IT956672B - Dispositivo semiconduttore elettroluminescente - Google Patents

Dispositivo semiconduttore elettroluminescente

Info

Publication number
IT956672B
IT956672B IT25838/72A IT2583872A IT956672B IT 956672 B IT956672 B IT 956672B IT 25838/72 A IT25838/72 A IT 25838/72A IT 2583872 A IT2583872 A IT 2583872A IT 956672 B IT956672 B IT 956672B
Authority
IT
Italy
Prior art keywords
electroluminescent device
semiconductor electroluminescent
semiconductor
electroluminescent
Prior art date
Application number
IT25838/72A
Other languages
English (en)
Italian (it)
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Application granted granted Critical
Publication of IT956672B publication Critical patent/IT956672B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/065—Gp III-V generic compounds-processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/113—Nitrides of boron or aluminum or gallium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS
IT25838/72A 1971-07-22 1972-06-17 Dispositivo semiconduttore elettroluminescente IT956672B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US16509771A 1971-07-22 1971-07-22

Publications (1)

Publication Number Publication Date
IT956672B true IT956672B (it) 1973-10-10

Family

ID=22597409

Family Applications (1)

Application Number Title Priority Date Filing Date
IT25838/72A IT956672B (it) 1971-07-22 1972-06-17 Dispositivo semiconduttore elettroluminescente

Country Status (9)

Country Link
US (1) US3683240A (OSRAM)
JP (1) JPS5116320B1 (OSRAM)
AU (1) AU461505B2 (OSRAM)
CA (1) CA963969A (OSRAM)
DE (1) DE2234590A1 (OSRAM)
FR (1) FR2146407B1 (OSRAM)
GB (1) GB1397643A (OSRAM)
IT (1) IT956672B (OSRAM)
NL (1) NL7210121A (OSRAM)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3852796A (en) * 1972-06-08 1974-12-03 Ibm GaN SWITCHING AND MEMORY DEVICES AND METHODS THEREFOR
US3740622A (en) * 1972-07-10 1973-06-19 Rca Corp Electroluminescent semiconductor device for generating ultra violet radiation
US3783353A (en) * 1972-10-27 1974-01-01 Rca Corp Electroluminescent semiconductor device capable of emitting light of three different wavelengths
US3849707A (en) * 1973-03-07 1974-11-19 Ibm PLANAR GaN ELECTROLUMINESCENT DEVICE
US3865655A (en) * 1973-09-24 1975-02-11 Rca Corp Method for diffusing impurities into nitride semiconductor crystals
US3869322A (en) * 1973-10-15 1975-03-04 Ibm Automatic P-N junction formation during growth of a heterojunction
US3922703A (en) * 1974-04-03 1975-11-25 Rca Corp Electroluminescent semiconductor device
US4092561A (en) * 1975-09-22 1978-05-30 Rca Corporation Stripe contact providing a uniform current density
DE2738329A1 (de) * 1976-09-06 1978-03-09 Philips Nv Elektrolumineszierende galliumnitridhalbleiteranordnung und verfahren zu deren herstellung
US4139858A (en) * 1977-12-12 1979-02-13 Rca Corporation Solar cell with a gallium nitride electrode
JPS6055996B2 (ja) * 1979-12-05 1985-12-07 松下電器産業株式会社 電場発光半導体装置
FR2514566A1 (fr) * 1982-02-02 1983-04-15 Bagratishvili Givi Dispositif emetteur de lumiere semi-conducteur a base de nitrure de gallium et procede de fabrication dudit dispositif
DE3852402T2 (de) * 1987-01-31 1995-05-04 Toyoda Gosei Kk Galliumnitridartige Halbleiterverbindung und daraus bestehende lichtemittierende Vorrichtung sowie Verfahren zu deren Herstellung.
US5218216A (en) * 1987-01-31 1993-06-08 Toyoda Gosei Co., Ltd. Gallium nitride group semiconductor and light emitting diode comprising it and the process of producing the same
JPS6439082A (en) * 1987-08-05 1989-02-09 Sharp Kk Blue-light emitting display element
US4862471A (en) * 1988-04-22 1989-08-29 University Of Colorado Foundation, Inc. Semiconductor light emitting device
US5290393A (en) * 1991-01-31 1994-03-01 Nichia Kagaku Kogyo K.K. Crystal growth method for gallium nitride-based compound semiconductor
US6953703B2 (en) * 1991-03-18 2005-10-11 The Trustees Of Boston University Method of making a semiconductor device with exposure of sapphire substrate to activated nitrogen
WO1992016966A1 (en) * 1991-03-18 1992-10-01 Boston University A method for the preparation and doping of highly insulating monocrystalline gallium nitride thin films
US5633192A (en) * 1991-03-18 1997-05-27 Boston University Method for epitaxially growing gallium nitride layers
GB2277405A (en) * 1993-04-22 1994-10-26 Sharp Kk Semiconductor colour display or detector array
US5661313A (en) * 1993-09-09 1997-08-26 The United States Of America As Represented By The Secretary Of The Navy Electroluminescent device in silicon on sapphire
JPH10233382A (ja) * 1997-02-17 1998-09-02 Hewlett Packard Co <Hp> 半導体の表面清浄方法
US6472300B2 (en) 1997-11-18 2002-10-29 Technologies And Devices International, Inc. Method for growing p-n homojunction-based structures utilizing HVPE techniques
US6849862B2 (en) * 1997-11-18 2005-02-01 Technologies And Devices International, Inc. III-V compound semiconductor device with an AlxByInzGa1-x-y-zN1-a-bPaAsb non-continuous quantum dot layer
US6559467B2 (en) 1997-11-18 2003-05-06 Technologies And Devices International, Inc. P-n heterojunction-based structures utilizing HVPE grown III-V compound layers
US6555452B2 (en) 1997-11-18 2003-04-29 Technologies And Devices International, Inc. Method for growing p-type III-V compound material utilizing HVPE techniques
US6559038B2 (en) 1997-11-18 2003-05-06 Technologies And Devices International, Inc. Method for growing p-n heterojunction-based structures utilizing HVPE techniques
US6476420B2 (en) 1997-11-18 2002-11-05 Technologies And Devices International, Inc. P-N homojunction-based structures utilizing HVPE growth III-V compound layers
US20020047135A1 (en) * 1997-11-18 2002-04-25 Nikolaev Audrey E. P-N junction-based structures utilizing HVPE grown III-V compound layers
US6218269B1 (en) 1997-11-18 2001-04-17 Technology And Devices International, Inc. Process for producing III-V nitride pn junctions and p-i-n junctions
US6479839B2 (en) 1997-11-18 2002-11-12 Technologies & Devices International, Inc. III-V compounds semiconductor device with an AlxByInzGa1-x-y-zN non continuous quantum dot layer
US6890809B2 (en) * 1997-11-18 2005-05-10 Technologies And Deviles International, Inc. Method for fabricating a P-N heterojunction device utilizing HVPE grown III-V compound layers and resultant device
US6599133B2 (en) 1997-11-18 2003-07-29 Technologies And Devices International, Inc. Method for growing III-V compound semiconductor structures with an integral non-continuous quantum dot layer utilizing HVPE techniques
US7198970B2 (en) * 2004-01-23 2007-04-03 The United States Of America As Represented By The Secretary Of The Navy Technique for perfecting the active regions of wide bandgap semiconductor nitride devices

