ITRM920026A1 - REFERENCE VOLTAGE GENERATION CIRCUIT. - Google Patents

REFERENCE VOLTAGE GENERATION CIRCUIT.

Info

Publication number
ITRM920026A1
ITRM920026A1 IT000026A ITRM920026A ITRM920026A1 IT RM920026 A1 ITRM920026 A1 IT RM920026A1 IT 000026 A IT000026 A IT 000026A IT RM920026 A ITRM920026 A IT RM920026A IT RM920026 A1 ITRM920026 A1 IT RM920026A1
Authority
IT
Italy
Prior art keywords
reference voltage
generation circuit
voltage generation
circuit
voltage
Prior art date
Application number
IT000026A
Other languages
Italian (it)
Inventor
Yeong-Taek Lee
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of ITRM920026A0 publication Critical patent/ITRM920026A0/en
Publication of ITRM920026A1 publication Critical patent/ITRM920026A1/en
Application granted granted Critical
Publication of IT1258344B publication Critical patent/IT1258344B/en

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
ITRM920026A 1991-06-19 1992-01-16 REFERENCE VOLTAGE GENERATION CIRCUIT. IT1258344B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910010193A KR930001577A (en) 1991-06-19 1991-06-19 Reference voltage generator

Publications (3)

Publication Number Publication Date
ITRM920026A0 ITRM920026A0 (en) 1992-01-16
ITRM920026A1 true ITRM920026A1 (en) 1993-07-16
IT1258344B IT1258344B (en) 1996-02-26

Family

ID=19316014

Family Applications (1)

Application Number Title Priority Date Filing Date
ITRM920026A IT1258344B (en) 1991-06-19 1992-01-16 REFERENCE VOLTAGE GENERATION CIRCUIT.

Country Status (7)

Country Link
JP (1) JPH04373158A (en)
KR (1) KR930001577A (en)
DE (1) DE4139163A1 (en)
FR (1) FR2678081A1 (en)
GB (1) GB2256949A (en)
IT (1) IT1258344B (en)
TW (1) TW208097B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR940007298B1 (en) * 1992-05-30 1994-08-12 삼성전자 주식회사 Reference voltage generating circuit using cmos transistor
KR970010284B1 (en) * 1993-12-18 1997-06-23 Samsung Electronics Co Ltd Internal voltage generator of semiconductor integrated circuit
DE19618914C1 (en) * 1996-05-10 1997-08-14 Siemens Ag Reference potential generator for analog integrated circuits
KR100333547B1 (en) * 1999-06-29 2002-04-24 박종섭 Reference voltage generator
DE10211912B4 (en) 2002-03-18 2004-02-05 Infineon Technologies Ag Integrated circuit and method for controlling a power supply thereof
DE102011089402B4 (en) * 2011-04-28 2015-07-16 Zentrum Mikroelektronik Dresden Ag Arrangement and method for generating an output voltage

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5849449B2 (en) * 1977-08-03 1983-11-04 大和製罐株式会社 Object conveyance method using air flow
US4277739A (en) * 1979-06-01 1981-07-07 National Semiconductor Corporation Fixed voltage reference circuit
JPS6089956A (en) * 1983-10-24 1985-05-20 Toshiba Corp Semiconductor device
US4553083A (en) * 1983-12-01 1985-11-12 Advanced Micro Devices, Inc. Bandgap reference voltage generator with VCC compensation
JPS60229125A (en) * 1984-04-26 1985-11-14 Toshiba Corp Voltage output circuit
JPS6132565A (en) * 1984-07-25 1986-02-15 Nec Corp Mos integrated circuit
JPS61172364A (en) * 1985-09-27 1986-08-04 Nec Corp Semiconductor device to which constant voltage circuit is formed
US4795918A (en) * 1987-05-01 1989-01-03 Fairchild Semiconductor Corporation Bandgap voltage reference circuit with an npn current bypass circuit
US4849933A (en) * 1987-05-06 1989-07-18 Advanced Micro Devices, Inc. Bipolar programmable logic array
US4795961A (en) * 1987-06-10 1989-01-03 Unitrode Corporation Low-noise voltage reference
JPS6455623A (en) * 1987-08-27 1989-03-02 Fujitsu Ltd Reference voltage generating circuit
US4906863A (en) * 1988-02-29 1990-03-06 Texas Instruments Incorporated Wide range power supply BiCMOS band-gap reference voltage circuit
DE4005756A1 (en) * 1989-04-01 1990-10-04 Bosch Gmbh Robert Monolithically integrated precision reference voltage source - has parabolic course of temp. relation of reference voltage linearised without additional components

Also Published As

Publication number Publication date
GB2256949A (en) 1992-12-23
DE4139163A1 (en) 1992-12-24
JPH04373158A (en) 1992-12-25
FR2678081A1 (en) 1992-12-24
ITRM920026A0 (en) 1992-01-16
TW208097B (en) 1993-06-21
GB9124287D0 (en) 1992-01-08
KR930001577A (en) 1993-01-16
IT1258344B (en) 1996-02-26

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Legal Events

Date Code Title Description
0001 Granted