JP2000011890A - Gas-discharge type display device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To precisely manufacture a device having reduced resistance of a bus electrode or address electrode and prevented from the reactivity to a dielectric layer, and to improve the quality by including a Ti layer in a first electrode. SOLUTION: A front substrate 30 comprises a transparent electrode 15 of SnO2 or ITO formed by repeating a pair of stripes at prescribed intervals on the reverse side of a front glass base 14 and a bus electrode 16 consisting of a wiring of Cr thin film layer/Cu layer/Ti thin film layer formed on each of a pair of the transparent electrodes 15 so as to be shifted to one side thereof in order to reduce the line resistance. A back substrate 31 comprises an address electrode 11 consisting of a wiring of Cr thin film layer/Cu layer/Ti thin film layer formed in stripe form on the surface of a back glass base 10 in so as to be orthogonal to the transparent electrode 15. According to this structure, satisfactory adhesion can be ensured between the bus electrode 16 and the transparent electrode 15 and between the address electrode 16 and the back glass base 10.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a gas discharge type display device provided with a gas discharge type display panel.

[0002]

2. Description of the Related Art A gas discharge type display device such as a plasma display performs display by self-emission, so that the display angle is wide and the display is easy to see. In addition, it has features such as being able to manufacture a thin type and realizing a large screen, and has begun to be applied to a display device of an information terminal device and a high-definition television receiver. Plasma displays are roughly classified into a DC drive type and an AC drive type. Among them, the AC drive type plasma display has a high luminance due to the memory effect of the dielectric layer covering the electrodes, and has a practically usable life due to the formation of the protective layer and the like. As a result,
Plasma displays have been put to practical use as versatile video monitors. FIG. 4 is a perspective view showing the structure of a plasma display panel that has been put into practical use. In this figure, the front substrate 100 is
And the discharge space region 300.

The front substrate 100 includes a front glass substrate 400
The tin oxide (SnO ₂ ) or ITO (Indium T
A display electrode 600 made of a transparent electrode material such as in oxide, a bus electrode 700 made of a low-resistance material, a dielectric layer 800 made of a transparent insulating material, and a protective layer 900 made of a material such as magnesium oxide (MgO) are formed. Structure. The rear substrate 200 has address electrodes 1000 and barrier ribs 110 on a rear glass substrate 500.
0, a structure in which a phosphor layer 1200 is formed.
Although not shown, a dielectric layer 1300 is also formed on the address electrode 1000.

A front substrate 100 and a rear substrate 200
Are bonded so that the display electrode 600 and the address electrode 1000 are substantially orthogonal to each other, so that the discharge space region 30
0 is formed between the front substrate 100 and the rear substrate 200.

In this gas discharge type display device, the front substrate 1
00, an AC voltage is applied between a pair of display electrodes 600 provided on the rear substrate 200, and a voltage is applied between the address electrodes 1000 provided on the rear substrate 200 and the display electrodes 600 to generate an address discharge. A main discharge is generated in the cell. The red, green, and blue phosphors 1200 that are separately applied to the respective discharge cells are caused to emit light by the ultraviolet light generated by the main discharge, and display is performed. A conventional example of such a gas discharge type display device is described in, for example, pages 208 to 215 of Flat Panel Display 1996 (edited by Nikkei Microdevices, 1995).

The display electrode 60 on the front substrate 100
As the bus electrode 700 formed on the substrate 0 and the address electrode 1000 of the rear substrate 200, a Cr / Cu / Cr layer (1
000a-1000c) patterns are known to be used. Here, the bus electrode 700 on the front substrate 100 and the address electrode 1000 on the rear substrate 200
Is formed in more detail with reference to FIGS. 5A to 5C by using a Cr / Cu / Cr layer (1000a to 1000c) pattern. FIG. 5 shows an address electrode 1 on a rear glass substrate 500.
000 is formed. The bus electrodes 700 of the front substrate 100 are also formed by substantially the same steps, and a description thereof will be omitted.

First, a Cr / Cu / Cr layer (1000a-1000) serving as an address electrode 1000 is formed on a rear glass substrate 500.
1000c) is sequentially formed by stacking using a film forming means such as a sputtering method or a vapor deposition method, and a resist 2500 is applied thereon (film forming step (a)). Next, the applied resist 2500 is applied to a desired address electrode 10.
Exposure and development are performed so as to form the pattern No. 00 (photolithography steps (b) and (c)). Next, the uppermost Cr layer 1000a is selectively etched into a desired pattern using an etching solution for Cr (etching step (d)). Next, the exposed and developed resist 2500 is peeled off, and the resist 2500 is again applied and formed (resist peeling / coating steps (e) and (f)). The above processing is performed for the Cu layer 1000
The address electrode 1000 is formed on the rear glass substrate 500 by repeating the process for each of the b and Cr layers 1000c (steps (g) to (o)).

As described above, when the Cu layer 1000b is selectively etched in the etching step (i), the Cr pattern 1000a thereon is completely covered with the resist pattern as shown in FIG. Further, when the Cr layer 1000c is selectively etched in the etching step (n), the Cr layer pattern 1000a and the Cu layer pattern 1000b, which are the same material, are not side-etched.
(M) As shown in FIG.
In addition, it is necessary to completely cover the Cu pattern 1000b with the resist pattern.

