JPS5061188A - - Google Patents

Info

Publication number
JPS5061188A
JPS5061188A JP10945274A JP10945274A JPS5061188A JP S5061188 A JPS5061188 A JP S5061188A JP 10945274 A JP10945274 A JP 10945274A JP 10945274 A JP10945274 A JP 10945274A JP S5061188 A JPS5061188 A JP S5061188A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10945274A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5061188A publication Critical patent/JPS5061188A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/74Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/749Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/74Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
    • H01L29/742Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a field effect transistor
JP10945274A 1973-09-24 1974-09-20 Pending JPS5061188A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB4470373 1973-09-24

Publications (1)

Publication Number Publication Date
JPS5061188A true JPS5061188A (ja) 1975-05-26

Family

ID=10434397

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10945274A Pending JPS5061188A (ja) 1973-09-24 1974-09-20

Country Status (3)

Country Link
JP (1) JPS5061188A (ja)
BE (1) BE807039A (ja)
IT (1) IT995940B (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6112072A (ja) * 1984-06-27 1986-01-20 Hitachi Ltd 半導体装置
JP2002176168A (ja) * 2000-12-08 2002-06-21 Fuji Electric Co Ltd 半導体装置とそれを用いた適用回路およびその適用回路が形成された半導体集積回路装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9525363D0 (en) * 1995-12-12 1996-02-14 Lynxvale Ltd Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6112072A (ja) * 1984-06-27 1986-01-20 Hitachi Ltd 半導体装置
JPH0217940B2 (ja) * 1984-06-27 1990-04-24 Hitachi Ltd
JP2002176168A (ja) * 2000-12-08 2002-06-21 Fuji Electric Co Ltd 半導体装置とそれを用いた適用回路およびその適用回路が形成された半導体集積回路装置

Also Published As

Publication number Publication date
BE807039A (fr) 1974-03-01
IT995940B (it) 1975-11-20

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