IT980554B - Procedimento e dispositivo per la formazione di monocristalli - Google Patents

Procedimento e dispositivo per la formazione di monocristalli

Info

Publication number
IT980554B
IT980554B IT6768273A IT6768273A IT980554B IT 980554 B IT980554 B IT 980554B IT 6768273 A IT6768273 A IT 6768273A IT 6768273 A IT6768273 A IT 6768273A IT 980554 B IT980554 B IT 980554B
Authority
IT
Italy
Prior art keywords
monocrystals
procedure
formation
Prior art date
Application number
IT6768273A
Other languages
English (en)
Italian (it)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Application granted granted Critical
Publication of IT980554B publication Critical patent/IT980554B/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
IT6768273A 1972-03-15 1973-03-12 Procedimento e dispositivo per la formazione di monocristalli IT980554B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7209008A FR2175594B1 (zh) 1972-03-15 1972-03-15

Publications (1)

Publication Number Publication Date
IT980554B true IT980554B (it) 1974-10-10

Family

ID=9095236

Family Applications (1)

Application Number Title Priority Date Filing Date
IT6768273A IT980554B (it) 1972-03-15 1973-03-12 Procedimento e dispositivo per la formazione di monocristalli

Country Status (7)

Country Link
JP (1) JPS492782A (zh)
BE (1) BE796707A (zh)
DE (1) DE2311573A1 (zh)
FR (1) FR2175594B1 (zh)
GB (1) GB1415549A (zh)
IT (1) IT980554B (zh)
NL (1) NL7303316A (zh)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51145475A (en) * 1975-06-10 1976-12-14 Fujitsu Ltd A process for producing semiconductive crystal
JPS5583335A (en) * 1978-12-20 1980-06-23 Hitachi Ltd Digital-to-analog converter
CA1197755A (en) * 1980-05-22 1985-12-10 Robert A. Lancaster Controlled directional solidification of semiconductor alloys
FR2487863A1 (fr) * 1980-08-01 1982-02-05 Sklyarov Alexei Dispositif pour la croissance des monocristaux a partir d'alliages a constituants multiples
US4475582A (en) * 1982-01-27 1984-10-09 United Technologies Corporation Casting a metal single crystal article using a seed crystal and a helix
US4590043A (en) * 1982-12-27 1986-05-20 Sri International Apparatus for obtaining silicon from fluosilicic acid
FR2546912B1 (fr) * 1983-06-06 1987-07-10 Commissariat Energie Atomique Procede et dispositif d'elaboration d'un monocristal
JPS6033286A (ja) * 1983-07-28 1985-02-20 Natsuo Yugawa 単結晶製造用るつぼ
US5123996A (en) * 1991-01-28 1992-06-23 At&T Bell Laboratories Crystal growth method and apparatus
EP2589687A1 (en) 2011-11-04 2013-05-08 Vesuvius France (S.A.) Crucible and method for the production of a (near ) monocrystalline semiconductor ingot
EP2604728A1 (en) 2011-12-12 2013-06-19 Vesuvius France S.A. Crucible for the production of crystalline semiconductor ingots and process for manufacturing the same

Also Published As

Publication number Publication date
GB1415549A (en) 1975-11-26
NL7303316A (zh) 1973-09-18
JPS492782A (zh) 1974-01-11
FR2175594A1 (zh) 1973-10-26
FR2175594B1 (zh) 1974-09-13
DE2311573A1 (de) 1973-09-27
BE796707A (fr) 1973-09-13

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