JP2000030871A - Organic el element - Google Patents
Organic el elementInfo
- Publication number
- JP2000030871A JP2000030871A JP10193315A JP19331598A JP2000030871A JP 2000030871 A JP2000030871 A JP 2000030871A JP 10193315 A JP10193315 A JP 10193315A JP 19331598 A JP19331598 A JP 19331598A JP 2000030871 A JP2000030871 A JP 2000030871A
- Authority
- JP
- Japan
- Prior art keywords
- organic
- anode
- element substrate
- layer
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010410 layer Substances 0.000 claims abstract description 63
- 239000000758 substrate Substances 0.000 claims abstract description 44
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 35
- 239000000463 material Substances 0.000 claims abstract description 29
- 239000012044 organic layer Substances 0.000 claims abstract description 19
- 229920001721 polyimide Polymers 0.000 claims abstract description 19
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000004642 Polyimide Substances 0.000 claims abstract description 10
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 claims abstract description 10
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000000292 calcium oxide Substances 0.000 claims abstract description 9
- 230000002093 peripheral effect Effects 0.000 claims abstract description 7
- 238000007789 sealing Methods 0.000 claims description 17
- 239000012298 atmosphere Substances 0.000 claims description 2
- 239000010408 film Substances 0.000 abstract description 35
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 16
- 239000010409 thin film Substances 0.000 abstract description 11
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 8
- 229910052751 metal Inorganic materials 0.000 abstract description 6
- 239000002184 metal Substances 0.000 abstract description 6
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 239000011521 glass Substances 0.000 abstract description 4
- 238000004020 luminiscence type Methods 0.000 abstract description 4
- 239000011261 inert gas Substances 0.000 abstract description 3
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- 239000000243 solution Substances 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 230000005525 hole transport Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000011575 calcium Substances 0.000 description 4
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 4
- 150000002894 organic compounds Chemical class 0.000 description 4
- AXCZMVOFGPJBDE-UHFFFAOYSA-L calcium dihydroxide Chemical compound [OH-].[OH-].[Ca+2] AXCZMVOFGPJBDE-UHFFFAOYSA-L 0.000 description 3
- 239000000920 calcium hydroxide Substances 0.000 description 3
- 229910001861 calcium hydroxide Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000011358 absorbing material Substances 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- APLQAVQJYBLXDR-UHFFFAOYSA-N aluminum quinoline Chemical compound [Al+3].N1=CC=CC2=CC=CC=C12.N1=CC=CC2=CC=CC=C12.N1=CC=CC2=CC=CC=C12 APLQAVQJYBLXDR-UHFFFAOYSA-N 0.000 description 2
- RQPZNWPYLFFXCP-UHFFFAOYSA-L barium dihydroxide Chemical compound [OH-].[OH-].[Ba+2] RQPZNWPYLFFXCP-UHFFFAOYSA-L 0.000 description 2
- 229910001863 barium hydroxide Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 229910000733 Li alloy Inorganic materials 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- NRCMAYZCPIVABH-UHFFFAOYSA-N Quinacridone Chemical compound N1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3NC1=C2 NRCMAYZCPIVABH-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- HFACYLZERDEVSX-UHFFFAOYSA-N benzidine Chemical compound C1=CC(N)=CC=C1C1=CC=C(N)C=C1 HFACYLZERDEVSX-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000001989 lithium alloy Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- -1 or the like Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 239000011882 ultra-fine particle Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/874—Passivation; Containers; Encapsulations including getter material or desiccant
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、少なくとも一方が
透明電極からなる一対の電極間に有機化合物材料の薄膜
が積層された有機エレクトロルミネッセンス素子(以
下、有機EL素子と略称する)に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic electroluminescence device (hereinafter abbreviated as an organic EL device) in which a thin film of an organic compound material is laminated between a pair of electrodes at least one of which is a transparent electrode.
【0002】[0002]
【従来の技術】有機EL素子は、蛍光性有機化合物を含
む薄膜を陰極と陽極の間に挟んだ構造を有し、前記薄膜
に正孔及び電子を注入して再結合させることにより励起
子(エキシトン)を生成させ、この励起子が失活する際
の光の放出(蛍光・燐光)を利用して表示を行う素子で
ある。2. Description of the Related Art An organic EL device has a structure in which a thin film containing a fluorescent organic compound is sandwiched between a cathode and an anode, and holes and electrons are injected into the thin film and recombined to form excitons. An exciton is generated, and display is performed using light emission (fluorescence / phosphorescence) when the exciton is deactivated.
【0003】図2はこの種の一般的な有機EL素子の構
成を示す側断面図である。図2に示す有機EL素子は、
絶縁性及び透光性を有するガラス基板からなる素子基板
1を基部としている。素子基板1の上には、透明導電膜
による陽極2が形成されている。透明導電膜による陽極
2は、発光エリア3のパターンを形作るように透孔4を
有して素子基板1の上に形成される。FIG. 2 is a side sectional view showing the structure of a general organic EL device of this type. The organic EL device shown in FIG.
