JP2000017425A - Vessel for organic compound and fabrication of organic thin film - Google Patents

Vessel for organic compound and fabrication of organic thin film

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Publication number
JP2000017425A
JP2000017425A JP19195098A JP19195098A JP2000017425A JP 2000017425 A JP2000017425 A JP 2000017425A JP 19195098 A JP19195098 A JP 19195098A JP 19195098 A JP19195098 A JP 19195098A JP 2000017425 A JP2000017425 A JP 2000017425A
Authority
JP
Japan
Prior art keywords
thin film
organic thin
container
vapor
vacuum chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP19195098A
Other languages
Japanese (ja)
Other versions
JP3839587B2 (en
Inventor
Toshio Negishi
敏夫 根岸
Tatsuhiko Koshida
達彦 越田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Priority to JP19195098A priority Critical patent/JP3839587B2/en
Publication of JP2000017425A publication Critical patent/JP2000017425A/en
Application granted granted Critical
Publication of JP3839587B2 publication Critical patent/JP3839587B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Abstract

PROBLEM TO BE SOLVED: To provide an art capable of forming a uniform organic thin film on a substrate having a large diameter. SOLUTION: A vessel 10 for containing a material for an organic thin film is provided with receive holes 221-224 which are inclined from the center of the vessel 10 toward outer side and has a bottom. A vapor generated from the material for the organic thin film is allowed to have directivity toward the outside of the vessel 10 during flowing through each receive hole and uniformly released into a vacuum chamber. A uniform organic thin film can be formed on the substrate having larger diameter by adjusting the pressure to a prescribed pressure of 1.33×10-4-6.65×10-2 Pa by introducing gas into the vacuum chamber because the vapor released into the vacuum chamber comes into collision with the molecules of the gas and is scattered.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、真空蒸着技術にか
かり、特に、有機化合物から成る有機薄膜材料を収容す
る容器と、有機薄膜材料から放出された蒸気によって有
機薄膜を形成する有機薄膜製造方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vacuum deposition technique, and more particularly to a container for containing an organic thin film material made of an organic compound, and a method for manufacturing an organic thin film by forming vapor from the organic thin film material. About.

【0002】[0002]

【従来の技術】有機化合物と無機化合物とを比べた場
合、有機化合物の方が反応系や特性が多様であり、ま
た、低エネルギーで表面処理できることから、近年、機
能性有機薄膜が着目されている。
2. Description of the Related Art When organic compounds are compared with inorganic compounds, organic compounds have more diverse reaction systems and properties and can be surface-treated with low energy. I have.

【0003】機能性有機薄膜を利用するものには、有機
EL素子、圧電センサ、焦電センサ、電気絶縁膜等、種
々のものがあるが、これらのうち、有機EL素子はディ
スプレイパネルとして利用できることから非常に注目さ
れている。
There are various types using a functional organic thin film, such as an organic EL element, a piezoelectric sensor, a pyroelectric sensor, and an electric insulating film. Of these, the organic EL element can be used as a display panel. Has received a lot of attention.

【0004】図6の符号aに示したものは有機EL素子
の概略構成図であり、ガラス基板b上に、透明導電膜か
ら成るアノード電極膜c、P型の有機薄膜d、N型の有
機薄膜e、カソード電極膜fがこの順で形成されてい
る。この有機EL素子aのアノード電極膜cとカソード
電極膜fとの間に電圧を印加すると、有機薄膜d、eの
界面が発光し、ガラス基板bを透過して外部にEL光g
を放射させることができる。
[0006] Reference numeral a in FIG. 6 is a schematic configuration diagram of an organic EL device. An anode electrode film c made of a transparent conductive film, a P-type organic thin film d, and an N-type organic EL device are formed on a glass substrate b. A thin film e and a cathode electrode film f are formed in this order. When a voltage is applied between the anode electrode film c and the cathode electrode film f of the organic EL element a, the interface between the organic thin films d and e emits light, passes through the glass substrate b, and emits EL light g to the outside.
Can be emitted.

【0005】有機薄膜d、eを形成するためには、一般
的に真空蒸着法が用いられており、有機蒸着源を真空槽
内に配置し、有機薄膜材料の蒸気を放出させ、成膜対象
の基板表面に付着させると有機薄膜を形成できるように
なっている。
[0005] In order to form the organic thin films d and e, a vacuum evaporation method is generally used. An organic evaporation source is arranged in a vacuum chamber, vapor of the organic thin film material is discharged, and a film forming object is formed. An organic thin film can be formed by attaching it to the surface of a substrate.

【0006】ところが、金属材料の蒸発温度は600℃
〜2000℃程度と高温であるのに対し、有機薄膜材料
である有機化合物は蒸気圧が高く、蒸発温度は0℃(場
合によっては零下)〜400℃の間にあるのが普通であ
る。また、有機化合物は分解し易く、その分解温度が蒸
発温度に近接し、蒸発温度を超えるとすぐに分解してし
まうものも多い。そのため、有機薄膜材料の蒸気を放出
させる有機蒸着源は、金属蒸着源と異なり、比較的低温
で精密に温度制御できる機能が必要となる。
[0006] However, the evaporation temperature of the metal material is 600 ° C.
While the temperature is as high as about 2000 ° C., the organic compound which is an organic thin film material has a high vapor pressure, and the evaporation temperature is usually between 0 ° C. (in some cases, below zero) and 400 ° C. Further, organic compounds are easily decomposed, and many of them are decomposed immediately when the decomposition temperature approaches the evaporation temperature and exceeds the evaporation temperature. Therefore, unlike a metal evaporation source, an organic evaporation source that emits a vapor of an organic thin film material needs a function capable of precisely controlling the temperature at a relatively low temperature.

