ITMI921295A1 - SEMICONDUCTOR MEMORY DEVICE AND PROCESS FOR ITS MANUFACTURE - Google Patents

SEMICONDUCTOR MEMORY DEVICE AND PROCESS FOR ITS MANUFACTURE

Info

Publication number
ITMI921295A1
ITMI921295A1 IT001295A ITMI921295A ITMI921295A1 IT MI921295 A1 ITMI921295 A1 IT MI921295A1 IT 001295 A IT001295 A IT 001295A IT MI921295 A ITMI921295 A IT MI921295A IT MI921295 A1 ITMI921295 A1 IT MI921295A1
Authority
IT
Italy
Prior art keywords
manufacture
memory device
semiconductor memory
semiconductor
memory
Prior art date
Application number
IT001295A
Other languages
Italian (it)
Inventor
Takao Yasue
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of ITMI921295A0 publication Critical patent/ITMI921295A0/en
Publication of ITMI921295A1 publication Critical patent/ITMI921295A1/en
Application granted granted Critical
Publication of IT1255293B publication Critical patent/IT1255293B/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Dicing (AREA)
ITMI921295A 1991-05-27 1992-05-26 SEMICONDUCTOR MEMORY DEVICE AND PROCEDURE FOR ITS MANUFACTURE IT1255293B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP12150391 1991-05-27
JP4079908A JPH05109984A (en) 1991-05-27 1992-04-01 Semiconductor device and its manufacture

Publications (3)

Publication Number Publication Date
ITMI921295A0 ITMI921295A0 (en) 1992-05-26
ITMI921295A1 true ITMI921295A1 (en) 1993-11-26
IT1255293B IT1255293B (en) 1995-10-26

Family

ID=26420894

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI921295A IT1255293B (en) 1991-05-27 1992-05-26 SEMICONDUCTOR MEMORY DEVICE AND PROCEDURE FOR ITS MANUFACTURE

Country Status (4)

Country Link
JP (1) JPH05109984A (en)
KR (1) KR920022511A (en)
DE (1) DE4217420A1 (en)
IT (1) IT1255293B (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW447112B (en) * 1998-07-02 2001-07-21 Siemens Ag Integrated circuit-arrangement, method for its production and wafer with some integrated circuit-arrangements
US6674134B2 (en) 1998-10-15 2004-01-06 International Business Machines Corporation Structure and method for dual gate oxidation for CMOS technology
US6426254B2 (en) 1999-06-09 2002-07-30 Infineon Technologies Ag Method for expanding trenches by an anisotropic wet etch
US6320215B1 (en) * 1999-07-22 2001-11-20 International Business Machines Corporation Crystal-axis-aligned vertical side wall device
US6150670A (en) * 1999-11-30 2000-11-21 International Business Machines Corporation Process for fabricating a uniform gate oxide of a vertical transistor
US6362040B1 (en) * 2000-02-09 2002-03-26 Infineon Technologies Ag Reduction of orientation dependent oxidation for vertical sidewalls of semiconductor substrates
US6335247B1 (en) * 2000-06-19 2002-01-01 Infineon Technologies Ag Integrated circuit vertical trench device and method of forming thereof
WO2001099162A2 (en) * 2000-06-21 2001-12-27 Infineon Technologies North America Corp. Gate oxidation for vertical trench device
KR100450683B1 (en) * 2002-09-04 2004-10-01 삼성전자주식회사 SRAM device formed on SOI substrate
DE10255866B4 (en) * 2002-11-29 2006-11-23 Infineon Technologies Ag Methods and structures for increasing the pattern density and the storage capacity in a semiconductor wafer
JP4320167B2 (en) 2002-12-12 2009-08-26 忠弘 大見 Semiconductor device and method for manufacturing silicon oxynitride film
CN102779745B (en) * 2012-07-23 2016-07-06 上海华虹宏力半导体制造有限公司 The method controlling trench transistor gate dielectric layer thickness
KR102150969B1 (en) 2013-12-05 2020-10-26 삼성전자주식회사 Semiconductor device and method of manufacturing the same

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6156446A (en) * 1984-08-28 1986-03-22 Toshiba Corp Semiconductor device and manufacture thereof

Also Published As

Publication number Publication date
DE4217420A1 (en) 1992-12-03
JPH05109984A (en) 1993-04-30
ITMI921295A0 (en) 1992-05-26
IT1255293B (en) 1995-10-26
KR920022511A (en) 1992-12-19

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Legal Events

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0001 Granted