An element substrate 1 made of a glass substrate having an insulating property and a light transmitting property is used as a base. An anode 2 made of a transparent conductive film is formed on the element substrate 1. The anode 2 made of a transparent conductive film is formed on the element substrate 1 with a through hole 4 so as to form a pattern of the light emitting area 3.
【0004】透明導電膜からなる陽極2の透孔4内に
は、ポリミイド膜からなる絶縁層5が形成されている。
絶縁層5は、発光エリア3のパターンを形作るととも
に、透明導電膜による陽極2のパターンニング時に生じ
る透孔4のエッジ部分4aの微小な突起を覆い、このエ
ッジ部分4aでの電界集中による+−電極間のショート
を防止している。An insulating layer 5 made of a polyimide film is formed in a through hole 4 of the anode 2 made of a transparent conductive film.
The insulating layer 5 forms the pattern of the light emitting area 3 and covers minute projections of the edge portion 4a of the through hole 4 generated at the time of patterning the anode 2 by the transparent conductive film. Short circuit between electrodes is prevented.
【0005】図2に示すように、陽極2の上には有機化
合物材料の薄膜による有機層6が積層されている。図2
における有機層6は、正孔注入層としての銅フタロシア
ニン(CuPc)有機膜6aと、正孔輸送層としてのBi
s(N-(1-naphyl)-N-phneyl)benzidine (α−NPD)有
機膜6bと、発光層兼電子輸送層としてのアルミキノリ
ン(Alq3 )有機膜6cとの3層構造からなり、発光
エリア3を形成している。As shown in FIG. 2, an organic layer 6 made of a thin film of an organic compound material is laminated on the anode 2. FIG.
The organic layer 6 is formed of a copper phthalocyanine (CuPc) organic film 6a as a hole injection layer, and a Bi as a hole transport layer.
It has a three-layer structure of an organic film 6b of s (N- (1-naphyl) -N-phneyl) benzidine (α-NPD) and an aluminum quinoline (Alq 3 ) organic film 6c as an emission layer and an electron transport layer, A light emitting area 3 is formed.
【0006】図2に示すように、有機層6(Alq3 有
機膜6c)の上にはAl:Li合金の金属薄膜からなる
陰極7が形成されている。素子基板1の外周縁部分には
封止部材としての封止基板8が接着剤により固着され、
パッケージ9が構成される。パッケージ9の内部には、
ドライエアー又は不活性ガス(例えばドライ窒素)Gが
封じ込まれている。As shown in FIG. 2, a cathode 7 made of a metal thin film of an Al: Li alloy is formed on the organic layer 6 (Alq 3 organic film 6c). A sealing substrate 8 as a sealing member is fixed to an outer peripheral portion of the element substrate 1 with an adhesive,
A package 9 is configured. Inside the package 9,
Dry air or an inert gas (for example, dry nitrogen) G is sealed.
【0007】上記有機EL素子では、陽極2と陰極7と
の間に電圧を印加して定電流を流すと、有機層6に対
し、陽極2から正孔が、陰極7から電子がそれぞれ注入
される。そして、注入された正孔と電子が有機層6で再
結合して励起子を生成し、この励起子が失活する際の光
の放出により所望の表示がなされる。その際の発光は、
透明導電膜による陽極2を介して素子基板1側から観測
される。In the organic EL device, when a voltage is applied between the anode 2 and the cathode 7 to cause a constant current to flow, holes are injected from the anode 2 and electrons are injected from the cathode 7 into the organic layer 6. You. Then, the injected holes and electrons are recombined in the organic layer 6 to generate excitons, and a desired display is performed by emission of light when the excitons are deactivated. The luminescence at that time is
It is observed from the element substrate 1 side through the anode 2 made of a transparent conductive film.
【0008】ところで、上記のように構成される有機E
L素子の最大の課題は耐久性の改善であり、その中でも
ダークスポットと呼ばれる非発光部の発生と成長が最も
大きな問題となっている。ダークスポットが発生する原
因としては、水分及び酸素の影響が最も大きいとされ、
特に水分は極めて微量でも大きな影響を及ぼすものとさ
れている。[0008] By the way, the organic E constituted as described above is used.
The biggest problem of the L element is to improve the durability. Among them, the generation and growth of a non-light emitting portion called a dark spot is the most important problem. The cause of the dark spot is considered to be the largest effect of moisture and oxygen,
In particular, even a very small amount of water is considered to have a great effect.
【0009】そこで、使用する有機材料の精製、成膜時
の真空の質、素子の封止など、水分を極力取り除く工夫
を実施し、ドライプロセスで製作している。しかしなが
ら、それでも十分な特性が得られていないのが現状であ
る。実際に市販されているELディスプレイにおいて
も、初期段階で20μm前後のダークスポットが多数発
生しており、対策の困難さが伺える。[0009] Therefore, a device for removing moisture as much as possible, such as purification of an organic material to be used, quality of a vacuum at the time of film formation, sealing of an element, etc., is implemented, and is manufactured by a dry process. However, at present, sufficient characteristics have not yet been obtained. Even in a commercially available EL display, a large number of dark spots of about 20 μm are generated in the initial stage, which indicates difficulty in countermeasures.
