JP2000012229A - Organic electroluminescent element material and organic electroluminescent element using same - Google Patents

Organic electroluminescent element material and organic electroluminescent element using same

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Publication number
JP2000012229A
JP2000012229A JP10181772A JP18177298A JP2000012229A JP 2000012229 A JP2000012229 A JP 2000012229A JP 10181772 A JP10181772 A JP 10181772A JP 18177298 A JP18177298 A JP 18177298A JP 2000012229 A JP2000012229 A JP 2000012229A
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JP
Japan
Prior art keywords
group
organic electroluminescent
light emitting
organic
emitting layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10181772A
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Japanese (ja)
Other versions
JP3915256B2 (en
Inventor
Shinichiro Maki
伸一郎 真木
Shunichi Onikubo
俊一 鬼久保
Michiko Tamano
美智子 玉野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyo Ink Mfg Co Ltd
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Toyo Ink Mfg Co Ltd
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Priority to JP18177298A priority Critical patent/JP3915256B2/en
Publication of JP2000012229A publication Critical patent/JP2000012229A/en
Application granted granted Critical
Publication of JP3915256B2 publication Critical patent/JP3915256B2/en
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Expired - Lifetime legal-status Critical Current

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Abstract

PROBLEM TO BE SOLVED: To provide a reliable organic electroluminescent element material and an organic electroluminescent element having high luminance and high luminous efficiency, and lowering degradation of the luminescence. SOLUTION: This organic electroluminescent element material is represented by the general formula, and it is used for the organic electroluminescent element. In the formula, Ar1 and Ar2 each is a substituted or nonsubstituted aryl group, and Ar3 is a substituted or nonsubstituted arylene group. Then, (n) is an integer of 1-10.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は平面光源や表示に使用さ
れる有機エレクトロルミネッセンス(EL)素子に関す
るものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic electroluminescence (EL) device used for a flat light source and a display.

【0002】[0002]

【従来の技術】有機物質を使用したEL素子は、固体発
光型の安価な大面積フルカラー表示素子としての用途が
有望視され、多くの開発が行われている。一般にEL
は、発光層および該層をはさんだ一対の対向電極から構
成されている。発光は、両電極間に電界が印加される
と、陰極側から電子が注入され、陽極側から正孔が注入
される。さらに、この電子が発光層において正孔と再結
合し、エネルギー準位が伝導帯から価電子帯に戻る際に
エネルギーを光として放出する現象である。
2. Description of the Related Art An EL device using an organic substance is expected to be used as an inexpensive, large-area, full-color display device of a solid light emitting type, and many developments have been made. Generally EL
Is composed of a light-emitting layer and a pair of opposed electrodes sandwiching the layer. In light emission, when an electric field is applied between both electrodes, electrons are injected from the cathode side and holes are injected from the anode side. Further, the electrons are recombined with holes in the light emitting layer, and energy is emitted as light when the energy level returns from the conduction band to the valence band.

【0003】従来の有機EL素子は、無機EL素子に比
べて駆動電圧が高く、発光輝度や発光効率も低かった。
また、特性劣化も著しく実用化には至っていなかった。
近年、10V以下の低電圧で発光する高い蛍光量子効率
を持った有機化合物を含有した薄膜を積層した有機EL
素子が報告され、関心を集めている(アプライド・フィ
ジクス・レターズ、51巻、913ページ、1987年
参照)。この方法では、金属キレート錯体を蛍光体層、
アミン系化合物を正孔注入層に使用して、高輝度の緑色
発光を得ており、6〜7Vの直流電圧で輝度は100c
d/m2、最大発光効率は1.5lm/Wを達成して、
実用領域に近い性能を持っている。しかしながら、現在
までの有機EL素子は、構成の改善により発光強度は改
良されているが、未だ充分な発光輝度は有していない。
また、繰り返し使用時の安定性に劣るという大きな問題
を持っている。
[0003] Conventional organic EL devices have a higher driving voltage and lower luminous brightness and luminous efficiency than inorganic EL devices.
In addition, the characteristic deterioration was remarkable, and it had not been put to practical use.
2. Description of the Related Art In recent years, an organic EL in which a thin film containing an organic compound having high fluorescence quantum efficiency that emits light at a low voltage of 10 V or less is laminated.
Devices have been reported and are of interest (see Applied Physics Letters, 51, 913, 1987). In this method, the metal chelate complex is converted into a phosphor layer,
High brightness green light emission is obtained by using an amine compound for the hole injection layer, and the brightness is 100 c at a DC voltage of 6 to 7 V.
d / m 2 and maximum luminous efficiency of 1.5 lm / W,
Has performance close to the practical range. However, organic EL devices up to now have improved light emission intensity due to the improved structure, but do not yet have sufficient light emission luminance.
In addition, there is a major problem that the stability upon repeated use is poor.

【0004】[0004]

【発明が解決しようとする課題】本発明の目的は、発光
効率が高く、繰り返し使用時での安定性の優れた有機E
L素子の提供にある。本発明者らが鋭意検討した結果、
一般式[1]で示される化合物の有機EL素子材料を少
なくとも一層に使用した有機EL素子の発光効率が高
く、繰り返し使用時での安定性も優れていることを見い
だし本発明に至った。
SUMMARY OF THE INVENTION It is an object of the present invention to provide an organic compound having high luminous efficiency and excellent stability when used repeatedly.
L element. As a result of intensive studies by the present inventors,
The present invention has been found that the organic EL device using at least one layer of the organic EL device material of the compound represented by the general formula [1] has high luminous efficiency and excellent stability upon repeated use.

【0005】[0005]

【課題を解決するための手段】即ち、本発明は、下記一
般式[1]で示される有機エレクトロルミネッセンス素
子材料に関する。 一般式[1]
That is, the present invention relates to an organic electroluminescent device material represented by the following general formula [1]. General formula [1]

【0006】[0006]

【化2】 Embedded image

【0007】[ただし、式中 Ar1およびAr2は置換
もしくは未置換のアリール基を表し、Ar3は置換もし
くは未置換のアリーレン基を表す。また、nは1から1
0までの整数を表す。] また、本発明はnが1から4までの整数である上記有機
エレクトロルミネッセンス素子材料に関する。
[Wherein, Ar 1 and Ar 2 represent a substituted or unsubstituted aryl group, and Ar 3 represents a substituted or unsubstituted arylene group. N is 1 to 1
Represents an integer up to 0. Further, the present invention relates to the above organic electroluminescent device material, wherein n is an integer of 1 to 4.

【0008】また、本発明は一対の電極間に発光層を含
む複数層の有機化合物薄膜を形成した有機エレクトロル
ミネッセンス素子において、少なくとも一層が上記有機
エレクトロルミネッセンス素子材料を含有する層である
有機エレクトロルミネッセンス素子に関する。また、本
発明は一対の電極間に発光層を含む複数層の有機化合物
薄膜を形成した有機エレクトロルミネッセンス素子にお
いて、発光層が上記有機エレクトロルミネッセンス素子
材料を含有する層である有機エレクトロルミネッセンス
素子に関する。
The present invention also relates to an organic electroluminescent device having a plurality of organic compound thin films including a light emitting layer formed between a pair of electrodes, wherein at least one layer is a layer containing the organic electroluminescent device material. Related to the element. In addition, the present invention relates to an organic electroluminescent device in which a plurality of organic compound thin films including a light emitting layer are formed between a pair of electrodes, wherein the light emitting layer is a layer containing the organic electroluminescent device material.

