JP2000061255A - Exhaust gas treatment in semiconductor manufacturing industry and device therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an exhaust gas treating method in semiconductor manufacturing industry and a device for performing this method in which an accident such as an explosion on replacement work of treating material is prevented to remarkably improve the safety on the work concerning an exhaust gas treating method and device therefor in semiconductor manufacturing industry by, after the breakthrough or its vicinity of a catalyst or adsorbent (treating material) is reached, before the replacement of the treating material, shutting out formed material formed in a treating vessel. SOLUTION: When replacing treating materials filled into a treating vessel 6 into which exhaust gas in the semiconductor manufacturing industry is introduced, formed material formed in the treating vessel 6 is purged by compressed air or the like fed from a formed material purge device, and after that, the treating material 5 is replaced, thereby smoothly and safely performing the replacement of the treating material 5.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and apparatus for treating exhaust gas in the semiconductor manufacturing industry for detoxifying exhaust gases in the semiconductor manufacturing industry containing harmful substances, and more particularly to a catalyst or an adsorbent in a processing container having a breakthrough point. Or an exhaust gas treatment method of a semiconductor manufacturing industry and its device for discharging the generated substances generated in the processing container from the processing container until it is replaced with an active catalyst or an adsorbent after reaching the vicinity thereof. Regarding

[0002]

2. Description of the Related Art Generally, a semiconductor device or a semiconductor integrated circuit is formed by forming a semiconductor cylinder, slicing the semiconductor cylinder to form a semiconductor wafer, and then repeating masking, thin film formation, doping, etching, etc. on the semiconductor wafer. A large number of semiconductor elements or semiconductor integrated circuits are formed, and thereafter, the semiconductor wafer is cut in the vertical and horizontal directions.

As semiconductors used in semiconductor elements or semiconductor integrated circuits, germanium (Ge) and silicon (Si) are available.
Is often used, and gallium arsenide (GaAs) and gallium phosphide (GaP) are also used depending on the application.

In the manufacturing process of this semiconductor device or semiconductor integrated circuit, harmful substances, which are themselves prohibited from being emitted from the viewpoint of pollution prevention, are used or produced as raw materials or processing materials. , A gas containing this harmful substance is generated.

The harmful substance itself is 0.01 to 50.
It forms fine particle dust that floats in the air of about μm,
It is attached to, adsorbed on, or sorbed to such fine particle dust and floats in the air, or exists as a gas itself.

Hazardous substances generated in the semiconductor manufacturing process include silicon-based harmful substances, arsenic-based harmful substances, phosphorus-based harmful substances, boron-based harmful substances, metal-hydrogen-based harmful substances, fluorine-based harmful substances, halogens, halides, There are nitrogen oxides and others.

As a silicon-based harmful substance, monosilane
(SiH ₄ ), dichlorosilane (SiHCl ₂ ), silicon trichloride (SiHCl 4
₃ ), silicon tetrachloride (SiCl ₄ ), silicon tetrafluoride (SiF ₄ ), disilane (Si ₂ H ₄ ), TEOS (Si (OC ₂ H ₅ ) ₄ ) and the like are typical.

As arsenic-based harmful substances, arsine (As
H ₃ ), arsenic fluoride (III) (AsF ₃ ), arsenic chloride (III) (AsCl
₃ ) and arsenic chloride (V) (AsCl ₅ ) are typical. Phosphine-based harmful substances include phosphine (PH ₃ ), phosphorus fluoride (V) (PF ₅ ), and phosphorus (III) chloride (PCl). ₃ ), phosphorus chloride (V) (P
Cl ₅ ) and phosphorus oxychloride (POCl ₃ ) are typical.

As the boron-based harmful substance, diborane (B ₂ H
₆ ), boron trifluoride (BF ₃ ), boron trichloride (BCl ₃ ), boron tribromide (BBr ₃ ), etc. are typical, and hydrogen selenide (H ₂ Se), Monogerman (Ge
H ₄ ), hydrogen telluride (H ₂ Te), stibine (SbH ₃ ), tin hydride
(SnH ₄ ) is typical.

Fluorine-based harmful substances include tetrafluoromethane (CF ₄ ), trifluoromethane (CHF ₃ ), and difluoromethane (CH _2).
F ₂ ), hexafluoropropane (C ₃ H ₂ F ₆ ), octafluoropropane (C
₃ F ₈ ) is an example.

Halogens and halides which are harmful substances include fluorine (F ₂ ), hydrogen fluoride (HF), chlorine (Cl ₂ ),
Hydrogen chloride (HCl), carbon tetrachloride (CCl ₄ ), hydrogen bromide (HBr),
Nitrogen trifluoride (NF ₃ ), sulfur tetrafluoride (SF ₄ ), sulfur hexafluoride (SF ₆ ), tungsten hexafluoride (V) (WF ₆ ), molybdenum hexafluoride (VI) (MoF ₆ ). , Germanium tetrachloride (GeC
l ₄ ), tin tetrachloride (SnCl ₄ ), antimony pentachloride (V) (SbC
Typical examples are l ₅ ), tungsten hexachloride (VI) (WCl ₆ ), and molybdenum hexachloride (MoCl ₆ ).