【0010】このように、有機EL素子の最大の課題は
ダークスポットを根絶して長寿命化を図ることであり、
素子を封止することで大幅に改善できる。加えて、封止
基板に別途捕水材を固定することでにより改善が進んで
いる。As described above, the biggest problem of the organic EL element is to eradicate dark spots and extend the life.
Significant improvement can be achieved by sealing the element. In addition, improvement is progressing by separately fixing a water catching material to the sealing substrate.
【0011】ところが、有機EL素子を表示デバイスと
して実用化するためには、図2に示すように、陽極2と
陰極7の絶縁性を高めるためにポリイミド膜等による絶
縁層5を陽極2上に形成する必要がある。However, in order to put the organic EL element into practical use as a display device, as shown in FIG. 2, an insulating layer 5 made of a polyimide film or the like is formed on the anode 2 in order to enhance the insulation between the anode 2 and the cathode 7. Need to be formed.
【0012】そこで、上述した図2に示す有機EL素子
では、封止基板8で露点−70℃程度のドライ窒素を紫
外線硬化樹脂等の接着剤を用いて内部に封じ込み、ダー
クスポットの成長を抑えるための封止構造を採用してい
る。この構造により、ドライ状態を保ち、ダークスポッ
トの発生、成長を抑えている。Therefore, in the above-described organic EL device shown in FIG. 2, dry nitrogen having a dew point of about -70 ° C. is sealed in the sealing substrate 8 using an adhesive such as an ultraviolet curable resin to prevent dark spots from growing. It employs a sealing structure to suppress it. This structure maintains a dry state and suppresses the generation and growth of dark spots.
【0013】[0013]
【発明が解決しようとする課題】しかしながら、図2に
示す構成の有機EL素子を連続点灯させると、発光エリ
ア3(有機層6)と絶縁層5との境界から非発光部分が
現れ、発光エリア3の中央へ向かい広がるといった問題
が生じる。この原因は、パッケージ9内の絶縁層5をな
すポリイミド膜中に存在する微量の水分と考えられ、密
着した有機層6に水分が触れて非発光部を誘発させたと
推測される。However, when the organic EL device having the structure shown in FIG. 2 is continuously lit, a non-light emitting portion appears from the boundary between the light emitting area 3 (organic layer 6) and the insulating layer 5, and the light emitting area 3 3 spreads toward the center. The cause is considered to be a trace amount of moisture present in the polyimide film forming the insulating layer 5 in the package 9, and it is presumed that the non-light-emitting portion was induced by the moisture coming into contact with the adhered organic layer 6.
【0014】また、上記のように発光エリア3に非発光
部分が現れると、その発光エリア3の発光面積が小さく
なり、電流密度が大きくなる。その結果、その発光エリ
ア3に印加される電圧が上昇して過電流が流れ、素子を
損傷させる恐れがあった。When a non-light-emitting portion appears in the light-emitting area 3 as described above, the light-emitting area of the light-emitting area 3 decreases, and the current density increases. As a result, the voltage applied to the light emitting area 3 rises, causing an overcurrent to flow, possibly damaging the element.
【0015】そこで、本発明は、上記問題点に鑑みてな
されたものであり、発光エリアの非発光部の発生を抑
え、発光エリアを長時間にわたって初期と同様の状態に
保つことができる有機EL素子を提供することを目的と
している。In view of the above, the present invention has been made in view of the above-mentioned problems, and an organic EL device capable of suppressing the occurrence of non-light-emitting portions in a light-emitting area and keeping the light-emitting area in the same state as the initial state for a long time. It is intended to provide an element.
【0016】[0016]
【課題を解決するための手段】上記目的を達成するた
め、請求項1の発明に係る有機EL素子は、素子基板
と、発光エリアのパターンを形作るように透孔を有して
前記素子基板の上に形成された導電膜からなる第1の電
極と、前記透孔を埋めて該透孔のエッジ部分を覆うよう
に前記第1の電極の上に形成された絶縁層と、前記第1
の電極及び前記絶縁層の上に形成された発光層を含む有
機層と、前記有機層の上に形成された導電膜からなる第
2の電極と、内部がドライ雰囲気に保たれた状態で前記
素子基板の外周部分に封着される封止部材とを備えた有
機EL素子において、前記絶縁層中に捕水材を含有した
ことを特徴としている。In order to achieve the above object, an organic EL device according to a first aspect of the present invention has an element substrate and a through hole so as to form a pattern of a light emitting area. A first electrode made of a conductive film formed thereon, an insulating layer formed on the first electrode so as to fill the through hole and cover an edge portion of the through hole,
An organic layer including a light emitting layer formed on the electrode and the insulating layer; a second electrode formed of a conductive film formed on the organic layer; and An organic EL device comprising a sealing member sealed to an outer peripheral portion of an element substrate, wherein a water catching material is contained in the insulating layer.
