JP2000026121A - Production of thin film of complex lead oxide - Google Patents

Production of thin film of complex lead oxide

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Publication number
JP2000026121A
JP2000026121A JP10190124A JP19012498A JP2000026121A JP 2000026121 A JP2000026121 A JP 2000026121A JP 10190124 A JP10190124 A JP 10190124A JP 19012498 A JP19012498 A JP 19012498A JP 2000026121 A JP2000026121 A JP 2000026121A
Authority
JP
Japan
Prior art keywords
thin film
substrate
oxide
ions
aqueous solution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10190124A
Other languages
Japanese (ja)
Inventor
Takashi Kono
孝史 河野
Manabu Okamoto
学 岡本
Kazuo Hashimoto
和生 橋本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ube Corp
Original Assignee
Ube Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ube Industries Ltd filed Critical Ube Industries Ltd
Priority to JP10190124A priority Critical patent/JP2000026121A/en
Publication of JP2000026121A publication Critical patent/JP2000026121A/en
Pending legal-status Critical Current

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Abstract

PROBLEM TO BE SOLVED: To easily produce a thin film of APbO3 (where A is at least one of Ba or Sr) as an electrically conductive material on various substrates over a wide area without requiring high temp. treatment necessary for the conventional paste process or for the formation of a thin film by the thermal decomposition reaction of a mixture of organometallic compds. or requiring facilitates and steps of electrolysis, etc. SOLUTION: A substrate with a perovskite type oxide on the surface, a substrate with Ti or Ti oxide on the surface or a substrate with Pb or Pb oxide on the surface is heated in an aq. alkali soln. contg. A ions (A is at least one of Ba or Sr) and Pb ions to form the objective thin film of APbO3 on the substrate.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、不揮発性メモリー
やキャパシター等の電子素子、更には光変調素子などに
用いる電極または抵抗体などに使用されている導電性薄
膜であるAPbO 3(AはBaまたはSrのうち少なく
と一つ)薄膜の作製方法に関する。
The present invention relates to a nonvolatile memory.
For electronic devices such as capacitors and capacitors, as well as light modulation devices
Conductive thin film used for electrodes or resistors used
APbO as a membrane Three(A is less of Ba or Sr
And 1) a method for forming a thin film.

【0002】[0002]

【従来の技術】BaPbO3、SrPbO3などはペロブ
スカイト構造を有する金属酸化物導電体であり、中でも
BaPbO3は室温での電気抵抗値が0.3〜0.8mΩ
・cmで、電気抵抗値の温度係数は約0.1%/℃と小
さく、極低温から数百℃まで良好な導電性を示す。更
に、チタン酸バリウムやチタン酸鉛との反応性も低く、
従来の酸化物電極で問題となっていた、焼成時に強誘電
体素子と電極材との間で反応相が生じることによる強誘
電体特性の劣化、あるいは電極材自体の導電性の劣化と
いう問題がなく、薄膜用の下地電極材料としても使用で
きるという利点を有する。
2. Description of the Related Art BaPbO 3 , SrPbO 3 and the like are metal oxide conductors having a perovskite structure. Among them, BaPbO 3 has an electric resistance at room temperature of 0.3 to 0.8 mΩ.
In cm, the temperature coefficient of electric resistance is as small as about 0.1% / ° C., showing good conductivity from extremely low temperatures to several hundred degrees Celsius. Furthermore, the reactivity with barium titanate and lead titanate is low,
The problem with conventional oxide electrodes is that the ferroelectric properties deteriorate due to the formation of a reaction phase between the ferroelectric element and the electrode material during firing, or the conductivity of the electrode material itself deteriorates. And has the advantage that it can be used as a base electrode material for a thin film.