Nitrogen oxides, which are harmful substances, include nitric oxide (NO), nitrogen dioxide (NO ₂ ), dinitrogen monoxide (N ₂ O), etc., and other harmful substances are hydrogen sulfide. (H
₂ S), ammonia (NH ₃ ), trimethylamine ((CH ₃ ) ₃ N)
Can be mentioned as an example.

In addition to this, ethane (C ₂ H ₆ ) having flammability,
Propane (C ₃ H _8), or even nitrogen (N _2), oxygen (O _2), argon (Ar), carbon dioxide (CO ₂₎ that particles of dust are generated in an atmosphere that contains such intellectual Has been.

In general, harmful substances or dangerous substances used or generated in the semiconductor manufacturing industry are enclosed in a special compartment or used in order to prevent their emission to the surroundings. It is designed to be generated indoors.

The specially divided chambers include, for example, a vapor phase growth processing chamber in a semiconductor pillar forming process, a plasma vapor phase growth processing chamber, a thin film forming processing chamber in an element forming process,
Typical examples thereof include a doping processing chamber, an etching processing chamber, a plasma etching processing chamber, a cleaning processing chamber in each process or a cleaning process between each process, and the like.

In the present invention, a chamber specially partitioned for preventing the emission of harmful substances or dangerous substances used or generated in the semiconductor manufacturing industry to the surroundings is called an exhaust gas source. The gas emitted from the exhaust gas source is called exhaust gas.

In the present age when the spirit of air pollution prevention or pollution prevention is being thoroughly enforced, it is not allowed to diffuse this exhaust gas into the atmosphere as it is. For example, as shown in FIG. Air pump 1
At 02, the exhaust gas containing harmful substances and dangerous substances is taken out, dust is removed from the exhaust gas by the dust collector 103, and the harmful substances are decomposed by the harmful component removing device 104.
It is required to perform a treatment such as oxidation, reduction, sorption, adsorption and the like to produce a safe and clean gas and release it (see Japanese Patent Application Laid-Open No. 7-116450).

As the dust collector 103, a known dust collector such as a cyclone, a scrubber, a venturi scrubber, a bag filter, an electric dust collector, a louver or a sedimentation chamber may be used. The applicant's prior application (Japanese Patent Application No. 5-113927), which has a small diameter, a high dust collecting capability, and a small laying area.
It is recommended to use the fine particle dust treatment device according to the above.

The harmful component removing device 104 contains a processing container 106 for containing a processing material (catalyst or adsorbent) 105 for processing harmful substances contained in the exhaust gas generated by the exhaust gas source 101, and a dust collector 103. An introduction pipe 107 for guiding exhaust gas from the processing container 106 to the processing container 106, and the processing container 10
Exhaust pipe 10 for discharging treated exhaust gas to the atmosphere from 6
8, an inlet valve 109 that opens and closes the introduction pipe 107, and an outlet valve 110 that opens and closes the exhaust pipe 108.

The treating material 105 is the exhaust gas source 101.
The exhaust gas generation source is composed of a catalyst for decomposing harmful substances and dangerous substances contained in the exhaust gas generated in 1. and an adsorbent for adsorbing the harmful substances, and after opening the inlet valve 109 and the outlet valve 110, the air pump 102 The exhaust gas generated in 101 is introduced into the processing container 106 through the introduction pipe 107, and the harmful substances in the exhaust gas are mainly decomposed by the catalyst, and the adsorbent adsorbs the harmful substances to form a safe and clean gas. The gas is emitted to the atmosphere via the exhaust pipe 108.

As this treatment progresses, the action of the catalyst or the adsorbent gradually decreases, and when the treatment amount reaches a certain amount, that is, the breakthrough point or its vicinity, the exhaust gas containing harmful substances or dangerous substances is exhausted. Since there is a risk of being discharged from 108, the inlet valve 109 is closed to prevent new exhaust gas containing harmful substances from flowing into the processing container 103, while the outlet valve 110 is closed to treat untreated gas. Prevent exhaust gas from being released into the atmosphere.

After closing the inlet valve 109 and the outlet valve 110, the harmful substances in the processing container 106 are removed from the processing material 105.
The exhaust gas in the processing container 106 to be sufficiently harmless, and thereafter, for example, when two processing containers 106 are provided, the inlet valve 109 of the processing container 106 which has not been broken through.
And the outlet valve 110 for continuous operation, or after waiting for a semiconductor manufacturing process to be suspended such as on weekends and holidays, the processing container 106 is replaced and opened at a predetermined location to open the used processing material 105. Is replaced with a new processing material 105.

[0023]

By the way, if the processing by the processing container 106 is stopped after the processing material 105 in the processing container 106 breaks through and the processing container 106 is replaced for a long time, The generated gas adsorbed or adhered to the processing material 105 is separated and accumulated in the processing container 106, and as a result, the pressure in the processing container 106 rises,
Gas is ejected when the processing container 106 is opened when the catalyst or the adsorbent is replaced. Therefore, the composition of the ejected gas was analyzed to confirm the safety, and it was found that the hydrogen gas concentration was extremely high.

