JP2000040542A - Anisotropic conductive film and electrode connection structure using it - Google Patents

Anisotropic conductive film and electrode connection structure using it

Info

Publication number
JP2000040542A
JP2000040542A JP20831198A JP20831198A JP2000040542A JP 2000040542 A JP2000040542 A JP 2000040542A JP 20831198 A JP20831198 A JP 20831198A JP 20831198 A JP20831198 A JP 20831198A JP 2000040542 A JP2000040542 A JP 2000040542A
Authority
JP
Japan
Prior art keywords
particles
anisotropic conductive
conductive film
insulating particles
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP20831198A
Other languages
Japanese (ja)
Other versions
JP3447569B2 (en
Inventor
Hajime Nagaoka
元 長岡
Masami Takemoto
雅美 竹本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP20831198A priority Critical patent/JP3447569B2/en
Publication of JP2000040542A publication Critical patent/JP2000040542A/en
Application granted granted Critical
Publication of JP3447569B2 publication Critical patent/JP3447569B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29499Shape or distribution of the fillers

Abstract

PROBLEM TO BE SOLVED: To secure a film thickness required for compression bonding by preventing the degradation of the film thickness due to the influence of heat and pressure in transferring an anisotropic conductive film. SOLUTION: This anisotropic conductive film 1 is composed by mixing, in a binder resin 2, conductive particles 3 and insulating particles 4 each of which has a particle diameter larger than that of the conductive particles 3 and with which the elasticity lowering temperature is low. The particle diameter of each of the insulating particles 4 is around 0.7-1 time as much as the film thickness of the anisotropic conductive film 1. The glass transition point of the insulating particles 4 is smaller than that of the conductive particles 3. The film thickness not less than the particle diameter of each of the insulating particles 4 can be retained after transferring, and the film thickness required for compression bonding can be secured. In addition, the insulating particles 4 are easily flattened when compression-bonded, electrodes are electrically connected by the conductive particles 3. Additionally, the insulating particles 4 reside between electrodes adjacent to each other, so that a short circuit caused by the communication of the conductive particles 3 can be prevented. An electrode connection structure having high electrical connection reliability can also be provided.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、対向配置される電
極同士を電気的に接続するための異方性導電膜およびそ
れを用いた電極接続構造に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an anisotropic conductive film for electrically connecting electrodes arranged opposite to each other and an electrode connection structure using the conductive film.

【0002】[0002]

【従来の技術】異方性導電膜は、たとえば液晶表示装置
において液晶ドライバと周辺部材とを接続するため、特
に液晶パネルと液晶ドライバLSI(集積回路)とを接
続するためまたは配線基板と液晶ドライバLSIとを接
続するためなど、高精細な対向電極の接続に用いられ
る。
2. Description of the Related Art Anisotropic conductive films are used, for example, to connect a liquid crystal driver and peripheral members in a liquid crystal display device, particularly to connect a liquid crystal panel to a liquid crystal driver LSI (integrated circuit), or to connect a wiring substrate to a liquid crystal driver. It is used for connection of a high-definition counter electrode, such as for connection to an LSI.

【0003】図4は、従来技術である異方性導電膜21
を示す断面図である。異方性導電膜21は、バインダ樹
脂22に少なくとも導電粒子23を混合して成るが、た
とえば特開平5−174618号公報および特開平6−
59268号公報には、バインダ樹脂22に導電粒子2
3と絶縁粒子24とを混在して成る異方性導電膜21が
開示されている。
FIG. 4 shows a prior art anisotropic conductive film 21.
FIG. The anisotropic conductive film 21 is formed by mixing at least conductive particles 23 with a binder resin 22.
No. 59268 discloses that the binder resin 22 contains the conductive particles 2.
An anisotropic conductive film 21 comprising a mixture of the insulating particles 3 and insulating particles 24 is disclosed.

【0004】特開平5−174618号公報では、隣接
する電極間での短絡を防止することを目的としている。
導電粒子23は、アクリル樹脂などの樹脂微粒子から成
るコアの表面に、金、銀、銅、ニッケルおよびアルミニ
ウムなどの金属から成る導電膜をメッキや蒸着などによ
って被覆して構成される。絶縁粒子24は、導電粒子2
3よりも硬質であり、ガラスや硬質の樹脂などから成る
球状または円柱状のものから成る。また、絶縁粒子24
の粒子径は導電粒子23の粒子径よりも小さく、たとえ
ば導電粒子23の粒子径が5〜15μm程度で、絶縁粒
子24の粒子径は3〜8μm程度である。
Japanese Patent Application Laid-Open No. Hei 5-174618 aims to prevent a short circuit between adjacent electrodes.
The conductive particles 23 are formed by coating a surface of a core made of resin fine particles such as an acrylic resin with a conductive film made of a metal such as gold, silver, copper, nickel and aluminum by plating or vapor deposition. The insulating particles 24 include the conductive particles 2
It is harder than 3, and is made of a spherical or cylindrical material made of glass, hard resin, or the like. Also, the insulating particles 24
Is smaller than the particle size of the conductive particles 23, for example, the particle size of the conductive particles 23 is about 5 to 15 μm, and the particle size of the insulating particles 24 is about 3 to 8 μm.

