IT964142B - Procedimento ed apparecchiatura per l accrescimento di strati epitassiali - Google Patents

Procedimento ed apparecchiatura per l accrescimento di strati epitassiali

Info

Publication number
IT964142B
IT964142B IT2836572A IT2836572A IT964142B IT 964142 B IT964142 B IT 964142B IT 2836572 A IT2836572 A IT 2836572A IT 2836572 A IT2836572 A IT 2836572A IT 964142 B IT964142 B IT 964142B
Authority
IT
Italy
Prior art keywords
growth
procedure
equipment
epitaxial layers
epitaxial
Prior art date
Application number
IT2836572A
Other languages
English (en)
Italian (it)
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of IT964142B publication Critical patent/IT964142B/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/063—Sliding boat system
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/066—Injection or centrifugal force system
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/10—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/10—Controlling or regulating
    • C30B19/106—Controlling or regulating adding crystallising material or reactants forming it in situ to the liquid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
IT2836572A 1971-08-30 1972-08-22 Procedimento ed apparecchiatura per l accrescimento di strati epitassiali IT964142B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US17585671A 1971-08-30 1971-08-30

Publications (1)

Publication Number Publication Date
IT964142B true IT964142B (it) 1974-01-21

Family

ID=22641941

Family Applications (1)

Application Number Title Priority Date Filing Date
IT2836572A IT964142B (it) 1971-08-30 1972-08-22 Procedimento ed apparecchiatura per l accrescimento di strati epitassiali

Country Status (4)

Country Link
JP (1) JPS4832779A (enrdf_load_stackoverflow)
DE (1) DE2242138A1 (enrdf_load_stackoverflow)
FR (1) FR2150756A1 (enrdf_load_stackoverflow)
IT (1) IT964142B (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5440567A (en) * 1977-09-06 1979-03-30 Matsushita Electric Ind Co Ltd Crystal growth device
DE3429440A1 (de) * 1984-08-10 1986-02-20 Hoechst Ag, 6230 Frankfurt Polyvinylbutyral mit reduzierter klebrigkeit und verbesserter reissfestigkeit

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1363006A (en) * 1971-09-21 1974-08-14 Morgan Refractories Ltd Cermet articles

Also Published As

Publication number Publication date
DE2242138A1 (de) 1973-03-08
FR2150756B1 (enrdf_load_stackoverflow) 1975-09-12
FR2150756A1 (en) 1973-04-13
JPS4832779A (enrdf_load_stackoverflow) 1973-05-02

Similar Documents

Publication Publication Date Title
IT982456B (it) Procedimento per la fabbricazione di dispositivi semiconduttori e di spositivo ottenuto con il procedi mento
IT1037445B (it) Metodo per l accrescimento di strati epitassiali di silicio
IT956231B (it) Procedimento e dispositivo per la produzione di polveri metalliche
IT950013B (it) Procedimento per la preparazione di poliolefine
IT973685B (it) Procedimento ed apparecchio per la interruzione di operazioni di formazione di filati
IT963495B (it) Apparecchiatura per lo stampaggio di strati sottili
IT950816B (it) Procedimento e impianto per la fabbricazione di disolfuri organici
IT974780B (it) Additivi per cemento espansivo e procedimento per la fabbricazione dei medesimi
IT949664B (it) Apparecchio per la preparazione e distribuzione di bevand
IT955196B (it) Procedimento e apparecchiatura per la realizzazione di nitrazioni
IT991882B (it) Procedimento e dispositivo per la produzione di semiconduttori com prendenti piu strati epitassiali
IT966093B (it) Procedimento e dispositivo per l applicazione di rivestimenti di materiale metallico
IT962924B (it) Procedimento e apparecchiatura per il trattamento di strati elettrofo tografici
IT980554B (it) Procedimento e dispositivo per la formazione di monocristalli
IT961190B (it) Procedimento per la galvanizzazione di materie sintetiche
IT965861B (it) Procedimento e composizione per inibire la crescita di gemme
IT961841B (it) Procedimento per la produzione di alchilfenati e alchilfenati solforati neutri e fortemente basici
IT972869B (it) Procedimento per la preparazione di perfluoroalchilioduri
IT964142B (it) Procedimento ed apparecchiatura per l accrescimento di strati epitassiali
IT967077B (it) Procedimento ed apparecchiatura per il trattamento di articoli di calzetteria
IT953825B (it) Procedimento ed apparecchiatura di formatura
IT964021B (it) Procedimento ed impianto per la produzione di lingotti metallici
IT948124B (it) Composizione ceramica piezoelettri ca e procedimento per prepararla
IT960605B (it) Procedimento per la preparazione di glicidileteri
IT958510B (it) Procedimento per la produzione simultanea di dibromostiroli ed alchilbromuri e prodotti ottenuti