IT995940B - TYRISTOR - Google Patents
TYRISTORInfo
- Publication number
- IT995940B IT995940B IT3022373A IT3022373A IT995940B IT 995940 B IT995940 B IT 995940B IT 3022373 A IT3022373 A IT 3022373A IT 3022373 A IT3022373 A IT 3022373A IT 995940 B IT995940 B IT 995940B
- Authority
- IT
- Italy
- Prior art keywords
- tyristor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/749—Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
- H01L29/742—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a field effect transistor
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB4470373 | 1973-09-24 |
Publications (1)
Publication Number | Publication Date |
---|---|
IT995940B true IT995940B (en) | 1975-11-20 |
Family
ID=10434397
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT3022373A IT995940B (en) | 1973-09-24 | 1973-10-17 | TYRISTOR |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPS5061188A (en) |
BE (1) | BE807039A (en) |
IT (1) | IT995940B (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6112072A (en) * | 1984-06-27 | 1986-01-20 | Hitachi Ltd | Semiconductor device |
GB9525363D0 (en) * | 1995-12-12 | 1996-02-14 | Lynxvale Ltd | Semiconductor device |
JP4830195B2 (en) * | 2000-12-08 | 2011-12-07 | 富士電機株式会社 | Semiconductor device, application circuit using the same, and semiconductor integrated circuit device formed with the application circuit |
-
1973
- 1973-10-17 IT IT3022373A patent/IT995940B/en active
- 1973-11-07 BE BE137515A patent/BE807039A/en unknown
-
1974
- 1974-09-20 JP JP10945274A patent/JPS5061188A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
JPS5061188A (en) | 1975-05-26 |
BE807039A (en) | 1974-03-01 |
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