IT948212B - Dispositivo di resistenza elettrica e procedimento per produrlo - Google Patents

Dispositivo di resistenza elettrica e procedimento per produrlo

Info

Publication number
IT948212B
IT948212B IT47724/72A IT4772472A IT948212B IT 948212 B IT948212 B IT 948212B IT 47724/72 A IT47724/72 A IT 47724/72A IT 4772472 A IT4772472 A IT 4772472A IT 948212 B IT948212 B IT 948212B
Authority
IT
Italy
Prior art keywords
procedure
producing
electrical resistance
resistance device
electrical
Prior art date
Application number
IT47724/72A
Other languages
English (en)
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Application granted granted Critical
Publication of IT948212B publication Critical patent/IT948212B/it

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C7/00Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
    • H01C7/041Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient formed as one or more layers or coatings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C17/00Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/075Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/15Silicon on sapphire SOS
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/24Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24851Intermediate layer is discontinuous or differential
    • Y10T428/24868Translucent outer layer
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/24Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24893Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including particulate material
    • Y10T428/24909Free metal or mineral containing
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/24Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24917Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/24Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24926Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including ceramic, glass, porcelain or quartz layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Physical Vapour Deposition (AREA)
IT47724/72A 1971-02-02 1972-01-14 Dispositivo di resistenza elettrica e procedimento per produrlo IT948212B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11189771A 1971-02-02 1971-02-02

Publications (1)

Publication Number Publication Date
IT948212B true IT948212B (it) 1973-05-30

Family

ID=22341025

Family Applications (1)

Application Number Title Priority Date Filing Date
IT47724/72A IT948212B (it) 1971-02-02 1972-01-14 Dispositivo di resistenza elettrica e procedimento per produrlo

Country Status (6)

