IT962432B - Dispositivo per riscaldare elettri camente una bacchetta di materiale semiconduttore che si ispessisce contemporaneamente in conseguen za di un processo di deposizione dalla fase gassosa - Google Patents

Dispositivo per riscaldare elettri camente una bacchetta di materiale semiconduttore che si ispessisce contemporaneamente in conseguen za di un processo di deposizione dalla fase gassosa

Info

Publication number
IT962432B
IT962432B IT26617/72A IT2661772A IT962432B IT 962432 B IT962432 B IT 962432B IT 26617/72 A IT26617/72 A IT 26617/72A IT 2661772 A IT2661772 A IT 2661772A IT 962432 B IT962432 B IT 962432B
Authority
IT
Italy
Prior art keywords
wand
result
semiconductor material
deposition process
gaseous phase
Prior art date
Application number
IT26617/72A
Other languages
English (en)
Italian (it)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19712133863 external-priority patent/DE2133863C3/de
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of IT962432B publication Critical patent/IT962432B/it

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/12—Regulating voltage or current wherein the variable actually regulated by the final control device is ac
    • G05F1/40—Regulating voltage or current wherein the variable actually regulated by the final control device is ac using discharge tubes or semiconductor devices as final control devices
    • G05F1/44—Regulating voltage or current wherein the variable actually regulated by the final control device is ac using discharge tubes or semiconductor devices as final control devices semiconductor devices only
    • G05F1/445—Regulating voltage or current wherein the variable actually regulated by the final control device is ac using discharge tubes or semiconductor devices as final control devices semiconductor devices only being transistors in series with the load
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/12—Regulating voltage or current wherein the variable actually regulated by the final control device is ac
    • G05F1/40—Regulating voltage or current wherein the variable actually regulated by the final control device is ac using discharge tubes or semiconductor devices as final control devices
    • G05F1/44—Regulating voltage or current wherein the variable actually regulated by the final control device is ac using discharge tubes or semiconductor devices as final control devices semiconductor devices only
    • G05F1/45—Regulating voltage or current wherein the variable actually regulated by the final control device is ac using discharge tubes or semiconductor devices as final control devices semiconductor devices only being controlled rectifiers in series with the load
    • G05F1/455—Regulating voltage or current wherein the variable actually regulated by the final control device is ac using discharge tubes or semiconductor devices as final control devices semiconductor devices only being controlled rectifiers in series with the load with phase control
IT26617/72A 1971-07-07 1972-07-05 Dispositivo per riscaldare elettri camente una bacchetta di materiale semiconduttore che si ispessisce contemporaneamente in conseguen za di un processo di deposizione dalla fase gassosa IT962432B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19712133863 DE2133863C3 (de) 1971-07-07 Vorrichtung zum Abscheiden von Halbleitermaterial aus der Gasphase an der Oberfläche eines erhitzten Halbleiterstabes

Publications (1)

Publication Number Publication Date
IT962432B true IT962432B (it) 1973-12-20

Family

ID=5812968

Family Applications (1)

Application Number Title Priority Date Filing Date
IT26617/72A IT962432B (it) 1971-07-07 1972-07-05 Dispositivo per riscaldare elettri camente una bacchetta di materiale semiconduttore che si ispessisce contemporaneamente in conseguen za di un processo di deposizione dalla fase gassosa

Country Status (6)

Country Link
US (1) US3832626A (de)
BE (1) BE786005A (de)
FR (1) FR2147958B1 (de)
GB (1) GB1400762A (de)
IT (1) IT962432B (de)
NL (1) NL7207136A (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1465191A (en) * 1974-03-29 1977-02-23 Nat Res Dev Automatically controlled crystal growth
DE2753567C3 (de) * 1977-12-01 1982-04-15 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur Herstellung von hochreinen Halbleitermaterialien und Reinstmetallen
KR100201808B1 (ko) * 1995-12-28 1999-06-15 윤종용 무선송신기의 고조파 억압용 저역통과 필터
US5844791A (en) * 1997-06-30 1998-12-01 Mte Corporation Single-phase harmonic filter system
US6768227B1 (en) * 2003-01-22 2004-07-27 Prodigit Electronics Co., Ltd. Digital controlled power regulation device
US20090250440A1 (en) * 2008-04-04 2009-10-08 Yap Tze-Yee Ryan Out-of-phase electrical welder and process
US8666504B2 (en) * 2011-10-24 2014-03-04 Boston Scientific Neuromodulation Corporation Communication and charging circuitry for a single-coil implantable medical device
CN112925373B (zh) * 2021-01-27 2022-11-08 南京丹迪克电力仪表有限公司 多量程恒流源电路、多量程恒流源及控制方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1833867A (en) * 1926-05-17 1931-11-24 Dubilier Condenser Corp Filter system
US2015534A (en) * 1933-05-27 1935-09-24 Westinghouse Electric & Mfg Co Filter system for mercury-arc rectifiers
US2792317A (en) * 1954-01-28 1957-05-14 Westinghouse Electric Corp Method of producing multiple p-n junctions
US3319152A (en) * 1963-12-19 1967-05-09 Honeywell Inc Scr switching circuit
US3372328A (en) * 1964-11-24 1968-03-05 Honeywell Inc Scr temperature control circuit
US3447902A (en) * 1966-04-04 1969-06-03 Motorola Inc Single crystal silicon rods
US3532900A (en) * 1966-08-31 1970-10-06 Sola Basic Ind Inc Dc squelch circuit
US3538427A (en) * 1968-05-13 1970-11-03 Microdyne Inc Alternating current constant rms voltage regulator
US3700412A (en) * 1968-12-06 1972-10-24 Kokusai Electric Co Ltd Crystal pulling apparatus having means for maintaining liquid solid crystal interface at a constant temperature
GB1323441A (en) * 1969-06-20 1973-07-18 Matsushita Electric Ind Co Ltd Converter for changing alternating current into direct current
JPS5528200B1 (de) * 1970-09-02 1980-07-25

Also Published As

Publication number Publication date
GB1400762A (en) 1975-07-23
FR2147958B1 (de) 1975-08-29
BE786005A (fr) 1972-11-03
NL7207136A (de) 1973-01-09
FR2147958A1 (de) 1973-03-11
US3832626A (en) 1974-08-27

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