JP2000036601A - Manufacture of thin-film transistor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a more efficient hydrogenation treatment for improved operating characteristics of a thin-film transistor. SOLUTION: A thin-film transistor has a lamination structure comprising a semiconductor thin-film 2, a gate insulating film 3 provided in contact with its one surface side, and a gate electrode 5 stacked on the semiconductor thin- film 2 through the gate insulating film 3. To manufacture a thin-film transistor, firstly a film-forming process is performed to form the semiconductor thin-film 2 of a polycrystal silicon on an insulating substrate 1. Then an injection process is performed where an impurity is selectively injected in the semiconductor thin-film 2 to form a source region S and a drain region D of the thin-film transistor. Then a wiring process is performed where a wiring electrode 7 electrically connected to the source region S and the drain region D is formed. Under a rapid heating method which uses a lamp as a heat source, the insulating substrate 1 is rapidly heated for a hydrogen to be diffused in the semiconductor thin-film 2, repairing a crystal defect.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a thin film transistor having a semiconductor thin film made of polycrystalline silicon formed on an insulating substrate as an active layer. For example, the present invention relates to a method for manufacturing a thin film transistor used as a switching element or a circuit element of an active matrix display device. More specifically, the present invention relates to a technique for hydrogenating a polycrystalline silicon semiconductor thin film for the purpose of improving the operation characteristics of a thin film transistor.

[0002]

2. Description of the Related Art FIG. 2 is a schematic sectional view showing an example of a thin film transistor manufactured by a conventional manufacturing method. A semiconductor thin film 2 made of polycrystalline silicon is formed on an insulating substrate 1. Its surface is covered with a gate insulating film 3. A gate electrode 5 is formed on the gate insulating film 3. Using the gate electrode 5 as a mask, impurities are implanted into the semiconductor thin film 2 to form a source region S and a drain region D. A channel region CH is left just below the gate electrode 5 and between the source region S and the drain region D. Gate electrode 5 is covered with first interlayer insulating film 6. A contact hole penetrating the source region S and the drain region D is opened in the first interlayer insulating film 6. On top of this, for example, aluminum is deposited to a thickness of 500 nm, patterned into a predetermined shape, and processed into the wiring electrode 7. PSG on it
(Silicon glass containing phosphorus) is formed into a film having a thickness of, for example, 500 nm to form a second interlayer insulating film 8. It is important that the second interlayer insulating film 8 contains sufficient moisture. Thereafter, an SiN film 9a is formed as a diffusion prevention film by 400n.
It is entirely formed on the second interlayer insulating film 8 with a thickness of m.
The SiN film 9a has a dense composition and can suppress upward diffusion of hydrogen. In this state, the insulating substrate 1 is put in a nitrogen atmosphere and annealed at a temperature of about 400 ° C. for 5 hours. As a result, the moisture contained in the second interlayer insulating film 8 is decomposed, and the generated hydrogen diffuses downward and is introduced into the semiconductor thin film 2,
A so-called hydrogenation treatment is performed. As described above, the upward diffusion of hydrogen is effectively blocked by the SiN film 9a, and the efficiency of the hydrogenation process is increased. Thereafter, after partially removing the SiN film 9a, the light shielding film 9 is formed. The light shielding film 9 is made of, for example,
The film was formed with a thickness of 00 nm and patterned.
By forming the light shielding film 9 after the hydrogenation treatment, its oxidation can be prevented before it occurs. Finally, a pixel electrode 10 made of a transparent conductive film is formed in the pixel opening where the light shielding film 9 is not formed.
To form

[0003] Hydrogen atoms introduced by the hydrogenation process diffuse into the crystal grain boundaries of the semiconductor thin film 2 made of polycrystalline silicon and bond with dangling bonds, so that the trap density is reduced and the barrier potential is reduced. Therefore, the mobility of the thin film transistor is increased, and the on-current can be increased. Further, the leak current can be suppressed by reducing the trap level. Further, part of the introduced hydrogen atoms is also bonded to an interface state at the boundary between the semiconductor thin film and the gate insulating film, so that the threshold voltage of the transistor can be reduced.

