JP2000012231A - Thin-film el element - Google Patents
Thin-film el elementInfo
- Publication number
- JP2000012231A JP2000012231A JP10169834A JP16983498A JP2000012231A JP 2000012231 A JP2000012231 A JP 2000012231A JP 10169834 A JP10169834 A JP 10169834A JP 16983498 A JP16983498 A JP 16983498A JP 2000012231 A JP2000012231 A JP 2000012231A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- thin
- film
- emitting layer
- srs
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は薄型、平面、長寿
命、高コントラストなどを特徴とする薄膜ＥＬディスプ
レイに使用される青色用薄膜ＥＬ素子に関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a blue thin-film EL device used for a thin-film EL display characterized by being thin, flat, long-lived, and high in contrast.
【０００２】[0002]
【従来の技術】発光現象の一つであるエレクトロルネッ
センスを応用したＥＬ素子は、平面型ディスプレイに用
いられている。このディスプレイのフルカラー化のため
には、赤、緑、青の三原色を呈する発光層が必要であ
る。青色発光層については、セリウム（Ｃｅ）を付活し
たＳｒＳ（ＳｒＳ：Ｃｅ）等が用いられてきた。しか
し、この発光層の発光ピーク波長は４８０ｎｍ程度より
も短波長にならないため純粋な青色とならず色再現範囲
を狭くしている。そこで最近では特開平５−６５４７８
号公報「青色光発光リン光体を有する交流薄膜エレクト
ロルミネッセンス装置」、特開平８−１６２２７３号公
報「薄膜ＥＬ素子」あるいは特開平８−８３６８５号公
報「白色ＥＬ素子」に開示されているように青色発光材
料としてチオガレートが検討されている。2. Description of the Related Art An EL device utilizing electroluminescence, which is one of light emission phenomena, is used for a flat panel display. In order to make the display full-color, a light-emitting layer exhibiting three primary colors of red, green and blue is required. For the blue light emitting layer, SrS (SrS: Ce) activated with cerium (Ce) has been used. However, since the light emission peak wavelength of this light emitting layer does not become shorter than about 480 nm, it does not become pure blue and narrows the color reproduction range. Therefore, recently, Japanese Patent Application Laid-Open No. 5-65478
As disclosed in Japanese Unexamined Patent Publication No. H8-162273, "Thin-film EL element" or Japanese Unexamined Patent Publication No. 8-83885, "white EL element". Thiogallate has been studied as a blue light emitting material.
【０００３】[0003]
【発明が解決しようとする課題】薄膜ＥＬディスプレイ
でフルカラー表示を実現するには、高輝度で純粋な色調
をもつ青色発光素子が必要であるが、特開平５−６５４
７８号公報では薄膜作成時に高温の熱処理が必要であっ
たり、特開平８−１６２２７３号公報では青色の色純度
が劣る欠点や複雑な構造を必要としたり、また、特開平
８−８３６８５号公報における白色発光に用いるチオガ
レートの発光成分である青色成分は弱く、カラーフィル
タと組み合わせた時の青色発光が不足するため十分広い
色再現範囲にならないなどの欠点があった。To realize full-color display with a thin-film EL display, a blue light-emitting element having a high luminance and a pure color tone is required.
No. 78 requires high-temperature heat treatment at the time of forming a thin film, and Japanese Patent Application Laid-Open No. 8-162273 requires a defect of inferior blue color purity and a complicated structure. The blue component, which is the luminescent component of thiogallate used for white light emission, is weak and has a drawback that the color gamut is not sufficiently wide due to insufficient blue light emission when combined with a color filter.
【０００４】そこで本発明の目的は、高輝度で純粋な青
色発光を有し、薄膜ＥＬディスプレイでフルカラー表示
に適する青色発光用薄膜ＥＬ素子を提供せんとするもの
である。It is an object of the present invention to provide a blue light emitting thin film EL device which has high luminance and emits pure blue light and is suitable for full color display in a thin film EL display.