【0017】請求項2の発明は、請求項1の有機EL素
子において、前記2つの電極の少なくとも一方が透明性
を有する導電膜からなることを特徴としている。According to a second aspect of the present invention, in the organic EL device of the first aspect, at least one of the two electrodes is formed of a conductive film having transparency.
【0018】請求項3の発明は、請求項1又は2の有機
EL素子において、前記絶縁層は、捕水材を混合・分散
させたポリイミド溶液を熱処理したポリイミド膜からな
ることを特徴としている。According to a third aspect of the present invention, in the organic EL device according to the first or second aspect, the insulating layer is made of a polyimide film obtained by heat-treating a polyimide solution in which a water catching material is mixed and dispersed.
【0019】請求項4の発明は、請求項1〜3のいずれ
かの有機EL素子において、前記捕水材は、酸化カルシ
ウム又は酸化バリウムからなることを特徴としている。According to a fourth aspect of the present invention, in the organic EL device according to any one of the first to third aspects, the water catching material is made of calcium oxide or barium oxide.
【0020】本発明によれば、絶縁層を構成するポリイ
ミド膜中に混合・分散された酸化カルシウムCaO(又
は酸化バリウムBaO)からなる捕水材が、水と化学反
応を起こして水酸化カルシウムCa(OH)2 (又は水
酸化バリウムBa(OH)2)を生成し、水分を吸着保
持する。According to the present invention, the water-absorbing material composed of calcium oxide CaO (or barium oxide BaO) mixed and dispersed in the polyimide film constituting the insulating layer causes a chemical reaction with water to produce calcium hydroxide Ca. (OH) 2 (or barium hydroxide Ba (OH) 2 ) is generated to absorb and hold moisture.
【0021】[0021]
【発明の実施の形態】図1は本発明による有機EL素子
の実施の形態を示す側断面図である。なお、図2の有機
EL素子と同一の構成要素には同一番号を付して説明す
る。FIG. 1 is a side sectional view showing an embodiment of an organic EL device according to the present invention. Note that the same components as those of the organic EL element in FIG.
【0022】図1に示すように、有機EL素子は、絶縁
性及び透光性を有するガラス基板からなる素子基板1を
基部としている。素子基板1の上には、透明性を有する
導電材料として、ITO(Indium Tin Oxide)による透
明導電膜が形成されている。透明導電膜は、例えば真空
蒸着法、スパッタ法等のPVD(Physical Vapor Depos
ition )法により成膜され、電極としての陽極2を構成
している。透明導電膜による陽極2は、発光エリア3の
パターンを形作るように透孔4を有して素子基板1の上
に形成される。陽極2の一部は、素子基板1の端部まで
引き出されて不図示の電源回路に接続される。As shown in FIG. 1, the organic EL element is based on an element substrate 1 made of a glass substrate having an insulating property and a light transmitting property. On the element substrate 1, a transparent conductive film made of ITO (Indium Tin Oxide) is formed as a conductive material having transparency. The transparent conductive film can be formed, for example, by PVD (Physical Vapor Depos
)) to form an anode 2 as an electrode. The anode 2 made of a transparent conductive film is formed on the element substrate 1 with a through hole 4 so as to form a pattern of the light emitting area 3. A part of the anode 2 is drawn out to the end of the element substrate 1 and connected to a power supply circuit (not shown).
【0023】透明導電膜からなる陽極2の上には、透孔
4を埋めて透孔4のエッジ部分4aを覆うようにして捕
水材16を含有した絶縁層15が形成されている。絶縁
層15は、発光エリア3のパターンを形作るとともに、
透明導電膜による陽極2のパターンニング時に生じる透
孔4のエッジ部分4aの微小な突起を覆い、エッジ部分
4aでの電界集中による+−電極間(陽極2と陰極7の
間)のショートを防止している。On the anode 2 made of a transparent conductive film, an insulating layer 15 containing a water catching material 16 is formed so as to fill the through hole 4 and cover the edge 4a of the through hole 4. The insulating layer 15 forms the pattern of the light emitting area 3 and
Covers minute projections at the edge portion 4a of the through hole 4 generated when the anode 2 is patterned by the transparent conductive film, and prevents short circuit between the + and-electrodes (between the anode 2 and the cathode 7) due to electric field concentration at the edge portion 4a. are doing.
【0024】捕水材16は、粒径が数μm以下(好まし
くはナノサイズ)の超微粒子からなる非導電性物質、例
えば酸化カルシウム(CaO)、酸化バリウム(Ba
O)で構成される。捕水材16は、化学吸着により水分
を吸着した状態を保持している。The water-absorbing material 16 is made of a non-conductive substance composed of ultrafine particles having a particle size of several μm or less (preferably nano-sized), for example, calcium oxide (CaO), barium oxide (Ba).
O). The water catching material 16 maintains a state of absorbing water by chemical adsorption.