【0003】従来、各種の電子部品に用いられる薄膜電
極および発熱抵抗体は、電子ビーム蒸着法やスパッタリ
ング法等の気相法によって形成されてきた。一方、電極
および発熱抵抗体などの導電性厚膜の形成には、有機金
属法(MOD)またはペースト法が使用されてきた。し
かし、前者は設備コスト、薄膜の組成制御、大面積化
等、後者は膜質および薄膜化等の問題があった。このう
ち、設備コスト、薄膜の組成制御、大面積化等に優れた
後者のペースト法では、Pd,Ag,Pd−Ag,Pt
等の貴金属粉末を導電材として、これにバインダー、溶
媒、ガラス・フリット等を混合したものを基板に塗布
し、焼き付けることによって、Pd,Ag,Pd−A
g,Pt等の貴金属厚膜が作製されている。しかし、こ
れらの貴金属膜は酸化に強い反面、コストが著しく高
い。このため、特開昭61−225711号公報におい
ては、BaPbO3等の導電性酸化物をペースト法によ
って形成することが述べられているが、薄膜を必要とす
る電子素子にペースト法は不適である。
Conventionally, thin-film electrodes and heating resistors used for various electronic parts have been formed by a vapor phase method such as an electron beam evaporation method or a sputtering method. On the other hand, an organic metal method (MOD) or a paste method has been used for forming a conductive thick film such as an electrode and a heating resistor. However, the former has problems such as equipment cost, composition control of the thin film, enlargement of the area, and the latter has problems such as film quality and thinning. Among these, Pd, Ag, Pd-Ag, and Pt are preferred in the latter paste method, which is excellent in equipment cost, thin film composition control, large area, and the like.
Pd, Ag, Pd-A by applying a mixture of a noble metal powder such as a binder, a solvent, and a glass frit to a substrate, and baking the mixture.
Noble metal thick films such as g and Pt are produced. However, while these noble metal films are resistant to oxidation, their cost is extremely high. For this reason, Japanese Patent Application Laid-Open No. 61-225711 describes that a conductive oxide such as BaPbO 3 is formed by a paste method, but the paste method is not suitable for an electronic element requiring a thin film. .

【0004】このため、BaPbO3の薄膜を形成する
方法が検討されており、特開平7−130232号公報
には、有機金属化合物の混合物を基板に塗布し、熱分解
し、薄膜を形成する方法が記載されている。しかしなが
ら、この方法では、450〜600℃程度のアニーリン
グを必要とするため、薄膜を作製する基板の種類が限ら
れてしまう。
For this reason, a method of forming a thin film of BaPbO 3 has been studied. Japanese Patent Application Laid-Open No. Hei 7-130232 discloses a method of applying a mixture of an organometallic compound to a substrate, thermally decomposing the mixture, and forming a thin film. Is described. However, since this method requires annealing at about 450 to 600 ° C., the type of a substrate on which a thin film is formed is limited.

【0005】また、BaPbO3などの被膜は、鉛蓄電
池用の集電体としても、使用されており、特開平8−1
7436号公報には、PbまたはPb合金の上にBaP
bO 3の薄膜を形成する方法が記載されている。しかし
ながら、この方法は、陽極酸化を必要とするため、電極
や電源などの設備や電気分解の工程を必要とする。
[0005] BaPbOThreeSuch as lead storage
It is also used as a current collector for a pond.
No. 7436 discloses BaP on Pb or Pb alloy.
bO ThreeA method for forming a thin film is described. However
However, this method requires anodic oxidation,
And equipment such as power supply and electrolysis process are required.

【0006】[0006]

【発明が解決しようとする課題】本発明は、上記の問題
を鑑みてなされたものであり、従来のペースト法や有機
金属化合物の混合物を熱分解反応させる薄膜形成のよう
な高温で処理する必要が無く、使用できる基板の種類が
広く、かつ、電気分解などの設備や工程を必要としな
い、容易で安価なAPbO3薄膜(ここでAはBaまた
はSrのうち少なくと一つ)の製造方法を提供すること
にある。
SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems, and requires a high-temperature treatment such as a conventional paste method or the formation of a thin film in which a mixture of organometallic compounds is thermally decomposed. Method for producing an easy and inexpensive APbO 3 thin film (where A is at least one of Ba and Sr), which does not require a wide variety of usable substrates and does not require equipment or processes such as electrolysis. Is to provide.

【0007】[0007]

【課題を解決するための手段】本発明者らは、導電性薄
膜について研究を重ねてきたところ、原料イオンを含む
アルカリ水溶液中で反応させることにより、基板上に導
電性薄膜を形成することができることを見出し、本発明
に至った。
Means for Solving the Problems The inventors of the present invention have studied the conductive thin film, and found that the conductive thin film can be formed on the substrate by reacting in an alkaline aqueous solution containing raw material ions. The present inventors have found that they can do so, and have reached the present invention.