【0007】また、有機材料は粉体であるものが多い
が、真空中では粉体を構成する粒子間が真空断熱される
ため、熱伝導が悪く、赤外線を用いて加熱すると局所的
に過熱状態になり、突沸を生じやすいという問題があ
る。従って、金属薄膜等の無機系薄膜の形成に適した真
空蒸着装置を、有機薄膜の形成に転用するのは困難であ
る。
Organic materials are often in the form of powder, but in vacuum, heat conduction is poor due to vacuum insulation between particles constituting the powder. And there is a problem that bumping is likely to occur. Therefore, it is difficult to convert a vacuum deposition apparatus suitable for forming an inorganic thin film such as a metal thin film to the formation of an organic thin film.

【0008】そこで近年では、有機薄膜を形成するため
に、図7の符号150に示すような専用の真空蒸着装置
が用いられている。この真空蒸着装置150を説明する
と、該真空蒸着装置150は、真空槽151を有してお
り、該真空槽151天井側には、基板ホルダ130が配
置され、底壁には、有機蒸着源140が設けられてい
る。
Therefore, in recent years, a dedicated vacuum deposition apparatus as shown by reference numeral 150 in FIG. 7 has been used to form an organic thin film. The vacuum deposition apparatus 150 will be described. The vacuum deposition apparatus 150 has a vacuum chamber 151, a substrate holder 130 is disposed on the ceiling side of the vacuum chamber 151, and an organic deposition source 140 is disposed on a bottom wall. Is provided.

【0009】一般に、有機薄膜材料は分解しやすく、赤
外線や電子線等で加熱できないため、有機蒸着源140
内には、グラファイト等のセラミックス材料を穿設加工
した容器110が配置されており、容器110周囲に設
けたヒータ141を発熱させ、容器110内に収容させ
た有機薄膜材料を、その壁面からの熱伝導によって加熱
するように構成されている。
Generally, organic thin-film materials are easily decomposed and cannot be heated by infrared rays, electron beams, or the like.
Inside, a container 110 in which a ceramic material such as graphite is perforated is disposed, and a heater 141 provided around the container 110 generates heat, and the organic thin film material accommodated in the container 110 is removed from the wall surface. It is configured to heat by heat conduction.

【0010】容器110を説明すると、図8(a)の平面
図、及びそのB−B線截断面図である同図(b)を参照
し、該容器110の上端部分には開放口212が設けら
れており、内部は開放口212から所定深さまで円筒形
形状の壁面211によって囲まれ、筒状の通路221が
形成されている。
Referring to the plan view of FIG. 8 (a) and the sectional view taken along the line BB of FIG. 8 (b), an opening 212 is formed at the upper end of the container 110. The inside is surrounded by a cylindrical wall surface 211 from the opening 212 to a predetermined depth, and a cylindrical passage 221 is formed.

【0011】通路221の底部には、深穴形状の4個の
収容孔2221〜2224が形成されており、開放口21
2から粉体状の有機薄膜材料を落とし込んだときに、各
収容孔2212〜2224内に有機薄膜材料が収容される
ように構成されている。
At the bottom of the passage 221, four deep-hole-shaped receiving holes 222 1 to 222 4 are formed.
From 2 when dropped into the powdery organic film material and is configured such organic thin film material is housed in the housing hole 221 2-222 4.

【0012】このような容器110では、ヒータ141
を発熱させたときに、各収容孔2211〜2214内に収
容された有機薄膜材料が、壁面211からの熱伝導の
他、各収容孔2211〜2214の中央部213からの熱
伝導によっても加熱されるため、有機薄膜材料全体が均
一に昇温し、各収容孔2211〜2214内から、真空槽
151内に向けて、有機薄膜材料の蒸気が均等に放出さ
れるようになっている。
In such a container 110, the heater 141
When exothermed, organic thin film material contained in each containing hole 221 1-221 4 is other heat conduction from the wall 211, the heat conduction from the central portion 213 of the housing hole 221 1-221 4 since also heated by the entire organic thin film material is uniformly heated, from each containing hole 221 1-221 within 4, toward the vacuum chamber 151, as the vapor of the organic thin film material is evenly released Has become.

【0013】この蒸着装置150を使用する場合、予め
真空槽151内を真空雰囲気にしておき、基板ホルダ1
30に基板131を装着し、基板ホルダ130内のヒー
タ135によって基板131を昇温させた後、蒸着源1
40内から蒸気を発生させる。
When using the vapor deposition apparatus 150, the inside of the vacuum chamber 151 is previously set in a vacuum atmosphere, and the substrate holder 1
After mounting the substrate 131 on the substrate 30 and heating the substrate 131 by the heater 135 in the substrate holder 130, the evaporation source 1
The steam is generated from the inside.

【0014】蒸気発生後、有機蒸着源140の開口部近
傍に配置されたシャッタ142を開け、蒸気を真空槽1
51内に放出させ、膜厚モニタ143に付着させ、蒸気
放出速度を測定する。
After the generation of the vapor, the shutter 142 arranged near the opening of the organic vapor deposition source 140 is opened, and the vapor is released from the vacuum chamber 1.
51, and is attached to the film thickness monitor 143, and the vapor release rate is measured.

【0015】有機薄膜材料の蒸気が安定に放出されるよ
うになった後、基板131近傍に配置されたシャッタ1
32を開け、蒸気を基板131表面に到達させ、有機薄
膜の成長を開始する。
After the vapor of the organic thin film material is released stably, the shutter 1 disposed near the substrate 131
32 is opened, the vapor reaches the surface of the substrate 131, and the growth of the organic thin film is started.