[0009]

As described above, the bus electrodes on the front substrate and the address electrodes on the rear substrate are
In order to form a laminated pattern of Cr thin film layer / Cu layer / Cr thin film layer, it is necessary to repeat resist coating, exposure / development, and peeling every time each layer is selectively etched. This has been a major factor in increasing the manufacturing cost of the front substrate and the rear substrate having a simple configuration.

[0010] An object of the present invention is to solve the above problems.
The bus electrodes provided on the display electrodes of the front substrate and the address electrodes provided on the glass substrate of the back substrate have been manufactured so that they can be manufactured with high resistance while reducing the resistance and preventing reactivity with the dielectric layer. An object of the present invention is to provide a gas discharge type display device realizing high quality. Another object of the present invention is to provide a bus electrode provided on a display electrode, which has a low resistance, has improved adhesiveness (bonding property) with the display electrode, and has a low reactivity with a dielectric layer. An object of the present invention is to provide a gas discharge type display device having a front substrate realizing a high-quality and low-cost one by reducing the number of steps and manufacturing with high precision, and a method of manufacturing the same. Another object of the present invention is to provide an address electrode provided on a glass substrate which has low resistance, has improved adhesion (bonding property) to the glass substrate, and has low reactivity with the dielectric layer. It is an object of the present invention to provide a gas discharge type display device having a back substrate that can be manufactured with high precision by reducing the number of steps and that realizes high quality and low cost, and a method of manufacturing the same.

[0011]

To achieve the above object, the present invention provides a front substrate having a plurality of first electrodes;
A gas discharge type display device comprising a back substrate having a plurality of second electrodes, wherein the first electrode includes a Ti layer. Further, according to the present invention, the first electrode in the gas discharge type display device is formed by laminating a transparent electrode made of SnO ₂ or ITO and a Cr thin film layer / Cu layer / Ti thin film layer on the transparent electrode. And a bus electrode. The present invention is also a gas discharge display device including a front substrate having a plurality of first electrodes and a back substrate having a plurality of second electrodes, wherein the first electrode is formed of SnO ₂ Alternatively, it is characterized by comprising a transparent electrode made of ITO and a bus electrode formed by laminating metal thin film layers made of different materials on both surfaces of a Cu layer on the transparent electrode.

Further, according to the present invention, as a metal thin film layer in the bus electrode of the gas discharge type display device, the transparent electrode side may be C-type.
The r thin film layer is formed on the opposite side by a Ti thin film layer. According to another aspect of the present invention, there is provided a gas discharge display device including a front substrate having a plurality of first electrodes and a back substrate having a plurality of second electrodes, wherein the second electrode has a Ti electrode.
It is characterized by including a layer. In addition, the present invention provides the gas discharge type display device, wherein the second electrode is a Cr thin film layer / Cu layer /
It is characterized in that a Ti thin film layer is formed by lamination. Also,
The present invention is a gas discharge display device including a front substrate having a plurality of first electrodes and a back substrate having a plurality of second electrodes, wherein the second electrode is provided on both sides of a Cu layer. And an address electrode formed by laminating metal thin film layers made of different materials.

Further, the present invention is characterized in that, as a metal thin film layer in the address electrode of the gas discharge type display device, a glass thin film layer is formed on the glass substrate side, and a Ti thin film layer is formed on the opposite side. Further, the present invention is characterized in that the bus electrode of the gas discharge type display device is formed by selective etching using the Ti thin film layer pattern as a mask. Also,
The present invention is characterized in that the Ti thin film layer pattern of the gas discharge type display device is formed by laser removal processing on the Ti thin film. Further, the present invention is characterized in that the transparent electrode of the gas discharge type display device is formed by laser removal processing on a SnO ₂ or ITO film.
Further, the present invention is characterized in that the address electrodes of the gas discharge type display device are formed by selective etching using the Ti thin film layer pattern as a mask. Also, the present invention
The Ti thin film layer pattern of the gas discharge type display device is represented by Ti
The thin film is formed by laser removal processing.

Further, the present invention provides a front glass substrate and a plurality of pairs of transparent electrodes made of ITO or SnO ₂ for generating electric discharge, which are formed in stripes, are arranged in parallel on the front glass substrate. A bus electrode formed by laminating metal thin film layers of different materials on both sides of a Cu layer on each of the configured transparent electrode group and the transparent electrode set paired with the transparent electrode group to reduce line resistance. A bus electrode group configured by arranging a plurality of pairs in parallel corresponding to the transparent electrode set, and a dielectric layer formed on the front glass substrate including the transparent electrode group and the surface of the bus electrode group And a front substrate having a protective film formed on the surface of the dielectric layer, a glass substrate for the back surface, and a glass substrate for the back surface which is different from each other on both surfaces of the Cu layer in a stripe shape so as to intersect the bus electrode group. Material gold An address electrode group formed by arranging a plurality of address electrodes formed by laminating thin film layers, a dielectric layer formed on the back glass substrate including the surface of the address electrode group, and A rear substrate having stripe-shaped or lattice-shaped partition walls provided to secure a discharge space and a phosphor provided on a dielectric layer between the partition walls; and the front substrate and the rear substrate. A gas discharge type display device comprising a sealing member for sealing the front substrate and the rear substrate such that a rare gas is filled in a space between the front substrate and the rear substrate.