【0008】即ち、本発明は、表面にペロブスカイト型
酸化物を有する基板を、Aイオン(AはBaまたはSr
のうち少なくとも一つ)とPbイオンを含むアルカリ水
溶液中で加熱処理し、ペロブスカイト型酸化物上にAP
bO3薄膜を形成することを特徴とする複合鉛酸化物薄
膜の製造方法に関する。
That is, according to the present invention, a substrate having a perovskite-type oxide on its surface is treated with A ions (A is Ba or Sr).
Heat treatment in an alkaline aqueous solution containing at least one of Pb ions and Pb ions to form an AP on a perovskite oxide.
The present invention relates to a method for producing a composite lead oxide thin film, which comprises forming a bO 3 thin film.

【0009】また、本発明は、表面にTi又Ti酸化物
を有する基板を、Aイオン(AはBaまたはSrのうち
少なくとも一つ)とPbイオンを含むアルカリ水溶液中
で加熱処理し、Ti又はTi酸化物上にAPbO3薄膜
を形成することを特徴とする複合鉛酸化物薄膜の製造方
法に関する。
Further, the present invention provides a heat treatment of a substrate having Ti or Ti oxide on a surface thereof in an alkaline aqueous solution containing A ion (A is at least one of Ba and Sr) and Pb ion. The present invention relates to a method for producing a composite lead oxide thin film, comprising forming an APbO 3 thin film on a Ti oxide.

【0010】さらに、本発明は、表面にPb又はPb酸
化物を有する基板を、Aイオン(AはBaまたはSrの
うち少なくとも一つ)とPbイオンを含むアルカリ水溶
液中で加熱処理し、PbまたはPb酸化物上にAPbO
3薄膜を形成することを特徴とする複合鉛酸化物薄膜の
製造方法に関する。
Further, the present invention provides a substrate having a Pb or Pb oxide on a surface thereof in an alkaline aqueous solution containing A ions (A is at least one of Ba and Sr) and Pb ions, and heat-treating the Pb or Pb oxide. APbO on Pb oxide
The present invention relates to a method for producing a composite lead oxide thin film, characterized by forming three thin films.

【0011】[0011]

【発明の実施の形態】本発明の、表面にペロブスカイト
型酸化物を有する基板を、Aイオン(AはBaまたはS
rのうち少なくとも一つ)とPbイオンを含むアルカリ
水溶液中で加熱処理し、ペロブスカイト型酸化物層上に
APbO3薄膜を形成することを特徴とする複合鉛酸化
物薄膜の製造方法について、詳細に説明する。
BEST MODE FOR CARRYING OUT THE INVENTION A substrate having a perovskite-type oxide on the surface of the present invention is treated with A ion (A is Ba or S).
r) and a heat treatment in an alkaline aqueous solution containing Pb ions to form an APbO 3 thin film on the perovskite-type oxide layer. explain.

【0012】表面にペロブスカイト型酸化物を有する基
板の基板としては、ペロブスカイト酸化物を形成できる
ものであれば、特に限定されず、無機物、金属、有機物
など何でも良い。また、基板はペロブスカイト型酸化物
そのものでもよい。また、表面のペロブスカイト型酸化
物の種類としては、特に限定されないが、例えば、Ba
TiO3,PbTiO3,PZT(チタン酸ジルコン酸
鉛),PLZT,Pb(Ni1/3Nb2/3)O3,Pb
(Ni1/3Nb2/3)O3,Pb(Mg1/3Nb2/3)O 3
Pb(Zn1/3Nb2/3)O3,Ba(Zr,Ti)O3
構成元素の各サイトをBa,Ca,Sr,La,Bi,
やZn,Ni,Mg,Co,W,Nb,Sb,Ta,F
e,W等で置換した置換体やそれらの複合体が挙げられ
る。
A group having a perovskite oxide on its surface
Perovskite oxide can be formed as a plate substrate
It is not particularly limited as long as it is an inorganic substance, a metal, an organic substance
Anything is fine. The substrate is a perovskite oxide
It may be itself. In addition, perovskite-type oxidation of the surface
Although the kind of the object is not particularly limited, for example, Ba
TiOThree, PbTiOThree, PZT (zirconate titanate)
Lead), PLZT, Pb (Ni1/3Nb2/3) OThree, Pb
(Ni1/3Nb2/3) OThree, Pb (Mg1/3Nb2/3) O Three,
Pb (Zn1/3Nb2/3) OThree, Ba (Zr, Ti) OThreeAnd
Each site of the constituent elements is represented by Ba, Ca, Sr, La, Bi,
And Zn, Ni, Mg, Co, W, Nb, Sb, Ta, F
e, substituted products substituted with W, etc., and complexes thereof.
You.