【0016】このような有機蒸着源140を真空槽15
1内に複数個配置しておけば、一方の有機蒸着源140
から有機薄膜の基材を放出させ、他の有機蒸着源140
からドーパントを放出させることで、基板131方面に
所望特性の有機薄膜を形成することが可能となってい
る。
The organic vapor deposition source 140 is connected to the vacuum chamber 15
If a plurality of the organic vapor deposition sources 140
The organic thin film substrate is released from the
By releasing the dopant from the substrate, an organic thin film having desired characteristics can be formed on the substrate 131.

【0017】ところで、近年では、有機EL素子を用い
た表示装置には一層の大口径化が要求されているが、上
述した容器110では、図9に示すように、収容孔22
1〜2224内の有機薄膜材料225から発生した蒸気
219が通路221中を上昇する間に指向性が付与され
てしまい、開放口121から放出されると狭い範囲にし
か到達できず、その結果、大口径基板表面に形成される
有機薄膜が不均一になるという問題がある。
In recent years, a display device using an organic EL element has been required to have a larger diameter. However, in the above-described container 110, as shown in FIG.
2 1-222 steam 219 generated from the organic thin film material 225 in the 4 will be directed is applied while raising the middle passage 221, can only be reached in a narrow range when released from the open outlet 121, the As a result, there is a problem that the organic thin film formed on the surface of the large-diameter substrate becomes uneven.

【0018】[0018]

【発明が解決しようとする課題】本発明は上記従来技術
の不都合を解決するために創作されたもので、その目的
は、大口径基板に均一な有機薄膜を形成できる技術を提
供することにある。
SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned disadvantages of the prior art, and has as its object to provide a technique capable of forming a uniform organic thin film on a large-diameter substrate. .

【0019】[0019]

【課題を解決するための手段】上記課題を解決するため
に、請求項1記載の発明装置は、有機薄膜材料を収容可
能な有底の収容孔を複数有する容器であって、前記各収
容孔内で前記有機薄膜材料の蒸気を発生させたときに、
前記各収容孔内で前記蒸気が流れる部分は、前記容器中
央から外方に向けて傾斜されていることを特徴とする。
According to a first aspect of the present invention, there is provided a container having a plurality of bottomed storage holes capable of storing an organic thin film material, wherein each of the storage holes is provided. When the vapor of the organic thin film material is generated within,
The portion in which the steam flows in each of the accommodation holes is inclined outward from the center of the container.

【0020】請求項2記載の発明装置は、請求項1記載
の容器であって、前記収容孔内で前記蒸気が流れる部分
は、互いに異なる方向に向けられたことを特徴とする。
According to a second aspect of the present invention, there is provided the container according to the first aspect, wherein portions in which the steam flows in the accommodation holes are directed in different directions.

【0021】請求項3記載の発明装置は、請求項1又は
請求項2のいずれか1項記載の容器であて、前記収容孔
から蒸気が容器の外部に放出される開放口は、該容器の
外方に向けて傾斜されたことを特徴とする。
According to a third aspect of the present invention, there is provided the container according to any one of the first to second aspects, wherein an opening through which the vapor is discharged from the storage hole to the outside of the container is provided in the container. It is characterized by being inclined outward.

【0022】請求項4記載の発明装置は、請求項1乃至
請求項3のいずれか1項記載の容器であって、前記各収
容孔は、下部で連通されたことを特徴とする。
According to a fourth aspect of the present invention, there is provided the container according to any one of the first to third aspects, wherein each of the receiving holes is communicated with a lower portion.

【0023】請求項5記載の発明は、請求項4記載の容
器であって、前記各収容孔が連通した部分は、前記容器
の中心軸線上に配置されたことを特徴とする。
According to a fifth aspect of the present invention, in the container according to the fourth aspect, a portion where each of the receiving holes communicates is arranged on a central axis of the container.

【0024】請求項6記載の発明方法は、有機蒸着源内
で有機薄膜材料の蒸気を生成し、真空槽内に放出させて
基板表面に有機薄膜を成長させる有機薄膜製造方法であ
って、前記真空槽内に前記蒸気を放出させる際、前記真
空槽内に気体を導入することを特徴とする。
According to a sixth aspect of the present invention, there is provided a method for producing an organic thin film, wherein a vapor of an organic thin film material is generated in an organic vapor deposition source and released into a vacuum chamber to grow an organic thin film on a substrate surface. When discharging the vapor into the tank, a gas is introduced into the vacuum tank.

【0025】請求項7記載の発明方法は、前記真空槽内
が、1.33×10-4Paから6.65×10-2Paま
での圧力範囲になるように前記気体を導入することを特
徴とする。
According to a seventh aspect of the present invention, the gas is introduced so that the inside of the vacuum chamber has a pressure range of 1.33 × 10 −4 Pa to 6.65 × 10 −2 Pa. Features.