The cause is that oxygen (O ₂ ) necessary for the reaction is sufficient when decomposing and removing hazardous substances such as harmful substances and flammable gases using a catalyst or an adsorbent. Nevertheless, it is understood that the reaction does not proceed ideally and a part of hydrogen gas decomposed from monosilane (SiH ₄ ) or the like is released without binding to oxygen to generate hydrogen gas.

By the way, the hydrogen gas is introduced into the inlet valve 109.
Even if the outlet valve 110 is opened, while the exhaust gas is passing through the hazardous substance treatment device 104, the exhaust passage 1 is gradually removed.
However, when the inlet valve 109 and the outlet valve 110 are closed, the hydrogen gas adsorbed on or adhered to the processing material 105 is gradually separated, so that the inside of the processing container 106 concerned is gradually separated. The concentration of hydrogen gas rises, and may exceed the lower limit of explosion of hydrogen gas to reach the flammable region and the explosive region.

As a result, when some kind of ignition energy (flame) is present when opening the processing container 106, for example, a lighter fire accidentally ignited, a cigarette smoke carelessly smoked, an electrostatic spark, or the like, explodes. I found that there is a risk of doing so.

The present invention has been completed on the basis of such knowledge, and after the catalyst or the adsorbent reaches the breakthrough point or its vicinity by the treatment of harmful substances or dangerous substances, the treatment container is When exchanging, continuously and automatically removing the generated substances generated in the processing container from the processing container until the catalyst or the adsorbent reaches the breakthrough point or its vicinity until just before the processing container is replaced. Due to
An exhaust gas treatment method in the semiconductor manufacturing industry (hereinafter, referred to as the method of the present invention) that prevents accidents such as an explosion at the time of the replacement work and significantly improves work safety, and a method for carrying out the method of the present invention. An object of the present invention is to provide an exhaust gas treatment device in the semiconductor manufacturing industry (hereinafter, referred to as the device of the present invention).

[0028]

In the method of the present invention,
Introduce exhaust gas containing hazardous or dangerous substances used or generated in the semiconductor manufacturing industry into the processing container, and decompose or adsorb the harmful or hazardous substances in the exhaust gas with the catalyst or adsorbent in this processing container before processing. In the exhaust gas treatment method of the semiconductor manufacturing industry that releases gas into the atmosphere, the following technical measures are taken to achieve the above object.

That is, after the catalyst or the adsorbent in the processing container reaches the breakthrough point or the vicinity thereof by the treatment of the harmful substance or the dangerous substance, the catalyst or the adsorbent is replaced when the processing container is replaced. Or, a technical means of continuously and automatically ejecting the generated substance generated in the processing container from the processing container after reaching the vicinity thereof until just before the replacement of the processing container is adopted.

Further, in the apparatus of the present invention, the exhaust gas treatment of the semiconductor manufacturing industry is provided with a processing container containing a catalyst or an adsorbent for decomposing or adsorbing harmful substances or hazardous substances contained in the exhaust gas generated from the exhaust gas source. In the device,
In order to achieve the above-mentioned object, the following technical measures are taken.

That is, after the catalyst or the adsorbent in the processing container reaches the breakthrough point or its vicinity by the treatment of the harmful substances or the dangerous substances, the catalyst and the adsorbent in the processing container are exchanged. Or, the technical means of providing a product substance purging device for continuously and automatically rejecting the product substance produced in the treatment container from the treatment container until the adsorbent is replaced.

In this case, as the exhaust gas treating apparatus of the semiconductor manufacturing industry, the exhaust gas treating apparatus is a catalyst or an adsorbent for decomposing or adsorbing harmful substances or dangerous substances contained in the exhaust gas generated from the exhaust gas source. A processing container that has been stored, an introduction pipe that guides the exhaust gas from the exhaust gas source to the processing container, an exhaust pipe that discharges the treated exhaust gas from the processing container into the atmosphere, and an inlet valve that opens and closes the introduction pipe, One that includes an outlet valve that opens and closes the exhaust pipe.

The method and apparatus of the present invention will be described in more detail below. The exhaust gas to be treated by the method of the present invention and the device of the present invention is an exhaust gas containing a harmful substance or a hazardous substance used or generated in the semiconductor manufacturing industry, used in the semiconductor manufacturing process, or a harmful substance generated or Not only exhaust gas containing a hazardous substance, but also exhaust gas containing a hazardous substance or a hazardous substance that is used or produced in association with semiconductor manufacturing is generated.

As described above, the harmful substances and dangerous substances used or generated in the semiconductor manufacturing industry are silicon-based harmful substances, arsenic-based harmful substances, phosphorus-based harmful substances, boron-based harmful substances, and metal-hydrogen-based harmful substances. , Fluorine-based harmful substances, halogens, halides, nitrogen oxides, and others. In addition, nitrogen (N
₂ ), Oxygen (O ₂ ), Argon (Ar), Carbon Dioxide (CO ₂ ) and other exhaust gases are also included as harmful substances. Typical examples of dangerous substances are flammable ethane (C ₂ H ₆ ), propane (C ₃ H ₈ ), and the like.