【0013】基板上にこれらのペロブスカイト型酸化物
を形成する方法については、ここでは限定しないが、例
えば、スパッタリング法、ゾルゲル法、水熱法などがあ
る。焼結法で得たペロブスカイト型酸化物セラミックス
基板もそのまま、導電性薄膜を形成する基板としても使
用できる。水熱法でペロブスカイト型酸化物を形成すれ
ば、そのまま、引き続き、本発明のAPbO3膜(Aは
BaまたはSrのうち少なくとも一つ)の形成を水溶液
中で行なうことができる。これらのペロブスカイト型酸
化物薄膜は、反応系から取出す必要はなく中間体として
わずかに形成されていてもよい。
The method for forming these perovskite oxides on a substrate is not limited here, but includes, for example, a sputtering method, a sol-gel method, and a hydrothermal method. The perovskite-type oxide ceramics substrate obtained by the sintering method can be used as it is as a substrate for forming a conductive thin film. If a perovskite oxide is formed by a hydrothermal method, the formation of the APbO 3 film (A is at least one of Ba and Sr) of the present invention can be performed in an aqueous solution. These perovskite oxide thin films need not be taken out of the reaction system and may be slightly formed as intermediates.

【0014】上記の表面にペロブスカイト型酸化物を有
する基板を、目的とするAPbO3膜のAに相当するB
a,Srイオンの内少なくとも1つとPbイオンを含む
アルカリ水溶液に入れ、加熱する。これらの溶液に入れ
るBa,Sr化合物としては、金属、無機塩、有機金属
化合物など、溶液中でBa,Srのイオンになるもので
あればよい。Pb化合物としては、水酸化鉛など、アル
カリ水溶液中でPbイオンが存在するものであればよ
い。Ba,Sr,Pbの溶液中の濃度は、それぞれ0.
025mol/l以上であればよく、飽和濃度でもよ
い。濃度が低い場合は反応が遅くなる。
The substrate having the perovskite oxide on its surface is treated with B corresponding to A of the target APbO 3 film.
a. Put in an alkaline aqueous solution containing at least one of Sr ions and Pb ion and heat. The Ba and Sr compounds to be added to these solutions may be metals, inorganic salts, organometallic compounds, etc., as long as they become Ba and Sr ions in the solution. The Pb compound may be any compound in which Pb ions exist in an aqueous alkaline solution, such as lead hydroxide. The concentrations of Ba, Sr, and Pb in the solution were each 0.1.
The concentration may be 025 mol / l or more, and may be a saturated concentration. If the concentration is low, the reaction will be slow.

【0015】アルカリ水溶液とするため、上記Aイオン
の水酸化物あるいは、別途NaOH,KOHなどを使用
することもできる。アルカリが強いほど結晶化し易く、
PH12以上が好ましい。
In order to prepare an aqueous alkaline solution, a hydroxide of the above-mentioned A ion or NaOH, KOH or the like may be used separately. The stronger the alkali, the easier it will crystallize,
PH12 or more is preferable.

【0016】反応温度は、80〜400℃、好ましくは
100〜200℃であり、低すぎると反応が遅くなり、
高すぎると高圧になり、実用的でない。反応温度によっ
ては、オートクレーブが使用される。
The reaction temperature is from 80 to 400 ° C., preferably from 100 to 200 ° C. If it is too low, the reaction slows down,
If it is too high, it will be high pressure and not practical. An autoclave is used depending on the reaction temperature.

