JP1688601S - - Google Patents

Info

Publication number
JP1688601S
JP1688601S JPD2020-851F JP2020000851F JP1688601S JP 1688601 S JP1688601 S JP 1688601S JP 2020000851 F JP2020000851 F JP 2020000851F JP 1688601 S JP1688601 S JP 1688601S
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JPD2020-851F
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Application granted granted Critical
Publication of JP1688601S publication Critical patent/JP1688601S/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JPD2020-851F 2019-09-19 2020-01-20 Active JP1688601S (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US29/706,320 USD956005S1 (en) 2019-09-19 2019-09-19 Shaped electrode

Publications (1)

Publication Number Publication Date
JP1688601S true JP1688601S (zh) 2021-06-28

Family

ID=76542123

Family Applications (1)

Application Number Title Priority Date Filing Date
JPD2020-851F Active JP1688601S (zh) 2019-09-19 2020-01-20

Country Status (3)

Country Link
US (1) USD956005S1 (zh)
JP (1) JP1688601S (zh)
TW (1) TWD207500S (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD816641S1 (en) * 2015-10-30 2018-05-01 Lutron Electronics Co., Inc. Illuminated antenna cover
USD1018283S1 (en) * 2020-09-02 2024-03-19 Joseph Hamad Cooling insert for cast
USD983151S1 (en) * 2020-09-09 2023-04-11 Kokusai Electric Corporation Exhaust liner for reaction tube