[0004]

In an active matrix type display device, a thin film transistor plays a role of a switching element for turning on / off an electro-optical material such as a liquid crystal. Therefore, the improvement of the performance of the thin film transistor immediately leads to the improvement of the performance of the active matrix type display device. There are various means for improving the performance. However, thin film transistors using polycrystalline silicon as an active layer are formed by hydrogenation performed relatively after the manufacturing process (after forming the wiring electrodes) regardless of the high-temperature process or the low-temperature process. Is common,
In addition, it has a great advantage because it can repair or remove damage accumulated in the previous process, and is widely used. Although various hydrogenation methods have been developed, the technique shown in FIG. 2 is a method of thermally decomposing water contained in PSG. However, this method has a disadvantage that process control is difficult. In addition, the throughput in annealing is poor, the process position of the hydrogenation process itself is limited, the number of extra diffusion prevention films is increased, and process control is required. As another method, there is hydrogenation using hydrogen plasma. However, there is a risk that the element is easily damaged by simultaneously occurring electrostatic damage and the element is destroyed. On the other hand, the method of annealing in an atmosphere containing hydrogen does not have such a danger. If annealing is performed for a sufficient time, the performance is improved, but the time required for the hydrogenation treatment is long and the throughput is deteriorated. As described above, in the conventional hydrogenation method, the diffusion source of hydrogen, the heat source, the diffusion prevention film, and the like are limited, and there is a limit in improving the performance. In order to overcome this limitation, a new method of hydrogenation that has a high throughput and is capable of sufficiently improving the characteristics and has easy process control is desired.

[0005]

A thin film transistor having a laminated structure including a semiconductor thin film, a gate insulating film disposed in contact with one surface of the semiconductor thin film, and a gate electrode overlaid on the semiconductor thin film via the gate insulating film is provided. According to the present invention,
It is formed on an insulating substrate by the following steps. First, a film forming step is performed, and a semiconductor thin film made of polycrystalline silicon is formed on an insulating substrate. Subsequently, an implantation step is performed, and an impurity is selectively implanted into the semiconductor thin film to form a source region and a drain region of the thin film transistor. Thereafter, a wiring step is performed to form a wiring electrode electrically connected to the source region and the drain region. Finally, a hydrogenation step is performed, and the insulating substrate is rapidly heated by a rapid heating method using a lamp as a heat source to diffuse hydrogen into the semiconductor thin film to repair crystal defects.

Preferably, in the hydrogenation step, the wiring electrode is coated with a water-containing insulating film, and hydrogen is diffused into the semiconductor thin film by a rapid heating method using this as a hydrogen supply source. In the hydrogenation step, the insulating substrate is heated at 350 ° C. or higher to 60 ° C.
Heating is performed at 0 ° C. or lower. The hydrogenation step is performed by heating the insulating substrate for a time period from 2 seconds to 120 seconds. The hydrogenation step is performed on the insulating substrate in a nitrogen gas atmosphere containing 0% to 4% hydrogen gas. In the hydrogenation step, after forming an anti-diffusion film for suppressing the upward diffusion of hydrogen, hydrogen is diffused downward toward the semiconductor thin film by a rapid heating method. Si as an anti-diffusion film for suppressing upward diffusion of hydrogen
A material having a dense composition of N or SiNO and capable of blocking hydrogen is used. Alternatively, a metal material which also has a light-shielding property for a semiconductor thin film is used as a diffusion prevention film for suppressing upward diffusion of hydrogen. For example, Ti, Cr, W, A
Metal materials selected from 1, Mo, Ta, alloys thereof, and alloys of these with Si can be used.

According to the present invention, a rapid heating method using a lamp as a heat source (Rapid Thermal Anneal)
(ing: RTA), the insulating substrate is rapidly heated to diffuse hydrogen into the semiconductor thin film to repair crystal defects. R
By employing TA, hydrogenation can be easily performed even immediately before the end of the process, which can contribute to improvement of characteristics such as mobility of the thin film transistor. RTA is an extremely short-time heat treatment, so that it has little damage and can be performed even in the final stage of the manufacturing process. This makes it possible to collectively repair or remove damage accumulated in each step of the manufacturing process.