【0017】また、表面にTi又Ti酸化物を有する基
板、あるいは表面にPb又はPb酸化物を有する基板
を、Aイオン(AはBaまたはSrのうち少なくとも一
つ)とPbイオンを含むアルカリ水溶液中で加熱処理
し、Ti又はTi酸化物、あるいはPb又はPb酸化物
上にAPbO3薄膜を形成する方法について、説明す
る。
Further, a substrate having Ti or Ti oxide on its surface or a substrate having Pb or Pb oxide on its surface is prepared by using an alkaline aqueous solution containing A ions (A is at least one of Ba and Sr) and Pb ions. A method for forming an APbO 3 thin film on Ti or a Ti oxide or Pb or a Pb oxide by heat treatment in an atmosphere will be described.

【0018】この場合の基板としては、特に制限はな
く、反応液中で安定であれば、上記のTi又はTi酸化
物、あるいはPb又はPb酸化物が基板の表面に形成さ
れるものであればよい。また、基板自体が、Ti又はT
i酸化物、あるいはPb又はPb酸化物であってもよ
い。圧電体素子として使用する場合、耐アルカリ性、耐
熱性、ヤング率などの点から、Ti、Niまたはそれら
の合金が基板として好ましい。
The substrate in this case is not particularly limited, as long as it is stable in the reaction solution, as long as the above-mentioned Ti or Ti oxide, or Pb or Pb oxide is formed on the surface of the substrate. Good. The substrate itself is made of Ti or T
It may be an i-oxide or Pb or a Pb oxide. When used as a piezoelectric element, Ti, Ni, or an alloy thereof is preferable as the substrate in terms of alkali resistance, heat resistance, Young's modulus, and the like.

【0019】Ti又はTi酸化物を表面に有する基板を
上記と同様な反応条件でアルカリ水溶液中で処理する
と、最初にその表面にATiO3(AはBaまたはSr
のうち少なくとも一つ)又はPbTiO3あるいはそれ
らの混合系のペロブスカイト型酸化物が形成され、これ
を基礎としてAPbO3薄膜(AはBaまたはSrのう
ち少なくとも一つ)が形成される。
When a substrate having Ti or Ti oxide on its surface is treated in an aqueous alkaline solution under the same reaction conditions as described above, first, ATiO 3 (A is Ba or Sr
Is formed, and a perovskite oxide of PbTiO 3 or a mixture thereof is formed, and an APbO 3 thin film (A is at least one of Ba and Sr) is formed on the basis thereof.

【0020】PbまたはPb酸化物を表面に有する基板
を上記と同様な反応条件でアルカリ水溶液中で処理する
と、最初にその表面にAPbO3(AはBaまたはSr
のうち少なくとも一つ)が形成され、その後、各イオン
が供給され、APbO3膜(AはBaまたはSrのうち
少なくとも一つ)が成長していく。
When a substrate having Pb or Pb oxide on its surface is treated in an alkaline aqueous solution under the same reaction conditions as described above, first, APbO 3 (A is Ba or Sr
Is formed, and thereafter, each ion is supplied, and the APbO 3 film (A is at least one of Ba and Sr) grows.

【0021】[0021]

【実施例】以下、実施例を示してこの発明を具体的に説
明する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be specifically described below with reference to embodiments.