【0005】特開平6−59268号公報では、100
μm以下の微細な端子ピッチで対向配置された電極間の
電気的接続の信頼性を向上することを目的としている。
バインダ樹脂22の膜厚は15〜30μmである。導電
粒子23は、粒子径が3〜8μm程度のポリスチレン粒
子の表面に約0.1μmの厚さのニッケル−金メッキを
施したものである。絶縁粒子24は、前記ポリスチレン
粒子、フェノール系樹脂またはポリスチレンブタジエン
重合体から成る粒子である。
In Japanese Patent Application Laid-Open No. 6-59268, 100
It is an object of the present invention to improve the reliability of electrical connection between electrodes arranged oppositely at a fine terminal pitch of μm or less.
The thickness of the binder resin 22 is 15 to 30 μm. The conductive particles 23 are obtained by applying nickel-gold plating having a thickness of about 0.1 μm to the surface of polystyrene particles having a particle diameter of about 3 to 8 μm. The insulating particles 24 are particles made of the polystyrene particles, a phenolic resin, or a polystyrene butadiene polymer.

【0006】また、特開平5−347464号公報にも
バインダ樹脂22に導電粒子23と絶縁粒子24とを混
合して成る異方性導電膜21が開示されている。
[0006] Japanese Patent Application Laid-Open No. Hei 5-347664 also discloses an anisotropic conductive film 21 obtained by mixing conductive particles 23 and insulating particles 24 in a binder resin 22.

【0007】このような異方性導電膜21はいずれもセ
パレータ上に形成される。一方電極上に、該電極と異方
性導電膜21とが当接するようにして異方性導電膜21
が形成されたセパレータが配置され、セパレータを介し
て熱と圧力とを加え、セパレータを剥離することによっ
て、異方性導電膜21が一方電極上に転写される。さら
に、該異方性導電膜21の上に、一方電極と位置合わせ
して他方電極を配置し、圧着することによって、電極同
士が電気的に接続される。
[0007] All such anisotropic conductive films 21 are formed on a separator. On the other hand, the anisotropic conductive film 21 is placed on the electrode so that the electrode and the anisotropic conductive film 21 are in contact with each other.
Is formed, and heat and pressure are applied through the separator to separate the separator, whereby the anisotropic conductive film 21 is transferred onto the one electrode. Further, the other electrode is arranged on the anisotropic conductive film 21 in alignment with the one electrode, and the electrodes are electrically connected by pressure bonding.

【0008】[0008]

【発明が解決しようとする課題】転写時に加えられる熱
と圧力とによって、異方性導電膜21の流動性が高くな
って膜厚が薄くなると、バインダ樹脂22の充填不足に
よって密着力が低下する。また、電極上の導電粒子数が
減少する。したがって、圧着後の電極の接続の信頼性が
低下する。電極の接続の信頼性低下を防止するために、
異方性導電膜21の転写時には出来る限り低温かつ低圧
で行うことが好ましい。しかし、被着体である電極やそ
の周辺部の材質や表面状態によって、高温かつ高圧でし
か転写できない場合があり、この場合上述した接続信頼
性に問題が生じる。
When the fluidity of the anisotropic conductive film 21 is increased by the heat and pressure applied during transfer and the film thickness is reduced, the adhesion is reduced due to insufficient filling of the binder resin 22. . Further, the number of conductive particles on the electrode is reduced. Therefore, the reliability of connection of the electrode after crimping is reduced. In order to prevent the reliability of electrode connection from decreasing,
It is preferable that the transfer of the anisotropic conductive film 21 be performed at as low temperature and pressure as possible. However, depending on the material and surface condition of the electrode to be adhered and its peripheral portion, transfer may be performed only at high temperature and high pressure, and in this case, the above-described connection reliability has a problem.

【0009】前述した特開平5−174618号公報お
よび特開平6−59268号公報では、絶縁粒子24の
粒子径は導電粒子23の粒子径よりも小さいかまたは同
等である。したがって、電極やその周辺部の材質や表面
状態によって、高温かつ高圧で転写する場合、異方性導
電膜21の膜厚が薄くなって接続信頼性が低下する。ま
た、特開平5−347464号公報の異方性導電膜21
は、対向配置される電極間に異方性導電膜を配置して電
極同士を圧着接続する際の導電粒子の破壊を防止するこ
とを目的としたものである。
In JP-A-5-174618 and JP-A-6-59268, the particle size of the insulating particles 24 is smaller than or equal to the particle size of the conductive particles 23. Therefore, when transferring at high temperature and high pressure depending on the material and surface condition of the electrode and its peripheral part, the thickness of the anisotropic conductive film 21 becomes thin, and the connection reliability decreases. Also, the anisotropic conductive film 21 disclosed in Japanese Patent Application Laid-Open No.
The object of the present invention is to prevent the destruction of conductive particles when an anisotropic conductive film is arranged between electrodes arranged to face each other and the electrodes are connected by pressure bonding.