In the method of the present invention, it is possible to directly connect the processing container to the exhaust gas source, but in preparation for the replacement of the processing material contained in the processing container, the exhaust gas source may be connected to the processing container. It is preferable that a processing container is connected to the exhaust gas generation source through an introduction pipe so that the inflow of the exhaust gas can be blocked, and an inlet valve for opening and closing the introduction pipe is interposed in the introduction pipe.

Therefore, it is desirable that the apparatus of the present invention includes an introduction pipe for guiding the exhaust gas from the exhaust gas source to the processing container, and an inlet valve for opening and closing the introduction pipe.

Of course, the processing material stored in the processing container,
That is, in order to prevent clogging of the catalyst or the adsorbent for a long period of time, and to collect dust that is harmful substance itself or harmful substance, adsorbed, or sorbed dust,
It is preferable to interpose a dust collector between the exhaust gas source and the processing container.

A cyclone, a scrubber, a venturi scrubber, a bag filter, an electric dust collector, a louver, a settling chamber, or the like may be used as the dust collector, but the particle diameter that can be collected is smaller than these and the dust collecting ability is larger. Is high,
The applicant's earlier application (Japanese Patent Application No. 5-1
It is preferable to use the fine particle dust treatment device according to the specification (No. 13927).

The shape of the processing container is not particularly limited as long as it is a hollow shape capable of accommodating the processing material therein and allowing the exhaust gas to pass therethrough. Specifically, for example, the vertical axis and the horizontal axis. Alternatively, it may be formed in a cylindrical shape with an inclined shaft. This cylindrical shape includes a cylindrical shape, an elliptic cylindrical shape, a triangular shape, a polygonal rectangular shape such as a square shape, a pentagonal shape, a hexagonal shape, a hexagonal shape, a hexagonal shape, and an octagonal shape. In order to achieve this, it is preferable to form it in a cylindrical shape, and it is preferable that the introduction pipe and the exhaust pipe are connected to the axial center of the cylindrical shape at both ends of the cylindrical shape.

Further, the capacity of the processing container is not less than a capacity capable of accommodating an amount of a processing material required to detoxify harmful substances or dangerous substances, or harmful substances and dangerous substances in exhaust gas over a predetermined period. Good.

Further, the material of the processing container is not particularly limited, but those having airtightness, chemical resistance, acid resistance, alkali resistance, weather resistance and sufficient mechanical strength are preferable, for example, fiber reinforced synthetic resin. (FRP), iron subjected to anticorrosion treatment such as rubber lining and resin lining, and corrosion resistant metal such as aluminum and stainless steel. Among these, those which are easy or unnecessary to clean the inside and outside are more preferable, and from this viewpoint, stainless steel is preferably used.

As the processing material housed in this processing container, a processing material conventionally used for processing harmful substances or dangerous substances in the semiconductor processing step may be used. Specifically,
For example, one or both of a catalyst that decomposes harmful substances and dangerous substances in exhaust gas and an adsorbent that adsorbs harmful substances and dangerous substances in exhaust gas are used.

As this catalyst, metal phosphates such as aluminum phosphate, aluminosilicates, alkali metal silicates, platinum catalysts, iron-based catalysts and the like are frequently used, as well as Na ₂ O, K ₂
O, CaO, MgO, CuO, Ag ₂ O, alumina, zirconium oxide and other periodic group I, II, III or IV oxides, or compounds containing these oxides (Mc ₁ ) x
Those represented by (Mc ₂ ) y (O) z are used. However, the above
Mc ₁ is an element of Group I, Group II or Group III, said Mc ₂ is Group III such as aluminum (Al), carbon (C), silicon (Si), titanium (Ti), zirconium (Zr) and the like. Group IV, phosphorus (P), vanadium (V) and other group V elements, O is oxygen, x,
y and z are integers.

Incidentally, this catalyst can be supported on an adsorbent which will be described next, in order to simplify the exchange and to enhance the processing capacity.

The adsorbent of the method of the present invention is not particularly limited as long as it has the ability to adsorb or sorb noxious substances, and specifically, for example, activated carbon, ceramics, zeolite, alumina, acidic. White clay is used. The shape of the adsorbent is not particularly limited, and for example, a granular or lumpy one may be used.

In the method of the present invention, the processing container can be directly communicated with the atmosphere to release the processing gas detoxified by the processing into the atmosphere, but it has reached the breakthrough point or its vicinity. After that, in order to prevent exhaust gas containing harmful substances or dangerous substances from being emitted into the atmosphere, it is connected to the atmosphere through an exhaust pipe, and an outlet for opening and closing this exhaust pipe It is preferable to interpose a valve.

Therefore, it is preferable that the apparatus of the present invention comprises an exhaust pipe for discharging treated exhaust gas from the processing container to the atmosphere, and an outlet valve for opening and closing the exhaust pipe.

Now, the method of the present invention is premised on such a conventional exhaust gas treatment method in the semiconductor manufacturing industry, after the catalyst or adsorbent reaches the breakthrough point or its vicinity by the treatment of harmful substances or dangerous substances. During the time until the catalyst and the adsorbent are exchanged, the generated substance generated in the processing container, for example, hydrogen gas, is continuously and automatically rejected from the processing container. The generated substance, for example, hydrogen gas, is repelled from the processing container until the concentration of hydrogen gas falls below the lower explosion limit,
It means that.