【0022】実施例1 オートクレーブの内容器にTi基板を設置し、水酸化バ
リウム0.2mol/l水溶液中、80℃で4時間反応
させた。その結果、Ti基板水溶液上に0.1μmの厚
みのBaTiO3薄膜を得た。得られたBaTiO3薄膜
のX線回折バターンを図1に示す。続いてこのBaTi
3薄膜を形成したTi基板を水酸化バリウム0.07
8mol/l、水酸化鉛0.078mol/lおよび水
酸化カリウム2.0mol/lの混合水溶液中、140
℃で20時間反応させた。その結果、BaTiO3薄膜
上にBaPbO3薄膜を得た。BaPbO3薄膜のSEM
写真を図2に、BaPbO3薄膜のX線回折パターンを
図3に示す。
Example 1 A Ti substrate was placed in an inner container of an autoclave and reacted at 80 ° C. for 4 hours in a 0.2 mol / l aqueous solution of barium hydroxide. As a result, a 0.1 μm thick BaTiO 3 thin film was obtained on the Ti substrate aqueous solution. FIG. 1 shows an X-ray diffraction pattern of the obtained BaTiO 3 thin film. Then this BaTi
O 3 Ti substrate barium hydroxide 0.07 which thin film was formed
In a mixed aqueous solution of 8 mol / l, lead hydroxide 0.078 mol / l and potassium hydroxide 2.0 mol / l, 140
The reaction was performed at 20 ° C. for 20 hours. As a result, a BaPbO 3 thin film was obtained on the BaTiO 3 thin film. SEM of BaPbO 3 thin film
A photograph is shown in FIG. 2 and an X-ray diffraction pattern of the BaPbO 3 thin film is shown in FIG.

【0023】実施例2 オートクレーブの内容器にTi基板を設置し、水酸化鉛
0.1mol/l、水酸化ジルコニウム0.053mo
l/l、水酸化チタン0.001mol/lおよび水酸
化カリウム1.5mol/lの混合水溶液中、160℃
で24時間反応させた。その結果、Ti基板表面上に
5.0μmの厚みのPb(Zr,Ti)O 3薄膜を得
た。続いてこのPb(Zr,Ti)O3薄膜を形成した
Ti基板を水酸化ストロンチウム0.056mol/
l,水酸化鉛0.056mol/lおよび水酸化カリウ
ム1.5mol/lの混合水溶液中、150℃で15時
間反応させた。その結果、Pb(Zr,Ti)O3薄膜
上にSrPbO3薄膜を得た。得られたSrPbO3薄膜
のX線回折パターンを図4に示す。
Example 2 A Ti substrate was placed in an inner container of an autoclave, and lead hydroxide was
0.1mol / l, zirconium hydroxide 0.053mo
1 / l, titanium hydroxide 0.001mol / l and hydroxyl
160 ° C. in a mixed aqueous solution of 1.5 mol / l potassium iodide
For 24 hours. As a result, on the Ti substrate surface
5.0 μm thick Pb (Zr, Ti) O ThreeGet a thin film
Was. Then, the Pb (Zr, Ti) OThreeFormed a thin film
Strontium hydroxide 0.056mol / Ti substrate
l, lead hydroxide 0.056mol / l and potassium hydroxide
In a mixed aqueous solution of 1.5 mol / l at 150 ° C for 15 hours
Reaction. As a result, Pb (Zr, Ti) OThreeThin film
SrPbO on topThreeA thin film was obtained. Obtained SrPbOThreeThin film
The X-ray diffraction pattern of the sample is shown in FIG.

【0024】実施例3 オートクレーブの内容器にTi基板を設置し、水酸化バ
リウム0.078mol/l、水酸化鉛0.078mo
l/lおよび水酸化カリウム2.0mol/lの混合水
溶液中、140℃で20時間反応させた。その結果、T
i基板表面上に2.0μmの厚みのBaPbO3薄膜を
得た。この薄膜をX線回折分析したところ、図3と同様
な回折パターンを得た。これによりTi基板上にBaP
bO3の結晶性の薄膜が生成していることが確認され
た。得られたBaPbO3薄膜の抵抗を四端子法によっ
て測定したところ、8×10-3Ω・cmの低い値を示し
た。
Example 3 A Ti substrate was placed in an inner container of an autoclave, and barium hydroxide (0.078 mol / l) and lead hydroxide (0.078 mol) were used.
The reaction was carried out at 140 ° C. for 20 hours in a mixed aqueous solution of l / l and 2.0 mol / l of potassium hydroxide. As a result, T
A BaPbO 3 thin film having a thickness of 2.0 μm was obtained on the surface of the i-substrate. When this thin film was subjected to X-ray diffraction analysis, a diffraction pattern similar to that of FIG. 3 was obtained. As a result, BaP is deposited on the Ti substrate.
It was confirmed that a crystalline thin film of bO 3 was formed. When the resistance of the obtained BaPbO 3 thin film was measured by a four-terminal method, it showed a low value of 8 × 10 −3 Ω · cm.