【0025】更に説明すると、捕水材16が酸化カルシ
ウムCaOで構成される場合は、CaOが水と化学反応
して水酸化カルシウムCa(OH)2 を生成し、この生
成された水酸化カルシウムCa(OH)2 を保持して水
分を吸着する。同様に、捕水材16が酸化バリウムBa
Oで構成される場合にも、酸化バリウムBaOが水と化
学反応して生成される水酸化バリウムBa(OH)2 を
保持して水分を吸着する。More specifically, when the water catching material 16 is made of calcium oxide CaO, CaO chemically reacts with water to produce calcium hydroxide Ca (OH) 2, and the produced calcium hydroxide Ca (OH) 2 is retained to adsorb moisture. Similarly, the water catching material 16 is made of barium oxide Ba.
Even in the case of being composed of O, barium oxide BaO retains barium hydroxide Ba (OH) 2 generated by a chemical reaction with water to adsorb water.
【0026】上記捕水材16を含有した絶縁層15は、
捕水材16が混合・分散されたポリイミド溶液から形成
される。具体的に、ポリイミド溶液は、露点−70℃以
下のドライ窒素に置換したグローブボックス中で、捕水
材16として2gの酸化カルシウム粉末(又は酸化バリ
ウム粉末)を100mlの感光性ポリイミド溶液(例え
ば、商品名:パイメルG−7650E、旭化成株式会社
製)に入れ、攪拌して分散させることにより作製され
る。このポリイミド溶液が作製されたグローブボックス
は、真空度1Torrにされて脱気が行われる。The insulating layer 15 containing the water catching material 16
The water catching material 16 is formed from the mixed and dispersed polyimide solution. Specifically, in a glove box substituted with dry nitrogen having a dew point of −70 ° C. or less, 2 g of calcium oxide powder (or barium oxide powder) is used as the water catching material 16 in 100 ml of a photosensitive polyimide solution (for example, (Trade name: Pymel G-7650E, manufactured by Asahi Kasei Corporation) and stirred to disperse. The glove box in which the polyimide solution has been prepared is degassed at a degree of vacuum of 1 Torr.
【0027】図1に示すように、陽極2の上には有機化
合物材料の薄膜による有機層6が積層されている。図1
における有機層6は、PVD法により陽極の上に数10
nmの膜厚で成膜された正孔注入層としてのCuPc有
機膜6aと、CuPc有機膜6aの上に数10nmの膜
厚で成膜された正孔輸送層としてのα−NPD有機膜6
bと、α−NPD有機膜6bの上に数10nmの膜厚で
成膜された発光層兼電子輸送層としてのAlq3 有機膜
6cとの3層構造からなり、所定パターン形状の発光エ
リア3を形成している。As shown in FIG. 1, an organic layer 6 made of a thin film of an organic compound material is laminated on the anode 2. FIG.
Of the organic layer 6 on the anode by PVD method
a CuPc organic film 6a as a hole injection layer formed with a thickness of 10 nm, and an α-NPD organic film 6 as a hole transport layer formed with a thickness of several tens nm on the CuPc organic film 6a.
and a three-layer structure of an Alq 3 organic film 6c as a light-emitting layer and an electron transport layer formed on the α-NPD organic film 6b with a thickness of several tens of nanometers. Is formed.
【0028】図1に示すように、有機層6(Alq3 有
機膜6c)の上には金属薄膜が形成されている。金属薄
膜は、例えばAl、Li、Mg、Ag、In等の仕事関
数の小さい金属材料単体やMg:Ag、Al:Li等の
仕事関数の小さい合金からなる。金属薄膜は、PVD法
により例えば数10〜数100nmの膜厚で成膜され、
電極としての陰極7を構成している。陰極7の一部は、
素子基板1の端部まで引き出されて不図示の電源回路に
接続される。As shown in FIG. 1, a metal thin film is formed on the organic layer 6 (Alq 3 organic film 6c). The metal thin film is made of, for example, a metal material having a small work function, such as Al, Li, Mg, Ag, In, or the like, or an alloy having a small work function, such as Mg: Ag or Al: Li. The metal thin film is formed with a thickness of, for example, several tens to several hundreds of nm by a PVD method,
A cathode 7 is formed as an electrode. Part of the cathode 7 is
It is pulled out to the end of the element substrate 1 and connected to a power supply circuit (not shown).
【0029】素子基板1の外周縁部分には、封止部材と
しての封止基板8が例えば紫外線硬化樹脂等の接着剤に
より固着されている。これにより、素子基板1上に形成
された素子を保護するパッケージ9が構成される。パッ
ケージ9の内部には、例えば露点−70℃程度の窒素、
ヘリウム、ネオン、アルゴン等の不活性ガスやドライエ
ア等の活性の低いガスが封入ガスGとして封じ込まれて
いる。A sealing substrate 8 as a sealing member is fixed to an outer peripheral portion of the element substrate 1 with an adhesive such as an ultraviolet curing resin. Thus, a package 9 for protecting the element formed on the element substrate 1 is configured. Inside the package 9, for example, nitrogen having a dew point of about -70 ° C,
An inert gas such as helium, neon, or argon, or a low-activity gas such as dry air is sealed as the sealing gas G.