The present invention also provides a front glass substrate and a plurality of pairs of transparent electrodes formed of ITO or SnO ₂ for generating electric discharge and formed in a stripe shape on the front glass substrate. A bus electrode formed by laminating a Cr thin film layer / Cu layer / Ti thin film layer on each of the configured transparent electrode group and a pair of transparent electrode pairs of the transparent electrode group to reduce the line resistance is formed as a transparent pair. A bus electrode group formed by arranging a plurality of paired sets corresponding to the electrode set, a dielectric layer formed on the front glass substrate including the surfaces of the transparent electrode group and the bus electrode group, and A front substrate having a protective film formed on the surface of a dielectric layer; a back glass substrate; and a Cr thin film layer / Cu layer / Ti thin film on the back glass substrate in a stripe shape so as to intersect the bus electrode group. Formed by laminating layers Address electrodes formed by arranging a plurality of address electrodes in parallel, a dielectric layer formed on the back glass substrate including the surface of the address electrode group, and a discharge space on the dielectric layer. A rear substrate having a stripe-shaped or lattice-shaped partition provided and a phosphor provided on a dielectric layer between the partitions, and a rare gas in a space between the front substrate and the back substrate. A gas discharge display device characterized by comprising a sealing member for sealing the front substrate and the rear substrate so as to be sealed.

Further, the present invention is characterized in that at least the bus electrode is formed by covering the dielectric layer on the front substrate of the gas discharge type display device with a thin-film dielectric film made of SiO ₂ . Further, the present invention is characterized in that at least the address electrode is formed by covering the dielectric layer on the back substrate of the gas discharge type display device with a thin film dielectric film made of SiO ₂ . Further, the present invention provides a bus electrode on the front substrate of the gas discharge type display device,
It is characterized by being formed by selective etching using the Ti thin film layer pattern as a mask.

Further, the invention is characterized in that the Ti thin film layer pattern of the gas discharge type display device is formed by laser removal processing on the Ti thin film. Further, the present invention is characterized in that the address electrodes on the back substrate of the gas discharge type display device are formed by selective etching using the Ti thin film layer pattern as a mask. Further, the present invention provides a Ti thin film layer pattern of the gas discharge type display device,
It is characterized by being formed by laser removal processing on a Ti thin film.

Further, the present invention is characterized in that the transparent electrode pattern on the front substrate of the gas discharge type display device is formed by laser removal processing on an ITO or SnO ₂ film.

As described above, according to the above configuration,
The bus electrodes provided on the display electrodes of the front substrate and the address electrodes provided on the glass substrate of the back substrate have been manufactured so that they can be manufactured with high resistance while reducing the resistance and preventing reactivity with the dielectric layer. A high-quality gas discharge display device can be realized. Further, according to the above configuration, the bus electrode provided on the display electrode has a low resistance, has improved adhesion (bonding property) to the display electrode, and has a low reactivity with the dielectric layer. And a high quality and low cost front substrate can be realized. Further, according to the above configuration, the resistance of the address electrode provided on the glass substrate is reduced, and the address electrode is bonded to the glass substrate.
And a high-quality, low-cost rear substrate can be realized by reducing the number of processes and manufacturing a substrate having reduced reactivity with respect to the dielectric layer.

According to the above structure, the bus electrode provided on the display electrode of the front substrate and the address electrode provided on the glass substrate of the back substrate have SiO ₂
By coating the thin film dielectric layer made of, the reactivity of the electrode with the dielectric layer can be further prevented, the disconnection of the electrode can be prevented over a long period of use, and the reliability of the electrode can be improved. .

[0021]

Embodiments of the present invention will be described with reference to the drawings. First, an embodiment of a gas discharge type display panel constituting a gas discharge type display device according to the present invention will be described with reference to FIG. Gas discharge type display devices (plasma displays) are roughly classified into an AC drive type and a DC drive type depending on how a voltage is applied when a discharge occurs. An AC-driven plasma display has a relatively simple structure as compared with a DC-driven plasma display. Partition walls (ribs) serving as partitions for forming discharge cells are formed in a cell shape in the case of a DC drive type,
In the case of AC drive type, the resolution is set to VG
A (640 x 480 dots) to SVGA (800 x 6 dots)
(00 dots), and it is possible to cope with higher definition for further increase.

FIG. 2 shows an embodiment of a gas discharge type panel used in an AC drive type plasma display according to the present invention. FIG. 2 (a) is a sectional view parallel to an address electrode. (B) is a cross-sectional view perpendicular to the address electrodes. 2, the front substrate 30 includes a front glass substrate 14, SnO ₂ or IT that is a pair in a stripe shape on the back surface of the glass substrate is formed by repeating at a predetermined interval
A transparent electrode 15 made of O or the like, and a bus electrode 16 made of a wiring such as a Cr thin film layer / Cu layer / Ti thin film layer formed on each of the pair of transparent electrodes 15 so as to be deflected to reduce line resistance. And a thick dielectric layer 18 covering the bus electrode 16.
Thin film dielectric layer 17 of SiO ₂ or the like for preventing reaction with
And a thick-film transparent dielectric layer 18 made of a glass material having a substantially flat surface on the thin-film dielectric layer 17 and serving to protect the electrodes and maintain a discharge state (memory function). And a protective film 19 of MgO or the like coated on the surface of the thick film dielectric layer 18.