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3560275A (en) * 1968-11-08 1971-02-02 Rca Corp Fabricating semiconductor devices

Also Published As

Publication number Publication date
GB1397643A (en) 1975-06-11
DE2234590A1 (de) 1973-02-01
AU461505B2 (en) 1975-05-29
JPS5116320B1 (OSRAM) 1976-05-22
US3683240A (en) 1972-08-08
AU4428372A (en) 1974-01-10
FR2146407A1 (OSRAM) 1973-03-02
NL7210121A (OSRAM) 1973-01-24
CA963969A (en) 1975-03-04
FR2146407B1 (OSRAM) 1976-10-29

Similar Documents

Publication Publication Date Title
IT947946B (it) Dispositivo semiconduttore elettroluminescente
IT956672B (it) Dispositivo semiconduttore elettroluminescente
AT361042B (de) Integrierte halbleiterschaltung
BR7203444D0 (pt) Dispositivo portador
IT951418B (it) Dispositivo di trasporto
CH555126A (de) Elektrolumineszierende halbleitervorrichtung.
IT947244B (it) Dispositivo semiconduttore
BE782635A (fr) Dispositif semi-conducteur
SE384922B (sv) Vetejonkenslig metanordning
IT975353B (it) Dispositivo semiconduttore
BE791487A (fr) Dispositif semiconducteur
IT959277B (it) Dispositivo semiconduttore
CH533363A (de) Halbleiteranordnung
SE383389B (sv) Flektanordning
TR17651A (tr) Hararet muebadele cihazi
IT969519B (it) Dispositivo semiconduttore elettro luminescente
IT952873B (it) Dispositivo semiconduttore
IT968868B (it) Dispoitivo semiconduttore
CH528823A (de) Halbleiteranordnung
IT949161B (it) Dispositivo semiconduttore
CH517379A (de) Halbleitervorrichtung
SE408354B (sv) Styrbar halvledarlikriktare
CH530715A (de) Halbleiteranordnung
AT314589B (de) Brückenlegegerät
CH539953A (de) Halbleiterbauelement