【0030】次に、上記構成による有機EL素子の製造
方法について説明する。まず、素子基板1の上に透明導
電膜(ITO)を例えばスパッタ法により150nm程
度の膜厚で成膜して陽極2を積層形成する。この透明導
電膜は、所定パターンによる発光エリア3を形作るよう
に透孔4を有して素子基板2の上に成膜される。Next, a method of manufacturing an organic EL device having the above-described configuration will be described. First, a transparent conductive film (ITO) is formed to a thickness of about 150 nm on the element substrate 1 by, for example, a sputtering method, and the anode 2 is formed by lamination. The transparent conductive film is formed on the element substrate 2 with the through holes 4 so as to form the light emitting area 3 according to a predetermined pattern.
【0031】次に、透孔4を有する所定パターン形状の
陽極2を形成した素子基板1に対し、捕水材16を混合
・分散したポリイミド溶液をスピンコートし、プリベー
ク、露光、現像、ポストベークの順で行う。これによ
り、陽極2の上には捕水材16を含有した所望のポリイ
ミドパターンが形成される。Next, the element substrate 1 on which the anode 2 having a predetermined pattern shape having the through-holes 4 is formed, is spin-coated with a polyimide solution in which a water trapping material 16 is mixed and dispersed, and is subjected to pre-baking, exposure, development, and post-baking. The order is as follows. As a result, a desired polyimide pattern containing the water catching material 16 is formed on the anode 2.
【0032】なお、上記ポリイミドパターンは、スピン
コート法の他、ディッピング法、ドクターブレード法、
アプリケーター法、転写法等の方法を用いて形成するこ
ともできる。The polyimide pattern can be formed by a dipping method, a doctor blade method,
It can also be formed using a method such as an applicator method or a transfer method.
【0033】続いて、素子基板1を大気又は窒素雰囲気
中で例えば300〜400℃で1時間の熱処理を行う。
これにより、素子基板1の陽極2の上には、透孔4を孔
埋めし、かつ透孔4のエッジ部分4aを覆うようにし
て、捕水材16を含有したポリイミド膜による膜厚1〜
20μm程度(好ましくは、1〜10μm)の絶縁層1
5が形成される。Subsequently, the element substrate 1 is subjected to a heat treatment at 300 to 400 ° C. for one hour in an air or nitrogen atmosphere.
As a result, on the anode 2 of the element substrate 1, the through hole 4 is filled and the edge portion 4 a of the through hole 4 is covered, so that the film thickness 1 to 1 of the polyimide film containing the water catching material 16 is formed.
Insulating layer 1 of about 20 μm (preferably 1 to 10 μm)
5 are formed.
【0034】次に、陽極2及び絶縁層15が積層形成さ
れた素子基板1を洗浄(例えばUVオゾン洗浄)する。
洗浄された素子基板1に対し、蒸着装置内で抵抗加熱に
より有機層6、陰極7を順次蒸着して成膜する。そし
て、露点−70℃以下のドライ窒素で蒸着装置をパージ
し、同様のドライ窒素で置換したグローブボックスに大
気に曝すことなく素子基板1を移動させる。Next, the element substrate 1 on which the anode 2 and the insulating layer 15 are laminated is washed (for example, UV ozone washing).
On the cleaned element substrate 1, an organic layer 6 and a cathode 7 are sequentially deposited by resistance heating in a deposition apparatus to form a film. Then, the deposition apparatus is purged with dry nitrogen having a dew point of −70 ° C. or less, and the element substrate 1 is moved to a glove box replaced with the same dry nitrogen without exposing to the atmosphere.
【0035】ここで、上記工程とは別工程で、予め洗浄
して水分を除去した封止基板8の外周縁部分に接着剤と
しての紫外線硬化樹脂を塗布しておく。そして、接着剤
の塗布された封止基板8を素子基板1の外周縁部分に対
向して張り付け、紫外線で硬化して素子基板1と封止基
板8の間を固定し、内部にガスG(ドライ窒素)が封入
されたパッケージ9を構成する。これにより、図1の構
成による有機EL素子が完成する。Here, in a step different from the above step, an ultraviolet curable resin as an adhesive is applied to the outer peripheral edge portion of the sealing substrate 8 from which water has been removed by washing in advance. Then, the sealing substrate 8 to which the adhesive has been applied is adhered to the outer peripheral edge portion of the element substrate 1 so as to be cured by ultraviolet rays to fix the space between the element substrate 1 and the sealing substrate 8, and the gas G ( A package 9 in which dry nitrogen is enclosed is formed. Thus, the organic EL device having the configuration shown in FIG. 1 is completed.
【0036】上記のように製造された有機EL素子の陽
極2を正極、陰極7を負極に接続し、直流電圧を印加し
て電流密度10mA/cm2 の定電流駆動で連続点灯さ
せた。その結果、2000時間経過後の発光状態は初期
と何ら変わらず、発光エリア3(有機層6)と絶縁層1
5の境界からダークスポットによる非発光部は現れるこ
とはなかった。The anode 2 of the organic EL device manufactured as described above was connected to the positive electrode and the cathode 7 was connected to the negative electrode. A continuous current was applied by applying a DC voltage to drive the device continuously at a constant current of 10 mA / cm 2 . As a result, the light emission state after the lapse of 2000 hours is not different from the initial state, and the light emission area 3 (organic layer 6) and the insulating layer 1
No non-light-emitting portion due to a dark spot appeared from the boundary of No. 5.