When this product is hydrogen gas, if the hydrogen gas concentration in the processing container is below the explosion lower limit when the processing container is opened due to the repulsion of the hydrogen gas, the lighter fires around the processing container. There is no danger of an explosion even if there is a spark such as a cigarette or a cigarette fire, or if an electrostatic spark or an ignition spark of a lighter flies.

In the apparatus of the present invention, after the catalyst or the adsorbent reaches the breakthrough point or its vicinity and before the catalyst and the adsorbent are exchanged, the generated substance, such as hydrogen gas, generated in the treatment container is treated. Product purging device that rejects from inside,
For example, a hydrogen gas purging device is provided.

The product purging device may be constructed so that, for example, after closing the inlet valve and the outlet valve, the product generated in the processing container can be removed from the processing container. The product purging device includes a purge gas supply unit that pressurizes a purge gas into an inlet pipe between the inlet valve and the processing container, and a purge exhaust pipe that connects the exhaust pipe to the atmosphere between the processing container and the outlet valve. It may be configured so as to include. In this case, in order to prevent human error, for example, forgetting to close the valve, an automatic switching method may be adopted to automatically close the valve, and then the processing container may be purged just before it is replaced. Of.

As the purge gas to be press-fitted into the introduction pipe by the purge gas supply means, a gas having no danger such as harmfulness and flammability may be used, and specifically, an inert gas such as nitrogen (N ₂ ) or air. Can be used. Of these, the use of air is particularly desirable because the equipment cost and running cost can be made the lowest.

When air is used as the purge gas,
The purge gas supply means may be provided with an air pump that pressurizes and discharges air, and the air pressurized by this air pump is used as the purge gas.

In order to stabilize the supply pressure of the purge gas, the purge gas supply means equipped with this air pump is preferably equipped with a pressure setting valve in the purge gas supply path connecting the discharge port of the air pump and the introduction pipe. In order to stabilize the supply amount, it is preferable to include a pressure accumulating tank that stores air having a predetermined pressure set by the pressure setting valve. Therefore, it is desirable to use these air pumps or use a commercially available air compressor as the purge gas supply means. In this case, supply air source (eg air pump, air compressor, etc.) at the factory
When a gas cylinder or a nitrogen cylinder is provided, a pressure setting device and a flow rate control device may be attached to these and the air or nitrogen may be used.

A valve for opening and closing the purge gas supply passage is provided in the purge gas supply passage in order to prevent the exhaust gas from leaking from the introduction pipe to the atmosphere through the purge gas supply means when the produced substance purging device is stopped. Is preferably provided.

The product purging device may be configured so that the purge gas is pressed into the exhaust gas generation source side of the inlet pipe inlet valve. In this case, the purge gas is introduced into the exhaust gas generation source. It is not preferable because it may flow in and disturb the atmosphere composition of the exhaust gas source.

Further, although it is possible to use the exhaust pipe interposing the outlet valve as a purge exhaust pipe,
For example, in order to prevent the explosion of hydrogen gas and to reuse it, it is preferable to provide a purge exhaust pipe in addition to the exhaust pipe opened to the atmosphere.

In addition, a valve for opening and closing the purge exhaust pipe is provided in the purge exhaust pipe in order to prevent the exhaust gas from leaking from the introduction pipe to the atmosphere through the purge exhaust pipe when the produced substance purging device is stopped. It is preferable to provide.

In addition, in the method of the present invention, after the product is purged, for example, hydrogen gas is purged, the internal pressure of the processing container is gradually reduced to the atmospheric pressure before opening the processing container. It is possible to eliminate the risk that the used processing material will be ejected to the surroundings due to this ejection.

[0060]

As described above, the apparatus of the present invention is designed so that after the catalyst or the adsorbent in the processing container reaches the breakthrough point or its vicinity by the treatment of the harmful substance or the dangerous substance, the catalyst and the adsorbent in the processing container are adsorbed. When exchanging the material, a product substance purging device for removing the product substance produced in the processing container from the treatment container is provided before the catalyst or the adsorbent is replaced. When the processing container is replaced after the catalyst or adsorbent reaches the breakthrough point or its vicinity due to the treatment of substances or dangerous substances, the catalyst continuously and automatically to exchange verge, the product material produced in the process vessel that exclusion from the processing vessel, the action capable of implementing the present invention method can be obtained.

Further, according to the method of the present invention, before exchanging the catalyst or the adsorbent, the substance produced in the processing container is removed from the processing container.
This has the effect of preventing accidents such as explosions and ensuring work safety.

[0062]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the method of the present invention and the device of the present invention will be described in detail with reference to the drawings.

FIG. 1 is a flow chart of an exhaust gas treatment method in a semiconductor manufacturing industry according to an embodiment of the method of the present invention, and FIG. 2 is a semiconductor manufacturing industry according to an embodiment of an apparatus of the present invention for carrying out the method. It is a block diagram of the exhaust gas processing apparatus of.