[0008]

Embodiments of the present invention will be described below in detail with reference to the drawings. FIG. 1 is a cross-sectional view showing a thin film transistor manufactured by the manufacturing method according to the present invention. For easy understanding, portions corresponding to the thin film transistor shown in FIG. 2 are denoted by corresponding reference numerals. The present thin film transistor has a laminated structure including a semiconductor thin film 2, a gate insulating film 3 disposed in contact with one surface thereof, and a gate electrode 5 stacked on the semiconductor thin film 2 with the gate insulating film 3 interposed therebetween. It is formed on an insulating substrate 1.
In addition, on the gate insulating film 3, in addition to the gate electrode 5, a capacitance electrode 5 a for forming an auxiliary capacitance is also provided. In order to manufacture a thin film transistor having such a configuration, first, a film forming process is performed, and a semiconductor thin film 2 made of polycrystalline silicon is formed on the insulating substrate 1. Thereafter, after the gate insulating film 3 and the gate electrode 5 are provided, an implantation step is performed, and an impurity is selectively implanted into the semiconductor thin film 2 to form a source region S and a drain region D of the thin film transistor. Subsequently, after the first interlayer insulating film 6 is formed, a wiring process is performed to form a wiring electrode 7 electrically connected to the source region S and the drain region D. Thereafter, as a feature of the present invention, the insulating substrate 1 is rapidly heated by a rapid heating method (RTA) using a lamp as a heat source to diffuse hydrogen into the semiconductor thin film 2 to repair crystal defects. Preferably, in the hydrogenation step, after the wiring electrode 7 is covered with the water-containing second interlayer insulating film 8, hydrogen is diffused into the semiconductor thin film 2 by a rapid heating method using this as a hydrogen supply source. Examples of the water-containing second interlayer insulating film 8 include P
SG may be formed to a thickness of 500 nm. RTA for hydrogenation is performed by heating the insulating substrate 1 to 350 ° C. or higher and 600 ° C. or lower. If the temperature is lower than 350 ° C., hydrogen cannot be sufficiently diffused. If the temperature exceeds 600 ° C., the wiring electrode 7 and the like may be damaged. The hydrogenation RTA is performed by heating the insulating substrate 1 for a time of 2 seconds to 120 seconds.
If it is less than 2 seconds, the hydrogenation is insufficient, and if it exceeds 120 seconds, the damage becomes remarkable. The hydrogenation RTA is applied to the insulating substrate 1
Is performed in a nitrogen gas (forming gas) atmosphere containing 0% to 4% hydrogen gas. Preferably, the hydrogenation RT
A forms a diffusion prevention film for suppressing the upward diffusion of hydrogen on the second interlayer insulating film 8, and then diffuses hydrogen downward toward the semiconductor thin film 2. Here, the light shielding film 9 is used as a diffusion prevention film for suppressing the upward diffusion of hydrogen. Light shielding film 9
Uses a metal material having a light shielding property for the semiconductor thin film 2. For example, a metal material selected from Ti, Cr, W, Al, Mo, Ta, an alloy thereof, and an alloy of these and Si can be used. As shown in the figure, the thin film transistor is shielded from light by any one or more of the layers of the gate electrode 5, the capacitor electrode 5a, the wiring electrode 7, and the light shielding film 9 except for the pixel opening. The pixel electrode 10 made of a transparent conductive film is provided in the pixel opening. Instead of a metal material, a material having a dense composition of SiN or SiNO and capable of blocking hydrogen can be used as the diffusion prevention film for suppressing the upward diffusion of hydrogen. However, when SiN or SiNO is used, a separate light-shielding film is required, so that the configuration shown in FIG. 1 has no particular advantage. In a type in which a light-shielding film is formed on the counter substrate side or a structure in which a light-shielding film is formed below a thin film transistor, a configuration using SiN or SiNO as a diffusion prevention film is also effective. RTA is an extremely short-time heat treatment, so that thermal damage can be suppressed to a low level. Therefore, the hydrogenated RTA may be optionally formed after the pixel electrode 10 is formed.
It is also possible to do.

FIG. 3 is a schematic diagram showing the configuration of a rapid heating device used for hydrogenation RTA. A silicon plate 52 is arranged on the ring-shaped quartz plate 51 as a heat reservoir. A xenon arc lamp 50 is arranged below the silicon plate 52 as a heat source. The insulating substrate 1 to be processed is mounted on the silicon plate 52 via a support member 53 made of quartz. A xenon arc lamp 50 serving as a heat source is also arranged above the insulating substrate 1.

