JP2000009795A - Probe substrate for bare chip inspection - Google Patents

Probe substrate for bare chip inspection

Info

Publication number
JP2000009795A
JP2000009795A JP10175142A JP17514298A JP2000009795A JP 2000009795 A JP2000009795 A JP 2000009795A JP 10175142 A JP10175142 A JP 10175142A JP 17514298 A JP17514298 A JP 17514298A JP 2000009795 A JP2000009795 A JP 2000009795A
Authority
JP
Japan
Prior art keywords
electrode pad
substrate
probe substrate
bare chip
wiring pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10175142A
Other languages
Japanese (ja)
Inventor
Satoshi Chinda
聡 珍田
Katsumi Suzuki
勝美 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Cable Ltd
Original Assignee
Hitachi Cable Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Cable Ltd filed Critical Hitachi Cable Ltd
Priority to JP10175142A priority Critical patent/JP2000009795A/en
Publication of JP2000009795A publication Critical patent/JP2000009795A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To provide a substrate capable of reducing a contact resistance by surely carrying out an electrical contact, even when a positional deviation between an inspection probe substrate and a semi-conductor chip occurs. SOLUTION: In a probe substrate for bare chip inspection which carries out a separation of a bare chip, a fine wiring pattern 4 is formed on a polyimide tape being a base at a position facing to an electrode pad of a semiconductor chip of an object to be inspected. Then, a projecting portion 8 comprising a plurality of small projections 8-1-8-13 dispersedly disposed in a connection range is provided at a position facing to the electrode pad on the fine wiring pattern 4. One of small projections 3-1-8-13 is positively brought into contact with the electrode pad, and since an oxidation film on the electrode pad is easily broken, sure connection and low contact resistance are obtained.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、ベアチップ検査用
プローブ基板に関し、特に、パッケージングしない単体
の状態において半導体チップの品質検査を行うためのベ
アチップ検査用プローブ基板に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a probe substrate for bare chip inspection, and more particularly to a probe substrate for bare chip inspection for inspecting the quality of a semiconductor chip in a single package without packaging.

【0002】[0002]

【従来の技術】複数個のベアチップを搭載したプリント
基板の状態で、未だパッケージしていないものをMCM
(multi chip module )という。このMCMは、電子機
器の発展とともに、本質的なニーズである軽薄短小に対
応する有効な手段として、機器開発の重要な技術に位置
付けられるようになってきた。しかし、最大の技術的課
題は、品質保証されたベアチップ(KGD:known good
die)選別のための非破壊検査方法であり、そのために
は、半導体チップの電極パッドに接触し、かつ電極パッ
ドとの電気的導通を確保するための部材が設けられた検
査用プローブ基板の開発がポイントになる。
2. Description of the Related Art A printed circuit board on which a plurality of bare chips are mounted and which has not yet been packaged is referred to as an MCM.
(Multi chip module). With the development of electronic devices, the MCM has come to be positioned as an important technology for device development as an effective means for responding to essential needs of light and thin. However, the biggest technical problem is the quality guaranteed bare chip (KGD: known good).
die) This is a non-destructive inspection method for sorting, and for that purpose, development of an inspection probe substrate provided with a member that contacts the electrode pads of the semiconductor chip and ensures electrical conduction with the electrode pads. Is the point.

【0003】従来、検査用プローブ基板には、タングス
テン製の微小針を半導体チップのアルミパッド(電極パ
ッド)の位置に合致させた構成のものが用いられてき
た。しかし、半導体チップの小形化及び多ピン化にとも
なってパッド数が増大し、更に、パッドピッチの縮小化
も著しい。このため、タングステン製の微小針を配置し
たプローブ基板では、その基板自体の製造に大きな制約
が生じている。
Conventionally, an inspection probe substrate having a structure in which tungsten microneedles match the positions of aluminum pads (electrode pads) of a semiconductor chip has been used. However, the number of pads increases as the size of semiconductor chips is reduced and the number of pins is increased, and the pad pitch is also significantly reduced. For this reason, in the probe substrate on which the microneedles made of tungsten are arranged, there is a great restriction on the manufacture of the substrate itself.