【0010】本発明の目的は、異方性導電膜転写時の熱
および圧力の影響による膜厚の低下を低減して圧着に必
要な膜厚を確保し、電極の電気的接続に高い信頼性が得
られる異方性導電膜およびそれを用いた電極接続構造を
提供することである。
SUMMARY OF THE INVENTION It is an object of the present invention to reduce a decrease in film thickness due to the influence of heat and pressure during transfer of an anisotropic conductive film, secure a film thickness necessary for pressure bonding, and provide a high reliability for electrical connection of electrodes. And an electrode connection structure using the same.

【0011】[0011]

【課題を解決するための手段】本発明は、バインダ樹脂
中に、導電粒子と、該導電粒子よりも粒子径が大きくか
つ弾性率の低下温度が低い絶縁粒子とを混在して成るこ
とを特徴とする異方性導電膜である。
The present invention is characterized in that conductive particles and insulating particles having a particle size larger than the conductive particles and a temperature at which the elastic modulus is lowered are mixed in a binder resin. Is an anisotropic conductive film.

【0012】本発明に従えば、バインダ樹脂中に、導電
粒子と、該導電粒子よりも粒子径が大きくかつ該導電粒
子よりも弾性率の低下温度が低い絶縁粒子とを混在して
異方性導電膜が構成される。異方性導電膜の膜厚は、転
写時に熱および圧力が加わっても絶縁粒子の粒子径以上
に保持される。したがって、異方性導電膜の膜厚の低下
を防止して、圧着に必要な膜厚が確保できる。
According to the present invention, the binder resin contains a mixture of conductive particles and insulating particles having a particle diameter larger than the conductive particles and having a lower elastic modulus lowering temperature than the conductive particles. A conductive film is formed. The thickness of the anisotropic conductive film is maintained to be equal to or larger than the diameter of the insulating particles even when heat and pressure are applied during transfer. Therefore, it is possible to prevent a decrease in the film thickness of the anisotropic conductive film and to secure a film thickness necessary for pressure bonding.

【0013】また、異方性導電膜を用いた電極の電気的
接続は、一方の電極上に異方性導電膜を転写し、さらに
他方の電極を配置して圧着することによって行われる。
圧着時において、絶縁粒子は、導電粒子による電極の電
気的接続に支障を来すことなく容易に偏平する。さら
に、隣接する電極間にも絶縁粒子は存在し、これによっ
て導電粒子が連通して発生する短絡を防止することがで
きる。
Further, the electrical connection of the electrodes using the anisotropic conductive film is performed by transferring the anisotropic conductive film onto one of the electrodes, arranging the other electrode, and crimping.
During crimping, the insulating particles are easily flattened without hindering the electrical connection of the electrodes by the conductive particles. Further, the insulating particles exist between the adjacent electrodes, thereby preventing a short circuit caused by the conductive particles communicating with each other.

【0014】また本発明は、前記絶縁粒子の粒子径は、
異方性導電膜の膜厚の約0.7〜1倍に選ばれることを
特徴とする。
Further, according to the present invention, the insulating particles preferably have a particle diameter of:
The thickness is selected to be about 0.7 to 1 times the thickness of the anisotropic conductive film.

【0015】本発明に従えば、絶縁粒子の粒子径を異方
性導電膜の膜厚の約0.7〜1倍とすることによって、
異方性導電膜の膜厚は、転写時に絶縁粒子の粒子径以上
に確実に保持される。したがって、異方性導電膜の膜厚
の低下を確実に防止することができる。
According to the present invention, by setting the particle size of the insulating particles to about 0.7 to 1 times the thickness of the anisotropic conductive film,
The thickness of the anisotropic conductive film is reliably maintained at the time of transfer to be equal to or larger than the particle size of the insulating particles. Therefore, a decrease in the thickness of the anisotropic conductive film can be reliably prevented.

【0016】また本発明は、前記絶縁粒子のガラス転移
点は、導電粒子のガラス転移点よりも小さいことを特徴
とする。
Further, the present invention is characterized in that the glass transition point of the insulating particles is smaller than the glass transition point of the conductive particles.

【0017】本発明に従えば、絶縁粒子のガラス転移点
を導電粒子のガラス転移点よりも小さくすることによっ
て、圧着時に絶縁粒子は、導電粒子による電極の電気的
接続に支障を来すことなく容易に偏平する。
According to the present invention, by making the glass transition point of the insulating particles smaller than the glass transition point of the conductive particles, the insulating particles do not hinder the electrical connection of the electrodes by the conductive particles at the time of pressure bonding. Flatten easily.