FIG. 4 is a graph showing a temperature profile of the hydrogenated RTA. As described with reference to FIG.
A 500 nm thick second interlayer insulating film 8 made of PSG is formed on an electrode 7 made of aluminum having a thickness of about 500 nm.
m is formed. In this process, it is important that the second interlayer insulating film 8 contains sufficient moisture. Further, as a pretreatment, a light shielding film 9 having a function of preventing upward diffusion of hydrogen.
Is formed in advance. For example, 200n of titanium metal (Ti)
The entire surface is sputtered with a thickness of m. In this state, the hydrogenation R according to the temperature profile shown in FIG.
Perform TA. The insulating substrate 1 to be processed is put into a rapid heating apparatus incorporating a sufficiently heated xenon arc lamp, for example, at 400 ° C. in a nitrogen atmosphere. As a result, the moisture contained in the second interlayer insulating film 8 is decomposed, and the diffused hydrogen is immediately taken into the polycrystalline silicon semiconductor thin film 2 as the active layer to remove crystal defects. Hydrogen that is to be diffused upward is hindered by the light-shielding film 9, and hydrogenation can be performed efficiently.

A first embodiment of the method of manufacturing a thin film transistor according to the present invention will be described with reference to FIGS. In this embodiment, a thin film transistor having a top gate structure is formed by a high temperature process in which the process temperature exceeds 850 ° C. First, in a step (A) of FIG. 5, a semiconductor thin film 2 is deposited on an insulating substrate 1 made of quartz or the like. Here, LP-
Polycrystalline silicon having a relatively small grain size was deposited to a thickness of 75 nm by CVD at a film formation temperature of 600 ° C. to 700 ° C.
Proceeding to the step (B), Si ions are implanted into the semiconductor thin film 2 by ion implantation, and the semiconductor thin film 2 is once made amorphous. Here, the acceleration energy is 40 keV and 60 keV
The ion implantation is performed by switching to the two stages. Proceeding to step (C), the semiconductor thin film 2 is converted from amorphous silicon to polycrystalline silicon having a relatively large grain size by a solid phase growth method. For solid phase growth (SPG), annealing is performed at a temperature of, for example, 620 ° C. for 8 hours. Proceeding to the step (D), the semiconductor thin film 2 is patterned according to the shape of the element region by photolithography and etching. Proceeding to step (E), the surface of the semiconductor thin film 2 is thermally oxidized to form the gate insulating film 3.
Is provided. For example, the insulating substrate 1 is exposed to an oxygen gas atmosphere at 1000 ° C. for 60 minutes to obtain a gate insulating film 3 having a thickness of 60 nm. As a result, the thickness of the semiconductor thin film 2 becomes 45 nm.
To decrease.

Proceeding to step (F) in FIG. 6, HTO is formed by CVD.
(High Temperature Oxide) gate insulating film 4 is deposited to a thickness of 30 nm. The processing temperature at this time is 800 ° C. At 1000 ° C
Annealing is performed for 0 minutes to densify the gate insulating film 4.
In step (G), a gate electrode 5 made of polycrystalline silicon is formed on the gate insulating film 4 by patterning. The thickness of the gate electrode 5 is 350 to 450 nm,
Phosphorus (P) is diffused into the gate electrode 5 by a heat treatment at about ° C. to reduce the resistance. Proceeding to step (H), using the gate electrode 5 as a mask, the impurity As is implanted into the semiconductor thin film 2 by ion implantation at a dose of, for example, 3 × 10 ¹⁵ / cm ² to form the source region S and the drain region D. . A channel region CH is left just below the gate electrode 5 and between the source region S and the drain region D. Thus, an N-channel thin film transistor is formed. Note that when a P-channel thin film transistor is formed, boron (B) is used as an impurity,
For example, the semiconductor thin film 2 may be implanted at a dose of 1 × 10 ¹⁵ / cm ² by ion implantation.
Proceeding to step (I), PSG is 600 by LP-CVD.
The first interlayer insulating film 6 is deposited with a thickness of nm. LP-
The processing temperature of CVD is about 400 ° C. The PSG forming the first interlayer insulating film 6 contains about 4% of phosphorus (P). Here, heat treatment is performed at 1000 ° C. for 10 minutes to activate the impurities implanted in the source region S and the drain region D.