【0009】また、本発明は一対の電極間に発光層を含
む複数層の有機化合物薄膜を形成した有機エレクトロル
ミネッセンス素子において、発光層と陽極との間の正孔
注入帯域中の少なくとも一層が上記有機エレクトロルミ
ネッセンス素子材料を含有する層である有機エレクトロ
ルミネッセンス素子に関する。である。
Further, the present invention relates to an organic electroluminescence device in which a plurality of organic compound thin films including a light emitting layer are formed between a pair of electrodes, wherein at least one of the holes in the hole injection zone between the light emitting layer and the anode is as described above. The present invention relates to an organic electroluminescence device which is a layer containing a material for an organic electroluminescence device. It is.

【0010】[0010]

【発明実施の形態】DETAILED DESCRIPTION OF THE INVENTION

【0011】本発明の一般式[1]で表される化合物の
Ar1およびAr2は、置換もしくは未置換のアリール基
を表す。置換もしくは未置換のアリール基としては、フ
ェニル基、4−エチルフェニル基、ビフェニル基、4−
メチルビフェニル基、4−シクロヘキシルビフェニル
基、ターフェニル基、クオーターフェニル基、4−クロ
ロフェニル基、3−ニトロフェニル基、4−シアノフェ
ニル基、4−メトキシフェニル基、3−メチルチオフェ
ニル基、3,5−ジシアノフェニル基、4−トリフルオ
ロメトキシフェニル基、o−,m−,およびp−トリル
基、キシリル基、o−,m−,およびp−クメニル基、
メシチル基、4−フェノキシフェニル基、4−(α,α
−ジメチルベンジル)フェニル基、4−(N,N−ジメ
チル)アミノフェニル基、4−(N,N−ジフェニル)
アミノフェニル基、ペンタレニル基、インデニル基、ナ
フチル基、5−メチルナフチル基、アズレニル基、ヘプ
タレニル基、アセナフチレニル基、フェナレニル基、フ
ルオレニル基、アントリル基、アントラキノリル基、3
−メチルアントリル基、フェナントリル基、トリフェニ
レン基、ピレニル基、クリセニル基、2−エチル−1−
クリセニル基、ピセニル基、ペリレニル基、6−クロロ
ペリレニル基、ペンタフェニル基、ペンタセニル基、テ
トラフェニレニル基、ヘキサフェニル基、ヘキサセニル
基、ルビセニル基、コロネニル基、トリナフチレニル
基、ヘプタフェニル基、ヘプタセニル基、ピラントレニ
ル基、オバレニル基等がある。
Ar 1 and Ar 2 in the compound represented by the general formula [1] of the present invention represent a substituted or unsubstituted aryl group. Examples of the substituted or unsubstituted aryl group include a phenyl group, a 4-ethylphenyl group, a biphenyl group,
Methylbiphenyl group, 4-cyclohexylbiphenyl group, terphenyl group, quarterphenyl group, 4-chlorophenyl group, 3-nitrophenyl group, 4-cyanophenyl group, 4-methoxyphenyl group, 3-methylthiophenyl group, 3,5 -Dicyanophenyl, 4-trifluoromethoxyphenyl, o-, m-, and p-tolyl, xylyl, o-, m-, and p-cumenyl;
Mesityl group, 4-phenoxyphenyl group, 4- (α, α
-Dimethylbenzyl) phenyl group, 4- (N, N-dimethyl) aminophenyl group, 4- (N, N-diphenyl)
Aminophenyl group, pentalenyl group, indenyl group, naphthyl group, 5-methylnaphthyl group, azulenyl group, heptalenyl group, acenaphthylenyl group, phenalenyl group, fluorenyl group, anthryl group, anthraquinolyl group, 3
-Methylanthryl group, phenanthryl group, triphenylene group, pyrenyl group, chrysenyl group, 2-ethyl-1-
Chrysenyl group, picenyl group, perylenyl group, 6-chloroperylenyl group, pentaphenyl group, pentacenyl group, tetraphenylenyl group, hexaphenyl group, hexacenyl group, rubicenyl group, colonenyl group, trinaphthenyl group, heptaphenyl group, heptaenyl group, Examples include a pyranthrenyl group and an ovalenyl group.

【0012】また、本発明の一般式[1]で表される化
合物のAr3は、置換もしくは未置換のアリーレン基を
表す。アリーレン基の具体例としては、Ar1およびA
2の説明で例示したアリール基に対応するアリーレン
基が挙げられる。原料の入手しやすさの点では、フェニ
レン基、ナフタレン基が好ましい。
Ar 3 in the compound represented by the general formula [1] of the present invention represents a substituted or unsubstituted arylene group. Specific examples of the arylene group include Ar 1 and A
arylene groups corresponding to an aryl group exemplified in the description of r 2 and the like. A phenylene group and a naphthalene group are preferred in terms of availability of raw materials.

【0013】本発明の一般式[1]のnは1から10ま
での整数であるが、好ましくは1から4、更に好ましく
は2から4までの整数である。
In the general formula [1] of the present invention, n is an integer from 1 to 10, preferably from 1 to 4, more preferably from 2 to 4.

【0014】一般式[1]で表される化合物のフェナン
トレン環、Ar1、Ar2およびAr 3上の水素原子は、
他の置換基に置換されても構わない。置換基の種類とし
ては、ハロゲン原子、シアノ基、ニトロ基、置換もしく
は未置換のアルキル基、置換もしくは未置換のアルコキ
シ基、置換もしくは未置換のアルキルチオ基、置換もし
くは未置換のアミノ基、置換もしくは未置換のアルキル
アミノ基がある。
Phenane of the compound represented by the general formula [1]
Tren ring, Ar1, ArTwoAnd Ar ThreeThe above hydrogen atom is
It may be substituted by another substituent. Substituent type
The halogen atom, cyano group, nitro group,
Is an unsubstituted alkyl group, substituted or unsubstituted alkoxy
A substituted or unsubstituted alkylthio group,
Or unsubstituted amino group, substituted or unsubstituted alkyl
There is an amino group.

【0015】本発明において、一般式[1]で表される
化合物は、例えば次のような方法で合成することが出来
る。ニトロベンゼン溶媒中、ビス(ブロモアリール)フ
ェナントレンと芳香族ジアミン化合物を、炭酸カリウ
ム、銅等の触媒と共に200℃で50時間反応させるこ
とで得られる。
In the present invention, the compound represented by the general formula [1] can be synthesized, for example, by the following method. It is obtained by reacting bis (bromoaryl) phenanthrene with an aromatic diamine compound in a nitrobenzene solvent at 200 ° C. for 50 hours together with a catalyst such as potassium carbonate or copper.