The transparent electrode 15 such as SnO ₂ or ITO is an electrode for generating a discharge, and is also called a display electrode, and is formed with a thickness of about 0.05 to 0.2 μm. The bus electrode 16 composed of a wiring such as a Cr thin film layer / Cu layer / Ti thin film layer causes a discharge with the transparent electrode 15 and lowers the high line resistance of the transparent electrode 15.
In particular, this bus electrode 16 is as thin as possible as far as possible from the discharge cell and in a range where a required resistance value is obtained on the transparent electrode 15 in this structure so as not to hinder light emission and reduce the luminance. It is desired that the wiring width be about 30 to 100 μm. Further, by forming the bus electrode 16 from a wiring such as a Cr thin film layer / Cu layer / Ti thin film layer, the bus electrode 16 has an adhesive property with the transparent electrode 15 and has a good connection with the dielectric layer. It has become possible to prevent a reaction and prevent a disconnection or the like from occurring.

The thin film dielectric layer 17 such as SiO ₂ has a thickness of 0.0
The bus electrode 16 is formed with a thickness of about 5 to 0.2 μm.
(Especially the uppermost Ti thin film layer 11a) is the thick dielectric layer 18
To prevent the bus electrode 16 from being disconnected. The thick-film dielectric layer 18 is made of a paste-like material mainly composed of a low-melting glass powder by a thick-film printing method (screen printing method) or the like, and has a flat surface by leveling. 30
It is formed with a thickness of about μm. Protective film 19 such as MgO
Are used to protect the electrodes and maintain a discharge state (memory function).
It is formed with a thickness of about 0 μm. Finally, each bus electrode 16 is connected to an electrode 21a connected to a scan drive IC (not shown) at the end of the front substrate 30 by an anisotropic conductive material containing conductive particles in order to simplify the connection process. The sheets 22 are connected by thermocompression bonding. That is, each bus electrode 16 is connected to the scan drive IC.

The back substrate 31 is a back glass substrate 10
And the transparent electrode 15 on the surface of the back glass substrate 10.
Formed in a stripe shape so as to be orthogonal to
An address electrode 11 composed of a wiring such as a thin film layer / Cu layer / Ti thin film layer; a thin film dielectric layer 12 such as SiO ₂ for covering the address electrode 11 and preventing a reaction with the thick film dielectric layer 13; A thick film dielectric layer 13 made of a glass material having a substantially flat surface is formed on the thin film dielectric layer 12. The address electrode 11 composed of a wiring such as a Cr thin film layer / Cu layer / Ti thin film layer is an electrode for writing to a discharge cell, and has a width (50 to 200
μm). Thus, the address electrode 11
Is composed of wiring such as a Cr thin film layer / Cu layer / Ti thin film layer, whereby the address electrode 11 has an adhesive property with the glass substrate 10 for the back surface, and also prevents a reaction action with the dielectric layer. As a result, it is possible to prevent disconnection and the like. Thin film dielectric layer 12 such as SiO ₂
Is formed to a thickness of about 0.05 to 0.2 μm to prevent the address electrode 11 (especially the uppermost Ti thin film layer 11 a) from reacting with the thick dielectric layer 13, and
Is to prevent disconnection. The thick-film dielectric layer 13 is made of a paste having a low melting point glass powder as a main component by a screen printing method or the like, and has a flat surface by leveling.
It is formed with a thickness of about 0 μm.

On the back substrate 31, partition walls 23 are provided in stripes to secure a minute discharge space and to prevent mixing of the three color phosphors 24. A phosphor 24 for each color is formed. That is, one pixel is formed by three rows of R, G, and B phosphors adjacent to the phosphor 24 of each color formed between the partition walls 23. The barrier ribs 23 may be formed in a stripe shape parallel to the address electrodes 11 or in a lattice shape surrounding the display cells. Finally, each address electrode 11 is connected to an address (data) drive IC (not shown) at an end of the rear substrate 31.
In order to simplify the connection process, the connection is made by thermocompression bonding with an anisotropic conductive sheet 22 containing conductive particles interposed therebetween. That is, each address electrode 11 has an address (data).
It is configured to be connected to the drive IC. The back substrate 31 on which the partition wall 23 and the phosphor 24 described above were formed and the front substrate 30 were aligned, and then sealed with the sealing member 21. Then, a gas discharge type display panel is formed by mixing a rare gas into the sealed space.

