit and the reception unit are in the cutoff state, the connection end to the external transmission / reception antenna And a switch made of a field effect transistor for bringing the circuit ground state, and, among the plurality of gallium arsenide field effect transistors provided on the gallium arsenide chip in response to a control signal from the outside, gallium arsenide to be turned on A decoder circuit for outputting a signal for selecting a field effect transistor; and a plurality of gallium arsenide field effect transistors provided on the gallium arsenide semiconductor chip in a conductive state and a non-conductive state according to an output signal of the decoder circuit. And a drive circuit for outputting a signal for forming the decoder circuit, the decoder circuit and the drive circuit are formed in a silicon CMOS integrated circuit, and formed on a chip separate from the gallium arsenide semiconductor chip, and together with the gallium arsenide semiconductor chip. It is characterized by being housed in the same IC package.

In the antenna switch semiconductor integrated circuit according to the second aspect, the plurality of gallium arsenide field effect transistors are controlled to be conductive or nonconductive according to a control signal from the outside, and are connected via an external connection terminal. In an antenna switch semiconductor integrated circuit integrated on a gallium arsenide semiconductor chip so that connection between an external receiving antenna, an external transmitting / receiving antenna, an internal receiving antenna, and an internal transmitting / receiving antenna and a receiving unit and a transmitting unit are switched,
On the gallium arsenide semiconductor chip, when a receiver and any one of the antennas are in a connected state, a switch composed of a field-effect transistor that sets a connection terminal with the transmitter to a circuit ground state, and an external transmission / reception antenna includes a transmitter and A switch composed of a field-effect transistor that sets the connection terminal with the external transmission / reception antenna to a circuit ground state when any of the reception units are in the cutoff state, and when the transmission unit is connected to the external transmission / reception antenna or the internal transmission / reception antenna, or When an antenna other than the external receiving antenna and the receiving unit are in a connected state, a switch made of a field-effect transistor that sets a connection terminal of the external receiving antenna to a circuit ground state is provided. Conduction among multiple gallium arsenide field effect transistors provided on the gallium arsenide chip A decoder circuit for outputting a signal for selecting a gallium arsenide field effect transistor to be turned on, and conducting a plurality of gallium arsenide field effect transistors provided on the gallium arsenide semiconductor chip in accordance with an output signal of the decoder circuit; A drive circuit for outputting a signal for making the transistor non-conductive, the decoder circuit;
The drive circuit is formed as a silicon CMOS integrated circuit,
It is formed on a chip separate from the gallium arsenide semiconductor chip, and housed in the same IC package together with the gallium arsenide semiconductor chip.

The decoder circuit and the drive circuit are integrated by a gallium arsenide integrated circuit, a silicon bipolar integrated circuit, a silicon BiCMOS integrated circuit or a silicon BiCMOS integrated circuit instead of a silicon CMOS integrated circuit. ) Are preferred.

[0022]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 shows an antenna switch semiconductor integrated circuit according to a first embodiment of the present invention, which will be described with reference to FIG. The same components as those in the conventional antenna switch semiconductor integrated circuit shown in FIG. 5 are denoted by the same reference numerals.

As in FIG. 5, the antenna switch semiconductor integrated circuit of FIG. 1 includes two chips, an antenna switch circuit semiconductor chip 24 formed of a gallium arsenide semiconductor and a decoder and drive circuit semiconductor chip 23 formed of a silicon CMOS semiconductor. It is mounted on an IC package 35, and the two chips are interconnected by wire bonding in the IC package. The antenna switch circuit semiconductor chip 24 includes first to tenth switches 1 to 10 and is connected to the outside of the antenna switch integrated circuit.