【0026】請求項8記載の発明方法は、前記蒸着源内
に、請求項1乃至請求項5のいずれか1項記載の容器を
配置し、前記各収容孔の前記開放口から前記蒸気を放出
させることを特徴とする請求項6又は請求項7のいずれ
か1項記載の有機薄膜製造方法。
In the method according to the present invention, the container according to any one of the first to fifth aspects is disposed in the vapor deposition source, and the vapor is released from the opening of each of the accommodation holes. The method for producing an organic thin film according to claim 6, wherein:

【0027】本発明は上述のように構成されており、上
端部が開放され、下端部が閉塞された有底の収容孔を複
数有する容器である。このような容器の周囲にマイクロ
ヒータ等の抵抗加熱手段を配置し、各収容孔内に有機薄
膜材料を収容した状態で抵抗加熱手段を発熱させると、
容器壁面からの熱伝導によって有機薄膜材料が加熱さ
れ、発生した蒸気が、各収容孔から放出される。
[0027] The present invention is a container having a plurality of bottomed receiving holes which are configured as described above and whose upper end is open and whose lower end is closed. When a resistance heating means such as a micro heater is arranged around such a container, and the resistance heating means generates heat in a state where the organic thin film material is accommodated in each accommodation hole,
The organic thin film material is heated by heat conduction from the container wall, and the generated vapor is released from each of the storage holes.

【0028】一般に、収容孔の底部で発生した蒸気が、
収容孔上端部の開放口から放出される場合、収容孔内の
蒸気の通路が蒸気に指向性を与え、「煙突効果」によっ
て開放口から放出された後の拡散を制限してしまう。
Generally, the steam generated at the bottom of the accommodation hole is
When the steam is discharged from the opening at the upper end of the housing hole, the vapor passage in the housing hole gives directivity to the steam, and the diffusion after the air is released from the opening is limited by the “chimney effect”.

【0029】本発明の容器は、収容孔内で蒸気が流れる
部分が、容器中央から外方に向けて傾斜されているの
で、蒸気が容器から放出される際に、蒸気が容器の外方
に向けて放出される。従って、収容孔を複数設けた場
合、「煙突効果」の影響があっても、有機薄膜材料の蒸
気は、広範囲に均一に到達できるようになり、基板表面
に均一な有機薄膜を形成することが可能になっている。
In the container of the present invention, the portion in which the steam flows in the accommodation hole is inclined outward from the center of the container, so that when the steam is released from the container, the steam flows out of the container. Released toward. Therefore, when a plurality of accommodation holes are provided, the vapor of the organic thin film material can reach a wide range and uniform even if the effect of the "chimney effect" is exerted, and a uniform organic thin film can be formed on the substrate surface. It is possible.

【0030】収容孔の数は、多い程均一性が向上する
が、成膜対象の基板の形状によって必要な個数は異な
る。矩形形状の基板を用いる場合、4個以上が望まし
い。このような収容孔の場合、各収容孔内で蒸気が流れ
る部分を互いに異なる方向に向けておくと、蒸気が一層
均一に放出されるようになる。
As the number of receiving holes increases, the uniformity improves, but the required number differs depending on the shape of the substrate on which the film is formed. When a rectangular substrate is used, four or more substrates are desirable. In the case of such a storage hole, if the portions through which the steam flows in the respective storage holes are directed in different directions, the steam is more uniformly discharged.

【0031】以上の容器の場合、各収容孔から放出され
た蒸気は、容器の中心軸上で重なりやすい。従って、各
収容孔の開放口を容器の外方に向け、蒸気が容器中央か
ら外方に向かって放出されるようにしておくとよい。
In the case of the above-described containers, the vapor discharged from each of the storage holes tends to overlap on the central axis of the container. Therefore, it is preferable that the opening of each accommodation hole is directed to the outside of the container so that the steam is discharged outward from the center of the container.

【0032】ところで、各収容孔内に有機薄膜材料を収
容させる場合、等しい量を個別に収容させることは煩雑
である。従って、各収容孔をその下部で連通させ、その
部分に有機蒸着材料を配置できるようにしておくと、1
ヶ所で発生した蒸気が各収容孔を通過して放出されるよ
うしておくとよい。
When the organic thin film material is accommodated in each accommodation hole, it is troublesome to accommodate the same amount individually. Therefore, when the respective accommodation holes are communicated with each other at the lower portion so that the organic vapor deposition material can be disposed at that portion, 1
It is preferable that the steam generated at each of the locations is discharged through each of the storage holes.

【0033】ところで、有機薄膜材料の蒸気が真空槽内
に放出された後、直進する場合には、真空槽内での広が
りが狭くなってしまうと考えられる。そこで本発明で
は、有機薄膜を成長させる際、真空槽内に有機薄膜材料
の蒸気と反応しない気体を導入し、蒸気を構成する有機
化合物分子と気体分子とを衝突させ、有機化合物分子を
散乱させることで、蒸気がより広い範囲に到達できるよ
うにしている。
By the way, if the vapor of the organic thin-film material goes straight after being released into the vacuum chamber, it is considered that the spread in the vacuum chamber becomes narrow. Therefore, in the present invention, when growing an organic thin film, a gas that does not react with the vapor of the organic thin film material is introduced into the vacuum chamber, and the organic compound molecules constituting the vapor collide with the gas molecules to scatter the organic compound molecules. This allows the steam to reach a wider area.

【0034】一般に、蒸着源から蒸気が放出された場
合、真空中では余弦則に従って広がるが、計算結果によ
ると、上述の収容孔を4個有する容器を用い、真空槽内
に窒素ガスを8.0×10-4Pa(6.0×10-6Torr)
まで導入して蒸気を放出させた場合、基板表面に、図5
のグラフ中の曲線L1で示すような膜厚分布で有機薄膜
を形成できた(平均成長速度1.29Å/sec))。この曲
線L1は、cos2.5θに従うが、従来技術の容器では、
蒸気は真上に放出されるため、cos12θに従って曲線
2のような狭い分布になる。
In general, when a vapor is released from a vapor deposition source, the vapor spreads in a vacuum according to the cosine law. However, according to the calculation result, a container having four of the above-described accommodation holes is used, and nitrogen gas is introduced into the vacuum chamber. 0 × 10 −4 Pa (6.0 × 10 −6 Torr)
5 and the vapor was released,
Could of forming a film thickness organic thin film distribution as shown by the curve L 1 in the graph (average growth rate 1.29Å / sec)). This curve L 1 follows cos 2.5 θ, but in the prior art container:
Since steam is released directly above, it becomes narrow distribution like the curve L 2 in accordance with cos 12 theta.