Country Link
US (1) US4088799A (it)
JP (1) JPS5136877B1 (it)
FR (1) FR2124361B1 (it)
GB (1) GB1346517A (it)
IL (1) IL38468A (it)
IT (1) IT948212B (it)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4188417A (en) * 1977-05-04 1980-02-12 Balzers Patent-und Beteiligungs-Aktiegesellschaft Method of applying a dielectric layer to a substrate and a mask-forming coating for the application of a dielectric layer
US4173660A (en) * 1977-07-27 1979-11-06 The United States Of America As Represented By The United States Department Of Energy Method of preparing a thermoluminescent phosphor
US4196228A (en) * 1978-06-10 1980-04-01 Monolithic Memories, Inc. Fabrication of high resistivity semiconductor resistors by ion implanatation
JPS5839376B2 (ja) * 1978-10-30 1983-08-30 富士通株式会社 イオン注入法
US4286250A (en) 1979-05-04 1981-08-25 New England Instrument Company Laser formed resistor elements
DE3041957A1 (de) * 1979-11-08 1981-09-03 British Aerospace, Weybridge, Surrey Thermische abschirmung, insbesondere fuer raumfahrzeuge
US4532149A (en) * 1981-10-21 1985-07-30 The United States Of America As Represented By The United States Department Of Energy Method for producing hard-surfaced tools and machine components
GB8310298D0 (en) * 1983-04-15 1983-05-18 Atomic Energy Authority Uk Modification of surface properties of ceramics
US4489104A (en) * 1983-06-03 1984-12-18 Industrial Technology Research Institute Polycrystalline silicon resistor having limited lateral diffusion
US4560583A (en) * 1984-06-29 1985-12-24 International Business Machines Corporation Resistor design system
US4800170A (en) * 1987-10-02 1989-01-24 General Motors Corporation Process for forming in a silicon oxide layer a portion with vertical side walls
US5132248A (en) * 1988-05-31 1992-07-21 The United States Of America As Represented By The United States Department Of Energy Direct write with microelectronic circuit fabrication
US4915746A (en) * 1988-08-15 1990-04-10 Welsch Gerhard E Method of forming high temperature barriers in structural metals to make such metals creep resistant at high homologous temperatures
JP2764591B2 (ja) * 1988-12-16 1998-06-11 株式会社小松製作所 薄膜el素子とその製造方法
JP2934456B2 (ja) * 1989-07-14 1999-08-16 株式会社日立製作所 表面処理方法及びその装置
US5164266A (en) * 1989-10-24 1992-11-17 Isuzu Ceramics Research Institute Co., Ltd. Slidable ceramic member and method of manufacturing same
US5183795A (en) * 1989-12-13 1993-02-02 Intel Corporation Fully planar metalization process
US5060110A (en) * 1990-08-29 1991-10-22 Motorola, Inc. High frequency MOSCAP
FR2695117B1 (fr) * 1992-08-28 1994-12-02 Saint Gobain Vitrage Int Procédé de traitement de couches minces à propriétés de conduction électrique et/ou de réflexion dans l'infra-rouge.
US5437729A (en) * 1993-04-08 1995-08-01 Martin Marietta Energy Systems, Inc. Controlled removal of ceramic surfaces with combination of ions implantation and ultrasonic energy
US6484585B1 (en) 1995-02-28 2002-11-26 Rosemount Inc. Pressure sensor for a pressure transmitter
US5637802A (en) * 1995-02-28 1997-06-10 Rosemount Inc. Capacitive pressure sensor for a pressure transmitted where electric field emanates substantially from back sides of plates
US5665899A (en) * 1996-02-23 1997-09-09 Rosemount Inc. Pressure sensor diagnostics in a process transmitter
US6017829A (en) * 1997-04-01 2000-01-25 Micron Technology, Inc. Implanted conductor and methods of making
US5808205A (en) * 1997-04-01 1998-09-15 Rosemount Inc. Eccentric capacitive pressure sensor
US6451674B1 (en) * 1998-02-18 2002-09-17 Matsushita Electronics Corporation Method for introducing impurity into a semiconductor substrate without negative charge buildup phenomenon
US6403454B1 (en) * 1999-10-29 2002-06-11 Agere Systems Guardian Corp. Silicon semiconductor devices with δ-doped layers
CN1151367C (zh) 2000-01-06 2004-05-26 罗斯蒙德公司 微机电系统(mems)用的电互联的晶粒生长
US6505516B1 (en) 2000-01-06 2003-01-14 Rosemount Inc. Capacitive pressure sensing with moving dielectric
US6520020B1 (en) 2000-01-06 2003-02-18 Rosemount Inc. Method and apparatus for a direct bonded isolated pressure sensor
US6561038B2 (en) 2000-01-06 2003-05-13 Rosemount Inc. Sensor with fluid isolation barrier
US6508129B1 (en) 2000-01-06 2003-01-21 Rosemount Inc. Pressure sensor capsule with improved isolation
IL143442A0 (en) * 2001-05-30 2002-04-21 Target Technology Ct Ceramic heat-generating element and method for manufacturing thereof
US6848316B2 (en) * 2002-05-08 2005-02-01 Rosemount Inc. Pressure sensor assembly
US6944008B2 (en) * 2002-12-18 2005-09-13 Lucent Technologies Inc. Charge dissipation in electrostatically driven devices
US20070184194A1 (en) * 2006-02-08 2007-08-09 Varian Semiconductor Equipment Associates Technique for depositing metallic films using ion implantation surface modification for catalysis of electroless deposition
KR102281607B1 (ko) * 2012-11-14 2021-07-26 지티에이티 코포레이션 초슬림 사파이어 덮개판을 포함하는 휴대용 전자장치
US9377912B2 (en) * 2012-12-11 2016-06-28 Gtat Corporation Mobile electronic device comprising a modified sapphire
US9407746B2 (en) * 2012-12-27 2016-08-02 Gtat Corporation Mobile electronic device comprising a sapphire cover plate having a low level of inclusions
US9092187B2 (en) 2013-01-08 2015-07-28 Apple Inc. Ion implant indicia for cover glass or display component
US9623628B2 (en) 2013-01-10 2017-04-18 Apple Inc. Sapphire component with residual compressive stress
EP2789004A1 (en) 2013-02-12 2014-10-15 Apple Inc. Multi-step ion implantation
US9416442B2 (en) 2013-03-02 2016-08-16 Apple Inc. Sapphire property modification through ion implantation
US10280504B2 (en) 2015-09-25 2019-05-07 Apple Inc. Ion-implanted, anti-reflective layer formed within sapphire material

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2950996A (en) * 1957-12-05 1960-08-30 Beckman Instruments Inc Electrical resistance material and method of making same
US3390012A (en) * 1964-05-14 1968-06-25 Texas Instruments Inc Method of making dielectric bodies having conducting portions
US3481776A (en) * 1966-07-18 1969-12-02 Sprague Electric Co Ion implantation to form conductive contact
US3562022A (en) * 1967-12-26 1971-02-09 Hughes Aircraft Co Method of doping semiconductor bodies by indirection implantation
US3523042A (en) * 1967-12-26 1970-08-04 Hughes Aircraft Co Method of making bipolar transistor devices
US3600797A (en) * 1967-12-26 1971-08-24 Hughes Aircraft Co Method of making ohmic contacts to semiconductor bodies by indirect ion implantation
US3718502A (en) * 1969-10-15 1973-02-27 J Gibbons Enhancement of diffusion of atoms into a heated substrate by bombardment

Also Published As

Publication number Publication date
FR2124361B1 (it) 1976-01-16
IL38468A (en) 1974-11-29
DE2202585A1 (de) 1972-08-10
IL38468A0 (en) 1972-02-29
GB1346517A (en) 1974-02-13
DE2202585B2 (de) 1976-12-30
US4088799A (en) 1978-05-09
FR2124361A1 (it) 1972-09-22
JPS5136877B1 (it) 1976-10-12

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