【0025】実施例4 オートクレーブの内容器に鉛基板を設置し、水酸化バリ
ウム0.039mol/l、水酸化鉛0.039mol
/lおよび水酸化カリウム1.5mol/lの混合水溶
液中、160℃で12時間反応させることにより、厚さ
1.0μmのBaPbO3薄膜を得た。得られたBaP
bO3薄膜のX線回折パターンを図5に示す。得られた
BaPbO3薄膜の抵抗を四端子法によって測定したと
ころ、4×10-3Ω・cmの低い値を示した。
Example 4 A lead substrate was placed in an inner container of an autoclave, and barium hydroxide 0.039 mol / l and lead hydroxide 0.039 mol were used.
The reaction was carried out at 160 ° C. for 12 hours in a mixed aqueous solution of 1.5 mol / l of potassium hydroxide and 1.5 mol / l of potassium hydroxide to obtain a 1.0 μm thick BaPbO 3 thin film. BaP obtained
FIG. 5 shows the X-ray diffraction pattern of the bO 3 thin film. When the resistance of the obtained BaPbO 3 thin film was measured by a four-terminal method, it showed a low value of 4 × 10 −3 Ω · cm.

【0026】実施例5 Pb(OC372をゼオライトで脱水した2−メトキ
シエタノールに溶解し、0.6mol/l溶液を得た。
この溶液をTi基板上へ2000rpmでスピンコーテ
ィングを行なった。以上の操作はすべて窒素雰囲気中で
行なった。スピンコーティングされた基板は塗布層を2
50℃で熱分解し、酸化鉛薄膜を形成した。
Example 5 Pb (OC 3 H 7 ) 2 was dissolved in zeolite-dehydrated 2-methoxyethanol to obtain a 0.6 mol / l solution.
This solution was spin-coated on a Ti substrate at 2000 rpm. All of the above operations were performed in a nitrogen atmosphere. Spin-coated substrates have two coating layers
It was thermally decomposed at 50 ° C. to form a lead oxide thin film.

【0027】次に、オートクレーブの内容器に上記基板
を設置し、実施例4と同じ組成のアルカリ中、実施例4
と同じ条件で反応させ、厚さ1.0μmのBaPbO3
薄膜を得た。得られたBaPbO3薄膜は、図5と同じ
X線回折パターンを示した。
Next, the substrate was placed in an inner container of an autoclave, and the solution was placed in an alkali having the same composition as in Example 4.
The reaction was carried out under the same conditions as described above, and a 1.0 μm thick BaPbO 3
A thin film was obtained. The obtained BaPbO 3 thin film showed the same X-ray diffraction pattern as in FIG.

【0028】[0028]

【発明の効果】ペロブスカイト型酸化物を表面に有する
基板を、Aイオン(AはBaまたはSrのうち少なくと
一つ)とPbイオンを含むアルカリ水溶液中で加熱処理
すると、その表面に、電気分解などの設備や工程を必要
とせず、安価で容易に導電性のAPbO3薄膜(ここで
AはBa,Srのうち少なくと一つ)を製造することが
できる。
According to the present invention, when a substrate having a perovskite oxide on its surface is subjected to heat treatment in an alkaline aqueous solution containing A ions (A is at least one of Ba and Sr) and Pb ions, the surface is electrolyzed. This eliminates the need for facilities and steps such as the above, and makes it possible to manufacture a conductive APbO 3 thin film (here, A is at least one of Ba and Sr) at low cost and easily.

【0029】さらに、Ti又はTi酸化物またはPb又
はPb酸化物を表面に有する基板を、上記と同様な条件
で反応させても、容易に導電性のAPbO3薄膜を形成
することができる。
Further, even when a substrate having Ti or Ti oxide or Pb or Pb oxide on the surface is reacted under the same conditions as described above, a conductive APbO 3 thin film can be easily formed.

【図面の簡単な説明】[Brief description of the drawings]

【図1】実施例1で得られたBaTiO3薄膜のX線回
折図である。
FIG. 1 is an X-ray diffraction diagram of a BaTiO 3 thin film obtained in Example 1.