【0035】有機薄膜に±10%の膜厚分布が許される
場合、本発明の容器では、直径D1の基板を使用できる
のに対し、従来技術の容器では、その約半分の大きさの
直径D2の基板しか使用できないことになる。
When a film thickness distribution of ± 10% is allowed for the organic thin film, a substrate having a diameter D 1 can be used in the container of the present invention, whereas a diameter of about half that of the prior art container can be used. only board of D 2 will not be able to use.

【0036】なお、真空槽内に気体を導入する場合、そ
の圧力が低すぎると散乱の効果が少なく、多すぎると蒸
気放出量が減り、成膜速度が低下するので、1.33×
10 -4Pa以上6.65×10-2Pa以下の圧力範囲が
適当である。
When gas is introduced into the vacuum chamber,
If the pressure is too low, the scattering effect is small, and if it is too
Since the amount of gas release is reduced and the film forming speed is reduced, 1.33 ×
10 -FourPa or more 6.65 × 10-2Pressure range below Pa
Appropriate.

【0037】このように、本発明の容器を使用した場
合、真空槽内に蒸気が均等に放出され、また、そのとき
真空槽内に気体を導入しておくと、放出された蒸気が散
乱されるので、大口径基板表面に、膜厚分布や特性分布
が均一な有機薄膜を形成することが可能となっている。
As described above, when the container of the present invention is used, the vapor is uniformly discharged into the vacuum chamber, and if the gas is introduced into the vacuum chamber at that time, the released vapor is scattered. Therefore, it is possible to form an organic thin film having a uniform film thickness distribution and characteristic distribution on the surface of a large-diameter substrate.

【0038】[0038]

【発明の実施の形態】本発明の有機薄膜製造方法を、本
発明の容器と共に説明する。図1、2を参照し、符号1
0は本発明の容器の一例であり、上側の図は平面図、下
側の図はそのA−A線截断面図である。また、図2は斜
視図である。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The method for producing an organic thin film of the present invention will be described together with the container of the present invention. Reference is made to FIGS.
Numeral 0 is an example of the container of the present invention. The upper figure is a plan view, and the lower figure is a sectional view taken along line AA. FIG. 2 is a perspective view.

【0039】この容器10は、円柱形形状の下部17
と、その上部の膨出部分18とで構成された容器本体1
1を有している。
The container 10 has a cylindrical lower portion 17.
And a container body 1 composed of
One.

【0040】該容器本体11は、カーボングラファイ
ト、炭化珪素、又は炭化珪素をコーティングしたカーボ
ングラファイト等の不透明なセラミックスで構成されて
おり、それらの材料を成形する際に下部17と膨出部分
18とは一体になるようにされている。
The container body 11 is made of opaque ceramics such as carbon graphite, silicon carbide, or carbon graphite coated with silicon carbide. Are to be united.

【0041】膨出部分18は下部17よりも大径に形成
されており、周囲には、鍔部24が設けられている。ま
た、膨出部分18の上部から下部17側に向けて、4個
の収容孔221〜224が設けられている。
The bulging portion 18 is formed to have a larger diameter than the lower portion 17, and a flange 24 is provided around the bulging portion 18. Also, from the top of the bulging portion 18 toward the bottom 17 side, the four accommodating hole 22 1-22 4 is provided.

【0042】各収容孔221〜224は、容器本体を所定
深さまで、穿設することで形成されており、その横断面
は円形であり、下端部分131〜134は有底で、上端部
分がそれぞれ開放口121〜124にされている。各開放
口121〜124は、容器10の中心軸線33を中心とし
て互いに対称になるように、膨出部分18上部の周辺部
分に配置されている。
[0042] Each housing hole 22 1-22 4 the container body to a predetermined depth, are formed by drilling, its cross section is circular, the lower end portions 131-134 in a bottom, upper end is respectively open port 12 1 to 12 4. Each opening port 12 1 to 12 4, to be symmetrical with each other about the center axis 33 of the container 10 are arranged in the peripheral portion of the bulge portion 18 top.

【0043】また、各下端部分131〜134は、中心軸
線33上で連通するように構成されており、従って、各
収容孔221〜224の中心軸線321〜324は、共通の
底部15から開放口121〜124に向けて外方に広がる
ように傾斜している。
[0043] Further, each of the lower end portion 131-134 is configured to communicate over the center axis 33, therefore, the central axis 321 to 323 4 of the accommodation hole 22 1-22 4, common It is inclined so as to spread outwardly towards the bottom 15 to an open port 12 1 to 12 4.

【0044】各収容孔221〜224の中心軸線321
324と容器10の中心軸線33とが成す角度αは、成
膜対象となる基板の大きさや、その基板と容器との間の
距離によっても変わるが、この容器10では、角度αは
約20度になっている。
The central axis 32 1 of the accommodation hole 22 1-22 4
32 4 and the angle formed by the central axis 33 of the container 10 alpha, size and the substrate to be film-forming target, but also changes depending on the distance between the substrate and the container, in the container 10, the angle alpha of about 20 It has become a degree.