【0004】そこで、最近では、テープキャリアと微小
バンプ製造技術を組み合わせたKGD判別用プローブを
組み込んだソケットが開発されている。その構成は、微
細配線の設けられた基板に突起(半導体チップの電極パ
ッドに対応する位置に設けられる)を設けたプローブ基
板を用いている。このプローブ基板と上型との間に半導
体チップを挟み、突起と電極パッドとの位置決めを行っ
て選別検査を実施する。
Therefore, recently, a socket incorporating a KGD discriminating probe which combines a tape carrier and a micro bump manufacturing technique has been developed. The configuration uses a probe substrate provided with protrusions (provided at positions corresponding to electrode pads of a semiconductor chip) on a substrate provided with fine wiring. A semiconductor chip is sandwiched between the probe substrate and the upper die, and the projections and the electrode pads are positioned to perform a screening test.

【0005】[0005]

【発明が解決しようとする課題】しかし、従来のベアチ
ップ検査用プローブ基板によると、プローブ基板組み込
みソケットを用いた場合、以下の様な問題がある。 (i)プローブ基板の突起と半導体チップの電極パッド
とのアライメントは、通常、半導体チップをソケットに
落とし込む機械的な位置合わせであるため、プローブ基
板の製造精度や半導体チップの切断精度等から、半導体
チップの電極パッドとプローブ基板の突起の位置が数1
0μm程度ずれることがある。 (ii)プローブ基板の突起を1個だけ配置した場合、電
極パッドとの接触抵抗の低減を目的にして突起を微小化
すると、数10μmの位置ずれが起きた時、電極パッド
と突起が全く接触しないことがある。逆に、電極パッド
と突起の接触を確実にするために突起を大型化させた場
合、接触の際、電極パッド上の酸化皮膜を突き破ること
ができず、酸化皮膜のために接触抵抗が増大し易くな
る。
However, according to the conventional bare chip inspection probe board, the following problems occur when the probe board built-in socket is used. (I) Since the alignment between the projections of the probe substrate and the electrode pads of the semiconductor chip is usually a mechanical alignment of dropping the semiconductor chip into the socket, the semiconductor substrate is taken into consideration from the manufacturing accuracy of the probe substrate and the cutting accuracy of the semiconductor chip. The position of the electrode pads on the chip and the protrusions on the probe substrate are
It may be shifted by about 0 μm. (Ii) When only one projection on the probe board is arranged, if the projection is miniaturized for the purpose of reducing the contact resistance with the electrode pad, when a displacement of several tens of μm occurs, the electrode pad and the projection are completely in contact. May not. Conversely, if the projection is enlarged to ensure the contact between the electrode pad and the projection, the oxide film on the electrode pad cannot be broken through during contact, and the contact resistance increases due to the oxide film. It will be easier.

【0006】したがって、本発明の目的は、検査用プロ
ーブ基板と半導体チップに位置ずれが起きた場合でも確
実に電気的な接触が行えるようにし、接触抵抗を低減す
ることのできる基板を提供することにある。
SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a substrate capable of surely making electrical contact even when a displacement occurs between an inspection probe substrate and a semiconductor chip and reducing contact resistance. It is in.

【0007】[0007]

【課題を解決するための手段】本発明は、上記の目的を
達成するため、ベアチップの選別を行うためのベアチッ
プ検査用プローブ基板において、検査対象の半導体チッ
プの電極パッドと対向する位置に配線パターンの一部が
形成された絶縁基板と、前記配線パターンの一部に形成
され、前記電極パッドとの接続範囲内に分散配置された
複数の導電性の微小突起部と、を備えることを特徴とす
るベアチップ検査用プローブ基板を提供する。
In order to achieve the above object, the present invention provides a bare chip inspection probe board for selecting bare chips, wherein a wiring pattern is provided at a position facing an electrode pad of a semiconductor chip to be inspected. And a plurality of conductive minute protrusions formed on a part of the wiring pattern and distributed within a connection range with the electrode pad. To provide a probe substrate for bare chip inspection.

