IT971385B - Procedimento per fabbricare ogget ti cavi di materiale semicondutto re aperti almeno ad un estremita - Google Patents

Procedimento per fabbricare ogget ti cavi di materiale semicondutto re aperti almeno ad un estremita

Info

Publication number
IT971385B
IT971385B IT3230072A IT3230072A IT971385B IT 971385 B IT971385 B IT 971385B IT 3230072 A IT3230072 A IT 3230072A IT 3230072 A IT3230072 A IT 3230072A IT 971385 B IT971385 B IT 971385B
Authority
IT
Italy
Prior art keywords
semi
procedure
open
conductive material
manufacturing hollow
Prior art date
Application number
IT3230072A
Other languages
English (en)
Italian (it)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of IT971385B publication Critical patent/IT971385B/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
IT3230072A 1971-12-07 1972-11-30 Procedimento per fabbricare ogget ti cavi di materiale semicondutto re aperti almeno ad un estremita IT971385B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19712160713 DE2160713A1 (de) 1971-12-07 1971-12-07 Verfahren zum herstellen von mindestens einseitig offenen hohlkoerpern aus halbleitermaterial

Publications (1)

Publication Number Publication Date
IT971385B true IT971385B (it) 1974-04-30

Family

ID=5827295

Family Applications (1)

Application Number Title Priority Date Filing Date
IT3230072A IT971385B (it) 1971-12-07 1972-11-30 Procedimento per fabbricare ogget ti cavi di materiale semicondutto re aperti almeno ad un estremita

Country Status (6)

Country Link
JP (1) JPS4866070A (cg-RX-API-DMAC10.html)
DE (1) DE2160713A1 (cg-RX-API-DMAC10.html)
FR (1) FR2162443B1 (cg-RX-API-DMAC10.html)
GB (1) GB1370992A (cg-RX-API-DMAC10.html)
IT (1) IT971385B (cg-RX-API-DMAC10.html)
NL (1) NL7212470A (cg-RX-API-DMAC10.html)

Also Published As

Publication number Publication date
DE2160713A1 (de) 1973-06-14
FR2162443B1 (cg-RX-API-DMAC10.html) 1975-03-28
GB1370992A (en) 1974-10-23
JPS4866070A (cg-RX-API-DMAC10.html) 1973-09-11
NL7212470A (cg-RX-API-DMAC10.html) 1973-06-12
FR2162443A1 (cg-RX-API-DMAC10.html) 1973-07-20

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