【0045】膨出部分18の上端部の各開放口121
124が配置された部分は傾斜しており、各開放口121
〜124はその傾斜に従い、外方に向けて傾斜されてい
る。また、各収容孔221〜224の直径や深さも、角度
αの場合と同様に、基板との関係で値が変わるが、この
容器10では、直径は約8mm、深さは約35mmとな
っている。
Each of the open ports 12 1 to 12 at the upper end of the bulging portion 18
12 4 are disposed portion is inclined, the release opening 12 1
12 4 in accordance with the inclination, which is inclined outward. Also, the diameter and depth of each of the accommodating holes 22 1 to 22 4, as in the case of the angle alpha, the value is changed in relation to the substrate, in the container 10, the diameter of about 8 mm, depth of about 35mm Has become.

【0046】このような容器10を用いる場合、予め粉
体状の有機薄膜材料を各開放口12 1〜124から落とし
込み、底部15に収容させ、その状態で蒸着装置に装着
しておく。
When using such a container 10,
The body-shaped organic thin film material is supplied to each 1~ 12FourDropped from
And put it in the bottom part 15 and attach it to the vapor deposition device in that state
Keep it.

【0047】図3の符号50は、その状態の蒸着装置を
示しており、真空槽51底面に設けられた複数の蒸着源
40内に、容器10が、鍔部40によって位置決めされ
た状態で、1個ずつ装着されている。
Reference numeral 50 in FIG. 3 denotes a vapor deposition apparatus in that state. In a state where the container 10 is positioned by the flange portion 40 in a plurality of vapor deposition sources 40 provided on the bottom surface of the vacuum chamber 51, They are mounted one by one.

【0048】真空槽51には、真空排気系45とガス導
入系46とが接続されており、蒸着装置50を使用する
場合、真空排気系45を動作させ、真空槽51内部を予
め真空排気しておく。真空槽51内が所定圧力に到達し
た後、その真空雰囲気を維持しながら、成膜対象となる
基板31を真空槽51内に搬入する。
A vacuum exhaust system 45 and a gas introduction system 46 are connected to the vacuum chamber 51. When the vapor deposition device 50 is used, the vacuum exhaust system 45 is operated to evacuate the inside of the vacuum chamber 51 in advance. Keep it. After the inside of the vacuum chamber 51 reaches a predetermined pressure, the substrate 31 on which a film is to be formed is carried into the vacuum chamber 51 while maintaining the vacuum atmosphere.

【0049】真空槽51の天井側には基板ホルダ30が
設けられており、搬入した基板はその基板ホルダ30に
装着する。符号31は装着された状態の基板を示してい
る。各容器10の周囲には、マイクロヒータから成る発
熱体41が配置されており、該マイクロヒータ41に通
電して発熱させ、各容器10内に収容された有機薄膜材
料を加熱する。
A substrate holder 30 is provided on the ceiling side of the vacuum chamber 51, and the loaded substrate is mounted on the substrate holder 30. Reference numeral 31 indicates a mounted board. A heating element 41 composed of a micro heater is arranged around each container 10, and the micro heater 41 is energized to generate heat, thereby heating the organic thin film material stored in each container 10.

【0050】有機薄膜材料を所定温度まで昇温させ、脱
ガスを行った後、ガス導入系46から真空槽51内に気
体を導入する。この気体は、有機薄膜材料とは反応しな
いアルゴンガスや窒素ガス等の不活性ガスが望ましい。
After the temperature of the organic thin film material is raised to a predetermined temperature and degassing is performed, a gas is introduced from the gas introduction system 46 into the vacuum chamber 51. This gas is desirably an inert gas such as argon gas or nitrogen gas which does not react with the organic thin film material.

【0051】気体を導入することにより、真空槽51内
を所定圧力まで昇圧させた後、発熱体41への通電量を
大きくし、容器10内の有機薄膜材料を更に昇温させ
る。ここでは、母材となる有機薄膜材料とドーパントと
なる有機薄膜材料とがそれぞれ別個に配置された2個の
容器10を加熱するものとする。有機薄膜材料から蒸気
が発生する温度は、有機薄膜材料の種類の他、その有機
薄膜材料が置かれた雰囲気の圧力が影響することが知ら
れている。
After the pressure in the vacuum chamber 51 is increased to a predetermined pressure by introducing gas, the amount of electricity to the heating element 41 is increased, and the temperature of the organic thin film material in the container 10 is further increased. Here, it is assumed that two containers 10 in which an organic thin film material serving as a base material and an organic thin film material serving as a dopant are separately arranged are heated. It is known that the temperature at which vapor is generated from an organic thin film material is affected by the pressure of the atmosphere in which the organic thin film material is placed, in addition to the type of the organic thin film material.

【0052】従って、有機薄膜材料が昇温し、真空雰囲
気中では蒸気が発生する温度になった場合でも、有機薄
膜材料が所定の圧力雰囲気に置かれている場合、蒸気を
発生させないことができる。
Therefore, even when the temperature of the organic thin film material rises and reaches a temperature at which steam is generated in a vacuum atmosphere, when the organic thin film material is placed in a predetermined pressure atmosphere, no steam can be generated. .

【0053】有機薄膜を製造する場合、脱ガス後、有機
薄膜材料を真空雰囲気中では蒸気が発生する温度まで昇
温させるが、そのとき、真空槽51内を比較的高い圧力
(低真空度)まで昇圧させ、蒸気が発生しないようにして
おく。
In the case of manufacturing an organic thin film, after degassing, the organic thin film material is heated in a vacuum atmosphere to a temperature at which vapor is generated.
(Low vacuum) so that steam is not generated.

