JP2000031107A5 - - Google Patents
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- JP2000031107A5 JP2000031107A5 JP1999108436A JP10843699A JP2000031107A5 JP 2000031107 A5 JP2000031107 A5 JP 2000031107A5 JP 1999108436 A JP1999108436 A JP 1999108436A JP 10843699 A JP10843699 A JP 10843699A JP 2000031107 A5 JP2000031107 A5 JP 2000031107A5
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- JP
- Japan
- Prior art keywords
- semiconductor substrate
- organic solvent
- vaporized
- drying
- nozzle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 description 65
- 239000000758 substrate Substances 0.000 description 65
- 239000003960 organic solvent Substances 0.000 description 39
- 238000001035 drying Methods 0.000 description 32
- 238000005507 spraying Methods 0.000 description 4
Description
【特許請求の範囲】
【請求項１】 有機溶剤を気化し、上記気化された上記有機溶剤をノズルを通じて半導体基板に吹き付けることにより上記半導体基板を乾燥させるようにした半導体基板の乾燥装置において、
上記気化された上記有機溶剤を、垂直方向から上記半導体基板の側に向かって２０°から５０°の角度で、上記半導体基板に吹き付けるようにした
ことを特徴とする半導体基板の乾燥装置。
【請求項２】 有機溶剤を気化し、上記気化された上記有機溶剤をノズルを通じて半導体基板に吹き付けることにより上記半導体基板を乾燥させるようにした半導体基板の乾燥装置において、
上記ノズルのノズル穴を、上記ノズルの断面の中心と上記ノズル穴の中心とを結ぶ直線が、上記ノズルの断面の中心と上記半導体基板の中心とを結んだ直線と、上記ノズルの断面の中心から上記半導体基板に引いた接線との間にあるように設ける
ことを特徴とする半導体基板の乾燥装置。
【請求項３】 有機溶剤を気化し、上記気化された上記有機溶剤を半導体基板に吹き付けることにより上記半導体基板を乾燥させるようにした半導体基板の乾燥装置において、
上記気化された上記有機溶剤の初期吐出量を０．８ｃｃ／秒以上１．５ｃｃ／秒以下とする
ことを特徴とする半導体基板の乾燥装置。
【請求項４】 有機溶剤を気化し、上記気化された上記有機溶剤を半導体基板に吹き付けることにより上記半導体基板を乾燥させるようにした半導体基板の乾燥装置において、
上記乾燥における上記有機溶剤の使用量を７０ｃｃ／バッチ以上２００ｃｃ／バッチ以下とする
ことを特徴とする半導体基板の乾燥装置。
【請求項５】 有機溶剤を気化し、上記気化された上記有機溶剤を半導体基板に吹き付けることにより上記半導体基板を乾燥させるようにした半導体基板の乾燥装置において、
上記気化された上記有機溶剤の初期吐出量を０．６ｃｃ／秒以上１．５ｃｃ／秒以下とする
ことを特徴とする半導体基板の乾燥装置。
【請求項６】 有機溶剤を気化し、上記気化された上記有機溶剤を半導体基板に吹き付けることにより上記半導体基板を乾燥させるようにした半導体基板の乾燥装置において、
上記乾燥における上記有機溶剤の使用量を５０ｃｃ／バッチ以上１５０ｃｃ／バッチ以下とする
ことを特徴とする半導体基板の乾燥装置。
【請求項７】 有機溶剤を気化し、上記気化された上記有機溶剤を、ノズルを通じて半導体基板に吹き付けることにより上記半導体基板を乾燥させるようにした半導体基板の乾燥装置において、
上記ノズルが３本以上設けられている
ことを特徴とする半導体基板の乾燥装置。
【請求項８】 有機溶剤を気化し、上記気化された上記有機溶剤をノズルを通じて半導体基板に吹き付けることにより上記半導体基板を乾燥させるようにした半導体基板の乾燥方法において、
上記気化された上記有機溶剤を、垂直方向から上記半導体基板の側に向かって２０°から５０°の角度で、上記半導体基板に吹き付けるようにした
ことを特徴とする半導体基板の乾燥方法。
【請求項９】 有機溶剤を気化し、上記気化された上記有機溶剤をノズルを通じて半導体基板に吹き付けることにより上記半導体基板を乾燥させるようにした半導体基板の乾燥方法において、
上記ノズルの断面の中心と上記ノズルのノズル穴の中心とを結ぶ直線が、上記ノズルの断面の中心と上記半導体基板の中心とを結んだ直線と、上記ノズルの断面の中心から上記半導体基板に引いた接線との間にあるようにする
ことを特徴とする半導体基板の乾燥方法。
【請求項１０】 有機溶剤を気化し、上記気化された上記有機溶剤を半導体基板に吹き付けることにより上記半導体基板を乾燥させるようにした半導体基板の乾燥方法において、
上記気化された上記有機溶剤の初期吐出量を０．８ｃｃ／秒以上１．５ｃｃ／秒以下とする
ことを特徴とする半導体基板の乾燥方法。
【請求項１１】 有機溶剤を気化し、上記気化された上記有機溶剤を半導体基板に吹き付けることにより上記半導体基板を乾燥させるようにした半導体基板の乾燥方法において、
上記乾燥における上記有機溶剤の使用量を７０ｃｃ／バッチ以上２００ｃｃ／バッチ以下とする
ことを特徴とする半導体基板の乾燥方法。
【請求項１２】 有機溶剤を気化し、上記気化された上記有機溶剤を半導体基板に吹き付けることにより上記半導体基板を乾燥させるようにした半導体基板の乾燥方法において、
上記気化された上記有機溶剤の初期吐出量を０．６ｃｃ／秒以上１．５ｃｃ／秒以下とする
ことを特徴とする半導体基板の乾燥方法。
【請求項１３】 有機溶剤を気化し、上記気化された上記有機溶剤を半導体基板に吹き付けることにより上記半導体基板を乾燥させるようにした半導体基板の乾燥方法において、
上記乾燥における上記有機溶剤の使用量を５０ｃｃ／バッチ以上１５０ｃｃ／バッチ以下とする
ことを特徴とする半導体基板の乾燥方法。
【請求項１４】 有機溶剤を気化し、上記気化された上記有機溶剤をノズルを通じて半導体基板に吹き付けることにより上記半導体基板を乾燥させるようにした半導体基板の乾燥方法において、