【0016】本発明の化合物の代表例を表1に具体的に
例示するが、本発明は以下の代表例に限定されるもので
はない。
The typical examples of the compounds of the present invention are specifically shown in Table 1, but the present invention is not limited to the following typical examples.

【0017】[0017]

【表1】 [Table 1]

【0018】 [0018]

【0019】 [0019]

【0020】 [0020]

【0021】 [0021]

【0022】 [0022]

【0023】 [0023]

【0024】 [0024]

【0025】 [0025]

【0026】 [0026]

【0027】 [0027]

【0028】 [0028]

【0029】有機EL素子は、陽極と陰極間に一層もし
くは多層の有機化合物薄膜を形成した素子である。一層
型の場合、陽極と陰極との間に発光層を設けている。発
光層は、発光材料を含有し、それに加えて陽極から注入
した正孔もしくは陰極から注入した電子を発光材料まで
輸送させるために正孔注入材料、正孔輸送材料もしくは
電子注入材料、電子輸送材料を含有しても良い。電子注
入材料とは陰極から電子を注入されうる能力を持つ材料
であり、電子輸送材料とは注入された電子を発光層へ輸
送する能力を持つ材料である。正孔注入材料とは、陽極
から正孔を注入されうる能力を持つ材料であり、正孔輸
送材料とは、注入された正孔を発光層へ輸送する能力を
持つ材料である。
An organic EL device is a device in which a single or multilayer organic compound thin film is formed between an anode and a cathode. In the case of a single layer type, a light emitting layer is provided between an anode and a cathode. The light-emitting layer contains a light-emitting material, and additionally has a hole-injection material, a hole-transport material or an electron-injection material, and an electron-transport material for transporting holes injected from an anode or electrons injected from a cathode to the light-emitting material. May be contained. The electron injection material is a material capable of injecting electrons from the cathode, and the electron transport material is a material capable of transporting the injected electrons to the light emitting layer. The hole injection material is a material capable of injecting holes from the anode, and the hole transport material is a material capable of transporting the injected holes to the light emitting layer.

【0030】多層型は、(陽極/正孔注入帯域/発光層
/陰極)、(陽極/発光層/電子注入帯域/陰極)、
(陽極/正孔注入帯域/発光層/電子注入帯域/陰極)
の多層構成で積層した有機EL素子がある。
The multilayer type includes (anode / hole injection zone / light-emitting layer / cathode), (anode / light-emitting layer / electron injection zone / cathode),
(Anode / Hole injection zone / Emitting layer / Electron injection zone / Cathode)
There is an organic EL element stacked in a multilayer structure of the above.

【0031】本発明の一般式[1]で示される化合物
は、固体状態において強い蛍光を持つ化合物であり、電
界発光性に優れているので、発光材料として発光層内で
使用することができる。また、一般式[1]の化合物
は、発光層内においてドーピング材料として発光層中に
て最適の割合でドーピングすることにより、高い発光効
率および発光波長の最適な選択が可能である。更に、一
般式[1]の化合物は、正孔もしくは電子等のキャリア
を輸送することが出来るが、正孔輸送性がより優れてい
るので、正孔注入層として使用することが出来る。正孔
注入帯域が二層以上で構成される場合、いずれの正孔注
入層にも使用することが出来る。
The compound represented by the general formula [1] of the present invention is a compound having strong fluorescence in a solid state and has excellent electroluminescence properties, so that it can be used in a light emitting layer as a light emitting material. Further, by doping the compound of the general formula [1] as a doping material in the light emitting layer at an optimum ratio in the light emitting layer, it is possible to select a high light emitting efficiency and an optimum light emitting wavelength. Further, the compound of the general formula [1] can transport carriers such as holes or electrons, but can be used as a hole injecting layer because it has better hole transportability. When the hole injection zone is composed of two or more layers, it can be used for any hole injection layer.

【0032】発光層のホスト材料に、ドーピング材料
(ゲスト材料)として一般式[1]の化合物を使用し
て、発光輝度が高い有機EL素子を得ることもできる。
一般式[1]の化合物は、発光層内において、ホスト材
料に対して0.001重量%〜50重量%の範囲で含有
されていることが望ましく、更には0.01重量%〜1
0重量%の範囲が効果的である。
By using a compound of the general formula [1] as a doping material (guest material) as a host material of the light emitting layer, an organic EL device having high emission luminance can be obtained.
The compound of the general formula [1] is desirably contained in the light emitting layer in a range of 0.001% by weight to 50% by weight relative to the host material, and more preferably 0.01% by weight to 1% by weight.
A range of 0% by weight is effective.

【0033】一般式[1]の化合物と併せて使用できる
ホスト材料としては、キノリン金属錯体、オキサジアゾ
ール、ベンゾチアゾール金属錯体、ベンゾオキサゾール
金属錯体、ベンゾイミダゾール金属錯体、トリアゾー
ル、イミダゾール、オキサゾール、オキサジアゾール、
スチルベン、ブタジエン、ベンジジン型トリフェニルア
ミン、スチリルアミン型トリフェニルアミン、ジアミン
型トリフェニルアミンフルオレノン、ジアミノアントラ
セン型トリフェニルアミン、ジアミノフェナントレン型
トリフェニルアミン、アントラキノジメタン、ジフェノ
キノン、チアジアゾール、テトラゾール、ペリレンテト
ラカルボン酸、フレオレニリデンメタン、アントラキノ
ジメタン、トリフェニレン、アントロン等とそれらの誘
導体、および、ポリビニルカルバゾール、ポリシラン等
の導電性高分子の高分子材料等がある。
Examples of the host material usable in combination with the compound of the general formula [1] include a quinoline metal complex, oxadiazole, benzothiazole metal complex, benzoxazole metal complex, benzimidazole metal complex, triazole, imidazole, oxazole, oxazole Diazole,
Stilbene, butadiene, benzidine triphenylamine, styrylamine triphenylamine, diamine triphenylamine fluorenone, diaminoanthracene triphenylamine, diaminophenanthrene triphenylamine, anthraquinodimethane, diphenoquinone, thiadiazole, tetrazole, perylene Examples include tetracarboxylic acid, fluorenylidenemethane, anthraquinodimethane, triphenylene, anthrone, and derivatives thereof, and conductive polymer materials such as polyvinylcarbazole and polysilane.