【0008】[0008]

【発明の実施の形態】以下、本発明の実施の形態につい
て図面をもとに説明する。本発明のベアチップ検査用プ
ローブ基板は、ポリイミドテープ材等のフレキシブル基
板(絶縁基板)上に銅箔による微細配線及びめっき層に
よる突起部を設けている。突起部はプローブ側の電極と
なるもので、それぞれはベアチップの電極パッドに接触
する。この突起部は、微細配線の所定位置に導通してお
り、微細配線を通して検査装置に接続される。突起部は
複数の微小突起からなり、それぞれの外径は数十μmに
設定される。
Embodiments of the present invention will be described below with reference to the drawings. The probe substrate for bare chip inspection according to the present invention is provided with fine wiring using a copper foil and projections using a plating layer on a flexible substrate (insulating substrate) such as a polyimide tape material. The protruding portions serve as electrodes on the probe side, and each comes into contact with an electrode pad of the bare chip. The projection is electrically connected to a predetermined position of the fine wiring, and is connected to the inspection device through the fine wiring. The protrusion is composed of a plurality of minute protrusions, each having an outer diameter set to several tens of μm.

【0009】このように、本発明のベアチップ検査用プ
ローブ基板は、ベアチップ検査用プローブ基板にフレキ
シブル基板を用い、かつ突起部の微小突起が複数個であ
ることから、数10μm程度の位置ずれがプローブ基板
と半導体チップとの間に生じても、少なくとも幾つかの
微小突起が半導体チップの電極パッドに確実に接触す
る。かつ、それぞれの微小突起は小さいため、電極パッ
ド上の酸化皮膜を確実に突き破って電極パッドの表面に
接触するので、接触抵抗を大幅に低減させることができ
る。フレキシブル基板は、接触させる半導体チップのパ
ッド高さに数10μmのばらつきが生じても、フレキシ
ブル基板自身がその凹凸に応じて変形するため、確実な
接触が可能になる。
As described above, the bare chip inspection probe substrate of the present invention uses a flexible substrate as the bare chip inspection probe substrate and has a plurality of minute projections, so that a displacement of about several tens of μm can be detected by the probe. Even if it occurs between the substrate and the semiconductor chip, at least some of the minute projections reliably contact the electrode pads of the semiconductor chip. In addition, since each of the minute projections is small, the oxide film on the electrode pad is reliably pierced and comes into contact with the surface of the electrode pad, so that the contact resistance can be significantly reduced. Even if the flexible board has a variation of several tens of μm in the pad height of the semiconductor chip to be contacted, the flexible board itself is deformed according to the unevenness, so that reliable contact is possible.

【0010】次に、本発明によるベアチップ検査用プロ
ーブ基板の製造方法について説明する。図1は本発明に
よるベアチップ検査用プローブ基板の製造工程を示す。 〔1〕図1の(a)に示すように、銅箔1に接着剤2に
よりポリイミドテープ3を貼着し、3層構造のテープキ
ャリア材を作成する。
Next, a method for manufacturing a probe substrate for bare chip inspection according to the present invention will be described. FIG. 1 shows a process of manufacturing a probe substrate for bare chip inspection according to the present invention. [1] As shown in FIG. 1A, a polyimide tape 3 is adhered to a copper foil 1 with an adhesive 2 to prepare a tape carrier material having a three-layer structure.

【0011】〔2〕(a)の工程で得たテープキャリア
材の銅箔1面に、ポジ型フォトレジストを塗布する。つ
いで、フォトレジスト塗布面に露光、現像、エッチン
グ、レジスト膜剥離等の一連のフォトファブリケーショ
ンを施し、(b)に示すように、微細配線パターン4を
形成する。 〔3〕この微細配線パターン4上にポジ型の厚付け用レ
ジストを塗布し、(c)に示すように、レジスト膜5を
形成し、これに露光および現像を施し、半導体チップの
アルミパッド(不図示)に合致する位置の微細配線パタ
ーン4上に複数のレジスト開口部6を形成する。レジス
ト開口部6は図1では単一の開口に見えるが、実際は、
図2で示すように、複数の微小口径(例えば、数十μ
m)の微小開口6-1〜6-13 から成る。
[2] A positive photoresist is applied to one surface of the copper foil of the tape carrier material obtained in the step (a). Next, a series of photofabrications such as exposure, development, etching, and resist film peeling are performed on the photoresist-coated surface to form a fine wiring pattern 4 as shown in FIG. [3] A positive-type thickening resist is applied on the fine wiring pattern 4, and a resist film 5 is formed as shown in FIG. A plurality of resist openings 6 are formed on the fine wiring pattern 4 at positions corresponding to (not shown). Although the resist opening 6 appears as a single opening in FIG.
As shown in FIG. 2, a plurality of minute apertures (for example,
m) of small apertures 6 -1 to 6 -13 .