【0018】また本発明は、互いに対向して配置される
一対の電極間に上述のうちのいずれか1つの異方性導電
膜を介在して、一対の前記電極同士が電気的に接続され
ることを特徴とする電極接続構造である。
Further, according to the present invention, one of the above-described anisotropic conductive films is interposed between a pair of electrodes arranged to face each other, and the pair of electrodes are electrically connected to each other. An electrode connection structure characterized in that:

【0019】本発明に従えば、電気的接続の信頼性の高
い電極の接続構造を提供することができる。
According to the present invention, it is possible to provide an electrode connection structure with high electrical connection reliability.

【0020】[0020]

【発明の実施の形態】図1は、本発明の実施の一形態で
ある異方性導電膜1を示す断面図である。異方性導電膜
1は、バインダ樹脂2中に、導電粒子3と、絶縁粒子4
とを混在して成る。絶縁粒子4は、導電粒子3よりも粒
子径が大きくかつ導電粒子3よりも弾性率の低下温度が
低いものである。
FIG. 1 is a sectional view showing an anisotropic conductive film 1 according to an embodiment of the present invention. The anisotropic conductive film 1 includes conductive particles 3 and insulating particles 4 in a binder resin 2.
And are mixed. The insulating particles 4 have a larger particle diameter than the conductive particles 3 and have a lower elastic modulus lowering temperature than the conductive particles 3.

【0021】特に、絶縁粒子4の粒子径は、異方性導電
膜1の膜厚の約0.7〜1倍に選ぶことが好ましい。ま
た、弾性率の低下温度は、たとえばガラス転移点Tgで
あり、絶縁粒子4のガラス転移点Tgiは、導電粒子3
のガラス転移点Tgcよりも小さいことが好ましい。
In particular, the particle diameter of the insulating particles 4 is preferably selected to be about 0.7 to 1 times the thickness of the anisotropic conductive film 1. The temperature at which the modulus of elasticity decreases is, for example, the glass transition point Tg, and the glass transition point Tgi of the insulating particles 4 is
Is preferably smaller than the glass transition point Tgc.

【0022】バインダ樹脂としては、たとえばエポキシ
樹脂を用いることができる。また、導電粒子3として
は、プラスチック製粒子にニッケル−金メッキしたもの
を用いることができる。さらに、絶縁粒子4としては、
プラスチック製ビーズを用いることができる。これらの
構成要素は、公知の技術、たとえば特開平5−1746
18号公報、特開平6−59268号公報および特開平
5−347464号公報に開示された材料で実現しても
構わない。
As the binder resin, for example, an epoxy resin can be used. Further, as the conductive particles 3, those obtained by plating nickel-gold on plastic particles can be used. Further, as the insulating particles 4,
Plastic beads can be used. These components are formed by a known technique, for example, Japanese Patent Application Laid-Open No. 5-1746.
18, JP-A-6-59268, and JP-A-5-34764.

【0023】図2は、異方性導電膜1を用いた電極接続
の方法および構造を示す断面図である。異方性導電膜1
は、セパレータ5の上に形成される。図2(A)に示さ
れるように、たとえば一方電極6の上に、該電極6と異
方性導電膜1とが当接するようにして、異方性導電膜1
が形成されたセパレータ5が配置される。次に、セパレ
ータ5を介して熱と圧力とを加え、セパレータ5を剥離
することによって異方性導電膜1が一方電極6の上に転
写される。さらに図2(B)に示されるように、該異方
性導電膜1の上に、一方電極6と位置合わせして他方電
極7が配置される。次に、圧着することによって図2
(C)に示されるように、電極6,7同士が導電粒子を
介して電気的に接続される。
FIG. 2 is a sectional view showing a method and structure for connecting electrodes using the anisotropic conductive film 1. Anisotropic conductive film 1
Is formed on the separator 5. As shown in FIG. 2 (A), for example, on one electrode 6, the anisotropic conductive film 1
Is formed. Next, heat and pressure are applied via the separator 5 and the separator 5 is peeled off, whereby the anisotropic conductive film 1 is transferred onto the one electrode 6. Further, as shown in FIG. 2 (B), the other electrode 7 is arranged on the anisotropic conductive film 1 in alignment with the one electrode 6. Next, FIG.
As shown in (C), electrodes 6 and 7 are electrically connected to each other via conductive particles.

