IT940698B - Cella di memoria monolitica per fezionata - Google Patents
Cella di memoria monolitica per fezionataInfo
- Publication number
- IT940698B IT940698B IT31314/71A IT3131471A IT940698B IT 940698 B IT940698 B IT 940698B IT 31314/71 A IT31314/71 A IT 31314/71A IT 3131471 A IT3131471 A IT 3131471A IT 940698 B IT940698 B IT 940698B
- Authority
- IT
- Italy
- Prior art keywords
- feeding
- memory cell
- monolithic memory
- monolithic
- cell
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/4067—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the bipolar type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
- H10B99/10—Memory cells having a cross-point geometry
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US9296170A | 1970-11-27 | 1970-11-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IT940698B true IT940698B (it) | 1973-02-20 |
Family
ID=22235982
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT31314/71A IT940698B (it) | 1970-11-27 | 1971-11-19 | Cella di memoria monolitica per fezionata |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS5324763B1 (it) |
| BE (1) | BE773703A (it) |
| IT (1) | IT940698B (it) |
| SE (1) | SE383428B (it) |
-
1971
- 1971-10-06 JP JP7795771A patent/JPS5324763B1/ja active Pending
- 1971-10-08 BE BE773703A patent/BE773703A/fr not_active IP Right Cessation
- 1971-11-19 IT IT31314/71A patent/IT940698B/it active
- 1971-11-24 SE SE7115024A patent/SE383428B/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| BE773703A (fr) | 1972-01-31 |
| SE383428B (sv) | 1976-03-08 |
| JPS5324763B1 (it) | 1978-07-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS53149732A (en) | Gedmetric memory cell | |
| CA946511A (en) | Nonvolatile flip-flop memory cells | |
| IT1007513B (it) | Memoria monolitica utilizzante celle di memoria difettose | |
| IT1006903B (it) | Dispositivo di memorizzazione per fezionato | |
| CA926008A (en) | Simultaneous read-write monolithic memory array | |
| CA954218A (en) | Monolithic memory utilizing defective storage cells | |
| CH531794A (de) | Brennstoffzellenanlage | |
| BE769140R (fr) | Cellule | |
| IT1022436B (it) | Cella di memoria perfezionata | |
| CA948328A (en) | Bipolar capacitive memory cell | |
| IT1001109B (it) | Cella di memorizzazione realizzata con dispositivi semiconduttori | |
| CA963576A (en) | Nonvolatile memory cells | |
| CA932460A (en) | Monolithic associative memory cell | |
| CH531795A (de) | Brennstoffzellenanlage | |
| NL170070B (nl) | Brandstofcel. | |
| NL171311B (nl) | Compact brandstofcellenstelsel. | |
| CA934876A (en) | Distributed logic memory cell for parallel cellular-logic processor | |
| CH543649A (fr) | Structure cellulaire | |
| CH527432A (de) | Helogrammspeicher | |
| IT1025194B (it) | Cella di memoria perfezionata | |
| IT944811B (it) | Procedimento per la fabbricazione di combustibile nuclear | |
| GB1343706A (en) | Primary cells | |
| IT940698B (it) | Cella di memoria monolitica per fezionata | |
| GB1347688A (en) | Semiconductor memory arrays | |
| IT948248B (it) | Cassa per cella primaria elettro litica |