【０００５】[0005]
【課題を解決するための手段】この目的を達成するた
め、本発明薄膜ＥＬ素子は、いずれか１方が透光性を有
する１対の電極間に、発光層としてのＣｅを付活したＳ
ｒ2 Ｇａ2 Ｓ5 薄膜とこれと接するようＳｒ2 Ｇａ2 Ｓ
5 薄膜の少なくとも基板側に接合されたＳｒＳ薄膜とが
配設されるとともに、これら配設された複合薄膜と前記
１対の電極のそれぞれとの間にさらに絶縁層がそれぞれ
配設されたことを特徴とするものである。In order to achieve this object, a thin-film EL device according to the present invention is characterized in that Ce as a light-emitting layer is activated between a pair of electrodes, one of which is translucent.
r 2 Ga 2 S 5 thin film and Sr 2 Ga 2 S
(5 ) The SrS thin film bonded to at least the substrate side of the thin film is provided, and further, an insulating layer is further provided between each of the provided composite thin film and each of the pair of electrodes. It is a feature.
【０００６】また、本発明薄膜ＥＬ素子は、前記Ｃｅを
付活したＳｒ2 Ｇａ2 Ｓ5 発光層が〔１００〕軸方向に
配向されたＳｒＳ薄膜上に〔００１〕軸方向に配向され
て接合されることを特徴とするものである。Further, the present invention thin film EL device is bonded the Sr 2 Ga 2 S 5-emitting layer activated with Ce is [100] on SrS thin film oriented in the axial direction [001] is aligned axially It is characterized by being performed.
【０００７】またさらに、本発明薄膜ＥＬ素子は、前記
発光層が４８０ｎｍ以下に第１ピーク発光波長を有し、
前記発光層の発光色がＣＩＥ色度座標上０．１≦ｘ≦
０．２、０．０５≦ｙ≦０．２の青色領域に位置するこ
とを特徴とするものである。Further, in the thin film EL device of the present invention, the light emitting layer has a first peak emission wavelength at 480 nm or less,
The emission color of the light emitting layer is 0.1 ≦ x ≦ on CIE chromaticity coordinates.
It is characterized by being located in a blue region of 0.2, 0.05 ≦ y ≦ 0.2.
【０００８】[0008]
【発明の実施の形態】本発明によれば第１に、Ｃｅを付
活したＳｒ2 Ｇａ2 Ｓ5 発光層がその少なくとも基板側
に配設されたＳｒＳ薄膜と接合されるので、Ｓｒ2 Ｇａ
2 Ｓ5 薄膜多結晶粒子の配向性が良好となり、発光のた
めのキャリア注入効率が上昇して発光輝度が向上し、前
記特開平８−１６２２７３号記載の素子のように発光層
を複数積層する必要がなく複雑な構造を排除することが
できる。DESCRIPTION OF THE PREFERRED EMBODIMENTS According to the present invention, first, the Sr 2 Ga 2 S 5 light emitting layer activated with Ce is bonded to at least the SrS thin film disposed on the substrate side, so that Sr 2 Ga
2 S 5 becomes thin multi orientation of the crystal grains is good, increased carrier injection efficiency for luminescence is improved emission luminance, stacking a plurality of light emitting layers as the element of the JP-A 8-162273 Patent according No need for complicated structures.
【０００９】第２に、〔１００〕軸方向に配向されたＳ
ｒＳ薄膜上に接合されたＳｒ2 Ｇａ 2 Ｓ5 ：Ｃｅ発光層
は〔００１〕軸方向にかなり良好に配向されるので、結
晶性が改善され発光層中の多結晶粒子の配向性の単一化
がはかられて、多結晶内の電子散乱を低減でき発光輝度
がさらに向上する。またさらに第３に、セリウムイオン
は前記Ｓｒ2 Ｇａ2 Ｓ5 発光層の単一配向と結晶性改善
によって均一分散した青色発光する発光中心を形成しや
すくなり、セリウムイオン濃度を工夫するなどして、発
光層の第１ピーク発光波長を４８０ｎｍ以下、ＣＩＥ色
度座標上０．１≦ｘ≦０．２，０．０５≦ｙ≦０．２の
青色領域に選定することにより、色純度のよい青色発光
が得られディスプレイの色再現範囲を広くとることがで
きるようになる。Second, S oriented in the [100] axis direction
Sr bonded on rS thin filmTwoGa TwoSFive: Ce light emitting layer
Are very well oriented in the [001] axis,
Uniformity of orientation of polycrystalline particles in light emitting layer with improved crystallinity
Light emission brightness
Is further improved. Thirdly, cerium ion
Is the SrTwoGaTwoSFiveSingle orientation of light emitting layer and improvement of crystallinity
Luminescent centers that emit blue light uniformly dispersed by
To improve the cerium ion concentration.