【0024】バインダ樹脂2の中に、導電粒子3と、該
導電粒子3よりも粒子径が大きくかつ該導電粒子3より
も弾性率の低下温度が低い絶縁粒子4とを混在して構成
される異方性導電膜1の膜厚は、転写時に熱および圧力
が加わっても絶縁粒子4の粒子径以上に保持される。し
たがって、異方性導電膜1の膜厚の低下を防止して、圧
着に必要な膜厚を確保することができる。
In the binder resin 2, conductive particles 3 and insulating particles 4 having a larger particle diameter than the conductive particles 3 and having a lower elastic modulus lower than the conductive particles 3 are formed. The film thickness of the anisotropic conductive film 1 is maintained to be equal to or larger than the particle size of the insulating particles 4 even when heat and pressure are applied during transfer. Therefore, it is possible to prevent a decrease in the film thickness of the anisotropic conductive film 1 and to secure a film thickness necessary for pressure bonding.

【0025】また、異方性導電膜1を用いた電極6,7
同士の電気的接続は、一方の電極6の上に異方性導電膜
1を転写し、さらに他方の電極7を配置して圧着するこ
とによって行われる。圧着時において、絶縁粒子4は、
導電粒子3による電極6,7の電気的接続に支障を来す
ことなく容易に偏平する。さらに、隣接する電極6の間
および隣接する電極7の間にも絶縁粒子4は存在し、こ
れによって導電粒子3が連通して発生する短絡を防止す
ることができる。したがって、電極6,7同士の接続構
造の信頼性を向上することができる。
The electrodes 6 and 7 using the anisotropic conductive film 1
The electrical connection between them is performed by transferring the anisotropic conductive film 1 on one electrode 6, further arranging the other electrode 7 and crimping. At the time of pressure bonding, the insulating particles 4
The flattening can be easily performed without hindering the electrical connection between the electrodes 6 and 7 by the conductive particles 3. Furthermore, the insulating particles 4 also exist between the adjacent electrodes 6 and between the adjacent electrodes 7, thereby preventing a short circuit caused by the conductive particles 3 communicating with each other. Therefore, the reliability of the connection structure between the electrodes 6 and 7 can be improved.

【0026】また、絶縁粒子4の粒子径を異方性導電膜
1の膜厚の約0.7〜1倍とすることによって、異方性
導電膜1の膜厚は、転写時に絶縁粒子4の粒子径以上に
確実に保持される。したがって、異方性導電膜1の膜厚
の低下を確実に防止することができる。
By setting the particle size of the insulating particles 4 to about 0.7 to 1 times the thickness of the anisotropic conductive film 1, the film thickness of the Is surely maintained at a particle diameter of at least. Therefore, a decrease in the thickness of the anisotropic conductive film 1 can be reliably prevented.

【0027】また、絶縁粒子4のガラス転移点を導電粒
子3のガラス転移点よりも小さくすることによって、圧
着時に絶縁粒子4は、導電粒子3による電極6,7同士
の電気的接続に支障を来すことなく容易に偏平する。し
たがって、電極6,7同士の接続構造の信頼性を向上す
ることができる。
Further, by making the glass transition point of the insulating particles 4 smaller than the glass transition point of the conductive particles 3, the insulating particles 4 do not hinder the electrical connection between the electrodes 6 and 7 by the conductive particles 3 at the time of pressing. Flatten easily without coming. Therefore, the reliability of the connection structure between the electrodes 6 and 7 can be improved.

【0028】また、互いに対向して配置される一対の電
極6,7の間に上述したような異方性導電膜1を介在し
て、一対の前記電極6,7同士を電気的に接続すること
によって、電気的接続の信頼性の高い電極6,7の接続
構造を提供することができる。
The pair of electrodes 6 and 7 are electrically connected to each other with the anisotropic conductive film 1 described above interposed between the pair of electrodes 6 and 7 disposed opposite to each other. Thereby, a highly reliable connection structure of the electrodes 6 and 7 for electrical connection can be provided.

【0029】図3は、異方性導電膜1を用いて液晶素子
用の一対の基板部材8,11がそれぞれ有する電極1
0,13同士を電気的に接続する方法および構造を示す
断面図である。図3(A)は圧着前の状態を示し、図3
(B)は圧着後の状態を示す。一方の基板部材8は、液
晶素子用の基板9の上に電極10を形成して構成され
る。他方の基板部材11であるキャリアテープ11は、
たとえば液晶ドライバLSIを備えた可撓性を有する基
板12の上に電極13を形成して構成される。
FIG. 3 shows an electrode 1 of a pair of substrate members 8 and 11 for a liquid crystal element using an anisotropic conductive film 1.
It is sectional drawing which shows the method and structure which electrically connect 0,13 mutually. FIG. 3A shows a state before crimping, and FIG.
(B) shows the state after crimping. One substrate member 8 is formed by forming an electrode 10 on a substrate 9 for a liquid crystal element. The carrier tape 11, which is the other substrate member 11,
For example, the electrode 13 is formed on a flexible substrate 12 having a liquid crystal driver LSI.