In step (J) of FIG. 7, a contact hole is opened in the first interlayer insulating film 6. Aluminum is deposited thereon by sputtering to a thickness of 600 nm,
The wiring electrode 7 is processed by patterning into a predetermined shape. Proceeding to the step (K), PSG is deposited to provide a water-containing second interlayer insulating film 8. Proceeding to the step (L), the second interlayer insulating film 8
After opening a contact hole required for the above, metal Ti is entirely formed on the surface of the insulating substrate 1 by sputtering, and a light shielding film 9 is provided. Proceeding to the step (M), hydrogenation RTA is performed under the conditions shown in FIG. 4 to decompose the water contained in the second interlayer insulating film 8 and to diffuse the generated hydrogen downward to be introduced into the semiconductor thin film 2. Repair the crystal defect. The upward diffusion of hydrogen is blocked by the light-shielding film 9, so that efficient hydrogenation can be performed.

FIG. 8 shows a thin film transistor according to the present invention.
FIG. 5 is a process chart showing a second embodiment of the manufacturing method of FIG. here
Is a low-temperature process with a process temperature of 650 ° C or less.
We manufacture thin film transistors with a bottom gate structure.
First, as shown in (A), an insulating substrate made of glass or the like
1, Al, Ta, Mo, W, Cr, Cu or
These alloys are formed to a thickness of 100 to 200 nm,
To form a gate electrode 5. Then shown in (B)
To form a gate insulating film on the gate electrode 5.
You. In this embodiment, the gate insulating film is a gate nitride film 3 (S
iN_x) / Gate oxide film 4 (SiO_Two) Double layer structure
Was. The gate nitride film 3 is made of SiH_FourGas and NH _ThreeGas mixture
The compound is used as a source gas and the plasma CVD method (PCV
D method). In this embodiment, the gate nitride film 3 is
Deposited at a thickness of 0 nm. Continued to form gate nitride film 3
To form a gate oxide film 4 with a thickness of about 200 nm.
You. Further, the amorphous silicon is continuously formed on the gate oxide film 4.
Semiconductor thin film 2 having a thickness of about 30 to 80 nm.
A film was formed. Double-layered gate insulating film and amorphous semiconductor thin film
Sample No. 2 formed a continuous film without breaking the vacuum system of the film forming chamber. Less than
When the plasma CVD method is used for the above film formation, 400
Heat treatment in nitrogen atmosphere for about 1 hour
To release hydrogen contained in the amorphous semiconductor thin film 2.
Put out. A so-called dehydrogenation anneal is performed. Then,
The amorphous semiconductor thin film 2 is crystallized by irradiating laser light. Les
Use excimer laser beam as user light
Can be. What is called laser annealing is 600 ° C or less.
Potential for crystallizing semiconductor thin film 2 at process temperature
Means. In this embodiment, the pulsed excitation
Laser light shaped into a shape or a band is converted to an amorphous semiconductor
The thin film 2 is irradiated for crystallization. Thereafter, the semiconductor thin film 2
Patterning according to the element area of each thin film transistor
I do.

[0015] (C), the forms before the SiO _2, for example, a plasma CVD method on the polycrystalline semiconductor thin film 2 crystallized at about 100nm to 300nm thick by step. This SiO ₂ is patterned into a predetermined shape and processed into an etching stopper film 6a. In this case, the etching stopper film 6a is patterned so as to be aligned with the gate electrode 5 using the backside exposure technique. The portion of the polycrystalline semiconductor thin film 2 located immediately below the etching stopper film 6a is protected as a channel region CH. Subsequently, impurities (for example, P ⁺ ions) are ion-doped using the etching stopper film 6 a as a mask to form the semiconductor thin film 2.
To form an LDD region. The dose at this time is, for example, 6 × 10 ^{12 to} 5 × 10 ¹³ / cm ² .
After patterning a photoresist so as to cover the stopper film 6a and the LDD regions on both sides thereof,
Using this as a mask, impurities (for example, P ⁺ ions) are implanted at a high concentration to form a source region S and a drain region D. For example, ion doping can be used for the impurity implantation. This is to implant impurities by electric field acceleration without applying mass separation, and in this embodiment, 1 × 1
Impurities were implanted at a dose of about 0 ¹⁵ / cm ² to form a source region S and a drain region D. Although not shown, in the case of forming a P-channel thin film transistor, after the region of the N-channel thin film transistor is covered with a photoresist, impurities are switched from P ⁺ ions to B ⁺ ions, and the dose is 1 × 10 ¹⁵ / Ion doping may be performed at about cm ² . Thereafter, the polycrystalline semiconductor thin film 2 is subjected to laser activation annealing using an excimer laser.
Activate the impurities implanted in the substrate.