【図2】実施例1で得られたBaPbO3薄膜の表面状
態を表わす図面に代わるSEM写真である。
FIG. 2 is a SEM photograph instead of a drawing showing the surface state of the BaPbO 3 thin film obtained in Example 1.

【図3】実施例1で得られたBaPbO3薄膜のX線回
折図である。
FIG. 3 is an X-ray diffraction diagram of the BaPbO 3 thin film obtained in Example 1.

【図4】実施例2で得られたSrPbO3薄膜のX線回
折図である。
4 is an X-ray diffraction diagram of the SrPbO 3 thin film obtained in Example 2. FIG.

【図5】実施例4で得られたBaPbO3薄膜のX線回
折図である。
5 is an X-ray diffraction diagram of the BaPbO 3 thin film obtained in Example 4. FIG.

───────────────────────────────────────────────────── フロントページの続き Fターム(参考) 5G303 AA10 AB20 BA03 CA01 CB03 CB25 CB32 DA01 5G323 BA05 BB01  ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 5G303 AA10 AB20 BA03 CA01 CB03 CB25 CB32 DA01 5G323 BA05 BB01

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】表面にペロブスカイト型酸化物を有する基
板を、Aイオン(AはBaまたはSrのうち少なくとも
一つ)とPbイオンを含むアルカリ水溶液中で加熱処理
し、ペロブスカイト型酸化物層上にAPbO3薄膜を形
成することを特徴とする複合鉛酸化物薄膜の製造方法。
A substrate having a perovskite oxide on its surface is subjected to a heat treatment in an alkaline aqueous solution containing A ions (A is at least one of Ba or Sr) and Pb ions to form a substrate on the perovskite oxide layer. A method for producing a composite lead oxide thin film, comprising forming an APbO 3 thin film.
【請求項2】表面にTi又はTi酸化物を有する基板
を、Aイオン(AはBaまたはSrのうち少なくとも一
つ)とPbイオンを含むアルカリ水溶液中で加熱処理
し、Ti又はTi酸化物上にAPbO3薄膜を形成する
ことを特徴とする複合鉛酸化物薄膜の製造方法。
2. A substrate having Ti or Ti oxide on its surface is subjected to heat treatment in an alkaline aqueous solution containing A ions (A is at least one of Ba or Sr) and Pb ions, and the substrate is treated with Ti or Ti oxide. A method for producing a composite lead oxide thin film, comprising: forming an APbO 3 thin film on the substrate.
【請求項3】表面にPb又はPb酸化物を有する基板
を、Aイオン(AはBaまたはSrのうち少なくとも一
つ)とPbイオンを含むアルカリ水溶液中で加熱処理
し、PbまたはPb酸化物上にAPbO3薄膜を形成す
ることを特徴とする複合鉛酸化物薄膜の製造方法。
3. A substrate having Pb or Pb oxide on its surface is subjected to heat treatment in an alkaline aqueous solution containing A ions (A is at least one of Ba or Sr) and Pb ions. A method for producing a composite lead oxide thin film, comprising: forming an APbO 3 thin film on the substrate.
JP10190124A 1998-07-06 1998-07-06 Production of thin film of complex lead oxide Pending JP2000026121A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10190124A JP2000026121A (en) 1998-07-06 1998-07-06 Production of thin film of complex lead oxide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10190124A JP2000026121A (en) 1998-07-06 1998-07-06 Production of thin film of complex lead oxide

Publications (1)

Publication Number Publication Date
JP2000026121A true JP2000026121A (en) 2000-01-25

Family

ID=16252803

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10190124A Pending JP2000026121A (en) 1998-07-06 1998-07-06 Production of thin film of complex lead oxide

Country Status (1)

Country Link
JP (1) JP2000026121A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006248849A (en) * 2005-03-11 2006-09-21 Fujitsu Ltd Precursor solution, method for manufacturing oxide thin film and ferroelectric optical element

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006248849A (en) * 2005-03-11 2006-09-21 Fujitsu Ltd Precursor solution, method for manufacturing oxide thin film and ferroelectric optical element
JP4704077B2 (en) * 2005-03-11 2011-06-15 富士通株式会社 Precursor solution, method for producing oxide thin film, and ferroelectric optical element

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