【0054】有機薄膜材料の温度が安定したところで、
気体の導入を停止し、真空槽51内を真空排気し、1.
33×10-4Pa(1.0×10-6Torr)以上6.65×
10 -2Pa(5.0×10-4Torr)以下の範囲の所定圧力
まで降圧させると、各有機薄膜材料から蒸気が発生す
る。
When the temperature of the organic thin film material is stabilized,
The introduction of gas is stopped, and the inside of the vacuum chamber 51 is evacuated.
33 × 10-FourPa (1.0 × 10-6Torr) or more 6.65 ×
10 -2Pa (5.0 × 10-FourTorr)
When the pressure is reduced to
You.

【0055】このとき、有機薄膜材料は、収容孔221
〜224の共通の底部15内に配置されており、発生し
た蒸気は、各収容孔221〜224の底部15よりも上方
部分を流れる際、進行方向が容器10の外方に向けら
れ、その状態で、開放口121〜124から放射状に放出
される。
At this time, the organic thin film material is placed in the accommodation hole 22 1.
Is disposed to 22 4 of the common bottom section 15, generated steam, it flows an upper portion than the bottom 15 of the accommodation hole 22 1 to 22 4, the traveling direction is directed to the outside of the container 10 in this state, it is radially emitted from the opening port 12 1 to 12 4.

【0056】その状態で各蒸着源40上方に設けられた
シャッタ42を開け、放出された蒸気を膜厚モニタ43
に到達させ、蒸気の付着速度から蒸気の放出速度を測定
する。各蒸着源40から所定速度で安定に蒸気が放出さ
れた後、基板31近傍に配置されたシャッタ32を開
け、有機薄膜材料の蒸気を基板31に到達させると、基
板31表面への有機薄膜形成が開始される。
In this state, the shutter 42 provided above each vapor deposition source 40 is opened, and the released vapor is used as a film thickness monitor 43.
And the rate of vapor release is measured from the rate of vapor deposition. After the vapor is stably released from each of the evaporation sources 40 at a predetermined speed, the shutter 32 arranged near the substrate 31 is opened to allow the vapor of the organic thin film material to reach the substrate 31. Is started.

【0057】本発明の容器10では、各収容孔221
224とその開放口121〜124とは、容器本体11の
中心軸線に対し、外方に向けて傾斜されている。図4の
符号19は、各開放口121〜124から放出された蒸気
を模式的に示したものであり、このように、広範囲に放
出された蒸気19が気体と衝突して散乱されるから、基
板31表面に均一に到達すると、大口径の基板31表面
に膜厚分布のよい有機薄膜を形成することができる。
In the container 10 of the present invention, each of the receiving holes 22 1 to 22 1 is formed .
22 4 and its opening port 12 1 to 12 4, the center axis line of the container body 11 and is inclined outward. Reference numeral 19 in FIG. 4, the vapor released from the opening port 12 1 to 12 4 have the meanings indicated schematically Thus, steam 19, which is extensively released is scattered by collisions with the gas Therefore, when the film reaches the surface of the substrate 31 uniformly, an organic thin film having a good film thickness distribution can be formed on the surface of the large-diameter substrate 31.

【0058】この場合、有機薄膜の母材となる有機薄膜
材料の蒸気と、ドーパントとなる有機薄膜材料の蒸気と
は、基板31表面で均一である必要があるが、それらの
蒸気が異なる蒸着源40から放出される場合でも、各蒸
気が基板31表面に均一に到達する結果、面内での混合
比率や膜厚が均一な有機薄膜を形成することができる。
In this case, the vapor of the organic thin film material serving as the base material of the organic thin film and the vapor of the organic thin film material serving as the dopant need to be uniform on the surface of the substrate 31. Even when the vapor is released from the substrate 40, each vapor uniformly reaches the surface of the substrate 31, so that an organic thin film having a uniform in-plane mixing ratio and film thickness can be formed.

【0059】なお、各蒸着源40内に同じ有機薄膜材料
を配置することも可能であり、その場合、短時間で所望
膜厚の有機薄膜を得ることができる。
It is also possible to arrange the same organic thin film material in each evaporation source 40, in which case an organic thin film having a desired thickness can be obtained in a short time.

【0060】[0060]

【発明の効果】大口径基板表面に均一な膜厚の有機薄膜
を形成できる。
According to the present invention, an organic thin film having a uniform thickness can be formed on the surface of a large-diameter substrate.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の一例の容器の平面図及びそのA−A線
截断面図
FIG. 1 is a plan view of a container according to an example of the present invention and a cross-sectional view taken along line AA of FIG.

【図2】その容器の斜視図FIG. 2 is a perspective view of the container.

【図3】本発明の容器を装着した蒸着装置FIG. 3 is a vapor deposition apparatus equipped with the container of the present invention.

【図4】本発明の容器から放出される蒸気の状態を説明
するための図
FIG. 4 is a view for explaining a state of steam released from the container of the present invention.

【図5】有機薄膜の膜厚分布を説明するためのグラフFIG. 5 is a graph for explaining a film thickness distribution of an organic thin film.

【図6】有機EL素子を説明するための図FIG. 6 is a diagram illustrating an organic EL element.

【図7】従来技術の容器を用いた蒸着装置を説明するた
めの図
FIG. 7 is a view for explaining a vapor deposition apparatus using a container according to the related art.

【図8】(a):従来技術の容器の平面図 (b):その
B−B線断面図
8A is a plan view of a container of the prior art, and FIG. 8B is a sectional view taken along line BB of FIG.

【図9】従来技術の容器から放出される蒸気を説明する
ための図
FIG. 9 is a diagram for explaining steam released from a container according to the related art.