Family Cites Families (81)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3025834A (en) * 1959-04-08 1962-03-20 American Stencil Mfg Co Double-end ball-point pen
US4107830A (en) * 1977-05-02 1978-08-22 Thomson George V Rolling pin construction
USD254912S (en) * 1978-05-16 1980-05-06 Pilot Man-Nen Hitsu Kabushiki Kaisha Fountain pen
IT1170053B (it) * 1983-12-23 1987-06-03 Oronzio De Nora Sa Anodo dispersore preimpaccato con backfill in struttura flessibile per protezione catodica con correnti impresse
USD282753S (en) * 1983-12-27 1986-02-25 The Parker Pen Company Writing instrument with a striped body
US5196171A (en) * 1991-03-11 1993-03-23 In-Vironmental Integrity, Inc. Electrostatic vapor/aerosol/air ion generator
USD335347S (en) * 1991-04-26 1993-05-04 Hu-Friedy Mfg. Co., Inc. Dental instrument handle
JPH0888074A (ja) 1994-09-16 1996-04-02 Kazuo Okano イオン発生装置用放電電極
JP3317183B2 (ja) 1997-03-27 2002-08-26 日新電機株式会社 ４ロッドｒｆｑ加速器のｒｆｑ電極
USD407157S (en) * 1997-06-24 1999-03-23 Empi, Inc. Vaginal electrode
USD412531S (en) * 1997-11-13 1999-08-03 Debra Sue Blair Scratcher pen
USD439337S1 (en) * 1998-02-06 2001-03-20 Michael Harold Jones Surgical needle holder
US6130436A (en) 1998-06-02 2000-10-10 Varian Semiconductor Equipment Associates, Inc. Acceleration and analysis architecture for ion implanter
EP1046183B1 (en) 1998-09-24 2004-04-07 Koninklijke Philips Electronics N.V. Ion implantation device arranged to select neutral ions from the ion beam and methode
US6441382B1 (en) 1999-05-21 2002-08-27 Axcelis Technologies, Inc. Deceleration electrode configuration for ultra-low energy ion implanter
US6998625B1 (en) 1999-06-23 2006-02-14 Varian Semiconductor Equipment Associates, Inc. Ion implanter having two-stage deceleration beamline
JP3727047B2 (ja) 1999-07-30 2005-12-14 住友イートンノバ株式会社 イオン注入装置
US6710358B1 (en) 2000-02-25 2004-03-23 Advanced Ion Beam Technology, Inc. Apparatus and method for reducing energy contamination of low energy ion beams
US6946667B2 (en) 2000-03-01 2005-09-20 Advanced Ion Beam Technology, Inc. Apparatus to decelerate and control ion beams to improve the total quality of ion implantation
US6489622B1 (en) 2000-03-01 2002-12-03 Advanced Ion Beam Technology, Inc. Apparatus for decelerating ion beams with minimal energy contamination
EP1339100A1 (en) 2000-12-01 2003-08-27 Ebara Corporation Inspection method and apparatus using electron beam, and device production method using it
USD446213S1 (en) * 2001-01-04 2001-08-07 Intel Corporation Stylus
JP3738734B2 (ja) 2002-02-06 2006-01-25 日新電機株式会社 静電加速管およびそれを備えるイオン注入装置
US6777696B1 (en) 2003-02-21 2004-08-17 Axcelis Technologies, Inc. Deflecting acceleration/deceleration gap
USD497388S1 (en) * 2004-02-25 2004-10-19 Premium Collection Industries Limited Four-in-one pen
US7022984B1 (en) 2005-01-31 2006-04-04 Axcelis Technologies, Inc. Biased electrostatic deflector
JP2006216396A (ja) 2005-02-04 2006-08-17 Hitachi High-Technologies Corp 荷電粒子線装置
US7279687B2 (en) 2005-08-26 2007-10-09 Varian Semiconductor Equipment Associates, Inc. Technique for implementing a variable aperture lens in an ion implanter
US7339179B2 (en) 2005-11-15 2008-03-04 Varian Semiconductor Equipment Associates, Inc. Technique for providing a segmented electrostatic lens in an ion implanter
USD564462S1 (en) * 2005-12-27 2008-03-18 Tokyo Electron Limited RF electrode for a process tube of semiconductor manufacturing apparatus
KR20090010067A (ko) 2006-04-26 2009-01-28 액셀리스 테크놀러지스, 인크. 이온 빔 미립자들의 포획 및 이온 빔 포커싱을 위한 방법 및 시스템
USD572673S1 (en) * 2006-07-13 2008-07-08 Ebara Corporation Anode shaft
US7579605B2 (en) 2006-09-29 2009-08-25 Varian Semiconductor Equipment Associates, Inc. Multi-purpose electrostatic lens for an ion implanter system
USD576647S1 (en) * 2006-10-06 2008-09-09 Nuflare Technology, Inc. Nozzle for vapor-phase epitaxial equipment
US7635850B2 (en) 2006-10-11 2009-12-22 Nissin Ion Equipment Co., Ltd. Ion implanter
US7579602B2 (en) 2006-12-22 2009-08-25 Varian Semiconductor Equipment Associates, Inc. Ion implantation with a collimator magnet and a neutral filter magnet
US7851767B2 (en) 2007-03-21 2010-12-14 Advanced Ion Beam Technology, Inc. Beam control assembly for ribbon beam of ions for ion implantation
US7888653B2 (en) 2009-01-02 2011-02-15 Varian Semiconductor Equipment Associates, Inc. Techniques for independently controlling deflection, deceleration and focus of an ion beam
US8089050B2 (en) 2009-11-19 2012-01-03 Twin Creeks Technologies, Inc. Method and apparatus for modifying a ribbon-shaped ion beam
US8129695B2 (en) 2009-12-28 2012-03-06 Varian Semiconductor Equipment Associates, Inc. System and method for controlling deflection of a charged particle beam within a graded electrostatic lens
US8395070B2 (en) * 2010-04-01 2013-03-12 American Torch Tip Electrical contact point device for use in a plasma arc cutting torch
US8604418B2 (en) 2010-04-06 2013-12-10 Axcelis Technologies, Inc. In-vacuum beam defining aperture cleaning for particle reduction
USD653760S1 (en) * 2010-08-31 2012-02-07 Johnson Dennis E J Vapor ion plasma generator