The first peak emission wavelength of the optical layer is 480 nm or less, CIE color
0.1 ≤ x ≤ 0.2, 0.05 ≤ y ≤ 0.2
Blue light emission with good color purity by selecting in the blue region
And the color reproduction range of the display can be widened.
I will be able to.
【００１０】以下添附図面を参照し実施例により本発明
の実施の形態をより詳細に説明する。図１は本発明の一
実施例における薄膜ＥＬ素子の断面図である。ガラス基
板１上にＩＴＯ（インジウム、錫の酸化物）透明電極２
を電子線蒸着法により約２００ｎｍ程度の厚さになるよ
う形成する。複合薄膜７上下の絶縁層３，８は高周波マ
グネトロンスパッタ法により形成した約１００ｎｍのＳ
ｉＯ2膜と約５００ｎｍのＴａ2 Ｏ5 膜を積層した複合
絶縁層とする。Embodiments of the present invention will be described in more detail with reference to the accompanying drawings. FIG. 1 is a sectional view of a thin film EL device according to one embodiment of the present invention. ITO (indium, tin oxide) transparent electrode 2 on glass substrate 1
Is formed to a thickness of about 200 nm by an electron beam evaporation method. The insulating layers 3 and 8 above and below the composite thin film 7 are made of S
A composite insulating layer is formed by laminating an iO 2 film and a Ta 2 O 5 film of about 500 nm.
【００１１】複合薄膜７の形成要素ＳｒＳ薄膜４，６
（この実施例ではＳｒ2 Ｇａ2 Ｓ5 ：Ｃｅ発光層５を挟
む形に形成されているが、ＳｒＳ薄膜は勿論基板側のみ
でもよい）は電子線蒸着法やスパッタ法あるいはＣＶＤ
法などでも形成できるが、この実施例では共蒸着法によ
って形成した。詳細には、Ｓｒ金属とＨ2 Ｓガスを５０
０℃から６００℃に保った基板上で化学反応させて約１
００ｎｍ〜２００ｎｍの厚みに形成した。またＳｒ金属
とＧａ2 Ｓ3 化合物を基板温度６００℃以上で共蒸着す
ることによっても形成した。この場合化学反応式は ２Ｓｒ＋Ｇａ2 Ｓ3 →２ＳｒＳ＋Ｇａ2 Ｓ（蒸発）とな
る。Elements of the composite thin film 7 SrS thin films 4, 6
(In this embodiment, the Sr 2 Ga 2 S 5 : Ce light-emitting layer 5 is sandwiched, but the SrS thin film may be formed only on the substrate side).
Although it can be formed by a method or the like, in this example, it was formed by a co-evaporation method. More specifically, Sr metal and H 2 S
Chemical reaction on a substrate maintained at 0 to 600 ° C for about 1
It was formed to a thickness of 00 nm to 200 nm. In addition, Sr metal and Ga 2 S 3 compound were formed by co-evaporation at a substrate temperature of 600 ° C. or higher. In this case, the chemical reaction formula is 2Sr + Ga 2 S 3 → 2SrS + Ga 2 S (evaporation).