In the gas discharge type display device configured as described above, an AC voltage obtained from a scan drive IC (not shown) is applied between a pair of transparent electrodes 15 provided on the front substrate 30, An address discharge is generated by applying an address voltage obtained from an address (data) drive IC (not shown) between the address electrode 11 provided on the rear substrate 31 and the transparent electrode 15 on the front substrate 30 to generate a predetermined discharge. A main discharge is generated in the cell. The R (red), G (green), and B (blue) phosphors 24 applied to the respective discharge cells by the ultraviolet light generated by the manual discharge.
Is displayed to perform display. In the embodiment of the gas discharge type display device described above, the bus electrode 16 and the address electrode 11 are composed of wiring such as a Cr thin film layer / Cu layer / Ti thin film layer, so that the adhesiveness is excellent and the dielectric material is improved. A reaction with the layer can be prevented, and a low-resistance wiring without disconnection can be formed. As a result, a reliable, high-quality gas discharge display device can be realized.

Next, a manufacturing process of the front substrate 30 and the rear substrate 31 constituting the gas discharge type display panel according to the present invention will be described with reference to FIGS. FIG.
Is used to manufacture the rear glass substrate 31.
FIG. 4 is a diagram showing a first embodiment of a manufacturing process for forming an address electrode 11 thereon. In FIG. 1, reference numeral 10 denotes a rear glass substrate, and reference numerals 11a, 11b, and 11c denote address electrodes. First, as shown in FIG. 1A, a Cr thin film 11c '/ Cu film 11b' / Ti thin film 11a 'is stacked and formed on a back glass substrate 10 by a film forming method such as a sputtering method or an evaporation method. I do. The Cr thin film 11c 'is made of Cu
The film 11 b ′ is provided with a thickness of about 0.03 to 0.2 μm in order to improve adhesion (bonding property) to the back glass substrate 10. The Cu film 11b 'was formed with a thickness of about 2 to 3 [mu] m in order to reduce the resistance. T of the top layer
The i-thin film 11a 'reduces the reaction with the dielectric layer so as not to cause disconnection, and has good absorbency against laser light for easy laser removal processing. It is a metal material selected so that side etching does not occur when the Cu film is selectively etched and has a selectivity of 0.03 to 0.2 μm.
It is provided with a thickness of about.

Next, the Ti thin film 11a 'can be removed with high precision by irradiating and scanning a laser beam shaped into a region to be removed, thereby forming a desired striped shape shown in FIG. The electrode pattern 11a is formed. That is, by simply irradiating the Ti thin film 11a 'with a shaped laser beam for scanning, the underlying Cu film 1a' is scanned.
It is possible to form a striped electrode pattern 11a that functions as a metal mask when selectively etching 1b 'and a metal mask when selectively etching the Cr thin film 11c' thereunder. it can. Next, by using the Ti thin film layer pattern 11a as a mask and performing selective etching by shower etching based on an aqueous solution containing ferric sulfate and sulfuric acid, as shown in FIG. The layer pattern 11b can be formed. The aqueous solution comprising ferric sulfate and sulfuric acid is an acidic aqueous solution capable of selectively etching the Cu layer pattern 11b, and the Ti thin film layer pattern 11a and the Cr thin film 11c 'are not etched. Next, the Cr thin film 11c 'is selectively etched by shower etching based on an aqueous solution (chlorine-based etching solution) comprising potassium permanganate and sodium metasilicate to form a Cr thin film layer pattern 11c. Cr on the back glass substrate 10 shown in FIG.
The address electrode wiring 11 having a laminated structure of a thin film layer / Cu layer / Ti thin film layer can be formed. The aqueous solution composed of potassium permanganate and sodium metasilicate is an alkaline aqueous solution capable of selectively etching the Cr thin film 11c ′, and includes the Ti thin film layer pattern 11a and the Cu layer pattern 11
b is not etched.

As described above, the Cr thin film 11c '/
A step of sequentially stacking and forming a Cu film 11b '/ Ti thin film 11a';
Reduction of the step of forming 1a, the step of performing wet etching with an etching solution capable of selectively etching the Cu film 11b ', and the step of performing wet etching in place of the etching solution capable of selectively etching the Cr thin film 11c' Cr layer / Cu layer / Ti
The address electrode wiring 11 having a laminated structure of thin film layers can be formed by reducing side etching to prevent local thinning or thinning, and having a desired thickness and width. 11 can be manufactured at low cost. Also, the transparent electrode 15 on the front substrate 30
As for the bus electrode wiring 16 having a laminated structure of the Cr thin film layer / Cu layer / Ti thin film layer on the upper side, the one having the desired thickness and width by reducing the side etching by the same process with the reduced number of steps. Can be manufactured.

Next, an embodiment of a method of manufacturing the front substrate 30 will be described. First, S on the front glass substrate 14
A transparent electrode layer such as nO ₂ or ITO is formed. The film is formed to have a thickness of about 0.05 to 0.2 μm. As a film forming method, in the case of a SnO ₂ film, CVD film formation is used.
In the case of a TO film, sputtering film formation is used. Then, in order to form a pattern as a transparent electrode, in the case of an ITO film, a photolithography method (wet etching in which a resist pattern is formed and an etching solution is sprayed),
It may be formed by using any of the laser removal processing. However, in order to simplify the process, it is preferable to use the same laser removal processing as that for forming the Ti thin film layer pattern. For more information on laser removal,
It will be described later.