【0037】これに対し、上記と同一条件で図2に示す
構成の有機EL素子を連続点灯した場合には、300〜
500時間が経過した所で発光エリアにダークスポット
による非発光部が現れた。On the other hand, when the organic EL element having the structure shown in FIG.
After 500 hours, a non-light-emitting portion due to a dark spot appeared in the light-emitting area.
【0038】このように、上記実施の形態によれば、捕
水材16を混合・分散したポリイミド溶液を熱処理した
ポリイミド膜により絶縁層15が形成され、絶縁層15
中の捕水材16が水と化学反応を起こして水分を吸着保
持するので、絶縁層15と発光エリア3(有機層6)の
境界からの非発光部の発生を抑えることができる。As described above, according to the above embodiment, the insulating layer 15 is formed by the polyimide film obtained by heat-treating the polyimide solution in which the water trapping material 16 is mixed and dispersed.
Since the water trapping material 16 inside causes a chemical reaction with water to adsorb and hold moisture, it is possible to suppress generation of a non-light emitting portion from a boundary between the insulating layer 15 and the light emitting area 3 (organic layer 6).
【0039】その結果、発光エリア3の形状は、長時間
にわたって初期と同様の状態を保つことができる。そし
て、発光エリア3の発光面積の減少が殆どないため、発
光エリア3の発光面積の減少による電流密度の増大に伴
う電圧上昇が抑えられ、無駄な電力消費を減少させるこ
とができる。As a result, the shape of the light emitting area 3 can maintain the same state as the initial state for a long time. Since the light emitting area of the light emitting area 3 hardly decreases, a voltage increase due to an increase in current density due to a decrease in the light emitting area of the light emitting area 3 can be suppressed, and wasteful power consumption can be reduced.
【0040】ところで、図示の例では、有機層6として
CuPc有機膜6a、α−NPD有機膜6b、Alq3
有機膜6cの3層構造のものについて説明したが、発光
層と電荷輸送層(正孔輸送層、正孔注入・輸送層、電子
注入層、電子注入・輸送層等)との組合せで構成するこ
とができる。By the way, in the illustrated example, the CuPc organic film 6a, the α-NPD organic film 6b, the Alq 3
Although the three-layer structure of the organic film 6c has been described, the organic film 6c is composed of a combination of a light emitting layer and a charge transport layer (a hole transport layer, a hole injection / transport layer, an electron injection layer, an electron injection / transport layer, etc.). be able to.
【0041】具体的には、発光層1層のみ、発光層と正
孔輸送層の2層、発光層と電子注入層の2層、正孔輸送
層と発光層と電子注入層の3層等で構成される。発光層
の発光材料としては、発光層そのものを発光させる場合
には、例えばアルミキノリン(Alq3 )やジスチルア
リーレン系化合物等が使用される。発光層に別の発光材
料(ドーパント)を微量ドーピングすることで発光させ
る場合には、ドーパントとしてキナクリドン(Qd)や
レーザ用の色素等が使用される。Specifically, only one light emitting layer, two layers of a light emitting layer and a hole transport layer, two layers of a light emitting layer and an electron injection layer, three layers of a hole transport layer, a light emitting layer and an electron injection layer, and the like. It consists of. In the case where the light emitting layer itself emits light, for example, aluminum quinoline (Alq 3 ) or a distilylylene-based compound is used as the light emitting material of the light emitting layer. When light emission is performed by doping a small amount of another light-emitting material (dopant) into the light-emitting layer, quinacridone (Qd), a dye for laser, or the like is used as the dopant.
【0042】また、電子注入層としては、電子の注入を
し易くするため、例えばLi、Na、Mg、Ca等の仕
事関数の小さい金属材料単体、又は例えばAl:Li、
Mg:In、Mg:Ag等の仕事関数の小さい合金が使
用される。As the electron injection layer, a metal material having a small work function, such as Li, Na, Mg, Ca, or the like, or Al: Li,
An alloy having a small work function such as Mg: In or Mg: Ag is used.
【0043】上記実施の形態では、素子基板1の上に透
孔4を有する透明導電膜による陽極2を形成した構成と
したが、透明導電膜からなる陽極2と金属薄膜からなる
陰極7とを逆転させた構成としてもよい。その場合、陽
極2側から発光が観測されるため、素子基板1は必ずし
も透光性を有する必要はなく、絶縁性を有するガラス基
板で構成することができる。In the above embodiment, the anode 2 made of the transparent conductive film having the through holes 4 is formed on the element substrate 1. However, the anode 2 made of the transparent conductive film and the cathode 7 made of the metal thin film are used. The configuration may be reversed. In this case, since light emission is observed from the anode 2 side, the element substrate 1 does not necessarily need to have a light-transmitting property, and can be formed of a glass substrate having an insulating property.