【0034】逆に、一般式[1]の化合物をホスト材料
として、他のドーピング材料を使用して発光色を変化さ
せることも可能である。一般式[1]と共に使用される
ドーピング材料としては、アントラセン、ナフタレン、
フェナントレン、ピレン、テトラセン、コロネン、クリ
セン、フルオレセイン、ペリレン、フタロペリレン、ナ
フタロペリレン、ペリノン、フタロペリノン、ナフタロ
ペリノン、ジフェニルブタジエン、テトラフェニルブタ
ジエン、クマリン、オキサジアゾール、アルダジン、ビ
スベンゾキサゾリン、ビススチリル、ピラジン、シクロ
ペンタジエン、キノリン金属錯体、アミノキノリン金属
錯体、イミン、ジフェニルエチレン、ビニルアントラセ
ン、ジアミノカルバゾール、ピラン、チオピラン、ポリ
メチン、メロシアニン、イミダゾールキレート化オキシ
ノイド化合物、キナクリドン、ルブレン等およびそれら
の誘導体があるが、これらに限定されるものではない。
Conversely, it is also possible to change the luminescent color by using the compound of the general formula [1] as a host material and using another doping material. Doping materials used with the general formula [1] include anthracene, naphthalene,
Phenanthrene, pyrene, tetracene, coronene, chrysene, fluorescein, perylene, phthaloperylene, naphthaloperylene, perinone, phthaloperinone, naphthaloperinone, diphenylbutadiene, tetraphenylbutadiene, coumarin, oxadiazole, aldazine, bisbenzoxazoline, bisstyryl, pyrazine, cyclopentadiene , Quinoline metal complexes, aminoquinoline metal complexes, imines, diphenylethylene, vinylanthracene, diaminocarbazole, pyran, thiopyran, polymethine, merocyanine, imidazole chelated oxinoid compounds, quinacridone, rubrene and the like, and derivatives thereof, but are not limited thereto. It is not something to be done.

【0035】発光層には、発光材料およびドーピング材
料に加えて、必要があれば正孔注入材料や電子注入材料
を使用することもできる。
In the light emitting layer, a hole injection material or an electron injection material can be used if necessary, in addition to the light emitting material and the doping material.

【0036】有機EL素子は、多層構造にすることによ
り、クエンチングによる輝度や寿命の低下を防ぐことが
できる。また、必要があれば、発光材料、ドーピング材
料、キャリア注入を行う正孔注入材料や電子注入材料を
二種類以上組み合わせて使用することも出来る。また、
正孔注入層、発光層、電子注入層は、それぞれ二層以上
の層構成により形成されても良く、正孔もしくは電子が
効率よく電極から注入され、層中で輸送される素子構造
が選択される。
The organic EL element has a multi-layer structure, so that a decrease in luminance and life due to quenching can be prevented. If necessary, a combination of two or more kinds of light emitting materials, doping materials, hole injecting materials for injecting carriers, and electron injecting materials can also be used. Also,
The hole injection layer, the light-emitting layer, and the electron injection layer may each be formed in a layer structure of two or more layers, and an element structure in which holes or electrons are efficiently injected from the electrode and transported in the layer is selected. You.

【0037】有機EL素子の陽極に使用される導電性材
料は、4eVより大きな仕事関数を持つものが好適であ
り、炭素、アルミニウム、バナジウム、鉄、コバルト、
ニッケル、タングステン、銀、金、白金、パラジウム等
およびそれらの合金、ITO基板、NESA基板と称さ
れる酸化スズ、酸化インジウム等の酸化金属、さらには
ポリチオフェンやポリピロール等の有機導電性樹脂が用
いられる。陰極に使用される導電性材料は、4eVより
小さな仕事関数を持つものが好適であり、マグネシウ
ム、カルシウム、錫、鉛、チタニウム、イットリウム、
リチウム、ルテニウム、マンガン等およびそれらの合金
が用いられる。合金としては、マグネシウム/銀、マグ
ネシウム/インジウム、リチウム/アルミニウム等が代
表例として挙げられるが、これらに限定されるものでは
ない。合金の比率は、加熱の温度、雰囲気、真空度によ
り制御され適切な比率が選択される。陽極および陰極
は、必要があれば二層以上の層構成により形成されてい
ても良い。
The conductive material used for the anode of the organic EL device preferably has a work function of more than 4 eV, and includes carbon, aluminum, vanadium, iron, cobalt,
Nickel, tungsten, silver, gold, platinum, palladium and the like and alloys thereof, ITO substrate, metal oxide such as tin oxide and indium oxide called NESA substrate, and organic conductive resin such as polythiophene and polypyrrole are used. . The conductive material used for the cathode is preferably one having a work function of less than 4 eV, such as magnesium, calcium, tin, lead, titanium, yttrium,
Lithium, ruthenium, manganese and the like and alloys thereof are used. Representative examples of the alloy include magnesium / silver, magnesium / indium, and lithium / aluminum, but are not limited thereto. The ratio of the alloy is controlled by the heating temperature, atmosphere, and degree of vacuum, and an appropriate ratio is selected. The anode and the cathode may be formed by two or more layers if necessary.

【0038】有機EL素子では、効率良く発光させるた
めに、少なくとも一方は素子の発光波長領域において充
分透明であることが望ましい。また、基板も透明である
ことが望ましい。透明電極は、上記の導電性材料を使用
して、蒸着やスパッタリング等の方法で所定の透光性を
確保するように設定する。発光面の電極は、光透過率を
10%以上にすることが望ましい。基板は、機械的、熱
的強度を有し、透明であれば限定されるものではない
が、例示すると、ガラス基板、ポリエチレン板、ポリエ
ーテルサルフォン板、ポリプロピレン板等の透明性樹脂
があげられる。
In the organic EL device, at least one of them is desirably sufficiently transparent in the emission wavelength region of the device in order to emit light efficiently. Further, it is desirable that the substrate is also transparent. The transparent electrode is set so as to secure a predetermined translucency by a method such as vapor deposition or sputtering using the above conductive material. The electrode on the light emitting surface desirably has a light transmittance of 10% or more. The substrate is not limited as long as it has mechanical and thermal strength and is transparent, but examples thereof include a transparent resin such as a glass substrate, a polyethylene plate, a polyether sulfone plate, and a polypropylene plate. .

【0039】本発明に係わる有機EL素子の各層の形成
は、真空蒸着、スパッタリング等の乾式成膜法やスピン
コーティング、ディッピング等の湿式成膜法のいずれの
方法を適用することができる。膜厚は特に限定されるも
のではないが、各層は適切な膜厚に設定する必要があ
る。膜厚が厚すぎると、一定の光出力を得るために大き
な印加電圧が必要になり効率が悪くなる。膜厚が薄すぎ
るとピンホール等が発生して、電界を印加しても充分な
発光輝度が得られない。通常の膜厚は5nmから10μ
mの範囲が適しているが、10nmから0.2μmの範
囲がさらに好ましい。
Each layer of the organic EL device according to the present invention can be formed by any of a dry film forming method such as vacuum evaporation and sputtering and a wet film forming method such as spin coating and dipping. The thickness is not particularly limited, but each layer needs to be set to an appropriate thickness. If the film thickness is too large, a large applied voltage is required to obtain a constant light output, resulting in poor efficiency. If the film thickness is too small, pinholes and the like are generated, and sufficient light emission luminance cannot be obtained even when an electric field is applied. Normal thickness is 5nm to 10μ
The range of m is suitable, but the range of 10 nm to 0.2 μm is more preferable.