【００１２】基板側のＳｒＳ薄膜４形成後にＳｒ2 Ｇａ
2 Ｓ5 ：Ｃｅ発光層５を形成させるが、この時注意すべ
きことは形成されたＳｒＳ薄膜表面を空気に曝すことな
く、すなわち汚染させることなく連続して発光層Ｓｒ2
Ｇａ2 Ｓ5 ：Ｃｅを形成し、下側にできている配向性の
よい多結晶ＳｒＳ粒子を利用して配向性のよいＳｒ2Ｇ
ａ2 Ｓ5 ：Ｃｅ多結晶粒子を形成させることである（エ
ピタキシャル生成に近いといえるかもしれない）。本実
施例では、ＳｒＳ薄膜形成後連続して基板温度を５７０
℃に保ち、Ｓｒ金属、Ｇａ2 Ｓ3 化合物およびドーパン
ト形成用ＣｅＣｌ3 化合物を同時に真空中蒸発させ、Ｓ
ｒＳ薄膜上で化学反応させて膜厚約４００ｎｍに形成し
た。この場合の化学反応式は ２Ｓｒ＋２Ｇａ2 Ｓ3 →Ｓｒ2 Ｇａ2 Ｓ5 ＋Ｇａ2 Ｓ
（蒸発）となる。After forming the SrS thin film 4 on the substrate side, Sr 2 Ga
2 S 5 : Ce light-emitting layer 5 is formed, but it should be noted at this time that the light-emitting layer Sr 2 is continuously formed without exposing the formed SrS thin film surface to air, that is, without contaminating it.
Ga 2 S 5 : Ce is formed, and Sr 2 G having good orientation is formed by using polycrystalline SrS particles having good orientation formed on the lower side.
a 2 S 5 : to form Ce polycrystalline particles (may be said to be close to epitaxial generation). In this embodiment, the substrate temperature is set to 570 continuously after forming the SrS thin film.
C., and the Sr metal, the Ga 2 S 3 compound and the CeCl 3 compound for forming the dopant were simultaneously evaporated in vacuum,
A chemical reaction was performed on the rS thin film to form a film having a thickness of about 400 nm. Chemical equation in this case is 2Sr + 2Ga 2 S 3 → Sr 2 Ga 2 S 5 + Ga 2 S
(Evaporation).
【００１３】Ｃｅイオン濃度は１０原子％以下が好まし
く、これ以上の濃度になると発光層Ｓｒ2 Ｇａ2 Ｓ5 ：
Ｃｅの輝度が低下する。本実施例では薄膜形成後の熱処
理は行なわれず、最終的に上部電極９は真空蒸着法によ
る金属Ａｌ蒸着膜で膜厚は約２００ｎｍである。The Ce ion concentration is preferably 10 atomic% or less, and when the concentration is higher than 10 atomic%, the light emitting layer Sr 2 Ga 2 S 5 :
The luminance of Ce decreases. In this embodiment, no heat treatment is performed after the formation of the thin film, and finally the upper electrode 9 is a metal Al vapor-deposited film formed by a vacuum vapor deposition method and has a thickness of about 200 nm.
【００１４】本発明実施例で作成されたＳｒ2 Ｇａ2 Ｓ
5 ：Ｃｅ発光層およびその下に配置されたＳｒＳ薄膜の
Ｘ線回折パターンを図２に示す。図の横軸はブラッグ角
θの２倍を表わし、縦軸はＸ線回折強度（任意単位）、
図のピーク１１，１２，１３および１４はそれぞれ（０
０４）Ｓｒ2 Ｇａ2 Ｓ5 ，（２００）ＳｒＳ，（１１
１）ＳｒＳおよび（２２０）ＳｒＳによる回折線であ
る。２θが約２９°付近のピーク１１がＳｒ2 Ｇａ2 Ｓ
5 結晶の（００４）配向に対応している。他のいくつか
のピーク１２，１３および１４はＳｒ2 Ｇａ2 Ｓ5 ：Ｃ
ｅ発光層の下に配置したＳｒＳ薄膜からのものであり、
ＳｒＳ結晶の（２００）が主配向となっている。Ｓｒ2
Ｇａ2 Ｓ5 ：Ｃｅ発光層が良好な単一性配向を示してお
り、層内の高電界で加速された電子は配向面境界による
散乱を回避でき、輝度や効率を向上させる効果がある。The Sr 2 Ga 2 S prepared in the embodiment of the present invention
FIG. 2 shows an X-ray diffraction pattern of the 5 : Ce light-emitting layer and the SrS thin film disposed thereunder. The horizontal axis of the figure represents twice the Bragg angle θ, the vertical axis represents the X-ray diffraction intensity (arbitrary unit),
The peaks 11, 12, 13 and 14 in the figure are (0
04) Sr 2 Ga 2 S 5 , (200) SrS, (11
1) Diffraction lines by SrS and (220) SrS. The peak 11 when 2θ is about 29 ° is Sr 2 Ga 2 S
It corresponds to the (004) orientation of five crystals. Some other peaks 12, 13, and 14 are Sr 2 Ga 2 S 5 : C
e from a SrS thin film disposed below the emissive layer,
(200) of the SrS crystal is in the main orientation. Sr 2
The Ga 2 S 5 : Ce light-emitting layer shows a good single orientation, and electrons accelerated by a high electric field in the layer can avoid scattering at the boundary of the orientation plane, and have an effect of improving brightness and efficiency.