【0030】電極10,13の接続の温度条件として
は、異方性導電膜1の転写時が100℃以下に設定さ
れ、圧着時が160℃以上に設定されるのが一般的であ
る。導電粒子3および絶縁粒子4のガラス転移点Tg
c,Tgiはともに圧着温度よりも低い温度に選ばれ、
かつ絶縁粒子4のガラス転移点Tgiは導電粒子3のガ
ラス転移点Tgcよりも低い温度に選ばれる。たとえ
ば、導電粒子3のガラス転移点Tgcを155℃に選
び、絶縁粒子4のガラス転移点Tgiを150℃に選ん
だ。
The temperature conditions for connecting the electrodes 10 and 13 are generally set to 100 ° C. or less during the transfer of the anisotropic conductive film 1 and set to 160 ° C. or more during the pressure bonding. Glass transition point Tg of conductive particles 3 and insulating particles 4
c and Tgi are both selected to be lower than the pressing temperature.
In addition, the glass transition point Tgi of the insulating particles 4 is selected to be lower than the glass transition point Tgc of the conductive particles 3. For example, the glass transition point Tgc of the conductive particles 3 was set to 155 ° C., and the glass transition point Tgi of the insulating particles 4 was set to 150 ° C.

【0031】また、一般的に、異方性導電膜1の膜厚は
15μm〜40μmの範囲に選ばれ、導電粒子3の粒子
径は3μm〜10μmの範囲に選ばれ、絶縁粒子4の粒
子径は異方性導電膜1の膜厚の0.7〜1倍に選ばれ
る。たとえば、異方性導電膜1の膜厚を20μmに、導
電粒子3の粒子径を5μmに、絶縁粒子4の粒子径を1
5μmにそれぞれ選んだ。
Generally, the thickness of the anisotropic conductive film 1 is selected in the range of 15 μm to 40 μm, the particle size of the conductive particles 3 is selected in the range of 3 μm to 10 μm, and the particle size of the insulating particles 4 is selected. Is selected to be 0.7 to 1 times the thickness of the anisotropic conductive film 1. For example, the film thickness of the anisotropic conductive film 1 is 20 μm, the particle size of the conductive particles 3 is 5 μm, and the particle size of the insulating particles 4 is 1 μm.
Each was selected to 5 μm.

【0032】図3(A)に示されるように異方性導電膜
1の転写時に100℃に加熱すると、転写後の異方性導
電膜1の膜厚はバインダ樹脂2の特性にかかわらず絶縁
粒子4の粒子径である15μm以上に保持することがで
きる。したがって、異方性導電膜1の膜厚の低下を防止
して、圧着に必要な膜厚を確保することができる。
As shown in FIG. 3 (A), when the film is heated to 100 ° C. during the transfer of the anisotropic conductive film 1, the thickness of the anisotropic conductive film 1 after the transfer is insulative regardless of the characteristics of the binder resin 2. The particle 4 can be maintained at a particle diameter of 15 μm or more. Therefore, it is possible to prevent a decrease in the film thickness of the anisotropic conductive film 1 and to secure a film thickness necessary for pressure bonding.

【0033】図3(B)に示されるように異方性導電膜
1の圧着時に200℃に加熱すると、充分な厚みを有す
る異方性導電膜1は接続部である電極10,13の間お
よび基板9,12の間に充分に充填される。これによっ
て、高い密着性で一方基板部材8とキャリアテープ11
とを接続することができる。また、電極10,13の間
に充填された絶縁粒子4は容易に変形するので、導電粒
子3を介して電極10,13同士を確実に電気的に接続
することができる。さらに、隣接する電極10の間およ
び電極13の間に絶縁粒子4が存在するので、導電粒子
3の連通を防止して、短絡の発生を防ぐことができる。
このように、電気的接続の信頼性の高い電極接続構造を
提供することができる。
As shown in FIG. 3B, when the anisotropic conductive film 1 is heated to 200 ° C. during compression bonding, the anisotropic conductive film 1 having a sufficient thickness is And between the substrates 9 and 12. Thereby, the one substrate member 8 and the carrier tape 11 are provided with high adhesion.
And can be connected. Further, since the insulating particles 4 filled between the electrodes 10 and 13 are easily deformed, the electrodes 10 and 13 can be reliably electrically connected to each other via the conductive particles 3. Furthermore, since the insulating particles 4 exist between the adjacent electrodes 10 and between the electrodes 13, the communication of the conductive particles 3 can be prevented, and the occurrence of a short circuit can be prevented.
In this manner, an electrode connection structure with high electrical connection reliability can be provided.