【0044】また、一対の電極をなす陽極2と陰極7
は、少なくとも一方が透明性を有する導電材料(透明電
極)で形成されていればよい。その際、両方の電極が透
明性を有する導電材料の場合には、一方の電極に仕事関
数の大きい透明性を有する導電材料(ITO)を使用
し、他方の電極に仕事関数の小さい透明性を有する導電
材料を使用する。An anode 2 and a cathode 7 forming a pair of electrodes
It is sufficient that at least one is formed of a conductive material (transparent electrode) having transparency. At this time, when both electrodes are made of a conductive material having transparency, a conductive material having a large work function (ITO) is used for one electrode, and a transparent material having a small work function is used for the other electrode. Use a conductive material having
【0045】[0045]
【発明の効果】以上の説明で明らかなように、本発明に
よれば、絶縁層が捕水材を含有して形成され、絶縁層中
の捕水材が水と化学反応を起こして水分を吸着保持する
ので、絶縁層と発光エリアの境界からの非発光部の発生
を抑えることができる。As is apparent from the above description, according to the present invention, the insulating layer is formed to contain the water catching material, and the water catching material in the insulating layer causes a chemical reaction with water to remove water. Since the holding is performed by suction, generation of a non-light emitting portion from the boundary between the insulating layer and the light emitting area can be suppressed.
【0046】その結果、発光エリアの形状は、長時間に
わたり初期と同様の状態を保つことができる。そして、
発光エリアの発光面積の減少が殆どないため、発光エリ
アの発光面積の減少による電流密度の増大に伴う電圧上
昇が抑えられ、無駄な電力消費を減少させることができ
る。As a result, the shape of the light emitting area can maintain the same state as the initial state for a long time. And
Since the light emitting area of the light emitting area hardly decreases, a voltage increase due to an increase in current density due to a decrease in the light emitting area of the light emitting area can be suppressed, and wasteful power consumption can be reduced.
【図1】本発明による有機EL素子の実施の形態を示す
側断面図FIG. 1 is a side sectional view showing an embodiment of an organic EL device according to the present invention.
【図2】一般的な有機EL素子の構成を示す側断面図FIG. 2 is a side sectional view showing a configuration of a general organic EL element.
1…素子基板、2…陽極、3…発光エリア、4…透孔、
4a…エッジ部分、5…絶縁層、6…有機層、7…陰
極、8…封止基板、G…封入ガス。DESCRIPTION OF SYMBOLS 1 ... Element board, 2 ... Anode, 3 ... Light-emitting area, 4 ... Through-hole,
4a: edge portion, 5: insulating layer, 6: organic layer, 7: cathode, 8: sealing substrate, G: sealing gas.
Claims (4)
作るように透孔を有して前記素子基板の上に形成された
導電膜からなる第1の電極と、前記透孔を埋めて該透孔
のエッジ部分を覆うように前記第1の電極の上に形成さ
れた絶縁層と、前記第1の電極及び前記絶縁層の上に形
成された発光層を含む有機層と、前記有機層の上に形成
された導電膜からなる第2の電極と、内部がドライ雰囲
気に保たれた状態で前記素子基板の外周部分に封着され
る封止部材とを備えた有機EL素子において、 前記絶縁層中に捕水材を含有したことを特徴とする有機
EL素子。1. An element substrate, a first electrode formed of a conductive film having a through hole so as to form a pattern of a light emitting area, and formed of a conductive film formed on the element substrate; An insulating layer formed on the first electrode so as to cover an edge portion of the hole; an organic layer including a light emitting layer formed on the first electrode and the insulating layer; An organic EL device comprising: a second electrode made of a conductive film formed thereon; and a sealing member sealed to an outer peripheral portion of the element substrate while the inside is kept in a dry atmosphere. An organic EL device comprising a layer containing a water catching material.
性を有する導電膜からなる請求項1記載の有機EL素
子。2. The organic EL device according to claim 1, wherein at least one of the two electrodes is made of a conductive film having transparency.
たポリイミド溶液を熱処理したポリイミド膜からなる請
求項1又は2記載の有機EL素子。3. The organic EL device according to claim 1, wherein the insulating layer is formed of a polyimide film obtained by heat-treating a polyimide solution in which a water catching material is mixed and dispersed.
バリウムからなる請求項1〜3いずれかに記載の有機E
L素子。4. The organic E according to claim 1, wherein the water catching material is made of calcium oxide or barium oxide.
L element.
Priority Applications (1)
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JP10193315A JP2000030871A (en) | 1998-07-08 | 1998-07-08 | Organic el element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP10193315A JP2000030871A (en) | 1998-07-08 | 1998-07-08 | Organic el element |
Publications (1)
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JP2000030871A true JP2000030871A (en) | 2000-01-28 |
Family
ID=16305870
Family Applications (1)
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JP10193315A Pending JP2000030871A (en) | 1998-07-08 | 1998-07-08 | Organic el element |
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JP (1) | JP2000030871A (en) |
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