【００１５】（２００）配向したＳｒＳ薄膜と（００
４）配向したＳｒ2 Ｇａ2 Ｓ5 ：Ｃｅ発光層の格子位置
を図３（ａ），（ｂ）に示す。図で白ヌキ丸印はＳ原子
の、斜線のはいった丸印はＳｒ原子の、黒丸印はＧａ原
子の位置を示す。わずかなずれはあるが、ｃ軸に垂直な
面内にＳｒとＳの格子位置がＳｒＳの格子位置の整数倍
になるＳｒ2 Ｇａ2 Ｓ5 結晶面があり格子整合する。図
３に示した硫黄（Ｓ）の格子位置についてみると、ｘ軸
方向に３．８％、ｙ軸方向に０．０３％と格子不整合は
わずかである。これによってＳｒ2 Ｇａ2 Ｓ5 は〔００
１〕に単一配向し、しかもＳｒ2 Ｇａ2 Ｓ5 ：Ｃｅ発光
層へのキャリヤ注入が効率よく起こる。The (200) oriented SrS thin film and (00)
4) Lattice positions of the oriented Sr 2 Ga 2 S 5 : Ce light emitting layer are shown in FIGS. In the figure, white circles indicate positions of S atoms, hatched circles indicate positions of Sr atoms, and black circles indicate positions of Ga atoms. Although there is a slight shift, there is an Sr 2 Ga 2 S 5 crystal plane in which the lattice position of Sr and S is an integral multiple of the lattice position of SrS in a plane perpendicular to the c-axis, and lattice-matched. Looking at the lattice position of sulfur (S) shown in FIG. 3, the lattice mismatch is very small at 3.8% in the x-axis direction and 0.03% in the y-axis direction. Thereby, Sr 2 Ga 2 S 5 becomes [00
1), and carrier injection into the Sr 2 Ga 2 S 5 : Ce light emitting layer occurs efficiently.
【００１６】図４に本発明によるＳｒＳ薄膜を配置した
ＥＬ素子の輝度−印加電圧特性２１と配置しないＥＬ素
子の輝度−印加電圧特性２２を示す。この発光輝度−印
加電圧特性は電極間に１ｋＨｚ交流電圧を印加したとき
に得られる発光輝度を測定したものである。ＳｒＳ薄膜
の配置によって発光輝度が向上することがわかる。FIG. 4 shows a luminance-applied voltage characteristic 21 of an EL element provided with the SrS thin film according to the present invention and a luminance-applied voltage characteristic 22 of an EL element not provided. The emission luminance-applied voltage characteristic is obtained by measuring the emission luminance obtained when a 1 kHz AC voltage is applied between the electrodes. It can be seen that the emission luminance is improved by the arrangement of the SrS thin film.
【００１７】本発明によって作成したＥＬ発光層の発光
スペクトルを図５に示す。Ｃｅ3+イオンの５ｄ−４ｆ電
子遷移による発光である。第一ピーク波長２３が４４３
ｎｍ付近にあるため、青色成分を十分にもった発光であ
る。FIG. 5 shows an emission spectrum of the EL light emitting layer prepared according to the present invention. This is light emission due to 5d-4f electronic transition of Ce 3+ ion. The first peak wavelength 23 is 443
Since the wavelength is around nm, the light emission has a sufficient blue component.