As shown in FIG. 2, the exhaust gas treating apparatus of the semiconductor manufacturing industry according to an embodiment of the present invention is a blower or air pump 2 for extracting the exhaust gas of the semiconductor manufacturing industry from the exhaust gas generating source 1, and the exhaust gas generating source 1. A dust collector 3 that removes the dust in the exhaust gas extracted from the exhaust gas, and a process to oxidize, reduce, sorb, occlude, and adsorb the harmful or hazardous substances in the exhaust gas into a safe and clean gas. And a device 4 for removing harmful components. In this case, the dust collector 3 may be provided in the harmful component removing device 4.

This harmful component removing device 4 has a processing container 6 for containing a processing material 5 made of a catalyst and an adsorbent carrying the same, and an introducing pipe 7 for guiding exhaust gas from the dust collecting device 3 to the processing container 6. An exhaust pipe 8 that discharges the treated exhaust gas from the treatment container 6 to the atmosphere is provided.

The processing container 6 is formed in a cylindrical shape with both ends of the vertical axis closed so that the deterioration of the processing material 5 filled therein progresses as evenly as possible, and the introduction pipe is provided on the cylindrical axis of the upper end. 7 is connected, and the exhaust pipe 8 is connected on the cylindrical axis at the lower end thereof so that the air flow distribution in the processing container 6 becomes uniform.

Although not shown in the drawing, an inlet baffle plate is provided in the processing container 6 so as to face the opening of the introduction pipe 7 so that exhaust gas can sufficiently flow to the vicinity of the peripheral wall of the processing container 6. I have to. In addition, a peripheral baffle projecting inward from the inner surface of the processing container 6 is provided on at least an upper part, an intermediate part, or a lower part of the processing material filling portion to be filled with the processing material 5, so that The treatment material 5 near the peripheral surface is prevented from reaching the breakthrough point early (Japanese Patent Laid-Open No. 7-1164).
No. 50).

The inlet pipe 7 is provided with an inlet valve 9 for opening and closing the inlet pipe 7, and the exhaust pipe 8 is provided with an outlet valve 10 for opening and closing the exhaust pipe 8. The inlet valve 9 and the outlet valve 10 is opened, and the blower or air pump 2
The exhaust gas treatment device is started by driving (S
1), the exhaust gas is taken out from the exhaust gas generation source 1, dusts including fine dust are removed from the exhaust gas by the dust collector 3, and then the harmful component or dangerous substance in the exhaust gas is oxidized, reduced and collected by the harmful component removing device 4. It is subjected to treatments such as adsorption, occlusion, and adsorption to release it into a safe and clean gas.

In this embodiment, two harmful component removing devices 4 are connected in parallel to the dust collecting device 3, and an inlet valve 9 and an outlet valve 10 are provided for each harmful component removing device 4. The distribution of the exhaust gas to the harmful component removing device 4 can be independently controlled for each harmful component removing device 4.

When the amount of exhaust gas processed by the catalyst in the processing container 6 exceeds the predetermined breakthrough point (S2), the inlet valve 9 provided corresponding to the processing container 6 is closed to close the processing container 6 concerned. The exhaust gas is prevented from flowing into the processing container 6, and the outlet valve 10 provided corresponding to the processing container 6 is closed to prevent the exhaust gas from being diffused into the atmosphere from the processing container 6 (S3).

In this semiconductor manufacturing industry exhaust gas treatment device,
Further, after the inlet valve 9 and the outlet valve 10 are closed, a hydrogen purging device 11 for removing the produced substance generated in the processing container 6, in this case, hydrogen gas, from the processing container is provided.

This hydrogen purging device 11 has the above-mentioned inlet valve 9
Purge gas supply means 12 for pressurizing a purge gas into the introduction pipe 7 between the processing container 6 and the processing container 6, the processing container 6 and the outlet valve 1.
And a purge exhaust pipe 13 that connects the exhaust pipe 9 to the factory exhaust pipe.

The purge gas supply means 12 is a commercially available air compressor 14 and is derived therefrom, and the inlet valve 9 is provided.
The air compressor 1 is provided with a purge gas supply path 15 communicating with the introduction pipe 7 between the cleaning gas and the processing container 6 and a purge gas supply valve 16 for opening and closing the purge gas supply path 15.
4 includes an air pump 17.

A purge exhaust valve 20 for opening and closing the purge exhaust pipe 13 is interposed in the purge exhaust pipe 13.

When the breakthrough point of the catalyst in the processing container 6 has passed, the inlet valve 9 and the outlet valve 10 are closed and left for a predetermined time. Since the generated gas adsorbed to or adhered to the processing material 5 is separated during this standing period, the processing container 5 is not allowed to reach after the processing material 5 reaches or exceeds the breakthrough point.
The hydrogen gas generated in the processing container 6 is continuously and automatically exhausted from the processing container 6 until it is about to be replaced, that is, purged so that an accident such as an explosion does not occur, and then the processing container 6 is opened. Then, the used processing material 5 is replaced with a new processing material 5.

In this case, the untreated harmful substances or dangerous substances are contained in the exhaust gas sealed in the processing container 6 when the inlet valve 9 and the outlet valve 10 are closed. Of these, a highly reactive component such as monosilane is decomposed to generate hydrogen gas. A part of this hydrogen gas is combined with oxygen in the air sealed in the processing container 6 by a catalytic action, while the remaining hydrogen gas is treated in the processing container 6
Accumulate inside.