【0034】本実施形態によれば、異方性導電膜1の実
装工程における転写不良の防止と、電極接続の信頼性の
向上とを両立することができる。従来技術では接続信頼
性の確保のために低温低圧で転写しており、そのために
被着体に異方性導電膜を確実に転写できずに転写不良が
発生し、転写に時間がかかっていたのに対して、本実施
形態の異方性導電膜1によれば、高温高圧での転写が可
能であり、転写不良を防止することができ、短時間で転
写することができる。また、転写用の加熱手段の温度お
よび圧力のバランスが崩れた場合でも、異方性導電膜1
の膜厚が薄くなることによる接続不良の発生を防止する
ことができる。さらに、異方性導電膜1に使用するバイ
ンダ樹脂の特性として、初期の粘着性や100℃程度に
おける流動性などの制限が不要となり、選択の自由度が
増す。したがって、低温硬化および高速硬化などの特性
を有する異方性導電膜1の実現を図ることができる。
According to the present embodiment, it is possible to prevent the transfer failure in the mounting process of the anisotropic conductive film 1 and to improve the reliability of the electrode connection. In the prior art, transfer was performed at low temperature and low pressure in order to ensure connection reliability. Therefore, the anisotropic conductive film could not be reliably transferred to the adherend, resulting in transfer failure and time-consuming transfer. On the other hand, according to the anisotropic conductive film 1 of the present embodiment, transfer at high temperature and high pressure is possible, transfer failure can be prevented, and transfer can be performed in a short time. Further, even when the balance between the temperature and the pressure of the transfer heating means is lost, the anisotropic conductive film 1
It is possible to prevent the occurrence of connection failure due to the thin film thickness of the semiconductor device. Further, as the properties of the binder resin used for the anisotropic conductive film 1, there is no need to limit initial adhesiveness and fluidity at about 100 ° C., and the degree of freedom in selection is increased. Accordingly, it is possible to realize the anisotropic conductive film 1 having characteristics such as low-temperature curing and high-speed curing.

【0035】なお、本発明の異方性導電膜は、図3で説
明した液晶用の基板部材8とキャリアテープ11との接
続に用いるものに限らず、液晶用基板部材とプリント配
線基板との接続、液晶用基板部材とベアチップとの接
続、ベアチップとプリント配線基板との接続、およびプ
リント配線基板とキャリアテープとの接続などに用いる
ものも本発明の範囲に属するものであり、本実施形態で
説明したのと同様の効果が得られるものである。
The anisotropic conductive film of the present invention is not limited to the connection between the liquid crystal substrate member 8 and the carrier tape 11 described with reference to FIG. The connection, the connection between the liquid crystal substrate member and the bare chip, the connection between the bare chip and the printed wiring board, and the connection between the printed wiring board and the carrier tape are also included in the scope of the present invention. The same effect as described can be obtained.

【0036】[0036]

【発明の効果】以上のように本発明によれば、バインダ
樹脂中に、導電粒子と、該導電粒子よりも粒子径が大き
くかつ該導電粒子よりも弾性率の低下温度が低い絶縁粒
子とを混在して異方性導電膜を構成したので、転写後に
絶縁粒子の粒子径以上の膜厚を保持でき、圧着に必要な
膜厚を確保することができる。また圧着時に絶縁粒子が
容易に偏平し、導電粒子によって電極が電気的に接続さ
れる。さらに、隣接する電極間に絶縁粒子が存在するの
で、導電粒子が連通することによって発生する短絡を防
止することができる。
As described above, according to the present invention, conductive particles and insulating particles having a larger particle diameter than the conductive particles and a lowering temperature of the elastic modulus than the conductive particles are contained in the binder resin. Since the anisotropic conductive film is formed as a mixture, the film thickness can be maintained to be equal to or larger than the diameter of the insulating particles after the transfer, and the film thickness required for pressure bonding can be secured. In addition, the insulating particles are easily flattened during crimping, and the electrodes are electrically connected by the conductive particles. Further, since the insulating particles exist between the adjacent electrodes, it is possible to prevent a short circuit caused by the communication of the conductive particles.

【0037】また本発明によれば、絶縁粒子の粒子径を
異方性導電膜の膜厚の約0.7〜1倍にしたので、転写
後に絶縁粒子の粒子径以上の膜厚を確実に保持すること
ができ、異方性導電膜の膜厚の低下を確実に防止するこ
とができる。
Further, according to the present invention, the particle diameter of the insulating particles is set to about 0.7 to 1 times the film thickness of the anisotropic conductive film. Thus, the thickness of the anisotropic conductive film can be reliably prevented from being reduced.

【0038】また本発明によれば、絶縁粒子のガラス転
移点を導電粒子のガラス転移点よりも小さくしたので、
圧着時に絶縁粒子が容易に偏平し、導電粒子によって電
極が確実に電気的に接続され、電極接続構造の信頼性が
向上する。
According to the present invention, the glass transition point of the insulating particles is made smaller than that of the conductive particles.
The insulating particles are easily flattened at the time of pressure bonding, the electrodes are reliably electrically connected by the conductive particles, and the reliability of the electrode connection structure is improved.