上記ノズルを３本以上設け、これらのノズルを通じて上記気化された上記有機溶剤を上記半導体基板に吹き付けるようにした
ことを特徴とする半導体基板の乾燥方法。
[Claims]
1. In a semiconductor substrate drying apparatus in which an organic solvent is vaporized and the vaporized organic solvent is sprayed onto the semiconductor substrate through a nozzle to dry the semiconductor substrate.
The vaporized organic solvent is sprayed onto the semiconductor substrate at an angle of 20 ° to 50 ° from the vertical direction toward the semiconductor substrate side.
A semiconductor substrate drying device characterized by this.
2. In a semiconductor substrate drying apparatus in which the organic solvent is vaporized and the vaporized organic solvent is sprayed onto the semiconductor substrate through a nozzle to dry the semiconductor substrate.
The straight line connecting the nozzle hole of the nozzle between the center of the cross section of the nozzle and the center of the nozzle hole is the straight line connecting the center of the cross section of the nozzle and the center of the semiconductor substrate, and the center of the cross section of the nozzle. Provided so as to be between the tangent line drawn from the above semiconductor substrate.
A semiconductor substrate drying device characterized by this.
3. In a semiconductor substrate drying apparatus in which the semiconductor substrate is dried by vaporizing the organic solvent and spraying the vaporized organic solvent onto the semiconductor substrate.
The initial discharge amount of the vaporized organic solvent is 0.8 cc / sec or more and 1.5 cc / sec or less.
A semiconductor substrate drying device characterized by this.
4. In a semiconductor substrate drying apparatus in which the semiconductor substrate is dried by vaporizing the organic solvent and spraying the vaporized organic solvent onto the semiconductor substrate.
The amount of the organic solvent used in the drying is 70 cc / batch or more and 200 cc / batch or less.
A semiconductor substrate drying device characterized by this.
5. In a semiconductor substrate drying apparatus in which the semiconductor substrate is dried by vaporizing the organic solvent and spraying the vaporized organic solvent onto the semiconductor substrate.
The initial discharge amount of the vaporized organic solvent is set to 0.6 cc / sec or more and 1.5 cc / sec or less.
A semiconductor substrate drying device characterized by this.
6. In a semiconductor substrate drying apparatus in which the semiconductor substrate is dried by vaporizing the organic solvent and spraying the vaporized organic solvent onto the semiconductor substrate.
The amount of the organic solvent used in the drying is 50 cc / batch or more and 150 cc / batch or less.
A semiconductor substrate drying device characterized by this.
7. In a semiconductor substrate drying apparatus in which the organic solvent is vaporized and the vaporized organic solvent is sprayed onto the semiconductor substrate through a nozzle to dry the semiconductor substrate.