Even before the inlet valve 9 and the outlet valve 10 are closed, highly reactive components of harmful substances or dangerous substances are decomposed to generate hydrogen gas, but a part of this hydrogen gas is treated. Part of the hydrogen gas adsorbed by the material 5 and adsorbed by the processing material 5 is released from the processing material 105 after the inlet valve 9 and the outlet valve 10 are closed.

As a result, when the inlet valve 9 and the outlet valve 10 are closed, the hydrogen gas concentration in the processing container 6 gradually increases,
The internal pressure of the processing container 6 also gradually increases.

After closing the inlet valve 9 and the outlet valve 10 (S
3) The hydrogen purging device 11 is operated to perform hydrogen purging (S4). That is, the purge gas supply valve 16 and the purge exhaust valve 20 of the hydrogen purging device 11 are opened, and the air compressor 14 is actuated.
The compressed air is supplied to the exhaust gas, and the exhaust gas having a high hydrogen gas concentration in the processing container 6 is discharged to the outside of the processing container 6 through the purge exhaust pipe 13.

The exhaust gas (hydrogen gas) removed from the processing container 6 may be discharged into the air as it is, or, if desired, may be guided to a hydrogen gas combustor, burned, and discharged into the atmosphere. .

After the treatment material 5 reaches the breakthrough point or its vicinity due to the treatment of harmful substances or dangerous substances, the treatment container 6 is treated.
In exchanging the hydrogen gas, the hydrogen gas generated in the processing container 6 is continuously and automatically supplied from the processing container 6 after the processing material 5 reaches the breakthrough point or in the vicinity thereof until just before the processing container 6 is replaced. After purging, the purging is manually stopped and the processing container 6 is immediately replaced. As a result, the hydrogen gas concentration becomes extremely low, and the work can be performed safely.

After that, the processing container 6 is separated from the introduction pipe 7 and the exhaust pipe 8 and opened, and the used processing material 5 is replaced with a new processing material 5 (S5).

In this embodiment, in order to facilitate the separation of the processing container 6 from the inlet pipe 7 and the exhaust pipe 8 and the connection of the processing container 6 to the inlet pipe 7 and the exhaust pipe 8, the processing container 6
Is connected to the introduction pipe 7 and the exhaust pipe 8 by flange connection or clamp connection.

With this structure, there is no possibility of suddenly ejecting the processing gas having a high hydrogen concentration at the time of opening, and there is no possibility of explosion of hydrogen gas at the time of opening. it can.

The purge gas supply valve 16 and the purge exhaust valve 20 of the hydrogen purging device 11 are set to hydrogen purge (S4).
After the end of the process, that is, after a predetermined purge time has elapsed since the hydrogen purge was started, the processing container 6 in which the processing material 5 is replaced
The treatment material 5 by connecting the introduction pipe 7 and the carrier pipe 8.
(S5) is completed, and the inlet valve 9 and the outlet valve 10 are prepared in preparation for restarting the harmful component removal processing in the processing container 6.
Is closed until the valve is opened (S6).

Purge gas supply valve 1 of hydrogen purging device 11
6 and the purge exhaust valve 20 are closed, and after the replacement of the processing material 5 is completed, the inlet valve 9 and the outlet valve 10 are opened (S6), the inside of the processing container 6 filled with new processing material 5 is closed. The exhaust gas treatment by the treatment material 2 in step 1 is restarted.

In the exhaust gas treating apparatus of the semiconductor manufacturing industry according to the above embodiment, the air pump or the blower 2 is used.
Is connected to the downstream side of the harmful component removing device 4, but the location where the air pump or the blower 2 is connected is not limited to the downstream side of the harmful component removing device 4.

For example, an air pump or a blower 2 is connected to the upstream side of the exhaust gas source 1 to suck air from the atmosphere and press it into the exhaust gas source 1, or the exhaust gas source 1
An air pump or a blower 2 is connected between the dust collector 3 and the dust collector 3 to suck in untreated exhaust gas from the exhaust gas source 1 and press it into the dust collector 3, or to collect the dust collector 3 and the harmful component remover 4. It is possible to connect an air pump or a blower 2 between the two to suck in the exhaust gas from which dust containing fine particle dust has been removed and to press it into the harmful component removing device 4 under pressure. It is also possible to connect the air pump or the blower 2 to two or more of these connection points, respectively.

Further, when the air compressor 14 is provided with a backflow preventing means, the hydrogen purging device 1 is connected to the hydrogen purging device 1 through the introducing pipe 7.
If there is no risk of the exhaust gas leaking to the atmosphere via 1, the purge gas supply valve 16 of the hydrogen purging device 11 may be omitted.