【0012】〔4〕(c)による基板を電解ニッケルめ
っき液に浸漬し、(d)に示すように、レジスト開口部
6がほぼ埋る厚さに該レジスト開口部6内にニッケルめ
っき層7aを施した。 〔5〕(d)による基板を硬質金めっき液中に浸して電
解めっきを行い、ニッケルめっき層7aの表面に、金め
っき膜7bを施した。
[4] The substrate according to (c) is immersed in an electrolytic nickel plating solution, and as shown in (d), a nickel plating layer 7a is formed in the resist opening 6 so as to have a thickness substantially filling the resist opening 6. Was given. [5] The substrate according to (d) was immersed in a hard gold plating solution to perform electrolytic plating, and a gold plating film 7b was applied to the surface of the nickel plating layer 7a.

【0013】〔6〕(e)に示すように、専用剥離液を
用いてレジスト膜5を溶解除去し、微細配線パターン4
上に突起部8(複数の微小突起8-1〜8-13 を有する)
を図3で示すように形成した。このようにして作成した
基板を所望のサイズに切断し、プローブソケットに設置
し、ベアチップ検査用プローブ基板を完成させた。図2
は本発明に係るレジスト開口部6の詳細を示す。この状
態は、図1の(c)の工程におけるものであり、レジス
ト開口部6の形状を示す。1つの突起部は円形を成すよ
うに微細配線パターン4により形成され、この円形の微
細配線パターン4上にレジスト膜5が設けられている。
レジスト膜5上には、複数のレジスト開口部6が設けら
れている。レジスト開口部6のそれぞれは、分散配置さ
れた微小開口6-1〜6-13 から成り、図1の(e)の工
程が終了すると、微小開口6 -1〜6-13 のそれぞれに突
起部8の微小突起8-1〜8-13 が形成される。
[6] As shown in FIG.
The resist film 5 is used to dissolve and remove the fine wiring pattern 4.
The protrusions 8 (a plurality of minute protrusions 8)-1~ 8-13Has)
Was formed as shown in FIG. Created in this way
Cut the board to the desired size and place it in the probe socket
Then, a probe substrate for bare chip inspection was completed. FIG.
Shows details of the resist opening 6 according to the present invention. This state
The state is in the step of FIG.
6 shows the shape of the opening 6. One protrusion is a circle
Formed by the fine wiring pattern 4 as shown in FIG.
A resist film 5 is provided on the fine wiring pattern 4.
A plurality of resist openings 6 are provided on the resist film 5.
Have been. Each of the resist openings 6 is distributed and arranged.
Small opening 6-1~ 6-13And the process shown in FIG.
When the process is completed, the minute opening 6 -1~ 6-13Protrude into each of
Micro projections 8 of raised portion 8-1~ 8-13Is formed.

【0014】図3は本発明に係る突起部8の詳細を示
す。突起部8は、図2に示した13個の微小開口6-1
-13 のそれぞれに設けられた微小突起8-1〜8-13
ら成る。なお、レジスト開口部6を形成する工程におい
ては、上記した厚付け用レジストに代えて、ドライフィ
ルムレジストを用いてもよい。
FIG. 3 shows details of the projection 8 according to the present invention. The protruding portion 8 has the thirteen minute openings 6 -1 to 6 shown in FIG.
6 -13 , each of which is composed of minute projections 8 -1 to 8 -13 . In the step of forming the resist opening 6, a dry film resist may be used instead of the thickening resist described above.

【0015】また、突起部8の形成は、上記した金めっ
き/ニッケルめっきの組み合わせに限定されるものでは
なく、パラジウム、ロジウム、ニッケル合金、ダイヤモ
ンド、シリカなどの硬質粉末を含有した複合めっき皮膜
など、多様な組み合わせの使用が可能である。
The formation of the projections 8 is not limited to the above-described combination of gold plating / nickel plating, but may be a composite plating film containing a hard powder such as palladium, rhodium, nickel alloy, diamond, or silica. Various combinations can be used.