Next, a bus electrode 16 is formed on the transparent electrode 15 by using the above-described electrode forming process. Next, SiO 2 is formed so as to cover at least the transparent electrode 15 and the bus electrode 16.
The thin film dielectric layer 17 such as ₂ .
It is formed with a thickness of about 0.05 to 0.2 μm. For example, a thin film dielectric layer 17 such as SiO ₂ is formed on the entire panel. Next, on the thin-film dielectric layer 17, a paste containing low-melting glass powder as a main component is printed by a thick-film printing method (for example, a screen printing method), and the surface is flattened by leveling. A thick dielectric layer 18 having a thickness of about 30 μm is formed. Next, this thick film dielectric 1
A protective film 19 of MgO or the like is formed on the substrate 8 by vapor deposition to a thickness of about 0.2 to 1.0 μm.

Next, an embodiment of a method of manufacturing the back substrate 31 will be described. First, the address electrodes 11 are formed on the back glass substrate 10 by using the above-described electrode forming process. Next, a thin film dielectric layer 12 of SiO ₂ or the like is formed to a thickness of about 0.05 to 0.2 μm by sputtering so as to cover at least the address electrode 11. For example, a thin film dielectric layer 12 such as SiO ₂ is formed on the entire panel. Next, on this thin-film dielectric layer 12, a paste containing low-melting glass powder as a main component is printed by a thick-film printing method, and the surface is flattened by leveling to a thickness of about 15 to 30 μm. Thick dielectric layer 13 is formed.

Next, a partition 23 for forming a discharge space is formed on the thick film dielectric layer 13, and a phosphor layer 24 is formed by a printing method. The partition may be formed in a stripe shape parallel to the address electrodes or in a grid shape surrounding the display cells. By the above process, the address electrode wiring 11 could be obtained on the back glass substrate 10 at low cost. In addition, the bus electrodes 16 could be obtained for the front substrate 30 by the same process.

Next, a method for forming the Ti thin film layer pattern 11a and the transparent electrode 15 by laser beam removal processing will be described with reference to FIG. The laser light source 41 is configured to emit a fundamental wave (1064 nm) of YAG or a second harmonic (532 nm) of YAG.
In particular, the fundamental wave of YAG (1064 nm) or the second harmonic of YAG (532 nm) has a good light absorbency with respect to the Ti thin film, and the Ti thin film can be removed accurately. In addition, the fundamental wave of YAG (1064 nm) or YA
The second harmonic (532 nm) of G is SnO ₂ or I
It also has good light absorption for TO film, SnO ₂ or I
The TO film can be removed accurately. 42 is
This is a beam expanding optical system that expands the laser light emitted from the laser light source 41. Reference numeral 43 denotes a mirror that reflects the laser beam whose beam diameter has been expanded by the beam expansion optical system 42 and transmits the observation light. Reference numeral 44 denotes a shaping aperture for shaping the laser beam into, for example, a rectangular shape. 45 is a shaping Apachiya film to be processed with laser light beam shaped by the 44 (Ti film 11a 'or SnO ₂ or ITO film) is projected on the projection lens (objective lens). Reference numeral 46 denotes a light source that emits observation light. Reference numeral 47 denotes a TV camera for observing the shaping aperture 44 and the film to be processed. 48 is a film to be processed (Ti thin film 11a ', SnO ₂ or IT
An XYZ stage on which a substrate having an O film is mounted. Reference numeral 49 denotes a displacement measuring device for measuring the displacement of the XYZ stage 48. Reference numeral 50 denotes a display device for displaying an image observed by the TV camera 47 on the display device 51 or a displacement measuring device 49.
Driving control of the movement (scanning) of the XYZ stage 48 based on the displacement of the XYZ stage 48 measured at
Further, it is a control device for controlling ON / OFF of the laser light source 41. The control device 50 converts the design information (information on the pitch and width of the Ti thin film layer pattern 11a, information on the pitch and width of the transparent electrode 15) input from the input means 52 including a keyboard, a recording medium, a network, and the like. Based on the XYZ stage 48
To calculate the movement (scanning) command of the
And the like can be controlled. In addition, 53
It is a half mirror.

By using the laser removal processing apparatus configured as described above, the control device 50 can control the control device 50 based on the design information (information on the pitch and width of the Ti thin film layer pattern 11a) input from the input means 52. By controlling the movement (scanning) of the XYZ stage 48 in response to the feedback of the displacement of the XYZ stage 48 measured by the displacement measuring device 49, the XYZ stage 48 is shaped between the Ti thin film layer patterns 11a. The laser beam is irradiated and scanned,
The film between the Ti thin film layer patterns 11a is removed by evaporation.
An i thin film layer pattern 11a is formed. By the way, even if some film remains between the Ti thin film layer patterns 11a, when the Cu film is selectively etched, it is removed to form a high-precision Ti thin film layer pattern 11a. Further, regarding the transparent electrode 15, the control device 50
Is the design information (transparent electrode 1) input from the input means 52.
5 (pitch and width information), and based on the feedback of the displacement of the XYZ stage 48 measured by the displacement measuring device 49, the XYZ stage 48 is moved (scanned) and controlled. , Transparent electrode pattern 15
The laser beam shaped during the irradiation is irradiated and scanned, and the film between the transparent electrode patterns 15 is evaporated and removed, whereby the transparent electrode pattern 15 is formed. By the way, the transparent electrode 1
In the case of 5, the lower part is constituted by the front glass substrate 14,
Since this glass substrate does not absorb laser light, the transparent electrode pattern 15 has no remaining film and can be formed exactly as designed.