【0040】湿式成膜法の場合、各層を形成する材料
を、クロロホルム、テトラヒドロフラン、ジオキサン等
の適切な溶媒に溶解または分散して有機化合物薄膜を形
成するが、その溶媒はいずれであっても良い。また、い
ずれの薄膜においても、成膜性向上、膜のピンホール防
止等のため適切な樹脂や添加剤を使用しても良い。この
ような樹脂としては、ポリスチレン、ポリカーボネー
ト、ポリアリレート、ポリエステル、ポリアミド、ポリ
ウレタン、ポリスルフォン、ポリメチルメタクリレー
ト、ポリメチルアクリレート、セルロース等の絶縁性樹
脂、ポリ−N−ビニルカルバゾール、ポリシラン等の光
導電性樹脂、ポリチオフェン、ポリピロール等の導電性
樹脂を挙げることができる。また、添加剤としては、酸
化防止剤、紫外線吸収剤、可塑剤等を挙げることができ
る。
In the case of the wet film forming method, a material for forming each layer is dissolved or dispersed in an appropriate solvent such as chloroform, tetrahydrofuran, dioxane or the like to form an organic compound thin film, but any solvent may be used. . In any of the thin films, a suitable resin or additive may be used to improve film forming properties, prevent pinholes in the film, and the like. Examples of such a resin include insulating resins such as polystyrene, polycarbonate, polyarylate, polyester, polyamide, polyurethane, polysulfone, polymethyl methacrylate, polymethyl acrylate, and cellulose; and photoconductive materials such as poly-N-vinyl carbazole and polysilane. And conductive resins such as polythiophene and polypyrrole. Examples of the additive include an antioxidant, an ultraviolet absorber, and a plasticizer.

【0041】正孔注入材料としては、正孔を注入する能
力を持ち、発光層または発光材料に対して優れた正孔注
入効果を有し、発光層で生成した励起子の電子注入層ま
たは電子注入材料への移動を防止し、かつ薄膜形成能の
優れた化合物が挙げられる。具体的には、フタロシアニ
ン系化合物、ナフタロシアニン系化合物、ポルフィリン
系化合物、オキサジアゾール、トリアゾール、イミダゾ
ール、イミダゾロン、イミダゾールチオン、ピラゾリ
ン、ピラゾロン、テトラヒドロイミダゾール、オキサゾ
ール、オキサジアゾール、ヒドラゾン、アシルヒドラゾ
ン、ポリアリールアルカン、スチルベン、ブタジエン、
ベンジジン型トリフェニルアミン、スチリルアミン型ト
リフェニルアミン、ジアミン型トリフェニルアミン等
と、それらの誘導体、およびポリビニルカルバゾール、
ポリシラン、導電性高分子等の高分子材料等があるが、
これらに限定されるものではない。
The hole injecting material has the ability to inject holes, has an excellent hole injecting effect on the light emitting layer or the light emitting material, and has an electron injecting layer or electron of excitons generated in the light emitting layer. Compounds that prevent migration to the injection material and have excellent thin film forming ability are mentioned. Specifically, phthalocyanine compounds, naphthalocyanine compounds, porphyrin compounds, oxadiazole, triazole, imidazole, imidazolone, imidazolethione, pyrazoline, pyrazolone, tetrahydroimidazole, oxazole, oxadiazole, hydrazone, acylhydrazone, poly Arylalkane, stilbene, butadiene,
Benzidine-type triphenylamine, styrylamine-type triphenylamine, diamine-type triphenylamine and the like, and derivatives thereof, and polyvinyl carbazole,
Although there are polymer materials such as polysilane and conductive polymer,
It is not limited to these.

【0042】電子注入材料としては、電子を注入する能
力を持ち、発光層または発光材料に対して優れた電子注
入効果を有し、発光層で生成した励起子の正孔注入層ま
たは正孔注入材料への移動を防止し、かつ薄膜形成能の
優れた化合物が挙げられる。例えば、キノリン金属錯
体、オキサジアゾール、ベンゾチアゾール金属錯体、ベ
ンゾオキサゾール金属錯体、ベンゾイミダゾール金属錯
体、フルオレノン、アントラキノジメタン、ジフェノキ
ノン、チオピランジオキシド、オキサジアゾール、チア
ジアゾール、テトラゾール、ペリレンテトラカルボン
酸、フレオレニリデンメタン、アントラキノジメタン、
アントロン等とそれらの誘導体があるが、これらに限定
されるものではない。また、正孔注入材料に電子受容物
質を、電子注入材料に電子供与性物質を添加して増感さ
せることもできる。
The electron injecting material has a capability of injecting electrons, has an excellent electron injecting effect on the light emitting layer or the light emitting material, and has a hole injecting layer or hole injecting excitons generated in the light emitting layer. Compounds that prevent transfer to a material and have excellent thin film forming ability are exemplified. For example, quinoline metal complex, oxadiazole, benzothiazole metal complex, benzoxazole metal complex, benzimidazole metal complex, fluorenone, anthraquinodimethane, diphenoquinone, thiopyrandioxide, oxadiazole, thiadiazole, tetrazole, perylenetetracarbon Acid, fluorenylidenemethane, anthraquinodimethane,
Examples include, but are not limited to, anthrones and derivatives thereof. Alternatively, an electron accepting substance may be added to the hole injecting material, and an electron donating substance may be added to the electron injecting material for sensitization.

【0043】本発明により得られた有機EL素子の、温
度、湿度、雰囲気等に対する安定性の向上のために、素
子の表面に保護層を設けたり、シリコンオイル等を封入
して素子全体を保護することも可能である。
In order to improve the stability of the organic EL device obtained according to the present invention with respect to temperature, humidity, atmosphere, etc., a protective layer is provided on the surface of the device or silicon oil is sealed to protect the entire device. It is also possible.

【0044】[0044]

【実施例】以下、本発明を実施例に基づきさらに詳細に
説明する。本例では、電極面積2mm×2mmの有機E
L素子の特性を測定した。
The present invention will be described in more detail with reference to the following examples. In this example, an organic E having an electrode area of 2 mm × 2 mm was used.
The characteristics of the L element were measured.

【0045】化合物(1)の合成方法 ニトロベンゼン5g中に、9,10−ビス(4−ブロモ
フェニル)フェナントレン1.46g、ジフェニルアミ
ン1.52g、および炭酸カリウム3.1g、銅粉0.
13gを加え、窒素雰囲気下、200℃で50時間加熱
撹拌した。放冷後、水30gで希釈し、酢酸エチルで抽
出した。酢酸エチルを除き、シリカゲルを用いたカラム
クロマトグラフィーにより精製し、再結晶後、昇華精製
した(収量0.7g)。NMR、FD−MS、IRによ
って化合物の生成を確認した。
Method for synthesizing compound (1) In 5 g of nitrobenzene, 1.46 g of 9,10-bis (4-bromophenyl) phenanthrene, 1.52 g of diphenylamine, 3.1 g of potassium carbonate, and 0.1 g of copper powder were added.
13 g was added, and the mixture was heated and stirred at 200 ° C. for 50 hours under a nitrogen atmosphere. After cooling, the mixture was diluted with 30 g of water and extracted with ethyl acetate. After removing ethyl acetate, the residue was purified by column chromatography using silica gel, recrystallized, and then purified by sublimation (yield 0.7 g). The formation of the compound was confirmed by NMR, FD-MS, and IR.

