ITRM970431A0 - - Google Patents

Info

Publication number
ITRM970431A0
ITRM970431A0 ITRM970431A ITRM970431A ITRM970431A0 IT RM970431 A0 ITRM970431 A0 IT RM970431A0 IT RM970431 A ITRM970431 A IT RM970431A IT RM970431 A ITRM970431 A IT RM970431A IT RM970431 A0 ITRM970431 A0 IT RM970431A0
Authority
IT
Italy
Application number
ITRM970431A
Other languages
Italian (it)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to IT97RM000431A priority Critical patent/IT1293536B1/it
Publication of ITRM970431A0 publication Critical patent/ITRM970431A0/it
Priority to JP10232206A priority patent/JPH11233515A/ja
Priority to EP98305603A priority patent/EP0897193A3/en
Priority to KR1019980028388A priority patent/KR19990013850A/ko
Publication of ITRM970431A1 publication Critical patent/ITRM970431A1/it
Application granted granted Critical
Publication of IT1293536B1 publication Critical patent/IT1293536B1/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0112—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors using conductive layers comprising silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6923—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/092—Manufacture or treatment of dielectric parts thereof by smoothing the dielectric parts
IT97RM000431A 1997-07-14 1997-07-14 Procedimento di metallizzazione multilivello ad alta planarizzazione per dispositivi a semiconduttore IT1293536B1 (it)

Priority Applications (4)

Application Number Priority Date Filing Date Title
IT97RM000431A IT1293536B1 (it) 1997-07-14 1997-07-14 Procedimento di metallizzazione multilivello ad alta planarizzazione per dispositivi a semiconduttore
JP10232206A JPH11233515A (ja) 1997-07-14 1998-07-14 半導体装置の多層配線平坦化方法
EP98305603A EP0897193A3 (en) 1997-07-14 1998-07-14 Process of making a multilevel metallization scheme with high planarization degree
KR1019980028388A KR19990013850A (ko) 1997-07-14 1998-07-14 반도체 장치에 대한 고 평탄화 멀티 레벨 금속화 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT97RM000431A IT1293536B1 (it) 1997-07-14 1997-07-14 Procedimento di metallizzazione multilivello ad alta planarizzazione per dispositivi a semiconduttore

Publications (3)

Publication Number Publication Date
ITRM970431A0 true ITRM970431A0 (https=) 1997-07-14
ITRM970431A1 ITRM970431A1 (it) 1999-01-14
IT1293536B1 IT1293536B1 (it) 1999-03-01

Family

ID=11405176

Family Applications (1)

Application Number Title Priority Date Filing Date
IT97RM000431A IT1293536B1 (it) 1997-07-14 1997-07-14 Procedimento di metallizzazione multilivello ad alta planarizzazione per dispositivi a semiconduttore

Country Status (4)

Country Link
EP (1) EP0897193A3 (https=)
JP (1) JPH11233515A (https=)
KR (1) KR19990013850A (https=)
IT (1) IT1293536B1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN120261401B (zh) * 2025-05-30 2025-09-26 合肥晶合集成电路股份有限公司 半导体结构及其制造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5063175A (en) * 1986-09-30 1991-11-05 North American Philips Corp., Signetics Division Method for manufacturing a planar electrical interconnection utilizing isotropic deposition of conductive material
US5612254A (en) * 1992-06-29 1997-03-18 Intel Corporation Methods of forming an interconnect on a semiconductor substrate
US5366911A (en) * 1994-05-11 1994-11-22 United Microelectronics Corporation VLSI process with global planarization
JP2836529B2 (ja) * 1995-04-27 1998-12-14 日本電気株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
KR19990013850A (ko) 1999-02-25
EP0897193A2 (en) 1999-02-17
EP0897193A3 (en) 1999-08-04
ITRM970431A1 (it) 1999-01-14
IT1293536B1 (it) 1999-03-01
JPH11233515A (ja) 1999-08-27

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Legal Events

Date Code Title Description
0001 Granted