Finally, as shown in FIG.
A film having a thickness of 00 nm is formed to form a water-containing interlayer insulating film 6. After the formation of the interlayer insulating film 6, plasma CVD of SiN _x is performed.
A film having a thickness of about 200 to 400 nm is formed by a method to form a diffusion prevention film (cap film) 9a. At this stage, hydrogenation RTA is performed in a nitrogen gas, a forming gas, or an atmosphere in a vacuum. The conditions are as shown in the profile of FIG. By this hydrogenation RTA, hydrogen atoms contained in the interlayer insulating film 6 are diffused into the semiconductor thin film 2. Thereafter, a contact hole is opened, and Mo, Al, or the like is sputtered with a thickness of 200 to 400 nm, and then patterned into a predetermined shape to process the wiring electrode 7. Further, after a flattening layer 11 made of acrylic resin or the like is applied with a thickness of 1000 nm, a contact hole is opened. Flattening layer 11
After a transparent conductive film made of ITO, IXO, or the like is sputtered on the substrate, it is patterned into a predetermined shape and processed into the pixel electrode 10.

Finally, an example of an active matrix type display device using the thin film transistors manufactured in the first embodiment or the second embodiment will be described with reference to FIG. As shown in the drawing, this display device has a pair of insulating substrates 101 and 102.
And a electro-optical substance 103 held between them. As the electro-optical material 103, for example, a liquid crystal material is used. On the lower insulating substrate 101, a pixel array section 104 and a drive circuit section are integrally formed.
The drive circuit section includes a vertical drive circuit 105 and a horizontal drive circuit 106
And divided into Further, a terminal portion 107 for external connection is formed at an upper end of a peripheral portion of the insulating substrate 101. The terminal portion 107 is connected to a vertical drive circuit 105 and a horizontal drive circuit 106 via a wiring 108. Pixel array unit 10
4 includes a row-shaped gate wiring 109 and a column-shaped signal wiring 110.
Are formed. The pixel electrode 111 is located at the intersection of both wirings.
And a thin film transistor 112 for driving the same. The gate electrode of the thin film transistor 112 is connected to the corresponding gate wiring 109, the drain region is connected to the corresponding pixel electrode 111, and the source region is connected to the corresponding signal wiring 110. The gate wiring 109 is connected to the vertical driving circuit 105, while the signal wiring 110 is connected to the horizontal driving circuit 106. The thin film transistor 112 for switchingly driving the pixel electrode 111 and the thin film transistors included in the vertical drive circuit 105 and the horizontal drive circuit 106 are manufactured according to the present invention.

[0018]

As described above, according to the present invention,
The insulating substrate is rapidly heated by a rapid heating method using a lamp as a heat source to diffuse hydrogen into the semiconductor thin film and repair crystal defects. Since the so-called RTA-based hydrogenation process is completed with a very short heat treatment, the process position of the hydrogenation process,
There is a margin for hydrogenation temperature, hydroprocessing time, etc.
Hydrogenation of a semiconductor thin film can be performed effectively without strict control. By adopting the hydrogenated RTA, the number of steps can be reduced and the throughput can be improved, which leads to a reduction in manufacturing cost. In addition, hydrogenated RTA can be employed regardless of high or low temperature processes.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view illustrating a thin film transistor manufactured according to the present invention.

FIG. 2 is a cross-sectional view illustrating a thin film transistor manufactured by a conventional method.

FIG. 3 is a schematic view showing a rapid heating device used in the method for manufacturing a thin film transistor according to the present invention.

4 is a graph showing a temperature profile of a hydrogenation treatment using the rapid heating device shown in FIG.