【0046】実施例1 洗浄したITO電極付きガラス板上に、N,N'―(3
―メチルフェニル)―N,N'―ジフェニル―1,1―
ビフェニル-4,4―ジアミン(TPD)を真空蒸着し
て、膜厚20nmの正孔注入層を得た。次いで、化合物
(1)を蒸着し膜厚40nmの発光層を作成し、トリス
(8−ヒドロキシキノリン)アルミニウム錯体(Alq
3)を蒸着し、膜厚30nmの電子注入層を得た。その
上に、マグネシウムと銀を10:1で混合した合金で膜
厚100nmの電極を形成して有機EL素子を得た。正
孔注入層および発光層は10-6Torrの真空中で、基
板温度室温の条件下で蒸着した。この素子は直流電圧5
Vで発光輝度300cd/m 2、最大発光輝度2100
0cd/m2、5Vの時の発光効率2.6lm/Wの青緑
色発光が得られた。次に3mA/cm2の電流密度で、
この素子を連続して発光させた寿命試験の結果、初期輝
度の1/2以上の発光が10000時間以上保持され
た。
Example 1 N, N '-(3) was placed on a washed glass plate with ITO electrodes.
-Methylphenyl) -N, N'-diphenyl-1,1-
Biphenyl-4,4-diamine (TPD) is vacuum deposited
Thus, a hole injection layer having a thickness of 20 nm was obtained. Then the compound
(1) is vapor-deposited to form a light-emitting layer having a thickness of 40 nm;
(8-Hydroxyquinoline) aluminum complex (Alq
3) was deposited to obtain an electron injection layer having a thickness of 30 nm. That
A film made of an alloy of magnesium and silver mixed at a ratio of 10: 1
An organic EL element was obtained by forming an electrode having a thickness of 100 nm. Correct
The hole injection layer and the light emitting layer are 10-6In a Torr vacuum,
The deposition was performed under the condition of a plate temperature of room temperature. This element has a DC voltage of 5
Light emission luminance of 300 cd / m at V Two, Maximum light emission luminance 2100
0 cd / mTwoBlue-green with luminous efficiency 2.6lm / W at 5V
Color emission was obtained. Next, 3 mA / cmTwoAt a current density of
As a result of a life test in which this device was continuously lit,
Light emission of more than 1/2 of the degree is held for more than 10,000 hours
Was.

【0047】実施例2〜35 発光層に、化合物(1)に換え、表2で示した化合物を
使用する以外は実施例1と同様の方法で有機EL素子を
作製した。この素子は表2に示す発光特性を示した。
Examples 2 to 35 Organic EL devices were produced in the same manner as in Example 1 except that the compounds shown in Table 2 were used in place of the compound (1) in the light emitting layer. This device exhibited the emission characteristics shown in Table 2.

【0048】[0048]

【表2】 [Table 2]

【0049】 [0049]

【0050】実施例36 洗浄したITO電極付きガラス板上に化合物(3)を真
空蒸着して膜厚100nmの発光層を作成し、その上
に、マグネシウムと銀を10:1で混合した合金で膜厚
150nmの膜厚の電極を形成して有機EL素子を得
た。発光層および陰極は、10-6Torrの真空中で基
板温度室温の条件下で蒸着した。この素子は直流電圧5
Vで発光輝度35cd/m2、最大発光輝度2200c
d/m2、5Vの時の発光効率0.5lm/Wの青緑色
発光が得られた。次に3mA/cm2の電流密度で、こ
の素子を連続して発光させた寿命試験の結果、初期輝度
の1/2以上の発光が5000時間以上保持された。
Example 36 A compound (3) was vacuum-deposited on a washed glass plate with an ITO electrode to form a 100-nm-thick light-emitting layer, on which an alloy obtained by mixing magnesium and silver at a ratio of 10: 1 was used. An electrode having a thickness of 150 nm was formed to obtain an organic EL device. The light emitting layer and the cathode were deposited at a substrate temperature of room temperature in a vacuum of 10 -6 Torr. This element has a DC voltage of 5
Light emission luminance of 35 cd / m 2 at V, maximum light emission luminance of 2200 c
Blue-green light with a luminous efficiency of 0.5 lm / W at d / m 2 and 5 V was obtained. Next, as a result of a life test in which the device was continuously caused to emit light at a current density of 3 mA / cm 2 , light emission of 1/2 or more of the initial luminance was maintained for 5000 hours or more.

【0051】実施例37 洗浄したITO電極付きガラス板上に、化合物(4)を
蒸着し膜厚80nmの正孔注入層を作成し、次いで、A
lq3を蒸着し、膜厚20nmの発光層を得た。その上
に、マグネシウムと銀を10:1で混合した合金で膜厚
100nmの電極を形成して有機EL素子を得た。正孔
注入層および発光層は10-6Torrの真空中で、基板
温度室温の条件下で蒸着した。この素子は直流電圧5V
で発光輝度80cd/m2、最大発光輝度9000cd
/m2、5Vの時の発光効率1.0lm/Wの発光が得
られた。次に3mA/cm2の電流密度で、この素子を
連続して発光させた寿命試験の結果、初期輝度の1/2
以上の発光が3000時間以上保持された。
Example 37 Compound (4) was vapor-deposited on a washed glass plate with an ITO electrode to form a hole injection layer having a thickness of 80 nm.
lq3 was deposited to obtain a light-emitting layer having a thickness of 20 nm. An electrode having a thickness of 100 nm was formed thereon using an alloy in which magnesium and silver were mixed at a ratio of 10: 1 to obtain an organic EL device. The hole injection layer and the light emitting layer were deposited in a vacuum of 10 -6 Torr at a substrate temperature of room temperature. This element has a DC voltage of 5V
At 80 cd / m 2 , maximum luminous luminance of 9000 cd
/ M 2 , luminescence with a luminous efficiency of 1.0 lm / W at 5 V was obtained. Next, at a current density of 3 mA / cm 2 , as a result of a life test in which the device was continuously illuminated, it was found that half of the initial luminance was obtained.
The above light emission was held for 3000 hours or more.