[0037]

According to the present invention, the resistance of the bus electrode provided on the display electrode of the front substrate and the address electrode provided on the glass substrate of the rear substrate are reduced, and the reactivity with the dielectric layer is prevented. This makes it possible to produce a high-quality gas discharge type display device by manufacturing the product with high accuracy. Further, according to the present invention, the bus electrode provided on the display electrode has a low resistance, has improved adhesion (bonding property) with the display electrode, and has a low reactivity with the dielectric layer. Thus, it is possible to produce a high-quality, low-cost front substrate by reducing manufacturing costs and manufacturing with high precision. Further, according to the present invention, the address electrode provided on the glass substrate,
Low-resistance, improved adhesion (bonding) to the glass substrate, and prevention of reactivity with the dielectric layer.
In addition, there is an effect that a low-cost rear substrate can be realized.

According to the present invention, the surface of the bus electrode provided on the display electrode of the front substrate and the address electrode provided on the glass substrate of the rear substrate are coated with a thin film dielectric layer made of SiO _2. Accordingly, there is an effect that the reactivity to the dielectric layer is further prevented, the disconnection of the electrode is prevented over a long period of use, and the reliability of the electrode can be improved.

[Brief description of the drawings]

FIG. 1 is a view for explaining an embodiment of a structure of an address electrode provided on a back substrate and a bus electrode provided on a front substrate and a manufacturing process thereof according to the present invention.

FIG. 2 is a cross-sectional view showing one embodiment of a gas discharge type display device according to the present invention.

FIG. 3 is a schematic configuration diagram showing an embodiment of a laser beam removal processing apparatus for forming an uppermost Ti thin film layer pattern and a transparent electrode pattern provided on a front substrate in the electrode shown in FIG.

FIG. 4 is a cross-sectional view showing a conventional gas discharge type display device.

FIG. 5 is a view for explaining a process for manufacturing a conventional electrode wiring.

[Explanation of symbols]

10: back glass substrate, 11: address electrode (Cr thin film layer / Cu layer / Ti thin film layer), 11a ... Ti thin film layer pattern, 11a '... Ti thin film, 11b ... Cu layer pattern, 1
1b '... Cu film, 11c ... Cr thin film layer pattern, 11
c ': Cr thin film, 12: thin film dielectric layer, 13: thick dielectric layer, 14: front glass substrate, 15: transparent electrode, 16 ...
Bus electrode, 17: thin-film dielectric layer, 18: thick-film dielectric layer,
19: protective film, 20: sealing material, 21: external circuit electrode,
22: anisotropic conductive sheet, 23: partition wall, 24: phosphor layer.

Continued on the front page (72) Inventor Akira Yabushita 292, Yoshida-cho, Totsuka-ku, Yokohama-shi, Kanagawa Prefecture Inside Hitachi, Ltd.Production Technology Research Institute (72) Inventor Masahito Ijuin 292, Yoshida-cho, Totsuka-ku, Yokohama-shi, Kanagawa, Ltd. Within Hitachi, Ltd. Production Technology Research Laboratory (72) Inventor Tomonori Kawai 292, Yoshida-cho, Totsuka-ku, Yokohama-shi, Kanagawa Prefecture Within Hitachi, Ltd. Production Technology Research Laboratory (72) Inventor Makoto Fukushima 292, Yoshida-cho, Totsuka-ku, Yokohama-shi, Kanagawa Prefecture (72) Inventor Yuzo Taniguchi 4-6 Kanda Surugadai, Chiyoda-ku, Tokyo F-term (reference) 5C027 AA03 5C040 DD01 DD02 DD03

Claims (22)