【0016】[0016]

【実施例】次に、本発明の実施例について説明する。ま
ず、図1の(a)に示したように、厚さ銅箔18μm、
接着剤12μm、ポリイミドテープ25μmからなる3
層構成のテープキャリア材を作成した。ついで、銅箔面
にポジ型フォトレジストを塗布し、このポジ型フォトレ
ジスト(例えば、東京応化株式会社製のPMER)に露
光、現像、エッチング、レジスト剥膜等の一連のフォト
ファブリケーションを施して微細配線パターンを形成し
た。更に、微細配線パターン上にポジ型厚付け用レジス
トを厚さ20μmに塗布した後、露光および現像を行
い、チップのアルミパッドに合致する位置の微細配線上
に、レジスト開口部を設けた。
Next, an embodiment of the present invention will be described. First, as shown in FIG.
3 consisting of 12 μm adhesive and 25 μm polyimide tape
A tape carrier material having a layer structure was prepared. Next, a positive photoresist is applied to the copper foil surface, and the positive photoresist (for example, PMER manufactured by Tokyo Ohka Co., Ltd.) is subjected to a series of photofabrications such as exposure, development, etching, and resist stripping. A fine wiring pattern was formed. Further, after applying a positive type thickening resist to a thickness of 20 μm on the fine wiring pattern, exposure and development were performed, and a resist opening was provided on the fine wiring at a position corresponding to the aluminum pad of the chip.

【0017】次に、上記基板を電解ニッケルめっき液に
浸漬し、レジスト開口部に厚さ約20μmのニッケルめ
っきを施した。このニッケルめっきは、開口部がほぼ埋
まる厚さである。ついで、硬質金めっき液中でニッケル
めっき膜の上に、電解めっきにより厚さ約0.5μmの
金めっき膜を設けた。この後、専用剥離液を用いてレジ
スト膜を溶解除去した。このようにして作成した先端突
起付き微細配線パターン形成基板を適切なサイズに切断
する。これをプローブソケットに設置し、ベアチップ検
査用プローブ基板を完成させた。こうして完成させたベ
アチップ検査用プローブ基板は、本発明の目的を達成し
ていることが確認された。
Next, the substrate was immersed in an electrolytic nickel plating solution, and nickel plating having a thickness of about 20 μm was applied to the resist opening. This nickel plating has a thickness that almost completely fills the opening. Next, a gold plating film having a thickness of about 0.5 μm was provided by electrolytic plating on the nickel plating film in the hard gold plating solution. Thereafter, the resist film was dissolved and removed using a dedicated stripping solution. The substrate having the fine wiring pattern with the protrusions formed in this manner is cut into an appropriate size. This was set in a probe socket, and a probe substrate for bare chip inspection was completed. It was confirmed that the probe substrate for bare chip inspection completed in this way achieved the object of the present invention.

【0018】本発明者らの検討によれば、突起部8の微
小突起8-1〜8-13 の1個のサイズは、約100μm以
下の直径にしたときに好ましい結果を得た。これより直
径が大きくなると、電極パッドへの接触力が弱くなり、
電極パッド上の酸化膜を破壊できないことがあった。
According to the study by the present inventors, a preferable result was obtained when one of the minute projections 8 -1 to 8 -13 of the projection 8 had a diameter of about 100 μm or less. If the diameter is larger than this, the contact force to the electrode pad will be weaker,
In some cases, the oxide film on the electrode pad could not be destroyed.

【0019】[0019]

【発明の効果】以上より明らかな如く、本発明によれ
ば、半導体チップの電極パッドに接触する突起部を分散
配置した複数の微小突起により構成したので、プローブ
基板とチップとの間に位置ずれが生じても、確実に接触
させることができる。微小突起は、電極パッド上の酸化
皮膜を確実に突き破ることができるので、接触抵抗を大
幅に低下させることができる。
As is apparent from the above description, according to the present invention, since the projections in contact with the electrode pads of the semiconductor chip are constituted by a plurality of dispersed small projections, the positional displacement between the probe substrate and the chip is reduced. Can be surely brought into contact with each other. Since the minute projection can surely break through the oxide film on the electrode pad, the contact resistance can be significantly reduced.