【００１８】本発明によるＳｒ2 Ｇａ2 Ｓ5 ：Ｃｅ発光
層２４、特開平８−１６２２７３号公報によるＳｒ2 Ｇ
ａ2 Ｓ5 ：Ｃｅ発光層２５、ＳｒＳ：Ｃｅ発光層２６そ
れぞれの色度座標を示した色度図を図６に示す。本発明
によるＳｒ2 Ｇａ2 Ｓ5 ：Ｃｅ発光層は（ｘ，ｙ）＝
（０．１５，０．１２）付近に位置し、ＣＲＴ蛍光体と
同じ色純度の優れた青色発光であり、ディスプレイに使
用した場合色再現が広くなる。The Sr 2 Ga 2 S 5 : Ce light emitting layer 24 according to the present invention, Sr 2 G according to Japanese Patent Application Laid-Open No. 8-162273.
FIG. 6 is a chromaticity diagram showing chromaticity coordinates of each of the a 2 S 5 : Ce light emitting layer 25 and the SrS: Ce light emitting layer 26. The Sr 2 Ga 2 S 5 : Ce light emitting layer according to the present invention has (x, y) =
It is located near (0.15, 0.12), emits blue light with the same color purity as the CRT phosphor, and has a wide color reproduction when used for a display.
【００１９】以上本発明一実施例の構成とそれが諸特性
について従来技術と比較して説明してきたが、本発明は
この実施例に限定されることなく、発明の要旨内で各種
の変形変更の可能なことは当業者に自明であろう。Although the configuration of the embodiment of the present invention and the characteristics thereof have been described in comparison with the prior art, the present invention is not limited to this embodiment and various modifications and changes are possible within the scope of the invention. It will be obvious to those skilled in the art what is possible.
【００２０】[0020]
【発明の効果】本発明によれば高輝度で純粋な青色発光
を有し、薄膜ＥＬディスプレイでフルカラー表示に適す
る青色発光用薄膜ＥＬ素子が提供できる。According to the present invention, there can be provided a thin-film EL device for blue light emission which has high luminance and emits pure blue light and is suitable for full-color display in a thin-film EL display.
【図１】本発明一実施例薄膜ＥＬ素子の断面図。FIG. 1 is a sectional view of a thin film EL device according to an embodiment of the present invention.
【図２】本発明によるＳｒ2 Ｇａ2 Ｓ5 ：Ｃｅ発光層と
その下に配設されたＳｒＳ薄膜のＸ線回折パターン。FIG. 2 is an X-ray diffraction pattern of a Sr 2 Ga 2 S 5 : Ce light emitting layer according to the present invention and a SrS thin film disposed thereunder.
【図３】本発明による（００４）単一配向Ｓｒ2 Ｇａ2
Ｓ5 ：Ｃｅ発光層（ｂ）とＳｒＳ薄膜（ａ）との格子位
置を表す結晶構造図。FIG. 3 shows a (004) unidirectionally oriented Sr 2 Ga 2 according to the present invention.
S 5 : Crystal structure diagram showing lattice positions of Ce light emitting layer (b) and SrS thin film (a).
【図４】本発明によるＳｒＳ薄膜を配設した薄膜ＥＬ素
子（２１）と配設しない薄膜ＥＬ素子（２２）の輝度−
印加電圧特性を示すグラフ。FIG. 4 shows luminance of a thin film EL element (21) provided with an SrS thin film according to the present invention and a thin film EL element (22) not provided.
4 is a graph showing applied voltage characteristics.
【図５】本発明によるＳｒ2 Ｇａ2 Ｓ5 ：Ｃｅ発光層の
発光スペクトル（４４３ｎｍ付近に第１ピーク２３を有
する）。FIG. 5 is an emission spectrum of the Sr 2 Ga 2 S 5 : Ce light emitting layer according to the present invention (having a first peak 23 near 443 nm).
【図６】本発明によるＳｒ2 Ｇａ2 Ｓ5 ：Ｃｅ発光層
（２４）、特開平８−１６２２７３号公報によるＳｒ2
Ｇａ2 Ｓ5 ：Ｃｅ発光層（２５）および同ＳｒＳ：Ｃｅ
発光層（２６）それぞれの色度座標を示した色度図。[6] The present invention according to Sr 2 Ga 2 S 5: Ce luminescent layer (24), Sr by JP-8-162273 Patent Publication 2
Ga 2 S 5 : Ce light emitting layer (25) and SrS: Ce
The chromaticity diagram which showed the chromaticity coordinates of each light emitting layer (26).