Three or more of the above nozzles are provided
A semiconductor substrate drying device characterized by this.
8. In a method for drying a semiconductor substrate, in which the organic solvent is vaporized and the vaporized organic solvent is sprayed onto the semiconductor substrate through a nozzle to dry the semiconductor substrate.
The vaporized organic solvent is sprayed onto the semiconductor substrate at an angle of 20 ° to 50 ° from the vertical direction toward the semiconductor substrate side.
A method for drying a semiconductor substrate.
9. In a method for drying a semiconductor substrate, in which the organic solvent is vaporized and the vaporized organic solvent is sprayed onto the semiconductor substrate through a nozzle to dry the semiconductor substrate.
The straight line connecting the center of the cross section of the nozzle and the center of the nozzle hole of the nozzle is the straight line connecting the center of the cross section of the nozzle and the center of the semiconductor substrate, and from the center of the cross section of the nozzle to the semiconductor substrate. Make sure it is between the drawn tangents
A method for drying a semiconductor substrate.
10. In a method for drying a semiconductor substrate, in which the organic solvent is vaporized and the vaporized organic solvent is sprayed onto the semiconductor substrate to dry the semiconductor substrate.
The initial discharge amount of the vaporized organic solvent is 0.8 cc / sec or more and 1.5 cc / sec or less.
A method for drying a semiconductor substrate.
11. In a method for drying a semiconductor substrate, in which the organic solvent is vaporized and the vaporized organic solvent is sprayed onto the semiconductor substrate to dry the semiconductor substrate.
The amount of the organic solvent used in the drying is 70 cc / batch or more and 200 cc / batch or less.
A method for drying a semiconductor substrate.
12. In a method for drying a semiconductor substrate, in which the organic solvent is vaporized and the vaporized organic solvent is sprayed onto the semiconductor substrate to dry the semiconductor substrate.
The initial discharge amount of the vaporized organic solvent is set to 0.6 cc / sec or more and 1.5 cc / sec or less.
A method for drying a semiconductor substrate.
13. In a method for drying a semiconductor substrate, in which the organic solvent is vaporized and the vaporized organic solvent is sprayed onto the semiconductor substrate to dry the semiconductor substrate.
The amount of the organic solvent used in the drying is 50 cc / batch or more and 150 cc / batch or less.
A method for drying a semiconductor substrate.
14. In a method for drying a semiconductor substrate, in which the organic solvent is vaporized and the vaporized organic solvent is sprayed onto the semiconductor substrate through a nozzle to dry the semiconductor substrate.
Three or more of the nozzles were provided, and the vaporized organic solvent was sprayed onto the semiconductor substrate through these nozzles.
A method for drying a semiconductor substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10843699A JP4311809B2 (en) | 1998-05-07 | 1999-04-15 | Semiconductor substrate drying apparatus and semiconductor substrate drying method |
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12493398 | 1998-05-07 | ||
| JP12493598 | 1998-05-07 | ||
| JP10-124933 | 1998-05-07 | ||
| JP10-124935 | 1998-05-07 | ||
| JP12493498 | 1998-05-07 | ||
| JP10-124934 | 1998-05-07 | ||
| JP10843699A JP4311809B2 (en) | 1998-05-07 | 1999-04-15 | Semiconductor substrate drying apparatus and semiconductor substrate drying method |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000031107A JP2000031107A (en) | 2000-01-28 |
| JP2000031107A5 true JP2000031107A5 (en) | 2006-03-30 |
| JP4311809B2 JP4311809B2 (en) | 2009-08-12 |
Family
ID=27469630
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10843699A Expired - Fee Related JP4311809B2 (en) | 1998-05-07 | 1999-04-15 | Semiconductor substrate drying apparatus and semiconductor substrate drying method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4311809B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4931042B2 (en) * | 2006-04-10 | 2012-05-16 | 株式会社ジェイ・イー・ティ | Substrate processing equipment |
| JP2012039163A (en) * | 2011-11-24 | 2012-02-23 | Jet Co Ltd | Substrate treatment device |
| CN114562874B (en) * | 2022-03-02 | 2023-07-04 | 浙江光特科技有限公司 | Be used for wafer to wash back drying device |
| CN116544144B (en) * | 2023-05-16 | 2023-10-27 | 江苏亚电科技有限公司 | Wafer cleaning, drying and lifting mechanism with air injection function |
-
1999
- 1999-04-15 JP JP10843699A patent/JP4311809B2/en not_active Expired - Fee Related
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