Connection to the outside: (1) One end of the third switch 3 is externally connected via a DC blocking capacitor 25 to, for example, a transmission unit (not shown) of a mobile communication device, and the other end is connected to the other end. External DC blocking capacitor 2
7 is connected to a transmission / reception antenna 32 built in, for example, a mobile communication device. (2) One end of the fourth switch 4 is externally connected to, for example, a transmission unit (not shown) of a mobile communication device via a DC blocking capacitor 25, and the other end is externally connected to a DC blocking capacitor 28.
Is connected to an external transmission / reception antenna terminal (not shown) provided in a casing of a mobile communication device, for example. (3) One end of the fifth switch 5 is externally connected to a receiving section (not shown) of a mobile communication device via a DC blocking capacitor 26, and the other end is externally connected to a DC blocking capacitor 28.
Is connected to an external transmission / reception antenna terminal (not shown) provided in a casing of a mobile communication device, for example. (4) One end of the sixth switch 6 is externally connected via a DC blocking capacitor 26 to, for example, a receiving section (not shown) of a mobile communication device, and the other end is externally connected to the DC blocking capacitor 2.
7 is connected to a transmission / reception antenna 32 built in the mobile communication device, for example. (5) One end of the seventh switch 7 is externally connected via a DC blocking capacitor 26 to, for example, a receiving section (not shown) of a mobile communication device, and the other end is externally connected to the DC blocking capacitor 3.
0, it is connected to an external receiving antenna terminal (not shown) provided in, for example, the housing of the mobile communication device. (6) One end of the eighth switch 8 is externally connected via a DC blocking capacitor 26 to, for example, a receiving section (not shown) of a mobile communication device, and the other end is externally connected to the DC blocking capacitor 2.
9 is connected to a receiving antenna 31 built in, for example, a mobile communication device. (7) One end of the first switch 1 is externally connected via a DC blocking capacitor 29 to, for example, a receiving antenna 31 incorporated in a mobile communication device, and the other end is connected to the first capacitor 1.
5 is grounded. (8) One end of the second switch 2 is externally connected via a DC blocking capacitor 27 to, for example, a transmitting / receiving antenna 32 built in a mobile communication device, and the other end is grounded via the second capacitor 16. Is done. (9) One end of the ninth switch 38 is externally connected to, for example, a transmission unit (not shown) of a mobile communication device via the DC blocking capacitor 25, and the other end is a DC blocking capacitor built in the IC. Grounded via 40. (10) One end of the tenth switch 39 is externally connected via a DC blocking capacitor 28 to an external transmitting / receiving antenna terminal (not shown) provided in, for example, a housing of a mobile communication device, and the other end is connected to the other end. Grounded via a DC blocking capacitor 41 built into the IC.

The functions of the above-mentioned switch elements are (1) to (8)
Until this is equivalent to the antenna switch semiconductor circuit of FIG. 5 described above, (9) and (10) are the operations by the newly added switch.

Each of the first to tenth switches is a semiconductor switch using a GaAs FET shown in the circuit diagram of FIG. 7 described above, and its conduction and non-conduction characteristics are as described above. Omitted.

In the decoder and drive circuit semiconductor chip 23, the terminals 17 to 1 shown in FIG.
9, a decoder circuit for converting a 3-bit logical signal into a logical signal sufficient for the combination of ON and OFF of the first to eighth switches 1 to 8 and 38 and 39 in FIG. 5, and a logical signal decoded by the decoder circuit 1 is a driver circuit for converting an appropriate on / off voltage applied to the gates of GaAs FETs corresponding to the first to tenth switches 1 to 8 and 38 and 39 in FIG. 1, and the antenna switch integrated circuit of FIG. 2 performs the logical conversion shown in FIG. The combination of the two types of numbers described in the conduction path in FIG. 2 corresponds to the number assigned to the external connection terminal attached to the IC package 35 in FIG.
If -12 is written, the external connection terminals 9 and 12
Indicates that the state becomes conductive. Also, in FIG. 2, the numbers described in the column of the switching input signal represent the first to third control signal input terminals 17 to 19 attached to the IC package 35 in FIG.
“H” in the table indicates a logical value High, and “L” indicates a logical value Lo.
means w. Further, the numbers written in the column of the GaAs FET switch control signal correspond to the numbers 1 to 8 assigned to the first to eighth switches inside the antenna switch circuit semiconductor chip 24 in FIG. The corresponding switch is turned on, and “OFF” indicates that the corresponding switch is turned off.

A case in which the performance of the present invention is improved will be described below. First, when transmission is performed using the internal transmission / reception antenna 32, that is, when the external connection terminal 11 and the external connection terminal 9 are in a conductive state, the conductive path 9-11 in FIG.
4th switch 4 from the intermittent state of each switch element
And the sixth switch 6 are both in the off state, and are not in the direct passage path.
9 turn on. The ON state of the tenth switch 39 indicates that the external transmission / reception antenna connection terminal 12 is short-circuited to the ground potential via the tenth switch 39 and the second built-in capacitor 41. Functions as a so-called shunt switch.

For example, in the use of a mobile communication terminal, a part of the transmission power radiated from the transmission unit to the antenna via the conduction path 9-11 is transmitted to the fourth switch 4 and the sixth switch 4.
Even if the signal leaks to the receiving unit connection terminal 10 via the parasitic capacitance interposed in the switch of FIG. 39, the signal is short-circuited to the ground potential.
It is reflected by 1. By utilizing the reflection characteristics of the shunt switch, the high-frequency leakage of the fourth switch 6 and the sixth switch 6 is reduced as a result, in other words, the isolation characteristics are improved. In the comparison of the characteristics between the two antenna switch semiconductor integrated circuits of FIG. 5 which is the conventional circuit configuration and FIG. 1 which is the inventive circuit configuration, the external connection terminal 11 and the external connection terminal 9 are in a conductive state. The isolation with the external connection terminal 10 in the state is 16 d in the conventional circuit at a frequency of 1.5 GHz.
B is improved to 36 dB in the circuit of the present invention.