【0020】また、絶縁基板にフレキシブル基板を用い
ることにより、接触させる半導体チップの電極パッドの
高さにばらつきが生じても、フレキシブル基板が電極パ
ッドの凹凸に応じて変形するので、確実な接触が可能に
なる。
Further, by using a flexible substrate as the insulating substrate, even if the height of the electrode pads of the semiconductor chip to be contacted varies, the flexible substrate is deformed in accordance with the unevenness of the electrode pads. Will be possible.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明のベアチップ検査用プローブ基板の製造
工程を示す説明図である。
FIG. 1 is an explanatory diagram showing a manufacturing process of a probe substrate for bare chip inspection according to the present invention.

【図2】本発明に係るレジスト開口部の詳細を示す平面
図である。
FIG. 2 is a plan view showing details of a resist opening according to the present invention.

【図3】本発明に係る突起部の詳細を示す平面図であ
る。
FIG. 3 is a plan view showing details of a protrusion according to the present invention.

【符号の説明】[Explanation of symbols]

1 銅箔 2 接着剤 3 ポリイミドテープ 4 微細配線パターン 5 レジスト膜 6 レジスト開口部 6-1〜6-13 微小開口 7a ニッケルめっき層 7b 金めっき層 8 突起部 8-1〜8-13 微小突起Reference Signs List 1 copper foil 2 adhesive 3 polyimide tape 4 fine wiring pattern 5 resist film 6 resist opening 6 -1 to 6 -13 minute opening 7a nickel plating layer 7b gold plating layer 8 protrusion 8 -1 to 8 -13 minute projection

フロントページの続き Fターム(参考) 2G003 AG03 AG08 AG12 2G011 AA16 AB06 AC14 AE03 AE11 4M106 AA02 AD01 AD08 AD09 AD26 BA01 DD23 Continued on the front page F-term (reference) 2G003 AG03 AG08 AG12 2G011 AA16 AB06 AC14 AE03 AE11 4M106 AA02 AD01 AD08 AD09 AD26 BA01 DD23

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 ベアチップの選別を行うためのベアチッ
プ検査用プローブ基板において、 検査対象の半導体チップの電極パッドと対向する位置に
配線パターンの一部が形成された絶縁基板と、 前記配線パターンの一部に形成され、前記電極パッドと
の接続範囲内に分散配置された複数の導電性の微小突起
部と、を備えることを特徴とするベアチップ検査用プロ
ーブ基板。
1. A bare chip inspection probe substrate for selecting bare chips, comprising: an insulating substrate having a part of a wiring pattern formed at a position facing an electrode pad of a semiconductor chip to be inspected; And a plurality of conductive minute projections dispersed in a connection range with the electrode pad.
【請求項2】 前記絶縁基板は、フレキシブル基板であ
ることを特徴とする請求項1記載のベアチップ検査用プ
ローブ基板。
2. The probe substrate according to claim 1, wherein the insulating substrate is a flexible substrate.
JP10175142A 1998-06-22 1998-06-22 Probe substrate for bare chip inspection Pending JP2000009795A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10175142A JP2000009795A (en) 1998-06-22 1998-06-22 Probe substrate for bare chip inspection

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10175142A JP2000009795A (en) 1998-06-22 1998-06-22 Probe substrate for bare chip inspection

Publications (1)

Publication Number Publication Date
JP2000009795A true JP2000009795A (en) 2000-01-14

Family

ID=15991030

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10175142A Pending JP2000009795A (en) 1998-06-22 1998-06-22 Probe substrate for bare chip inspection

Country Status (1)

Country Link
JP (1) JP2000009795A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007324226A (en) * 2006-05-30 2007-12-13 Mitsumi Electric Co Ltd Substrate and semiconductor device inspecting apparatus using the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007324226A (en) * 2006-05-30 2007-12-13 Mitsumi Electric Co Ltd Substrate and semiconductor device inspecting apparatus using the same

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