FIG. 5 is a process chart showing a first embodiment of a method of manufacturing a thin film transistor according to the present invention.

FIG. 6 is a process chart showing a first embodiment.

FIG. 7 is a process chart showing the first embodiment.

FIG. 8 is a process chart showing a second embodiment of the method of manufacturing a thin film transistor according to the present invention.

FIG. 9 is a perspective view showing an example of an active matrix display device which is an application example of the present invention.

[Explanation of symbols]

 Reference Signs List 1 insulating substrate 2 semiconductor thin film 3 gate insulating film 5 gate electrode 6 first interlayer insulating film 7 wiring electrode 8 second interlayer insulating film 9 light shielding film 10 pixel electrode

Claims (10)

[Claims] 1. A laminated structure including a semiconductor thin film, a gate insulating film disposed in contact with one surface of the semiconductor thin film, and a gate electrode superposed on the semiconductor thin film with the gate insulating film interposed therebetween. A method of manufacturing a formed thin film transistor, comprising: a film forming step of forming a semiconductor thin film made of polycrystalline silicon on an insulating substrate; and selectively implanting impurities into the semiconductor thin film to form a source region and a drain region of the thin film transistor. An implantation step for forming, a wiring step for forming wiring electrodes electrically connected to the source region and the drain region, and a rapid heating method using a lamp as a heat source to rapidly heat the insulating substrate to diffuse hydrogen into the semiconductor thin film and crystallize. And a hydrogenation step of repairing a defect. 2. The method according to claim 1, wherein, in the hydrogenation step, the wiring electrode is coated with a water-containing insulating film, and then the hydrogen is diffused into the semiconductor thin film by a rapid heating method using this as a hydrogen supply source. 2. The method for manufacturing a thin film transistor according to 1. 3. The method according to claim 1, wherein the hydrogenation step includes the step of:
2. The method for manufacturing a thin film transistor according to claim 1, wherein the heating is performed at a temperature not lower than 600C and not higher than 600C. 4. The method according to claim 1, wherein in the hydrogenation step, the insulating substrate is heated for a time period of 2 seconds to 120 seconds. 5. The method according to claim 1, wherein in the hydrogenation step, the insulating substrate is heated in a nitrogen gas atmosphere containing 0% to 4% hydrogen gas. 6. The method according to claim 1, wherein in the hydrogenation step, after forming an anti-diffusion film for suppressing upward diffusion of hydrogen, hydrogen is diffused downward toward the semiconductor thin film by a rapid heating method. A method for manufacturing a thin film transistor. 7. The method according to claim 1, wherein in the hydrogenation step, a material having a dense composition made of SiN or SiNO and capable of blocking hydrogen is used as a diffusion prevention film for suppressing upward diffusion of hydrogen. A method for manufacturing the thin film transistor according to the above. 8. The method of manufacturing a thin film transistor according to claim 1, wherein in the hydrogenation step, a metal material having a light shielding property for a semiconductor thin film is used as a diffusion prevention film for suppressing upward diffusion of hydrogen. 9. The method according to claim 1, wherein the hydrogenation step includes the steps of: forming a diffusion prevention film for suppressing upward diffusion of hydrogen;
9. The method of manufacturing a thin film transistor according to claim 8, wherein a metal material selected from the group consisting of o, Ta, an alloy thereof, and an alloy of these and Si is used. 10. A semiconductor device comprising: a pair of substrates joined to each other with a predetermined gap therebetween; and an electro-optical material held in the gap. An opposing electrode is formed on one of the transparent substrates, and the other is formed on an insulating substrate. Is a method for manufacturing a display device in which a pixel electrode and a thin film transistor for driving the pixel electrode are formed, and the thin film transistor is formed by a semiconductor thin film and a gate electrode which is overlaid on one surface side with a gate insulating film interposed therebetween. A film forming step of forming a semiconductor thin film made of silicon on an insulating substrate; an implanting step of selectively injecting impurities into the semiconductor thin film to form a source region and a drain region of the thin film transistor; A wiring process for forming wiring electrodes to be connected, and a rapid heating method using a lamp as a heat source, rapidly heats the insulating substrate to diffuse hydrogen into the semiconductor thin film and crystallize it. Method for manufacturing a display device and performing the hydrogenation step of repairing Recessed.