【0052】実施例38 洗浄したITO電極付きガラス板上に、TPDを蒸着し
て膜厚50nmの正孔注入層を作製し、次いで、Alq
3を蒸着し、膜厚20nmの発光層を得た。化合物(2
4)を蒸着し膜厚60nmの電子注入層を作成し、その
上に、マグネシウムと銀を10:1で混合した合金で膜
厚100nmの電極を形成して有機EL素子を得た。正
孔注入層および発光層は10-6Torrの真空中で、基
板温度室温の条件下で蒸着した。この素子は直流電圧5
Vで発光輝度110cd/m2、最大発光輝度5000
cd/m2、5Vの時の発光効率1.4lm/Wの発光
が得られた。次に3mA/cm2の電流密度で、この素
子を連続して発光させた寿命試験の結果、初期輝度の1
/2以上の発光が3000時間以上保持された。
Example 38 A hole injection layer having a thickness of 50 nm was formed by vapor deposition of TPD on a washed glass plate with an ITO electrode.
3 was deposited to obtain a light emitting layer having a thickness of 20 nm. Compound (2
4) was vapor-deposited to form an electron injection layer having a thickness of 60 nm, and an electrode having a thickness of 100 nm was formed thereon using an alloy in which magnesium and silver were mixed at a ratio of 10: 1 to obtain an organic EL device. The hole injection layer and the light emitting layer were deposited in a vacuum of 10 -6 Torr at a substrate temperature of room temperature. This element has a DC voltage of 5
Emission luminance of 110 cd / m 2 at V, maximum emission luminance of 5000
Light emission with a luminous efficiency of 1.4 lm / W at cd / m 2 and 5 V was obtained. Next, at a current density of 3 mA / cm 2 , as a result of a life test in which the device was continuously lit, the initial luminance was 1%.
/ 2 or more light emission was maintained for 3000 hours or more.

【0053】実施例39 洗浄したITO電極付きガラス板上に、TPDを真空蒸
着して、膜厚20nmの正孔注入層を得た。次いで、
N,N'―(4―メチルフェニル)―N,N'―(4−n
−ブチルフェニル)―フェナントレン―9,10―ジア
ミンと化合物(2)とを100:1の重量比で蒸着し膜
厚40nmの発光層を作成し、Alq3を蒸着し、膜厚
10nmの電子注入層を得た。その上に、アルミニウム
とリチウムを25:1で混合した合金で膜厚100nm
の電極を形成して有機EL素子を得た。正孔注入層およ
び発光層は10-6Torrの真空中で、基板温度室温の
条件下で蒸着した。この素子は直流電圧5Vで発光輝度
320cd/m2、最大発光輝度18000cd/m2
5Vの時の発光効率2.8lm/Wの発光が得られた。
次に3mA/cm2の電流密度で、この素子を連続して
発光させた寿命試験の結果、初期輝度の1/2以上の発
光が10000時間以上保持された。
Example 39 TPD was vacuum-deposited on a washed glass plate with an ITO electrode to obtain a hole injection layer having a thickness of 20 nm. Then
N, N '-(4-methylphenyl) -N, N'-(4-n
-Butylphenyl) -phenanthrene-9,10-diamine and the compound (2) were deposited at a weight ratio of 100: 1 to form a light emitting layer having a thickness of 40 nm, Alq3 was deposited, and an electron injection layer having a thickness of 10 nm was formed. I got On top of that, an alloy in which aluminum and lithium are mixed at a ratio of 25: 1 has a thickness of 100 nm.
Was formed to obtain an organic EL device. The hole injection layer and the light emitting layer were deposited in a vacuum of 10 -6 Torr at a substrate temperature of room temperature. This device has a light emission luminance of 320 cd / m 2 at a DC voltage of 5 V, a maximum light emission luminance of 18000 cd / m 2 ,
Light emission with a luminous efficiency of 2.8 lm / W at 5 V was obtained.
Next, as a result of a life test in which the device was continuously lit at a current density of 3 mA / cm 2 , luminescence of 1 / or more of the initial luminance was maintained for 10000 hours or more.

【0054】実施例40 洗浄したITO電極付きガラス板上に、TPDを真空蒸
着して、膜厚20nmの正孔注入層を得た。次いで、化
合物(1)とルブレンとを100:1の重量比で蒸着し
膜厚40nmの発光層を作成し、Alq3を蒸着し、膜
厚10nmの電子注入層を得た。その上に、マグネシウ
ムと銀を10:1で混合した合金で膜厚100nmの電
極を形成して有機EL素子を得た。正孔注入層および発
光層は10-6Torrの真空中で、基板温度室温の条件
下で蒸着した。この素子は直流電圧5Vで発光輝度18
0cd/m2、最大発光輝度17000cd/m2、5V
の時の発光効率2.5lm/Wの黄色発光が得られた。
次に3mA/cm2の電流密度で、この素子を連続して
発光させた寿命試験の結果、初期輝度の1/2以上の発
光が10000時間以上保持された。
Example 40 TPD was vacuum-deposited on a cleaned glass plate with an ITO electrode to obtain a hole injection layer having a thickness of 20 nm. Next, the compound (1) and rubrene were evaporated at a weight ratio of 100: 1 to form a light emitting layer having a thickness of 40 nm, and Alq3 was evaporated to obtain an electron injection layer having a thickness of 10 nm. An electrode having a thickness of 100 nm was formed thereon using an alloy in which magnesium and silver were mixed at a ratio of 10: 1 to obtain an organic EL device. The hole injection layer and the light emitting layer were deposited in a vacuum of 10 -6 Torr at a substrate temperature of room temperature. This device has a luminance of 18 at a DC voltage of 5 V.
0 cd / m 2 , maximum light emission luminance 17000 cd / m 2 , 5 V
In this case, yellow luminescence with a luminous efficiency of 2.5 lm / W was obtained.
Next, as a result of a life test in which the device was continuously lit at a current density of 3 mA / cm 2 , luminescence of 1 / or more of the initial luminance was maintained for 10000 hours or more.

【0055】実施例41〜44 発光層に、ドーピング化合物として表3で示した化合物
を使用する以外は実施例40と同様の方法で有機EL素
子を作製した。この素子は表3に示す発光特性を示し
た。
Examples 41 to 44 Organic EL devices were produced in the same manner as in Example 40 except that the compounds shown in Table 3 were used as the doping compounds in the light emitting layer. This device exhibited the emission characteristics shown in Table 3.

【0056】[0056]

【表3】 [Table 3]

【0057】実施例45 洗浄したITO電極付きガラス板上に、4、4’、4”
−トリス[N−(3−メチルフェニル)−N−フェニル
アミノ]トリフェニルアミンを真空蒸着して、膜厚40
nmの正孔注入層を得た。次いで、4,4’−ビス[N
−(1−ナフチル)−N−フェニルアミノ]ビフェニル
(α−NPD)を真空蒸着して、膜厚10nmの第二正
孔注入層を得た。さらに、化合物(1)を真空蒸着し
て、膜厚30nmの発光層を作成し、さらにビス(2−
メチル−8−ヒドロキシキノリナト)(1−フェノラー
ト)ガリウム錯体を真空蒸着して膜厚30nmの電子注
入層を作成し、その上に、マグネシウムと銀を10:1
で混合した合金で膜厚150nmの電極を形成して、有
機EL素子を得た。正孔注入層および発光層は10- 6
orrの真空中で、基板温度室温の条件下で蒸着した。
この素子は、直流電圧5Vで発光輝度330(cd/m
2)、最大発光輝度26000(cd/m2)、発光効率
3.2(lm/W)の青緑色発光が得られた。
Example 45 On a washed glass plate with ITO electrodes, 4, 4 ', 4 "
-Tris [N- (3-methylphenyl) -N-phenyl
[Amino] triphenylamine by vacuum evaporation to a film thickness of 40
As a result, a hole injection layer having a thickness of nm was obtained. Then, 4,4'-bis [N
-(1-Naphthyl) -N-phenylamino] biphenyl
(Α-NPD) is vacuum deposited to form a second positive electrode having a thickness of 10 nm.
A hole injection layer was obtained. Further, the compound (1) is vacuum-deposited.
To form a light emitting layer having a thickness of 30 nm.
Methyl-8-hydroxyquinolinato) (1-phenolic
G) Vacuum deposition of gallium complex and electron injection with a thickness of 30 nm
An inlay is created, over which magnesium and silver are added 10: 1.
An electrode with a thickness of 150 nm is formed from the alloy mixed in
EL device was obtained. The hole injection layer and the light emitting layer are 10- 6T
Vapor deposition was performed at a substrate temperature of room temperature in a vacuum of orr.
This device has a light emission luminance of 330 (cd / m) at a DC voltage of 5 V.
Two), Maximum emission luminance 26000 (cd / mTwo), Luminous efficiency
A blue-green emission of 3.2 (lm / W) was obtained.