【符号の説明】[Explanation of symbols]

10……容器 121〜124……開放口 221
224……収容孔 33……容器の中心軸線 40
……蒸着源 51……真空槽
10 Containers 12 1 to 12 4 Open ports 22 1 to
22 4 … Accommodation hole 33… Central axis of container 40
…… Evaporation source 51 …… Vacuum tank

Claims (8)

【特許請求の範囲】[Claims] 【請求項1】有機薄膜材料を収容可能な有底の収容孔を
複数有する容器であって、 前記各収容孔内で前記有機薄膜材料の蒸気を発生させた
ときに、 前記各収容孔内で前記蒸気が流れる部分は、前記容器中
央から外方に向けて傾斜されていることを特徴とする容
器。
1. A container having a plurality of bottomed accommodation holes capable of accommodating an organic thin film material, wherein when vapor of the organic thin film material is generated in each of the accommodation holes, The container, wherein a portion through which the vapor flows is inclined outward from a center of the container.
【請求項2】前記収容孔内で前記蒸気が流れる部分は、
互いに異なる方向に向けられたことを特徴とする請求項
1記載の容器。
2. A part in which the steam flows in the accommodation hole,
The container of claim 1, wherein the container is oriented in different directions.
【請求項3】前記収容孔から蒸気が容器の外部に放出さ
れる開放口は、該容器の外方に向けて傾斜されたことを
特徴とする請求項1又は請求項2のいずれか1項記載の
容器。
3. The container according to claim 1, wherein the opening through which the vapor is released from the housing hole to the outside of the container is inclined toward the outside of the container. The container as described.
【請求項4】前記各収容孔は、下部で連通されたことを
特徴とする請求項1乃至請求項3のいずれか1項記載の
容器。
4. The container according to claim 1, wherein each of the receiving holes communicates with a lower portion.
【請求項5】前記各収容孔が連通した部分は、前記容器
の中心軸線上に配置されたことを特徴とする請求項4記
載の容器。
5. The container according to claim 4, wherein a portion where the storage holes communicate with each other is disposed on a central axis of the container.
【請求項6】有機蒸着源内で有機薄膜材料の蒸気を生成
し、真空槽内に放出させて基板表面に有機薄膜を成長さ
せる有機薄膜製造方法であって、 前記真空槽内に前記蒸気を放出させる際、前記真空槽内
に気体を導入することを特徴とする有機薄膜製造方法。
6. A method for producing an organic thin film, wherein a vapor of an organic thin film material is generated in an organic vapor deposition source and released into a vacuum chamber to grow an organic thin film on a substrate surface, wherein the vapor is released into the vacuum chamber. A method for producing an organic thin film, wherein a gas is introduced into the vacuum chamber when performing the process.
【請求項7】前記真空槽内が、1.33×10-4Paか
ら6.65×10-2Paまでの圧力範囲になるように前
記気体を導入することを特徴とする有機薄膜製造方法。
7. A method for producing an organic thin film, wherein the gas is introduced so that the inside of the vacuum chamber has a pressure range of 1.33 × 10 −4 Pa to 6.65 × 10 −2 Pa. .
【請求項8】前記蒸着源内に、請求項1乃至請求項5の
いずれか1項記載の容器を配置し、前記各収容孔の前記
開放口から前記蒸気を放出させることを特徴とする請求
項6又は請求項7のいずれか1項記載の有機薄膜製造方
法。
8. The container according to claim 1, wherein the vapor is discharged from the opening of each of the storage holes. The method for producing an organic thin film according to any one of claims 6 to 7.
JP19195098A 1998-07-07 1998-07-07 Organic thin film material container, vapor deposition apparatus, organic thin film manufacturing method Expired - Lifetime JP3839587B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19195098A JP3839587B2 (en) 1998-07-07 1998-07-07 Organic thin film material container, vapor deposition apparatus, organic thin film manufacturing method

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Cited By (4)

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JP2002348659A (en) * 2001-05-23 2002-12-04 Junji Kido Continuous vapor deposition apparatus, vapor deposition apparatus and vapor deposition method
JP2006169551A (en) * 2004-12-13 2006-06-29 Nippon Biitec:Kk Molecule feeder for thin film deposition
JP2007002291A (en) * 2005-06-23 2007-01-11 Utec:Kk Evaporation source, vapor deposition system, and vapor deposition method
CN110344004A (en) * 2019-08-29 2019-10-18 上海天马有机发光显示技术有限公司 A kind of vapor deposition crucible and evaporated device

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CN103993268B (en) 2014-04-30 2017-02-15 京东方科技集团股份有限公司 Crucible

Cited By (7)

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JP2002348659A (en) * 2001-05-23 2002-12-04 Junji Kido Continuous vapor deposition apparatus, vapor deposition apparatus and vapor deposition method
JP4704605B2 (en) * 2001-05-23 2011-06-15 淳二 城戸 Continuous vapor deposition apparatus, vapor deposition apparatus and vapor deposition method
JP2006169551A (en) * 2004-12-13 2006-06-29 Nippon Biitec:Kk Molecule feeder for thin film deposition
JP4560394B2 (en) * 2004-12-13 2010-10-13 長州産業株式会社 Molecule supply equipment for thin film formation
KR101204527B1 (en) * 2004-12-13 2012-11-23 쵸슈 산교 가부시키가이샤 A molecule supply source for use in thin-film forming
JP2007002291A (en) * 2005-06-23 2007-01-11 Utec:Kk Evaporation source, vapor deposition system, and vapor deposition method
CN110344004A (en) * 2019-08-29 2019-10-18 上海天马有机发光显示技术有限公司 A kind of vapor deposition crucible and evaporated device

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