【0039】また本発明によれば、電気的接続の信頼性
の高い電極接続構造を提供することができる。
Further, according to the present invention, it is possible to provide an electrode connection structure with high electrical connection reliability.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の実施の一形態である異方性導電膜1を
示す断面図である。
FIG. 1 is a sectional view showing an anisotropic conductive film 1 according to an embodiment of the present invention.

【図2】異方性導電膜1を用いた電極接続の方法および
構造を示す断面図である。
FIG. 2 is a cross-sectional view showing a method and a structure of electrode connection using an anisotropic conductive film 1;

【図3】異方性導電膜1を用いて液晶素子用の一対の基
板部材8,11がそれぞれ有する電極10,13同士を
電気的に接続する方法および構造を示す断面図である。
FIG. 3 is a cross-sectional view showing a method and a structure for electrically connecting electrodes 10 and 13 of a pair of substrate members 8 and 11 for a liquid crystal element using an anisotropic conductive film 1, respectively.

【図4】従来技術である異方性導電膜21を示す断面図
である。
FIG. 4 is a cross-sectional view showing a conventional anisotropic conductive film 21.

【符号の説明】[Explanation of symbols]

1 異方性導電膜 2 バインダ樹脂 3 導電粒子 4 絶縁粒子 6,7,10,13 電極 8 基板部材 9,12 基板 11 キャリアテープ DESCRIPTION OF SYMBOLS 1 Anisotropic conductive film 2 Binder resin 3 Conductive particle 4 Insulating particle 6,7,10,13 Electrode 8 Substrate member 9,12 Substrate 11 Carrier tape

フロントページの続き Fターム(参考) 5E319 AC02 BB16 CC12 5E344 AA04 AA21 BB02 BB13 CC23 CD04 CD31 DD06 DD08 DD10 EE06 Continued on the front page F term (reference) 5E319 AC02 BB16 CC12 5E344 AA04 AA21 BB02 BB13 CC23 CD04 CD31 DD06 DD08 DD10 EE06

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 バインダ樹脂中に、導電粒子と、該導電
粒子よりも粒子径が大きくかつ弾性率の低下温度が低い
絶縁粒子とを混在して成ることを特徴とする異方性導電
膜。
1. An anisotropic conductive film comprising a binder resin and a mixture of conductive particles and insulating particles having a larger particle diameter than the conductive particles and a lower temperature at which the elastic modulus is lowered.
【請求項2】 前記絶縁粒子の粒子径は、異方性導電膜
の膜厚の約0.7〜1倍に選ばれることを特徴とする請
求項1記載の異方性導電膜。
2. The anisotropic conductive film according to claim 1, wherein the particle size of said insulating particles is selected to be about 0.7 to 1 times the thickness of said anisotropic conductive film.
【請求項3】 前記絶縁粒子のガラス転移点は、導電粒
子のガラス転移点よりも小さいことを特徴とする請求項
1記載の異方性導電膜。
3. The anisotropic conductive film according to claim 1, wherein the glass transition point of the insulating particles is smaller than the glass transition point of the conductive particles.
【請求項4】 互いに対向して配置される一対の電極間
に請求項1〜3のうちのいずれか1つの異方性導電膜を
介在して、一対の前記電極同士が電気的に接続されるこ
とを特徴とする電極接続構造。
4. A pair of said electrodes are electrically connected to each other with an anisotropic conductive film according to claim 1 interposed between a pair of electrodes arranged to face each other. An electrode connection structure, characterized in that:
JP20831198A 1998-07-23 1998-07-23 Anisotropic conductive film and electrode connection structure using the same Expired - Fee Related JP3447569B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
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Application Number Priority Date Filing Date Title
JP20831198A JP3447569B2 (en) 1998-07-23 1998-07-23 Anisotropic conductive film and electrode connection structure using the same

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JP2000040542A true JP2000040542A (en) 2000-02-08
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Country Link
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010085477A (en) * 2000-02-23 2001-09-07 니시가키 코지 IC socket for surface-mounting semiconductor device
KR100637429B1 (en) * 2003-10-24 2006-10-20 삼성에스디아이 주식회사 Plasma display device
WO2018150897A1 (en) * 2017-02-15 2018-08-23 デクセリアルズ株式会社 Anisotropic conductive connection structure body, production method for anisotropic conductive connection structure body, anisotropic conductive film, and anisotropic conductive paste

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010085477A (en) * 2000-02-23 2001-09-07 니시가키 코지 IC socket for surface-mounting semiconductor device
KR100637429B1 (en) * 2003-10-24 2006-10-20 삼성에스디아이 주식회사 Plasma display device
US7413452B2 (en) 2003-10-24 2008-08-19 Samsung Sdi Co., Ltd. Interconnector, method for manufacturing a plasma display device using the same, and a plasma display device with the same
WO2018150897A1 (en) * 2017-02-15 2018-08-23 デクセリアルズ株式会社 Anisotropic conductive connection structure body, production method for anisotropic conductive connection structure body, anisotropic conductive film, and anisotropic conductive paste

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