【符号の説明】 １ ガラス基板 ２ 透明電極 ３，８ 複合絶縁層 ４，６ ＳｒＳ薄膜 ５ 発光層 ７ 複合薄膜 ９ 上部電極[Description of Signs] 1 Glass substrate 2 Transparent electrode 3,8 Composite insulating layer 4,6 SrS thin film 5 Light emitting layer 7 Composite thin film 9 Upper electrode
フロントページの続き (72)発明者 岡本 信治 東京都世田谷区砧１丁目10番11号 日本放 送協会 放送技術研究所内 (72)発明者 和泉 佳孝 東京都世田谷区砧１丁目10番11号 日本放 送協会 放送技術研究所内 Ｆターム(参考） 3K007 AB02 AB04 CA01 CB01 CC00 DA02 DA05 DB01 DC04 DC05 EC00 EC03 EC04 FA01 FA03 GA00 4H001 XA16 XA31 XA38 YA58 Continuing from the front page (72) Inventor Shinji Okamoto 1-10-11 Kinuta, Setagaya-ku, Tokyo Japan Broadcasting Corporation Japan Broadcasting Research Institute (72) Inventor Yoshitaka Izumi 1-10-11 Kinuta, Setagaya-ku, Tokyo Japan 3K007 AB02 AB04 CA01 CB01 CC00 DA02 DA05 DB01 DC04 DC05 EC00 EC03 EC04 FA01 FA03 GA00 4H001 XA16 XA31 XA38 YA58
Claims (3)
極間に、発光層としてのＣｅを付活したＳｒ2 Ｇａ2 Ｓ
5 薄膜とこれと接するようＳｒ2 Ｇａ2 Ｓ5薄膜の少な
くとも基板側に接合されたＳｒＳ薄膜とが配設されると
ともに、これら配設された複合薄膜と前記１対の電極の
それぞれとの間にさらに絶縁層がそれぞれ配設されたこ
とを特徴とする薄膜ＥＬ素子。1. An Sr 2 Ga 2 S activated Ce as a light emitting layer between a pair of electrodes, one of which has translucency.
5 thin film and an SrS thin film joined to at least the substrate side of the Sr 2 Ga 2 S 5 thin film so as to be in contact with the thin film and between the composite thin film provided and each of the pair of electrodes. A thin-film EL device further comprising an insulating layer.
光層が〔１００〕軸方向に配向されたＳｒＳ薄膜上に
〔００１〕軸方向に配向されて接合されることを特徴と
する請求項１記載の薄膜ＥＬ素子。Wherein characterized in that it is the Ce Sr 2 Ga 2 S 5-emitting layer activated by the [100] on SrS thin film oriented in the axial direction [001] is aligned axially joined The thin film EL device according to claim 1.
ク発光波長を有し、前記発光層の発光色がＣＩＥ色度座
標上０．１≦ｘ≦０．２、０．０５≦ｙ≦０．２の青色
領域に位置することを特徴とする請求項１または２記載
の薄膜ＥＬ素子。3. The light-emitting layer has a first peak emission wavelength at 480 nm or less, and the light-emitting layer emits light of a color on a CIE chromaticity coordinate of 0.1 ≦ x ≦ 0.2, 0.05 ≦ y ≦ 0. 3. The thin-film EL device according to claim 1, wherein the thin-film EL device is located in a blue region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16983498A JP3976892B2 (en) | 1998-06-17 | 1998-06-17 | Thin film EL device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16983498A JP3976892B2 (en) | 1998-06-17 | 1998-06-17 | Thin film EL device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000012231A true JP2000012231A (en) | 2000-01-14 |
| JP3976892B2 JP3976892B2 (en) | 2007-09-19 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003526885A (en) * | 2000-03-16 | 2003-09-09 | プレイナー システムス インコーポレーテッド | Light emitting luminescent material |
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1998
- 1998-06-17 JP JP16983498A patent/JP3976892B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003526885A (en) * | 2000-03-16 | 2003-09-09 | プレイナー システムス インコーポレーテッド | Light emitting luminescent material |
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| Publication number | Publication date |
|---|---|
| JP3976892B2 (en) | 2007-09-19 |
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