Next, the conduction path will be described. When the conduction path 10-11 is selected in FIG. 1, which is the inventive circuit, and referring to FIG. 2, which shows the state of each switch semiconductor element, the sixth switch serving as the conduction path is in the ON state. The second, third, fifth, seventh, and eighth switches connected to the other conduction paths 10-11 are necessarily in an off state. Further, the added ninth and tenth switches are turned on, and the external connection terminals 9 and 12 are connected to the capacitor 4.
Grounded via 0, 41. In this case, the ninth and tenth switches function as shunt switches, and
Even if the high-frequency signal applied to 0-11 leaks via the parasitic capacitance interposed in the third and fifth switches in the off state and reaches the external connection terminals 9 and 12, the shunt switch causes the high-frequency signal to reach the ground potential. The short circuit results in the leakage signal being reflected back to the conduction path 10-11. Due to this effect, the isolation characteristics of the third and fifth switches in the off state are improved, and the leakage of the signal applied to the conduction path 10-11 to the unnecessary path is reduced.
This results in a reduction in pass loss of 0-11. As an embodiment:
In the measurement of the transmission loss of the high-frequency signal of 5 GHz, the value was -1.7 dB in the conventional circuit configuration of FIG. 5, but is improved to -0.8 dB in the circuit configuration of the present invention in FIG. 1.

As a second embodiment, the circuit shown in FIG. 3 can also be configured. The difference between the circuits of FIG. 1 and FIG. 3 is that one end of the eleventh switch is externally connected via a DC blocking capacitor 30 to, for example, an external receiving antenna terminal (not shown) provided in a housing of a mobile communication device. ), And the other end is grounded via a DC blocking capacitor 34 built in the IC.

With the addition of this function, the decoder circuit corresponds to the logical conversion shown in FIG. In this circuit configuration, when performing reception using an external receiving antenna (not shown), that is, as long as the external connection terminal 14 and the external connection terminal 10 are in a conductive state,
The eleventh switch 33 is turned off from the intermittent state of each switch element in the column of the conduction path 10-14 in FIG. 4, and the eleventh switch 33 is turned off in all other conduction paths.

Therefore, when the conduction path 10-14 is out of conduction, the isolation characteristics with respect to the external connection terminal 14 are improved, and any one of the conduction paths 10-11, 10-12, and 10-13 passes when conducting. Loss can be reduced.

[0034]

As described above, according to the present invention, Ga
In an antenna switch semiconductor integrated circuit using AsFET, switches for performing a shunt function connected to a specific external connection terminal are provided, and conduction of these switches is performed.
By switching the non-conduction with an appropriate logic state, the isolation characteristics between the external connection terminals in a specific non-conduction state are improved, and the leakage of a high-frequency signal to an unnecessary path can be reduced.

With the same configuration, the effect of reducing the passage loss between the external connection terminals in a specific conduction state can be obtained, and the difference in the passage loss due to the difference in the conduction path can be reduced.

[Brief description of the drawings]

FIG. 1 is a circuit diagram illustrating a first circuit configuration example according to an embodiment of the present invention.

FIG. 2 is an explanatory diagram illustrating operations of first to tenth switches in response to a logical signal input to a control input terminal in a first circuit configuration example.

FIG. 3 is a circuit diagram illustrating a second circuit configuration example according to the embodiment of the present invention;

FIG. 4 is an explanatory diagram showing operations of first to eleventh switches in response to a logical signal input to a control input terminal in a second circuit configuration example.

FIG. 5 is a circuit diagram showing a circuit configuration example of a conventional antenna switch semiconductor integrated circuit.

6 is a diagram illustrating a first example of a logic signal input to a control input terminal in the antenna switch semiconductor integrated circuit illustrated in FIG.
It is explanatory drawing showing operation | movement of-8th switch.