[Claims] 1. A gas discharge display device comprising: a front substrate having a plurality of first electrodes; and a back substrate having a plurality of second electrodes, wherein the first electrode includes a Ti layer. A gas discharge type display device characterized by the above-mentioned. 2. The method according to claim 1, wherein the first electrode is made of a transparent electrode made of SnO ₂ or ITO, and Cr is formed on the transparent electrode.
A gas discharge type display device comprising a bus electrode formed by laminating a thin film layer / Cu layer / Ti thin film layer. 3. A gas discharge display device comprising: a front substrate having a plurality of first electrodes; and a back substrate having a plurality of second electrodes, wherein the first electrode is formed of SnO ₂ or A gas discharge type display device comprising: a transparent electrode made of ITO; and a bus electrode formed by laminating metal thin film layers made of different materials on both surfaces of a Cu layer on the transparent electrode. 4. A gas discharge type display device according to claim 3, wherein the metal thin film layer of the bus electrode is formed of a Cr thin film layer on the transparent electrode side and a Ti thin film layer on the opposite side. 5. A gas discharge display device comprising a front substrate having a plurality of first electrodes and a back substrate having a plurality of second electrodes, wherein the second electrode includes a Ti layer. A gas discharge type display device characterized by the above-mentioned. 6. A gas discharge type display device wherein the second electrode according to claim 5 is formed by laminating a Cr thin film layer / Cu layer / Ti thin film layer. 7. A gas discharge display device comprising: a front substrate having a plurality of first electrodes; and a back substrate having a plurality of second electrodes, wherein the second electrode is formed of a Cu layer. A gas discharge type display device comprising an address electrode formed by laminating metal thin film layers made of different materials on both surfaces. 8. A gas discharge type display device according to claim 7, wherein the metal thin film layer in the address electrode is formed of a Cr thin film layer on the glass substrate side and a Ti thin film layer on the opposite side. 9. A gas discharge type display device wherein the bus electrode according to claim 2 is formed by selective etching using the Ti thin film layer pattern as a mask. 10. The Ti thin film layer pattern according to claim 9, wherein
A gas discharge type display device formed by laser removal processing on a Ti thin film. 11. A gas discharge type display device wherein the transparent electrode according to claim 2 is formed by laser removal processing on a SnO ₂ or ITO film. 12. A gas discharge type display device wherein the address electrode according to claim 6 is formed by selective etching using the Ti thin film layer pattern as a mask. 13. A gas discharge type display device, wherein the Ti thin film layer pattern according to claim 12 is formed by laser removal processing on the Ti thin film. 14. A transparent substrate comprising a front glass substrate and a plurality of pairs of transparent electrodes formed of ITO or SnO ₂ for generating electric discharge and formed in stripes on the front glass substrate. On each of the electrode group and the pair of transparent electrodes of the transparent electrode group, a bus electrode formed by laminating a metal thin film layer of a different material on both surfaces of a Cu layer in order to reduce the line resistance is formed of a transparent pair. A bus electrode group configured by arranging a plurality of paired pairs corresponding to the electrode sets, and a dielectric layer formed on the front glass substrate including the surfaces of the transparent electrode group and the bus electrode group. A front substrate having a protective film formed on the surface of the dielectric layer; a back glass substrate; and a stripe on the back glass substrate so as to intersect the bus electrode group. Thin metal of different materials An address electrode group composed of address electrodes formed by laminating a layer with multiple parallel,
A dielectric layer formed on the back glass substrate including the surface of the address electrode group, a stripe-shaped or lattice-shaped partition provided on the dielectric layer to secure a discharge space, and the partition A back substrate having a phosphor provided on a dielectric layer between the front substrate and the back substrate, and sealing the front substrate and the back substrate so as to fill a rare gas into a space between the front substrate and the back substrate. A gas discharge type display device comprising: 15. A transparent substrate comprising a front glass substrate and a plurality of pairs of transparent electrodes formed of ITO or SnO ₂ for generating electric discharge and formed in stripes on the front glass substrate. A transparent electrode set that pairs a bus electrode formed by laminating a Cr thin film layer / Cu layer / Ti thin film layer on each of an electrode group and a pair of transparent electrodes of the transparent electrode group to reduce line resistance. A bus electrode group configured by arranging a plurality of pairs corresponding to each other, a dielectric layer formed on the front glass substrate including the surfaces of the transparent electrode group and the bus electrode group, A front substrate having a protective film formed on the surface of the dielectric layer; a back glass substrate; and a Cr thin film layer / C formed on the back glass substrate in a stripe shape so as to intersect the bus electrode group.
an address electrode group formed by arranging a plurality of address electrodes formed by laminating u layers / Ti thin film layers, and a dielectric layer formed on the back glass substrate including the surface of the address electrode group. A stripe-shaped or lattice-shaped partition wall provided to secure a discharge space on the dielectric layer, and a back substrate having a phosphor provided on the dielectric layer between the partition walls, A gas discharge type display device, comprising: a sealing member for sealing the front substrate and the rear substrate so that a rare gas is sealed in a space between the front substrate and the rear substrate. 16. The dielectric layer of the front substrate according to claim 14, wherein at least the bus electrode is made of SiO.
_2. A gas discharge type display device formed by coating with a thin film dielectric film comprising 17. The dielectric layer of the back substrate according to claim 14, wherein at least the address electrode is formed of S
Gas-discharge type display device characterized by being formed by coating a thin film dielectric film made of iO _2. 18. A gas discharge type display device, wherein the bus electrode on the front substrate according to claim 14 or 15 is formed by selective etching using the Ti thin film layer pattern as a mask. 19. A gas discharge type display device wherein the Ti thin film layer pattern according to claim 18 is formed by laser removal processing on the Ti thin film. 20. A gas discharge display device according to claim 14, wherein the address electrodes on the rear substrate are formed by selective etching using the Ti thin film layer pattern as a mask. 21. A gas discharge display device wherein the Ti thin film layer pattern according to claim 20 is formed by laser removal processing on the Ti thin film. 22. A gas discharge type display device, wherein the transparent electrode pattern on the front substrate according to claim 14 or 15 is formed by laser removal processing on an ITO or SnO ₂ film.