【0058】実施例46〜79 発光層に、化合物(1)に換え、表4で示した化合物を
使用する以外は実施例45と同様の方法で有機EL素子
を作製した。この素子は表4に示す発光特性を示した。
Examples 46 to 79 Organic EL devices were produced in the same manner as in Example 45, except that the compounds shown in Table 4 were used instead of the compound (1) in the light emitting layer. This device exhibited the emission characteristics shown in Table 4.

【0059】[0059]

【表4】 [Table 4]

【0060】 [0060]

【0061】実施例80 洗浄したITO電極付きガラス板上に、化合物(9)、
トリス(8−ヒドロキシキノリン)アルミニウム錯体、
TPD、ポリカーボネート樹脂(PC−A)を3:2:
3:8の重量比でテトラヒドロフランに溶解させ、スピ
ンコーティング法により膜厚100nmの発光層を得
た。その上に、マグネシウムと銀を10:1で混合した
合金で膜厚150nmの電極を形成し有機EL素子を得
た。この素子は直流電圧5Vで発光輝度12cd/
2、最大発光輝度3100cd/m2、5Vの時の発光
効率0.5lm/Wの発光が得られた。次に3mA/c
2の電流密度で、この素子を連続して発光させた寿命
試験の結果、初期輝度の1/2以上の発光が3000時
間以上保持された。
Example 80 Compound (9) was placed on a washed glass plate with an ITO electrode.
Tris (8-hydroxyquinoline) aluminum complex,
TPD, polycarbonate resin (PC-A) 3: 2:
It was dissolved in tetrahydrofuran at a weight ratio of 3: 8, and a 100-nm-thick light-emitting layer was obtained by spin coating. An electrode having a thickness of 150 nm was formed thereon using an alloy in which magnesium and silver were mixed at a ratio of 10: 1 to obtain an organic EL device. This device emits light at a luminance of 12 cd /
m 2 , a maximum light emission luminance of 3100 cd / m 2 , and light emission of 0.5 lm / W at 5 V were obtained. Next, 3 mA / c
As a result of a life test in which the device was continuously lit at a current density of m 2 , luminescence of 1 / or more of the initial luminance was maintained for 3,000 hours or more.

【0062】本発明の有機EL素子は発光効率、発光輝
度の向上と長寿命化を達成するものであり、併せて使用
される発光材料、ドーピング材料、正孔注入材料、電子
注入材料、増感剤、樹脂、電極材料等および素子作製方
法を限定するものではない。
The organic EL device of the present invention achieves improvement in luminous efficiency, luminous brightness and long life, and is used together with a luminescent material, a doping material, a hole injection material, an electron injection material, and a sensitizer. It does not limit the agent, resin, electrode material and the like, and the element manufacturing method.

【0063】[0063]

【発明の効果】本発明により、従来に比べて高発光効
率、高輝度であり、長寿命の有機EL素子を得ることが
できた。
According to the present invention, it is possible to obtain an organic EL device having higher luminous efficiency, higher luminance and longer life than the conventional one.

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】下記一般式[1]で示される有機エレクト
ロルミネッセンス素子材料。 一般式[1] 【化1】 [ただし、式中 Ar1およびAr2は置換もしくは未置
換のアリール基を表し、Ar3は置換もしくは未置換の
アリーレン基を表す。また、nは1から10までの整数
を表す。]
1. An organic electroluminescent device material represented by the following general formula [1]. General formula [1] [Wherein, Ar 1 and Ar 2 represent a substituted or unsubstituted aryl group, and Ar 3 represents a substituted or unsubstituted arylene group. N represents an integer of 1 to 10. ]
【請求項2】 nが1から4までの整数である請求項1
記載の有機エレクトロルミネッセンス素子材料。
2. The method according to claim 1, wherein n is an integer from 1 to 4.
The organic electroluminescent device material according to the above.
【請求項3】 一対の電極間に発光層を含む複数層の有
機化合物薄膜を形成した有機エレクトロルミネッセンス
素子において、少なくとも一層が請求項1記載の有機エ
レクトロルミネッセンス素子材料を含有する層である有
機エレクトロルミネッセンス素子。
3. An organic electroluminescent device having a plurality of organic compound thin films including a light emitting layer formed between a pair of electrodes, wherein at least one layer is a layer containing the organic electroluminescent device material according to claim 1. Luminescent element.
【請求項4】 一対の電極間に発光層を含む複数層の有
機化合物薄膜を形成した有機エレクトロルミネッセンス
素子において、発光層が請求項1記載の有機エレクトロ
ルミネッセンス素子材料を含有する層である有機エレク
トロルミネッセンス素子。
4. An organic electroluminescent device in which a plurality of organic compound thin films including a light emitting layer are formed between a pair of electrodes, wherein the light emitting layer is a layer containing the organic electroluminescent device material according to claim 1. Luminescent element.
【請求項5】 一対の電極間に発光層を含む複数層の有
機化合物薄膜を形成した有機エレクトロルミネッセンス
素子において、発光層と陽極との間の正孔注入帯域中の
少なくとも一層が請求項1記載の有機エレクトロルミネ
ッセンス素子材料を含有する層である有機エレクトロル
ミネッセンス素子。
5. An organic electroluminescence device in which a plurality of organic compound thin films including a light emitting layer are formed between a pair of electrodes, at least one layer in a hole injection zone between the light emitting layer and the anode. The organic electroluminescent element which is a layer containing the organic electroluminescent element material of the above.
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KR102573176B1 (en) * 2020-04-09 2023-09-04 주식회사 엘지화학 Organic light emitting device
WO2022177400A1 (en) * 2021-02-22 2022-08-25 주식회사 엘지화학 Compound and organic light-emitting element comprising same
WO2023075158A1 (en) * 2021-10-28 2023-05-04 덕산네오룩스 주식회사 Compound for organic electric element, organic electric element using same, and electronic device thereof
CN115304495A (en) * 2022-07-20 2022-11-08 北京八亿时空液晶科技股份有限公司 Phenanthrene derivative and application thereof

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