US8519353B2 (en) 2010-12-29 2013-08-27 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for controlling an asymmetric electrostatic lens about a central ray trajectory of an ion beam
USD702654S1 (en) * 2012-05-29 2014-04-15 Asm Ip Holding B.V. Plasma power transfer rod for a semiconductor deposition apparatus
US8907295B2 (en) 2012-08-01 2014-12-09 Varian Semiconductor Equipment Associates, Inc. Hybrid electrostatic lens with increased natural frequency
JP6045266B2 (ja) 2012-09-18 2016-12-14 リンテック株式会社 イオン注入装置
US20150144810A1 (en) 2013-11-27 2015-05-28 Varian Semiconductor Equipment Associates, Inc. Triple mode electrostatic collimator
JP6253375B2 (ja) 2013-12-02 2017-12-27 住友重機械イオンテクノロジー株式会社 イオン注入装置
USD715235S1 (en) * 2014-03-05 2014-10-14 Alan G Ellman Fixed position RF electrode
JP6257411B2 (ja) 2014-03-27 2018-01-10 住友重機械イオンテクノロジー株式会社 イオン注入装置、最終エネルギーフィルター、及びイオン注入方法
US9515166B2 (en) 2014-04-10 2016-12-06 Applied Materials, Inc. Selective atomic layer deposition process utilizing patterned self assembled monolayers for 3D structure semiconductor applications
US10087573B1 (en) * 2014-05-08 2018-10-02 Regina B. Casperson Elastomeric tubular casings for drawstrings and a method of laundering accessories therewith
JP6278835B2 (ja) 2014-05-26 2018-02-14 住友重機械イオンテクノロジー株式会社 イオン注入装置
JP6161571B2 (ja) 2014-05-26 2017-07-12 住友重機械イオンテクノロジー株式会社 イオン注入装置
US9508831B2 (en) 2014-06-19 2016-11-29 Applied Materials, Inc. Method for fabricating vertically stacked nanowires for semiconductor applications
US9281162B2 (en) 2014-06-27 2016-03-08 Advanced Ion Beam Technology, Inc. Single bend energy filter for controlling deflection of charged particle beam
TWD173861S (zh) 2014-12-02 2016-02-21 日本麥克隆尼股份有限公司 電性接觸元件
US9679739B2 (en) 2014-12-26 2017-06-13 Axcelis Technologies, Inc. Combined electrostatic lens system for ion implantation
US9640385B2 (en) 2015-02-16 2017-05-02 Applied Materials, Inc. Gate electrode material residual removal process
US10522330B2 (en) 2015-06-12 2019-12-31 Varian Semiconductor Equipment Associates, Inc. In-situ plasma cleaning of process chamber components
US9721750B2 (en) 2015-07-28 2017-08-01 Varian Semiconductor Equipment Associates, Inc. Controlling contamination particle trajectory from a beam-line electrostatic element
US9595451B1 (en) 2015-10-19 2017-03-14 Applied Materials, Inc. Highly selective etching methods for etching dielectric materials
US9653310B1 (en) 2015-11-11 2017-05-16 Applied Materials, Inc. Methods for selective etching of a silicon material
US9978556B2 (en) 2015-12-11 2018-05-22 Varian Semiconductor Equipment Associates, Inc. Parallelizing electrostatic acceleration/deceleration optical element
US9831097B2 (en) 2015-12-18 2017-11-28 Applied Materials, Inc. Methods for selective etching of a silicon material using HF gas without nitrogen etchants
TWM536411U (zh) * 2016-04-21 2017-02-01 瓦里安半導體設備公司 用於離子植入機中的靜電透鏡
TWD179921S (zh) 2016-05-23 2016-12-01 艾提那科技股份有限公司 離子源真空鍍膜系統中和器之陰極電極
US10497578B2 (en) 2016-07-22 2019-12-03 Applied Materials, Inc. Methods for high temperature etching a material layer using protection coating
US10410844B2 (en) 2016-12-09 2019-09-10 Varian Semiconductor Equipment Associates, Inc. RF clean system for electrostatic elements
US10068758B2 (en) 2017-01-27 2018-09-04 Varian Semiconductor Equipment Associates, Inc. Ion mass separation using RF extraction
CN110431650B (zh) 2017-03-21 2022-03-01 瓦里安半导体设备公司 离子植入系统及其方法以及静电过滤器的导电束光学器件
TWD189296S (zh) 2017-05-12 2018-03-21 晶元光電股份有限公司 發光二極體之部分
JP1621478S (zh) 2017-11-17 2019-01-07
US10468224B2 (en) 2017-12-21 2019-11-05 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for controlling ion beam properties using energy filter
JP1622970S (zh) 2018-02-02 2019-01-28
USD901998S1 (en) * 2018-05-18 2020-11-17 Robert Bosch Gmbh Hot-melt pencil
US10665415B1 (en) 2018-11-06 2020-05-26 Applied Materials, Inc. Apparatus and method for controlling ion beam properties using electrostatic filter
US10886098B2 (en) 2018-11-20 2021-01-05 Applied Materials, Inc. Electrostatic filter and ion implanter having asymmetric electrostatic configuration
US10937624B2 (en) 2018-11-20 2021-03-02 Applied Materials, Inc. Apparatus and method for controlling ion beam using electrostatic filter
US20210090845A1 (en) * 2019-09-19 2021-03-25 Applied Materials, Inc. Electrostatic filter with shaped electrodes

Also Published As

Publication number Publication date
TWD207500S (zh) 2020-10-01
USD956005S1 (en) 2022-06-28

Similar Documents

Publication Publication Date Title
BR112019017762A2 (zh)
BR112021017339A2 (zh)
BR112021018450A2 (zh)
BR112019016141A2 (zh)
BR112021017939A2 (zh)
BR112021017738A2 (zh)
BR112021017892A2 (zh)
BR112021017782A2 (zh)
AU2020104490A5 (zh)
BR112021017637A2 (zh)
BR112021008711A2 (zh)
BR112019016142A2 (zh)
BR112019016138A2 (zh)
BR112021018168A2 (zh)
BR112021017728A2 (zh)
BR112021018452A2 (zh)
BR112021017234A2 (zh)
BR112021017355A2 (zh)
BR112021017703A2 (zh)
BR112021017173A2 (zh)
BR112021018102A2 (zh)
BR112021018584A2 (zh)
BR112021017083A2 (zh)
BR112021015080A2 (zh)
BR112021012348A2 (zh)