[0090]

As described above, in the apparatus of the present invention, a processing container containing a catalyst or an adsorbent for decomposing or adsorbing harmful substances or dangerous substances contained in the exhaust gas generated from the exhaust gas source is provided. In the exhaust gas treatment equipment of the semiconductor manufacturing industry equipped with, after the catalyst or the adsorbent reaches the breakthrough point or its vicinity by the treatment of the harmful substances or the dangerous substances, the catalyst or the adsorbent is destroyed when the treatment container is replaced. A product substance purging device for continuously and automatically removing the product substance produced in the processing container from the treatment container after reaching the excess point or in the vicinity thereof until just before the replacement of the processing container is provided.

As a result, according to the apparatus of the present invention, before exchanging the catalyst or the adsorbent, the produced substance produced in the treatment container can be repelled from the treatment container by the produced substance purging device. This has the effect of preventing accidents such as explosions during work and significantly improving work safety.

In the method of the present invention, an exhaust gas containing harmful substances or hazardous substances used or produced in the semiconductor manufacturing industry is introduced into a treatment container, and the catalyst or adsorbent in the treatment container removes the harmful substances in the exhaust gas. In an exhaust gas treatment method of the semiconductor manufacturing industry in which a processing gas is released into the atmosphere after being decomposed or adsorbed, this processing container is used after the catalyst or the adsorbent reaches the breakthrough point or its vicinity due to the treatment of harmful substances or dangerous substances. When the catalyst is replaced, the product generated in the processing container is continuously and automatically discharged from the processing container after the catalyst or the adsorbent reaches the breakthrough point or its vicinity until just before the processing container is replaced. It is configured as follows.

As a result, according to the method of the present invention, it is possible to remove the substances produced in the processing container from the processing container before exchanging the catalyst or the adsorbent. It is possible to prevent such accidents and significantly improve work safety.

[Brief description of drawings]

FIG. 1 is a flow diagram of the method of the present invention.

FIG. 2 is a block diagram of the device of the present invention.

FIG. 3 is a configuration diagram of a conventional example.

[Explanation of symbols]

1 Exhaust gas source 2 Air pump 3 Dust collector 5 Treatment material (catalyst or adsorbent) 6 processing vessels 7 Introductory pipe 8 exhaust pipe 9 inlet valve 10 outlet valve 11 Hydrogen purging device

Continued front page    F-term (reference) 4D002 AA01 AA03 AA12 AA13 AA14                       AA17 AA18 AA19 AA22 AA23                       AA24 AA26 AA27 AA28 AA31                       AA40 AC10 BA04 BA05 BA06                       BA14 BA20 DA02 DA03 DA05                       DA06 DA11 DA21 DA23 DA25                       DA41 DA45 DA46 DA47 EA02                       EA03 EA04 EA05 EA08 EA13                       EA14 FA10 HA02 HA10                 4D048 AA21 AB03 CC70

Claims (7)

[Claims] 1. Introducing an exhaust gas containing harmful substances or dangerous substances used or generated in the semiconductor manufacturing industry into a processing container,
In the exhaust gas treatment method of the semiconductor manufacturing industry, which decomposes or adsorbs harmful substances in exhaust gas with the catalyst or adsorbent in this processing container and then releases the processing gas into the atmosphere, the catalyst or adsorption is performed by processing harmful substances or dangerous substances. When the processing container is replaced after the material reaches the breakthrough point or its vicinity, continuously and automatically after the catalyst or the adsorbent reaches the breakthrough point or its vicinity until just before the replacement of the processing container, A method for treating exhaust gas in a semiconductor manufacturing industry, characterized in that a generated substance generated in this processing container is excluded from the processing container. 2. The method for treating exhaust gas in the semiconductor manufacturing industry according to claim 1, wherein the produced substance is hydrogen gas. 3. An exhaust gas treatment apparatus for a semiconductor manufacturing industry, comprising a treatment container containing a catalyst or an adsorbent for decomposing or adsorbing harmful substances or dangerous substances contained in exhaust gas generated from an exhaust gas source, When the processing container is replaced after the catalyst or adsorbent reaches the breakthrough point or its vicinity due to the treatment of substances or dangerous substances, the catalyst An exhaust gas treating apparatus for a semiconductor manufacturing industry, which is provided with a product substance purging device for continuously and automatically removing a product substance produced in the processing container from the treatment container until just before replacement. 4. The exhaust gas treating apparatus of the semiconductor manufacturing industry according to claim 3, wherein the exhaust gas treating apparatus is a treatment container,
An introduction pipe that guides the exhaust gas from the exhaust gas generation source to the processing container, an exhaust pipe that discharges the treated exhaust gas from the processing container to the atmosphere, an inlet valve that opens and closes the introduction pipe, and the exhaust pipe is opened and closed. An exhaust gas treatment device for a semiconductor manufacturing industry, which is provided with an outlet valve. 5. The product purge device connects a purge gas supply means for injecting a purge gas into an introduction pipe between an inlet valve and a processing container, and an exhaust pipe to the atmosphere between the processing container and the outlet valve. 5. A purge exhaust pipe is provided.
Exhaust gas treatment equipment of the semiconductor manufacturing industry according to. 6. The exhaust gas treating apparatus of the semiconductor manufacturing industry according to claim 5, wherein the purge gas supply means comprises an air pump for pressurizing and discharging air. 7. The exhaust gas treating apparatus of the semiconductor manufacturing industry according to claim 3, wherein the generated substance is hydrogen gas.