FIG. 7 shows first to eighth switches used in the antenna switch semiconductor integrated circuit shown in FIGS. 1 and 3, and FIG.
FIG. 14 is a circuit diagram illustrating a configuration example of ninth and tenth switches illustrated in FIG. 3 and a semiconductor switch configuring the eleventh switch illustrated in FIG. 3.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 1st switch 2 2nd switch 3 3rd switch 4 4th switch 5 5th switch 6 6th switch 7 7th switch 8 8th switch 9 Transmitter connection terminal 10 Receiver connection terminal REFERENCE SIGNS LIST 11 internal transmitting / receiving antenna connection terminal 12 external transmitting / receiving antenna connection terminal 13 internal reception antenna connection terminal 14 external reception antenna connection terminal 15 first shunt ground terminal 16 second shunt ground terminal 17 first control signal input terminal 18 second Control signal input terminal 19 Third control signal input terminal 20 Power supply input terminal 21 DC power supply 22 Ground terminal 23 Decoder and drive circuit semiconductor chip 24 Antenna switch circuit semiconductor chip 25 First DC blocking capacitor 26 Second DC blocking capacitor 27 Third DC blocking capacitor 28 Fourth DC blocking capacitor Capacitor 29 fifth DC blocking capacitor 30 sixth DC blocking capacitor 31 internal receiving antenna 32 internal transmitting / receiving antenna 33 eleventh switch 34 third built-in capacitor 35 antenna switch integrated circuit package 36 seventh DC blocking capacitor 37 eighth DC blocking capacitor 38 Ninth switch 39 Tenth switch 40 First internal capacitor 41 Second internal capacitor

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 5J055 AX05 AX06 AX28 BX11 CX10 CX26 DX25 DX44 DX48 EY01 EY10 EZ38 GX01 GX02

Claims (5)

[Claims] A plurality of gallium arsenide field effect transistors are controlled in conduction and non-conduction according to a control signal from the outside, and are connected via an external connection terminal to an external receiving antenna, an external transmitting / receiving antenna, and an internal receiving device. In an antenna switch semiconductor integrated circuit which is integrated on a gallium arsenide semiconductor chip so that connections between an antenna and an internal transmission / reception antenna and a reception unit and a transmission unit are switched,
On the gallium arsenide semiconductor chip, when a receiver and any one of the antennas are in a connected state, a switch made of a field-effect transistor that sets a connection terminal with the transmitter to a circuit ground state, and an external transmission / reception antenna includes a transmitter and a transmitter. A switch comprising a field-effect transistor for setting a connection terminal to an external receiving antenna to a circuit ground state when any of the receiving units is in a cutoff state, and provided on the gallium arsenide chip in response to a control signal from the outside. A decoder circuit for outputting a signal for selecting a gallium arsenide field effect transistor to be brought into a conductive state from the plurality of gallium arsenide field effect transistors, and a gallium arsenide semiconductor chip in accordance with an output signal of the decoder circuit. A plurality of gallium arsenide field effect transistors provided for conducting and non-conducting. A drive circuit for outputting a signal,
Wherein the decoder circuit and the drive circuit are formed into a silicon CMOS integrated circuit, formed on a chip separate from the gallium arsenide semiconductor chip, and housed in the same IC package together with the gallium arsenide semiconductor chip. Features. A plurality of gallium arsenide field effect transistors whose conduction and non-conduction are controlled according to an external control signal, and which are connected via an external connection terminal; In an antenna switch semiconductor integrated circuit which is integrated on a gallium arsenide semiconductor chip so that connections between an antenna and an internal transmission / reception antenna and a reception unit and a transmission unit are switched,
On the gallium arsenide semiconductor chip, when a receiver and any one of the antennas are in a connected state, a switch composed of a field-effect transistor that sets a connection terminal with the transmitter to a circuit ground state, and an external transmission / reception antenna includes a transmitter and A switch composed of a field-effect transistor that sets the connection terminal with the external transmission / reception antenna to a circuit ground state when any of the reception units are in the cutoff state, and when the transmission unit is connected to the external transmission / reception antenna or the internal transmission / reception antenna, or A switch formed of an electric field transistor for setting a connection terminal of the external receiving antenna to a circuit ground state when an antenna other than the external receiving antenna and the receiving unit are in a connected state, and the gallium transistor according to a control signal from the outside. Conduction state of multiple gallium arsenide field effect transistors provided on the arsenic chip A decoder circuit for outputting a signal for selecting a gallium arsenide field effect transistor to be turned on, and turning on and off a plurality of gallium arsenide field effect transistors provided on the gallium arsenide semiconductor chip in accordance with an output signal of the decoder circuit. And a drive circuit for outputting a signal for setting a state. The decoder circuit and the drive circuit are formed on a silicon CMOS integrated circuit, and formed on a chip separate from the gallium arsenide semiconductor chip. Same I with semiconductor chip
It is characterized by being housed in a C package. 3. The antenna switch semiconductor integrated circuit according to claim 1, wherein all the constituent circuits including the decoder and the driver circuit are integrated on a gallium arsenide semiconductor chip. 4. The antenna switch semiconductor integrated circuit according to claim 1, wherein a silicon bipolar integrated circuit is used instead of the silicon CMOS integrated circuit. 5. BiC instead of silicon CMOS integrated circuits
3. The antenna switch semiconductor integrated circuit according to claim 1, wherein a MOS integrated circuit is used.